Silicon

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Silicon is the most common metalloid. (Wikipedia.org)






Conferences related to Silicon

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2017 54th ACM/EDAC/IEEE Design Automation Conference (DAC)

The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2022 59th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2021 58th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2020 57th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2018 55th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2015 52nd ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC Description for TMRF The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading

  • 2013 50th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 session on design methodologies and EDA tool developments, keynotes, panels, plus User Track presentations. A diverse worldwide community representing more than 1,000 organization attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.

  • 2012 49th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers

  • 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference is the world s leading technical conference and tradeshow on electronic design and design automation. DAC is where the IC Design and EDA ecosystem learns, networks, and does business.

  • 2010 47th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 200 of the leading electronics design suppliers.

  • 2009 46th ACM/EDAC/IEEE Design Automation Conference (DAC)

    DAC is the premier event for the electronic design community. DAC offers the industry s most prestigious technical conference in combination with the biggest exhibition, bringing together design, design automation and manufacturing market influencers.

  • 2008 45th ACM/EDAC/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier event for the design of electronic circuits and systems, and for EDA and silicon solutions. DAC features a wide array of technical presentations plus over 250 of the leading electronics design suppliers.

  • 2007 44th ACM/IEEE Design Automation Conference (DAC)

    The Design Automation Conference (DAC) is the premier Electronic Design Automation (EDA) and silicon solution event. DAC features over 50 technical sessions covering the latest in design methodologies and EDA tool developments and an Exhibition and Demo Suite area with over 250 of the leading EDA, silicon and IP Providers.


2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .


2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2014 IEEE 45th Semiconductor Interface Specialists Conference (SISC)

The SISC provides a unique forum for device engineers, solid-state physicists, and materials scientists to discuss issues of common interest. Principal topics for discussion at SISC are semiconductor/insulator interfaces, the physics of insulating thin films, and the interaction among materials science, device physics, and state-of-the-art technology.


2013 14th International Conference on Ultimate Integration on Silicon (ULIS)

The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2011 12th International Conference on Ultimate Integration on Silicon (ULIS)

    ULIS is an annual conference that regroups the European research community working on advanced silicon devices and nanodevices. It has been held annually since 2000. The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modelling, simulation and characterisation of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2009 10th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices in the More Moore, More than Moore and Beyond CMOS domains.

  • 2008 9th International Conference on Ultimate Integration on Silicon (ULIS)

    The aim of the ULIS Conference is to provide an open forum for the presentation and discussion of recent research in technology, physics, modeling, simulation and characterization of advanced nanoscale silicon and silicon compatible devices for switches, memory and novel applications such as sensors and bioelectronics.


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Periodicals related to Silicon

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Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Selected Topics in Quantum Electronics, IEEE Journal of

40% devoted to special issues published in J. Quantum Electronics. Other topics: solid-state lasers, fiber lasers, optical diagnostics for semi-conductor manufacturing, and ultraviolet lasers and applications.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.


Solid-State Circuits, IEEE Journal of

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as device modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete ...




Xplore Articles related to Silicon

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Development of low-bandgap Ge and Si<sub>0.07</sub>Ge<sub>0.93</sub> solar cells for monolithic and mechanically-stacked cascade applications

R. Venkatasubramanian; M. L. Timmons; R. T. Pickett; T. S. Colpitts; J. S. Hils; J. A. Hutchby; P. A. Hes; C. L. Chu IEEE Conference on Photovoltaic Specialists, 1990

Ge and Si0.07Ge0.93 materials are suitable for cascade solar cell applications in tandem with ~1.6 eV top cells in 1- and 100-sun space photovoltaic arrays. Ge homojunction cell performance, measured undo Spectrolab XT-10 and Hoffman simulators, is presented. Short-circuit current densities of as much as 70.5 mA/cm2 have been measured under the XT-10, suggesting excellent photocollection from the epitaxially grown ...


Time division adaptive retransmission for reducing signal impairments in portable radiotelephones

D. C. Cox IEEE Transactions on Vehicular Technology, 1983

Multiple-antenna receiving diversity was shown previously to be effective in mitigating the effects of random angular orientation and multipath radio propagation for portable radiotelephones. It is shown that time-division adaptive retransmission used with appropriate antenna configurations can also mitigate these effects. The retransmission configurations require fewer antennas than the receiving diversity configurations for a given improvement in relative signal-to-noise ratio ...


AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

L. DiNetta; G. H. Negley; M. H. Hannon; J. R. Cummings; J. B. McNeely; A. M. Barnett IEEE Conference on Photovoltaic Specialists, 1990

Free-standing, transparent, tunables bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four-terminal tandem stack solar cell. The device has 1.8 eV top solar cells with efficiencies of 18% (100X, AM0), which would yield stack efficiencies of 31% (100X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-x As/Si mechanically stacked two-junction solar cell ...


Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Di Han; Jukkrit Noppakunkajorn; Bulent Sarlioglu 2013 IEEE Transportation Electrification Conference and Expo (ITEC), 2013

With the advancement of technology on wide bandgap materials such as silicon- carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional Si devices. However, the ...


Strongly Compensated Silicon-Based Sensitive Photo Receives of Infrared Radiation of Novel Design

K. S. Ayupov; D. Bobonov; K. Haydarov; M. K Bahadirhanov; D. B. Sharafutdinova 2006 2nd IEEE/IFIP International Conference in Central Asia on Internet, 2006

Thus, we have been able to demonstrate, that one can develop and design novel type strongly compensated silicon, type p- Si<B, Mn>-based highly sensitive and low inertia infrared photo receivers operating within the range of lambda = 3-1,1 micron in the existing integral lighting.


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Educational Resources on Silicon

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eLearning

Development of low-bandgap Ge and Si<sub>0.07</sub>Ge<sub>0.93</sub> solar cells for monolithic and mechanically-stacked cascade applications

R. Venkatasubramanian; M. L. Timmons; R. T. Pickett; T. S. Colpitts; J. S. Hils; J. A. Hutchby; P. A. Hes; C. L. Chu IEEE Conference on Photovoltaic Specialists, 1990

Ge and Si0.07Ge0.93 materials are suitable for cascade solar cell applications in tandem with ~1.6 eV top cells in 1- and 100-sun space photovoltaic arrays. Ge homojunction cell performance, measured undo Spectrolab XT-10 and Hoffman simulators, is presented. Short-circuit current densities of as much as 70.5 mA/cm2 have been measured under the XT-10, suggesting excellent photocollection from the epitaxially grown ...


Time division adaptive retransmission for reducing signal impairments in portable radiotelephones

D. C. Cox IEEE Transactions on Vehicular Technology, 1983

Multiple-antenna receiving diversity was shown previously to be effective in mitigating the effects of random angular orientation and multipath radio propagation for portable radiotelephones. It is shown that time-division adaptive retransmission used with appropriate antenna configurations can also mitigate these effects. The retransmission configurations require fewer antennas than the receiving diversity configurations for a given improvement in relative signal-to-noise ratio ...


AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

L. DiNetta; G. H. Negley; M. H. Hannon; J. R. Cummings; J. B. McNeely; A. M. Barnett IEEE Conference on Photovoltaic Specialists, 1990

Free-standing, transparent, tunables bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four-terminal tandem stack solar cell. The device has 1.8 eV top solar cells with efficiencies of 18% (100X, AM0), which would yield stack efficiencies of 31% (100X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-x As/Si mechanically stacked two-junction solar cell ...


Efficiency comparison of SiC and Si-based bidirectional DC-DC converters

Di Han; Jukkrit Noppakunkajorn; Bulent Sarlioglu 2013 IEEE Transportation Electrification Conference and Expo (ITEC), 2013

With the advancement of technology on wide bandgap materials such as silicon- carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional Si devices. However, the ...


Strongly Compensated Silicon-Based Sensitive Photo Receives of Infrared Radiation of Novel Design

K. S. Ayupov; D. Bobonov; K. Haydarov; M. K Bahadirhanov; D. B. Sharafutdinova 2006 2nd IEEE/IFIP International Conference in Central Asia on Internet, 2006

Thus, we have been able to demonstrate, that one can develop and design novel type strongly compensated silicon, type p- Si<B, Mn>-based highly sensitive and low inertia infrared photo receivers operating within the range of lambda = 3-1,1 micron in the existing integral lighting.


