Conferences related to Resistance

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power

2018 14th IEEE/ASME International Conference on Mechatronic and Embedded Systems and Applications (MESA)

The goal of the 14th ASME/IEEE MESA2018 is to bring together experts from the fields of mechatronic and embedded systems, disseminate the recent advances in the area, discuss future research directions, and exchange application experience. The main achievement of MESA2018 is to bring out and highlight the latest research results and developments in the IoT (Internet of Things) era in the field of mechatronics and embedded systems.

2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies

2018 31st IEEE International System-on-Chip Conference (SOCC)

System on Chip

2018 Conference on Precision Electromagnetic Measurements (CPEM 2018)

CPEM is the most important scientific and technological conference in the domain of electromagnetic measurements at the highest accuracy levels. This conference covers the frequency range from DC to the optical region.2018 is expected to be a watershed year in the history of the international system of units (SI), with the adoption of the new definitions for the kilogram, the ampere, the kelvin and the mole. All the SI units will then be based on a set of seven defining constants. CPEM 2018 will provide a privileged opportunity to mark this milestone of the SI through a natural focus on quantum devices that relate electrical measurement standards to fundamental constants of physics. CPEM 2018 will also be the place to share knowledge on research in electromagnetic metrology focused on present and future challenges regarding industry and society in sectors such as Energy, ICT, quantum engineering, Industry 4.0, etc.

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Periodicals related to Resistance

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.

Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission

Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.

Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.

Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.

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Most published Xplore authors for Resistance

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Xplore Articles related to Resistance

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A measurement on contact resistance and surface profile of arcing Ag contacts

[{u'author_order': 1, u'affiliation': u'Tohoku Univ., Sendai, Japan', u'full_name': u'H. Sone'}, {u'author_order': 2, u'full_name': u'H. Sugimoto'}, {u'author_order': 3, u'full_name': u'T. Takagi'}] Proceedings of IEEE Holm Conference on Electrical Contracts, 1994

The arc duration, the contact resistance, and the electrode surface profile were measured at every operation in order to observe the detailed relationship between them. The amount of loss or gain of an electrode was also calculated from the change of the electrode surface profile. In the case where the arc duration was short and ended within the metallic phase, ...

Electrical and Mechanical Properties of Strands in Superconducting Triplets

[{u'author_order': 1, u'full_name': u'K. Nakamura'}, {u'author_order': 2, u'full_name': u'T. Takao'}, {u'author_order': 3, u'full_name': u'A. Nishimura'}] IEEE Transactions on Applied Superconductivity, 2006

Contact resistance on strands is an important parameter for characterizing stability of cable-in-conduit conductors. We prepared triplets made of three strands with four different twist pitches (25, 50, 65 mm and untwisted). The electrical and mechanical properties of the strands were measured, after cycling 10 times with a peak force of 667 N/m. The contact area between the strands could ...

The sidewall resistor—A novel test structure to reliably extract specific contact resistivity

[{u'author_order': 1, u'affiliation': u'Stanford University, Stanford, CA', u'full_name': u'W.M. Loh'}, {u'author_order': 2, u'full_name': u'P.J. Wright'}, {u'author_order': 3, u'full_name': u'T.A. Schreyer'}, {u'author_order': 4, u'full_name': u'S.E. Swirhun'}, {u'author_order': 5, u'full_name': u'K.C. Saraswat'}, {u'author_order': 6, u'full_name': u'J.D. Meindl'}] IEEE Electron Device Letters, 1986

Conventional contact resistance extraction structures suffer inaccuracies when measuring small values of contact resistivity which are sensitive to small perturbations in device fabrication. This is because two-dimensional current crowding around the periphery of the contact window introduces parasitic resistance components which are not accounted for by the one-dimensional model and which can be much larger than the contact resistance component ...

Breakdowns in the Metal-Semimetal BiSb Point Contacts

[{u'author_order': 1, u'affiliation': u'Tel.: +38 057 720 33 95, e-mail:', u'full_name': u'O.N. Sukhoruchko'}, {u'author_order': 2, u'full_name': u'V.T. Plaksiy'}, {u'author_order': 3, u'full_name': u'A.S. Tishchenko'}, {u'author_order': 4, u'affiliation': u'Kharkov National university, Kharkov 61077, Svobody Sq. 4. Tel.: +38 057 705 12 62', u'full_name': u'A.V. Dyadchenko'}] 2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW), 2007

The current-voltage characteristics (CVC) and the breakdown effects in the metal-semimetal BiSb (bismuth and stibium alloys) point contacts have been investigated to determine the power rating of the radiation scattered by the sample. The CVCs of the contacts exhibit breakdowns provoking the appearance of the negative differential S-resistance areas. Based on the breakdown voltage magnitude one can determine the power ...

Current capacity evaluation of a cantilever probe

[{u'author_order': 1, u'affiliation': u'ON Semiconductor, SCG Industries Malaysia Sdn Bhd, Lot. 55, Senawang Industrial Estate, 70450 Seremban, Negeri Sembilan, W. Malaysia', u'full_name': u'Lester Jacob Thomas'}, {u'author_order': 2, u'affiliation': u'ON Semiconductor, SCG Industries Malaysia Sdn Bhd, Lot. 55, Senawang Industrial Estate, 70450 Seremban, Negeri Sembilan, W. Malaysia', u'full_name': u'Hon Kiet Kow'}, {u'author_order': 3, u'affiliation': u'ON Semiconductor, SCG Industries Malaysia Sdn Bhd, Lot. 55, Senawang Industrial Estate, 70450 Seremban, Negeri Sembilan, W. Malaysia', u'full_name': u'Selvam Palasundram'}] 2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT), 2008

The tungsten-rhenium (WRe) 3mil cantilever probe is widely used in wafer probe at ON Semiconductors. The maximum current that can be supplied to a DUT is restricted by the current capacity of the probe needles. A typical 3 mil tip probe can carry 2 - 3 Amps at a short burst current (I short) for a <;10 ms pulse time. ...

