Tin

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Tin is a chemical element with the symbol Sn and atomic number 50. (Wikipedia.org)






Conferences related to Tin

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2018 24th International Conference on Pattern Recognition (ICPR)

ICPR will be an international forum for discussions on recent advances in the fields of Pattern Recognition, Machine Learning and Computer Vision, and on applications of these technologies in various fields

  • 2016 23rd International Conference on Pattern Recognition (ICPR)

    ICPR'2016 will be an international forum for discussions on recent advances in the fields of Pattern Recognition, Machine Learning and Computer Vision, and on applications of these technologies in various fields.

  • 2014 22nd International Conference on Pattern Recognition (ICPR)

    ICPR 2014 will be an international forum for discussions on recent advances in the fields of Pattern Recognition; Machine Learning and Computer Vision; and on applications of these technologies in various fields.

  • 2012 21st International Conference on Pattern Recognition (ICPR)

    ICPR is the largest international conference which covers pattern recognition, computer vision, signal processing, and machine learning and their applications. This has been organized every two years by main sponsorship of IAPR, and has recently been with the technical sponsorship of IEEE-CS. The related research fields are also covered by many societies of IEEE including IEEE-CS, therefore the technical sponsorship of IEEE-CS will provide huge benefit to a lot of members of IEEE. Archiving into IEEE Xplore will also provide significant benefit to the all members of IEEE.

  • 2010 20th International Conference on Pattern Recognition (ICPR)

    ICPR 2010 will be an international forum for discussions on recent advances in the fields of Computer Vision; Pattern Recognition and Machine Learning; Signal, Speech, Image and Video Processing; Biometrics and Human Computer Interaction; Multimedia and Document Analysis, Processing and Retrieval; Medical Imaging and Visualization.

  • 2008 19th International Conferences on Pattern Recognition (ICPR)

    The ICPR 2008 will be an international forum for discussions on recent advances in the fields of Computer vision, Pattern recognition (theory, methods and algorithms), Image, speech and signal analysis, Multimedia and video analysis, Biometrics, Document analysis, and Bioinformatics and biomedical applications.

  • 2002 16th International Conference on Pattern Recognition


2018 7th Electronic System-Integration Technology Conference (ESTC)

This international event brings together both academic as well as the industry leaders to discuss and debate about the state-of-art and future trends in electronics packaging and integration technologies.


2017 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

The Internet of Things, including wearable devices and smart home products, will again be a big theme. To cater for the technology trends, the theme of IMPACT-IAAC 2016 highlights "IMPACT on the Next Big Things" and will arrange panel sessions, invited talks, industrial sessions and outstanding paper presentations.


2017 14th IEEE Annual Consumer Communications & Networking Conference (CCNC)

IEEE CCNC 2017 will present the latest developments and technical solutions in the areas of home networking, consumer networking, enabling technologies (such as middleware) and novel applications and services. The conference will include a peer-reviewed program of technical sessions, special sessions, business application sessions, tutorials, and demonstration sessions


2017 14th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON)

Devices, Circuits and Systems; Electrical Power Systems; Signal Processing; Computers; Communication Systems; Contrrols, Instrumentation and Measurements; Telecommunications, Information Technology; Electrical Engineering


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Periodicals related to Tin

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Consumer Electronics, IEEE Transactions on

The design and manufacture of consumer electronics products, components, and related activities, particularly those used for entertainment, leisure, and educational purposes


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Most published Xplore authors for Tin

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Xplore Articles related to Tin

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Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


CGS-Thin Films Solar Cells on Transparent Back Contact

R. Caballero; Siebentritt; K. Sakurai; C. A. Kaufmann; M. Ch. Lux-steiner 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

The goal of this work is to fabricate and study wide gap CuGaSe 2 solar cells to be used as top cell of a mechanically stacked tandem device. CuGaSe2 (CGS) absorber thin films are prepared by co-evaporation in a three stage process onto Mo/soda-lime glass substrates and onto different transparent conductive oxides (TCOs): SnO2:F (FTO) and ln2O3:Sn (ITO). Laser light ...


Enhancement of Two-Factor User Authentication in Wireless Sensor Networks

Hui-Feng Huang; Ya-Fen Chang; Chun-Hung Liu 2010 Sixth International Conference on Intelligent Information Hiding and Multimedia Signal Processing, 2010

Wireless sensor networks are widely used for applications such as environmental monitoring, airport safety, health care, etc. For user authentication, in 2009, Das proposed a two-factor user authentication scheme in wireless sensor networks. They claimed that this scheme provided efficiency, strong security, and user anonymity property. However, we find that Das's scheme is still vulnerable to masquerade attack and cannot ...


