Silicon carbide

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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. (Wikipedia.org)






Conferences related to Silicon carbide

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2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

1. Power Electronic Devices (Si and Wide band-gap) and Applications, 2. Power electronic packaging and integration, 3. Modeling, Simulation and EMI, 4. Lighting Technologies and Applications, 5. Wireless Power Transfer, 6. Uncontrolled Rectifiers and AC/DC Converters, 7. AC/AC Converters, 8. DC/AC Inverters, 9. DC/DC Converters, 10. Multilevel Power Converters, 11. Electric Machines, Actuators and Sensors, 12. Motor Control and Drives, 13. Sensorless and Sensor-Reduction Control, 14. Renewable Energy and Distributed Generation Systems, 15. Smart/Micro Grid, 16. DC Distribution 17. Power Quality (or Power Electronics for Utility Interface), 18. Energy Storage and Management Systems, 19. Power Electronics for Transportation Electrification, 20. Reliability, diagnosis, prognosis and protection, 21. High Voltage DC Transmission, 22. Other Selected Topics in Power Electronics

  • 2015 IEEE 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

    Power electronics, renewable energy, electric vehicle, smart grid

  • 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA)

    The seventh International Power Electronics Conference, IPEC-Hiroshima 2014 -ECCE Asia-, will be held from May 18 to May 21, 2014 in Hiroshima, Japan. The conference venue will be the International Conference Center Hiroshima, which is located in Hiroshima Peace Memorial Park. Power electronics has been providing numerous new technologies in the fields of electric energy conversion and motor drive systems for more than 40 years. In recent years, global energy and environmental issues are becoming more serious and power electronics is expected to play a key role in solving such problems. The IPEC-Hiroshima 2014 -ECCE Asia- will provide a unique opportunity for researchers, engineers, and academics from all over the world to present and exchange the latest information on power electronics, motor drives, and related subjects.

  • 2011 IEEE 8th International Conference on Power Electronics & ECCE Asia (ICPE 2011- ECCE Asia)

    01. Power Semiconductor Devices and Packaging 02. Modeling, Simulation, EMI and Reliability 03. Electric Machines, Actuators and Sensors 04. Motor Control and Drives 05. Sensorless Control 06. Renewable Green Energy (Wind, Solar, Tidal Power Generation) 07. Micro Grid and Distributed Generation 08. Electric Propulsion System (EV, Train, Electric Ship) 09. Electric and Hybrid Vehicles 10. Power Supplies and EV Chargers 11. Power Electronics and Drives for Home Appliance 12. Power Elect

  • 2007 7th International Conference on Power Electronics (ICPE)

    - Power Semiconductor Devices - DC-DC Converters - Inverters and Inverter Control Techniques - Motor Drives - Rectifiers and AC-AC Converters - Renewable Energy - Power Quality and Utility Applications - Automotive Applications and Traction Drives - Energy Storage - Control Techniques Applied to Power Electronics - Modeling, Analysis, and Simulation - Consumer Applications - Other Power Applications


2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


2018 IEEE 18th International Power Electronics and Motion Control Conference (PEMC)

Promote and co-ordinate the exchange and the publication of technical, scientific and economic information in the field of Power Electronics and Motion Control with special focus on countries less involved in IEEE related activities. The main taget is to create a forum for industrial and academic community.

  • 2016 IEEE International Power Electronics and Motion Control Conference (PEMC)

    The IEEE Power Electronics and Motion Control (IEEE-PEMC) conference continues to be the oldest in Europe and is a direct continuation of the conferences held since 1970. Its main goal is to promote and co-ordinate the exchange and publication of technical, scientific and economic information on Power Electronics and Motion Control. One of its main objectives is the cooperation and integration between the long-time divided Western and Eastern Europe, this goal expressed in the conference logo, as well. The conference attracts now a large number (roughly 500+) of participants from the world. An exhibition is organised in parallel with every PEMC Conference, offering space for the industry to present their latest products for Power Electronics and Motion Control. In addition to the regular oral sessions, key notes, round tables, tutorials, workshops, seminars, exhibitions, the dialogue sessions (enlarged “poster” presentations) present to the speakers a better cooperation opportunity.

