Silicon carbide

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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. (Wikipedia.org)






Conferences related to Silicon carbide

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2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013)

Power conversion and motor drives in the green energy era.


2013 International Semiconductor Conference (CAS 2013)

The aim of the conference is two-fold. First, it provides a forum of debate on selected topics of sientific research and technological development. On the other hand, this is an occasion for refreshing a broad perspective of the participants through invited papers and tutorials.The Conference is underlying the development in micro-and nanotechnologies, still maintaining the “traditional” connection with semiconductor electronics.

  • 2012 International Semiconductor Conference (CAS 2012)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in micro- and nano-technologies, physics, design, technology (including semiconductor materials and microelectronics) and application of semiconductor devices and materials.

  • 2011 International Semiconductor Conference (CAS 2011)

    The aim of the conference is to bring together scientists and engineers actively engaged in the field of solid state devices and technologies. CAS intends to provide a forum for presentation and discussion of the main achievements in physics, design, technology and application of semiconductor devices and materials.

  • 2010 International Semiconductor Conference (CAS 2010)

    The Conference is underlying the development in micro-and nanotechnologies, still maintaining the traditional connection with semiconductor electronics



Periodicals related to Silicon carbide

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Industry Applications, IEEE Transactions on

The development and application of electric systems, apparatus, devices, and controls to the processes and equipment of industry and commerce; the promotion of safe, reliable, and economic installations; the encouragement of energy conservation; the creation of voluntary engineering standards and recommended practices.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...




Xplore Articles related to Silicon carbide

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Options for shielding Tokamak Cooling Water electrical components against high magnetic fields

Kofi Korsah; Michael Smith; Seokho Kim; Charles Neumeyer 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

The Tokamak Cooling Water System (TCWS) Instrumentation and Control (I&C) components of ITER will be located in areas of relatively high magnetic fields. Previous tests on electrical and I&C components have indicated that shielding will be required to protect these components from such magnetic fields. To accomplish this, studies were performed by AREVA Federal Services (AFS) in support of the ...


Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches

Hongbin Pu; Zhiming Chen; Xianfeng Feng; Baoshan Ma; Liuchen Li Junction Technology, 2004. IWJT '04. The Fourth International Workshop on, 2004

The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two- dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been ...


Structural Analysis of Longitudinal Si–C–N Precipitates in Multicrystalline Silicon

Stefan Köstner; Angelika Hähnel; Rajmund Mokso; Horst Blumtritt; Peter Werner IEEE Journal of Photovoltaics, 2013

During crystallization of multicrystalline silicon, carbon-rich liquid-solid phase-boundary layers appear, resulting in precipitation of n-type conductive Si-C-N filaments. We present an in-depth structural analysis of distinct types of filaments to support modeling of their growth. Phase-contrast microtomography down to the submicron level is used to study morphology and seeding of precipitates while still embedded in fully functional solar cell samples. ...


Optimal decoding order and power allocation in multimedia CDMA networks with imperfect successive interference cancellation

Tao Shu; Zhisheng Niu The 57th IEEE Semiannual Vehicular Technology Conference, 2003. VTC 2003-Spring., 2003

In this paper, we study the influence of decoding order on the capacity of multimedia DS-CDMA systems with imperfect successive interference cancellation. In contrast to previous studies, cancellation errors are assumed to be different for different users in this work. For any given decoding order, we derive the necessary power allocation that guarantee the QoS of the multimedia traffic. Based ...


Multiple Access Interference Suppression for TWSTFT Applications

Yi-Jiun Huang; Hen-Wai Tsao; Huang-Tien Lin; Chia-Shu Liao IEEE Transactions on Instrumentation and Measurement, 2017

Multiple access interference (MAI) is one of the unstable sources of the two- way satellite time and frequency transfer (TWSTFT), and causes an estimation error of the signal arrival time. To suppress MAI, the successive interference cancellation (SIC) procedure is implemented on the software-defined receiver. It generates MAIs and subtracts them from the received signal to become an interference-free signal. ...


More Xplore Articles

Educational Resources on Silicon carbide

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eLearning

Options for shielding Tokamak Cooling Water electrical components against high magnetic fields

Kofi Korsah; Michael Smith; Seokho Kim; Charles Neumeyer 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

The Tokamak Cooling Water System (TCWS) Instrumentation and Control (I&C) components of ITER will be located in areas of relatively high magnetic fields. Previous tests on electrical and I&C components have indicated that shielding will be required to protect these components from such magnetic fields. To accomplish this, studies were performed by AREVA Federal Services (AFS) in support of the ...


Simulation of a near infrared light-activated 4H-SiC Darlington transistor switches

Hongbin Pu; Zhiming Chen; Xianfeng Feng; Baoshan Ma; Liuchen Li Junction Technology, 2004. IWJT '04. The Fourth International Workshop on, 2004

The novel near infrared light-activated Darlington heterojunction transistor power switch made of SiC has been proposed, in which SiCGe/SiC pn is employed to produce a base current by means of optical illumination. By using two- dimensional numerical simulation MEDICI, the SiCGe/SiC photodetector can be triggered by a near infer-red laser beam if the composition parameters of the Sil-x-yCxGey have been ...


