Conferences related to Alpha Particle

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2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

This conference provides an exchange of technical topics in the fields of Solid State Modulators and Switches, Breakdown and Insulation, Compact Pulsed Power Systems, High Voltage Design, High Power Microwaves, Biological Applications, Analytical Methods and Modeling, and Accelerators.


2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Science, technology and applications spanning the millimeter-waves, terahertz and infrared spectral regions


2019 IEEE 28th Symposium on Fusion Engineering (SOFE)

fusion engineering, physics and materials, plasma heating, vacuum technology, tritium processing, fueling, first walls, blankets and divertors


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.


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Periodicals related to Alpha Particle

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer Architecture Letters

Rigorously peer-reviewed forum for publishing early, high-impact results in the areas of uni- and multiprocessors computer systems, computer architecture workload characterization, performance evaluation and simulation techniques, and power-aware computing


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Xplore Articles related to Alpha Particle

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Alpha-Particle-Based Icing Detector for Aircraft

IEEE Transactions on Instrumentation and Measurement, 2014

This paper introduces a new type of icing detector for aircraft applications. Unlike the well-known icing detectors that are based on optics, the new detector uses α particles. An α-particle source is attached to the wing of the aircraft, and a detector that mainly depends on a MOSFET transistor is placed a few centimeters away from the source. As the ...


Alpha particle emission from platinum and its influence on DRAM operation

Electronics Letters, 1993

Ferroelectrics such as SrTiO/sub 3/ have been studied as DRAM capacitor insulators. Platinum is commonly used as their electrode material. However, platinum contains the isotope Pt/sup 190/, emitting alpha particles which cause soft errors. The authors measured the alpha particle emissivity of platinum coated silicon wafers. The resultant emissivity is consistent with the calculation. The impact on DRAM operation was ...


Current flow between neighbouring trench cells triggered by alpha particle strikes

IEE Proceedings G - Circuits, Devices and Systems, 1991

The track of an alpha particle that traverses two adjacent trench-type memory cells acts as a conductive channel because of the high concentration of generated carriers so that, where the hit cells have different potential levels, a current flow is triggered which leads to an additional charge collection. The process of charge transfer between the cells owing to alpha particle ...


Numerical analysis of alpha-particle-induced soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cell

IEEE Transactions on Electron Devices, 2003

This paper clarifies alpha-particle-induced soft error mechanisms in floating channel type surrounding gate transistor (FC-SGT) DRAM cells. One FC-SGT DRAM cell consists of an FC-SGT and a three-dimensional (3-D) storage capacitor. The cell itself arranges bit line (BL), storage node and body region in a silicon pillar vertically and achieves cell area of 4F/sup 2/ (F: feature size) per bit. ...


Unified model for junction size, substrate doping, and energy dependence of /spl alpha/-particle-induced charge collection

Electronics Letters, 1996

A model for the /spl alpha/-particle-induced charge collection has been developed. By accounting for the funnelling and diffusion charges separately, our model accurately describes the junction size dependence of collected charge for a wide range of junction sizes, substrate doping levels, and /spl alpha/-particle energies.


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Educational Resources on Alpha Particle

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IEEE-USA E-Books

  • Alpha-Particle-Based Icing Detector for Aircraft

    This paper introduces a new type of icing detector for aircraft applications. Unlike the well-known icing detectors that are based on optics, the new detector uses α particles. An α-particle source is attached to the wing of the aircraft, and a detector that mainly depends on a MOSFET transistor is placed a few centimeters away from the source. As the α particles strike the detector, they deposit their positive charges on the gate of the MOSFET (n-channel), and the transistor turns ON. If, however, a layer of ice builds up on the wing and prevents the α particles from reaching the detector, the MOSFET shuts OFF. The new detector is more reliable than optics-based detectors because it is an integral part of the wing and hence cannot miss the formation of ice.

  • Alpha particle emission from platinum and its influence on DRAM operation

    Ferroelectrics such as SrTiO/sub 3/ have been studied as DRAM capacitor insulators. Platinum is commonly used as their electrode material. However, platinum contains the isotope Pt/sup 190/, emitting alpha particles which cause soft errors. The authors measured the alpha particle emissivity of platinum coated silicon wafers. The resultant emissivity is consistent with the calculation. The impact on DRAM operation was estimated.<<ETX>>

  • Current flow between neighbouring trench cells triggered by alpha particle strikes

    The track of an alpha particle that traverses two adjacent trench-type memory cells acts as a conductive channel because of the high concentration of generated carriers so that, where the hit cells have different potential levels, a current flow is triggered which leads to an additional charge collection. The process of charge transfer between the cells owing to alpha particle striking is described by an equivalent circuit, which allows rapid calculation of the current through the parasitic channel, taking into account the total angle and energy spectrum of alpha particle radiation. It is found that the collected charge is appreciably increased only when the trench distance is comparable to the width of the p-n spacecharge region of the cell at high-level potential and when the alpha particle tracks run approximately parallel to the semiconductor surface.<<ETX>>

  • Numerical analysis of alpha-particle-induced soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cell

