Thermal conductivity

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In physics, thermal conductivity,, is the property of a material's ability to conduct heat. (Wikipedia.org)






Conferences related to Thermal conductivity

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2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2012 13th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

The scientific and engineering exploration of thermal, thermomechanical and emerging technology issues associated with electronic devices, packages and systems.


2012 IEEE PES Asia-Pacific Power and Energy Engineering Conference (APPEEC)

Hydropower Engineering, Thermal Power Engineering, Nuclear Power Engineering, New and Renewable Sources of Energy, Power Transmission and Distribution Techniques, Power Systems Management, Smart Grid, Best Practice.

  • 2011 Asia-Pacific Power and Energy Engineering Conference (APPEEC)

    Hydropower Engineering, Thermal Power Engineering, Nuclear Power Engineering, New and Renewable Sources of Energy, Power Transmission and Distribution Techniques, Power Systems Management, Smart Grid, Best Practice

  • 2010 Asia-Pacific Power and Energy Engineering Conference (APPEEC)

    Hydropower Engineering, Thermal Power Engineering, Nuclear Power Engineering, New and Renewable Sources of Energy, Power Transmission and Distribution Techniques, Power Systems Management, Smart Grid, Best Practice



Periodicals related to Thermal conductivity

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Electrical Insulation Magazine, IEEE

The magazine covers theory, analysis, design (computer-aided design), and practical implementation of circuits, and the application of circuit theoretic techniques to systems and to signal processing. Content is written for the spectrum of activities from basic scientific theory to industrial applications.



Most published Xplore authors for Thermal conductivity

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Xplore Articles related to Thermal conductivity

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Ultrafast thin disk lasers: Towards intralaser extreme nonlinear optics

T. Südmeyer; C. J. Saraceno; C. Schriber; A. Diebold; F. Emaury; M. Golling; A. Klenner; S. Schilt; U. Keller 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015

Ultrafast thin disk lasers generate higher power levels than any other femtosecond oscillator technology. We review the current state of the art and give an outlook towards new applications such as intralaser extreme nonlinear optics.


Structural analysis of a prototype fast shutter for ITER cCXRS diagnostic

A. Panin; W. Biel; Y. Krasikov; O. Neubauer; D. Bardawil 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

Optical lifetime of the first mirror is a critical issue for the ITER upper port plug core charge exchange spectroscopy diagnostic (cCXRS). A fast shutter is engaged to protect the mirror from depositions between measurements. The prototype shutter will be examined in a test vacuum vessel that is now under development in the Forschungszentrum Jülich, Germany. Being located near the ...


A gyrotron-traveling-wave tube amplifier experiment with a ceramic loaded interaction region

M. Garven; J. P. Calame; B. G. Danly; K. T. Nguyen; B. Levush; F. N. Wood; D. E. Pershing IEEE Transactions on Plasma Science, 2002

The design and experimental study of a 35-GHz gyrotron-traveling-wave tube (gyro-TWT) amplifier operating in the circular TE01 mode at the fundamental cyclotron harmonic are presented. The interaction circuit in this experiment consisted of a new type of ceramic loading that provided the required loss for stable operation. A saturated peak power of 137 kW was measured at 34.1 GHz, corresponding ...


High Performance SOI-CMOS Wall Shear Stress Sensors

Ibraheem Haneef; Syed Zeeshan Ali; Florin Udrea; John D. Coull; Howard P. Hodson 2007 IEEE Sensors, 2007

Here we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal shear stress sensor for turbulent flow measurements based on aluminum hot-film as a sensing element. These devices have been fabricated using commercial 1 mum SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step, offering low cost and ...


A Semiempirical Evaluation of the Thermal Conductivity in Ablated Dense Tungsten Plasma

Toru Sasaki; Takuya Takahashi; Yusuke Amano; Yasutoshi Miki; Takashi Kikuchi; Nobuhiro Harada; Kazuhiko Horioka IEEE Transactions on Plasma Science, 2012

For understanding the properties of ablated dense tungsten, we have proposed a semiempirical evaluation of thermal conductivity based on the Wiedemann-Franz law. The electrical conductivity of ablated dense tungsten has been evaluated by the exploding-wire discharges in water and the isochoric heating of wire in a vacuum. The results indicate that the thermal conductivity derived from the electrical conductivity ranges ...


More Xplore Articles

Educational Resources on Thermal conductivity

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eLearning

Ultrafast thin disk lasers: Towards intralaser extreme nonlinear optics

T. Südmeyer; C. J. Saraceno; C. Schriber; A. Diebold; F. Emaury; M. Golling; A. Klenner; S. Schilt; U. Keller 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015

Ultrafast thin disk lasers generate higher power levels than any other femtosecond oscillator technology. We review the current state of the art and give an outlook towards new applications such as intralaser extreme nonlinear optics.


Structural analysis of a prototype fast shutter for ITER cCXRS diagnostic

A. Panin; W. Biel; Y. Krasikov; O. Neubauer; D. Bardawil 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

Optical lifetime of the first mirror is a critical issue for the ITER upper port plug core charge exchange spectroscopy diagnostic (cCXRS). A fast shutter is engaged to protect the mirror from depositions between measurements. The prototype shutter will be examined in a test vacuum vessel that is now under development in the Forschungszentrum Jülich, Germany. Being located near the ...


A gyrotron-traveling-wave tube amplifier experiment with a ceramic loaded interaction region

M. Garven; J. P. Calame; B. G. Danly; K. T. Nguyen; B. Levush; F. N. Wood; D. E. Pershing IEEE Transactions on Plasma Science, 2002

The design and experimental study of a 35-GHz gyrotron-traveling-wave tube (gyro-TWT) amplifier operating in the circular TE01 mode at the fundamental cyclotron harmonic are presented. The interaction circuit in this experiment consisted of a new type of ceramic loading that provided the required loss for stable operation. A saturated peak power of 137 kW was measured at 34.1 GHz, corresponding ...


