Conferences related to OFETs

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2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2014 IEEE 15th International Symposium on Electrets ISE 15

Electrets and related phenomena continue to receive much interest both from the fundamentaland applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, …) and, hence, is at the frontier of many scientific domains.The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materials science and engineering, condensed matter physics and chemistry, and a chance for communicating about recent advances and research and development efforts in these areas. It also provides a forum for in-depth discussions between the most experienced and established scientists and engineers and young researchers.

  • 2011 IEEE 14th International Symposium on Electrets ISE 14

    Topics covered will include: # Charge injection, transport & trapping # Thermally stimulated current & dielectric relaxation # Nanoscale measurements of electrostatic phenomena # Ferroelectric, piezoelectric & pyroelectric phenomena # Ferroelectret & photoelectret # Electrostatic & dielectric phenomena in life science: bioelectret # Non-linear electrical & optical effects # Application of thin film ferroelectric # Electrets in organic electronics # Soft actuators & sensors

  • 2008 13th International Symposium on Electrets ISE 13

    Electrets and related phenomena originating from charge injection, storage and transport, and applied to storage, transport and conversion devices.


2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms


2012 70th Annual Device Research Conference (DRC)

For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.

  • 2011 69th Annual Device Research Conference (DRC)

    The Device Research Conference brings together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations.

  • 2010 68th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2009 67th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2008 66th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2007 65th Annual Device Research Conference (DRC)

    For more than sixty years, the DRC has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions.

  • 2006 64th Annual Device Research Conference (DRC)

  • 2005 63rd Annual Device Research Conference (DRC)


2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)

This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.



Periodicals related to OFETs

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Proceedings of the IEEE

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...




Xplore Articles related to OFETs

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Modeling of fully printed organic field effect transistors for circuit design and simulation

Olka Kaveh; Bahman Kheradmand-Boroujeni; Daniel Kasemann; Karl Leo; Frank Ellinger 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2016

Organic field effect transistors (OFETs) have significantly improved during recent years. However, there is still a lack of complete compact models for these devices, due to different materials, device structures, and manufacturing processes. Previous studies on compact OFET modeling have only considered static I-V characteristics, which are subject to the bias-stress effect. In this study, for the first time, two ...


Extracting Contact Effects in Organic FETs

B. H. Hamadani; D. Natelson Proceedings of the IEEE, 2005

Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic FETs (OFETs). These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage. Here we outline ...


A 3-D-Stack Organic Sheet-Type Scanner with Double-Wordline and Double-Bitline Structure

H. Kawaguchi; S. Iba; Y. Kato; T. Sekitani; T. Someya; T. Sakurai IEEE Sensors Journal, 2006

This paper describes a sheet-type scanner and its circuits. The three- dimensional-stacked sheets comprise of two organic-transistor sheets and one organic-photodiode sheet, which enable double-wordline and double-bitline structure. The operation was compared with the conventional single-wordline and single-bitline scheme, and confirmed by measurement. The double-wordline and double-bitline structure reduces the line delay and power by a factor of five and ...


Mechanism of Resistive Switching in 3, 4, 9, 10 Perylenetetracarboxylic Dianhydride (PTCDA) Sandwiched Between Metal Electrodes

Ruchi Agrawal; Pramod Kumar; Subhasis Ghosh IEEE Transactions on Electron Devices, 2008

Electrical-field-induced resistive transitions in thin films of perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to a conducting state with a high ON-OFF ratio, have been studied. Temperature dependence of resistivity and scanning tunneling spectroscopic studies show insulating behavior in OFF state and metallic behavior in ON state. Devices with a thin intermediate layer of LiF between ...


Charge-based Mobility Modeling for Organic Semiconductors

T. K. Maiti; C. K. Maiti 2009 13th International Workshop on Computational Electronics, 2009

Charge transport in organic semiconductors is investigated and a theoretical description of small polaron dc conductivity model is presented. The approach is based on Frohlich Hamiltonian. The model is implemented in a device simulator to analyze the electrical characteristics of pentacene-based Organic Thin Film Transistors (OTFT).


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Educational Resources on OFETs

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eLearning

Modeling of fully printed organic field effect transistors for circuit design and simulation

Olka Kaveh; Bahman Kheradmand-Boroujeni; Daniel Kasemann; Karl Leo; Frank Ellinger 2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2016

Organic field effect transistors (OFETs) have significantly improved during recent years. However, there is still a lack of complete compact models for these devices, due to different materials, device structures, and manufacturing processes. Previous studies on compact OFET modeling have only considered static I-V characteristics, which are subject to the bias-stress effect. In this study, for the first time, two ...


Extracting Contact Effects in Organic FETs

B. H. Hamadani; D. Natelson Proceedings of the IEEE, 2005

Contact resistances between organic semiconductors and metal electrodes have been shown to play a dominant role in electronic charge injection properties of organic FETs (OFETs). These effects are more prevalent in short channel length devices and therefore should not be ignored when examining intrinsic properties such as the mobility and its dependence on temperature or gate voltage. Here we outline ...


A 3-D-Stack Organic Sheet-Type Scanner with Double-Wordline and Double-Bitline Structure

H. Kawaguchi; S. Iba; Y. Kato; T. Sekitani; T. Someya; T. Sakurai IEEE Sensors Journal, 2006

This paper describes a sheet-type scanner and its circuits. The three- dimensional-stacked sheets comprise of two organic-transistor sheets and one organic-photodiode sheet, which enable double-wordline and double-bitline structure. The operation was compared with the conventional single-wordline and single-bitline scheme, and confirmed by measurement. The double-wordline and double-bitline structure reduces the line delay and power by a factor of five and ...


Mechanism of Resistive Switching in 3, 4, 9, 10 Perylenetetracarboxylic Dianhydride (PTCDA) Sandwiched Between Metal Electrodes

Ruchi Agrawal; Pramod Kumar; Subhasis Ghosh IEEE Transactions on Electron Devices, 2008

Electrical-field-induced resistive transitions in thin films of perylenetetracarboxylic dianhydride sandwiched between two metal electrodes, from an insulating state to a conducting state with a high ON-OFF ratio, have been studied. Temperature dependence of resistivity and scanning tunneling spectroscopic studies show insulating behavior in OFF state and metallic behavior in ON state. Devices with a thin intermediate layer of LiF between ...


Charge-based Mobility Modeling for Organic Semiconductors

T. K. Maiti; C. K. Maiti 2009 13th International Workshop on Computational Electronics, 2009

Charge transport in organic semiconductors is investigated and a theoretical description of small polaron dc conductivity model is presented. The approach is based on Frohlich Hamiltonian. The model is implemented in a device simulator to analyze the electrical characteristics of pentacene-based Organic Thin Film Transistors (OTFT).


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