Conferences related to Bonding forces

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2020 19th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

The ITherm Conference series is the leading international venue for scientific and engineering exploration of thermal, thermomechanical, and emerging technology issues associated with electronic devices, packages, and systems.


2020 57th ACM/ESDA/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2019 56th ACM/ESDA/IEEE Design Automation Conference (DAC)

    EDA (Electronics Design Automation) is becoming ever more important with the continuous scaling of semiconductor devices and the growing complexities of their use in circuits and systems. Demands for lower-power, higher-reliability and more agile electronic systems raise new challenges to both design and design automation of such systems. For the past five decades, the primary focus of research track at DAC has been to showcase leading-edge research and practice in tools and methodologies for the design of circuits and systems.

  • 2018 55th ACM/ESDA/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2016 53nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.

  • 2006 43rd ACM/IEEE Design Automation Conference (DAC)

  • 2005 42nd ACM/IEEE Design Automation Conference (DAC)

  • 2004 41st ACM/IEEE Design Automation Conference (DAC)

  • 2003 40th ACM/IEEE Design Automation Conference (DAC)

  • 2002 39th ACM/IEEE Design Automation Conference (DAC)

  • 2001 38th ACM/IEEE Design Automation Conference (DAC)

  • 2000 37th ACM/IEEE Design Automation Conference (DAC)

  • 1999 36th ACM/IEEE Design Automation Conference (DAC)

  • 1998 35th ACM/IEEE Design Automation Conference (DAC)

  • 1997 34th ACM/IEEE Design Automation Conference (DAC)

  • 1996 33rd ACM/IEEE Design Automation Conference (DAC)


2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Robotics and Automation (ICRA)

The International Conference on Robotics and Automation (ICRA) is the IEEE Robotics and Automation Society’s biggest conference and one of the leading international forums for robotics researchers to present their work.


2020 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Bonding forces

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Circuits and Systems for Video Technology, IEEE Transactions on

Video A/D and D/A, display technology, image analysis and processing, video signal characterization and representation, video compression techniques and signal processing, multidimensional filters and transforms, analog video signal processing, neural networks for video applications, nonlinear video signal processing, video storage and retrieval, computer vision, packet video, high-speed real-time circuits, VLSI architecture and implementation for video technology, multiprocessor systems--hardware and software-- ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


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Most published Xplore authors for Bonding forces

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Xplore Articles related to Bonding forces

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Integrated temperature microsensors for characterization and optimization of thermosonic ball bonding process

IEEE Transactions on Components and Packaging Technologies, 2000

A novel ball bond process optimization method based on the thermal response of an integrated aluminum microsensor is reported. The in situ temperature during ball bonding is measured and analyzed. The ultrasonic period shows distinct stages corresponding to scrubbing of the ball on the pad, intermetallic bond growth, and ball deformation by ultrasonic softening. A peak of the signal indicates ...


Simulation of three-dimensional wirebond deformation during transfer molding

1995 Proceedings. 45th Electronic Components and Technology Conference, 1995

During the transfer molding process, flow induced forces act on the wirebonds causing them to deform. If the deformation is excessive, package failure may arise. This paper describes the computer simulation of three-dimensional wirebond deformation using a boundary integral method. The accuracy of the method was verified by experiment. The method was then applied to a case study involving a ...


Fabrication method of sub-micrometer size planar gap for the micro fabry-perot interferometer

2008 IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008

This paper reports on a fabrication method of sub-micrometer size tunable planar gaps for micro Fabry-Perot interferometers. We made an upper unit with a movable sub-micrometer step and a lower unit, separately. The upper unit was picked up and transferred to the lower unit by the stamping apparatus, and bonded to the lower unit by fusion bonding. Since the force ...


Gold wire bonding on low-k material: a new challenge for interconnection technology

IEEE/CPMT/SEMI 29th International Electronics Manufacturing Technology Symposium (IEEE Cat. No.04CH37585), 2004

The gold wire bond technology is still widely used in back end assembly. Even for conventional devices the wire bond technology applies mechanical stress on the bond pad and substrate layers, which leads to known damages like cratering and oxide cracks. The parameter combination of ultrasonic power and impact force may cause serious mechanical damage on the device. The wire ...


