Conferences related to Transistors

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2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. The conference addresses issues of immediate and long term importance to practicing power electronics engineer.


2019 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.


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Periodicals related to Transistors

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems Magazine, IEEE


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Transistors

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Xplore Articles related to Transistors

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Developments in integrated circuits and transistors for millimetre wave systems

IEE Colloquium on Millimetre Wave Transistors and Circuits, 1991

The author presents an overview of developments in millimetre wave integrated circuits and transistors for both military and commercial systems. Many transistor structures are available in many semiconductor material systems; metal semiconductor field effect transistors, modulation doped field effect transistors, heterojunction bipolar transistors, metal insulator semiconductor field effect transistors, permeable base transistors, resonant tunneling hot electron transistors etc. However, the ...


Highly Sensitive Low Power Ion-sensitive Organic Thin-Film Transistors

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018

Low-voltage printable organic thin-film transistors with steep subthreshold swing were demonstrated and proposed to incorporate into ion-sensitive organic thin-film transistors (ISOTFTs). The resulting ISOTFTs demonstrated high pH sensitivity but very low power consumption.


Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018

We report a novel method for fabricating solution-processed quaternary In-Ga- Zn-O (IGZO) thin-film transistors (TFTs) at low annealing temperature. The method is to spin coat such binary oxide layers as Ga2O3, ZnO and In2O3 consecutively and then anneal the layers at 250 °C . Finally, due to vertical diffusion of the binary oxides, the IGZO film with a vertically gradient ...


IEE Colloquium on 'Millimetre Wave Transistors and Circuits' (Digest No.068)

IEE Colloquium on Millimetre Wave Transistors and Circuits, 1991

None


Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance

2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT), 2018

Bottom-gate InSnZnO (ITZO) thin film transistors (TFTs) with back channels modified by self-assembled monolayer (SAM) as passivation layer were proposed and fabricated. The SAM were prepared by vapor-phase deposition method based on the triethoxyoctylsilane (OTES). For the SAM with OTES, a well-ordered and highly hydrophobic monolayer and the excellent performance of the ITZO TFT are achieved.


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Educational Resources on Transistors

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IEEE-USA E-Books

  • Developments in integrated circuits and transistors for millimetre wave systems

    The author presents an overview of developments in millimetre wave integrated circuits and transistors for both military and commercial systems. Many transistor structures are available in many semiconductor material systems; metal semiconductor field effect transistors, modulation doped field effect transistors, heterojunction bipolar transistors, metal insulator semiconductor field effect transistors, permeable base transistors, resonant tunneling hot electron transistors etc. However, the first three types are the most important and, using them selectively, it is possible to obtain low noise temperatures, 'power' amplification, oscillators with low phase noise, and high integration. The author discusses these topics and provides various graphs to illustrate some of the points raised.<<ETX>>

  • Highly Sensitive Low Power Ion-sensitive Organic Thin-Film Transistors

    Low-voltage printable organic thin-film transistors with steep subthreshold swing were demonstrated and proposed to incorporate into ion-sensitive organic thin-film transistors (ISOTFTs). The resulting ISOTFTs demonstrated high pH sensitivity but very low power consumption.

  • Low-Temperature Fabrication of Solution-Processed InGaZnO Thin-Film Transistors

    We report a novel method for fabricating solution-processed quaternary In-Ga- Zn-O (IGZO) thin-film transistors (TFTs) at low annealing temperature. The method is to spin coat such binary oxide layers as Ga2O3, ZnO and In2O3 consecutively and then anneal the layers at 250 °C . Finally, due to vertical diffusion of the binary oxides, the IGZO film with a vertically gradient In, Ga, Zn distribution (defined as vd-IGZO) is obtained and used as the channel layer of TFT. Compared with conventional IGZO (con-IGZO) TFTs annealing at 380°C, the vd-IGZO TFTs have better electrical performances.

