Conferences related to Interface phenomena

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2020 42nd Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE Global Engineering Education Conference (EDUCON)

The IEEE Global Engineering Education Conference (EDUCON) 2020 is the eleventh in a series of conferences that rotate among central locations in IEEE Region 8 (Europe, Middle East and North Africa). EDUCON is one of the flagship conferences of the IEEE Education Society. It seeks to foster the area of Engineering Education under the leadership of the IEEE Education Society.


2020 IEEE Haptics Symposium (HAPTICS)

Held since 1992, the IEEE Haptics Symposium (HAPTICS) is a vibrant interdisciplinary forum where psychophysicists, engineers, and designers come together to share advances, spark new collaborations, and envision a future that benefits from rich physical interactions between humans and computers, generated through haptic (force and tactile) devices.

  • 2018 IEEE Haptics Symposium (HAPTICS)

    Held since 1992, the IEEE Haptics Symposium (HAPTICS) is a vibrant interdisciplinary forum where psychophysicists, engineers, and designers come together to share advances, spark new collaborations, and envision a future that benefits from rich physical interactions between humans and computers, generated through haptic (force and tactile) devices.

  • 2016 IEEE Haptics Symposium (HAPTICS)

    Held since 1992, the IEEE Haptics Symposium (HAPTICS) is a vibrant interdisciplinary forum where psychophysicists, engineers, and designers come together to share advances, spark new collaborations, and envision a future that benefits from rich physical interactions between humans and computers, generated through haptic (force and tactile) devices. In 2016, this conference will be held in central Philadelphia, one of the most historic and beautiful cities in North America. HAPTICS 2016 will be a four-day conference with a full day of tutorials and workshops and three days of conference activities including technical paper presentations and hands-on demonstrations.Features:ExhibitsWorkshops and TutorialsHands-on Demonstrations

  • 2014 IEEE Haptics Symposium (HAPTICS)

    This conference brings together researchers in diverse engineering and human science disciplines who are interested in the design, analysis, and evaluation of systems that display haptic (force and touch) information to human operators, and the study of the human systems involved in haptic interacti

  • 2012 IEEE Haptics Symposium (HAPTICS)

    This conference brings together researchers in diverse engineering and human science disciplines who are interested in the design, analysis, and evaluation of systems that display haptic (force and touch) information to human operators, and the study of the human systems involved in haptic interaction.

  • 2010 IEEE Haptics Symposium (Formerly known as Symposium on Haptic Interfaces for Virtual Environment and Teleoperator Systems)

    The Haptics Symposium is a bi-annual, single-track conference that brings together researchers who are advancing the human science, technology and design processes underlying haptic (force and tactile) interaction systems. Our community spans the disciplines of biomechanics, psychology, neurophysiology, engineering, human-computer interaction and computer science.

  • 2008 16th Symposium on Haptic Interfaces for Virtual Environment and Teleoperator Systems (Haptics 2008)

    The Haptics Symposium is an annual, single-track conference that brings together researchers in diverse engineering and human science disciplines who are interested in the design, analysis, and evaluation of systems that display haptic (force and touch) information to human operators.

  • 2006 14th Symposium on Haptic Interfaces for Virtual Environment and Teleoperator Systems


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


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Periodicals related to Interface phenomena

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Antennas and Wireless Propagation Letters, IEEE

IEEE Antennas and Wireless Propagation Letters (AWP Letters) will be devoted to the rapid electronic publication of short manuscripts in the technical areas of Antennas and Wireless Propagation.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


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Most published Xplore authors for Interface phenomena

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Xplore Articles related to Interface phenomena

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P-type anode structure for GaAs TEDs on semi-insulating substrate

IEEE Electron Device Letters, 1980

The use of a p-type anode in a planar GaAs Gunn device was studied for the first time. The undesirable decrease of current for dc bias, compared with pulsed bias, is eliminated by hole injection to the overcritically doped n-layer from a p-n junction anode. These devices have exhibited satisfactory Gunn domain operation for triggered dc operation.


New Scheme Of Finite Element Analysis Of A Interface Phenomena Of VCR With Drum, Head And Tape

IEEE 1992 International Conference on Consumer Electronics Digest of Technical Papers, 1992

None


Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO/sub 2/ gate dielectrics

Electronics Letters, 1989

The radiation-induced interface state generation Delta D/sub it/ in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO/sub 2/. The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the ...


Exact resolution of coupled Schrodinger-Poisson equation: application to accurate determination of potential profile in HEMTs

Electronics Letters, 1991

An exact solution of a combination of the nonlinear Schrodinger and Poisson equations is presented for the study of potential energy and carrier distributions at the interface of a single heterojunction. The shapes of the wave function and the potential (i.e. conduction band bending) are not required to be known a priori and are calculated from the doping rates and ...


Dependence of radiation induced damage on gate oxide thickness in MOS capacitors with ultrathin gate oxides

Electronics Letters, 1992

The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate ...


