Zinc

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'Zinc, or spelter (which may also refer to zinc alloys), is a metallic chemical element; it has the symbol Zn and atomic number 30. (Wikipedia.org)






Conferences related to Zinc

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2012 6th International Conference on Bioinformatics and Biomedical Engineering (iCBBE)

Bioinformatics, Computational Biology, Biomedical Engineering


2010 International Conference on E-Product E-Service and E-Entertainment (ICEEE 2010)

ICEEE is a distinguished forum for advances in research and technologies that drive innovation in E-Product, E-Service and E-Entertainment and their applications. At ICEEE, academics and practitioners gather to discuss challenges and achievements from diverse perspectives, in a comfortable and effective single track conference format.


2009 EMC Europe Workshop Materials in Applications (EMC EUROPE WORKSHOP)

The scope of this Workshop encompasses progress in the development, analysis and application of materials in EMC applications, innovative use of materials in EMC design to reduce coupling and improve electromagnetic shielding, new measuring and test techniques and methodologies for characterizing new materials and their application in the EMC domain.


2009 ICROS-SICE International Joint Conference (ICCAS-SICE 2009)

The conference covers a wide range of fields from measurement and control to system analysis and design, from theory to application and from software to hardware. Newly developed interdisciplinary ideas and concepts transferable from one field to another are especially welcome.



Periodicals related to Zinc

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Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Zinc

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Xplore Articles related to Zinc

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Displays, Sensors, and MEMS - TFTs, Displays and Memories

2007 IEEE International Electron Devices Meeting, 2007

None


Self-organized formation of widegap II-VI quantum structures and their optical properties

Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference, 1999

Widegap II-VI materials are characterized by the direct bandgap with either Zinc Blend or Wurtzite structures. They have relatively large exciton binding energy and electron-phonon coupling. Those characteristics make the materials very attractive both from scientific points of views and optical device application aspects. The purpose of this talk is to introduce the fabrication of quantum structures of widegap II-VI ...


Complementary thin film electronics based on ZnO/ZnTe

2009 Device Research Conference, 2009

Thin film transistors for large-area and/or flexible electronics desire materials with the maximum carrier mobility while maintaining a reasonable deposition temperature. Semiconducting oxides including polycrystalline ZnO and amorphous IGZO have emerged as important candidates for thin film transistors due to their relatively high carrier mobility (~10cm2/Vs) in comparison to amorphous silicon and organic thin films. Digital logic and related electronic ...


Growth of p-type ZnO and its application to ZnO LEDs

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006

A UV ZnO light-emitting diode was realized by using a ZnO p-n homojunction. The ZnO LED showed clear rectification with a threshold voltage of 3.2 V and a UV light emission at 380 nm.


Corrections to “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [Nov 08 3001-3011]

IEEE Transactions on Electron Devices, 2009

In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, ...


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Educational Resources on Zinc

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IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Zinc"

IEEE-USA E-Books

  • Displays, Sensors, and MEMS - TFTs, Displays and Memories

    None

  • Self-organized formation of widegap II-VI quantum structures and their optical properties

    Widegap II-VI materials are characterized by the direct bandgap with either Zinc Blend or Wurtzite structures. They have relatively large exciton binding energy and electron-phonon coupling. Those characteristics make the materials very attractive both from scientific points of views and optical device application aspects. The purpose of this talk is to introduce the fabrication of quantum structures of widegap II-VI materials and their optical properties. The materials system we will discuss includes (1) ZnSe quantum structures embedded in ZnS, (2) Mn-doped ZnSe quantum structures embedded in ZnS, (3) CdSe quantum dots on ZnSe, and (4) ZnO quantum dots.

  • Complementary thin film electronics based on ZnO/ZnTe

    Thin film transistors for large-area and/or flexible electronics desire materials with the maximum carrier mobility while maintaining a reasonable deposition temperature. Semiconducting oxides including polycrystalline ZnO and amorphous IGZO have emerged as important candidates for thin film transistors due to their relatively high carrier mobility (~10cm2/Vs) in comparison to amorphous silicon and organic thin films. Digital logic and related electronic circuitry based on semiconducting oxides would benefit tremendously from a complementary device technology. However, these materials are all intrinsically n-type and have not demonstrated a reliable means for obtaining p-type thin films. Alternatively, polycrystalline ZnTe thin films are intrinsically p-type and exhibit relatively high hole mobility (~5cm2/Vs) at low deposition temperatures (<300°C). In this work, ZnO and ZnTe thin film transistors (TFTs) and associated complementary logic inverters are demonstrated.

  • Growth of p-type ZnO and its application to ZnO LEDs

    A UV ZnO light-emitting diode was realized by using a ZnO p-n homojunction. The ZnO LED showed clear rectification with a threshold voltage of 3.2 V and a UV light emission at 380 nm.

