Conferences related to Resistors

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2013 IEEE Aerospace Conference

The international IEEE Aerospace Conference is organized to promote interdisciplinary understanding of aerospace systems, their underlying science and technology, and their applications to government and commercial endeavors. The annual, weeklong conference, set in a stimulating and thought -provoking environment, is designed for aerospace experts, academics, military personnel, and industry leaders.

  • 2012 IEEE Aerospace Conference

    The international IEEE Aerospace Conference is organized to promote interdisciplinary understanding of aerospace systems, their underlying science and technology, and their applications to government and commercial endeavors. The annual, weeklong conference, set in a stimulating and thought-provoking environment, is designed for aerospace experts, academics, military personnel, and industry leaders.

  • 2011 IEEE Aerospace Conference

    The international IEEE Aerospace Conference is organized to promote interdisciplinary understanding of aerospace systems, their underlying science and technology, and their applications to government and commercial endeavors.

  • 2010 IEEE Aerospace Conference

    The international IEEE Aerospace Conference is organized to promote interdisciplinary understanding of aerospace systems, their underlying science and technology, and their applications to government and commercial endeavors.

  • 2009 IEEE Aerospace Conference

    The international IEEE Aerospace Conference promotes interdisciplinary understanding of aerospace systems, their underlying science and technology, and their applications to government and commercial endeavors. It is an annual, week-long conference designed for aerospace experts, academics, military personnel, and industry leaders and is set in a stimulating, thought-provoking environment.

  • 2008 IEEE Aerospace Conference

    The international IEEE Aerospace Conference is organized to promote interdisciplinary understanding of aerospace systems, their underlying science and technology, and their applications to government and commercial endeavors. It is an annual, week-long conference designed for aerospace experts, academics, military personnel, and industry leaders and is set in a stimulating and thought-provoking environment.

  • 2007 IEEE Aerospace Conference

  • 2006 IEEE Aerospace Conference


2006 IEEE Workshop on Microelectronics and Electron Devices (WMED)


1999 18th Capacitor and Resistor Technology Symposium (CARTS '99)


1998 18th Capacitor and Resistor Technology Symposium (CARTS '98)


1996 Capacitor and Resistor Technology Symposium - (CARTS)



Periodicals related to Resistors

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Resistors

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20A trapezoidal reference current pulse generator for the evaluation of current transducers

Miguel Cerqueira Bastos; Michele Martino; Gustavo Cesar Uicich; Pablo Daniel Antoszczuk; John R. P. Pickering 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), 2013

The design and evaluation of a high precision pulsed current source for the dynamic characterisation of shunts and burden resistors is described. This generator uses a set of current mirrors based on ratio resistor networks to amplify a 10 mA DC current reference and to subsequently generate a pulse by means of a complementary pulse approach. Simulations and preliminary results ...


Development of multifunction international roughness index and profile measuring device

Bandit Suksawat 2011 11th International Conference on Control, Automation and Systems, 2011

The development of a low cost multifunction measuring device is required for reduction of operation time and procedure in pavement quality inspection. This work aims to develop a multifunction international roughness index and profile measuring device. The developed device consists of hardware and software components. For the hardware components, open chain five bar linkage was designed for installation of variable ...


Antialiasing filter for NSDM codec

Juliusz Godek; Ryszard Golanski; Jacek Kolodziej 2008 International Conference on Signals and Electronic Systems, 2008

A consideration for an analog antialiasing filter performance, addressed to a nonuniform sampling coding technique was described. The filer prototype design and its implementations are presented. The Sallen-Key architecture based on CMOS inverters and the solution of achieving resistor formed by transmission gates with long MOSFETs are presented. Finally the simulation results are discussed.


A Low Ripple Current Mode Voltage Doubler

Andrzej Grodzicki; Witold Pleskacz 2015 IEEE 18th International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2015

Experimental results of a fully integrated low ripple charge pump voltage converter are presented. The pump is a current mode voltage doubler with a novel parasitic capacitance precharge mechanism for output voltage ripple reduction. A prototype of the pump was designed and fabricated in 130 nm CMOS process. The pump supplied with 1.2 V delivers 1.5 V on its output. ...


Accuracy and Limitations of the Resistor Network Used for Solving Laplace's and Poisson's Equations

J. R. Hechtel; J. A. Seeger Proceedings of the IRE, 1961

A resistor network developed for the solution of electron-optical problems is described. New, improved methods for simulating arbitrary boundary conditions with high accuracy are given. The sources of error are discussed. The error is defined by the dislocation of an equipotential, as determined with the network, from its correct position. It is measured in units of the distance between two ...


