Zinc

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'Zinc, or spelter (which may also refer to zinc alloys), is a metallic chemical element; it has the symbol Zn and atomic number 30. (Wikipedia.org)






Conferences related to Zinc

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2012 6th International Conference on Bioinformatics and Biomedical Engineering (iCBBE)

Bioinformatics, Computational Biology, Biomedical Engineering


2010 International Conference on E-Product E-Service and E-Entertainment (ICEEE 2010)

ICEEE is a distinguished forum for advances in research and technologies that drive innovation in E-Product, E-Service and E-Entertainment and their applications. At ICEEE, academics and practitioners gather to discuss challenges and achievements from diverse perspectives, in a comfortable and effective single track conference format.


2009 EMC Europe Workshop Materials in Applications (EMC EUROPE WORKSHOP)

The scope of this Workshop encompasses progress in the development, analysis and application of materials in EMC applications, innovative use of materials in EMC design to reduce coupling and improve electromagnetic shielding, new measuring and test techniques and methodologies for characterizing new materials and their application in the EMC domain.


2009 ICROS-SICE International Joint Conference (ICCAS-SICE 2009)

The conference covers a wide range of fields from measurement and control to system analysis and design, from theory to application and from software to hardware. Newly developed interdisciplinary ideas and concepts transferable from one field to another are especially welcome.



Periodicals related to Zinc

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Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Zinc

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Xplore Articles related to Zinc

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Displays, Sensors, and MEMS - TFTs, Displays and Memories

[{u'author_order': 1, u'affiliation': u'Hitachi, Ltd.', u'full_name': u'Mutsuko Hatano'}, {u'author_order': 2, u'affiliation': u'Cambridge University', u'full_name': u'William Milne'}] 2007 IEEE International Electron Devices Meeting, 2007

None


Self-organized formation of widegap II-VI quantum structures and their optical properties

[{u'author_order': 1, u'affiliation': u'Inst. of Mater. Res., Tohoku Univ., Sendai, Japan', u'authorUrl': u'https://ieeexplore.ieee.org/author/37305966100', u'full_name': u'T. Yao', u'id': 37305966100}] Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference, 1999

Widegap II-VI materials are characterized by the direct bandgap with either Zinc Blend or Wurtzite structures. They have relatively large exciton binding energy and electron-phonon coupling. Those characteristics make the materials very attractive both from scientific points of views and optical device application aspects. The purpose of this talk is to introduce the fabrication of quantum structures of widegap II-VI ...


Complementary thin film electronics based on ZnO/ZnTe

[{u'author_order': 1, u'affiliation': u'Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122', u'authorUrl': u'https://ieeexplore.ieee.org/author/37683704300', u'full_name': u'W. E. Bowen', u'id': 37683704300}, {u'author_order': 2, u'affiliation': u'Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122', u'authorUrl': u'https://ieeexplore.ieee.org/author/37578732900', u'full_name': u'W. Wang', u'id': 37578732900}, {u'author_order': 3, u'affiliation': u'Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122', u'authorUrl': u'https://ieeexplore.ieee.org/author/37309780900', u'full_name': u'J.D. Phillips', u'id': 37309780900}] 2009 Device Research Conference, 2009

Thin film transistors for large-area and/or flexible electronics desire materials with the maximum carrier mobility while maintaining a reasonable deposition temperature. Semiconducting oxides including polycrystalline ZnO and amorphous IGZO have emerged as important candidates for thin film transistors due to their relatively high carrier mobility (~10cm2/Vs) in comparison to amorphous silicon and organic thin films. Digital logic and related electronic ...


Growth of p-type ZnO and its application to ZnO LEDs

[{u'author_order': 1, u'affiliation': u'Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-dong, Buk-gu, 500-712 KOREA', u'authorUrl': u'https://ieeexplore.ieee.org/author/37280892900', u'full_name': u'Seong-Ju Park', u'id': 37280892900}] 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006

A UV ZnO light-emitting diode was realized by using a ZnO p-n homojunction. The ZnO LED showed clear rectification with a threshold voltage of 3.2 V and a UV light emission at 380 nm.


Corrections to “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [Nov 08 3001-3011]

[{u'author_order': 1, u'full_name': u'Flora M. Li'}, {u'author_order': 2, u'full_name': u'Gen-Wen Hsieh'}, {u'author_order': 3, u'full_name': u'Sharvari Dalal'}, {u'author_order': 4, u'full_name': u'Marcus C. Newton'}, {u'author_order': 5, u'full_name': u'James E. Stott'}, {u'author_order': 6, u'full_name': u'Pritesh Hiralal'}, {u'author_order': 7, u'full_name': u'Arokia Nathan'}, {u'author_order': 8, u'full_name': u'Paul A. Warburton'}, {u'author_order': 9, u'full_name': u'Husnu Emrah Unalan'}, {u'author_order': 10, u'full_name': u'Paul Beecher'}, {u'author_order': 11, u'full_name': u'Andrew J. Flewitt'}, {u'author_order': 12, u'full_name': u'Ian Robinson'}, {u'author_order': 13, u'full_name': u'Gehan Amaratunga'}, {u'author_order': 14, u'full_name': u'William I. Milne'}] IEEE Transactions on Electron Devices, 2009

In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, ...


