IEEE Organizations related to Nickel Compounds

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Conferences related to Nickel Compounds

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2020 IEEE 70th Electronic Components and Technology Conference (ECTC)

ECTC is the premier international conference sponsored by the IEEE Components, Packaging and Manufacturing Society. ECTC paper comprise a wide spectrum of topics, including 3D packaging, electronic components, materials, assembly, interconnections, device and system packaging, optoelectronics, reliability, and simulation.


2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science andtechnology research development and applications. The list of program topics includes but isnot limited to: Measurement Science & Education, Measurement Systems, Measurement DataAcquisition, Measurements of Physical Quantities, and Measurement Applications.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2020 IEEE Photovoltaic Specialists Conference (PVSC)

Promote science and engineering of photovoltaic materials, devices, systems and applications


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Periodicals related to Nickel Compounds

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Most published Xplore authors for Nickel Compounds

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Xplore Articles related to Nickel Compounds

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Microstructure evolution in microbumps for 3D-IC packaging

2010 5th International Microsystems Packaging Assembly and Circuits Technology Conference, 2010

In this study, we would analyzed the solid state reaction between Sn2.5Ag solder bump and Cu/Ni under-bump-metallization (UBM). After 150°C thermal aging, we observed that the intermetallic compounds (IMCs) at chip side and interposer side both were Ni3Sn4IMCs. It indicated that the solder did not react with Cu and the Cu layer was completed. As thermal aging time increased, the ...


NiSi MOCVD for fabricating FinFETs and UTB-SOI devices

2003 IEEE International Conference on SOI, 2003

We investigated the use of NiSi MOCVD for fabricating FinFETs and UTB-SOI devices. MeCp/sub 2/Ni was synthesized as a Ni precursor. The NiSi film deposited using MeCp/sub 2/Ni and Si/sub 3/H/sub 6/ had a smooth interface with the Si substrate without Ni penetration. The step coverage of the deposited film on a patterned substrate was excellent.


Field-effect transistor with diphthalocyanine thin film

Electronics Letters, 1988

A field effect transistor has been fabricated with organic semiconductors: scandium diphthalocyanine and nickel phthalocyanine. The electrical characteristics are studied in air atmosphere. The influence of the diphthalocyanine film thickness has been detected.<>


Submicron thin-film MOM diodes for the detection of 10 mu m infrared laser radiation

1990 Fourth International Conference onAdvanced Infrared Detectors and Systems, 1990

The authors report on the manufacture and characterization of thin-film Ni- NiO-Ni tunnel diodes for the detection of 10 mu m CO/sub 2/ laser radiation. The results are compared with previous studies.<>


Fabrication of device for detecting gases using conductivity changes of electrodeposited Bu/sub 4/NNi(dmit)/sub 2/ thin films

Electronics Letters, 1995

The fabrication and development of a thin film solid state device for the room temperature detection of sulphur dioxide and nitric oxide is described. Thin films of Bu/sub 4/NNi(dmit)/sub 2/ were electrodeposited onto a gold interdigitated electrode system and changes in the electrical resistances of the films on exposure to the test gases were monitored. The absorption kinetics followed the ...


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Educational Resources on Nickel Compounds

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IEEE-USA E-Books

  • Microstructure evolution in microbumps for 3D-IC packaging

    In this study, we would analyzed the solid state reaction between Sn2.5Ag solder bump and Cu/Ni under-bump-metallization (UBM). After 150°C thermal aging, we observed that the intermetallic compounds (IMCs) at chip side and interposer side both were Ni3Sn4IMCs. It indicated that the solder did not react with Cu and the Cu layer was completed. As thermal aging time increased, the thickness of Ni3Sn4IMCs and the Ag3Sn grain size increased. In addition, the dispersed Ag3Sn compound would aggregate to form plated Ag3Sn compound as the thermal aging time increased. The growth kinetics of Ni3Sn4was volume diffusion (n=0.5) domination the diffusion process of Sn and Ni atoms. We calculated the Ni3Sn4IMCs growth rate constant was 0.067 μm/hr½at 150°C aging. As the aging time increased, the concentration of Ag in the remaining solder bumps also increased. When the concentration of Ag was over 3.5 wt.%, the probability of plate-like Ag3Sn compound appeared in the solder bumps would increased. We used the Ni3Sn4IMCs growth rate constant to define the critical volume of Sn2.5Ag solder was 1621.0 μm3. If the volume of the Sn2.5Ag microbumps were below the critical volume, the concentration of Ag in the remaining solder would over 3.5 wt.%, and the plate-like Ag3Sn would appear in the remaining solder after 1000-hr thermal aging at 150°C.

