Silicon

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Silicon is the most common metalloid. (Wikipedia.org)






Conferences related to Silicon

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2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 14th IEEE/ASME International Conference on Mechatronic and Embedded Systems and Applications (MESA)

The goal of the 14th ASME/IEEE MESA2018 is to bring together experts from the fields of mechatronic and embedded systems, disseminate the recent advances in the area, discuss future research directions, and exchange application experience. The main achievement of MESA2018 is to bring out and highlight the latest research results and developments in the IoT (Internet of Things) era in the field of mechatronics and embedded systems.


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


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Periodicals related to Silicon

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Xplore Articles related to Silicon

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Preparation of novel SiGe-free strained Si on insulator substrates

[{u'author_order': 1, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Langdo'}, {u'author_order': 2, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Lochtefeld'}, {u'author_order': 3, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Currie'}, {u'author_order': 4, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Hammond'}, {u'author_order': 5, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Yang'}, {u'author_order': 6, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Carlin'}, {u'author_order': 7, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Vineis'}, {u'author_order': 8, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Braithwaite'}, {u'author_order': 9, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Badawi'}, {u'author_order': 10, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Bulsara'}, {u'author_order': 11, u'affiliation': u'AmberWave Syst. Corp., Salem, NH, USA', u'full_name': u'Fitzgerald'}] 2002 IEEE International SOI Conference, 2002

A novel SiGe-free SSOI substrate technology has been described. This method enables the fabrication of well controlled, epitaxially-defined, thin strained Si layers directly on insulator layers. Tensile strain levels of greater than 1% have been demonstrated in these structures, and are not diminished after thermal anneal cycles. The strain-inducing relaxed SiGe layer is absent from the final structure, eliminating some ...


CMOS devices strained-silicon technology

[{u'author_order': 1, u'full_name': u'Yee-Chia Yeo'}, {u'author_order': 2, u'full_name': u'H.C.-H. Wang'}] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

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Enhancing CMOS Transistor Performance Using Lattice-Mismatched Materials in Source/Drain Regions

[{u'author_order': 1, u'affiliation': u'Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore. Phone: +65 6516-2298, Fax: +65 6779 1103, Email: yeo@ieee.org', u'full_name': u'Yee-Chia Yeo'}] 2006 International SiGe Technology and Device Meeting, 2006

Strain engineering using lattice-mismatched S/D in transistors and their combination with other stressors and optimum surface/channel orientations is very attractive and important for the continued improvement of CMOS performance in addition to device scaling


CMOS Devices - Strained Silicon

[] 2006 International Electron Devices Meeting, 2006

None


Ion-beam hydrogenation of sputter-deposited amorphous silicon and amorphous silicon-germanium alloys

[{u'author_order': 1, u'affiliation': u'Colorado Sch. of Mines, Golden, CO, USA', u'full_name': u'X.J. Deng'}, {u'author_order': 2, u'full_name': u'Y.S. Tsuo'}, {u'author_order': 3, u'full_name': u'J.U. Trefny'}] IEEE Conference on Photovoltaic Specialists, 1990

The posthydrogenation of undoped and boron-doped amorphous silicon and amorphous silicon-germanium alloys was studied using a Kaufman ion-beam source. These materials were deposited in a two-source radio frequency (RF) excited argon plasma sputter-deposition system. After ion-beam posthydrogenation, the optical bandgap of amorphous silicon-germanium alloys increased from about 1.12 eV to 1.47 eV, and the material has an air mass one ...


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Educational Resources on Silicon

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eLearning

No eLearning Articles are currently tagged "Silicon"

IEEE-USA E-Books

  • Supplementary Study on Buried Oxide Characterization:

    This chapter proposes a macroscopic physical model for the buried oxide having a transition layer in a SIMOX substrate to estimate the parasitic capacitance. The Clausius-Mossotti relationship for two media is introduced into the model, employing an empirical factor to match with a high-frequency response. Peaks in the capacitance dependence on frequency appear only in devices with the buried oxide having a transition layer. This property can be explained by the proposed model. It is also shown that the transition layer adjacent to buried oxide should be eliminated to reduce parasitic capacitance. [©1992 IEEE. Reprinted, with permission, from Y. Omura and K. Izumi, A macroscopic physical model and capacitive response of the buried oxide having a transition layer in a SIMOX substrate,_IEEE Transactions on Electron Devices_, vol. 39, pp. 1916-1921, 1992.]

