Conferences related to Resistance

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. The conference addresses issues of immediate and long term importance to practicing power electronics engineer.


2019 IEEE Industry Applications Society Annual Meeting

The Annual Meeting is a gathering of experts who work and conduct research in the industrial applications of electrical systems.


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Periodicals related to Resistance

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Circuits and Systems I: Regular Papers, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


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Most published Xplore authors for Resistance

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Xplore Articles related to Resistance

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A measurement on contact resistance and surface profile of arcing Ag contacts

Proceedings of IEEE Holm Conference on Electrical Contracts, 1994

The arc duration, the contact resistance, and the electrode surface profile were measured at every operation in order to observe the detailed relationship between them. The amount of loss or gain of an electrode was also calculated from the change of the electrode surface profile. In the case where the arc duration was short and ended within the metallic phase, ...


Electrical and Mechanical Properties of Strands in Superconducting Triplets

IEEE Transactions on Applied Superconductivity, 2006

Contact resistance on strands is an important parameter for characterizing stability of cable-in-conduit conductors. We prepared triplets made of three strands with four different twist pitches (25, 50, 65 mm and untwisted). The electrical and mechanical properties of the strands were measured, after cycling 10 times with a peak force of 667 N/m. The contact area between the strands could ...


The sidewall resistor—A novel test structure to reliably extract specific contact resistivity

IEEE Electron Device Letters, 1986

Conventional contact resistance extraction structures suffer inaccuracies when measuring small values of contact resistivity which are sensitive to small perturbations in device fabrication. This is because two-dimensional current crowding around the periphery of the contact window introduces parasitic resistance components which are not accounted for by the one-dimensional model and which can be much larger than the contact resistance component ...


Breakdowns in the Metal-Semimetal BiSb Point Contacts

2007 International Kharkov Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW), 2007

The current-voltage characteristics (CVC) and the breakdown effects in the metal-semimetal BiSb (bismuth and stibium alloys) point contacts have been investigated to determine the power rating of the radiation scattered by the sample. The CVCs of the contacts exhibit breakdowns provoking the appearance of the negative differential S-resistance areas. Based on the breakdown voltage magnitude one can determine the power ...


Current capacity evaluation of a cantilever probe

2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT), 2008

The tungsten-rhenium (WRe) 3mil cantilever probe is widely used in wafer probe at ON Semiconductors. The maximum current that can be supplied to a DUT is restricted by the current capacity of the probe needles. A typical 3 mil tip probe can carry 2 - 3 Amps at a short burst current (I short) for a <;10 ms pulse time. ...


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Educational Resources on Resistance

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IEEE-USA E-Books

  • A measurement on contact resistance and surface profile of arcing Ag contacts

    The arc duration, the contact resistance, and the electrode surface profile were measured at every operation in order to observe the detailed relationship between them. The amount of loss or gain of an electrode was also calculated from the change of the electrode surface profile. In the case where the arc duration was short and ended within the metallic phase, the contact resistance was stable and low, and the surface profile was smooth. When the arc became of long duration and transformed into the gaseous phase, the contact resistance increased and grooves and ridges were observed on the electrode surface after the first long arc. The change was reversible, but it took several consecutive operations to recover low resistance and smooth surface.

  • Electrical and Mechanical Properties of Strands in Superconducting Triplets

    Contact resistance on strands is an important parameter for characterizing stability of cable-in-conduit conductors. We prepared triplets made of three strands with four different twist pitches (25, 50, 65 mm and untwisted). The electrical and mechanical properties of the strands were measured, after cycling 10 times with a peak force of 667 N/m. The contact area between the strands could be precisely estimated, and then the surface resistance was evaluated. As a result, the contact resistance and the surface resistance between the strands depended on the twist pitches of the wires. The results become fundamental data to simulate an electric circuit model consisting of more than one sub-cable, and also to estimate the inter-coupling losses in the cables

  • The sidewall resistor—A novel test structure to reliably extract specific contact resistivity

    Conventional contact resistance extraction structures suffer inaccuracies when measuring small values of contact resistivity which are sensitive to small perturbations in device fabrication. This is because two-dimensional current crowding around the periphery of the contact window introduces parasitic resistance components which are not accounted for by the one-dimensional model and which can be much larger than the contact resistance component for low values of specific contact resistivity ρc. Unfortunately, there is no direct method to isolate these parasitics, which makes the extraction of ρcusing the conventional test structures difficult. In this paper, a novel test device, the sidewall resistor, which utilizes the vertical sidewall dimensions, is demonstrated to circumvent these difficulties. The proposed structure has the advantage that a simple one-dimensional (1-D) extraction technique can still be used. The specific contact resistivity between pure Al and N+ polycrystalline Si is accurately extracted with the value of 7.4 × 10-8Ω.cm2. The sidewall resistor is then used to extract the contact resistivity between pure Al and WSi2which turns out to be less than 5 × 10-9Ω.cm2.

