Silicon carbide

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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. (Wikipedia.org)






Conferences related to Silicon carbide

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2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

1. Power Electronic Devices (Si and Wide band-gap) and Applications, 2. Power electronic packaging and integration, 3. Modeling, Simulation and EMI, 4. Lighting Technologies and Applications, 5. Wireless Power Transfer, 6. Uncontrolled Rectifiers and AC/DC Converters, 7. AC/AC Converters, 8. DC/AC Inverters, 9. DC/DC Converters, 10. Multilevel Power Converters, 11. Electric Machines, Actuators and Sensors, 12. Motor Control and Drives, 13. Sensorless and Sensor-Reduction Control, 14. Renewable Energy and Distributed Generation Systems, 15. Smart/Micro Grid, 16. DC Distribution 17. Power Quality (or Power Electronics for Utility Interface), 18. Energy Storage and Management Systems, 19. Power Electronics for Transportation Electrification, 20. Reliability, diagnosis, prognosis and protection, 21. High Voltage DC Transmission, 22. Other Selected Topics in Power Electronics

  • 2015 IEEE 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

    Power electronics, renewable energy, electric vehicle, smart grid

  • 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA)

    The seventh International Power Electronics Conference, IPEC-Hiroshima 2014 -ECCE Asia-, will be held from May 18 to May 21, 2014 in Hiroshima, Japan. The conference venue will be the International Conference Center Hiroshima, which is located in Hiroshima Peace Memorial Park. Power electronics has been providing numerous new technologies in the fields of electric energy conversion and motor drive systems for more than 40 years. In recent years, global energy and environmental issues are becoming more serious and power electronics is expected to play a key role in solving such problems. The IPEC-Hiroshima 2014 -ECCE Asia- will provide a unique opportunity for researchers, engineers, and academics from all over the world to present and exchange the latest information on power electronics, motor drives, and related subjects.

  • 2011 IEEE 8th International Conference on Power Electronics & ECCE Asia (ICPE 2011- ECCE Asia)

    01. Power Semiconductor Devices and Packaging 02. Modeling, Simulation, EMI and Reliability 03. Electric Machines, Actuators and Sensors 04. Motor Control and Drives 05. Sensorless Control 06. Renewable Green Energy (Wind, Solar, Tidal Power Generation) 07. Micro Grid and Distributed Generation 08. Electric Propulsion System (EV, Train, Electric Ship) 09. Electric and Hybrid Vehicles 10. Power Supplies and EV Chargers 11. Power Electronics and Drives for Home Appliance 12. Power Elect

  • 2007 7th International Conference on Power Electronics (ICPE)

    - Power Semiconductor Devices - DC-DC Converters - Inverters and Inverter Control Techniques - Motor Drives - Rectifiers and AC-AC Converters - Renewable Energy - Power Quality and Utility Applications - Automotive Applications and Traction Drives - Energy Storage - Control Techniques Applied to Power Electronics - Modeling, Analysis, and Simulation - Consumer Applications - Other Power Applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 13th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

HRI is a highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchersin robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior,anthropology, and many other fields.

  • 2019 14th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2017 12th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    The conference serves as the primary annual meeting for researchers in the field of human-robot interaction. The event will include a main papers track and additional sessions for posters, demos, and exhibits. Additionally, the conference program will include a full day of workshops and tutorials running in parallel.

  • 2016 11th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    This conference focuses on the interaction between humans and robots.

  • 2015 10th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a single -track, highly selective annual conference that showcases the very bestresearch and thinking in human -robot interaction. HRI is inherently interdisciplinary and multidisciplinary,reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificialintelligence, organizational behavior, anthropology, and many other fields.