  • Experimental Consideration for Modeling of Lubistor Operation

    An experimental characterization of Lubistors has been carried out through the employment of SIMOX technology and the following results were obtained: (i) An oxygen-doped silicon (ODS) layer should be placed between the upper silicon layer and buried oxide layer to achieve the original Lubistor characteristic; that is, anode-to-cathode current is cut off by enhancement-mode gate bias.(ii) In the Lubistor's_ON_state, a large potential drop exists only near a high-low junction terminal, which must be supported by the depletion layer. (iii) In the Lubistor's_OFF_state, a large potential drop exists near a pn- junction terminal, which must also be supported by the depletion layer. A simplified analysis is carried out to clarify the Lubistor's operation mechanism. A theoretical model is used to qualitatively support experimental results.

  • Negative Conductance Properties in Extremely Thin SOI Lubistors

    In this chapter the occurrence of negative conductance at temperatures of less than 90 K in an SOI Lubistor with a 10-nm-thick silicon layer fabricated on a SIMOX substrate is reported. Through comparison with the performance of an SOI Lubistor with a 90-nm-thick silicon layer, the advantages of the two- dimensional confinement effect are shown. [Copyright 1996. The Japan Society of Applied Physics. Y. Omura, Negative conductance properties in extremely thin silicon-on-insulator (SOI) insulated-gate pn-junction devices (SOI surface tunnel transistors),_Japanese Journal of Applied Physics_, vol. 35, pp. L1401-L1403, 1996.]

  • Modern Applications of the pn Junction

    This chapter reviews various applications of the pn junction from the viewpoint of a future extention of applications.

  • Possible Implementation of SOI Lubistors into Conventional Logic Circuits

    Possible application of the SOI Lubistor to logic circuits is reviewed. TFET- based logic and conventional CMOS logic configuration are introduced.

  • Highly Nonlinear and Microstructured Fibers

    None

  • Supplementary Consideration of Characteristics of Forward-Biased Ultra-Thin Lubistors

    In this chapter, the low-temperature behavior of forward-biased Lubistors fabricated with a 10-nm-thick silicon-on-insulator (SOI) layer is described. At low temperature, a step-like current oscillation is observed that depends on gate voltage. It is also demonstrated that the effective activation energies of generation-recombination centers are shallower than expected from the theoretical calculations in Chapter 12.

  • Planar Onboard EBG Filters for Common Mode Current Reduction

    This chapter reviews the role of common mode (CM) filters in high‐density printed circuit board (PCB) designs and the previously analyzed beneficial properties of the electromagnetic bandgap (EBG) structures. It introduces the concept of a CM filter based on patch resonant cavities and the operating principle underlying the construction of EBG‐based CM filters. The main goal of the chapter is to introduce the design approach that has to be used in the building of EBG‐based CM filters, and in particular the attention is focused on the so‐called onboard filters. The chapter describes different design strategies and states proper considerations in order to target the EBG filter to specific design purposes, such as the improvement of the filter attenuation and bandwidth, or to minimize the occupied surface. Finally, it describes the main advantages and disadvantages of the considered structures so that the optimum design solution can be implemented.

  • EM Topology for Interference Control

    Interference control for large systems is complicated because of the physical and electrical complexity of the systems. This chapter discusses electromagnetic topology and its relation to interference control. It covers the various aspects involved in partitioning of systems by nested enclosures and topological concepts to preserve shielding integrity. The chapter introduces the concept of nested enclosures, and shows the proper techniques of passing grounds and other conductors through the shield. It also discusses the effects of apertures on shielding effectiveness and shows how shielding effectiveness can be degraded by fields diffusing through conductive surfaces. Apertures are usually required for access such as windows and doors, ventilation, and a host of other facility requirements. These apertures must be designed so that access is provided without compromising the electromagnetic compatibility of the system. The chapter includes a design example to calculate the voltage induced in a metallic loop placed on a spherical shield of different metals.

  • Noise Characteristics and Modeling of Lubistor

    This chapter describes the noise characteristics of various SOI Lubistors with anode-offset regions. The static characteristics of these devices are modeled for the noise analysis; the model is composed of a series of a MOSFET and the pn junction. It is shown experimentally that the noise power of the devices is proportional to_I__A__n_(_n_> 0), where_I__A_is the anode current. Since the noise characteristics are not explained by conventional theory, a new model based of a phenomenological consideration is proposed. It is shown that the proposed basic model, which is compatible with the conventional Hooge model, can explain the experimental results. The influence of the anode-offset length is also discussed and modeled. [Reprinted with permission from S. Wakita and Y. Omura,_Journal of Applied Physics_, vol. 91, p. 2143, 2002. Copyright 2002, American Institute of Physics.]



Standards related to Silicon

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