Silicon

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Silicon is the most common metalloid. (Wikipedia.org)






Conferences related to Silicon

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2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 14th IEEE/ASME International Conference on Mechatronic and Embedded Systems and Applications (MESA)

The goal of the 14th ASME/IEEE MESA2018 is to bring together experts from the fields of mechatronic and embedded systems, disseminate the recent advances in the area, discuss future research directions, and exchange application experience. The main achievement of MESA2018 is to bring out and highlight the latest research results and developments in the IoT (Internet of Things) era in the field of mechatronics and embedded systems.


2018 15th International Workshop on Advanced Motion Control (AMC)

1. Advanced Motion Control2. Haptics, Robotics and Human-Machine Systems3. Micro/Nano Motion Control Systems4. Intelligent Motion Control Systems5. Nonlinear, Adaptive and Robust Control Systems6. Motion Systems for Robot Intelligence and Humanoid Robotics7. CPG based Feedback Control, Morphological Control8. Actuators and Sensors in Motion System9. Motion Control of Aerial/Ground/Underwater Robots10. Advanced Dynamics and Motion Control11. Motion Control for Assistive and Rehabilitative Robots and Systems12. Intelligent and Advanced Traffic Controls13. Computer Vision in Motion Control14. Network and Communication Technologies in Motion Control15. Motion Control of Soft Robots16. Automation Technologies in Primary Industries17. Other Topics and Applications Involving Motion Dynamics and Control


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


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Periodicals related to Silicon

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Aerospace and Electronic Systems Magazine, IEEE

The IEEE Aerospace and Electronic Systems Magazine publishes articles concerned with the various aspects of systems for space, air, ocean, or ground environments.


Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Biomedical Circuits and Systems, IEEE Transactions on

The Transactions on Biomedical Circuits and Systems addresses areas at the crossroads of Circuits and Systems and Life Sciences. The main emphasis is on microelectronic issues in a wide range of applications found in life sciences, physical sciences and engineering. The primary goal of the journal is to bridge the unique scientific and technical activities of the Circuits and Systems ...


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


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Xplore Articles related to Silicon

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Exponential Residue Codes

[{u'author_order': 1, u'affiliation': u'Naval Undersea Center San Diego, CA 92132', u'full_name': u'J. M. Alsup'}, {u'author_order': 2, u'full_name': u'J. M. Speiser'}] IEEE Transactions on Aerospace and Electronic Systems, 1975

This note describes a class of pulse compression codes which were discovered by examining the properties of the prime transform algorithm [1]. For each prime P, phase hop sequences of length P-1 can be constructed whose periodic autocorrelation functions have constant sidelobe height of -1 relative to the main peak value of P-1.


On the measurement of parasitic capacitances of device with more than two external terminals using an LCR meter

[{u'author_order': 1, u'affiliation': u'Intel Corp., Santa Clara, CA, USA', u'full_name': u'W. W. Lin'}, {u'author_order': 2, u'affiliation': u'Intel Corp., Santa Clara, CA, USA', u'full_name': u'P. C. Chan'}] IEEE Transactions on Electron Devices, 1991

A general methodology of directly measuring parasitic capacitance using an LCR meter in devices with more than two terminals is discussed. It is concluded that the accuracy of the measurement cannot be guaranteed in such devices since it is dependent on the internal structure of the device. This is demonstrated using the conventional (bulk silicon) MOSFET structure, showing that substrate ...


Corrections to "The Susceptivity of MTI Systems to White Noise"

None IEEE Transactions on Aerospace and Electronic Systems, 1975

None


A wideband 700–1000 MHz short-pulse SiC 300W power amplifier

[{u'author_order': 1, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'V. V. Baranov'}, {u'author_order': 2, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'A. A. Kishchinsky'}, {u'author_order': 3, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'A. D. Matveev'}, {u'author_order': 4, u'affiliation': u'Microwave Systems JSC 11, Nizhnyaya Syromyatnicheskaya Str. Moscow, 105120, Russia', u'full_name': u'G. B. Polyakov'}] 2010 20th International Crimean Conference "Microwave & Telecommunication Technology", None

Results of design and experimental investigation of 700-1000 MHz SiC short- pulsed amplifier with output power upper 300W are presented in this article.


Effects of phase and thickness of cobalt silicide on field emission properties of silicon emitters

[{u'author_order': 1, u'affiliation': u'Dept. of Metall. Eng., Yonsei Univ., Seoul, South Korea', u'full_name': u'Young Joon Yoon'}, {u'author_order': 2, u'full_name': u'Gi Bum Kim'}, {u'author_order': 3, u'full_name': u'Eung Joon Chi'}, {u'author_order': 4, u'full_name': u'Jae Yeob Shim'}, {u'author_order': 5, u'full_name': u'Hong Koo Baik'}] Vacuum Microelectronics Conference, 1998. Eleventh International, None

Cobalt silicide emitters showed the enhanced emission properties in I-V characteristics and long-term current stability, compared to bare silicon emitters. They are mainly caused by the increase of emission area and the formation of chemically stable surface of silicide emitters. Detailed results about the effects of phase and thickness of cobalt silicide on electron emission are discussed.


