Zinc oxide

View this topic in
Zinc oxide is an inorganic compound with the formula ZnO. (Wikipedia.org)






Conferences related to Zinc oxide

Back to Top

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)

Covers all electronic materials and devices fields that involve nanotechnology

  • 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC)

    This conference serves as a perfect platform on which scientists and engineers can present and highlight some of the key advances in the research topics relevant to nanoscience and nanotechnology.

  • 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE NMDC 2016 aims to foster communication between physicists, chemists, microbiologists and engineers from academics and industry, interested in nanodevices and nanostructured materials, advanced preparation techniques, new material properties, standards and safety issues of nanotechnology, in computer simulations and theoretical work. Interdisciplinary exchange between scientists and contributions from industrial researchers will stimulate gather knowledge and help inspire a new perspective in industrial applications on this exciting area.

  • 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2015 is the 10th Nanotechnology Materials and Devices Conference. Published papers in the conference will be indexed at IEEExplore. A contest for the best paper award will be held and awards will be given at the end of the conference. Authors of the best papers of each track will be invited to submit their extended article version to: IEEE Transactions on Nanobioscience, IEEE Nanotechnology Magazine, and IEEE Transaction on Nanotechnology.

  • 2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC)

    IEEE-NMDC 2014 wants to be a forum of discussion about nanotechnology, with a special focus on materials and devices. Topics:-Graphene and carbon nanotubes based materials and devices-Materials and devices for nanoelectronics-Materials and devices for energy and environmental applications-Nanostructures for future generation solar cells-Ion beam synthesis and modification of nanostructures-Advanced characterization of nanomaterials and nanostructures-Modeling and simulation of nanomaterials, structures, and devices-Metamaterials and plasmonic devices-Photonic materials and devices-Organic semiconductor materials, devices and applications-Nanostructures of oxide semiconductor materials-III-V semiconductors nanomaterials-Nanostructures for water purification-Nanomaterials and devices for biomedical applications-Standards and safety issues of nanotechnology-Fundamentals and applications of nanotubes, nanowires, quantum dots and other low dimensional materials

  • 2013 IEEE 8th Nanotechnology Materials and Devices Conference (NMDC)

  • 2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

    Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2008 2nd Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2006 Nanotechnology Materials and Devices Conference (NMDC)


2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

Nanotechnology

  • 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

    IEEE Nano is one of the largest nanotechnology conferences in the world, directly sponsored by the IEEE Nanotechnology Council. IEEE NANO 2017 will provide an international forum for inspiration, interactions and exchange of ideas in a wide variety of branches of nanotechnology and nanoscience, through feature tutorials, workshops, and track sessions; plenary and invited talks from the world most renowned scientists and engineers; exhibition of software, hardware, equipment, materials, services and literature. It is a must for students, educators, researchers, scientists and engineers engaged in a wide range of nanotechnology fields and related applications, including electronic materials, photonics, biotechnology, medicine, alternative energy, environment and electronic devices.

  • 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

    IEEE-NANO is the flagship IEEE Nanotechnology conference. The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope is to bring together researchers, industry workers, entrepreneurs and funding agency leaders, in the general area of nanotechnology. IEEE NANO 2015 will provide a forum for the exchange of ideas, interaction, networking and collaboration for research and development in nanotechnology with special attention to the latest advances in nanotechnology

  • 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO)

    NANO is the flagship IEEE conference in Nanotechnology, which makes it a must for students, educators, researchers, scientists and engineers alike, working at the interface of nanotechnology and the many fields of electronic materials, photonics, bio-and medical devices, alternative energy, environmental protection, and multiple areas of current and future electrical and electronic applications. In each of these areas, NANO is the conference where practitioners will see nanotechnologies at work in both their own and related fields, from basic research and theory to industrial applications.

  • 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO)

    Nanoelectronics, nanomanufacturing, nanomaterials, nanodevice, nanofibration, nanofluidics, nano-bio-medicine, NEMS applications, nanocircuits, nanorobotics, nanomanipulation, nanosensors and actuators, nanophotonics, nanomagnetics, micro-to-nano-scale bridging

  • 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2011 10th Conference on Nanotechnology (IEEE-NANO)

    1. Nanomaterials and Nanostructures 2. Nanoelectronics and Nanodevices 3. Nanophotonics 4. Nano biotechnology and Nanomedicine 5. Nanorobotics and NEMS

  • 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO)

    All areas of nanotechnology within the areas of IEEE interest, as covered by the member societies of the Nanotechnology Council.

