IEEE Organizations related to IEEE Transactions on Components, Packaging, and Manufacturing Technology Part B

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Industry Applications, IEEE Transactions on

The development and application of electric systems, apparatus, devices, and controls to the processes and equipment of industry and commerce; the promotion of safe, reliable, and economic installations; the encouragement of energy conservation; the creation of voluntary engineering standards and recommended practices.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for IEEE Transactions on Components, Packaging, and Manufacturing Technology Part B

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Xplore Articles related to IEEE Transactions on Components, Packaging, and Manufacturing Technology Part B

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Correction to “1997 list of reviewers”

IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1998

The following is a correction to the “List of Reviewers” printed on p. 204 of the May 1998 issue of IEEE's TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY-PART B: ADVANCED PACKAGING.


The International Conference On Innovative Systems In Silicon (ISIS '96)

IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1997

None


Programmable neural logic

IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1998

Circuits of threshold elements (Boolean input, Boolean output neurons) have been shown to be surprisingly powerful. Useful functions such as XOR, ADD and MULTIPLY can be implemented by such circuits more efficiently than by traditional AND/OR circuits. In view of that, we have designed and built a programmable threshold element. The weights are stored on polysilicon floating gates, providing long-term ...


Three-dimensional memory module

IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1998

Demand has recently increased for high packaging density and memory capacity of memory modules for electronic equipment. The new three-dimensional memory module satisfies this demand. This module has almost the same size as single memory packages [thin small outline packages (TSOPs): 17.4/spl times/9.22/spl times/1.2 mm] currently being used, and a package density four times as large. Electrical performance is better ...


Polymeric conductive pastes as solder replacement for flip-chip attachment

IEEE Transactions on Components, Packaging, and Manufacturing Technology: Part B, 1998

The fabrication and characterization of flip-chip assemblies using four polymeric conductive pastes as attachment materials are reported. Three thermoset and one thermoplastic polymeric conductive pastes were investigated. Polymeric conductive pastes having silver particles 2 μm in size made good contact to either smooth or rough metal. Electrical contact with pastes whose particles were 5 μm or larger could only be ...


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Educational Resources on IEEE Transactions on Components, Packaging, and Manufacturing Technology Part B

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IEEE-USA E-Books

  • Correction to “1997 list of reviewers”

    The following is a correction to the “List of Reviewers” printed on p. 204 of the May 1998 issue of IEEE's TRANSACTIONS ON COMPONENTS, PACKAGING, AND MANUFACTURING TECHNOLOGY-PART B: ADVANCED PACKAGING.

  • The International Conference On Innovative Systems In Silicon (ISIS '96)

    None

  • Programmable neural logic

    Circuits of threshold elements (Boolean input, Boolean output neurons) have been shown to be surprisingly powerful. Useful functions such as XOR, ADD and MULTIPLY can be implemented by such circuits more efficiently than by traditional AND/OR circuits. In view of that, we have designed and built a programmable threshold element. The weights are stored on polysilicon floating gates, providing long-term retention without refresh. The weight value is increased using tunneling and decreased via hot electron injection. A weight is stored on a single transistor allowing the development of dense arrays of threshold elements. A 16-input programmable neuron was fabricated in the standard 2 μm double-poly, analog process available from MOSIS. We also designed and fabricated the multiple threshold element introduced in [5]. It presents the advantage of reducing the area of the layout from O(n2) to O(n), (n being the number of variables) for a broad class of Boolean functions, in particular symmetric Boolean functions such as PARITY. A long term goal of this research is to incorporate programmable single/multiple threshold elements, as building blocks in field programmable gate arrays.

  • Three-dimensional memory module

    Demand has recently increased for high packaging density and memory capacity of memory modules for electronic equipment. The new three-dimensional memory module satisfies this demand. This module has almost the same size as single memory packages [thin small outline packages (TSOPs): 17.4/spl times/9.22/spl times/1.2 mm] currently being used, and a package density four times as large. Electrical performance is better than that of TSOP's because the length of the wires is about half that of the TSOP's wires. Moreover, the cost of fabrication of this module is low. This paper reports the module's characteristics and fabrication process. The design concept is that next- generation memory devices will be produced by using current mass-produced memory devices.