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Educational Resources on Silicon

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eLearning

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IEEE-USA E-Books

  • General Requirements and Services

    This chapter contains sections titled: Non‐Functional Requirements Name Service Event Service Log Service FileSystem File

  • The System of Units and the measurement standards

    The system of measurement units is a subject with a highly conventional content, susceptible to changes with the technological evolution, and with legislative implications, which compel to express relations and definitions in words. This chapter considers the structure and general features of a coherent unit system, such as Systeme International d'unites (SI) from a general theoretical point of view. It then analyzes the SI in detail and also considers the basic units in their formal and most substantial aspects, looking for the underlying mathematical relations beyond the wording of definitions. The chapter outlines the perspective of short-term evolution of the system. It addresses the role of the standards and the problem of realizing a measurement unit and describes that its solution is applied to the basic and other important units to obtain the primary standards and the unit dissemination.

  • Magnetic Materials and Planar Transmission Lines

    This chapter begins with a physical investigation of the behavior of magnetic materials before delving into some particular applications of the magnetic effects. It presents the physics of magnetic materials and of magnetized magnetic materials. When a material is magnetized and RF magnetic fields are in the plane perpendicular to the magnetization the effective relative permeability can be large and can even be negative. The relative permeability can even be different depending on the direction of magnetic fields. This effect is exploited in realizing nonreciprocal components such as circulators and isolators. Magnetically biased ferrites and garnets, both of which are ferrimagnetic materials, have relatively low loss, and substrates and thin films of certain ferrites and garnets are used as substrates for planar transmission lines. The chapter also describes the frequency selective limiter (FSL) and transmission lines using metaconductors.

  • Sentences with Two Qualifiers

    This chapter focuses on the use of two qualifiers in a sentence. Two qualifiers can appear in a sentence in seven distinct ways. Seven sentence forms are presented in the chapter. For the first four, the two qualifiers are separated by all or part of the core. For the remainder of the two-qualifier sentence forms, the two qualifiers appear consecutively, either before, after, or within the core. The chapter provides examples for these sentence forms. In all these examples, the following convention will be used to distinguish the two qualifiers in each sentence: the first qualifier will be underlined once and the second qualifier will be underlined twice. When two qualifiers appear consecutively, two possibilities arise: (1) Both consecutive qualifiers modify elements within the core; (2) The second qualifier modifies an element within the first qualifier. Nested qualifiers are a subset of two consecutive qualifiers.

  • Introduction

    This chapter discusses the growing economic importance of power electronics and highlights the promise of silicon carbide (SiC) power devices. We briefly review the history of SiC as a wide-bandgap semiconductor, and conclude with an overview of the organization of this book.

  • Recent Advances in Power Semiconductor Technology

    This chapter presents recent advances in power semiconductors technology with special attention on wide bandgap (WBG) transistors. A short introduction to the state¿¿¿of¿¿¿the¿¿¿art Silicon power devices is given, and the characteristics of the various SiC power switches are also described. Design considerations of gate and base¿¿¿drive circuits for various SiC power switches along with experimental results of their switching performance are presented in details. Moreover, a section on applications of SiC power devices is also included, where the three design directions (high¿¿¿efficiency, high switching frequency and high¿¿¿temperature) that might be followed using SiC technology are shown. Last but not least, a short overview of Gallium Nitride transistors is presented in the last section of this chapter.

  • Power Semiconductor Devices for Hvdc and Facts Systems

    Power semiconductor devices are the key components in power converters for High Voltage Direct Current Transmission (HVDC) and Flexible Alternating Current Transmission Systems (FACTS). They have quite complex semiconductor structure and can behave as unipolar and bipolar conducting or blocking devices in response to the gate signal and thus the flow of current in the circuit can be controlled. Thus, electrical energy flow through HVDC and FACTS systems can be accurately controlled. The diode is the only semiconductor device that does not have a gate signal and the conduction or blocking state is solely determined by the polarity of the voltage across. HVDC power transmission technology evolution is directly dependent on the progress of semiconductor power devices. The technological advancement of thyristor (THY) and isolated gate bipolar transistor (IGBT) has accelerated the growth of Line¿¿¿commutated converter (LCC)/Current¿¿¿sourced converter (CSC)¿¿¿HVDC and voltage¿¿¿sourced converter (VSC)¿¿¿HVDC systems, respectively.

  • Physical Properties of Silicon Carbide

    SiC crystallizes in a variety of polytypes, each with unique electrical, optical, thermal, and mechanical properties. The physical properties of SiC are important subjects of academic study, as well as critical parameters for accurate simulation and design of devices. In this chapter we review the important physical properties of SiC.

  • Quantization

    This chapter contains sections titled: Signal Quantization Dither Spectrum Shaping of Quantization - Noise Shaping Number Representation Java Applet - Quantization, Dither, and Noise Shaping Exercises References

  • Overview

    Quantum effects have been studied extensively in the field of compound semiconductor materials because many compound semiconductor materials demonstrate the direct interband transition applicable to optoelectronics. The molecular beam epitaxial technique has greatly assisted such applications by making it possible to propose and demonstrate nonconventional semiconductor devices. Light¿¿¿emitting diodes (LEDs), semiconductor lasers, and resonant transistors showing differential negative conductance properties have been examined and developed. The feature size of Si metal oxide semiconductor field¿¿¿effect transistors (MOSFETs) reached 100¿¿¿nm or so at the research level in the 1990s, and silicon¿¿¿on¿¿¿insulator (SOI) substrates with sub¿¿¿100¿¿¿nm thick ultrathin Si films were created for laboratory testing. This encouraged the study of Si device technologies that used quantum effects because they were seen as breakthroughs that could overwhelm various technical barriers. This chapter introduces the latest works that elucidate the possibility of realizing the device performance needed in the twenty¿¿¿first century.



Standards related to Silicon

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