Thermal expansion

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Thermal expansion is the tendency of matter to change in volume in response to a change in temperature. When a substance is heated, its particles begin moving more and thus usually maintain a greater average separation. (Wikipedia.org)






Conferences related to Thermal expansion

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2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO)

NANO is the flagship IEEE conference in Nanotechnology, which makes it a must for students, educators, researchers, scientists and engineers alike, working at the interface of nanotechnology and the many fields of electronic materials, photonics, bio-and medical devices, alternative energy, environmental protection, and multiple areas of current and future electrical and electronic applications. In each of these areas, NANO is the conference where practitioners will see nanotechnologies at work in both their own and related fields, from basic research and theory to industrial applications.

  • 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2011 10th Conference on Nanotechnology (IEEE-NANO)

    1. Nanomaterials and Nanostructures 2. Nanoelectronics and Nanodevices 3. Nanophotonics 4. Nano biotechnology and Nanomedicine 5. Nanorobotics and NEMS

  • 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO)

    All areas of nanotechnology within the areas of IEEE interest, as covered by the member societies of the Nanotechnology Council.

  • 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO)

    - More Moore, More than Moore and Beyond-CMOS - Nano-optics, Nano-Photonics, Plasmonics, Nano-optoelectronics - Nanofabrication, Nanolithography, Nano Manipulation, Nanotools - Nanomaterials and Nanostructures - Nanocarbon, Nanodiamond, Graphene and CNT Based Technologies - Nano-sensors and Nano Membranes - Modeling and Simulation - System Integration (Nano/Micro/Macro), NEMS, and Actuators - Molecular Electronics, Inorganic Nanowires, Nanocrystals, Quantum Dots

  • 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO)

    THE CONFERENCE FOCUSES ON THE APPLICATION OF NANOSCIENCE AND NANOTECHNOLOGY. SPECIFICALLY, BOTH ENGINEERING ISSUE RELATED TO NANOFABBRICATION , NANOELECTRONICS, SENSOR SYSTEMS WILL BE COVERED IN ADDITION FOUNDAMENTAL ISSUES SUCH AS MODELLING, SYNTHESIS, CARACTARIZATION ETC.

  • 2008 8th IEEE Conference on Nanotechnology (IEEE-NANO)

    This conference is the sequel to meetings held in Maui (2001), Washington (2002), San Francisco (2003), Munich (2004), Nagoya (2005), Cinncinati (2006), and Hong Kong (2007). The conference focus will be on engineering and business issues related to nanoelectronics, circuits, architectures, sensor systems, integration, reliability and manufacturing in addition to fundamental issues such as modeling, growth/synthesis, and characterization. The conference will feature plenary, invited, and contributed papers


2013 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

In order to avoid dangerous climate change, provide sustainable green energy and better life for global population, the ICT products and services need to gain further effective improvements in system performance and integration, and innovate to reduce environmental impact. Over the past years, IMPACT conference, a remarkable platform, continually pay attention to the latest trends of global micro-system, packaging and circuit technology, and encourage the development and research of new materials, processes and designs in realizing the versatile system demands for advanced consumer, communication, cloud & mobile computing, medical and automobile applications.

  • 2012 7th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

    The theme is IMPACT-Leading Innovation. Advanced Packaging Technologies, Power Module and Green Packaging,3D Integration,LED & Optoelectronics Packaging,Interconnections & nanotechnology,Modeling, Simulation & Design.

  • 2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

    The theme is IMPACT-Leading Innovation which reflects the age of technology resolution. The appearance of smart phones and touch panels declare the innovation time and we highly welcome outstanding papers from all over the world to respond the theme and compete with elites overseas on the international stage.

  • 2010 5th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

    Advanced and Emerging Packaging Technology, Nanotechnology & Interconnection, Thermal Management, Advanced Materials, Process & , Advanced Sensor & Microsystems Technology, Modeling, Testing & Design, Electro Deposition and Electrochemical Processing Technology

  • 2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

    Advanced and Emerging Packaging Technology, Nanotechnology & Interconnection, Thermal Management, Advanced Materials, Process & , Advanced Sensor & Microsystems Technology, Modeling, Testing & Design, Electro Deposition and Electrochemical Processing Technology


2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm)

electronics cooling


2012 13th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

The scientific and engineering exploration of thermal, thermomechanical and emerging technology issues associated with electronic devices, packages and systems.