  • IEE Colloquium on 'Millimetre Wave Transistors and Circuits' (Digest No.068)

    None

  • Vapor-phase self-assembled monolayer on InSnZnO Thin-Film Transistors for enhanced performance

    Bottom-gate InSnZnO (ITZO) thin film transistors (TFTs) with back channels modified by self-assembled monolayer (SAM) as passivation layer were proposed and fabricated. The SAM were prepared by vapor-phase deposition method based on the triethoxyoctylsilane (OTES). For the SAM with OTES, a well-ordered and highly hydrophobic monolayer and the excellent performance of the ITZO TFT are achieved.

  • Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors Under AC Bias Stress

    Stability of conventional and elevated-metal metal-oxide (EMMO) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under AC bias stress is investigated. Superior stability of the EMMO TFTs is observed and attributed to the reduced deep acceptor-like trap states.

  • Influences of Organic Passivation on performance of Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

    Science the first report of indium-gallium-zinc-oxide (a-IGZO) thin-film transistors, it had attracted numerous researchers to explore this new materials [1] . For practical applications, it is critical to gain a stable devices and passivation process could give raise to improvement of stabilities [2] , [3] . In this paper, we investigated the influence of organic passivation layer, parylene, on performance and stability of amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors. The results showed that after deposition of parylene for passivation layer, the subthreshold swing (SS) was reduced as illustrated in Fig. 2 . Besides, we also test the device stability under positive gate bias stress. During PBS, source and drain electrodes are grounded with gate voltage is 15V. Before voltage stress, threshold voltage is obtained by transfer curve in linear region as a reference. And after a specific time scale, the transfer curve was tested again. The obtained threshold voltage evolution with stressed time was shown in Fig. 3 . The improved performance and stability of devices can be contributed to the reduction of trap density in back channel from environment [4] . By capping a passivation layer, the factors such as moisture and oxygen can be excluded from active layer. Usually those molecules working as defect destroy the device performances. This enhanced performance implied parylene- passivated a-IGZO thin-film transistors could be used in the future application of flexible displays.

  • Analytical Drain Current Model for Amorphous and Polycrystalline Silicon Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

    Our previous drain current model for the organic and amorphous InGaZnO thin- film transistors is applied to the amorphous and polycrystalline silicon thin- film transistors. In the drain current model, it is assumed that the trapped carrier concentration is much higher than the free carrier concentration considering both deep trap states and tail trap states in the energy gap of the thin film. The model is valid in both subthreshold and above-threshold regime, and is verified by the available experimental data at different temperatures.

  • Photoresponse of microwave transistors to high-frequency modulated lightwave carrier signal

    Described in this paper are the photoresponse characteristics of microwave transistors, both unipolar [metal-semiconductor FETs (MESFETs) and modulation- doped FETs (MODFETs)] and bipolar [heterojunction bipolar transistors (HBTs)]. Investigation includes time- and frequency-domain measurements. For unipolar device FETs, the two dominant photodetection mechanisms, photoconductive and photovoltaic, are clearly identified within the same device for the first time. It is shown that even high-speed FETs are limited to a photonic bandwidth of a few megahertz, if photodetection and amplification are to be achieved simultaneously. In contrast, bipolar HBTs can provide optical gain up to the millimeter-wave range. It is shown that their bandwidth to a modulated optical input is closely related to the microwave bandwidth, and that parameters such as base-access resistance and base-emitter capacitance are critical to photoresponse optimization.

  • Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

    It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.



Standards related to Transistors

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IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials

This standard describes a method for characterizing organic electronic devices, including measurement techniques, methods of reporting data, and the testing conditions during characterization.


Standard for Test Methods for the Characterization of Organic Transistor-Based Ring Oscillators

This is a full-use standard that specifies methods for the characterization of organic transistor-based ring oscillators. The methods are applicable to all ring oscillators fabricated from organic semiconductor materials and are independent of the fabrication process.