Conferences related to Resistance

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power


2014 IEEE Symposium Series on Computational Intelligence (SSCI)

The IEEE SSCI 2014 is a flagship international conference sponsored by the IEEE Computational Intelligence Society (CIS) promoting all aspects of Computational Intelligence (CI). The IEEE SSCI 2014 co-locates multiple exciting symposiums at one single location, providing a unique opportunity to encourage cross-fertilization and collaborations in all areas of CI. The IEEE SSCI 2014 features a large number of keynotes, tutorials, and special sessions. The IEEE SSCI 2014 will also offer a number of travel grants as well as an exciting Doctoral Consortium.


2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm)

electronics cooling


2012 IEEE 16th International Symposium on Consumer Electronics - (ISCE 2012)

ISCE hence provides a grand opportunity for the presentation and discussion of the very latest research and technology innovations related to the fast evolving consumer electronics technology.


2012 IEEE International SOI Conference

Forum for open discussion in all areas of silicon-on-insulator technologies, their applications and their related infrastructure.

  • 2011 IEEE International SOI Conference

    Silicon-on-Insulator device physics and modeling, hybrid substrate engineering (III-V advanced substrates, hybrid Si and III-V integration), new device physics, process integration and manufacturability, low-power SOI and circuit design infrastructure, SOI applications, double/multigate and vertical channel structures, SOI reliability, material science, characterization, SOI sensors/MEMS/RFID, 3D integration, SOI photonics.

  • 2010 IEEE International SOI Conference

    The IEEE International SOI Conference is the premier meeting of engineers and scientists dedicated to current trends in Silicon-on-Insulator technology and provides a forum for open discussion in all areas of silicon-on-insulator technologies and their applications. Ever increasing demand and advances in this technology make it essential to meet and discuss new gains and accomplishments, as well as to consider the new developments introduced in original papers presented at the conference.

  • 2009 IEEE International SOI Conference

    Conference is dedicated to current trends in Silicon-on-Insulator technology providing an open forum for discussion in all areas of SOI technologies and their applications.

  • 2008 IEEE International SOI Conference

    The conference was established with the support of IEEE to provide a forum for open discussion in all areas of silicon-on-insulator technologies and their appliations.


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Periodicals related to Resistance

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Resistance

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Xplore Articles related to Resistance

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Dynamic simulation of the induction motor: main variables in a dynamic motor performing

X. A. Morera; E. V. Rovira Electrical Machines and Systems, 2001. ICEMS 2001. Proceedings of the Fifth International Conference on, 2001

Is very important to test the main variables of electric motors, and to predicting the performance of motors which have yet to be built. One of the most important characteristics of the simulation models is that they provide all the parameters of motor tests that are desired in just a few seconds. In this paper, the authors show the characteristic ...


The sugarcane ethanol power industry in Brazil: Obstacles, success and perspectives

J. Marques De Azevedo; F. D. Galiana 2009 IEEE Electrical Power & Energy Conference (EPEC), 2009

A brief history of the Brazilian ethanol industry and its success is presented, such as, today the ethanol consumption for car's fuel supply is higher, cheaper and very much cleaner than the gasoline fuel. In continuation, some of the fallacious myths against the Brazilian sugarcane ethanol are refuted. The evolution of the Brazilian ethanol power industry is showed. Brazil has ...


Integration of high sheet resistance homogeneous emitters in a process flow for PERC-type solar cells with Cu contacts

Michel Ngamo; Loic Tous; Emanuele Cornagliotti; Jorg Horzel; Tom Janssens; Richard Russell; Jef Poortmans; Benoit Lombardet 2012 38th IEEE Photovoltaic Specialists Conference, 2012

This paper presents the results of the integration of a high sheet resistance (120 Ω/sq) homogeneous emitter with an industrial feasible process flow on large area p-type CZ-Si PERC solar cells with plated Ni-Si/Cu front contacts. Focus is put on the junction isolation performed by either applying a mask prior to POCl3 diffusion or by selectively removing the rear side ...