  • 2014 9th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a highly selective annual conference that showcases the very best research and thinking in human -robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2013 8th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a single -track, highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2012 7th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a single-track, highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2011 6th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    Robot companions Lifelike robots Assistive (health & personal care) robotics Remote robots Mixed initiative interaction Multi-modal interaction Long-term interaction with robots Awareness and monitoring of humans Task allocation and coordination Autonomy and trust Robot-team learning User studies of HRI Experiments on HRI collaboration Ethnography and field studies HRI software architectures HRI foundations Metrics for teamwork HRI group dynamics.

  • 2010 5th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    TOPICS: Robot companions, Lifelike robots, Assistive (health & personal care) robotics, Remote robots, Mixed initiative interaction, Multi-modal interaction, Long-term interaction with robots, Awareness and monitoring of humans, Task allocation and coordination, Autonomy and trust, Robot-team learning, User studies of HRI, Experiments on HRI collaboration, Ethnography and field studies, HRI software architectures

  • 2009 4th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    * Robot companions * Lifelike robots * Assistive (health & personal care) robotics * Remote robots * Mixed initiative interaction * Multi-modal interaction * Long-term interaction with robots * Awareness and monitoring of humans * Task allocation and coordination * Autonomy and trust * Robot-team learning * User studies of HRI * Experiments on HRI collaboration * Ethnography and field studies * HRI software architectures

  • 2008 3rd ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    Robot companions Lifelike robots Assistive (health & personal care) robotics Remote robots Mixed initiative interaction Multi-modal interaction Long-term interaction with robots Awareness and monitoring of humans Task allocation and coordination Autonomy and trust Robot-team learning User studies of HRI Experiments on HRI collaboration Ethnography and field studies HRI software architectures HRI foundations Metrics for teamwork HRI group dynamics Individual vs. group HRI

  • 2007 2nd Annual Conference on Human-Robot Interaction (HRI)


2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 15th IEEE Annual Consumer Communications & Networking Conference (CCNC)

IEEE CCNC 2018 will present the latest developments and technical solutions in the areas of home networking, consumer networking, enabling technologies (such as middleware) and novel applications and services. The conference will include a peer-reviewed program of technical sessions, special sessions, business application sessions, tutorials, and demonstration sessions


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Periodicals related to Silicon carbide

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Silicon carbide

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Xplore Articles related to Silicon carbide

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A wideband 700–1000 MHz short-pulse SiC 300W power amplifier

[{u'author_order': 1, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'V. V. Baranov'}, {u'author_order': 2, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'A. A. Kishchinsky'}, {u'author_order': 3, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'A. D. Matveev'}, {u'author_order': 4, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'G. B. Polyakov'}] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology", None

Results of design and experimental investigation of 700-1000 MHz SiC short- pulsed amplifier with output power upper 300W are presented in this article.


Multiuser detection using CMA and the cancellation method in fast-fading channels

[{u'author_order': 1, u'affiliation': u'Dept. of Inf. & Commun. Eng., Yeungnam Univ., South Korea', u'full_name': u'Sun Jin Yeom'}, {u'author_order': 2, u'full_name': u'Yong Wan Park'}] Vehicular Technology Conference Fall 2000. IEEE VTS Fall VTC2000. 52nd Vehicular Technology Conference (Cat. No.00CH37152), None

In this paper, we introduce a modified interference cancellation scheme for multi-user detection in DS/CDMA. Among ICs (interference cancellers), PIC (parallel interference canceller) requires more stages to have a better BER (bit error rate), and SIC (successive interference canceller) faces the problems of power reordering and large delays. Most of all, the adaptive detector achieves good performance using the adaptive ...


Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

[{u'author_order': 1, u'affiliation': u'Dept. of Phys., Auburn Univ., AL, USA', u'full_name': u'G. Y. Chung'}, {u'author_order': 2, u'full_name': u'C. C. Tin'}, {u'author_order': 3, u'full_name': u'J. R. Williams'}, {u'author_order': 4, u'full_name': u'K. McDonald'}, {u'author_order': 5, u'full_name': u'R. K. Chanana'}, {u'author_order': 6, u'full_name': u'R. A. Weller'}, {u'author_order': 7, u'full_name': u'S. T. Pantelides'}, {u'author_order': 8, u'full_name': u'L. C. Feldman'}, {u'author_order': 9, u'full_name': u'O. W. Holland'}, {u'author_order': 10, u'full_name': u'M. K. Das'}, {u'author_order': 11, u'full_name': u'J. W. Palmour'}] IEEE Electron Device Letters, 2001

Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases ...


