Conferences related to Oxidation

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2013 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

In order to avoid dangerous climate change, provide sustainable green energy and better life for global population, the ICT products and services need to gain further effective improvements in system performance and integration, and innovate to reduce environmental impact. Over the past years, IMPACT conference, a remarkable platform, continually pay attention to the latest trends of global micro-system, packaging and circuit technology, and encourage the development and research of new materials, processes and designs in realizing the versatile system demands for advanced consumer, communication, cloud & mobile computing, medical and automobile applications.



Periodicals related to Oxidation

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Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths



Most published Xplore authors for Oxidation

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Xplore Articles related to Oxidation

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Ultra-low-loss nano-taper coupler for silicon-on-insulator ridge waveguide

Minhao Pu; Liu Liu; Haiyan Ou; Kresten Yvind; Jørn M. Hvam 36th European Conference and Exhibition on Optical Communication, 2010

A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler.


Scavenging Effects of Echinacea purpurea Extract and Active Ingredient Against Peroxynitrite

Yun-Jing Luo; Jing-Lin Pan; Yan-Shu Pan; Ru Gang Zhong 2009 3rd International Conference on Bioinformatics and Biomedical Engineering, 2009

The present study was to investigate the protective effect of Echinacea, purpurea (E. purpurea) extract, a natural scavenger of peroxynitrite (ONOO-), on the biomolecules injury induced by ONOO- in vitro. The results showed that E. purpurea extract could prevent the ONOO--mediated damage in tyrosine nitration, low density lipoprotein (LDL) oxidation and DNA strand breaks. The ONOO- scavenging ability of E. ...


Integration of high sheet resistance homogeneous emitters in a process flow for PERC-type solar cells with Cu contacts

Michel Ngamo; Loic Tous; Emanuele Cornagliotti; Jorg Horzel; Tom Janssens; Richard Russell; Jef Poortmans; Benoit Lombardet 2012 38th IEEE Photovoltaic Specialists Conference, 2012

This paper presents the results of the integration of a high sheet resistance (120 Ω/sq) homogeneous emitter with an industrial feasible process flow on large area p-type CZ-Si PERC solar cells with plated Ni-Si/Cu front contacts. Focus is put on the junction isolation performed by either applying a mask prior to POCl3 diffusion or by selectively removing the rear side ...


Process control of reactive sputter deposition of AlO<inf>x</inf> and improved surface passivation of crystalline silicon

Xinyu Zhang; Andres Cuevas; Andrew Thomson 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 2012

In this paper, we investigate the relationship between the deposition-process parameters of reactively sputtered aluminium oxide films and the passivation of silicon surfaces. A method of tuning the deposition process has been established that results in a reduced level of surface recombination, where surface recombination velocities as low as 8.5 cm/s have been achieved on 1 Ω*cm n-type monocrystalline silicon. ...


Manufacturing of Cu/electroless nickel/Sn-Pb flip chip solder bumps

Kwang-Lung Lin; Yi-Cheng Liu IEEE Transactions on Advanced Packaging, 1999

A process for manufacturing Cu/electroless Ni/Sn-Pb solder bump is discussed in this paper. An attempt to replace zincation with a Cu film as an active layer for the electroless Ni (EN) deposition on Al electrode on Si wafer is presented. Cu/electroless Ni is applied as under bump metallurgy (UBM) for solder bump. The Cu film required repeated etches with nitric ...


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Educational Resources on Oxidation

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eLearning

Ultra-low-loss nano-taper coupler for silicon-on-insulator ridge waveguide

Minhao Pu; Liu Liu; Haiyan Ou; Kresten Yvind; Jørn M. Hvam 36th European Conference and Exhibition on Optical Communication, 2010

A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler.


Scavenging Effects of Echinacea purpurea Extract and Active Ingredient Against Peroxynitrite

Yun-Jing Luo; Jing-Lin Pan; Yan-Shu Pan; Ru Gang Zhong 2009 3rd International Conference on Bioinformatics and Biomedical Engineering, 2009

The present study was to investigate the protective effect of Echinacea, purpurea (E. purpurea) extract, a natural scavenger of peroxynitrite (ONOO-), on the biomolecules injury induced by ONOO- in vitro. The results showed that E. purpurea extract could prevent the ONOO--mediated damage in tyrosine nitration, low density lipoprotein (LDL) oxidation and DNA strand breaks. The ONOO- scavenging ability of E. ...