  • Corrections to “Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [Nov 08 3001-3011]

    In our paper [F.M. Li et al., 2008], two errors were noticed after the paper went to press. On page 3002, near the middle of the left column, it should say "In this method, zinc oxide and carbon powders are mixed together, usually in a ZnO:C ratio of 1: 1 or 1:4 by weight." In Fig. 8, on page 3005, the x-axis label should say "energy (eV)" instead of "wavelength (eV)." Also, this paper should have been designated as Invited, as it is now above.

  • Femtosecond determination of optical nonlinearities in CdS, GaP, ZnO, ZnS, ZnSe and ZnTe

    Nonlinear reaction in semiconductors has received much attention recently, partially due to its potential in applications such as optical switching, amplification, and limiting. We report a method to unambiguously determine these three effects, by using the single beam Z-scan technique and single color time-resolved Z-scan technique with a femtosecond laser.

  • Rotation Waves and Turbulence in a Multispecies Plasma

    Summary form only given. We show that in an electron-light ion-heavy ion plasma, the light component can rotate with a frequency, Omega<sub>r</sub> = (Zn<sub>H</sub>/n<sub>e</sub>)Omega<sub>L</sub> where n<sub>H</sub> and n<sub>e</sub> are their densities, Z is the heavy ion charge state, and Omega<sub>L</sub> is the light ion gyro-frequency. There is a current perpendicular to the magnetic field due to the light ion and electron EtimesB drift, which induces an electric field in the direction of the current. Hence the plasma is subject to electric forces simultaneously in the two orthogonal directions perpendicular to the magnetic field resulting in rotation of the lighter fluids. Omega<sub>r</sub> falls in-between the light and heavy ion cyclotron frequencies. The rotation introduces a new time scale and can significantly affect the waves with frequencies close to Omega<sub>r</sub>. This is analogous to the cyclotron phenomenon but distinct from it. We show that for the rotation waves, the wave energy is mainly in the kinetic (rotation) energy of the light ion fluid which affects the large-scale MHD properties; in particular, the character of turbulence. For example, the nonlinear MHD wave evolution near Omega <sub>r</sub> is governed by a nonlinear Schrodinger equation. For long wavelengths (kVA = Omega<sub>r</sub>) the dispersion relation becomes isomorphic to the electrostatic Langmuir wave dispersion relation. The interaction of the fast rotation time-scale with the slow heavy ion magnetosonic time-scale is achieved via ponderomotive force resulting in the formation of long wavelength condensates and strong turbulence. This implies that the turbulence spectrum is likely to be determined by the appearance and collapse of solitons into structures with scale size L~VA/Omega<sub>r</sub>. We also show that nonlinearly the waves near Omega<sub>r</sub> can support large magnetic gradients and lead to plasma energization. Applications to space and astrophysical environments will be discussed

  • Synthesis of nanostructured ZnO at oxidation of liquid Zn by supercritical CO<inf>2</inf>

    The synthesis of nanoparticles (ZnO)n was found out at study of liquid zinc (Zn)L oxidizing by supercritical CO2. This process called as chemical recondensation (CR). It was determined that depending on CR conditions the nanoparticles with size of 5-50 nm and the nanoneedles with diameter of 25.100 nm, length of up to 50 mum are synthesized. For CR of (Zn)L in CO2 the cluster mechanism is suggested and kinetic parameters are estimated. Besides (ZnO)n at zinc CR in CO2 carbon and CO are formed.

  • Synthesis of nano-sized powders of transparent conductive aluminum-doped zinc oxide by electrolysis-modified co-precipitation method

    Nano-sized powders of transparent conductive aluminum-doped zinc oxide (AZO) have been successfully prepared by electrolysis-modified co-precipitation method. By adding ammonium hydroxide into the precursor solution prepared by electrolytic dissolution of zinc metal in a buffered electrolyte solution of nitric acid and ammonium nitrate with adequate addition of aluminum nitrate, co-precipitate precursors of AZO with particle size between 30 to 60 nm were produced. After washing, filtering, and drying of the co-precipitates, nano- powders of AZO with wurtzite structure were produced when the dried co- precipitate precursors were calcined at temperature above 800degC. By aging at pH = 5 and co-precipitating at pH = 8.0, the atomic ratio of Al/Zn of the nano-powders could be maintained throughout the synthesis. After calcining at 1000degC in air for 2 hours, nano-sized powders of AZO with ZnO wurtzite structure and particle size between 200 to 500 nm were synthesized. Finally, it was found that both the particle sizes of co-precipitate precursors and calcined nano-powders of AZO could be decreased by increasing the pH of the electrolyte solution for electrolytic dissolution.

  • Thin film and sensors

    None



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