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Educational Resources on Zinc

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eLearning

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IEEE.tv Videos

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IEEE-USA E-Books

  • Introduction

    n applications, microsystems have to be self-powered; therefore, efficient energy scavenging is crucial. The self-powered microsystems are designed to avoid the replacement of energy cells and miniature sensing devices. Vibration-based energy harvesting is a process of capturing ambient kinetic energy and converting it into usable electricity. The growing demand of cell phone devices such as miniature wireless sensor networks, the recent advent of the extremely low power controlled circuit and MEMS devices make such renewable power sources very attractive. In addition, the energy harvesting process is practicable with environmental vibrations such as running machines and human body movement. However, the wide range of environmental energy keeps harvester low efficiency when deployed in a stochastic surrounding vibration.

  • Perfect Hashing

    This chapter contains sections titled:OverviewChichelli's Construction

  • Optimum Hashing

    This chapter contains sections titled:The Ullman–Yao FrameworkThe Rates at Which a Cell is Probed and OccupiedPartitions of(_i_)Scenarios,(_i_)Subscenarios, and Their SkeletonsRandomly Generated_m_‐ScenariosBounds on Random SumsCompleting the Proof of Theorem 15.1

  • Design and Fabrication of Flexible Piezoelectric Generators Based on ZnO Thin Films

    The piezoelectric transducer for vibration-energy harvesting is constructed of a piezoelectric layer, bottom electrode and a top electrode. In order to obtain an appropriate transducer for the low-frequency operating; environmentally-friendly and long-term, the flexible substrate, the piezoelectric layer, and the additional mass-loading have been investigated thoroughly. Firstly, flexible piezoelectric harvesters based on ZnO (Zinc Oxide) thin films for self-powering and broad bandwidth applications. The design and simulation of a piezoelectric cantilever plate was described by using commercial software ANSYS FEA (finite element analysis) to determine the optimum thickness of PET substrate, internal stress distribution, operation frequency and electric potential. A modified design of a flexible piezoelectric energy-harvesting system with a serial bimorph of ZnO piezoelectric thin film was presented to enhance significantly higher power generation. This high-output system was examined at 15 Hz. The maximum DC (direct current) voltage output voltage with loading was 3.18 V, and the maximum DC power remained at 2.89 µW/cm2. Secondly, this investigation fabricates double-sided piezoelectric transducers for harvesting vibration- power. The double-sided piezoelectric transducer is constructed by depositing piezoelectric thin films. The Ti (titanium) and Pt (platinum) layers were deposited using a dual-gun DC sputtering system between the piezoelectric thin film and the back side of the SUS304 substrate. The maximum open circuit voltage of the double-sided ZnO power transducer is approximately 18 V. After rectification and filtering through a 33 nF capacitor, a specific power output of 1.3 µW/cm2 is obtained from the double-sided ZnO transducer with a load resistance of 6 M?>

  • Guidance for Deploying GAA

    This chapter contains sections titled:Integration with Application ServersIntegration with OS SecurityIntegration with Identity Management SystemsIntegration of GAA into Mobile NetworksReferences

  • Number Theory and Modern Algebra

    This chapter contains sections titled:Prime NumbersModular Arithmetic and the Euclidean AlgorithmModular MultiplicationThe Theorems of Fermat and EulerFields and Extension FieldsFactorization of IntegersTesting Primality

  • Adsorbate-Semiconductor Sensors

    This chapter contains sections titled: * Adsorbate-Surface Charge Transfer * Sensors * Summary

  • Will Composite Nanomaterials Replace Piezoelectric Thin Films for Energy Transduction Applications?

    Semiconducting piezoelectric nanowires (NWs) show significant potential for application in electronic and electromechanical sensors and energy harvesters. In particular, these nanostructures can be used to build composite piezoelectric materials that could offer several advantages when integrated vertically. First, NWs of various lengths opens the possibility to fabricate composite layers thicker than standard thin films (<4 µm). Second, low‐temperature fabrication process make this technology compatible with CMOS devices and with different substrates, such as Si, polymers, plastics, metal foils, and even paper. Third, properties such as piezoelectricity, flexibility, and dielectric constant can be improved in NWs, thereby improving the performance of NW‐containing composite materials. Finally, FEM simulations show that composites can provide better performance compared to piezoelectric thin films of the same thickness, and that performance can be improved by operating in compression or flexion modes by the right choice of the dielectric matrix and NW density.

  • Mechanical Energy Harvesting with Piezoelectric Nanostructures: Great Expectations for Autonomous Systems

    This chapter contains sections titled: * Introduction * Mechanical Energy Harvesting using MEMS * Mechanical Energy Harvesting using Piezoelectric Nanostructures * Further Improvements at the Nanoscale * Towards Completely Autonomous Systems: Multisource Approach * Conclusions and Future Prospects ]]>

  • Review of Stochastic Process

    This chapter presents the basic concepts of stochastic process. The main focus is on discrete‐time and continuous‐time Markov processes with an application to power systems reliability. In engineering applications, a discrete‐time homogeneous Markov process can be represented by a state‐transition diagram, which shows all possible states as well as the transition probabilities. In a discrete‐time Markov process, a state can be classified in the state space using transition probability. For a finite‐state discrete‐time Markov process, the state space can be decomposed into disjoint sets of transient and recurrent states. It is also of interest to find the time that a process encounters a state for the first time, called first passage time. For finding the mean first passage time, some transition probabilities may need to be set to zero to create appropriate sets of transient and recurrent states.



Standards related to Zinc

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