  • 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO)

    - More Moore, More than Moore and Beyond-CMOS - Nano-optics, Nano-Photonics, Plasmonics, Nano-optoelectronics - Nanofabrication, Nanolithography, Nano Manipulation, Nanotools - Nanomaterials and Nanostructures - Nanocarbon, Nanodiamond, Graphene and CNT Based Technologies - Nano-sensors and Nano Membranes - Modeling and Simulation - System Integration (Nano/Micro/Macro), NEMS, and Actuators - Molecular Electronics, Inorganic Nanowires, Nanocrystals, Quantum Dots

  • 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO)

    THE CONFERENCE FOCUSES ON THE APPLICATION OF NANOSCIENCE AND NANOTECHNOLOGY. SPECIFICALLY, BOTH ENGINEERING ISSUE RELATED TO NANOFABBRICATION , NANOELECTRONICS, SENSOR SYSTEMS WILL BE COVERED IN ADDITION FOUNDAMENTAL ISSUES SUCH AS MODELLING, SYNTHESIS, CARACTARIZATION ETC.

  • 2008 8th IEEE Conference on Nanotechnology (IEEE-NANO)

    This conference is the sequel to meetings held in Maui (2001), Washington (2002), San Francisco (2003), Munich (2004), Nagoya (2005), Cinncinati (2006), and Hong Kong (2007). The conference focus will be on engineering and business issues related to nanoelectronics, circuits, architectures, sensor systems, integration, reliability and manufacturing in addition to fundamental issues such as modeling, growth/synthesis, and characterization. The conference will feature plenary, invited, and contributed papers

  • 2007 7th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2006 6th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2005 5th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2004 4th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2003 3rd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2002 2nd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2001 1st IEEE Conference on Nanotechnology (IEEE-NANO)


2018 IEEE 22nd International Conference on ComputerSupported Cooperative Work in Design (CSCWD)

Collaboration technologies and applications to the design of processes, products, systems, and services in industries and societies. Application domains include aerospace, automotive, manufacturing, construction, logistics, transportation, power and energy, healthcare, infrastructure, administration, social networks, and entertainment.


More Conferences

Periodicals related to Zinc oxide

Back to Top

Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


More Periodicals

Most published Xplore authors for Zinc oxide

Back to Top

Xplore Articles related to Zinc oxide

Back to Top

Optoelectronic properties in vertically aligned ZnO/Si-nanopillars

[{u'author_order': 1, u'affiliation': u'National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan, 300, Taiwan', u'full_name': u'Hsin-Yi Lee'}, {u'author_order': 2, u'affiliation': u'Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan', u'full_name': u'Yuan-Ming Chang'}, {u'author_order': 3, u'affiliation': u'Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan', u'full_name': u'Wen-Shou Tseng'}, {u'author_order': 4, u'affiliation': u'Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan', u'full_name': u'Pin-Hsu Kao'}, {u'author_order': 5, u'affiliation': u'Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan', u'full_name': u'Hau-Wei Wang'}, {u'author_order': 6, u'affiliation': u'Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan', u'full_name': u'Hung-Ming Tai'}, {u'author_order': 7, u'affiliation': u'Center for Measurement Standards, Industrial Technology Research Institute, Hsinchu 300, Taiwan', u'full_name': u'Leh-Rong Chang'}, {u'author_order': 8, u'affiliation': u'Department of Applied Science, National Hsinchu University of Education, 300, Taiwan', u'full_name': u'Chih-Ming Lin'}, {u'author_order': 9, u'affiliation': u'Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan', u'full_name': u'Jenh-Yih Juang'}] 2012 12th IEEE International Conference on Nanotechnology (IEEE-NANO), None

An effective method of fabricating vertically aligned silicon nanopillars (Si- NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (~9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 μA/cm2 current density criterion is ~ 0.74 ...


Fabrication of ZnO nanowire field emitter arrays with non-coplanar focus electrode structure

[{u'author_order': 1, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Yuanming Liu'}, {u'author_order': 2, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Long Zhao'}, {u'author_order': 3, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Zhipeng Zhang'}, {u'author_order': 4, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Keshuang Zheng'}, {u'author_order': 5, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Daokun Chen'}, {u'author_order': 6, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Guofu Zhang'}, {u'author_order': 7, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Juncong She'}, {u'author_order': 8, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Shaozhi Deng'}, {u'author_order': 9, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Ningsheng Xu'}, {u'author_order': 10, u'affiliation': u"State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, People's Republic of China", u'full_name': u'Jun Chen'}] 2017 30th International Vacuum Nanoelectronics Conference (IVNC), None

ZnO nanowire field emitter arrays with non-coplanar focus electrode structure was designed. A simulation was conducted to verified the focusing ability of the focus electrode structure. The designed structure was realized successfully and the growth condition of ZnO nanowires in the structure was studied.