Effects of Impurities in CdTe/CdS Structures: Towards Enhanced Device Efficiencies

D. P. Halliday; M. Emziane; K. Durose; A. Bosio; N. Romeo 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

We report on a comprehensive study of the effect of impurities in thin film CdTe/CdS PV structures. Dynamic, quantitative SIMS and ICPMS spectrometry have been used to analyze starting materials, device layers and final device structures. Source materials of different purity were used: CdCl2 (5N to 95%), CdTe (7N to 5N), CdS (4N) and TCO (5N). Structures grown on glass ...


Effect of Zn addition on thermoelectric properties of Zn<sub>4</sub>Sb<sub>3</sub> synthesized by direct hot pressing

Soon-Chul Ur; Joon-Chul Kwon; Il-Ho Kim; P. Nash; Young-Geun Lee; Soon-Yong Kweon; Tae-Whan Hong ICT 2005. 24th International Conference on Thermoelectrics, 2005., 2005

Powder metallurgy was used to produce polycrystalline specimens of single phase &epsi;-Zn4Sb3 and two-phase specimens of &epsi;-Zn4Sb3 (majority phase) and Zn. The effect of excess Zn addition to the stoichiometry of Zn4Sb3 was investigated on the thermoelectric properties as well as mechanical properties in the alloy system. The room-temperature thermoelectric properties of our single phase Zn4Sb3 alloys are comparable to ...


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Educational Resources on Tin

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eLearning

Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


CGS-Thin Films Solar Cells on Transparent Back Contact

R. Caballero; Siebentritt; K. Sakurai; C. A. Kaufmann; M. Ch. Lux-steiner 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

The goal of this work is to fabricate and study wide gap CuGaSe 2 solar cells to be used as top cell of a mechanically stacked tandem device. CuGaSe2 (CGS) absorber thin films are prepared by co-evaporation in a three stage process onto Mo/soda-lime glass substrates and onto different transparent conductive oxides (TCOs): SnO2:F (FTO) and ln2O3:Sn (ITO). Laser light ...


Enhancement of Two-Factor User Authentication in Wireless Sensor Networks

Hui-Feng Huang; Ya-Fen Chang; Chun-Hung Liu 2010 Sixth International Conference on Intelligent Information Hiding and Multimedia Signal Processing, 2010

Wireless sensor networks are widely used for applications such as environmental monitoring, airport safety, health care, etc. For user authentication, in 2009, Das proposed a two-factor user authentication scheme in wireless sensor networks. They claimed that this scheme provided efficiency, strong security, and user anonymity property. However, we find that Das's scheme is still vulnerable to masquerade attack and cannot ...


Effects of Impurities in CdTe/CdS Structures: Towards Enhanced Device Efficiencies

D. P. Halliday; M. Emziane; K. Durose; A. Bosio; N. Romeo 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

We report on a comprehensive study of the effect of impurities in thin film CdTe/CdS PV structures. Dynamic, quantitative SIMS and ICPMS spectrometry have been used to analyze starting materials, device layers and final device structures. Source materials of different purity were used: CdCl2 (5N to 95%), CdTe (7N to 5N), CdS (4N) and TCO (5N). Structures grown on glass ...


Effect of Zn addition on thermoelectric properties of Zn<sub>4</sub>Sb<sub>3</sub> synthesized by direct hot pressing

Soon-Chul Ur; Joon-Chul Kwon; Il-Ho Kim; P. Nash; Young-Geun Lee; Soon-Yong Kweon; Tae-Whan Hong ICT 2005. 24th International Conference on Thermoelectrics, 2005., 2005

Powder metallurgy was used to produce polycrystalline specimens of single phase &epsi;-Zn4Sb3 and two-phase specimens of &epsi;-Zn4Sb3 (majority phase) and Zn. The effect of excess Zn addition to the stoichiometry of Zn4Sb3 was investigated on the thermoelectric properties as well as mechanical properties in the alloy system. The room-temperature thermoelectric properties of our single phase Zn4Sb3 alloys are comparable to ...


