Silicon carbide

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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. (Wikipedia.org)






Conferences related to Silicon carbide

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2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013)

Power conversion and motor drives in the green energy era.


2013 International Semiconductor Conference (CAS 2013)

The aim of the conference is two-fold. First, it provides a forum of debate on selected topics of sientific research and technological development. On the other hand, this is an occasion for refreshing a broad perspective of the participants through invited papers and tutorials.The Conference is underlying the development in micro-and nanotechnologies, still maintaining the

  • 2012 International Semiconductor Conference (CAS 2012)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in micro- and nano-technologies, physics, design, technology (including semiconductor materials and microelectronics) and application of semiconductor devices and materials.

  • 2011 International Semiconductor Conference (CAS 2011)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in physics, design, technology and application of semiconductor devices and materials.

  • 2010 International Semiconductor Conference (CAS 2010)

    The Conference is underlying the development in micro-and nanotechnologies, still maintaining the traditional connection with semiconductor electronics



Periodicals related to Silicon carbide

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Industry Applications, IEEE Transactions on

The development and application of electric systems, apparatus, devices, and controls to the processes and equipment of industry and commerce; the promotion of safe, reliable, and economic installations; the encouragement of energy conservation; the creation of voluntary engineering standards and recommended practices.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...




Xplore Articles related to Silicon carbide

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Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Di Han; Jukkrit Noppakunkajorn; Bulent Sarlioglu 2013 IEEE Transportation Electrification Conference and Expo (ITEC), 2013

With the advancement of technology on wide bandgap materials such as silicon- carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional Si devices. However, the ...


Multiple Access Interference Suppression for TWSTFT Applications

Yi-Jiun Huang; Hen-Wai Tsao; Huang-Tien Lin; Chia-Shu Liao IEEE Transactions on Instrumentation and Measurement, 2017

Multiple access interference (MAI) is one of the unstable sources of the two- way satellite time and frequency transfer (TWSTFT), and causes an estimation error of the signal arrival time. To suppress MAI, the successive interference cancellation (SIC) procedure is implemented on the software-defined receiver. It generates MAIs and subtracts them from the received signal to become an interference-free signal. ...


Cholesky Based Efficient Algorithms for the MMSE-SIC Receiver

Junyoung Nam; Seong Rag Kim; Hyun Kyu Chung; Jinho Choi; Jeongseok Ha IEEE GLOBECOM 2007 - IEEE Global Telecommunications Conference, 2007

The minimum mean square error with successive interference cancellation (MMSE- SIC) receiver is known to achieve the capacity of multiple-input multiple- output (MIMO) fast fading channels in the presence of knowledge of the channel at the receiver. This paper presents efficient and numerically stable Cholesky decomposition based detection algorithms for MMSE-SIC, exploiting a property of ordering of MMSE-SIC. The proposed ...


Effect of the base negative drive on the turn-off transient behavior of Si and 4H-SiC power BJTs

Mehrez Oueslati; Hatem Garrab; Atef Jedidi; Hervé Morel; Kamel Besbes 2015 16th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA), 2015

The study of the behavior of a power device operating in a power circuit while considering its interactions with the studied circuit remains a very important step in the power circuit design. The base drive has a primary order effect on the switching speed during the turn-off phase of power bipolar junction transistors. Hence, we will focus in this paper, ...


Massively parallel TDDB testing: SiC power devices

Z. Chbili; J. Chbili; J. P. Campbell; J. T. Ryan; M. Lahbabi; D. E. Ioannou; K. P. Cheung 2015 IEEE International Integrated Reliability Workshop (IIRW), 2015

This paper presents a novel experimental setup to perform wafer level TDDB testing. The massively parallel reliability system is capable of testing a total of 3000 probes simultaneously. The system can perform tests at temperatures up to 400 °C for high temperature applications (SiC). We also present TDDB results of SiO2 on SiC showing higher TDDB lifetime and field acceleration ...


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Educational Resources on Silicon carbide

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eLearning

Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Di Han; Jukkrit Noppakunkajorn; Bulent Sarlioglu 2013 IEEE Transportation Electrification Conference and Expo (ITEC), 2013

With the advancement of technology on wide bandgap materials such as silicon- carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional Si devices. However, the ...


Multiple Access Interference Suppression for TWSTFT Applications

Yi-Jiun Huang; Hen-Wai Tsao; Huang-Tien Lin; Chia-Shu Liao IEEE Transactions on Instrumentation and Measurement, 2017

Multiple access interference (MAI) is one of the unstable sources of the two- way satellite time and frequency transfer (TWSTFT), and causes an estimation error of the signal arrival time. To suppress MAI, the successive interference cancellation (SIC) procedure is implemented on the software-defined receiver. It generates MAIs and subtracts them from the received signal to become an interference-free signal. ...


Cholesky Based Efficient Algorithms for the MMSE-SIC Receiver

Junyoung Nam; Seong Rag Kim; Hyun Kyu Chung; Jinho Choi; Jeongseok Ha IEEE GLOBECOM 2007 - IEEE Global Telecommunications Conference, 2007

The minimum mean square error with successive interference cancellation (MMSE- SIC) receiver is known to achieve the capacity of multiple-input multiple- output (MIMO) fast fading channels in the presence of knowledge of the channel at the receiver. This paper presents efficient and numerically stable Cholesky decomposition based detection algorithms for MMSE-SIC, exploiting a property of ordering of MMSE-SIC. The proposed ...