Terahertz birefringence of ZnO

[{u'author_order': 1, u'affiliation': u'Korea Research Institute of Standards and Science, Daejeon 305-340, Korea', u'full_name': u'Youngchan Kim'}, {u'author_order': 2, u'affiliation': u'Korea Advanced Institute of Science and Technology, Daejeon 305-701, Korea', u'full_name': u'Jaewook Ahn'}, {u'author_order': 3, u'affiliation': u'Korea Research Institute of Standards and Science, Daejeon 305-340, Korea', u'full_name': u'Dae-Su Yee'}] 2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves, None

Terahertz birefringence of zinc oxide is investigated using terahertz time- domain spectroscopy. Birefringence is observed in the <10-10> orientation while not in the <0001> orientation. Dispersion of ordinary and extraordinary refractive indices are measured, and the refractive index difference is found to be -0.18 in the 0.25 ~ 1.35 THz frequency region. It is demonstrated through azimuthal angle dependent transmission ...


Photoresponse of Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

[{u'author_order': 1, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Po-Yu Yang'}, {u'author_order': 2, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'I-Che Lee'}, {u'author_order': 3, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Chia-Tsung Chang'}, {u'author_order': 4, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Chao-Lung Wang'}, {u'author_order': 5, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Hung-Hsien Li'}, {u'author_order': 6, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Yu-Chin Huang'}, {u'author_order': 7, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Chun-Yu Wu'}, {u'author_order': 8, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Yin-Chang Wei'}, {u'author_order': 9, u'affiliation': u'Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan', u'full_name': u'Huang-Chung Cheng'}, {u'author_order': 10, u'affiliation': u'Department of Electronics Engineering, Ming Chi University of Technology, Taipei 24301, Taiwan', u'full_name': u'Jyh-Liang Wang'}, {u'author_order': 11, u'affiliation': u'Department of Electronic Engineering, National Formosa University, Yunlin 63201, Taiwan', u'full_name': u'Wei-Chih Tsai'}] The 4th IEEE International NanoElectronics Conference, None

Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e. 85 °C) hydrothermal method. The proposed devices demonstrated the high field-effect mobility of 9.07 cm2/V*s, low threshold voltage of 2.25 V, high on/off current ratio above 106, and superior current drivability, attributed to the high-quality ...


Thermal Stability and Life of the Gapless Surge Arrester

[{u'author_order': 1, u'affiliation': u'Meidensha Electric Manufacturing Company, Limited', u'full_name': u'M. Mizuno'}, {u'author_order': 2, u'affiliation': u'Meidensha Electric Manufacturing Company, Limited', u'full_name': u'M. Hayashi'}, {u'author_order': 3, u'affiliation': u'Meidensha Electric Manufacturing Company, Limited', u'full_name': u'K. Mitani'}] IEEE Transactions on Power Apparatus and Systems, 1981

The life of the gapless arrester using the ZnO element is examined experimentally. The mode of degradation due to ac voltage application differs according to the composition of ZnO valve element. The watt loss is not always a linear function with time.


More Xplore Articles

Educational Resources on Zinc oxide

Back to Top

eLearning

No eLearning Articles are currently tagged "Zinc oxide"

IEEE-USA E-Books

  • Adsorbate-Semiconductor Sensors

  • Will Composite Nanomaterials Replace Piezoelectric Thin Films for Energy Transduction Applications?

    Semiconducting piezoelectric nanowires (NWs) show significant potential for application in electronic and electromechanical sensors and energy harvesters. In particular, these nanostructures can be used to build composite piezoelectric materials that could offer several advantages when integrated vertically. First, NWs of various lengths opens the possibility to fabricate composite layers thicker than standard thin films (<4 ¿¿m). Second, low¿¿¿temperature fabrication process make this technology compatible with CMOS devices and with different substrates, such as Si, polymers, plastics, metal foils, and even paper. Third, properties such as piezoelectricity, flexibility, and dielectric constant can be improved in NWs, thereby improving the performance of NW¿¿¿containing composite materials. Finally, FEM simulations show that composites can provide better performance compared to piezoelectric thin films of the same thickness, and that performance can be improved by operating in compression or flexion modes by the right choice of the dielectric matrix and NW density.

  • Mechanical Energy Harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems



Standards related to Zinc oxide

Back to Top

No standards are currently tagged "Zinc oxide"


Jobs related to Zinc oxide

Back to Top