More eLearning Resources

IEEE-USA E-Books

  • Board Reflow Processes and their Effect on Tin Whisker Growth

    This chapter reviews the potential affect that the board reflow process has on tin whisker growth. Investigations in this area have looked at grain orientations and grain size, solder paste volume, and solder peak temperature on tin whisker growth. The chapter discusses the results on tin whisker testing on soldered pure¿¿¿tin¿¿¿coated components after reflow. There has been work to understand the affect of reflow profile, reflow atmosphere, solder paste volume, and flux activity on tin whisker growth. For tin¿¿¿lead soldering, the lower soldering peak temperature reduced solder paste wetting up the component lead frame increasing the potential for tin whisker growth. Different flux activators were found to aid the oxidation of tin, which increased tin whisker growth after temperature and humidity testing. Increased contamination of the soldered components with chloride and sulfate also increased tin whisker growth after temperature and humidity testing.

  • Mechanically Induced Tin Whiskers

    This chapter discusses the pressure¿¿¿induced whisker at separable interfaces as a key reliability issue of lead¿¿¿free separable contacts and connectors. It shows theories of mechanically induced tin whiskers. Then, several case studies with pure tin and lead¿¿¿free finishes were performed to evaluate pressure¿¿¿induced tin whiskers. For electronics components, several factors affect the stress field of the finish: (i) thickness of the plating, (ii) structure of the ambient component material, and (iii) material microstructures. As a methodology for the assessment of pressure¿¿¿induced tin whisker formation, the creep¿¿¿based tin whisker formation model shows good results. Several connectors with tin or tin¿¿¿rich alloy finishes were assessed by means of the nanoindentation technique. For the flexible printed circuit (FPC), mechanical properties of adhesives are key factors influencing tin whisker formation. Each mechanical property can be obtained by the indentation technique, and stress distribution can be estimated by finite element analysis (FEA).

  • Characterization Techniques for Film Characteristics

    This chapter shows data regarding whisker phenomena that are characterized by the most recent transmission electron microscopy (TEM), scanning electron microscopy (SEM), and electron backscatter diffraction (EBSD) techniques. It introduces several examples of SEM image use in tin whisker analysis: observation of tin whisker shape, measurement of tin whisker length and kink angle, and confirmation that tin whiskers do indeed generate from the base metal. The chapter describes concrete examples of whisker analysis that use the techniques. The chapter also discusses general crystal orientation characterization techniques and then focuses on the principles of and advances in EBSD and its use in investigating the effects of crystal orientation on tin whisker formation. Many examples of characterization by using TEM, SEM, and EBSD techniques for tin and tin¿¿¿based alloy finishes show how to clarify the essential characteristics of the films so that the authors can deepen their understanding of whisker formation mechanisms.

  • Overview of Whisker¿¿¿Mitigation Strategies for High¿¿¿Reliability Electronic Systems

    In practice, management of the risks associated with tin whiskering is not fundamentally different from managing risks associated with other failure modes that bedevil electronic systems. However, the underlying uncertainties and associated lack of predictability of the tin whiskering phenomenon create a challenging environment for risk management. In order to reduce failure risk presented by tin whiskers, electronic equipment manufacturers need to understand various mitigation strategies and their effectiveness at preventing whisker¿¿¿related failures. Equipment manufacture mitigation strategies may include setting spacing limits, hot solder dipping, solder assembly and inspection, encapsulation, or application of an insulation coating layer. Appropriate supply chain management will vary depending upon the willingness of the supplier to implement special tin controls and level of complexity of the purchased item, that is, components, simple assemblies, major subassemblies, etc. Effective and efficient tin whisker risk mitigation requires each tier of the supply chain to play its proper role.

  • OLED Materials

    OLED performance is largely dependent upon OLED materials. This chapter describes the classification of OLED materials and typical OLED materials.OLED materials are divided into two types ¿¿¿ vacuum evaporation type and solution type ¿¿¿ from a process point of view. Vacuum evaporation materials are usually small molecular materials, while solution type materials contain polymers, dendrimers, and small molecular materials. In addition, materials are also divided into fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescent (TADF) materials in terms of emission mechanisms. From the function point of view, OLED materials can be classified as hole injection material, hole transport material, emission material, host material in emissive layer, electron transport material, electron injection material, charge blocking material, etc.Anode and cathode materials are also important, so this chapter also describes anode and cathode materials.In addition, this chapter describes molecular orientations of organic materials because this also influences OLED characteristics.

