Conferences related to Aluminum oxide

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2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 11th International Memory Workshop (IMW)

The IMW is a unique forum for specialists in all aspects of memory (nonvolatile & volatile)microelectronics and people with different backgrounds who wish to gain a better understandingof the field. The morning and afternoon technical sessions are organized in a manner thatprovides ample time for informal exchanges amongst presenters and attendees. The eveningpanel discussions will address hot topics in the memory and memory system field. Papers aresolicited in all aspects of semiconductor memory technology (Flash, DRAM, SRAM, PCRAM,RRAM, MRAM, embedded memory, and other NV memories).


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


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Periodicals related to Aluminum oxide

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Xplore Articles related to Aluminum oxide

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Characterization of Inter-Poly High- κ Dielectrics for Next Generation Stacked-Gate Flash Memories

2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006

In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can ...


Ald aluminum oxide as protective coating against oxidation of LPCVD SiC microhotplates

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS), 2013

Here we present a method to strongly reduce the oxidation of conductive polycrystalline silicon carbide (poly-SiC) layers. We employed a thin (45 nm) layer of aluminum oxide (Al2O3) as protective coating against oxidation. This layer was deposited by atomic layer deposition (ALD) to achieve a high quality and conformal coating. Microheaters made of nitrogen doped poly-SiC (poly- SiC:N) were oxidized ...


Construction analysis of flip chip package for aerospace application

2017 18th International Conference on Electronic Packaging Technology (ICEPT), 2017

Eight typical flip chip packages were adopted in this study, two domestic, six imported, and five of the six imported were models with experience of aerospace application. The construction and material of these flip chip packages were analyzed, and similarities and differences between the domestic and the imported packages were compared. Construction analysis criteria of flip chip package for aerospace ...


Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

IEEE Electron Device Letters, 2014

We report a high-performance normally-off Al2O3/AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency- dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing ...


Excellent passivation and low reflectivity Al<inf>2</inf>O<inf>3</inf> /TiO<inf>2</inf> bilayer coatings for n-wafer silicon solar cells

2012 38th IEEE Photovoltaic Specialists Conference, 2012

A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear- emitter and interdigitated ...


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Educational Resources on Aluminum oxide

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IEEE-USA E-Books

  • Characterization of Inter-Poly High- κ Dielectrics for Next Generation Stacked-Gate Flash Memories

    In this paper, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3and HfO2IPDs are studied, which are then compared with TEOS IPD. Regardless of deposition tools, drastically leakage current reduction and reliability improvements have been demonstrated by replacing TEOS IPD with high-permittivity (high-κ) IPDs, which are suitable for mass production applications in the future. Moreover, MOCVD deposition can be used to further promote dielectric reliability when compared to reactive- sputtering deposition. By using MOCVD deposition, the QBDcan be significantly improved, in addition to reduced leakage current density, enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that both MOCVD-Al2O3and MOCVD-HfO2IPD possess great potential for next generation stacked-gate flash memories.

  • Ald aluminum oxide as protective coating against oxidation of LPCVD SiC microhotplates

    Here we present a method to strongly reduce the oxidation of conductive polycrystalline silicon carbide (poly-SiC) layers. We employed a thin (45 nm) layer of aluminum oxide (Al2O3) as protective coating against oxidation. This layer was deposited by atomic layer deposition (ALD) to achieve a high quality and conformal coating. Microheaters made of nitrogen doped poly-SiC (poly- SiC:N) were oxidized at elevated temperatures in both wet and dry atmospheres. Electrical characterizations of the microheaters show that the proposed coating is able to reduce the oxide growth by a factor of 11 for wet oxidation at 1000 °C.

  • Construction analysis of flip chip package for aerospace application

    Eight typical flip chip packages were adopted in this study, two domestic, six imported, and five of the six imported were models with experience of aerospace application. The construction and material of these flip chip packages were analyzed, and similarities and differences between the domestic and the imported packages were compared. Construction analysis criteria of flip chip package for aerospace application were summarized based on these results. The results of this study could play an important guiding role in construction analysis of aerospace flip chip package components.

  • Al<sub>2</sub>O<sub>3</sub>/AlN/GaN MOS-Channel-HEMTs With an AlN Interfacial Layer

    We report a high-performance normally-off Al2O3/AlN/GaN MOS-channel-high electron mobility transistor (MOSC-HEMT) featuring a monocrystalline AlN interfacial layer inserted between the amorphous Al2O3 gate dielectric and the GaN channel. The AlN interfacial layer effectively blocks oxygen from the GaN surface and prevents the formation of detrimental Ga-O bonds. Frequency- dispersion in C-V characteristics and threshold voltage hysteresis are effectively suppressed, owing to improved interface quality. The new MOSC- HEMTs exhibit a maximum drain current of 660 mA/mm, a field-effect mobility of 165 cm2/V·s, a high on/off drain current ratio of ~1010, and low dynamic on- resistance degradation.

