Silicon carbide

View this topic in
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. (Wikipedia.org)






Conferences related to Silicon carbide

Back to Top

2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

1. Power Electronic Devices (Si and Wide band-gap) and Applications, 2. Power electronic packaging and integration, 3. Modeling, Simulation and EMI, 4. Lighting Technologies and Applications, 5. Wireless Power Transfer, 6. Uncontrolled Rectifiers and AC/DC Converters, 7. AC/AC Converters, 8. DC/AC Inverters, 9. DC/DC Converters, 10. Multilevel Power Converters, 11. Electric Machines, Actuators and Sensors, 12. Motor Control and Drives, 13. Sensorless and Sensor-Reduction Control, 14. Renewable Energy and Distributed Generation Systems, 15. Smart/Micro Grid, 16. DC Distribution 17. Power Quality (or Power Electronics for Utility Interface), 18. Energy Storage and Management Systems, 19. Power Electronics for Transportation Electrification, 20. Reliability, diagnosis, prognosis and protection, 21. High Voltage DC Transmission, 22. Other Selected Topics in Power Electronics

  • 2015 IEEE 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

    Power electronics, renewable energy, electric vehicle, smart grid

  • 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA)

    The seventh International Power Electronics Conference, IPEC-Hiroshima 2014 -ECCE Asia-, will be held from May 18 to May 21, 2014 in Hiroshima, Japan. The conference venue will be the International Conference Center Hiroshima, which is located in Hiroshima Peace Memorial Park. Power electronics has been providing numerous new technologies in the fields of electric energy conversion and motor drive systems for more than 40 years. In recent years, global energy and environmental issues are becoming more serious and power electronics is expected to play a key role in solving such problems. The IPEC-Hiroshima 2014 -ECCE Asia- will provide a unique opportunity for researchers, engineers, and academics from all over the world to present and exchange the latest information on power electronics, motor drives, and related subjects.

  • 2011 IEEE 8th International Conference on Power Electronics & ECCE Asia (ICPE 2011- ECCE Asia)

    01. Power Semiconductor Devices and Packaging 02. Modeling, Simulation, EMI and Reliability 03. Electric Machines, Actuators and Sensors 04. Motor Control and Drives 05. Sensorless Control 06. Renewable Green Energy (Wind, Solar, Tidal Power Generation) 07. Micro Grid and Distributed Generation 08. Electric Propulsion System (EV, Train, Electric Ship) 09. Electric and Hybrid Vehicles 10. Power Supplies and EV Chargers 11. Power Electronics and Drives for Home Appliance 12. Power Elect

  • 2007 7th International Conference on Power Electronics (ICPE)

    - Power Semiconductor Devices - DC-DC Converters - Inverters and Inverter Control Techniques - Motor Drives - Rectifiers and AC-AC Converters - Renewable Energy - Power Quality and Utility Applications - Automotive Applications and Traction Drives - Energy Storage - Control Techniques Applied to Power Electronics - Modeling, Analysis, and Simulation - Consumer Applications - Other Power Applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 13th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

HRI is a highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchersin robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior,anthropology, and many other fields.

  • 2019 14th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2017 12th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    The conference serves as the primary annual meeting for researchers in the field of human-robot interaction. The event will include a main papers track and additional sessions for posters, demos, and exhibits. Additionally, the conference program will include a full day of workshops and tutorials running in parallel.

  • 2016 11th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    This conference focuses on the interaction between humans and robots.

  • 2015 10th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a single -track, highly selective annual conference that showcases the very bestresearch and thinking in human -robot interaction. HRI is inherently interdisciplinary and multidisciplinary,reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificialintelligence, organizational behavior, anthropology, and many other fields.

  • 2014 9th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a highly selective annual conference that showcases the very best research and thinking in human -robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2013 8th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a single -track, highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2012 7th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    HRI is a single-track, highly selective annual conference that showcases the very best research and thinking in human-robot interaction. HRI is inherently interdisciplinary and multidisciplinary, reflecting work from researchers in robotics, psychology, cognitive science, HCI, human factors, artificial intelligence, organizational behavior, anthropology, and many other fields.