  • 2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

    ITherm 2010 is an international conference for scientific and engineering exploration of thermal, thermomechanical and emerging technology issues associated with electronic devices, packages and systems. ITherm 2010 will be held along with the 60th Electronic Components and Technology Conference, a premier electronic packaging conference. In additon to paper and poster presentations and vendor exhibits, ITherm 2008 will include panel discussions, keynote lectures by prominent speakers...


2010 International Conference on Mechanic Automation and Control Engineering (MACE)

Manufacturing Control and Automation Engineering,CAD/CAM/CIM and Simulation, Materials Processing and Control, Instruments and Vibration Control



Periodicals related to Thermal expansion

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.



Most published Xplore authors for Thermal expansion

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Xplore Articles related to Thermal expansion

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Good Surface Passivation of C-SI by High Rate Plasma Deposited Silicon Oxide

B. Hoex; F. J. J. Peeters; M. Creatore; M. D. Bijker; W. M. M. Kessels; M. c. m. Van De Sanden 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen- octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a ...


Radiation hardened SOS MOSFET technology for infrared focal plane readouts

F. J. Kub; C. T. Yao; J. R. Waterman IEEE Transactions on Nuclear Science, 1990

A silicon-on-sapphire (SOS) MOSFET technology with a body contact technique is shown to provide a reduced kink effect and no edge leakage for a 500 krad(Si) Co-60 dose at 80 K. The approach utilizes a conventional local oxidation of silicon (LOCOS) field implant process with a silicon conducting layer remaining beneath the field oxide. For the design, with the body ...


Thickness Vibration of an Electroelastic Plate Under Biasing Fields

Jiashi Yang IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2007

We study thickness vibrations of an electroelastic plate under uniform but otherwise arbitrary thermoelectromechanical biasing fields in a manner more general than previous studies of thickness vibrations of plates. An exact solution is obtained for materials with general anisotropy. Special attention is paid to the case of thickness- shear vibrations of plates of monoclinic crystals. The special cases of unidirectional ...


A Single-Layer Step-Bridge for Out-Of-Plane Thermal Actuator

Po-I Yeh; Wen-Chih Chen; Chih-Fan Hu; Weileun Fang TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007

This study presents the design and fabrication of a single-layer out-of-plane thermal actuator. The step-bridge structure design enables the actuator bent and then buckled in the out-of-plane direction by Joule-heating. In summary, the step-bridge actuator design has five merits: (l)The linear load-deflect ion relation is achieved, (2)The bi-stable buckling behavior is prevented, (3)The unwanted vibration modes can be suppressed, (4)The ...


Optimal Generation Planning for a Thermal System with Pumped-Storage Based on Analytical Production Costing Model

B. Y. Lee; Y. M. Park; K. Y. Lee IEEE Power Engineering Review, 1987

This paper presents a new algorithm for the optimal long-range generation planning for a thermal system with pumped-storage plants. The algorithm is based upon the analytical production costing model developed under the assumption of Gaussian probabilistic distribution of random load fluctuations and plant outages. The optimization problem consists of the master problem to determine the annual investment, and the pumped-storage ...


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Educational Resources on Thermal expansion

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eLearning

Good Surface Passivation of C-SI by High Rate Plasma Deposited Silicon Oxide

B. Hoex; F. J. J. Peeters; M. Creatore; M. D. Bijker; W. M. M. Kessels; M. c. m. Van De Sanden 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

Silicon dioxide films were deposited by the (industrially applied) expanding thermal plasma technique using a gas mixture of argon-oxygen- octamethylcyclotetrasiloxane (OMCTS) and at deposition rates in the range of 5-23 nm/s. The films composition was investigated by means of spectroscopic ellipsometry, Fourier transform infrared spectroscopy and Rutherford backscattering. The composition was close to that of thermal oxide, with only a ...