  • Polymeric conductive pastes as solder replacement for flip-chip attachment

    The fabrication and characterization of flip-chip assemblies using four polymeric conductive pastes as attachment materials are reported. Three thermoset and one thermoplastic polymeric conductive pastes were investigated. Polymeric conductive pastes having silver particles 2 μm in size made good contact to either smooth or rough metal. Electrical contact with pastes whose particles were 5 μm or larger could only be obtained on rough metal.

  • Temperature and stress time history responses in electronic packaging

    The closed-form thermoelasticity solutions of electronic packages subjected to an instantaneous source of heat, and a heat source varying harmonically as function of time, are presented. Useful curves and charts which relate the variables, time, frequency, heat, temperature, stress, displacement, and material property are also provided for engineering practice convenience. Also, the present results can be used to verify finite element analysis procedures and interpret experimental data.

  • Integration of vapor deposited polyimide into a multichip module packaging process

    We report the first full integration of a vapor-deposited polyimide dielectric into a multichip module (MCM) electronic packaging scheme. A robust high- throughput vapor deposition polymerization (VDP) of polyimide has been developed for an interconnection scheme in which thin film metal interconnects are patterned from the top of bare die, down the sides, and onto the substrate circuit board surface. VDP polyimides films have been extensively characterized using infrared spectroscopy and prism coupling techniques. The chemical and electrical properties of the VDP polyimide films are similar to commercially available spin cast polyimides.

  • Aging effects on shear fatigue life and shear strength of soldered thick film joints

    The effects of tin diffusion, silver and palladium dispersion, and intermetallic compound growth on the shear fatigue of solder joints between thick film mixed bonded conductor Pd-Ag and solder 62Sn-36Pb-2Ag are investigated. Microstructural analysis reveals that the intermetallic compounds (IMC's) Pd<inf>3</inf>Sn<inf>3</inf>, Pd<inf>3</inf>Sn, Pd<inf>2</inf>Sn, Pd<inf>3</inf>Sn<inf>2</inf>, PdSn, PdSn<inf>2</inf>, PdSn<inf>4</inf>, Ag<inf>5</inf>Sn, Ag<inf>3</inf>Sn, PbPd<inf>3</inf>, and Pb<inf>3</inf>Pd<inf>5</inf> are formed after aging. X-ray dot maps demonstrate that the longer the aging time, the more serious the silver and palladium dispersion into the solder and the tin diffusion into the conductor. It is observed that the tin diffuses to the interface of the substrate/conductor after 120 h aging. Shear strength tests with different strain rate show that the adhesion strength decreases with prolongation of aging time. Shear cycling tests indicate that the fatigue lifetime of the solder joints depends on the diffusion depth of the silver and palladium, especially the tin diffusion into the thick film conductor. The above results mean that the more serious is the tin and silver interdiffusion, and the more IMC's is formed in the solder joint (which effects are the results of prolonged storage at high temperature or of long term operation in real SMT assemblies), the more sensitive is the solder joint to stress. Eventually fatigue failure of the joint may result. It is argued that volume change and increased brittleness caused by the intermetallic formation, and volume swelling of the conductor layer due to tin diffusion, are major factors in the decrease of fatigue lifetime and degradation of the shear strength of the solder joints.

  • Field-based analysis of a high pincount board connector

    We present the results of a field-based 3-D time domain simulation of a high pincount board connector. The results of the simulation are the crosstalk for a large frequency range and the field patterns inside the structure at certain frequencies. The computer code we use is based on the finite-integration- technique (FIT). We present the scattering parameters in the frequency range of 0-3 GHz, the time domain reflection and near-end crosstalk of a ramp (both measurement and simulation), and field patterns obtained at 3 GHz.

  • Gold-to-gold TAB ILB with a laser

    A new method for bonding gold plated TAB leads to gold bumps is presented. This method uses a frequency doubled Nd:YAG laser which provides energy in both the visible (0.533 /spl mu/m) and near IR (1.064 /spl mu/m) spectra. This combination of wavelengths overcomes the difficulty of bonding gold with only 1.064 /spl mu/m radiation where 98% of the radiation is reflected. In the method presented in this paper, 0.533-/spl mu/m radiation, of which 25-50% is absorbed by gold, is used to heat the gold which becomes more absorptive to the 1.064-/spl mu/m radiation that is used to form the bond. Bonding experiments were conducted and samples were exposed to environmental testing. While there were initial bond failures, 85% of the bonds did not degrade during environmental exposure indicating the potential for the process.<<ETX>>



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