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Educational Resources on Resistance

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No eLearning Articles are currently tagged "Resistance"


  • Measurement of Grounding

    This chapter introduces the methods and instruments for grounding resistance measurement, the factors Influencing the result of fall‐of‐potential method, including the influence of overhead ground wires, the measurement method of potential distribution, and corrosion diagnosis method for grounding Grid.

  • Array Elements

    This chapter contains sections titled:DipolesWaveguide SlotsTEM HornsMicrostrip Patches and DipolesAcknowledgmentsReferences

  • Fundamental Concepts of Grounding

    This chapter introduces the fundamental concepts of grounding, including conduction mechanism of soil, function of grounding device, grounding resistance, and allowable potential difference for body safety.

  • A Low‐Cost IoT Framework for Landslide Prediction and Risk Communication

    A landslide, that is, collapse of a mass of earth or rock from a mountain or cliff, is a common phenomenon in hills. Landslides pose a large threat to life and infrastructure and there is a need to develop low‐cost sensing frameworks that could help in monitoring landslides and alert people before they occur. Certain existing technologies have been used for monitoring landslides (e.g., the use of unmanned aerial vehicle‐based remote sensing). TheInternet ofThings (IoT) technologies could provide alternate solutions for monitoring landslides. However, existingIoTtechnologies are diverse and expensive to use. Thus, there is a need for developing low‐costIoTframeworks for monitoring landslides, especially in developing countries. This chapter proposes a microelectromechanical system (MEMS)‐basedIoTframework for sensing landslides at the lab‐scale. The proposed IoT framework offers a promising low‐cost solution for monitoring landslides with a large deployment potential in landslide‐prone areas.


    This chapter considers data‐driven remaining useful life (RUL) of a battery prediction, which is typically made on the basis of projecting the trajectory of the system's health indicator, often called the degradation signal. Two most commonly used health indicators of batteries are capacity and internal resistance, while other health‐dependent variables such as battery self‐discharge rate may also be considered. By analyzing the evolution paths of the health indicating variables/degradation signals, it is possible to infer not only the current but also the future health status of the unit being studied. The chapter introduces a method specifically developed for battery RUL prediction under hard failure. In this method, a joint modeling scheme is used to take into consideration both the degradation data and the time‐to‐failure data. To better assess the performance of the prognostic algorithm, alternative interval prediction, the maximum power interval (MPI), is introduced as opposed to confidence intervals and mean/median‐based intervals.

  • Mutual Coupling

    This chapter contains sections titled:IntroductionFundamentals of Scanning ArraysSpatial Domain Approaches to Mutual CouplingSpectral Domain ApproachesScan Compensation and Blind AnglesAcknowledgmentReferences

  • How to Prevent a Power Transistor from Overheating

    This chapter contains sections titled: * Electrical Model for Heat Transfer * Using Manufacturer's Data for Thermal Analysis * Forced-Air Cooling * Dynamic Response of a Thermal System * Problems

  • Practical Design of An LED Light Bulb

    To make the light bulb brighter, the light emitting diodes (LEDs) are also going to have to run hotter. And hotter LEDs means the mean time to failure (MTTF) is going to be less. There are going to be two sources of heat in the LED light bulb design, the ballast and the LEDs. This chapter draws a specification, for marketing sign‐off before the design begins. There are a number of issues that are indirectly addressed in this specification. The chapter talks about total harmonic distortion (THD). While THD has long been familiar to those interested in audio, it is relatively new in the world of power conversion. The chapter provides a summary in words of how the two measures, Flicker Index (FI) and Percent Flicker (%F), are calculated. FI first finds the average light output. The chapter then finds how much of the total light is emitted above that average. % F measures the difference between the brightest light emitted and the dimmest light.

  • Measurement and Modeling of Soil Resistivity

    This chapter introduces the measurement methods of soil resistivity, and the regular simplified methods and numerical method for soil models from test data, applications in actual engineerings are presented, too.

  • Bandwidth and Matching

    This chapter contains sections titled: * Introduction * Foster's Reactance Theorem and Smith Chart * Fano's Matching Limitations * Matching Circuit Loss Magnification * Network and_Z_0Matching * Non-Foster Matching Circuits * Matched and High-_Z_Preamp Monopoles * References

Standards related to Resistance

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IEEE Recommended Practice for Testing and Startup Procedures for Electric Heat Tracing Systems for Power Generating Stations

IEEE Standard Requirements for Instrument Transformers

This standard is intended for use as a basis for performance and interchangeability of equipment covered, and to assist in the proper selection of such equipment. Safety precautions are also addressed. This standard covers certain electrical, dimensional, and mechanical characteristics, and takes into consideration certain safety features of current and inductively coupled voltage transformers of types generally used in the ...

IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers

Jobs related to Resistance

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