Conferences related to Alpha-particle Effects

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2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2019 IEEE 28th Symposium on Fusion Engineering (SOFE)

fusion engineering, physics and materials, plasma heating, vacuum technology, tritium processing, fueling, first walls, blankets and divertors


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE International Reliability Physics Symposium (IRPS)

Meeting of academia and research professionals to discuss reliability challenges.


2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

This conference is the annual premier meeting on the use of instrumentation in the Nuclear and Medical fields. The meeting has a very long history of providing an exciting venue for scientists to present their latest advances, exchange ideas, renew existing collaboration and form new ones. The NSS portion of the conference is an ideal forum for scientists and engineers in the field of Nuclear Science, radiation instrumentation, software engineering and data acquisition. The MIC is one of the most informative venues on the state-of-the art use of physics, engineering, and mathematics in Nuclear Medicine and related imaging modalities, such as CT and increasingly so MRI, through the development of hybrid devices


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Periodicals related to Alpha-particle Effects

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Alpha-particle Effects

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Xplore Articles related to Alpha-particle Effects

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Observation of Alpha Particle Effects in the Charge-Coupled Image Sensor

IEEE Transactions on Nuclear Science, 1980

Alpha particle effects in the charge-coupled (CCD) image sensor were evaluated by using Am-241, Th, and Po-210 radiation sources. Soft error rate due to alpha particle hit was dependent upon alpha energy spectrum and on integration time and photogate bias of the device. The device was operated at frequencies between 200 kHz and 1 MHz during the irradiation and was ...


The effect of Radon on soft error rates for wire bonded memories

2010 IEEE International Integrated Reliability Workshop Final Report, 2010

Soft errors caused by different high energetic radiation particles, such as alpha, neutron, thermal neutron, proton, and heavy ions are well studied and understood. But few studies have been complete on effect of Radon on IC components soft error. Complicating matters, Radon a naturally occurring radioactive gas could diffuse into and through the different IC package materials and emit alpha ...


Microbeam analysis of MOS circuits

RADECS 91 First European Conference on Radiation and its Effects on Devices and Systems, 1991

Irradiation of MOS SRAMs by energetic heavy ions results in pulses on the power lines of the device. Pulse-height analysis shows a series of peaks when the irradiation consists of identical particles incident in the same direction. Analysis through a microbeam shows that the pulses are generated by traversals of the p-n junctions making up the transistors of the device. ...


SOI SRAM design advances & considerations

9th International Conference on Electronics, Circuits and Systems, 2002

SOI is a relatively new introduction in memory design and its use can improve performance. Bit-line capacitance and pass gate loads are major sources of current discharge in SOI SRAM cells. Currents from bit line capacitance and cell leakage can corrupt the cell data. SOI improves the soft error rate due to Alpha particles, mainly because of the presence of ...


Properties of Josephson tunnel junction with trapped Abrikosov vortices: physical aspects and application for registration of alpha-particles

IEEE Transactions on Magnetics, 1991

Properties of the Nb/AlO/sub x//Nb Josephson tunnel junction (JTJ) with Abrikosov vortices (AVs) trapped in electrodes were investigated. The trapping of AVs is performed by a field-cooling process when the JTJ is cooled through the critical temperature T/sub c/ either in applied perpendicular magnetic field (B/sub perpendicular to /) (mode 1) or by application of the perpendicular magnetic field B/sub ...


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Educational Resources on Alpha-particle Effects

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IEEE.tv Videos

Applications of Superconductivity in the Detection of Axions - Applied Superconductivity Conference 2018
Superconducting RF Cavities and Future Particle Accelerators - Applied Superconductivity Conference 2018
IMS 2011 Microapps - Memory Effects in RF Circuits: Definition, Manifestations and Fast, Accurate Simulation
IMS 2012 Microapps - Reducing Active Device Temperature Rise and RF Heating Effects with High Thermal Conductivity Low Loss Circuit Laminates
IMS MicroApp: Unexpected effects of conductor profile on the propagation constant
Building the Middle East's First Synchrotron
Panel 1: Critical Modeling Aspects & Effects on System Design & Performance - Brooklyn 5G 2015
The Josephson Effect: The Observations of Josephson's Effects
Micro-Apps 2013: Rapid Simulation of Large Phased Array T/R Module Networks
New Results from the G2 Axion Dark Matter Experiment - Applied Superconductivity Conference 2018
BSIM Spice Model Enables FinFET and UTB IC Design
IEEE Magnetics Distinguished Lecture - Yoshichika Otani
26th Annual MTT-AP Symposium and Mini Show - Ken Kenjale
IEEE-HKN presents: Engineering - A Career for Tomorrow
Ignite! Session: Bill Moses
Microwave PCB Structure Selection Microstrip vs. Grounded Coplanar Waveguide: MicroApps 2015 - Rogers Corporation
IEEE Sections Congress 2011 Opening Ceremony
How to Optimize the Performance of Your RF Layout: MicroApps 2015 - Keysight Technologies
Spiking Network Algorithms for Scientific Computing - William Severa: 2016 International Conference on Rebooting Computing
Anticipating Human Activities for Reactive Robotic Response

IEEE-USA E-Books

  • Observation of Alpha Particle Effects in the Charge-Coupled Image Sensor

    Alpha particle effects in the charge-coupled (CCD) image sensor were evaluated by using Am-241, Th, and Po-210 radiation sources. Soft error rate due to alpha particle hit was dependent upon alpha energy spectrum and on integration time and photogate bias of the device. The device was operated at frequencies between 200 kHz and 1 MHz during the irradiation and was found to have no effect on the soft error rate. A charge collection efficiency of 64% was observed as the device was exposed to a 4.2-MeV alpha. Material-asssociated characteristics such as diffusion length and lifetime of the minority carrier were calculated from the outcome of the charge collection efficiency. More than two orders of magnitude in increase of dark signal and charge transfer loss were observed as the device was subjected to a total radiation exposure of 105 rads (Si). The device degradation is due mainly to the threshold voltage shift and lattice defects.