Effect of the base negative drive on the turn-off transient behavior of Si and 4H-SiC power BJTs

Mehrez Oueslati; Hatem Garrab; Atef Jedidi; Hervé Morel; Kamel Besbes 2015 16th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA), 2015

The study of the behavior of a power device operating in a power circuit while considering its interactions with the studied circuit remains a very important step in the power circuit design. The base drive has a primary order effect on the switching speed during the turn-off phase of power bipolar junction transistors. Hence, we will focus in this paper, ...


Massively parallel TDDB testing: SiC power devices

Z. Chbili; J. Chbili; J. P. Campbell; J. T. Ryan; M. Lahbabi; D. E. Ioannou; K. P. Cheung 2015 IEEE International Integrated Reliability Workshop (IIRW), 2015

This paper presents a novel experimental setup to perform wafer level TDDB testing. The massively parallel reliability system is capable of testing a total of 3000 probes simultaneously. The system can perform tests at temperatures up to 400 °C for high temperature applications (SiC). We also present TDDB results of SiO2 on SiC showing higher TDDB lifetime and field acceleration ...


More eLearning Resources

IEEE-USA E-Books

  • Unipolar Power Switching Devices

    In this chapter we discuss two unipolar switching devices, junction field- effect transistors (JFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs), describing the basic physical processes and practical power device implementations. JFETs are presented in both single- and double- gated topologies. We begin the study of MOSFETs by reviewing basic metal- oxide-semiconductor (MOS) electrostatics. We then derive operating equations and discuss practical implementations, including both double-diffused metal- oxide-semiconductor field effect transistors (DMOSFETs) and trench-based UMOSFETs. Finally, we discuss practical issues such as threshold voltage control, inversion layer mobility, oxide reliability, and switching performance.

  • Physical Properties of Silicon Carbide

    SiC crystallizes in a variety of polytypes, each with unique electrical, optical, thermal, and mechanical properties. The physical properties of SiC are important subjects of academic study, as well as critical parameters for accurate simulation and design of devices. In this chapter we review the important physical properties of SiC.

  • Applications of Silicon Carbide Devices in Power Systems

    This chapter begins with an overview of power electronic systems and basic power converter circuits, including phase-controlled rectifiers and inverters, switch-mode converters and power supplies, motor drives, photovoltaic inverters, and wind turbine converters. With these applications in mind, we then compare the performance of currently-available SiC power devices to the existing silicon technology.

  • Frontmatter

    This chapter contains sections titled: Half-Title Page Title Page Copyright Page Table of Contents About the Authors Preface

  • Bipolar Power Switching Devices

    This chapter deals with three-terminal bipolar power switching devices. We begin with the bipolar junction transistor (BJT), discussing effects such as saturation and quasi-saturation, second breakdown, the Rittner effect, and the Kirk effect. We then consider the insulated-gate bipolar transistor (IGBT), essentially a merged BJT, and metal-oxide-semiconductor field effect transistor (MOSFET). Here we present a new derivation of the static characteristics and discuss the physical mechanisms that limit switching performance. We conclude with a discussion of thyristors and gate-turn-off (GTO) thyristors, including triggering, quenching, and transient response.

  • Bulk Growth of Silicon Carbide

    Bulk crystal growth is essential for producing single-crystal wafers, the base material for device fabrication. Continued progress in SiC device development relies on the availability of large SiC wafers with high crystal quality. At present, the standard technique for SiC bulk growth is the seeded sublimation (or modified Lely) method, but a few alternative growth techniques have also been studied. This chapter describes the fundamental aspects of SiC bulk growth and the associated technology development.

  • Index

    No Abstract.

  • HighTemperature Electronics for Automobiles

    Automotive electronics is already a major market and is expected to increase. The automobile presents a harsh environment for electronics, which must survive thermal cycling and other types of environmental stresses in addition to elevated temperatures. These factors, coupled with demands for high reliability and low cost, and the evolution of automobile design, challenge the capabilities of electronics technology. The potential of several existing and projected technologies to satisfy present and future needs for higher- temperature automotive electronics is considered. Nearterm needs can be met with modified silicon-based electronics, while silicon-carbide technology is a promising candidate for the future. However, there is a universal need for advances in packaging, which is the primary limitation at present. In addition, new approaches are needed to verify reliability and predict lifetime of components.

  • Characterization Techniques and Defects in Silicon Carbide

    Characterization of the physical properties, doping densities, and defects in SiC is a fundamental tool in the development of SiC devices. Measurement of physical properties and identification of defect structures are important subjects of academic study. It is important to understand the various defects in SiC because many of them can adversely affect device performance and reliability. In this chapter we describe the fundamental material characterization techniques and present an overview of extended and point defects in SiC.

  • The Characterization of High Temperature Electronics for Future Aircraft Engine Digital Electronic Control Systems

    The characterization of high temperature electronics is presented including high temperature effects, semiconductors and barrier metallizations. Design solutions and material selections for mitigation of high temperature effects are indicated. The following semiconductor materials are considered as future high temperature candidates: - Silicon (Si) - Gallium arsenide (GaAs) - Gallium phosphide (GaP) - Silicon carbide (SiC) - Diamond like carbon (C) This characterization was originally prepared in accordance with the USAF Future Advance Controls Technology Study (FACTS).



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