  • Quantitative Assessment of Stress Relaxation in Tin Films by the Formation of Whiskers, Hillocks, and Other Surface Defects

    This chapter focuses on development and validation of a surface¿¿¿defect counting procedure, which can be applied in research on the specific mechanisms responsible for stress relaxation and tin whisker formation in tin films. It describes how to quantify the stress relaxation that can be attributed to the separate types of defects, each with a lower reliability risk than tin whiskers, and how the data can be combined to quantify overall stress relaxation in a given film under a given set of conditions. The chapter explains what comparisons of such data from the same films under different conditions, or different films under the same stressing conditions. It reveals about the relationship between film microstructure, stressing conditions, and stress relaxation. The defect assessment methodology documented evolution of film microstructure and defect formation among the 18 different sample types, providing a method to quantify the complexity of stress relaxation in tin surface finishes.

  • OLED Devices

    While the fundamental device structure of OLEDs is simple in a sense, there are various types of OLED devices, which can be classified into various categories. From the point of view of emitting directions, OLED devices are classified as bottom emission, top emission, and both¿¿¿side emission (transparent). OLED devices are also classified into normal and inverted structures from the point of view of the stacking order of the electrodes.In addition, this chapter describes some useful technologies for practical OLED displays and lighting: white OLEDs, full¿¿¿color technologies, micro¿¿¿cavity structures, multi¿¿¿photon structures, and encapsulating technologies.

  • Properties and Whisker Formation Behavior of Tin¿¿¿Based Alloy Finishes

    This chapter reviews the basic properties of tin¿¿¿based alloy finishes and the effect of various alloying elements on whisker formation. The focus is on whisker test data and potential mechanisms for whisker suppression or enhancement for each element. A close look based on experimental data at the mechanisms of spontaneous whisker formation or suppression in matte Sn¿¿¿Cu alloy finishes reveals how adding minor elements to the copper base material (lead frame) can significantly change the whisker formation propensity of the alloy finish. Significantly different tendencies of whisker formation from the same matte Sn¿¿¿Cu coating electrodeposited on two different copper lead frames, namely, copper¿¿¿iron and copper¿¿¿chromium, were found. The results of these examinations clarified the mechanisms of formation and suppression of whiskers grown from the Sn¿¿¿Cu coating, and they established a countermeasure against the spontaneous whisker formation through the selection of the copper lead¿¿¿frame material.

  • Basic Performance Characteristics of Wearable Antennas over a Wide Frequency Range

    This chapter describes the basic performance characteristics of wearable antennas for body-centric wireless communications over a wide frequency range. It overviews frequency dependence of the communication channels between 3 MHz and 3 GHz for wearable antennas mounted on the human body. A static human body model which has a posture of standing in free space is employed in order to characterize various frequency channels. The chapter discusses the electric field distributions around the human body, received open voltage, and power transmission efficiency with ideal matching circuits. It describes the influence of a surrounding environment (namely a metal floor and a wall close to the human body) on the electric field distribution and received open voltages around the human body. The chapter demonstrates two different scenarios to apply the basic results to practical situations: a commercialized wall-mounted identification (ID) tag system and a human vital data acquisition system using a dual-mode antenna.

  • Interworking Security between EPS and Other Systems

    **A concise, updated guide to LTE Security **  This is a welcome Second Edition of the successful book on LTE Security (2010) addressing the security architecture for LTE as specified by 3GPP. Since 2010, LTE has established itself as the unrivalled mobile broadband technology of the fourth generation (4G), with significant commercial deployments around the world and a fast growing market.The subject of this book is hence even more relevant than it has been at the time of the first edition.  The authors explain in detail the security mechanisms employed in LTE and give an overview of the ones in GSM and 3G, which LTE security substantially extends. The specifications generated by standardization bodies inform how to implement the system (and this only to the extent required for interoperability), but almost never inform readers about why things are done the way they are. Furthermore, specifications tend to be readable only for a smal group of experts and lack the context of the broader picture. LTE Security Second Edition describes the essential elements of LTE Security, written by leading experts who participated in decisively shaping LTE security in the relevant standardization body, 3GPP, and explains the rationale behind the standards specifications giving readers a broader understanding of the context to these specifications. * Includes two new chapters covering 3GPP work on Relay Node Security and on system enhancements for Machine-type Communication (MTC), plus application layer security in ETSI TC M2M and embedded smart card in ETSI SCP  * Updates existing chapters , including Voice over LTE, Home base stations, and New Cryptographic Algorithms.



Standards related to Tin

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No standards are currently tagged "Tin"