Silicon carbide

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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. (Wikipedia.org)






Conferences related to Silicon carbide

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2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013)

Power conversion and motor drives in the green energy era.


2013 International Semiconductor Conference (CAS 2013)

The aim of the conference is two-fold. First, it provides a forum of debate on selected topics of sientific research and technological development. On the other hand, this is an occasion for refreshing a broad perspective of the participants through invited papers and tutorials.The Conference is underlying the development in micro-and nanotechnologies, still maintaining the “traditional” connection with semiconductor electronics.

  • 2012 International Semiconductor Conference (CAS 2012)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in micro- and nano-technologies, physics, design, technology (including semiconductor materials and microelectronics) and application of semiconductor devices and materials.

  • 2011 International Semiconductor Conference (CAS 2011)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in physics, design, technology and application of semiconductor devices and materials.

  • 2010 International Semiconductor Conference (CAS 2010)

    The Conference is underlying the development in micro-and nanotechnologies, still maintaining the traditional connection with semiconductor electronics



Periodicals related to Silicon carbide

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Industry Applications, IEEE Transactions on

The development and application of electric systems, apparatus, devices, and controls to the processes and equipment of industry and commerce; the promotion of safe, reliable, and economic installations; the encouragement of energy conservation; the creation of voluntary engineering standards and recommended practices.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...



Most published Xplore authors for Silicon carbide

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Xplore Articles related to Silicon carbide

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Technological aspects of manufacturing planar microwave diodes with Au-Ti(ZrB/sub x/)-n-n/sup +/ 4HSiC schottky barrier

N. S. Boltovets; V. N. Ivanov; R. V. Konakova; Ya. Ya. Kudrik; V. V. Milenin; O. A. Ageyev; A. M. Svetlichniy; S. I. Solovyov; T. S. Sudarshan 13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003., 2003

The parameters of planar diodes with Au-ZrB/sub x/-n-n/sup +/4HSiC Schottky barrier have been studied both before and after rapid thermal annealing (RTA) at T=1000/spl deg/C. A possibility to produce high-voltage diode structures that remain serviceable after the RTA at T=1000/spl deg/C is demonstrated.


Electrostatically Driven Touch-Mode Poly-SiC Microspeaker

Robert C. Roberts; Jiangang Du; Andojo Ongkodjojo Ong; Dachao Li; Christian A. Zorman; Norman C. Tien 2007 IEEE Sensors, 2007

This paper presents an electrostatically driven microspeaker utilizing a SiC membrane operating in the touch-mode configuration. The device is formed using conventional wafer bonding to hermetically seal a low-stress, heavily-doped polycrystalline 3C-SiC (poly-SiC) membrane to a bulk micromachined silicon back-plate containing a thin oxide insulating layer. The bonding process is done in high vacuum, causing the poly-SiC membrane to flex ...


SiC gas sensor arrays for extreme environments

S. K. Roy; B. J. D. Furnival; N. G. Wood; K. V. Vassilevski; N. G. Wright; A. B. Horsfall; C. J. O'Malley 2013 IEEE SENSORS, 2013

For the first time SiC-based gas sensor arrays have been demonstrated, which are capable of discriminating gas species under harsh environments. The structures utilise either a TiO2 or HfO2 dielectric layer and a Pt or Pd catalytic contact. We show that the defects in the dielectric dominate the response to hydrogen and oxygen, resulting in array behaviour, without the need ...


Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses

B. Ozpineci; L. M. Tolbert; S. K. Islam; M. Hasanuzzaman Industrial Electronics Society, 2001. IECON '01. The 27th Annual Conference of the IEEE, 2001

The emergence of silicon carbide (SiC) based power semiconductor switches with their superior features compared with silicon (Si) based switches has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices are more compact, lighter, and more efficient, so they are ideal for high-voltage power electronics applications, including hybrid electric vehicle (HEV) ...


