Conferences related to Dielectric films

Back to Top

2021 IEEE Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


More Conferences

Periodicals related to Dielectric films

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


More Periodicals

Most published Xplore authors for Dielectric films

Back to Top

Xplore Articles related to Dielectric films

Back to Top

Noncontact characterization of crystal surface and thin films by the phase velocity scanning of laser interference fringes

1994 Proceedings of IEEE Ultrasonics Symposium, 1994

We present the first application of a novel noncontact velocity measurement method of surface acoustic waves (SAW) to evaluation of thin films. This method uses laser interference fringes scanned at the phase velocity of SAW. The scanning interference fringes (SIF) are produced by intersecting two laser beams with a frequency difference. It was found that the Si<sub>3</sub>N<sub>4</sub> film prepared by ...


Interfacial adhesion of copper-low k interconnects

Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461), 2001

Adhesion energies of Cu-low k dielectric interfaces, measured with the technique of four-point bending, show a correlation to chemical mechanical polish results. A limit of 5 J/m/sup 2/ is established, below which thin film delamination and cracking are observed. In general, spin-on polymer dielectrics exhibit better adhesion to barrier films than carbon-doped oxide dielectrics. PVD barriers exhibit better adhesion to ...


Resonant cavity photodetector with integrated spectral notch filter

IEEE Photonics Technology Letters, 1998

A p-i-n resonant cavity enhanced photodetector for absorption at 1.55 μm has been integrated with two stacks of six pairs of ZnSe-MgF2dielectric mirrors. The stacks act as a notch filter to reflect off-peak radiation. Peak external quantum efficiency over 90% was achieved at 1.52 μm, with off-peak rejection of approximately 20 dB across a 700-nm range. Design of the structure ...


A novel solution for porous low-k dual damascene post etch stripping/clean with supercritical CO/sub 2/ technology for 65nm and beyond applications

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., 2004

Supercritical C0/sub 2/ technology for single and dual damascene post etch stripping and clean was successfully demonstrated on 65nm technology node. Both bulk film composition analysis and electrical performance on 300mm have been investigated in the present work. With superior compatibility for porous low-k materials, complete removal of photo resist and residue with better leakage and RC delay performance was ...


New structure 1608 size chip tantalum capacitor -6.3 WV-10 /spl mu/F with face-down terminals for fillet-less surface mounting

2001 Proceedings. 51st Electronic Components and Technology Conference (Cat. No.01CH37220), 2001

This paper introduces the smallest size, 1608 (in mm) size, and the newest series of chip tantalum capacitors having the highest capacitance value in the world at present by means of original new packaging technology and new assembly process. Recent requirements for tantalum chip capacitors from smaller digital mobile equipment, especially Mobile Phone, PDA (Personal Digital Assistant), Pager, DVC (Digital ...


More Xplore Articles

Educational Resources on Dielectric films

Back to Top

IEEE.tv Videos

Micro-Apps 2013: Determining Circuit Material Dielectric Constant from Phase Measurements
IMS 2011 Microapps - Understanding the Proper Dielectric Constant of High Frequency Laminates to Be Used for Circuit Modeling and Design
IEEE Magnetics Distinguished Lecture - Mitsuteru Inoue
Perpendicular magnetic anisotropy: From ultralow power spintronics to cancer therapy
The Josephson Effect: The Observations of Josephson's Effects
Fast Scale Prototyping for Folded Millirobots
35 Years of Magnetic Heterostructures
IMS 2014: LNA Modules for the WR4 (170-260 GHz) Frequency Range
The Josephson Effect: The Original SQUIDs
Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase
International Broadcast Conference(IBC) News: Segment 4
Nanotechnology For Electrical Engineers
IEEE-HKN presents: Engineering - The Challenge of the Future
Brooklyn 5G Summit: Expanding the Human Possibilities with 5G
Is the Future of Humanity Bionic? - IEEE TechEthics Virtual Panel
Robot Storytelling for Ethical Origins, Services, and Futures: IEEE TechEthics Featured Talk with Heather Knight
Larson Collection interview with John V. Atanasoff
Magnetics + Mechanics + Nanoscale = Electromagnetics Future - Greg P. Carman: IEEE Magnetics Distinguished Lecture 2016
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 2 of 7 - Gordon Donaldson: A Memory - part II - Colin Pegrum
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 1 of 7 - Gordon Donaldson: A Memory - part I - John Clarke

IEEE-USA E-Books

  • Noncontact characterization of crystal surface and thin films by the phase velocity scanning of laser interference fringes

    We present the first application of a novel noncontact velocity measurement method of surface acoustic waves (SAW) to evaluation of thin films. This method uses laser interference fringes scanned at the phase velocity of SAW. The scanning interference fringes (SIF) are produced by intersecting two laser beams with a frequency difference. It was found that the Si<sub>3</sub>N<sub>4</sub> film prepared by low pressure CVD had similar elastic properties to that of a sintered body. The dispersive Sezawa waves on the flame hydrolysis deposited SiO<sub>2</sub> films on Si (100) surface were detected. Comparing the measured Sezawa wave velocity with calculated velocity, the films were found to be much softer than bulk SiO<sub>2</sub> (fused quartz)

  • Interfacial adhesion of copper-low k interconnects

    Adhesion energies of Cu-low k dielectric interfaces, measured with the technique of four-point bending, show a correlation to chemical mechanical polish results. A limit of 5 J/m/sup 2/ is established, below which thin film delamination and cracking are observed. In general, spin-on polymer dielectrics exhibit better adhesion to barrier films than carbon-doped oxide dielectrics. PVD barriers exhibit better adhesion to low k dielectric films than CVD barriers. Surface treatments of the dielectric film before barrier deposition are found to strongly modulate CVD barrier to spin-on polymer adhesion.