Properties of an electromagnetically coupled small antenna with a superconducting thin-film radiator

N. Suzuki; K. Itoh; Y. Nagai; O. Michikami IEEE Transactions on Applied Superconductivity, 1996

This paper describes the structure and properties of a 900-MHz-band small antenna with a superconducting thin-film radiator operated by electromagnetic coupling. The radiation efficiency of the antenna with a /spl lambda//38 radiator reached 74% at 79 K. The loss in this antenna comprised mismatching loss and radiator loss caused by the surface resistance of the superconducting thin film. A simulation ...


The thermal characterization of packaged semiconductor device

Shiwei Feng; Xuesong Xie; Changzhi Lu; Guangdi Shen; Guangbo Gao; Xiaoling Zhang Sixteenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (Cat. No.00CH37068), 2000

In this paper, using voltage drop of forward junction as temperature sensitive parameter (TSP) for GaAs MESFET and semiconductor laser diode, we measured temperature rise ΔT under normal operation condition. Furthermore, we composite a testing sequence in which the duration of driving pulse from several microseconds to 100 seconds. This sequence is designed actually to simulate the procedure of heat ...


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Educational Resources on Resistance

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eLearning

Dynamic simulation of the induction motor: main variables in a dynamic motor performing

X. A. Morera; E. V. Rovira Electrical Machines and Systems, 2001. ICEMS 2001. Proceedings of the Fifth International Conference on, 2001

Is very important to test the main variables of electric motors, and to predicting the performance of motors which have yet to be built. One of the most important characteristics of the simulation models is that they provide all the parameters of motor tests that are desired in just a few seconds. In this paper, the authors show the characteristic ...


The sugarcane ethanol power industry in Brazil: Obstacles, success and perspectives

J. Marques De Azevedo; F. D. Galiana 2009 IEEE Electrical Power & Energy Conference (EPEC), 2009

A brief history of the Brazilian ethanol industry and its success is presented, such as, today the ethanol consumption for car's fuel supply is higher, cheaper and very much cleaner than the gasoline fuel. In continuation, some of the fallacious myths against the Brazilian sugarcane ethanol are refuted. The evolution of the Brazilian ethanol power industry is showed. Brazil has ...


Integration of high sheet resistance homogeneous emitters in a process flow for PERC-type solar cells with Cu contacts

Michel Ngamo; Loic Tous; Emanuele Cornagliotti; Jorg Horzel; Tom Janssens; Richard Russell; Jef Poortmans; Benoit Lombardet 2012 38th IEEE Photovoltaic Specialists Conference, 2012

This paper presents the results of the integration of a high sheet resistance (120 Ω/sq) homogeneous emitter with an industrial feasible process flow on large area p-type CZ-Si PERC solar cells with plated Ni-Si/Cu front contacts. Focus is put on the junction isolation performed by either applying a mask prior to POCl3 diffusion or by selectively removing the rear side ...


Properties of an electromagnetically coupled small antenna with a superconducting thin-film radiator

N. Suzuki; K. Itoh; Y. Nagai; O. Michikami IEEE Transactions on Applied Superconductivity, 1996

This paper describes the structure and properties of a 900-MHz-band small antenna with a superconducting thin-film radiator operated by electromagnetic coupling. The radiation efficiency of the antenna with a /spl lambda//38 radiator reached 74% at 79 K. The loss in this antenna comprised mismatching loss and radiator loss caused by the surface resistance of the superconducting thin film. A simulation ...


The thermal characterization of packaged semiconductor device

Shiwei Feng; Xuesong Xie; Changzhi Lu; Guangdi Shen; Guangbo Gao; Xiaoling Zhang Sixteenth Annual IEEE Semiconductor Thermal Measurement and Management Symposium (Cat. No.00CH37068), 2000

In this paper, using voltage drop of forward junction as temperature sensitive parameter (TSP) for GaAs MESFET and semiconductor laser diode, we measured temperature rise ΔT under normal operation condition. Furthermore, we composite a testing sequence in which the duration of driving pulse from several microseconds to 100 seconds. This sequence is designed actually to simulate the procedure of heat ...