Effects of Ultrasonic Power and Time on Bonding Strength and Interfacial Atomic Diffusion During Thermosonic Flip–Chip Bonding

IEEE Transactions on Components, Packaging and Manufacturing Technology, 2012

In this paper, bonding strength of thermosonic flip-chip (FC) bonding was tested by a Dage 4000 bonding tester, atomic diffusion of bonding interfaces was detected by a scanning transmission electron microscope, and deformation of the bumps was observed by X-ray inspection system. Experimental results show that moderate ultrasonic power (about 4 W) results in higher shear strength of FC interfaces, ...


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Educational Resources on Bonding forces

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IEEE-USA E-Books

  • Integrated temperature microsensors for characterization and optimization of thermosonic ball bonding process

    A novel ball bond process optimization method based on the thermal response of an integrated aluminum microsensor is reported. The in situ temperature during ball bonding is measured and analyzed. The ultrasonic period shows distinct stages corresponding to scrubbing of the ball on the pad, intermetallic bond growth, and ball deformation by ultrasonic softening. A peak of the signal indicates the end of interconnection growth. This can be used for bond time optimization. When optimizing bonding force, the sensor signal correlates with ball shear strength. Using this method, bonding force process windows can be determined by on-line measurements. A test measurement shows that at a chip temperature of 34/spl deg/C, the bonding force optimized by the microsensor method is 260 mN whereas it is 252 mN when using conventional shear testing for optimization. In summary, the method produces a wealth of new insights in transient thermal phenomena of the ball bonding process and promises to simplify the evaluation of process windows.

  • Simulation of three-dimensional wirebond deformation during transfer molding

    During the transfer molding process, flow induced forces act on the wirebonds causing them to deform. If the deformation is excessive, package failure may arise. This paper describes the computer simulation of three-dimensional wirebond deformation using a boundary integral method. The accuracy of the method was verified by experiment. The method was then applied to a case study involving a 25-leaded IC package.

  • Fabrication method of sub-micrometer size planar gap for the micro fabry-perot interferometer

    This paper reports on a fabrication method of sub-micrometer size tunable planar gaps for micro Fabry-Perot interferometers. We made an upper unit with a movable sub-micrometer step and a lower unit, separately. The upper unit was picked up and transferred to the lower unit by the stamping apparatus, and bonded to the lower unit by fusion bonding. Since the force during fusion bonding acts within a few nanometers only, the sub-micrometer size planar gap can be built. By using this fabrication method, we fabricated the 850 nm gap with a movable planar mirror of 500 mum in diameter. The gap was changed from 825 nm to 1020 nm by applying the voltage of 24 V.

  • Gold wire bonding on low-k material: a new challenge for interconnection technology

    The gold wire bond technology is still widely used in back end assembly. Even for conventional devices the wire bond technology applies mechanical stress on the bond pad and substrate layers, which leads to known damages like cratering and oxide cracks. The parameter combination of ultrasonic power and impact force may cause serious mechanical damage on the device. The wire bond technology is a trade off between proper interconnection on gold and aluminum and prevention of any mechanical damage on the stacks under the aluminum pad. Therefore it is crucial to control these parameters precisely in a defined and tight range. In terms of mechanical response on stress factors, low-k material is very sensitive. Wire bonding equipment needs to address this issue and must be designed for such a challenge. This investigation gave a first attempt to bond low-k material. Additional tests have to be carried out in order to study the effects of stress behavior, oxide cracks and also the influence of the bond parameter regarding different pad metal structures and low-k materials.