  • The effect of Radon on soft error rates for wire bonded memories

    Soft errors caused by different high energetic radiation particles, such as alpha, neutron, thermal neutron, proton, and heavy ions are well studied and understood. But few studies have been complete on effect of Radon on IC components soft error. Complicating matters, Radon a naturally occurring radioactive gas could diffuse into and through the different IC package materials and emit alpha particles as the gas atom and its progeny decay. While the diffusion constant and solubility of Radon in these materials are not well known, these decays could cause soft errors if they occur in regions near sensitive component nodes. Furthermore, different geographic location has different concentration of Radon. If Radon contributes to IC components soft error, its affect should be quantified. This paper reports the soft error test result in an accelerated Radon ambient and concludes Radon impact on soft errors.

  • Microbeam analysis of MOS circuits

    Irradiation of MOS SRAMs by energetic heavy ions results in pulses on the power lines of the device. Pulse-height analysis shows a series of peaks when the irradiation consists of identical particles incident in the same direction. Analysis through a microbeam shows that the pulses are generated by traversals of the p-n junctions making up the transistors of the device. Junctions in the memory array were found to dominate the spectrum from a CMOS device while those of the support circuitry dominate the spectrum from a DRAM.<<ETX>>

  • SOI SRAM design advances &amp;amp; considerations

    SOI is a relatively new introduction in memory design and its use can improve performance. Bit-line capacitance and pass gate loads are major sources of current discharge in SOI SRAM cells. Currents from bit line capacitance and cell leakage can corrupt the cell data. SOI improves the soft error rate due to Alpha particles, mainly because of the presence of buried oxide. This paper is a brief tutorial on SOI SRAM design issues, leakages and soft error rates.

  • Properties of Josephson tunnel junction with trapped Abrikosov vortices: physical aspects and application for registration of alpha-particles

    Properties of the Nb/AlO/sub x//Nb Josephson tunnel junction (JTJ) with Abrikosov vortices (AVs) trapped in electrodes were investigated. The trapping of AVs is performed by a field-cooling process when the JTJ is cooled through the critical temperature T/sub c/ either in applied perpendicular magnetic field (B/sub perpendicular to /) (mode 1) or by application of the perpendicular magnetic field B/sub perpendicular to / when the JTJ is at the temperature below T/sub c/ (mode 2). The effect of AVs on dependences of Josephson critical supercurrent I/sub c/ in the parallel magnetic field B/sub /// is studied. It is found that distortion in I/sub c/-versus-B/sub /// curves in the case of mode 1 differ qualitatively from that in the case of mode 2. These differences can be trapped in electrodes of the JTJ. The influence of alpha -particles on AVs trapped in electrodes of the JTJ is investigated. The results can be explained by the single AV motion caused by alpha -particles. It is believed that the JTJ with trapped AVs could be used as a new type of detector of nuclear particles.

  • Properties of fiber optical materials after exposure to nuclear radiation

    The theoretically expected effects on fiber optical measuring samples, after exposure to nuclear radiation, such as /spl alpha/, /spl beta/, /spl gamma/ and flux of neutrons, were analyzed. Different optical fibers were tested: each of them was made of various materials and had different origin. Infrared (IR) spectra of these optical fibers, and their junctions (made by splicer), mere obtained before the exposure and after the exposure to nuclear radiation. The mechanical characteristics were measured too. The obtained results were used in the setting procedure of fiber optical characteristic.

  • Modeling and Control of Alpha-Particle Effects in Scaled-Down VLSI Circuits

    None

  • Alpha particle effects on bipolar ECL static arrays

    This paper will discuss results obtained between experimental studies and circuit simulation of the soft error rates versus critical charge in static bipolar ECL memory arrays. Design optimization and process innovation was used to achieve failure rates below 0.1 fails/bit/Khr with critical charge exceeding 300fC.

  • The characteristics of alpha particle effects on 64K CCD's

    The sensitivity of commercially available 64K CCD devices to &#945; particles has undergone a systematic study. The circuit and methods employed for the study are described. The variations of sensitivity with &#945; flux, &#945; energy, circuit frequency, circuit voltage, and data pattern is presented. Data is also discussed relating to the variation from device to device.

  • Large area thin film semiconductor detectors using multichannel counting Castor readout chip

    The performance of charged particle counters associating thin diamond or amorphous silicon (a-Si) detectors to Castor VLSI analog-digital circuits for the fabrication of large area detectors are reported. The 20 /spl mu/m thick semiconductor detectors were synthesised using the chemical vapour deposition (CVD) technique. Detectors of 2.5/spl times/2.5 cm/sup 2/ area were segmented in 32 sub-areas of 13 mm/sup 2/ in order to limit the electronic noise per reading channel. The 32 channel circuit was used to record the counting rate and the total number of counts on each segment. Such detection systems were tested under alpha particles (/sup 241/Am) as well as under low energy beta particles (/sup 14/C). The results show that large area detection systems can readily be fabricated at low cost by the association of an application specific readout chip (ASIC) with chemically vapour deposited semiconductor detectors.



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