High Performance SOI-CMOS Wall Shear Stress Sensors

Ibraheem Haneef; Syed Zeeshan Ali; Florin Udrea; John D. Coull; Howard P. Hodson 2007 IEEE Sensors, 2007

Here we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal shear stress sensor for turbulent flow measurements based on aluminum hot-film as a sensing element. These devices have been fabricated using commercial 1 mum SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step, offering low cost and ...


A Semiempirical Evaluation of the Thermal Conductivity in Ablated Dense Tungsten Plasma

Toru Sasaki; Takuya Takahashi; Yusuke Amano; Yasutoshi Miki; Takashi Kikuchi; Nobuhiro Harada; Kazuhiko Horioka IEEE Transactions on Plasma Science, 2012

For understanding the properties of ablated dense tungsten, we have proposed a semiempirical evaluation of thermal conductivity based on the Wiedemann-Franz law. The electrical conductivity of ablated dense tungsten has been evaluated by the exploding-wire discharges in water and the isochoric heating of wire in a vacuum. The results indicate that the thermal conductivity derived from the electrical conductivity ranges ...


More eLearning Resources

IEEE.tv Videos

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ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 3 of 7 - MEG and ULF-MRI
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Cryogenics for Applied Superconductivity - ASC-2014 Plenary series - 11 of 13 - Friday 2014/8/15
Next Generation Power Supplies - APEC 2016
Mildred Dresselhaus: IEEE Medal of Honor 2015

IEEE-USA E-Books

  • Qualitative Study of the Shock Layer in Special Cases

    This chapter contains sections titled: Negligible Bulk Viscosity, Shear Viscosity, and Thermal Conductivity, Negligible Shear Viscosity and Thermal Conductivity, Negligible Electrical Conductivity and Current Inertia, Negligible Bulk Viscosity and Shear Viscosity, Magnetic Field Parallel to Plane of Shock Wave, "Swith-on" and "Swith-off" Shocks, Interpretation of the Results

  • High Temperature Aluminum Nitride Packaging

    As is often the case, advances in electronics are dictated not by the IC devices themselves, but by the ability to package those devices. This is certainly the case for high temperature electronics. The limits of conventional packaging materials such as glass-epoxy circuit boards, plated copper traces and Sn-Pb solder are obvious at temperatures in excess of 300°C. Even standard ceramic packages based on Al2O3 are inadequate above 300°C. Novel materials and assembly techniques required for high temperature operation are presented in this paper. Factors such as thermal conductivity, expansion coefficients, oxidation and diffusion become more critical as operating temperatures increase, and therefore play major roles in determining package construction techniques. The evolution of high temperature package construction will be reviewed in light of these constraints. High temperature packages have been developed based on aluminum nitride (AIN) substrates and nickel metallization. Key features of the packages described in this paper are molded AIN bodies, directly bonded low temperature cofired ceramic (LTCC) frames and silver active braze seals, all of which contribute to producing hermetic packages at high temperatures. A discussion of interconnect metallurgies and attachment methods is included. Test data demonstrating the reliability of AIN high temperature packages will also be presented.

  • Bulk MOSFET

    This chapter focuses on the DC characteristics of bulk metal oxide semiconductor field???effect transistor (MOSFET), and presents a theoretical analysis of the subthreshold and post???threshold current characteristics as an aid to low???energy device design. In a short???channel bulk MOSFET, drain???induced barrier lowering (DIBL) near the source junction at the front interface significantly degrades the subthreshold swing (SS). Band???to???band tunneling often occurs in the gate???drain overlap region. It is sometimes called the gate???induced drain leakage (GIDL) current. For MOSFETs with a thin gate oxide, it has a significant influence on DC and AC operation. In the bulk MOSFET, the thermal conductivity of the substrate is not so high. According to simulations, the temperature near the drain junction quickly rises to 100?????C. Since self???heating effects degrade the surface mobility of carriers, they must be taken into account. In electrostatic???discharge (ESD) protection circuits, self???heating effects reduce the temperature margin for the second breakdown.

  • Conductive Materials

    This chapter contains sections titled: Historical Survey Classification of Conductive Properties Under the Band Theory Free-Electron Theory of Metals - Ohm's Law Ohm's Law - Alternate Derivation The Mean Time Between Electron-Lattice Interactions Mean Free Path Joule's Law The Debye Theory of Specific Heat The Temperature Dependence of the Resistivity of Metals Thermal Conductivity of Metals and the Wiedemann-Franz Law Conductivity of Semiconductors Maxwell's Equations for Conductive Media This chapter contains sections titled: References Problems

  • Phonon Transport in Si Nanostructures

    This chapter develops a Monte Carlo (MC) method for solving the phonon Boltzmann transport equation (BTE) to perform more accurate heat transfer simulations in nanoscale Si devices. In order to evaluate the thermal conductivity, one can adopted one particle MC method, which enables obtaining the statistical convergence efficiently. The chapter uses the MC simulator to analyze the quasi¿¿¿ballistic phonon transport effect on the heat conduction in Si. It considers that the MC method is a good tool for studying the mixture regime between the ballistic and diffusive nature for the phonon transport. The chapter shows the realistic dispersion relation of phonons in bulk Si calculated from the adiabatic bond charge model, whose accuracy was validated through comparison with experimental neutron scattering data. The thermal conductivity of Si nanowires (SiNWs) was also calculated using the MC simulator. In nanostructures, phonons are frequently scattered at boundaries, which significantly impedes heat conduction.



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