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Giant magnetoresistance in pseudo-binary bulk alloys

Hutten, A.; Handstein, A.; Eckert, D.; Muller, H.-K.; Schultz, L. Magnetics, IEEE Transactions on, 1996

Giant magnetoresistance (GMR) has been observed in magnetically optimized AlNiCo5 and FeCrCo bulk alloys with amplitudes sizes as much as 3% at 300 K and 5% at 10 K. In contrast, homogenized FeCrCo samples show the anisotropic magnetoresistance. The field dependence of the GMR amplitude cannot be scaled by a simple function of magnetization due to a strong field dependence ...


Strong Temperature Dependence of Magnetoresistance in Co-C Granular Thin Films

Tang, Ruihe; Mizuguchi, Masaki; Hai Wang; Yu, Ronghai; Takanashi, Koki Magnetics, IEEE Transactions on, 2010

Co-C granular thin films with a Co content of 6.4 at.% were deposited at room temperature by co-sputtering. The magnetotransport properties of the thin films were investigated within 2-300 K under magnetic fields up to 90 kOe. A large negative magnetoresistance (MR) of 27.6% was successfully observed at 2 K. As temperature (T) increased, negative MR decreased drastically. Meanwhile, positive ...


Large magnetoresistance at room temperature in organic semiconductor devices

Mermer, O.; Wohlgenannt, M.; Francis, T.L.; Veeraraghavan, G. Magnetics, IEEE Transactions on, 2005

We describe a large magnetoresistance (MR) effect in organic light-emitting diodes that reaches up to 10% at fields of 10 mT at room temperature. This MR effect occurs both in π-conjugated polymers and small molecules. Our devices do not contain any magnetic materials. We found that the MR effect is only weakly temperature dependent and does not depend on sign ...


Theory and applications of a three dimensional multiplier by means of magnetoresistance

Sun, S.F. Electron Devices Meeting, 1963 International, 1963

There are many practical applications of galvanomagnetic effects of metallic and intermetallic semiconductors in electronic devices, most of them utilizing the Hall effect. On account of its characteristics as a two dimensional multiplier in nature and its simple circuit assembly, the Hall effect element has attracted more attention than the magnetoresistance element which needs inevitably an extra biasing magnetic field ...


Anisotropic magnetoresistance and Hall effects for Ni-Fe-M alloy thin films

Tanaka, T.; Kobayashi, I.; Takahashi, M.; Wakiyama, T. Magnetics, IEEE Transactions on, 1990

The anisotropic magnetoresistivity, Δρ, and resistivity, ρ0, were measured and related to the ordinary Hall coefficient, R0, and the extraordinary Hall coefficient, Rs, for Ni-Fe and (Ni89.5Fe 10.5)100-x Mx(x⩽10) alloy films (M=Al, Si, Co, Cu, Nb or Gd). From the experimental results, the value of Δρ was found to be strongly related to Rs. At Rs=O, Δρ reached its maximum ...


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Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.



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