Integration of high sheet resistance homogeneous emitters in a process flow for PERC-type solar cells with Cu contacts

Michel Ngamo; Loic Tous; Emanuele Cornagliotti; Jorg Horzel; Tom Janssens; Richard Russell; Jef Poortmans; Benoit Lombardet 2012 38th IEEE Photovoltaic Specialists Conference, 2012

This paper presents the results of the integration of a high sheet resistance (120 Ω/sq) homogeneous emitter with an industrial feasible process flow on large area p-type CZ-Si PERC solar cells with plated Ni-Si/Cu front contacts. Focus is put on the junction isolation performed by either applying a mask prior to POCl3 diffusion or by selectively removing the rear side ...


Process control of reactive sputter deposition of AlO<inf>x</inf> and improved surface passivation of crystalline silicon

Xinyu Zhang; Andres Cuevas; Andrew Thomson 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, 2012

In this paper, we investigate the relationship between the deposition-process parameters of reactively sputtered aluminium oxide films and the passivation of silicon surfaces. A method of tuning the deposition process has been established that results in a reduced level of surface recombination, where surface recombination velocities as low as 8.5 cm/s have been achieved on 1 Ω*cm n-type monocrystalline silicon. ...


Manufacturing of Cu/electroless nickel/Sn-Pb flip chip solder bumps

Kwang-Lung Lin; Yi-Cheng Liu IEEE Transactions on Advanced Packaging, 1999

A process for manufacturing Cu/electroless Ni/Sn-Pb solder bump is discussed in this paper. An attempt to replace zincation with a Cu film as an active layer for the electroless Ni (EN) deposition on Al electrode on Si wafer is presented. Cu/electroless Ni is applied as under bump metallurgy (UBM) for solder bump. The Cu film required repeated etches with nitric ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • Appendix D: Physical Properties

    This appendix contains sections titled: Properties of Semiconductors Properties of Ge, Si, and GaAs Properties of SiO2 and Si3N4 Resistivity and Mobility Intrinsic Concentrations and Fermi Levels Depletion Nomograph Absorption Coefficients Silicon Oxidation Rates Ion-Implantation Ranges and Standard Deviations Impurity Diffusion Coefficients Impurity Energy Levels Solid Solubilities Properties of Metals and Silicides Energy gap vs. lattice constant

  • Progress in Prediction of Oxidation States of Cysteines via Computational Approaches

    Predicting the oxidation states of cysteines computationally usually involves first extracting commonalities from the available data obtained by observation or statistical analysis, or utilizing artificial intelligence. Then the acquired knowledge is applied to sequences with the bonding states unknown. Accuracy as calculation was based on the percentage of correct predictions among all test cases. To date, artificial intelligence achieves the highest accuracy among all computational methods attempted. Here, the authors surveyed 15 research efforts published since the 1980s in predicting cysteine oxidation states via computational methods, from the initial attempt using neural networks to the present state of the art. Most of these research efforts have reported prediction accuracy, although some of them used datasets that differed from the others. The essential information used for the predictions was first summarized all to determine the factors impacting the problem.

  • Cold Plasma Processes for Surface Modification

    This chapter contains sections titled: Introduction Surface Modification of Polymers Surface Cleaning and Ashing Oxidation Surface Hardening Questions References