  • 2014 16th International Power Electronics and Motion Control Conference (PEMC)

    The purpose of the 16th International Power Electronics and Motion Control Conference and Exposition (PEMC) is to bring together researchers, engineers and practitioners from all over the world, interested in the advances of power systems, power electronics, energy, electrical drives and education. The PEMC seeks to promote and disseminate knowledge of the various topics and technologies of power engineering, energy and electrical drives. The PEMC aims to present the important results to the international community of power engineering, energy, electrical drives fields and education in the form of research, development, applications, design and technology. It is therefore aimed at assisting researchers, scientists, manufacturers, companies, communities, agencies, associations and societies to keep abreast of new developments in their specialist fields and to unite in finding power engineering issues.

  • 2012 EPE-ECCE Europe Congress

    Power Electronics and Motion Control.

  • 2010 14th International Power Electronics and Motion Control Conference (EPE/PEMC 2010)

    Semiconductor Devices and Packaging, Power Converters, Electrical Machines, Actuators, Motion Control, Robotics, Adjustable Speed Drives, Application and Design of Power Electronics circuits, Measurements, Sensors, Observing Techniques, Electromagnetic Compatibility, Power Electronics in Transportation, Mechatronics, Power Electronics in Electrical Energy Generation, Transmission and Distribution, Renewable Energy Sources, Active Filtering, Power Factor Correction

  • 2008 13th International Power Electronics and Motion Control Conference (EPE/PEMC 2008)

  • 2006 12th International Power Electronics and Motion Control Conference (EPE/PEMC 2006)


2018 International Conference on Signal Processing and Communications (SPCOM)

SPCOM 2018 will provide a forum for researchers from academia, research laboratories, and industries to come together to share and learn about current developments in emerging areas within the broad fields of signal processing, communications and networking. SPCOM 2018 will be the twelfth in the series of the biennial events that have been organized since 1990 at the Indian Institute of Science (IISc), Bangalore, India.


2017 IEEE/MTT-S International Microwave Symposium - IMS 2017

The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2036 IEEE/MTT-S International Microwave Symposium - IMS 2036

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2031 IEEE/MTT-S International Microwave Symposium - IMS 2031

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2029 IEEE/MTT-S International Microwave Symposium - MTT 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2026 IEEE/MTT-S International Microwave Symposium - IMS 2026

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025

    The IEEE International Microwave Symposium (IMS) is the world s foremost conferencecovering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies;encompassing everything from basic technologies to components to systems including thelatest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulationand more. The IMS includes technical and interactive sessions, exhibits, student competitions,panels, workshops, tutorials, and networking events.

  • 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - IMS 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2020 IEEE/MTT-S International Microwave Symposium - IMS 2020

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2019 IEEE/MTT-S International Microwave Symposium - MTT 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - MTT 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2016 IEEE/MTT-S International Microwave Symposium - IMS 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE/MTT-S International Microwave Symposium - MTT 2015

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.

  • 2009 IEEE/MTT-S International Microwave Symposium - MTT 2009

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2008 IEEE/MTT-S International Microwave Symposium - MTT 2008

  • 2007 IEEE/MTT-S International Microwave Symposium - MTT 2007

  • 2006 IEEE/MTT-S International Microwave Symposium - MTT 2006

  • 2005 IEEE/MTT-S International Microwave Symposium - MTT 2005

  • 2004 IEEE/MTT-S International Microwave Symposium - MTT 2004

  • 2003 IEEE/MTT-S International Microwave Symposium - MTT 2003

  • 2002 IEEE/MTT-S International Microwave Symposium - MTT 2002

  • 2001 IEEE/MTT-S International Microwave Symposium - MTT 2001

  • 2000 IEEE/MTT-S International Microwave Symposium - MTT 2000

  • 1999 IEEE/MTT-S International Microwave Symposium - MTT '99

  • 1998 IEEE/MTT-S International Microwave Symposium - MTT '98

  • 1997 IEEE/MTT-S International Microwave Symposium - MTT '97

  • 1996 IEEE/MTT-S International Microwave Symposium - MTT '96


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Periodicals related to Silicon carbide