  • Effects of Ultrasonic Power and Time on Bonding Strength and Interfacial Atomic Diffusion During Thermosonic Flip–Chip Bonding

    In this paper, bonding strength of thermosonic flip-chip (FC) bonding was tested by a Dage 4000 bonding tester, atomic diffusion of bonding interfaces was detected by a scanning transmission electron microscope, and deformation of the bumps was observed by X-ray inspection system. Experimental results show that moderate ultrasonic power (about 4 W) results in higher shear strength of FC interfaces, while excessively high ultrasonic power induces larger displacement of vibration to damage bonding performance. Appropriate ultrasonic bonding time (about 100 ms) leads to the optimal thickness of atomic diffusion at the interfaces (about 200 nm) and better bonding bump shear strength with an average of 75 g. Overlong ultrasonic bonding time obviously aggravates the deformation of the bumps, which reduces bonding precision, thickens the thickness of atomic diffusion at the interfaces and damages the bonding strength. So, optimized parameters of ultrasonic power of 4 W and ultrasonic bonding time of 100 ms are proposed to improve the quality and performance of FC bonding.

  • Effect of the tin target current on the morphologies and properties of the AlSn20 coating deposited by magnetron sputtering

    The AlSn20 coatings on bearing alloy were deposited using magnetron sputtering technology. The influence of tin target current on the microstructure, hardness, corrosion resistance, bonding force and friction coefficient were analyzed. The results show that when the tin target current are in the scope of 0.19A ∼0.25A, with the decreasing of it, the coating changes from rough structure to fine structure. The hardness of the coating is inversely proportional to the tin target current. When tin target current is 0.19A, its hardness is the hardest, i.e 79HV0.025, the bonding force between coating and matrix is 36N and the friction coefficient achieves 0.15.

  • Measurement of electron transport and mechanical properties of single molecules

    We have developed a method to determine the conductance of single molecules covalently bonded to gold electrodes by repeatedly forming a large number of molecular junctions. We create each molecular junction by separating two Au electrodes from contact in a solution containing the sample molecules. During the separation, we simultaneously measure the conductance and the force between the two electrodes. The conductance decreases in discrete steps, corresponding to the breakdown of individual molecules covalently bonded to the electrodes. Each discrete drop in the conductance is accompanied by a discrete drop in the force, which allows us to determine the bonding strength of the molecule to the electrodes. We have also determined the effective spring constant of a single molecule and the dependence of the conductance on the applied force.

  • The advanced improvement of PN mesa junction diode prepared by silicon-wafer direct bonding

    The key processes of Silicon-Wafer Direct Bonding (SDB), hydrophilic surface formation and optimum two-step heat treatment have been developed. However, there are still many unknown factors, such as native oxide, defects etc., influencing the characteristics of the bonded interface of Si/Si. The additional wafer treatment in diluted HF solution after hydrophilic surface formation can not only etch off native oxide but also form hydrophilic surface, and provide a voidless Si/Si bonding interface. The electrical characteristics of both N/sup +//P and N/P junction mesa diodes prepared by this novel SDB process were examined. Both of them have excellent electrical characteristics and their breakdown voltages are all over 280 V.<<ETX>>

  • Contact printing for improved bond-strength of patterned adhesive full-wafer bonded 0-level packages

    This paper reports on a novel technology using Benzocyclobutene (BCB) contact printing to significantly improve the bond strength of a full-wafer adhesive bond with patterned BCB structures. The BCB pattern on the first wafer acts as a stamp which is 'inked' by an auxiliary wafer containing a thin layer of uncured BCB. The wafer with the 'inked' stamp is then bonded to the second wafer. Tensile strength test are carried out on patterned adhesive bonded samples with and without the contact printing method. The tests show that the contact printing technique makes the bond strength of patterned BCB stronger by a factor of at least 2.3, and the bond strength even exceeds the adhesion forces of the BCB spun onto the substrate. Furthermore, this paper presents a way of how this technique is used for 0-level glass-lid packaging by full- wafer adhesive bonding. Here, the encapsulating lids are separated after the bonding by dicing the top wafer independently of the bottom wafer.

  • Preliminary report: FPGA acceleration of molecular dynamics computations

    Molecular dynamics (MD) is of central importance to computational chemistry and its myriad applications. In this paper we show that, at even a preliminary stage of development, MD can be implemented efficiently on a COTS FPGA board, and that a 57x speed-up over a PC implementation can be obtained. We sketch our FPGA implementation and describe how performance tuning and precision management could double this factor.



Standards related to Bonding forces

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IEEE Standard Power Cable Ampacity Tables



Jobs related to Bonding forces

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