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Educational Resources on Resistors

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eLearning

20A trapezoidal reference current pulse generator for the evaluation of current transducers

Miguel Cerqueira Bastos; Michele Martino; Gustavo Cesar Uicich; Pablo Daniel Antoszczuk; John R. P. Pickering 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), 2013

The design and evaluation of a high precision pulsed current source for the dynamic characterisation of shunts and burden resistors is described. This generator uses a set of current mirrors based on ratio resistor networks to amplify a 10 mA DC current reference and to subsequently generate a pulse by means of a complementary pulse approach. Simulations and preliminary results ...


Development of multifunction international roughness index and profile measuring device

Bandit Suksawat 2011 11th International Conference on Control, Automation and Systems, 2011

The development of a low cost multifunction measuring device is required for reduction of operation time and procedure in pavement quality inspection. This work aims to develop a multifunction international roughness index and profile measuring device. The developed device consists of hardware and software components. For the hardware components, open chain five bar linkage was designed for installation of variable ...


Antialiasing filter for NSDM codec

Juliusz Godek; Ryszard Golanski; Jacek Kolodziej 2008 International Conference on Signals and Electronic Systems, 2008

A consideration for an analog antialiasing filter performance, addressed to a nonuniform sampling coding technique was described. The filer prototype design and its implementations are presented. The Sallen-Key architecture based on CMOS inverters and the solution of achieving resistor formed by transmission gates with long MOSFETs are presented. Finally the simulation results are discussed.


A Low Ripple Current Mode Voltage Doubler

Andrzej Grodzicki; Witold Pleskacz 2015 IEEE 18th International Symposium on Design and Diagnostics of Electronic Circuits & Systems, 2015

Experimental results of a fully integrated low ripple charge pump voltage converter are presented. The pump is a current mode voltage doubler with a novel parasitic capacitance precharge mechanism for output voltage ripple reduction. A prototype of the pump was designed and fabricated in 130 nm CMOS process. The pump supplied with 1.2 V delivers 1.5 V on its output. ...


Accuracy and Limitations of the Resistor Network Used for Solving Laplace's and Poisson's Equations

J. R. Hechtel; J. A. Seeger Proceedings of the IRE, 1961

A resistor network developed for the solution of electron-optical problems is described. New, improved methods for simulating arbitrary boundary conditions with high accuracy are given. The sources of error are discussed. The error is defined by the dislocation of an equipotential, as determined with the network, from its correct position. It is measured in units of the distance between two ...


More eLearning Resources

IEEE-USA E-Books

  • Electrical Safety Aspects of the Resistance Property of Materials

    Electrical shock is caused by the passage of electrical current through the body. Electrical burns can be among the most severe because the current passes through the body and internal organs. The amount of current that flows through the body is estimated in many sources as the ratio of the applied voltage to the resistance to current flow presented by the human body. This chapter examines the phenomenon of body resistance and its inverse, body conductance. In the case of shock hazards, circuit resistance in combination with body resistance will help to determine the magnitude and duration of the exposure to voltage and current. The hazards associated with high power industrial resistors are primarily due to their open construction, which is necessary for cooling. The chapter talks about sheet resitivity, spreading resistance, particle conductivity, and cable resistance.

  • Hybrid Microcircuitry for 300 Operation

    Microelectronic instrumentation for geothermal well logging must operate in ambient temperatures up to 300°C for several hundred hours. This study involved an extensive survey of 25 to 300°C operation of resistors, capacitors, conductors, interconnections, and active devices. Three major selection criteria were: 1) part lifetime of at least 1000 h at 300°C; 2) minimum change in electrical parameters from 25 to 300°C; 3) availability to the common circuit builder (no one of a kind). Certain thick film resistors, capacitors, and conductors were found compatible with such high-temperature operation. In addition, reconstituted mica and aluminum solid electrolytic capacitors were found useful up to 300°C. Simple circuits for a geothermal temperature logging tool have been fabricated using these hybrid materials, components, and Si MOS and JFET devices. Oven tests show satisfactory stability from 25 to 300°C and at least 100-h circuit operation at 300°C.

  • Surface Waves on Passive Surfaces of Finite Extent

    This chapter contains sections titled: Introduction Model The Infinite Array Case The Finite Array Case Excited by Generators The Element Currents on a Finite Array Excited by an Incident Wave How the Surface Waves are Excited on a Finite Array How to Obtain the Actual Current Components The Bistatic Scattered Field from a Finite Array Parametric Study How to Control Surface Waves Fine Tuning the Load Resistors at a Single Frequency Variation with Angle of Incidence The Bistatic Scattered Field Previous Work On Scattering from Faceted Radomes Effects of Discontinuities in the Panels Scanning in the E Plane Effect of a Groundplane Common Misconceptions Concerning Element Currents on Finite Arrays Conclusion Problems

  • Investigations in Thick Film Components for High Temperature Systems

    In the near future electronic systems and circuits which are able to work at high temperatures will be used for sensor and actuator applications, especially where cooling is not possible or very difficult. A second reason for developing high temperature sensor systems is to avoid long signal ways between sensor and signal processing electronic in order to improve EMC- properties. Using thick film hybrid technology provides an easy way of constructing high temperature electronics. But normally thick film components are not specified for temperatures higher than 423 K. Our goal is to characterize and to optimize thick film components for a large temperature range. In order to get information about high temperature behaviour, it is necessary to use suitable testing techniques. This report will introduce some methods like linear test or step stress test which allow accelerated life tests in order to extract the temperature coefficient as well as the behaviour of degradation. In case of thick films, results for preselections can be easily obtained. Results of examined thick film resistors tested up to 773 K will be presented as an example.