High-temperature stability performance of 4H-SiC Schottky diodes

[{u'author_order': 1, u'affiliation': u'University of Valencia, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'E. Maset'}, {u'author_order': 2, u'affiliation': u'University of Valencia, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'E. Sanchis-Kilders'}, {u'author_order': 3, u'affiliation': u'University of Valencia, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'J. Jordan'}, {u'author_order': 4, u'affiliation': u'University of Valencia, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'J. Bta. Ejea'}, {u'author_order': 5, u'affiliation': u'University of Valencia, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'A. Ferreres'}, {u'author_order': 6, u'affiliation': u'University of Valencia, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'V. Esteve'}, {u'author_order': 7, u'affiliation': u'Microelectronics National Center, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'J. Millan'}, {u'author_order': 8, u'affiliation': u'Microelectronics National Center, LEII-Electronic Engineering Dept. E-46100, Burjassot (Valencia), Spain', u'full_name': u'P. Godignon'}] 2009 13th European Conference on Power Electronics and Applications, None

Silicon carbide 300 V-5 A Schottky diodes for high-temperature space applications have been fabricated and characterized. A reliability test, with a DC current stress at 270degC during 600 hours has demonstrated the capability to operate up to 300degC. The main point in this development was the top metallization scheme, where W was used, instead Ni, as Schottky metal, eliminating the ...


Electro-thermal model of an integrated buck converter

[{u'author_order': 1, u'affiliation': u"Université de Toulouse; INP; ENI de Tarbes, LGP, 47 avenue d'Azereix, BP1629, 65016 Tarbes, France", u'full_name': u'Baptiste Trajin'}, {u'author_order': 2, u'affiliation': u"Université de Toulouse; INP; ENI de Tarbes, LGP, 47 avenue d'Azereix, BP1629, 65016 Tarbes, France", u'full_name': u'Paul-Etienne Vidal'}, {u'author_order': 3, u'affiliation': u"Université de Toulouse; INP; ENI de Tarbes, LGP, 47 avenue d'Azereix, BP1629, 65016 Tarbes, France", u'full_name': u'Julien Viven'}] 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), None

This study deals with new integrated systems for power electronic applications including wide-band gap semiconductors. The integration of Silicon carbide (SiC) components provides new perspectives such as higher temperature operating points than conventional Silicon (Si) semiconductors. The present work intends to study the electro-thermal behaviour of an integrated buck converter composed of a Silicon IGBT (Insulated-Gate Bipolar Transistor) and a ...


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IEEE-USA E-Books

  • Introduction

    This chapter discusses the growing economic importance of power electronics and highlights the promise of silicon carbide (SiC) power devices. We briefly review the history of SiC as a wide-bandgap semiconductor, and conclude with an overview of the organization of this book.

  • Recent Advances in Power Semiconductor Technology

    This chapter presents recent advances in power semiconductors technology with special attention on wide bandgap (WBG) transistors. A short introduction to the state¿¿¿of¿¿¿the¿¿¿art Silicon power devices is given, and the characteristics of the various SiC power switches are also described. Design considerations of gate and base¿¿¿drive circuits for various SiC power switches along with experimental results of their switching performance are presented in details. Moreover, a section on applications of SiC power devices is also included, where the three design directions (high¿¿¿efficiency, high switching frequency and high¿¿¿temperature) that might be followed using SiC technology are shown. Last but not least, a short overview of Gallium Nitride transistors is presented in the last section of this chapter.