More eLearning Resources

IEEE-USA E-Books

  • Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies

    Trade-off between ON-state Voltage Drop and Switching Losses Parallel and Coupled PIN Diode-PNP Transistor Model of Carrier Distribution in the ON State of Trench IGBT Non-self-aligned Trench IGBT for Superior ON-state Performance Dynamic N-buffer Insulated Gate Bipolar Transistor (DB-IGBT) Lateral IGBT with Reverse Blocking Capability Lateral IGBT with High-temperature Latchup Immunity Self-aligned Sidewall-implanted N+-emitter Lateral IGBT (Si-ligbt) with High Latchup Current Capability Improved LIGBT Structure for Larger FBSOA Lateral IGBT with Integrated Current Sensor Dielectrically Isolated Fast LIGBTs Lateral IGBT in Thin Silicon-on-insulator (SOI) Substrate Lateral Trench-gate Bipolar Transistor (LTGBT) for Improved Latchup Characteristics Trench Planar Insulated Gate Bipolar Transistor (TPIGBT) Clustered Insulated Gate Bipolar Transistor in Homogeneous Base Technology (HB-CIGBT) Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) Double-gate Injection-enhanced Gate Transistor (DG-IEGT) SiC IGBTs Summary and Trends Review Exercises References Appendix 10.1 Electron Current at the Collector Junction Appendix 10.2 Transient Base Stored Charge Qbase(t) Appendix 10.3 Depletion Width in the Presence of Mobile Carrier Concentration Appendix 10.4 Modulated Base Resistance (Rb) Appendix 10.5 ON-state Voltage Drop Due to Recombination in the End Regions of the PIN Diode in the IGBT Appendix 10.6 Energy Loss Appendix 10.7 Excess Carrier Concentration p w in the N-Base of TIGBT at the Emitter End Appendix 10.8 ON-state Voltage Drop Across the N- Base of IGBT

  • Pushing the Limit: The Rise of High Temperature Electronics

    This chapter contains sections titled: Industry Activity Silicon Devices Capacitors Wires and Wirebonds Solders PCBs and Substrates Plastic Encapsulants and Housings Conclusion

  • Mixed Signals, Technology and Techniques

    A practical guide to the successful integration of digital and analog circuits Mixed-signal processing-the integration of digital and analog circuitry within computer systems-enables systems to take signals from the analog world and process them within a digital system. In fact, recent advances in VLSI technology performance now allow for the integration of digital and analog circuits on a single chip, a process that requires the use of analog pre- and post-processing systems such as converters, filters, sensors, drivers, buffers, and actuators. However, the lack of universal CAD tools for the synthesis, simulation, and layout of the analog part of the chip represents a design bottleneck of today's VLSI circuits. Mixed-Signal Systems: A Guide to CMOS Circuit Design presents a comprehensive general overview of the latest CMOS technology and covers the various computer systems that may be used for designing integrated circuits. Taking an original approach to one- and two- dimensional filter design, the author explores the many digital-oriented design systems, or silicon compilers, currently being used, and presents the basic methods, procedures, and tools used by each. In a thorough and systematic manner, the text: * Presents common features of digital-oriented design systems * Describes methods and tools that are not yet being applied in any compiler * Illustrates image processing systems that can be implemented on a single chip * Demonstrates the path from synthesis methods to the actual silicon assembly Essential reading for integrated circuit designers and developers of related computer programs, as well as advanced students of system design, this book represents an invaluable resource for anyone involved in the development of mixed-signal systems.

  • About the Authors

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  • A Fully Integrated SiGe Receiver IC for 10Gb/s Data Rate

    A silicon germanium (SiGe) receiver IC is presented here which integrates most of the 10-Gb/s SONET receiver functions. The receiver combines an automatic gain control and clock and data recovery circuit (CDR) with a binary-type phase-locked loop, 1 : 8 demultiplexer, and a 27 - 1 pseudorandom bit sequence generator for self-testing. This work demonstrates a higher level of integration compared to other silicon designs as well as a CDR with SONET- compliant jitter characteristics. The receiver has a die size of 4.5 x 4.5 mm2 and consumes 4.5 W from -5 V.