  • Fabrication of Passive Components for HighTemperature Instrumentation

    Thin-film resistors and capacitors have been fabricated for use in geothermal well-logging tools. The resistors can operate from 25°C-500°C with a temperature coefficient below 100 ppm/°C; capacitors can operate from 25°C-350°C with a similar temperature coefficient. Chemical vapor deposition (CVD) is used to fabricate both resistors and capacitors. The processing is compatible with most microcircuit processes; and resistors, capacitors, interconnecting metallization, and passivation are all produced by CVD and can be integrated on a single substrate. Resistor material is tungsten-silicon, capacitor electrodes and metallization are tungsten, and dielectric material is silicon nitride. Photolithography is used to delineate component geometry.

  • Extension of HighTemperature Electronics

    Commercial and Sandia fabricated silicon MOSFET's, thick-film resistors and capacitors, and magnetic components were investigated in an effort to increase the versatility of microelectronics usedat 300°C and to form a foundation for a higher temperature technology. Commerical MOSFET's were found susceptible to parameter drifts and have unacceptable electrical characteristics when tested at 300°C, whereas redesigned low alkali impurity devices were able to maintain stable operation at 300°C for 1000 h with improved characteristics. Thus, although MOSFET's are prone to aging, it is possible to use fabrication procedures which allow MOSFET use at high temperature. A specially developed ceramic filled, high silica frit dielectric thick-film material exhibited a sufticiently high resistivity to pennit development of 300°C, 1.0 F capacitors. Procedures were developed to make this material compatible with the multilayer brick capacitor fonnat which is necessary for miniaturization. Both this dielectric and a ruthenium-based resistor material were shown useful to 500°C. In addition, a spectrum of magnetic components was qualified for use at 500°C.

  • Practical Selection of Components

    This chapter contains sections titled: Introduction Resistors Capacitors and their Usage Schottky Diodes Rectifier Diodes Transistors: BJTs Transistors: MOSFETs Op Amps Comparators References

  • Passive Filters

    Passive filters use passive components, such as inductors, capacitors, and resistors. These cannot increase the signal energy; the frequency range for harmonic filters is limited to approximately 3000 Hz. The single-tuned (ST) filters are efficient filters and will bypass a certain harmonic to which these are tuned. These are most widely used filters in all applications of harmonic mitigation. Bandpass filter is a new breed of filters for harmonics. The filtering performance of type C filters lies between that of second-order and third-order filters. Zigzag transformers and delta-wye transformers act as zero sequence traps when connected in the neutral circuit of a three-phase four-wire system. Transfer function approach using Laplace transform is one method of passive filter designs. The application of computer optimization techniques in power systems is a powerful analytical tool, reaching new dimensions with new algorithm for reliability, speed, and applicability.

  • DC grid power flow control devices

    This chapter presents an overview of DC power flow control devices (DCPFCs) and the effects of DCPFCs on DC grids. There are mainly three types of DCPFCs to realize the flexible power flow control: DC transformers, variable series resistors (VSR), and series voltage sources (SVS). DC transformers are shunt connected devices, while VSR and SVS are series connected devices. The chapter describes the topologies of power flow control devices and provides generic modeling of DCPFCs for power flow calculation of DC grids and the sensitivity analysis. It presents some case studies using a five-terminal DC grid with these facilities and case tests to investigate effects of DCPFCs on a DC grid based on the CIGRE test system. The chapter also provides a comparison of DCPFCs. Comparisons of the three devices have been made in terms of the control flexibility, the power rating, and power losses.

  • Thermal Degradation and Termination Behavior of Thick Film Resistors

    Thermal stability was measured for Du Pont 1420 (102 ohims/square), Du Pont 1440 (104 ohms/square), Cermalloy 540 (104 ohms/square), and Cermalloy 550 (105 ohms/square) thick film resistor materials. Samples were aged at 200, 300 and 400°c. In addition, effects of resistor-conductor termination area, laser trimming, and applied bias voltage on thermal stability were evaluated. For 200 and 300°C exposure, the sheet resistivity increased for all materials. Maximum increase after 5000 hours exposure as +8%. For 400°C exposure, sheet resistivity decreased for all materials. Maximum decrease was -20% for 5000 hours exposure. The termination region had no significant effect on either asfired resistance or thermal degradation behavior. Laser trimming tended to stabilize resistors slightly and applied bias voltage had no significant effect.



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