  • High Temperature Aluminum Nitride Packaging

    As is often the case, advances in electronics are dictated not by the IC devices themselves, but by the ability to package those devices. This is certainly the case for high temperature electronics. The limits of conventional packaging materials such as glass-epoxy circuit boards, plated copper traces and Sn-Pb solder are obvious at temperatures in excess of 300°C. Even standard ceramic packages based on Al2O3 are inadequate above 300°C. Novel materials and assembly techniques required for high temperature operation are presented in this paper. Factors such as thermal conductivity, expansion coefficients, oxidation and diffusion become more critical as operating temperatures increase, and therefore play major roles in determining package construction techniques. The evolution of high temperature package construction will be reviewed in light of these constraints. High temperature packages have been developed based on aluminum nitride (AIN) substrates and nickel metallization. Key features of the packages described in this paper are molded AIN bodies, directly bonded low temperature cofired ceramic (LTCC) frames and silver active braze seals, all of which contribute to producing hermetic packages at high temperatures. A discussion of interconnect metallurgies and attachment methods is included. Test data demonstrating the reliability of AIN high temperature packages will also be presented.

  • Nand Flash Memory Devices

    The most important requirement for NAND flash memory is a low bit cost. This chapter discusses the NAND flash memory cell and its scaling technologies. Requirements for isolation in NAND flash memory cell are more severe than other devices due to high-voltage operation during programming. Therefore, it was difficult to scale down of local oxidation of silicon (LOCOS) isolation width beyond 1.5-m width due to boron diffusion from isolation bottom by LOCOS oxidation process. Then, a new field through implantation (FTI) process was developed. Next, the self-aligned shallow trench isolation cell (SA-STI cell) with floating gate (FG) wing had been developed. The chapter presents the planar FG cell and also discusses the side wall transfer-transistor (SWATT) cell as alternate memory cell technology for a multilevel NAND flash memory cell. Finally, it presents other advanced NAND flash device technologies.

  • CMOS Circuit Fabrication

    This chapter contains sections titled: Wafer Preparation Oxidation Deposition, Lithography and Etching Epitaxy, Diffusion and Ion Implantation Contacts and Interconnects Masks and Design Rules Problems

  • Board Reflow Processes and their Effect on Tin Whisker Growth

    This chapter reviews the potential affect that the board reflow process has on tin whisker growth. Investigations in this area have looked at grain orientations and grain size, solder paste volume, and solder peak temperature on tin whisker growth. The chapter discusses the results on tin whisker testing on soldered pure???tin???coated components after reflow. There has been work to understand the affect of reflow profile, reflow atmosphere, solder paste volume, and flux activity on tin whisker growth. For tin???lead soldering, the lower soldering peak temperature reduced solder paste wetting up the component lead frame increasing the potential for tin whisker growth. Different flux activators were found to aid the oxidation of tin, which increased tin whisker growth after temperature and humidity testing. Increased contamination of the soldered components with chloride and sulfate also increased tin whisker growth after temperature and humidity testing.

  • IGBT Process Design and Fabrication Technology

    Process Sequence Definition Unit Process Steps Process Integration and Simulation Review Exercises References Appendix 8.1 Thermal Oxidation of Silicon Appendix 8.2 Derivation of Eqs. (8.3)-(8.5)

  • Rotor and Stator Laminated Cores

    This chapter discusses rotor and stator cores and, in particular, steel lamination and insulation on these laminations, as well as how the laminations are fabricated into cores. It restricts the materials, processes, and insulation of laminated stator and rotor cores, that is, electromagnet application. Magnetic fields are characterized by the magnetic flux, the magnetic flux density or B, and the magnetic field intensity or H. The latter is called the magnetomotive force or mmf when the field is generated by an electromagnet. Laser cutting is also used for limited new production and prototypes, for modifications of laminations from existing dies or punched stock, and to replace damaged laminations during core repairs. The annealing is carried out in an inert atmosphere to prevent oxidation of the metal surface. Burr removal is often done by a grinding or sanding operation that also leaves some bare metal where the burrwas removed.

  • Device Processing of Silicon Carbide

    Many processing steps are required to fabricate complex electronic devices, including doping by ion implantation, patterning, etching, oxidation, passivation, and metallization. The process flow in SiC device fabrication is similar to that in silicon technology but several unique processes, with particular requirements, are also needed because of the unique physical and chemical properties of SiC. This chapter introduces the fundamental aspects and technological development of ion implantation, etching, oxidation, interface passivation, and Schottky and ohmic contacts in SiC.



Standards related to Oxidation

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Jobs related to Oxidation

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