More eLearning Resources

IEEE-USA E-Books

  • Phenomena Related to System Faults and the Process of Clearing Faults from a Power System

    This chapter contains sections titled: Shunt Fault Types Occurring in a Power System Classification of Shunt Faults Types of Series Unbalance in a Power System Causes of Disturbance in a Power System Fault Incident Point Symmetric and Asymmetric Fault Currents Arc-Over or Flashover at the Voltage Peak Evolving Faults Simultaneous Faults Solid or Bolted (RF = 0) Close-in Phase-to-Ground Faults Sequential Clearing Leading to a Stub Fault that Shows a Solid (RF = 0) Remote Line-to-Ground Fault Sequential Clearing Leading to a Stub Fault that Shows a Resistive Remote Line-to-Ground Fault High-Resistance Tree Line-to-Ground Faults High-Resistance Line-to-Ground Fault Confirming the Resistive Nature of the Fault Impedance When Fed from One Side Only (Stub) Phase-to-Ground Faults on an Ungrounded System Current in Unfaulted Phases During Line-to-Ground Faults Line-to-Ground Fault on the Grounded-Wye (GY) Side of a Delta/GY Transformer Line-to-Line Fault on the Grounded-Wye Side of a Delta/GY Transformer Line-to-Line Fault on the Delta Side of a Delta/GY Transformer with No Source Connected to the Delta Winding Subcycle Relay Operating Time During an EHV Double-Phase-to-Ground Fault Self-Clearing of a C-g Fault Inside an Oil Circuit Breaker Tank Self-Clearing of a B-g Fault Caused by a Line Insulator Flashover Delayed Clearing of a Pilot Scheme Due to a Delayed Communication Signal Sequential Clearing of a Line-to-Ground Fault Step-Distance Clearing of an L-g Fault Ground Fault Clearing in Steps by an Instantaneous Ground Element at One End and a Ground Time Overcurrent Element at the Other End Ground Fault Clearing by Remote Backup Following the Failures of Both Primary and Local Backup (Breaker Failure) Protectio n Systems Breaker Failure Clearing of a Line-to-Ground Fault Determination of the Fault Incident Point and Classification of Faults Using a Comparison Method References

  • Industrial Relations Implications

    This chapter contains sections titled: What Micros Mean for Managers, Unemployment and Technology: A Trade Union View, A Trade Union Strategy for the New Technology, How to Fight the New Technology, Management Resistance to the New Technology, Guide to Further Reading

  • No title

    Intended as an introduction to the field of biomedical engineering, this book covers the topics of biomechanics (Part I) and bioelectricity (Part II). Each chapter emphasizes a fundamental principle or law, such as Darcy's Law, Poiseuille's Law, Hooke's Law, Starling's Law, levers, and work in the area of fluid, solid, and cardiovascular biomechanics. In addition, electrical laws and analysis tools are introduced, including Ohm's Law, Kirchhoff's Laws, Coulomb's Law, capacitors, and the fluid/electrical analogy. Culminating the electrical portion are chapters covering Nernst and membrane potentials and Fourier transforms. Examples are solved throughout the book and problems with answers are given at the end of each chapter. A semester-long Major Project that models the human systemic cardiovascular system, utilizing both a Matlab numerical simulation and an electrical analog circuit, ties many of the book's concepts together. Table of Contents: Ohm's Law: Current, Voltage and Resistance / Kirchhoff's Voltage and Current Laws: Circuit Analysis / Operational Amplifiers / Coulomb's Law, Capacitors and the Fluid/Electrical Analogy / Series and Parallel Combinations / Thevenin Equivalent Circuits / Nernst Potential: Cell Membrane Equivalent Circuit / Fourier Transforms: Alternating Currents (AC)