  • 2011 6th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    Robot companions Lifelike robots Assistive (health & personal care) robotics Remote robots Mixed initiative interaction Multi-modal interaction Long-term interaction with robots Awareness and monitoring of humans Task allocation and coordination Autonomy and trust Robot-team learning User studies of HRI Experiments on HRI collaboration Ethnography and field studies HRI software architectures HRI foundations Metrics for teamwork HRI group dynamics.

  • 2010 5th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    TOPICS: Robot companions, Lifelike robots, Assistive (health & personal care) robotics, Remote robots, Mixed initiative interaction, Multi-modal interaction, Long-term interaction with robots, Awareness and monitoring of humans, Task allocation and coordination, Autonomy and trust, Robot-team learning, User studies of HRI, Experiments on HRI collaboration, Ethnography and field studies, HRI software architectures

  • 2009 4th ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    * Robot companions * Lifelike robots * Assistive (health & personal care) robotics * Remote robots * Mixed initiative interaction * Multi-modal interaction * Long-term interaction with robots * Awareness and monitoring of humans * Task allocation and coordination * Autonomy and trust * Robot-team learning * User studies of HRI * Experiments on HRI collaboration * Ethnography and field studies * HRI software architectures

  • 2008 3rd ACM/IEEE International Conference on Human-Robot Interaction (HRI)

    Robot companions Lifelike robots Assistive (health & personal care) robotics Remote robots Mixed initiative interaction Multi-modal interaction Long-term interaction with robots Awareness and monitoring of humans Task allocation and coordination Autonomy and trust Robot-team learning User studies of HRI Experiments on HRI collaboration Ethnography and field studies HRI software architectures HRI foundations Metrics for teamwork HRI group dynamics Individual vs. group HRI

  • 2007 2nd Annual Conference on Human-Robot Interaction (HRI)


2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 15th IEEE Annual Consumer Communications & Networking Conference (CCNC)

IEEE CCNC 2018 will present the latest developments and technical solutions in the areas of home networking, consumer networking, enabling technologies (such as middleware) and novel applications and services. The conference will include a peer-reviewed program of technical sessions, special sessions, business application sessions, tutorials, and demonstration sessions


More Conferences

Periodicals related to Silicon carbide

Back to Top

Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


More Periodicals

Most published Xplore authors for Silicon carbide

Back to Top

Xplore Articles related to Silicon carbide

Back to Top

Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module

[{u'author_order': 1, u'affiliation': u'ABB Corporate Research, Forskargränd 7, SE-721 78 Västeräs, Sweden', u'full_name': u'Claudiu Ionita'}, {u'author_order': 2, u'affiliation': u'ABB Corporate Research, Forskargränd 7, SE-721 78 Västeräs, Sweden', u'full_name': u'Muhammad Nawaz'}, {u'author_order': 3, u'affiliation': u'ABB Corporate Research, Forskargränd 7, SE-721 78 Västeräs, Sweden', u'full_name': u'Kalle Ilves'}, {u'author_order': 4, u'affiliation': u'Aalborg University, Department of Energy Technology, Pontoppidanstraede 111, Aalborg, Denmark', u'full_name': u'Francesco Iannuzzo'}] 2017 IEEE Energy Conversion Congress and Exposition (ECCE), None

While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be ...


A two-stage MMSE partial PIC receiver for multiuser detection

[{u'author_order': 1, u'affiliation': u'Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan', u'full_name': u'Wen-Rong Wu'}, {u'author_order': 2, u'full_name': u'Wen-Soo Su'}, {u'author_order': 3, u'full_name': u'Yu-Tao Hsieh'}] Wireless Communications, 2001. (SPAWC '01). 2001 IEEE Third Workshop on Signal Processing Advances in, None

The partial parallel interference cancellation (PIC) detector is considered as an effective yet simple receiver for multiuser detection in code-division multiple access (CDMA) systems. It cancels the multiple access interference (MAI) of the received signal partially resulting from other users. However, the optimal cancellation level which is controlled by a partial cancellation factor (PCF) is usually determined by trial and ...


