Conferences related to Protons

Back to Top

2018 7th Electronic System-Integration Technology Conference (ESTC)

This international event brings together both academic as well as the industry leaders to discuss and debate about the state-of-art and future trends in electronics packaging and integration technologies.


2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


2018 IEEE International Conference on Automation, Quality and Testing, Robotics (AQTR)

AQTR 2018 is intended to be an international forum for researchers in the field of automation, quality, testing and robotics. It will bring together equipment manufacturers, software developers and end-users to discuss the current trends and future directions of control and testing technologies and their industrial and social applications in the private and the public sectors. Active participation of students and graduate students is strongly encouraged.


2017 12th International Forum on Strategic Technology (IFOST)

New materials and nanotechnologies , Information and communication technologies , Information and communication technologies , Power engineering and electric power electronics , etc


2017 13th IEEE Conference on Automation Science and Engineering (CASE 2017)

This is the flagship conference of IEEE RAS in Automation


More Conferences

Periodicals related to Protons

Back to Top

Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


More Periodicals


Xplore Articles related to Protons

Back to Top

N-type doping of silicon by proton implantation

Jan N. Klug; Josef Lutz; Jan B. Meijer Proceedings of the 2011 14th European Conference on Power Electronics and Applications, 2011

Ion implantation is one of the most common processes in semiconductor manufacturing. Unfortunately the implantation depth and is limited due to the mass of phosphorous or arsenic. Proton irradiation can go beyond this limit and be utilized to adjust the doping of silicon power devices even in a high depth. The creation of donors is studied for high energy, high ...


Single-word multiple-bit upsets in static random access devices

R. Koga; S. D. Pinkerton; T. J. Lie; K. B. Crawford IEEE Transactions on Nuclear Science, 1993

Presents the results of an investigation of the SMU (single-word multiple-bit upset) vulnerability of a number of high density SRAM (static random-access memory) device types. The primary objectives of this study were to examine the extent of SMUs in SRAMs, determine design characteristics that predispose devices to this type of upset, and investigate SMU mitigation techniques applicable to space-based electronic ...


A technique to measure trap characteristics in CCD's using X-rays

K. C. Gendreau; G. Y. Prigozhin; R. K. Huang; M. W. Bautz IEEE Transactions on Electron Devices, 1995

An important type of radiation damage in CCD's used for X-ray spectroscopy is the degradation of charge transfer efficiency (CTE). Traps associated with radiation-induced defects are the basic cause of the damage. Here, we describe a method to extract trap characteristics using small charge packets produced by individual X-ray photon interactions in rectangular imaging CCD's. The method applies the principles ...


Liquid methane properties and possible use as fast neutron detector

G. Bressi; M. Cambiaghi; G. Carugno; E. Conti; B. Dainese; G. Prete; N. Toniolo 10th International Conference on Conduction and Breakdown in Dielectric Liquids, 1990

A purification system for methane has been developed which made it possible to reach an electron attenuation length in liquid methane >1 m. With this purity level, one could carry out a systematic study of the electron mobility. A free-ion yield of cosmic rays and protons of 1> E>7 MeV was also measured. The results obtained confirm the feasibility of ...


A fast binary front-end ASIC for the RICH detector of the COMPASS experiment at CERN

Michela Chiosso; Ozgur Cobanoglu; Giovanni Mazza; Daniele Panieri; Angelo Rivetti 2008 IEEE Nuclear Science Symposium Conference Record, 2008

The paper describes a fast binary integrated circuit. The chip was developed to read-out the multi-anode photomultiplier tubes which equip the RICH detector of the COMPASS experiment at CERN. The ASIC incorporates eight identical channels, each featuring a low-noise amplifier followed by a comparator and a LVDS driver. The amplifier has a peaking time of 10 ns and a gain ...