  • Resistance in the Materials

    _Between Humanities and the Digital_ offers an expansive vision of how the humanities engage with digital and information technology, providing a range of perspectives on a quickly evolving, contested, and exciting field. It documents the multiplicity of ways that humanities scholars have turned increasingly to digital and information technology as both a scholarly tool and a cultural object in need of analysis. The contributors explore the state of the art in digital humanities from varied disciplinary perspectives, offer a sample of digitally inflected work that ranges from an analysis of computational literature to the collaborative development of a "Global Middle Ages" humanities platform, and examine new models for knowledge production and infrastructure. Their contributions show not only that the digital has prompted the humanities to move beyond traditional scholarly horizons, but also that the humanities have pushed the digital to become more than a narrowly tec nical application. **Contributors**Ian Bogost, Anne Cong-Huyen, Mats Dahlstr??m, Cathy N. Davidson, Johanna Drucker, Amy E. Earhart, Kathleen Fitzpatrick, Maurizio Forte, Zephyr Frank, David Theo Goldberg, Jennifer Gonz??lez, Jo Guldi, N. Katherine Hayles, Geraldine Heng, Larissa Hjorth, Tim Hutchings, Henry Jenkins, Matthew Kirschenbaum, Cecilia Lindh??, Alan Liu, Elizabeth Losh, Tara McPherson, Chandra Mukerji, Nick Montfort, Jenna Ng, Bethany Nowviskie, Jennie Olofsson, Lisa Parks, Natalie Phillips, Todd Presner, Stephen Rachman, Patricia Seed, Nishant Shah, Ray Siemens, Jentery Sayers, Jonathan Sterne, Patrik Svensson, William G. Thomas III, Whitney Anne Trettien, Michael Widner

  • Other Technological Explorations in Diabetes Care

    The healthcare industry has been slow to join the information technology revolution; handwritten records are still the primary means of organizing patient care. Concerns about patient privacy, the difficulty of developing appropriate computing tools and information technology, high costs, and the resistance of some physicians and nurses have hampered the use of technology in health care. In 2009, the U.S. government committed billions of dollars to health care technology. Many questions remain, however, about how to deploy these resources. In Health Informatics, experts in technology, joined by clinicians, use diabetes--a costly, complex, and widespread disease that involves nearly every facet of the health care system--to examine the challenges of using the tools of information technology to improve patient care. Unlike other books on medical informatics that discuss such topics as computerized order entry and digital medical records, Health Informatics focuses on the patient, charting the information problems patients encounter in different stages of the disease. [Chapters discuss ubiquitous computing as a tool to move diabetes care out of the doctor's office, technology and chronic disease management, educational gaming as a way to help patients understand their disease, patient access to information, and methodological and theoretical concerns.] We need both technologists and providers at the drawing board in order to design and deploy effective digital tools for health care. This book examines and exemplifies this necessary collaboration.