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Xplore Articles related to Silicon carbide

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Design and simulation of a planar anode GTO thyristor on SiC

P. Brosselard; D. Planson; S. Scharnholz; V. Zorngiebel; M. Lazar; C. Raynaud; J. -P. Chante; E. Spahn 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2003

4H-SiC asymmetrical gate turn-off (GTO) thyristors have been simulated using the finite element code MEDICI™. The goal of these numerical simulations is a performance analysis of GTO SiC-thyristors having a planar anode. One advantage over the conventional etched anode structure is the avoidance of lithography related problems appearing in the recessed gate groove. From a performance point of view the ...


Application of a Normally OFF Silicon Carbide Power JFET in a Photovoltaic Inverter

Michael S. Mazzola; Robin Kelley 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, 2009

Conventional wisdom that the SiC JFET is only a normally on device has recently been superseded by the first practical normally off SiC JFET. This new true enhancement mode, three-terminal, pure-SiC design provides designers with a normally off solution that retains all the benefits of the normally on SiC JFET. With only a simple change in series gate impedance, the ...


Efficient, High-Temperature Bidirectional Dc/Dc Converter for Plug-in-Hybrid Electric Vehicle (PHEV) using SiC Devices

K. Acharya; S. K. Mazumder; Piotr Jedraszczak 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, 2009

A multiphase all-SiC dc/dc bidirectional converter for plug-in-hybrid electric vehicles (PHEV) is described in this paper that serves as a regulated charger for the intermediate high-voltage energy storage device (e.g. ultracapacitor) in the motoring mode and allows recharging of the batteries during regenerative mode. The primary focus of this paper is to describe the design of the converter and experimentally ...


Multiple Access Interference Suppression for TWSTFT Applications

Yi-Jiun Huang; Hen-Wai Tsao; Huang-Tien Lin; Chia-Shu Liao IEEE Transactions on Instrumentation and Measurement, 2017

Multiple access interference (MAI) is one of the unstable sources of the two- way satellite time and frequency transfer (TWSTFT), and causes an estimation error of the signal arrival time. To suppress MAI, the successive interference cancellation (SIC) procedure is implemented on the software-defined receiver. It generates MAIs and subtracts them from the received signal to become an interference-free signal. ...


Ionisation dead space and the super-APD

G. Rees; J. David The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

In this paper we have seen carriers ionise when the energy gained from the field exceeds the energy loss to phonons by the ionisation threshold energy. Carriers are injected either optically or by impact ionisation, are generated 'cool' and they must travel some distance down the electric field before they 'heat' and their energy distribution achieves equilibrium with the local ...


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Educational Resources on Silicon carbide

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eLearning

Design and simulation of a planar anode GTO thyristor on SiC

P. Brosselard; D. Planson; S. Scharnholz; V. Zorngiebel; M. Lazar; C. Raynaud; J. -P. Chante; E. Spahn 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2003

4H-SiC asymmetrical gate turn-off (GTO) thyristors have been simulated using the finite element code MEDICI™. The goal of these numerical simulations is a performance analysis of GTO SiC-thyristors having a planar anode. One advantage over the conventional etched anode structure is the avoidance of lithography related problems appearing in the recessed gate groove. From a performance point of view the ...


Application of a Normally OFF Silicon Carbide Power JFET in a Photovoltaic Inverter

Michael S. Mazzola; Robin Kelley 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, 2009

Conventional wisdom that the SiC JFET is only a normally on device has recently been superseded by the first practical normally off SiC JFET. This new true enhancement mode, three-terminal, pure-SiC design provides designers with a normally off solution that retains all the benefits of the normally on SiC JFET. With only a simple change in series gate impedance, the ...