  • Physical Properties of Silicon Carbide

    SiC crystallizes in a variety of polytypes, each with unique electrical, optical, thermal, and mechanical properties. The physical properties of SiC are important subjects of academic study, as well as critical parameters for accurate simulation and design of devices. In this chapter we review the important physical properties of SiC.

  • Bulk Growth of Silicon Carbide

    Bulk crystal growth is essential for producing single-crystal wafers, the base material for device fabrication. Continued progress in SiC device development relies on the availability of large SiC wafers with high crystal quality. At present, the standard technique for SiC bulk growth is the seeded sublimation (or modified Lely) method, but a few alternative growth techniques have also been studied. This chapter describes the fundamental aspects of SiC bulk growth and the associated technology development.

  • Silicon Carbide High Temperature Electronics - Is This Rocket Science?

  • Epitaxial Growth of Silicon Carbide

    SiC epitaxial growth is used to produce active layers with designed doping density and thickness, because control of doping and thickness in bulk growth is difficult. Homoepitaxial growth technology has shown remarkable progress, with polytype replication and wide-range doping control achieved using step- flow growth and controlling the C/Si ratio, respectively. In this chapter we describe the fundamental aspects and technological developments involved in hexagonal SiC homoepitaxial growth, and briefly discuss heteroepitaxial growth of 3C-SiC.

  • The Finite-Difference Time Domain Method for Solving Maxwell's Equations

    This chapter gives update equations for electric and magnetic fields used in the 3D-finite-difference time domain (FDTD) computation and those in the 2D cylindrical coordinate system. The FDTD method uses the central difference approximation to Maxwell's curl equations, which are Faraday's law and Ampere's law, in the time domain. The chapter then describes subgridding technique, which allows one to employ locally finer grids. Next, it explains an absorbing boundary condition, which is needed for the analysis of electromagnetic fields in an unbounded space. There are two types of absorbing boundary conditions, namely differential-based absorbing boundary condition and material-based absorbing boundary condition. Representations of lumped sources and lumped circuit elements such as a resistor, an inductor, and a capacitor are described. Also, representations of a thin-wire conductor and the lightning return-stroke channel are discussed. Finally, representation of a nonlinear element such as a surge arrester is explained.

  • Unipolar Power Switching Devices

    In this chapter we discuss two unipolar switching devices, junction field- effect transistors (JFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs), describing the basic physical processes and practical power device implementations. JFETs are presented in both single- and double- gated topologies. We begin the study of MOSFETs by reviewing basic metal- oxide-semiconductor (MOS) electrostatics. We then derive operating equations and discuss practical implementations, including both double-diffused metal- oxide-semiconductor field effect transistors (DMOSFETs) and trench-based UMOSFETs. Finally, we discuss practical issues such as threshold voltage control, inversion layer mobility, oxide reliability, and switching performance.

  • Characterization Techniques and Defects in Silicon Carbide

    Characterization of the physical properties, doping densities, and defects in SiC is a fundamental tool in the development of SiC devices. Measurement of physical properties and identification of defect structures are important subjects of academic study. It is important to understand the various defects in SiC because many of them can adversely affect device performance and reliability. In this chapter we describe the fundamental material characterization techniques and present an overview of extended and point defects in SiC.

  • Multisystem Rolling Stocks

    Multisystem rolling stocks employs a traditional configuration for the input stage, which is based on the line frequency transformer and four‐quadrant converters that are tuned to comply with electromagnetic compatibility standards. It is necessary to run the main transformer with different voltage levels and different frequencies, as well as use it as an inductor in the systems. This chapter focuses on the operation of the following multilevel transformers: multivoltage and multifrequency transformers and power electronic traction transformers (PETTs). Multilevel structures allow higher voltage to be adopted in DC section, achieving the goal of increasing the transmittable power with equal transmission losses. The chapter then considers two boost converters whose absorbed current waves have a phase shift of a generic angle. The logical choice for controlling the 4Q converter follows current tracking logic, for which the modulation index m does not appear directly in the control algorithm.



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