  • Introduction

    Excerpt from the Preface The principal motivation for this work arose from the obvious desirability of finding a single quantity, a tag so to speak, to describe the noise performance of a two-terminal-pair amplifier. The possibility of the existence of such a quantity and even the general functional form which it might be expected to take were suggested by previous work of one of the authors on microwave tubes and their noise performance. This work showed that noise parameters of the electron beam set an ultimate limit to the entire noise performance of the amplifier that employed the beam. In the microwave tube case, however, the findings were based heavily upon the physical nature of the electron beam, and it was not immediately clear that a general theory of noise performance for any linear amplifier could be made without referring again to some detailed physical mechanism. In order to detach the study of noise performance from specific physical mechanisms, one had to have recourse to general circuit theory of active networks. Such a theory had grown up around the problems associated with transistor amplifiers, and important parts of it were available to us through the association of one of us with Professor S. J. Mason. This combination of circumstances led to the collaboration of the authors.Two major guiding principles, or clues, could be drawn from the experience on microwave tubes. One such clue was the general form of the probable appropriate noise parameter. The other was the recognition that matrix algebra and a proper eigenvalue formulation would be required in order to achieve a general theory without becoming hopelessly involved in algebraic detail.Essentially by trial and error, guided by some power-gain theorems in active circuit theory, we first found a few invariants of noisy networks. Afterward, while we were trying to decide around which quantities we should build a matrix-eigenvalue formulation leading to these same invariants, we were aided by the fact that Mr. D. L. Bobroff recognized a connection between the invariants which we had found and the problem of the available power of a multiterminal-pair network.Armed with this additional idea, we consulted extensively with Professor L. N. Howard of MIT's Department of Mathematics, in search of the appropriate matrix-eigenvalue problem. As a result of his suggestions, we were able to reach substantially the final form of the desired formulation.Once the proper eigenvalue approach was found, additional results and interpretations followed rapidly. In particular, the idea that the eigenvalue formulation should be associated with a canonical form of the noisy network was suggested in a conversation with Proessor Shannon.One of the principal results of the work is that it furnishes a single number, or tag, which may be said to characterize the amplifier noise performance on the basis of the signal-to-noise-ratio criterion. The novel features of this tag are two in number: First, it clears up questions of the noise performance of low-gain amplifiers or of the effect upon noise performance of degenerative feedback; second, it provides for the first time a systematic treatment of the noise performance of negative-resistance amplifiers. The latter results were not expected in the original motivation for the study but grew from insistent demands upon the internal consistency of the theory. It is interesting that the negative-resistance case will probably turn out to be one of the most important practical results of our work.Another result worth mentioning here, however, is the canonical form of linear noisy networks. This form summarizes in a clear, almost visual, manner the connection between the internal noise of a network at any particular frequency and its (resistive, positive, or negative) part.

  • Gate Field Engineering and Source/Drain Diffusion Engineering for High???Performance Si Wire Gate???All???Around MOSFET and Low???Power Strategy in a Sub???30 nm???Channel Regime

    This chapter reconsiders the design methodology of the short???channel gate???all???around (GAA) silicon???on???insulator (SOI) MOSFET and proposes an advanced concept that offers enhanced performance. The new ideas raised here are based on gate field engineering and source and drain diffusion engineering. The validity of the proposal is demonstrated by device simulations. Covering the junction of a Si wire body with a relatively thick gate insulator raises the carrier density of low???doped source and drain diffusion regions, resulting in a drastic reduction in parasitic resistance (which has, up to now, hindered performance enhancement) as well as the suppression of short???channel effects due to the effective extension of channel length; it is also demonstrated that these advantages can be expected even for a narrow, highly doped source and drain diffusion regions with abrupt junctions. The simulation results suggest that 15 and 20 nm channel gate???all???around silicon???on???insulator metal oxide semiconductor field???effect transistors (GAA SOI MOSFETs) with the abrupt junction will be promising if the devices have a body cross???section of 10???nm????????10 nm and a thick insulator covers the junction. On the other hand, as it has been demonstrated that the proposed GAA device must have long and graduated source and drain diffusion regions in order to achieve the expected one???order???lower standby power consumption, a loss of drivability has to be accepted. However, it is shown that drivability can be improved by slightly expanding the cross???section of source and drain diffusion regions without seriously impacting the area penalty.

  • Practical Design of A USB Light

    This chapter discusses USB¿¿¿powered reading light design. The first thing is to look up the USB specification. The next thing to do is to select the LED, because everything else depends on that selection. Having chosen the LED, the chapter begins designing the driver. The first thing is to figure out the drive current. There are two aspects to efficiency calculations. The chapter starts with the power conversion efficiency at full output power and then calculates minimum power. It is need to estimate the temperature of the light emitting diode (LED) to make sure to meet the lifetime. Both depend on the junction temperature of the LED. More significantly for the design, encasing the whole thing in plastic gives the LED very high thermal resistance to the ambient.

  • Absolute Negative Resistance in Ballistic Variable Threshold Field Effect Transistor

    This chapter contains sections titled: Acknowledgments References

  • Concavity of Resistance Functions

    It is proved that any network of linearly wound potentiometers and fixed resistors has a curve of resistance versus shaft angle which is concave downward.



Standards related to Resistance

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No standards are currently tagged "Resistance"