Efficient, High-Temperature Bidirectional Dc/Dc Converter for Plug-in-Hybrid Electric Vehicle (PHEV) using SiC Devices

K. Acharya; S. K. Mazumder; Piotr Jedraszczak 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, 2009

A multiphase all-SiC dc/dc bidirectional converter for plug-in-hybrid electric vehicles (PHEV) is described in this paper that serves as a regulated charger for the intermediate high-voltage energy storage device (e.g. ultracapacitor) in the motoring mode and allows recharging of the batteries during regenerative mode. The primary focus of this paper is to describe the design of the converter and experimentally ...


Multiple Access Interference Suppression for TWSTFT Applications

Yi-Jiun Huang; Hen-Wai Tsao; Huang-Tien Lin; Chia-Shu Liao IEEE Transactions on Instrumentation and Measurement, 2017

Multiple access interference (MAI) is one of the unstable sources of the two- way satellite time and frequency transfer (TWSTFT), and causes an estimation error of the signal arrival time. To suppress MAI, the successive interference cancellation (SIC) procedure is implemented on the software-defined receiver. It generates MAIs and subtracts them from the received signal to become an interference-free signal. ...


Ionisation dead space and the super-APD

G. Rees; J. David The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

In this paper we have seen carriers ionise when the energy gained from the field exceeds the energy loss to phonons by the ionisation threshold energy. Carriers are injected either optically or by impact ionisation, are generated 'cool' and they must travel some distance down the electric field before they 'heat' and their energy distribution achieves equilibrium with the local ...


More eLearning Resources

IEEE-USA E-Books

  • Silicon Carbide High Temperature Electronics - Is This Rocket Science?

    This chapter contains sections titled: * Introduction * Advantages of SiC Electronics * Exploration of Venus * Proposed System for Venus Lander * Results * Conclusion

  • Unipolar Power Switching Devices

    In this chapter we discuss two unipolar switching devices, junction field- effect transistors (JFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs), describing the basic physical processes and practical power device implementations. JFETs are presented in both single- and double- gated topologies. We begin the study of MOSFETs by reviewing basic metal- oxide-semiconductor (MOS) electrostatics. We then derive operating equations and discuss practical implementations, including both double-diffused metal- oxide-semiconductor field effect transistors (DMOSFETs) and trench-based UMOSFETs. Finally, we discuss practical issues such as threshold voltage control, inversion layer mobility, oxide reliability, and switching performance.

  • Recent Advances in Power Semiconductor Technology

    This chapter presents recent advances in power semiconductors technology with special attention on wide bandgap (WBG) transistors. A short introduction to the state¿¿¿of¿¿¿the¿¿¿art Silicon power devices is given, and the characteristics of the various SiC power switches are also described. Design considerations of gate and base¿¿¿drive circuits for various SiC power switches along with experimental results of their switching performance are presented in details. Moreover, a section on applications of SiC power devices is also included, where the three design directions (high¿¿¿efficiency, high switching frequency and high¿¿¿temperature) that might be followed using SiC technology are shown. Last but not least, a short overview of Gallium Nitride transistors is presented in the last section of this chapter.

  • Bipolar Power Switching Devices

    This chapter deals with three-terminal bipolar power switching devices. We begin with the bipolar junction transistor (BJT), discussing effects such as saturation and quasi-saturation, second breakdown, the Rittner effect, and the Kirk effect. We then consider the insulated-gate bipolar transistor (IGBT), essentially a merged BJT, and metal-oxide-semiconductor field effect transistor (MOSFET). Here we present a new derivation of the static characteristics and discuss the physical mechanisms that limit switching performance. We conclude with a discussion of thyristors and gate-turn-off (GTO) thyristors, including triggering, quenching, and transient response.