Status and Trend of SiC Power Semiconductor Packaging

Yangang Wang; Xiaoping Dai; Guoyou Liu; Yibo Wu; Daohui Li; Steve Jones 2015 16th International Conference on Electronic Packaging Technology (ICEPT), 2015

With the superior electrical and thermal properties of wide band gap materials, Silicon Carbide (SiC) devices are capable of working at high power density, high temperature, high frequency, high voltage and high efficiency. Although the substantial investigation on SiC material, device and packaging technologies have been done, there are a series of problems needed to be solved, such as the ...


More Xplore Articles

Educational Resources on Silicon carbide

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eLearning

Technological aspects of manufacturing planar microwave diodes with Au-Ti(ZrB/sub x/)-n-n/sup +/ 4HSiC schottky barrier

N. S. Boltovets; V. N. Ivanov; R. V. Konakova; Ya. Ya. Kudrik; V. V. Milenin; O. A. Ageyev; A. M. Svetlichniy; S. I. Solovyov; T. S. Sudarshan 13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003., 2003

The parameters of planar diodes with Au-ZrB/sub x/-n-n/sup +/4HSiC Schottky barrier have been studied both before and after rapid thermal annealing (RTA) at T=1000/spl deg/C. A possibility to produce high-voltage diode structures that remain serviceable after the RTA at T=1000/spl deg/C is demonstrated.


Electrostatically Driven Touch-Mode Poly-SiC Microspeaker

Robert C. Roberts; Jiangang Du; Andojo Ongkodjojo Ong; Dachao Li; Christian A. Zorman; Norman C. Tien 2007 IEEE Sensors, 2007

This paper presents an electrostatically driven microspeaker utilizing a SiC membrane operating in the touch-mode configuration. The device is formed using conventional wafer bonding to hermetically seal a low-stress, heavily-doped polycrystalline 3C-SiC (poly-SiC) membrane to a bulk micromachined silicon back-plate containing a thin oxide insulating layer. The bonding process is done in high vacuum, causing the poly-SiC membrane to flex ...


SiC gas sensor arrays for extreme environments

S. K. Roy; B. J. D. Furnival; N. G. Wood; K. V. Vassilevski; N. G. Wright; A. B. Horsfall; C. J. O'Malley 2013 IEEE SENSORS, 2013

For the first time SiC-based gas sensor arrays have been demonstrated, which are capable of discriminating gas species under harsh environments. The structures utilise either a TiO2 or HfO2 dielectric layer and a Pt or Pd catalytic contact. We show that the defects in the dielectric dominate the response to hydrogen and oxygen, resulting in array behaviour, without the need ...


Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses

B. Ozpineci; L. M. Tolbert; S. K. Islam; M. Hasanuzzaman Industrial Electronics Society, 2001. IECON '01. The 27th Annual Conference of the IEEE, 2001

The emergence of silicon carbide (SiC) based power semiconductor switches with their superior features compared with silicon (Si) based switches has resulted in substantial improvements in the performance of power electronics converter systems. These systems with SiC power devices are more compact, lighter, and more efficient, so they are ideal for high-voltage power electronics applications, including hybrid electric vehicle (HEV) ...


Status and Trend of SiC Power Semiconductor Packaging

Yangang Wang; Xiaoping Dai; Guoyou Liu; Yibo Wu; Daohui Li; Steve Jones 2015 16th International Conference on Electronic Packaging Technology (ICEPT), 2015

With the superior electrical and thermal properties of wide band gap materials, Silicon Carbide (SiC) devices are capable of working at high power density, high temperature, high frequency, high voltage and high efficiency. Although the substantial investigation on SiC material, device and packaging technologies have been done, there are a series of problems needed to be solved, such as the ...


More eLearning Resources

IEEE-USA E-Books

  • Bulk Growth of Silicon Carbide

    Bulk crystal growth is essential for producing single-crystal wafers, the base material for device fabrication. Continued progress in SiC device development relies on the availability of large SiC wafers with high crystal quality. At present, the standard technique for SiC bulk growth is the seeded sublimation (or modified Lely) method, but a few alternative growth techniques have also been studied. This chapter describes the fundamental aspects of SiC bulk growth and the associated technology development.