    This paper clarifies alpha-particle-induced soft error mechanisms in floating channel type surrounding gate transistor (FC-SGT) DRAM cells. One FC-SGT DRAM cell consists of an FC-SGT and a three-dimensional (3-D) storage capacitor. The cell itself arranges bit line (BL), storage node and body region in a silicon pillar vertically and achieves cell area of 4F/sup 2/ (F: feature size) per bit. In FC-SGT DRAM cells, the parasitic bipolar current is a major factor to cause soft errors. When an alpha particle penetrates the silicon pillar, generated electrons are collected to the storage node or BL due to the tunneling and diffusion mechanisms. On the other hand, holes are swept into the body region and accumulated. Consequently, the current flows not only in the surface but also in the entire body region due to the floating body effect. This parasitic bipolar current becomes the largest when an alpha particle penetrates the silicon pillar along the vertical axis. However, in case of FC-SGT DRAM cells, the surrounding gate structure can suppress the floating body effect compared with floating channel type SOI DRAM cells. As a result, the loss of the stored charge in the storage capacitor can be drastically decreased by using FC-SGT DRAM cell. Therefore, FC-SGT DRAM is a promising candidate for future high-density DRAMs having high soft-error immunity.

  • Unified model for junction size, substrate doping, and energy dependence of /spl alpha/-particle-induced charge collection

    A model for the /spl alpha/-particle-induced charge collection has been developed. By accounting for the funnelling and diffusion charges separately, our model accurately describes the junction size dependence of collected charge for a wide range of junction sizes, substrate doping levels, and /spl alpha/-particle energies.

  • Superconducting Transition-Edge Sensor Microcalorimeters for Ultra-High Resolution Alpha-Particle Spectrometry

    Alpha-particle spectrometry is a powerful analytical tool for nuclear forensics and environmental monitoring. Superconducting transition-edge sensor microcalorimeters have been shown to yield unsurpassed energy resolution for alpha spectrometry. With nearly an order of magnitude better energy resolution (1.06 keV FWHM at 5.3 MeV) than the current state-of-the-art silicon detectors (8-10 keV at 5.3 MeV), it is possible to measure samples containing multiple radioisotopes that would require expensive and time-consuming radiochemical separation prior to measurement with a silicon detector. This paper presents recent results from the Los Alamos four-channel microcalorimeter alpha spectrometer. We have prepared a source from weapons-grade plutonium and demonstrated the ability of microcalorimeter alpha spectrometry to simultaneously resolve alpha energies from <sup>239</sup>Pu, <sup>240</sup>Pu, <sup>238</sup>Pu, and <sup>241</sup>Am. The low-energy performance of the spectrometer system has been improved to allow measurement of energies as low as 5 keV, which gives a dynamic range of 1000. We have demonstrated this capability by simultaneously measuring the alpha particles and low-energy x-rays and internal conversion electrons emitted by an electroplated <sup>240</sup>Pu source.

  • Prediction of Alpha Particle Effect on 5-nm Vertical Field-Effect Transistors

    The radiation effect on a nanoplate vertical field-effect transistor (VFET) was analyzed in a 5-nm technology node by simulating alpha particle-based 3-D TCAD, and it was compared to the effect on a FinFET on 5-nm technology node. Due to structural differences between FinFET and VFET, a change in the drain current over time is different after the injection of particles. In addition, there are two sections where the radiation effect decreases and increases depending on the particle energy. As the particle energy increases, the region where the peak value of the electron-hole pair (EHP) is generated is gradually moving away from the drain region and the amount of EHP generation in the p-n junction region decreases. In addition, as the temperature increases, the radiation effect decreases due to the reduced mobility and increased recombination rate. VFETs are more vulnerable to radiation because they have a larger drain area than FinFETs, which can reduce the radiation effect in half by using the drain top structures in VFETs.

  • Gamma quantum and alpha particle counters based on GaAs detectors

    In the paper, results of development and preliminary tests for counters of the gamma quantum and /spl alpha/-particles using the detectors on GaAs, compensated by Cr are presented. It is shown that GaAs detectors allows to create high-speed and selective ionizing radiation counters. It is founded that radiating stability of GaAs detectors exceeds 5 MRad and 50 MRad at irradiation by protons (E/sub p/ = 1GeV) and gamma quantums (E/sub /spl gamma//= 1MeV), accordingly.

  • Alpha particle induced single-event error rates and scaling trends in commercial SRAM cells

    Alpha particles are a critical reliability problem facing advanced technologies. This paper reports extensive tests over a wide range of technology nodes on CMOS SRAMs to study operating voltage, data pattern, operating frequency and operational-mode dependency of alpha particle induced single-event upsets rates.

  • A CMOS integrated pulse mode alpha-particle counter for application in radon monitoring

    A custom integrated circuit for detecting alpha particles for application in the monitoring of radon has been designed and tested. The design uses the reverse-biased well to substrate capacitance of a p-n junction in a conventional CMOS process as a sense capacitor for incident alpha particles, A simple CMOS inverter is used as an analog amplifier to detect the small potential change induced by an alpha-particle strike on the sense capacitor. The design was implemented in a 1.2-/spl mu/m conventional CMOS process with a sense capacitor area of 110 /spl mu/m/sup 2/. Tests carried out under vacuum conditions using a calibrated /sup 241/Am alpha-particle source showed an output voltage swing of /spl ges/2.0 V for an alpha event. The detector is also shown to have good immunity to noise and high-quantum efficiency for alpha particles.




Jobs related to Alpha Particle

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