Radiation hardened SOS MOSFET technology for infrared focal plane readouts

F. J. Kub; C. T. Yao; J. R. Waterman IEEE Transactions on Nuclear Science, 1990

A silicon-on-sapphire (SOS) MOSFET technology with a body contact technique is shown to provide a reduced kink effect and no edge leakage for a 500 krad(Si) Co-60 dose at 80 K. The approach utilizes a conventional local oxidation of silicon (LOCOS) field implant process with a silicon conducting layer remaining beneath the field oxide. For the design, with the body ...


Thickness Vibration of an Electroelastic Plate Under Biasing Fields

Jiashi Yang IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2007

We study thickness vibrations of an electroelastic plate under uniform but otherwise arbitrary thermoelectromechanical biasing fields in a manner more general than previous studies of thickness vibrations of plates. An exact solution is obtained for materials with general anisotropy. Special attention is paid to the case of thickness- shear vibrations of plates of monoclinic crystals. The special cases of unidirectional ...


A Single-Layer Step-Bridge for Out-Of-Plane Thermal Actuator

Po-I Yeh; Wen-Chih Chen; Chih-Fan Hu; Weileun Fang TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference, 2007

This study presents the design and fabrication of a single-layer out-of-plane thermal actuator. The step-bridge structure design enables the actuator bent and then buckled in the out-of-plane direction by Joule-heating. In summary, the step-bridge actuator design has five merits: (l)The linear load-deflect ion relation is achieved, (2)The bi-stable buckling behavior is prevented, (3)The unwanted vibration modes can be suppressed, (4)The ...


Optimal Generation Planning for a Thermal System with Pumped-Storage Based on Analytical Production Costing Model

B. Y. Lee; Y. M. Park; K. Y. Lee IEEE Power Engineering Review, 1987

This paper presents a new algorithm for the optimal long-range generation planning for a thermal system with pumped-storage plants. The algorithm is based upon the analytical production costing model developed under the assumption of Gaussian probabilistic distribution of random load fluctuations and plant outages. The optimization problem consists of the master problem to determine the annual investment, and the pumped-storage ...


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IEEE-USA E-Books

  • Reliability of High Temperature I2L Integrated Circuits

    Silicon based I2 L circuits have survived a life test for over 5000 hours at 340° C without degradation. These chips used aluminum metallization with current densities below 10,000 ampl sq.cm to avoid electromigration failures. The need for a gold based metal system for high temperature applications has lead to the development of Ti-W diffusion barriers which have withstood temperatures of 360°C for longer than 3500 hours without change. MSI integrated circuits with a Ti-W/Au metallization system have withstood stress tests of over 2000 hours at 360° C. Gold hillock formation has been shown to be caused by the compressive strains induced in the gold film by thermal expansion mismatches. The driving force for gold hillock formation may be eliminated by depositing the gold film at elevated temperatures.

  • Section 7: Other Actuators

    This chapter contains sections titled: Micromechanical Silicon Actuators Based on Thermal Expansion Effects CMOS Electrothermal Microactuators Electrically-Activated, Micromachined Diaphragm Valves Study on Micro Engines - Miniaturizing Stirling Engines for Actuators and Heatpumps A Micro Rotary Actuator Using Shape Memory Alloys Millimeter Size Joint Actuator Using Shape Memory Alloy Reversible SMA Actuator for Micron Sized Robot Characteristics of Thin-Wire Shape Memory Actuators Shape Memory Alloy Microactuators Micro Actuators Using Recoil of an Ejected Mass Precise Positioning Mechanism Utilizing Rapid Deformations of Piezoelectric Elements Tiny Silent Linear Cybernetic Actuator Driven by Piezoelectric Device With Electromagnetic Clamp Experimental Model and IC-Process Design of a Nanometer Linear Piezoelectric Stepper Motor Zinc-Oxide Thin Films for Integrated-Sensor Applications A Micromachined Manipulator for Submicron Positioning of Optical Fibers Ultrasonic Micromotors: Physics and Applications



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