Boron

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Boron is the chemical element with atomic number 5 and the chemical symbol B. (Wikipedia.org)






Conferences related to Boron

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2023 Annual International Conference of the IEEE Engineering in Medicine & Biology Conference (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted full papers will be peer reviewed. Accepted high quality papers will be presented in oral and poster sessions,will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE.


2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges


2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

All areas of ionizing radiation detection - detectors, signal processing, analysis of results, PET development, PET results, medical imaging using ionizing radiation


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Periodicals related to Boron

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Boron

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Xplore Articles related to Boron

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Physical model for the diffusion of ion implanted boron and BF/sub 2/ during rapid thermal annealing

1992 International Technical Digest on Electron Devices Meeting, 1992

The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set ...


Coercivity enhancement of boron nitride doped Nd/sub 15/Fe/sub 77/B/sub 8/ permanent magnets

1990 IEEE International Magnetics Conference (INTERMAG), 1990

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Bimodal MOS-bipolar monolithic kitchip array

1977 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1977

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A comparative study of dopant activation in boron, BF/sub 2/, arsenic, and phosphorus implanted silicon

IEEE Transactions on Electron Devices, 2002

Ultra-low energy implants were used in combination with rapid thermal anneals in the temperature range 900/spl deg/C-1050/spl deg/C to study dopant activation in silicon. First, relatively long time anneals were performed in a conventional tungsten-based RTA to investigate the activation mechanisms. The activation was monitored using Hall measurement, where the rate of electrical activation was considered by measuring the time ...


Corrections To "Analytical Model For Threshold Voltage Shift Due To Impurity Penetration Through A Thin Gate Oxide"

IEEE Transactions on Electron Devices, 1998

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Educational Resources on Boron

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