  • NiSi MOCVD for fabricating FinFETs and UTB-SOI devices

    We investigated the use of NiSi MOCVD for fabricating FinFETs and UTB-SOI devices. MeCp/sub 2/Ni was synthesized as a Ni precursor. The NiSi film deposited using MeCp/sub 2/Ni and Si/sub 3/H/sub 6/ had a smooth interface with the Si substrate without Ni penetration. The step coverage of the deposited film on a patterned substrate was excellent.

  • Field-effect transistor with diphthalocyanine thin film

    A field effect transistor has been fabricated with organic semiconductors: scandium diphthalocyanine and nickel phthalocyanine. The electrical characteristics are studied in air atmosphere. The influence of the diphthalocyanine film thickness has been detected.<>

  • Submicron thin-film MOM diodes for the detection of 10 mu m infrared laser radiation

    The authors report on the manufacture and characterization of thin-film Ni- NiO-Ni tunnel diodes for the detection of 10 mu m CO/sub 2/ laser radiation. The results are compared with previous studies.<>

  • Fabrication of device for detecting gases using conductivity changes of electrodeposited Bu/sub 4/NNi(dmit)/sub 2/ thin films

    The fabrication and development of a thin film solid state device for the room temperature detection of sulphur dioxide and nitric oxide is described. Thin films of Bu/sub 4/NNi(dmit)/sub 2/ were electrodeposited onto a gold interdigitated electrode system and changes in the electrical resistances of the films on exposure to the test gases were monitored. The absorption kinetics followed the Elovich isotherm.<>

  • Joint strength and microstructures of brazed joints of stainless steel with Fe-based filler

    For thermal conversion parts of electrical equipment which are required high corrosion resistance, stainless steel is often used. The joining of such materials is generally conducted with brazing with Ni-based filler. Since Ni is a rare and high-cost material, the substitute filler material which is low- Ni or Ni-free is expected to be developed. Fe-based filler has been developed as one candidate. In this study, joint strength and the microstructure of stainless steel type 304 brazed joint with Fe-based filler were investigated. As the results, it was clarified that shear strength of the joint with Fe- based filler is the almost same level as that with conventional Ni-based filler. Moreover, the effect of joint clearance on the joint strength and the microstructure was also investigated. When joint clearance is more than 50 μm, the final solidified area which consists of Fe-Cr-Ni-Si phases and P-rich phases forms in the center of the brazed joint. The formation of P-rich phases causes the joint strength reduction.

  • Lundberg's Inequality of Erlang(2) Perturbed Risk Model in Markovian Environment

    A famous problem in nonlife actuarial field is considered in this paper. We extend Erlang(2) perturbed risk model to a Markov dependent model in which the inter-claim time, the claim amount, the premium rate and the volatility of the diffusion process are all regulated by a continuous-time Markov process. By the means of the martingale approach, we obtain an upper bound of the ruin probability of our model, described as the Lundberg's inequality, and derive a representation for the corresponding adjustment coefficient.

  • Nanopowder hydrogenation catalysts of diesel fraction components

    A new approach to manufacturing catalytic hydrotreating systems is described, which is implemented through a mechano-chemical activation of a mixture consisting of macrocrystalline molybdenum disulfide and 3d-metal nanopowders obtained by electrophysical methods. The results of investigation of new catalyst systems reactivity are reported.

  • Optical and transport properties of Ni-doped MoS2

    In this paper, undoped and Ni-doped MoS2 crystal layers were fabricated by chemical vapor transport method. Two direct band edge transitions of excitons at 1.9 and 2.1 eV were observed for both samples by optical reflectance measurement. Hall effect measurements were carried out to analyze the transport behavior of carriers in undoped and Ni-doped MoS2, which indicate that the Ni-doped MoS2 sample is n-type and has a higher resistance and lower mobility than the undoped MoS2 sample has. Photoconductivity was performed which shows Ni-doped MoS2 has higher photocurrent than undoped MoS2. Meanwhile, an additional Ni doping level at 1.2 eV was observed in Ni-doped MoS2. According to a series of experimental results, this result indicates that the Ni dopants could improve their applications in light responsibility for solar cells and photo detectors.

  • Electric Contact Resistance of Conductive Coatings on Aluminum

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