Design and experimental demonstration of 1.35 kV SiC super junction Schottky diode

[{u'author_order': 1, u'affiliation': u'College of Electrical Engineering, Zhejiang University, Hangzhou, China', u'full_name': u'Xueqian Zhong'}, {u'author_order': 2, u'affiliation': u'College of Electrical Engineering, Zhejiang University, Hangzhou, China', u'full_name': u'Baozhu Wang'}, {u'author_order': 3, u'affiliation': u'College of Electrical Engineering, Zhejiang University, Hangzhou, China', u'full_name': u'Kuang Sheng'}] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), None

This paper presents the first functional SiC super junction devices, SiC SJ Schottky diodes, which substantially improve the trade-off between the breakdown voltage and specific on-resistance in SiC power devices. Processes for fabricating SJ structures by using a trench-etching-and-sidewall-implant method has been developed and a functional SJ Schottky diode has been demonstrated based on this processing method. The measured cell ...


New Nano-Thermal Interface Materials (Nano-TIMs) with SiC Nano-Particles Used for Heat Removal in Electronics Packaging Applications

[{u'author_order': 1, u'affiliation': u'Key Laboratory of Advanced Display and System Applications (Chinese Ministry of Education) and SMIT Center, Shanghai University, Box 282, Yanchang Road 149, Shanghai 200072, P.R. China', u'full_name': u'Wen Xuan Wang'}, {u'author_order': 2, u'affiliation': u'Key Laboratory of Advanced Display and System Applications (Chinese Ministry of Education) and SMIT Center, Shanghai University, Box 282, Yanchang Road 149, Shanghai 200072, P.R. China', u'full_name': u'Xiuzhen Lu'}, {u'author_order': 3, u'affiliation': u'Key Laboratory of Advanced Display and System Applications (Chinese Ministry of Education) and SMIT Center, Shanghai University, Box 282, Yanchang Road 149, Shanghai 200072, P.R. China; SMIT Center & Dept of Microtechnology and Nanoscience, University of Technology, Kemivägen 9, Se-412 96 Göteborg, Sweden. johan.liu@mc2.chalmers.se', u'full_name': u'Johan Liu'}, {u'author_order': 4, u'affiliation': u'SMIT Center & Dept of Microtechnology and Nanoscience, University of Technology, Kemivägen 9, Se-412 96 Göteborg, Sweden', u'full_name': u'Michael Olugbenga Olorunyomi'}, {u'author_order': 5, u'affiliation': u'SMIT Center & Dept of Microtechnology and Nanoscience, University of Technology, Kemivägen 9, Se-412 96 Göteborg, Sweden', u'full_name': u'Tomas Aronsson'}, {u'author_order': 6, u'affiliation': u'Key Laboratory of Advanced Display and System Applications (Chinese Ministry of Education) and SMIT Center, Shanghai University, Box 282, Yanchang Road 149, Shanghai 200072, P.R. China', u'full_name': u'Dongkai Shangguan'}] 2006 International Conference on Electronic Materials and Packaging, None

Heat dissipation of semiconductor packages has become one of the limiting factors in miniaturization. A new Nano Thermal Interface Material (Nano-TIM) with potential high thermal conductivity and excellent mechanical properties manufactured by electrospinning process has been published earlier. In the present work, SiC nano-particles were added into the electrospinning solution to improve the thermal conductivity of the film. The produced ...


Physics of bipolar, unipolar and intermediate conduction modes in Silicon Carbide MOSFET body diodes