Structural Analysis of Longitudinal Si–C–N Precipitates in Multicrystalline Silicon

Stefan Köstner; Angelika Hähnel; Rajmund Mokso; Horst Blumtritt; Peter Werner IEEE Journal of Photovoltaics, 2013

During crystallization of multicrystalline silicon, carbon-rich liquid-solid phase-boundary layers appear, resulting in precipitation of n-type conductive Si-C-N filaments. We present an in-depth structural analysis of distinct types of filaments to support modeling of their growth. Phase-contrast microtomography down to the submicron level is used to study morphology and seeding of precipitates while still embedded in fully functional solar cell samples. ...


Optimal decoding order and power allocation in multimedia CDMA networks with imperfect successive interference cancellation

Tao Shu; Zhisheng Niu The 57th IEEE Semiannual Vehicular Technology Conference, 2003. VTC 2003-Spring., 2003

In this paper, we study the influence of decoding order on the capacity of multimedia DS-CDMA systems with imperfect successive interference cancellation. In contrast to previous studies, cancellation errors are assumed to be different for different users in this work. For any given decoding order, we derive the necessary power allocation that guarantee the QoS of the multimedia traffic. Based ...


Multiple Access Interference Suppression for TWSTFT Applications

Yi-Jiun Huang; Hen-Wai Tsao; Huang-Tien Lin; Chia-Shu Liao IEEE Transactions on Instrumentation and Measurement, 2017

Multiple access interference (MAI) is one of the unstable sources of the two- way satellite time and frequency transfer (TWSTFT), and causes an estimation error of the signal arrival time. To suppress MAI, the successive interference cancellation (SIC) procedure is implemented on the software-defined receiver. It generates MAIs and subtracts them from the received signal to become an interference-free signal. ...


More eLearning Resources

IEEE-USA E-Books

  • A Hybrid Silicon Carbide Differential Amplifier for 350C Operation

    An operational amplifier has been designed, fabricated, and tested at 350°C using silicon carbide MESFET pairs and thick film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350°C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high temperature circuit design and assembly using silicon carbide MESFET's and thick film hybrid technology.

  • The Characterization of High Temperature Electronics for Future Aircraft Engine Digital Electronic Control Systems

    The characterization of high temperature electronics is presented including high temperature effects, semiconductors and barrier metallizations. Design solutions and material selections for mitigation of high temperature effects are indicated. The following semiconductor materials are considered as future high temperature candidates: - Silicon (Si) - Gallium arsenide (GaAs) - Gallium phosphide (GaP) - Silicon carbide (SiC) - Diamond like carbon (C) This characterization was originally prepared in accordance with the USAF Future Advance Controls Technology Study (FACTS).

  • Appendix A: Incomplete Dopant Ionization in 4H-SiC

    No abstract.

  • Unipolar Power Switching Devices

    In this chapter we discuss two unipolar switching devices, junction field- effect transistors (JFETs) and metal-oxide-semiconductor field effect transistors (MOSFETs), describing the basic physical processes and practical power device implementations. JFETs are presented in both single- and double- gated topologies. We begin the study of MOSFETs by reviewing basic metal- oxide-semiconductor (MOS) electrostatics. We then derive operating equations and discuss practical implementations, including both double-diffused metal- oxide-semiconductor field effect transistors (DMOSFETs) and trench-based UMOSFETs. Finally, we discuss practical issues such as threshold voltage control, inversion layer mobility, oxide reliability, and switching performance.

  • Appendix B: Properties of the Hyperbolic Functions

    No Abstract.

  • Bipolar Power Switching Devices

    This chapter deals with three-terminal bipolar power switching devices. We begin with the bipolar junction transistor (BJT), discussing effects such as saturation and quasi-saturation, second breakdown, the Rittner effect, and the Kirk effect. We then consider the insulated-gate bipolar transistor (IGBT), essentially a merged BJT, and metal-oxide-semiconductor field effect transistor (MOSFET). Here we present a new derivation of the static characteristics and discuss the physical mechanisms that limit switching performance. We conclude with a discussion of thyristors and gate-turn-off (GTO) thyristors, including triggering, quenching, and transient response.

  • Analysis of Silicon Carbide Power Device Performance

    The purpose of this paper is to define the drift region properties of SiC based rectifiers and MOSFETs to achieve breakdown voltages ranging from 50 to 5000 volts. Using these values, the output characteristics of these devices have been calculated. It has been found that 5000 volt SiC Schottky rectifiers and power MOSFETs would operate with a forward drop of less than 2 volts due to the very low drift region resistance. This value is superior to even that for silicon P-i-N rectifiers and Gate-Turn-Off Thyristors. This is the FIRST time that it has been shown that SiC based devices could outperform the entire spectrum of silicon based power devices.

  • Appendix C: Major Physical Properties of Common SiC Polytypes

    No abstract.

  • Frontmatter

    This chapter contains sections titled: Half-Title Page Title Page Copyright Page Table of Contents About the Authors Preface

  • Optimization and Comparison of Power Devices

    We begin this chapter with a discussion of avalanche breakdown and blocking voltage in power devices, which leads naturally into a survey of edge termination techniques. We then discuss the optimum design of unipolar drift regions in devices such as Schottky diodes, JFETs (junction field-effect transistors), and MOSFETs (metal-oxide-semiconductor field effect transistors), with a brief discussion of lateral RESURF (reduced-surface- field) devices. Finally, we present a consistent methodology for optimizing and comparing unipolar and bipolar devices for a particular set of specifications (i.e., blocking voltage and switching frequency).



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