  • Specialized Silicon Carbide Devices and Applications

    The unique characteristics of SiC make it attractive for a variety of applications that are not well served by existing silicon technology. One such application is high-power, moderate-frequency microwave amplifiers and power sources based on devices such as MESFETs (metal-semiconductor field-effect transistors), static induction transistors (SITs), and IMPATT (impact ionization avalanche transit-time) diodes. Another important application involves high-temperature integrated circuits for sensing and control, where SiC bipolar and JFET (junction field-effect transistor) integrated circuits are the preferred implementations. A major emerging opportunity for SiC lies in the area of sensors for hostile environments. Developments to date include MEMS (micro-electro-mechanical sensor) devices for motion sensors, gas sensors for combustion control, and solar-blind UV optical detectors. In each area we describe the application requirements, highlight the advantages of SiC, and report the current status of SiC technology.

  • Introduction

    This chapter discusses the growing economic importance of power electronics and highlights the promise of silicon carbide (SiC) power devices. We briefly review the history of SiC as a wide-bandgap semiconductor, and conclude with an overview of the organization of this book.

  • Epitaxial Growth of Silicon Carbide

    SiC epitaxial growth is used to produce active layers with designed doping density and thickness, because control of doping and thickness in bulk growth is difficult. Homoepitaxial growth technology has shown remarkable progress, with polytype replication and wide-range doping control achieved using step- flow growth and controlling the C/Si ratio, respectively. In this chapter we describe the fundamental aspects and technological developments involved in hexagonal SiC homoepitaxial growth, and briefly discuss heteroepitaxial growth of 3C-SiC.

  • Unipolar and Bipolar Power Diodes

    In this chapter we discuss the most basic power devices: Schottky barrier diodes, pin diodes, and JBS (junction barrier controlled Schottky)/MPS (merged pin Schottky) diodes. We begin by introducing unipolar and bipolar figures-of- merit to characterize device performance. We then consider the physical processes within each device and develop useful design equations, invoking the ambipolar diffusion equation to describe high-level injection in bipolar diodes.

  • Non-Orthogonal Multiple Access (NOMA): Concept and Design

    This chapter introduces the concept of non-orthogonal multiple access (NOMA) for both downlink and uplink channels, where it enables power-domain user multiplexing and the exploitation of the channel-gain difference among users in a cellular system, two features that were not exploited in current and past cellular systems. It also explains the interface-design aspects of NOMA, including multi-user scheduling and multi-user power control, and its combination with multiple-input, multiple-output (MIMO). For downlink NOMA, the chapter shows the link-level performance and system-level performance of NOMA combined with MIMO for OFDMA. For uplink NOMA, it presents a system-level performance comparison of NOMA with SC-frequency division multiple access (FDMA) and show the impact of fractional frequency reuse (FFR). The chapter provides the performance evaluation results based on computer simulations and the measurements obtained from the NOMA testbed. It presents NOMA testbed, the potential gains for both system-level and link-level simulations when NOMA is combined with SU-MIMO.

  • Full-duplex Radios in 5G: Fundamentals, Design and Prototyping

    The proliferation of smartphones, tablet PCs and laptops is continually boosting demand for higher throughput of mobile devices with advanced wireless network capabilities. To support such demand, fifth generation (5G) wireless communications are expected to provide 1000-fold greater throughput than 4G. Full-duplex radios simultaneously transmit and receive in the same frequency band. This chapter is devoted to designing and prototyping of full-duplex communication systems, with emphasis on various self-interference cancellation (SIC) schemes. The goal of digital SIC is to cancel residual self-interference after analog SIC, especially that originated from the non-line-of-sight reflections. Owing to the recent development of software-defined radio (SDR) platforms, prototyping has become a viable option for algorithm researchers. Synchronization is one of the key blocks to implementation of real-time wireless communication systems, especially full-duplex systems. The reference symbol (RS) is essential to estimating the channel for full-duplex radio. Channel estimation is performed for two channels: the self-interference channel and signal-of-interest channel.



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