  • Breakdowns in the Metal-Semimetal BiSb Point Contacts

    The current-voltage characteristics (CVC) and the breakdown effects in the metal-semimetal BiSb (bismuth and stibium alloys) point contacts have been investigated to determine the power rating of the radiation scattered by the sample. The CVCs of the contacts exhibit breakdowns provoking the appearance of the negative differential S-resistance areas. Based on the breakdown voltage magnitude one can determine the power rating of the radiation scattered by the sample.

  • Current capacity evaluation of a cantilever probe

    The tungsten-rhenium (WRe) 3mil cantilever probe is widely used in wafer probe at ON Semiconductors. The maximum current that can be supplied to a DUT is restricted by the current capacity of the probe needles. A typical 3 mil tip probe can carry 2 - 3 Amps at a short burst current (I short) for a <;10 ms pulse time. Probing at a higher current level with minimal number of probes can cause current over crowding at probe tip which produces excessive heat due to electric charge and contact resistance. This heat can melt surface material and contaminant which can attach to the probe tip causing it to be deformed thus increasing resistance and temperature at the contact point. Accordingly more heat is generated by this causing the contaminant at probe tip to be further oxidized producing an insulating layer between DUT and probe. This results in spark occurrence during high current testing which may cause damage to the device. This paper describes the experiments carried out to guarantee the appropriate pulsed current level that can be carried through a single 3 mil tip probe without causing the probe tip to melt, get oxidized and generate sparks which could lead to devices damage due to EOS. Two MOSFET devices with current ratings of 2.0 Amps and 2.6 Amps respectively were used for this evaluation to determine the allowable operating pulsed current a probe can withstand. A Total of 85 K dies were probed, assembled and final tested. The test fallouts that were analyzed did not show any indication of an EOS signature on die cause by probe needles.

  • A testing instrument for dynamic contact resistance

    A mathematical model of the contact resistance of electrical apparatus contacts and its dynamic changing law are discussed, and a new testing instrument for the dynamic contact process of low-capacitance contacts (mainly relay contacts) is introduced.

  • An accurate 10-k/spl Omega/ resistance measurement system

    None

  • Performance improvement for sliding contacts utilizing tip polishing

    The potentiometer uses a sliding contact over a resistive track to transfer a mechanical position to an electrical resistance or voltage potential. The sliding stamped contact is subject to a die break condition on the contacting surface. Important to the performance of the device is contact resistance variation, which can be directly affected by the die break condition. A new process called tip polishing has been developed to selectively polish the contact tip. Samples of tip polished and unfinished parts were subjected to a 10 million-cycle dither test and the results compared. It was concluded that tip polishing has a major effect on controlling the contact resistance variation.

  • High Current Resistance Sintering For Producing Brass Powder Components

    Heat-treatment (sintering) is essential for manufacturing metal components through powder metallurgy (P/M) route. A typical heating eliminates the inter- particle surfaces of metal powder. Thus a metal powder component gets consolidated into one mass. Conventional muffle furnace heating (MFH) is common means to heat-treat a powder component. However, apart from dezincification (escaping of volatile zinc) of brass components, the method is time consuming, costlier and occupies more space. In this work, an alternative method is proposed. Direct resistance heating method is employed for this purpose. A high current (5.8 kA) ac-to-dc converter and a time delay circuit are used. Only the magnitude and the duration of the current through the component are controlled. A high current of the order of kA shows better results and it avoids dezincification too. Microstructures of components are also analyzed which give satisfactory results.

  • Electrical contact resistance: properties of stationary interfaces

    The paper reviews the dependence of electrical constriction resistance on the shape and dimensions of /spl alpha/-spots and on the magnitude of the mechanical contact load. The range of validity of the classical voltage- temperature relation for electrical contacts is also examined. The paper describes experimental evidence of breakdown of the classical electrical contact theory when /spl alpha/-spots become too small. One of the interesting and useful properties of relatively small /spl alpha/-spots is that they are subject to large surface stresses. These stresses induce /spl alpha/-spot growth.



Standards related to Resistance

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IEEE Recommended Practice for Testing and Startup Procedures for Electric Heat Tracing Systems for Power Generating Stations


IEEE Standard Requirements for Instrument Transformers

This standard is intended for use as a basis for performance and interchangeability of equipment covered, and to assist in the proper selection of such equipment. Safety precautions are also addressed. This standard covers certain electrical, dimensional, and mechanical characteristics, and takes into consideration certain safety features of current and inductively coupled voltage transformers of types generally used in the ...


IEEE Standard Test Procedures for Semiconductor X-Ray Energy Spectrometers