  • Resonant cavity photodetector with integrated spectral notch filter

    A p-i-n resonant cavity enhanced photodetector for absorption at 1.55 μm has been integrated with two stacks of six pairs of ZnSe-MgF2dielectric mirrors. The stacks act as a notch filter to reflect off-peak radiation. Peak external quantum efficiency over 90% was achieved at 1.52 μm, with off-peak rejection of approximately 20 dB across a 700-nm range. Design of the structure was based on simulations using the transfer matrix method.

  • A novel solution for porous low-k dual damascene post etch stripping/clean with supercritical CO/sub 2/ technology for 65nm and beyond applications

    Supercritical C0/sub 2/ technology for single and dual damascene post etch stripping and clean was successfully demonstrated on 65nm technology node. Both bulk film composition analysis and electrical performance on 300mm have been investigated in the present work. With superior compatibility for porous low-k materials, complete removal of photo resist and residue with better leakage and RC delay performance was achieved for the first time.

  • New structure 1608 size chip tantalum capacitor -6.3 WV-10 /spl mu/F with face-down terminals for fillet-less surface mounting

    This paper introduces the smallest size, 1608 (in mm) size, and the newest series of chip tantalum capacitors having the highest capacitance value in the world at present by means of original new packaging technology and new assembly process. Recent requirements for tantalum chip capacitors from smaller digital mobile equipment, especially Mobile Phone, PDA (Personal Digital Assistant), Pager, DVC (Digital Video Camera), DSC (Digital Still Camera), MD Player (Mini-disk Player), are smaller size and lower profile with higher capacitance. As an answer for those requirements, we have developed 6.3 WV-10 /spl mu/F in 1608 size (L=1.6O mm, W-0.85 mm, t-0.80 mm), which has original new structure by adopting original new process technologies, and has face-down terminals to be available fillet-less surface mounting instead of conventional style, 2012 Size (L=2.0 mm, W=1.25 mm, t=12 mm). The original new process means "Matrix Array Packaging Technology" using matrix lead frame, it means batch molding system instead of individual molding and processing system. 6.3 WV-10 /spl mu/F in conventional style, 2012 size, is a typical item used for digital mobile equipment at present in Japan.; Therefore it is very important in Tantalum Capacitors Industry to develop 6.3 WV-10 /spl mu/F in 1608 Size. Our new structure 1608 size is about three times higher in volumetric efficiency, compared to the conventional style, 2012 size. This item is the smallest in volume and the highest value in capacitance in the world at the present time.

  • Effects of dielectric layers on TbFeCo magneto-optical disk

    In the present work, we examine the possibilities for enhancing the sensitivity and reliability of magneto-optical disks, mainly from the standpoint of the refractive index and thermal properties of various kinds of dielectric films.

  • Adaptation of the thermal pulse method to the measurement of the thermal diffusivity of dielectric films on conducting substrates

    A simple method of measuring the thermal diffusivity of dielectric films on thermally highly conducting substrates is proposed and demonstrated. It is an adaptation of the thermal pulse method of measuring charge and polarization profiles. The diffusivity is derived from the transient electrical response induced by a thermal pulse applied to a voltage-biased sample. The response is proportional to both the bias voltage and the thermal pulse energy so that the signal-to-noise ratio may be increased by increasing either or both variables to obtain the diffusivity with high accuracy. This technique is demonstrated on two polyimide films a few micrometers thick spin-coated on silicon substrates, one a conventional polyimide and the other a rigid rod variety with in-plane rod orientation. For the conventional polyimide, the out-of- plane diffusivity obtained here is comparable to the in-plane diffusivity measured by others using another technique. For the rigid rod type, strong anisotropy is found establishing that the thermal diffusivity is strongly affected by molecular orientation.

  • Suppression of Cu extrusion into porous-MSQ film during chip-reliability test

    We have found that Cu-line walls located along the peripheral of the test chips improve lifetime in chip-level electromigration (EM) test and time- dependent dielectric breakdown (TDDB) test for Cu/porous-methyl-silsesquioxane (MSQ) structure. After EM test at elevated temperatures, Cu loss and extrusion are greatly suppressed in the samples with the walls. They seem to be promoted by any reactants such as moisture or oxidant penetrated from the surface on the chip side and to cause short EM lifetime. Therefore, the above layout is effective and essential in future Cu/low-k integrity.

  • Nearly bird's beak-free local oxidation technology for controlled dielectric formation in deep silicon trenches

    Silicon deep trench isolation technology using local oxidation is reported. Scaled, high-density trench capacitors were fabricated with varying trench aspect ratios. Nearly bird's beak-free local oxidation resulted in a controlled growth of silicon dioxide on the trench bottom surfaces and significantly improved the trench gate MOS isolation characteristics. Detailed MOS capacitance measurements were performed and wafer yield in excess of 90% was demonstrated across 4 inch diameter silicon wafers.<<ETX>>

  • Electrical properties of sandwich structures with aluminum nitride layers

    Electrical properties of adherent, low stressed aluminum nitride films prepared by magnetron sputtering have been studied. Arrhenius plots in the 100/spl deg/-170/spl deg/C range of temperature and transient current curves with different bias steps (at room temperature and 150/spl deg/C) have been performed. The conduction activation energy has been found and its dependence on subsequent annealings has been studied. A phenomenological conduction model at the ITO-AlN interface based on the shape of the transient curves has been elaborated. The conditions of behaviour of AlN as a highly insulating layer (sputtering conditions, thicknesses, annealing temperatures) have been established.



Standards related to Dielectric films

Back to Top

No standards are currently tagged "Dielectric films"


Jobs related to Dielectric films

Back to Top