Conferences related to OFETs

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2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies 1. Channel Engineering 2. High-k/Metal gate Technology 3. Advanced Source/Drain Technology 4. Interconnect Technology 5. Advanced 3D Integration 6. Novel Process Technologies 7. Ultra-Thin Body Transistors and Device Variability 8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs 11. CNT, MTJ Devices and Nanowire Photodiodes 12. Low- Power and Steep Slope Switching Devices

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2014 IEEE 15th International Symposium on Electrets ISE 15

Electrets and related phenomena continue to receive much interest both from the fundamental and applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, ) and, hence, is at the frontier of many scientific domains. The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materi

  • 2011 14th International Symposium on Electrets ISE 14

    Topics covered will include: # Charge injection, transport & trapping # Thermally stimulated current & dielectric relaxation # Nanoscale measurements of electrostatic phenomena # Ferroelectric, piezoelectric & pyroelectric phenomena # Ferroelectret & photoelectret # Electrostatic & dielectric phenomena in life science: bioelectret # Non-linear electrical & optical effects # Application of thin film ferroelectric # Electrets in organic electronics # Soft actuators & sensors

  • 2008 13th International Symposium on Electrets ISE 13

    Electrets and related phenomena originating from charge injection, storage and transport, and applied to storage, transport and conversion devices.


2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and Approaches Novel Device Reliability and Failure Mechanisms Novel Gate Stack/Dielectrics and FEOL Reliability and Failure Mechanisms Advanced Interconnects and BEOL Reliability and Failure Mechanisms


2012 70th Annual Device Research Conference (DRC)

For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2011 69th Annual Device Research Conference (DRC)

    The Device Research Conference brings together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations.

  • 2010 68th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2009 67th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2008 66th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2007 65th Annual Device Research Conference (DRC)

    For more than sixty years, the DRC has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions.

  • 2006 64th Annual Device Research Conference (DRC)

  • 2005 63rd Annual Device Research Conference (DRC)


2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)

This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.



Periodicals related to OFETs

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Proceedings of the IEEE

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...




Xplore Articles related to OFETs

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A Simple and Direct Method for Interface Characterization of OFETs

Srinivas, P.; Tiwari, S.P.; Raval, H.N.; Ramesh, R.N.; Cahyadi, T.; Mhaisalkar, S.G.; Rao, V.R. Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the, 2007

Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO2 as the gate dielectric. Our results show interface state densities in the ...


Engineering density of semiconductor-dielectric interface states to modulate threshold voltage in OFETs

Wang, A.; Kymissis, I.; Bulovic, V.; Akinwande, A.I. Electron Devices, IEEE Transactions on, 2006

Threshold-voltage control is critical to the further development of pentacene organic field-effect transistors (OFETs). In this paper, we demonstrate that the threshold voltage can be tuned through chemical treatment of the gate dielectric layer. We show that oxygen plasma treatment of an organic polymer gate dielectric, parylene, introduces traps at the semiconductor-dielectric interface that strongly affect the OFET performance. Atomic ...


Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements

Ryu, K.; Kymissis, I.; Bulovic, V.; Sodini, C.G. Electron Device Letters, IEEE, 2005

Mobility was extracted from top-contact pentacene organic field effect transistors with minimal assumptions. Low-frequency capacitance-voltage (C-V) measurements were used to calculate the sheet charge density of the channel, and current-voltage measurements with low drain-to-source voltage were used to extract mobility. The separation of charge and mobility with the use of C-V measurements illustrates that the mobility increases with gate voltage, ...


Electrical properties of spin coated PMMA for OFETs applications

Ismail, L.N.; Habibah, Z.; Abdullah, M.H.; Herman, S.H.; Rusop, M. Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on, 2011

Poly (methy-methacrylate) (PMMA) thin films were deposited by sol-gel spin coating method on glass substrates. PMMA powder was dissolved in 60ml Toluene with the concentration of the PMMA in the solution was varied from 30 ~ 120 mg. Besides the PMMA concentration, we also studied the effect of the thin films thickness on the electrical properties. The results for electrical ...


Charged OFETS: Tuning of threshold voltage and off-current of organic transistors for adaptable circuits and amplifiers

Deshmukh, K.D.; West, James E.; Katz, H.E. Electrets, 2008. ISE-13. 13th International Symposium on, 2008

Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of ...


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Educational Resources on OFETs

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