More Xplore Articles

Educational Resources on Protons

Back to Top

eLearning

N-type doping of silicon by proton implantation

Jan N. Klug; Josef Lutz; Jan B. Meijer Proceedings of the 2011 14th European Conference on Power Electronics and Applications, 2011

Ion implantation is one of the most common processes in semiconductor manufacturing. Unfortunately the implantation depth and is limited due to the mass of phosphorous or arsenic. Proton irradiation can go beyond this limit and be utilized to adjust the doping of silicon power devices even in a high depth. The creation of donors is studied for high energy, high ...


Single-word multiple-bit upsets in static random access devices

R. Koga; S. D. Pinkerton; T. J. Lie; K. B. Crawford IEEE Transactions on Nuclear Science, 1993

Presents the results of an investigation of the SMU (single-word multiple-bit upset) vulnerability of a number of high density SRAM (static random-access memory) device types. The primary objectives of this study were to examine the extent of SMUs in SRAMs, determine design characteristics that predispose devices to this type of upset, and investigate SMU mitigation techniques applicable to space-based electronic ...


A technique to measure trap characteristics in CCD's using X-rays

K. C. Gendreau; G. Y. Prigozhin; R. K. Huang; M. W. Bautz IEEE Transactions on Electron Devices, 1995

An important type of radiation damage in CCD's used for X-ray spectroscopy is the degradation of charge transfer efficiency (CTE). Traps associated with radiation-induced defects are the basic cause of the damage. Here, we describe a method to extract trap characteristics using small charge packets produced by individual X-ray photon interactions in rectangular imaging CCD's. The method applies the principles ...


Liquid methane properties and possible use as fast neutron detector

G. Bressi; M. Cambiaghi; G. Carugno; E. Conti; B. Dainese; G. Prete; N. Toniolo 10th International Conference on Conduction and Breakdown in Dielectric Liquids, 1990

A purification system for methane has been developed which made it possible to reach an electron attenuation length in liquid methane >1 m. With this purity level, one could carry out a systematic study of the electron mobility. A free-ion yield of cosmic rays and protons of 1> E>7 MeV was also measured. The results obtained confirm the feasibility of ...


A fast binary front-end ASIC for the RICH detector of the COMPASS experiment at CERN

Michela Chiosso; Ozgur Cobanoglu; Giovanni Mazza; Daniele Panieri; Angelo Rivetti 2008 IEEE Nuclear Science Symposium Conference Record, 2008

The paper describes a fast binary integrated circuit. The chip was developed to read-out the multi-anode photomultiplier tubes which equip the RICH detector of the COMPASS experiment at CERN. The ASIC incorporates eight identical channels, each featuring a low-noise amplifier followed by a comparator and a LVDS driver. The amplifier has a peaking time of 10 ns and a gain ...


More eLearning Resources

IEEE-USA E-Books

  • From the Bottom Up: Voltages, Currents, and Electrical Components

    This chapter contains sections titled: * An Introduction to Electric Charges and Atoms * Electric DC Voltage and Current Sources * Electric Components: Resistors, Inductors, and Capacitors * Ohm's Law, Power Delivered and Power Consumed * Capacitors * Inductors * Kirchhoff's Voltage Law (KVL) and Kirchhoff's Current Law (KCL) * Summary * Further Reading * Problems

  • Two-Item Lists

    The very simplest list is a list with two items, usually separated by the word ?>and?>. The important thing to know about two-item lists is the principle of equivalence: both items in the list must be of the same form and must relate to the same antecedent, which is the word that introduces the list. This chapter presents some examples to understand the equivalence principle. A two- item list is considered to be in balance when both of the items are distinct and the principle of equivalence is satisfied. An unbalanced two-item list has two items, but one of the items is not distinct. A compound sentence is a two- item list, in which each item is itself a complete sentence, or main clause. When qualifiers are added to compound sentences, the general rule for multiple qualifiers still applies: no more than two major qualifiers in a sentence.



Standards related to Protons

Back to Top

No standards are currently tagged "Protons"


Jobs related to Protons

Back to Top