  • Better To Fail Hopefully&#x2026;

    Silicon Valley, a small place with few identifiable geologic or geographic features, has achieved a mythical reputation in a very short time. The modern material culture of the Valley may be driven by technology, but it also encompasses architecture, transportation, food, clothing, entertainment, intercultural exchanges, and rituals.Combining a reporter's instinct for a good interview with traditional archaeological training, Christine Finn brings the perspectives of the past and the future to the story of Silicon Valley's present material culture. She traveled the area in 2000, a period when people's fortunes could change overnight. She describes a computer's rapid trajectory from useful tool to machine to be junked to collector's item. She explores the sense that whatever one has is instantly superseded by the next new thing -- and the effect this has on economic and social values. She tells stories from a place where fruit-pickers now recycle silicon chips and where more money can be made babysitting for post-IPO couples than working in a factory. The ways that people are working and adapting, are becoming wealthy or barely getting by, are visible in the cultural landscape of the fifteen cities that make up the area called "Silicon Valley."

  • Exploiting Device Physics in Circuit Design for Efficient Computational Functions in Analog VLSI

    This chapter contains sections titled: Introduction Technology and Devices Current-Mode Approach Translinear Principle Contrast-Sensitive Silicon Retina Discussion This chapter contains sections titled: Appendix A Bipolar Transistor Model References

  • The PDP Perspective

    McClelland and Rumelhart's Parallel Distributed Processing was the first book to present a definitive account of the newly revived connectionist/neural net paradigm for artificial intelligence and cognitive science. While Neural Computing Architectures addresses the same issues, there is little overlap in the research it reports. These 18 contributions provide a timely and informative overview and synopsis of both pioneering and recent European connectionist research. Several chapters focus on cognitive modeling; however, most of the work covered revolves around abstract neural network theory or engineering applications, bringing important complementary perspectives to currently published work in PDP.In four parts, chapters take up neural computing from the classical perspective, including both foundational and current work; the mathematical perspective (of logic, automata theory, and probability theory), presenting less well-known work in which the neuron is modeled as a logic truth function that can be implemented in a direct way as a silicon read only memory. They present new material both in the form of analytical tools and models and as suggestions for implementation in optical form, and summarize the PDP perspective in a single extended chapter covering PDP theory, application, and speculation in US research. Each part is introduced by the editor.

  • Social Strife

    Silicon Valley, a small place with few identifiable geologic or geographic features, has achieved a mythical reputation in a very short time. The modern material culture of the Valley may be driven by technology, but it also encompasses architecture, transportation, food, clothing, entertainment, intercultural exchanges, and rituals.Combining a reporter's instinct for a good interview with traditional archaeological training, Christine Finn brings the perspectives of the past and the future to the story of Silicon Valley's present material culture. She traveled the area in 2000, a period when people's fortunes could change overnight. She describes a computer's rapid trajectory from useful tool to machine to be junked to collector's item. She explores the sense that whatever one has is instantly superseded by the next new thing -- and the effect this has on economic and social values. She tells stories from a place where fruit-pickers now recycle silicon chips and where more money can be made babysitting for post-IPO couples than working in a factory. The ways that people are working and adapting, are becoming wealthy or barely getting by, are visible in the cultural landscape of the fifteen cities that make up the area called "Silicon Valley."

  • Neoliberal Networks at the Periphery

    In Networking Peripheries, Anita Chan shows how digital cultures flourish beyond Silicon Valley and other celebrated centers of technological innovation and entrepreneurship. The evolving digital cultures in the Global South vividly demonstrate that there are more ways than one to imagine what digital practice and global connection could look like. To explore these alternative developments, Chan investigates the diverse initiatives being undertaken to "network" the nation in contemporary Peru, from attempts to promote the intellectual property of indigenous artisans to the national distribution of digital education technologies to open technology activism in rural and urban zones.Drawing on ethnographic accounts from government planners, regional free-software advocates, traditional artisans, rural educators, and others, Chan demonstrates how such developments unsettle dominant conceptions of information classes and innovations zones. Government efforts to turn rural artisans into a new creative class progress alongside technology activists' efforts to promote indigenous rights through information tactics; plans pressing for the state wide adoption of open source--based technologies advance while the One Laptop Per Child initiative aims to network rural classrooms by distributing laptops. As these cases show, the digital cultures and network politics emerging on the periphery do more than replicate the technological future imagined as universal from the center.



Standards related to Silicon

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No standards are currently tagged "Silicon"