  • Excellent passivation and low reflectivity Al<inf>2</inf>O<inf>3</inf> /TiO<inf>2</inf> bilayer coatings for n-wafer silicon solar cells

    A bilayer coating of Al2O3 and TiO2 is used to simultaneously achieve excellent passivation and low reflectivity on p-type silicon. This coating is targeted for achieving high efficiency n-wafer Si solar cells, where both passivation and anti-reflection (AR) are needed at the front-side p-type emitter. It could also be valuable for front-side passivation and AR of rear- emitter and interdigitated back contact p-wafer cells. We achieve high minority carrier lifetimes ~1 ms, as well as a nearly 2% decrease in absolute reflectivity, as compared to a standard silicon nitride AR coating.

  • Ultimate scalability of TaN metal floating gate with incorporation of high-K blocking dielectrics for Flash memory applications

    We have investigated ultrathin TaN metal floating gate (FG) with Hf based high-K interpoly dielectrics (IPD) for NAND Flash applications. In an attempt to investigate the memory behavior as the FG thickness is reduced, scalability of TaN FG down to 1 nm thickness has been explored. We have demonstrated excellent memory performance with program-erase (P-E) window as large as 16V. Our results indicate that high-K based IPD in conjunction with ultra-thin TaN metal FG can enable further scaling of NAND Flash memory beyond conventional oxide-nitride-oxide (ONO) based IPD technology.

  • Functional oxide as an extreme high-k dielectric towards 4H-SiC MOSFET incorporation

    MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO3ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO3on SiC, ABO3on SiC with a SiO2buffer (10 nm and 40 nm) and ABO3on SiC with an Al2O3buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al2O3buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ~ 0.2 μF/cm2in the accumulation region indicating a dielectric constant of ~120.

  • Hydrogen behavior from ALD Al<inf>2</inf>O<inf>3</inf> passivation layer for amorphous InGaZnO TFTs

    The characteristics of amorphous indium gallium zinc oxide (a-InGaZnO) thin- film transistors (TFTs) fabricated using atomic layer deposition (ALD) Al2O3 passivation layer and hydrogen distribution in a-InGaZnO were investigated by comparison with plasma enhanced chemical vapor deposition (PECVD) passivation layer. TFTs fabricated using PECVD passivation layer showed conductive or hump behavior, while that fabricated using ALD passivation layer showed enhancement type characteristics. According to secondary ion mass spectroscopy analysis, hydrogen was introduced into a-InGaZnO during PECVD, while it was hardly introduced during ALD regardless of considerable hydrogen in Al2O3. Thus, the behavior of hydrogen in a-InGaZnO is one possible cause of the difference in TFT characteristics between PECVD and ALD passivation.

  • Thermal and electrical experimental characterization of Ethylene Glycol and water mixture nanofluids for a 400w Proton Exchange Membrane Fuel Cell

    Nanofluid is an emerging technology in heat transfer study. The effect of nanofluids as a cooling medium in liquid cooled Proton Exchange Membrane Fuel Cell (PEMFC) is studied. Nanofluids with 0.1% and 0.5% volume concentration of Al<sub>2</sub>O<sub>3</sub> are dispersed in base fluid of 50:50 mixture of Ethylene Glycol and water were analyzed experimentally. A rated power of 400 W liquid cooled PEMFC was used to verify the findings. The result showed that insignificant improvement in performance of PEMFC with nanofluids through polarization curve findings, perhaps due to the lower wattage of PEMFC used. The advantage of nanofluids utilization in PEMFC might be visible in higher wattage of PEMFC due to higher working fluid temperature. Higher thermal conductivity of nanofluid at higher temperature is expected to give advantage in terms of polarization curve of a PEMFC. However, the thermal performance is improved through the heat transfer rate increment of 68.5 % and 46 % for both 0.5 % of Al<sub>2</sub>O<sub>3</sub> nanofluid and 0.1 % of Al<sub>2</sub>O<sub>3</sub> nanofluid respectively.

  • P(VDF-TrFE)/Al<inf>2</inf>O<inf>3</inf>piezoelectric nanocomposite thin films

    Alumina nanoparticles were incorporated into copolymer of vinylidene difluoride and trifluoroethylene (P(VDF-TrFE)) to form nanocomposite. Thin films were prepared on silicon wafers and some acoustic, optical and mechanical properties were studied by Brillouin spectroscopy. The morphology of the polymer and the dispersion quality of the nanoparticles were observed by Transmission Electron Microscopy. The refractive index was shown to be relatively constant with the concentration of nanoparticles. The acoustic wave velocity and the elastic constant of the material increase linearly with weight percentage of nanoparticles. Such improvement in material properties might be attributed to the intermolecular hydrogen bonding between hydroxyl groups of the surface of alumina nanoparticles and the copolymer matrix.



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