  • Epitaxial Growth of Silicon Carbide

    SiC epitaxial growth is used to produce active layers with designed doping density and thickness, because control of doping and thickness in bulk growth is difficult. Homoepitaxial growth technology has shown remarkable progress, with polytype replication and wide-range doping control achieved using step- flow growth and controlling the C/Si ratio, respectively. In this chapter we describe the fundamental aspects and technological developments involved in hexagonal SiC homoepitaxial growth, and briefly discuss heteroepitaxial growth of 3C-SiC.

  • Characterization Techniques and Defects in Silicon Carbide

    Characterization of the physical properties, doping densities, and defects in SiC is a fundamental tool in the development of SiC devices. Measurement of physical properties and identification of defect structures are important subjects of academic study. It is important to understand the various defects in SiC because many of them can adversely affect device performance and reliability. In this chapter we describe the fundamental material characterization techniques and present an overview of extended and point defects in SiC.

  • Device Processing of Silicon Carbide

    Many processing steps are required to fabricate complex electronic devices, including doping by ion implantation, patterning, etching, oxidation, passivation, and metallization. The process flow in SiC device fabrication is similar to that in silicon technology but several unique processes, with particular requirements, are also needed because of the unique physical and chemical properties of SiC. This chapter introduces the fundamental aspects and technological development of ion implantation, etching, oxidation, interface passivation, and Schottky and ohmic contacts in SiC.

  • A Hybrid Silicon Carbide Differential Amplifier for 350C Operation

    An operational amplifier has been designed, fabricated, and tested at 350°C using silicon carbide MESFET pairs and thick film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350°C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high temperature circuit design and assembly using silicon carbide MESFET's and thick film hybrid technology.

  • Future Trends

    The parameter optimization for single-phase quasi-Z-source inverters (qZSI) is still an open topic owing to its superior advantages and widespread applications. This chapter presents the future trends of impedance source inverters/converters. A general expectation was demonstrated in terms of the volume and size reduction by applying wide band gap devices; minimization and optimization of impedance source network parameters for the single-phase qZS inverter topology being used as an independent power system and submodule in CMI; novel control methods, especially the MPC to improve the system performance; and future applications for high-power renewable energy power conversion. A comparison of ZSI using traditional Si devices and silicon carbide (SiC) wide band gap devices is further illustrated, verifying the superiority of cooperating modern semiconductor technique. This chapter has mainly provided a technical insight into the future research and development of impedance source inverters/converters.

  • Optimization and Comparison of Power Devices

    We begin this chapter with a discussion of avalanche breakdown and blocking voltage in power devices, which leads naturally into a survey of edge termination techniques. We then discuss the optimum design of unipolar drift regions in devices such as Schottky diodes, JFETs (junction field-effect transistors), and MOSFETs (metal-oxide-semiconductor field effect transistors), with a brief discussion of lateral RESURF (reduced-surface- field) devices. Finally, we present a consistent methodology for optimizing and comparing unipolar and bipolar devices for a particular set of specifications (i.e., blocking voltage and switching frequency).

  • Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs

    Neutron-induced displacement damage effects in n-channel, depletion-mode junction-fleld-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300°C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 ± 1 cm-3 per n/cm2 is obtained for the deep- level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm-1 at RT to 4.75 cm-1 at 300°C. The relative neutron effect on carrier mobility varies with temperature approximately as T-7/2, dropping by an order of magnitude at 300°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.

  • Frontmatter

    This chapter contains sections titled: Half-Title Page Title Page Copyright Page Table of Contents About the Authors Preface

  • Unipolar and Bipolar Power Diodes

    In this chapter we discuss the most basic power devices: Schottky barrier diodes, pin diodes, and JBS (junction barrier controlled Schottky)/MPS (merged pin Schottky) diodes. We begin by introducing unipolar and bipolar figures-of- merit to characterize device performance. We then consider the physical processes within each device and develop useful design equations, invoking the ambipolar diffusion equation to describe high-level injection in bipolar diodes.



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