[{u'author_order': 1, u'affiliation': u'Wolfspeed, A Cree Company, Research Triangle Park, NC - USA', u'full_name': u'V. Pala'}, {u'author_order': 2, u'affiliation': u'Wolfspeed, A Cree Company, Research Triangle Park, NC - USA', u'full_name': u'E. Van Brunt'}, {u'author_order': 3, u'affiliation': u'Wolfspeed, A Cree Company, Research Triangle Park, NC - USA', u'full_name': u'S. H. Ryu'}, {u'author_order': 4, u'affiliation': u'Wolfspeed, A Cree Company, Research Triangle Park, NC - USA', u'full_name': u'B. Hull'}, {u'author_order': 5, u'affiliation': u'Wolfspeed, A Cree Company, Research Triangle Park, NC - USA', u'full_name': u'S. Allen'}, {u'author_order': 6, u'affiliation': u'Wolfspeed, A Cree Company, Research Triangle Park, NC - USA', u'full_name': u'J. Palmour'}, {u'author_order': 7, u'affiliation': u'National Institute of Standards and Technology, Gaithersburg, MD - USA', u'full_name': u'A. Hefner'}] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), None

This paper details the device physics of Silicon Carbide MOSFETs in third quadrant operation. It is observed that the gate bias has a large effect on controlling the injection efficiency at the anode of the body diode. The change in threshold voltage due to body-effect and the voltage drop across the anode junction play a key role in controlling the ...


More Xplore Articles

Educational Resources on Silicon carbide

Back to Top

eLearning

No eLearning Articles are currently tagged "Silicon carbide"

IEEE-USA E-Books

  • Device Processing of Silicon Carbide

    Many processing steps are required to fabricate complex electronic devices, including doping by ion implantation, patterning, etching, oxidation, passivation, and metallization. The process flow in SiC device fabrication is similar to that in silicon technology but several unique processes, with particular requirements, are also needed because of the unique physical and chemical properties of SiC. This chapter introduces the fundamental aspects and technological development of ion implantation, etching, oxidation, interface passivation, and Schottky and ohmic contacts in SiC.

  • Full-duplex Radios in 5G: Fundamentals, Design and Prototyping

    The proliferation of smartphones, tablet PCs and laptops is continually boosting demand for higher throughput of mobile devices with advanced wireless network capabilities. To support such demand, fifth generation (5G) wireless communications are expected to provide 1000-fold greater throughput than 4G. Full-duplex radios simultaneously transmit and receive in the same frequency band. This chapter is devoted to designing and prototyping of full-duplex communication systems, with emphasis on various self-interference cancellation (SIC) schemes. The goal of digital SIC is to cancel residual self-interference after analog SIC, especially that originated from the non-line-of-sight reflections. Owing to the recent development of software-defined radio (SDR) platforms, prototyping has become a viable option for algorithm researchers. Synchronization is one of the key blocks to implementation of real-time wireless communication systems, especially full-duplex systems. The reference symbol (RS) is essential to estimating the channel for full-duplex radio. Channel estimation is performed for two channels: the self-interference channel and signal-of-interest channel.

  • Unipolar and Bipolar Power Diodes

    In this chapter we discuss the most basic power devices: Schottky barrier diodes, pin diodes, and JBS (junction barrier controlled Schottky)/MPS (merged pin Schottky) diodes. We begin by introducing unipolar and bipolar figures-of- merit to characterize device performance. We then consider the physical processes within each device and develop useful design equations, invoking the ambipolar diffusion equation to describe high-level injection in bipolar diodes.

  • Multisystem Rolling Stocks

    Multisystem rolling stocks employs a traditional configuration for the input stage, which is based on the line frequency transformer and four‐quadrant converters that are tuned to comply with electromagnetic compatibility standards. It is necessary to run the main transformer with different voltage levels and different frequencies, as well as use it as an inductor in the systems. This chapter focuses on the operation of the following multilevel transformers: multivoltage and multifrequency transformers and power electronic traction transformers (PETTs). Multilevel structures allow higher voltage to be adopted in DC section, achieving the goal of increasing the transmittable power with equal transmission losses. The chapter then considers two boost converters whose absorbed current waves have a phase shift of a generic angle. The logical choice for controlling the 4Q converter follows current tracking logic, for which the modulation index m does not appear directly in the control algorithm.

  • Unipolar Power Switching Devices

    In this chapter we discuss two unipolar switching devices, junction field- effect transistors (JFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs), describing the basic physical processes and practical power device implementations. JFETs are presented in both single- and double- gated topologies. We begin the study of MOSFETs by reviewing basic metal- oxide-semiconductor (MOS) electrostatics. We then derive operating equations and discuss practical implementations, including both double-diffused metal- oxide-semiconductor field effect transistors (DMOSFETs) and trench-based UMOSFETs. Finally, we discuss practical issues such as threshold voltage control, inversion layer mobility, oxide reliability, and switching performance.