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Educational Resources on Interface phenomena

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IEEE-USA E-Books

  • P-type anode structure for GaAs TEDs on semi-insulating substrate

    The use of a p-type anode in a planar GaAs Gunn device was studied for the first time. The undesirable decrease of current for dc bias, compared with pulsed bias, is eliminated by hole injection to the overcritically doped n-layer from a p-n junction anode. These devices have exhibited satisfactory Gunn domain operation for triggered dc operation.

  • New Scheme Of Finite Element Analysis Of A Interface Phenomena Of VCR With Drum, Head And Tape

    None

  • Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO/sub 2/ gate dielectrics

    The radiation-induced interface state generation Delta D/sub it/ in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO/sub 2/. The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface 'hardness' of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides.<<ETX>>

  • Exact resolution of coupled Schrodinger-Poisson equation: application to accurate determination of potential profile in HEMTs

    An exact solution of a combination of the nonlinear Schrodinger and Poisson equations is presented for the study of potential energy and carrier distributions at the interface of a single heterojunction. The shapes of the wave function and the potential (i.e. conduction band bending) are not required to be known a priori and are calculated from the doping rates and energy gaps on both sides of the heterojunction.<<ETX>>

  • Dependence of radiation induced damage on gate oxide thickness in MOS capacitors with ultrathin gate oxides

    The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.<<ETX>>

  • Integral energy and charge calculation near the interface of dissimilar media under gamma irradiation

    The semiempirical model of secondary electron transport is described to estimate the charge and the dose deposition near an interface of dissimilar materials irradiated by /spl gamma/-quanta. In the present work we extend applicability of early developed model to some MeV energy and the arbitrary angle of incidence of the photon. The input of suggested model is the secondary electron yield and effective reflection coefficient. The tables of these parameters were obtained by means of the special Monte Carlo code for Z=6-79 (C, Al, Cu, Ag, Au) and different initial angles of photons with energy 0.1-2 MeV. It is found that energy and particle reflection coefficients differ by the factor of approximately 1.5. The deposited charge calculated according to the model suggested agree with that obtained by direct simulation technique with accuracy less then 10% for every combination of materials in the energy range considered.

  • Hot-hole-induced degradation in polycrystalline silicon thin-film transistors: experimental and theoretical analysis

    The application of bias stress with high source-drain voltage and different gate voltages in polycrystalline silicon thin-film transistors produces marked modifications both in the off current as well as device transconductance. These effects are explained in terms of hot-carrier effects related to a combination of charge injection into the gate insulator and formation of interface states near the drain.<<ETX>>

  • Porous silicon photoluminescence: type II-like recombination mechanism

    The Letter proposes a model to explain the PL mechanism in porous silicon. It was inspired by type II semiconductor interface PL behaviour. In this model, the PS radiative recombinations involve energy levels in the silicon oxide layer. This model takes into account quantum confinement and the energy threshold above which PS PL is observed.<<ETX>>

  • Silicon ultraviolet detectors and modelling

    For ultraviolet radiation the use of silicon photodiodes is limited to specific measured wavelengths because of the difficulties involved with interpolation in that spectral region. The authors assess the feasibility of modelling the behaviour of silicon photodiodes sufficiently well to enable accurate interpolation and to associate uncertainties to the use of models describing the operation of silicon photodiodes in the ultraviolet.<<ETX>>

  • Semi-empirical model of electron mobility in MOSFETS in strong inversion regime

    The authors present a semi-empirical model for the electron mobility in a MOSFET in the strong inversion region. The model includes the contribution of the coulomb, phonon and surface-roughness scattering, and reproduces experimental results with high accuracy in the 77-300 K temperature range. The authors analyse the influence of coulomb scattering on the different terms of the model after stressing the samples with successive Fowler-Nordheim tunnelling-injection series. In addition, it is shown that the terms a priori attributed to coulomb and phonon scattering receive the contribution of both mechanisms and thus cannot be separately attributed to each of them.



Standards related to Interface phenomena

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(Replaced) IEEE Standard VHDL Language Reference Manual

his standard revises and enhances the VHDL language reference manual (LRM) by including a standard C language interface specification; specifications from previously separate, but related, standards IEEE Std 1164 -1993,1 IEEE Std 1076.2 -1996, and IEEE Std 1076.3-1997; and general language enhancements in the areas of design and verification of electronic systems.


IEEE Application Guide for Distributed Digital Control and Monitoring for Power Plants


IEEE Draft Standard for Information technology--Telecommunications and information exchange between systems--Local and metropolitan area networks--Specific requirements Part 3: Carrier Sense Multiple Access with Collision Detection (CSMA/CD) Access Method and Physical Layer SpecificationsAmendment: Media Access Control (MAC) service interface and management parameters to support time synchronization protocols

Amend IEEE Std 802.3-2008 to extend the Media Access Control service interface and add management parameters to provide support for the IEEE 802.1AS time synchronization protocol.


IEEE Recommended Practice for System Identification in Nuclear Power Plants and Related Facilities


IEEE Standard for Backplane Electrical Performance


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Jobs related to Interface phenomena

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