  • THE FEDERAL GOVERNMENT

    The federal government and its policies can have enormous impact on industry beyond export controls. By 1991, LEOMA had made significant headway with the major issues that had dominated its earliest years. LEOMA coordinated input from the U.S. laser industry so that it presented a coherent and accurate picture of the industry's capability. The North American Industrial Classification System (NAICS) included a category explicitly for lasers, but the proposed subdivisions within that category did not reflect a realistic breakout of industry products. The LEOMA board realized that a Commerce Department survey of domestic and international laser sales could be beneficial, but the proposed survey would not produce useful data. Although LEOMA efforts with the federal government had pretty close to negligible impact on issues such as the research and development tax credit, it had a significant impact in altering the strategies of the national laboratories.

  • General Principles and Basic Algorithms for Full-duplex Transmission

    This chapter studies full-duplex technology from the perspective of signal- processing algorithms and implementation. It explains full-duplex system requirements, self-interference, and self-interference cancellation (SIC) techniques and the related algorithms and implementation challenges. The chapter also shows the current achievements, from SISO, in order to treat the problem from the basics, to MIMO, which still needs further development. SIC techniques in a full-duplex SISO system are classified into four main categories: passive SI suppression in the propagation domain, active SIC in the analog domain, active SIC in the digital domain and auxiliary chain SIC. The required cancellation has to meet certain requirements related to the system specifications, such as the full scale of the analog-to-digital converter (ADC) and noise-floor level. Full-duplex technology offers the potential to participate in the evolution of 5G, and it leads the way toward new mobile generations that have higher capacity, more efficiency and optimal performance.

  • Future Trends

    The parameter optimization for single-phase quasi-Z-source inverters (qZSI) is still an open topic owing to its superior advantages and widespread applications. This chapter presents the future trends of impedance source inverters/converters. A general expectation was demonstrated in terms of the volume and size reduction by applying wide band gap devices; minimization and optimization of impedance source network parameters for the single-phase qZS inverter topology being used as an independent power system and submodule in CMI; novel control methods, especially the MPC to improve the system performance; and future applications for high-power renewable energy power conversion. A comparison of ZSI using traditional Si devices and silicon carbide (SiC) wide band gap devices is further illustrated, verifying the superiority of cooperating modern semiconductor technique. This chapter has mainly provided a technical insight into the future research and development of impedance source inverters/converters.

  • Bipolar Power Switching Devices

    This chapter deals with three-terminal bipolar power switching devices. We begin with the bipolar junction transistor (BJT), discussing effects such as saturation and quasi-saturation, second breakdown, the Rittner effect, and the Kirk effect. We then consider the insulated-gate bipolar transistor (IGBT), essentially a merged BJT, and metal-oxide-semiconductor field effect transistor (MOSFET). Here we present a new derivation of the static characteristics and discuss the physical mechanisms that limit switching performance. We conclude with a discussion of thyristors and gate-turn-off (GTO) thyristors, including triggering, quenching, and transient response.

  • Forensic Radio Surveys for Cell Site Analysis

    Cell site analysis is designed to enable an investigator to determine whether calls made at or around the time of an incident or offence used cells that are located near the location of that offence. Forensic radio surveys are designed to provide solid evidence to back up the assumptions made by investigators and cell site analysts. Forensic radio survey equipment captures details of the cells that can be detected at a location and can indicate which cells would be selected for use by a phone being used at those locations. Forensic radio surveys add empirical rigour to an area of investigation that would otherwise fall prey to assumptions and wishful thinking. Cell site analysis, based on a combination of call detail record (CDR), cell location details and forensic radio survey results, can provide compelling evidence to support the allegations made by investigators.



Standards related to Silicon carbide

Back to Top

No standards are currently tagged "Silicon carbide"


Jobs related to Silicon carbide

Back to Top