OFETs
350 resources related to OFETs
Conferences related to OFETs
Back to Top2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012)
Visit websiteDevoted to fundamental understanding of the physical mechanisms of semiconductor device failures and issues related to semiconductor device reliability and yield\, especially those related to advanced process technologies.
2012 70th Annual Device Research Conference (DRC)
Visit websiteFor more than sixty years\, the Device Research Conference has brought together leading scientists\, researchers\, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited\, oral\, and poster presentations. In addition\, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com
2011 14th International Symposium on Electrets ISE 14
Topics covered will include: # Charge injection, transport & trapping # Thermally stimulated current & dielectric relaxation # Nanoscale measurements of electrostatic phenomena # Ferroelectric, piezoelectric & pyroelectric phenomena # Ferroelectret & photoelectret # Electrostatic & dielectric phenomena in life science: bioelectret # Non-linear electrical & optical effects # Application of thin film ferroelectric # Electrets in organic electronics # Soft actuators & sensors
2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)
This conference provides the good possibilities to young specialists\, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Visit websiteSilicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .
Xplore Articles related to OFETs
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A Simple and Direct Method for Interface Characterization of OFETs
Srinivas, P.; Tiwari, S.P.; Raval, H.N.; Ramesh, R.N.; Cahyadi, T.; Mhaisalkar, S.G.; Rao, V.R. Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the, 2007
Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO<sub>2</sub> as the gate dielectric. Our results show interface state densities in the ...
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Wang, A.; Kymissis, I.; Bulovic, V.; Akinwande, A.I. Electron Devices, IEEE Transactions on, 2006
Threshold-voltage control is critical to the further development of pentacene organic field-effect transistors (OFETs). In this paper, we demonstrate that the threshold voltage can be tuned through chemical treatment of the gate dielectric layer. We show that oxygen plasma treatment of an organic polymer gate dielectric, parylene, introduces traps at the semiconductor-dielectric interface that strongly affect the OFET performance. Atomic ...
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Deshmukh, K.D.; West, James E.; Katz, H.E. Electrets, 2008. ISE-13. 13th International Symposium on, 2008
Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of ...
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Direct extraction of mobility in pentacene OFETs using C-V and I-V measurements
Ryu, K.; Kymissis, I.; Bulovic, V.; Sodini, C.G. Electron Device Letters, IEEE, 2005
Mobility was extracted from top-contact pentacene organic field effect transistors with minimal assumptions. Low-frequency capacitance-voltage (C-V) measurements were used to calculate the sheet charge density of the channel, and current-voltage measurements with low drain-to-source voltage were used to extract mobility. The separation of charge and mobility with the use of C-V measurements illustrates that the mobility increases with gate voltage, ...
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Bilayer organic field-effect transistors (OFETs) with better stability
Liu, Ge; Liu, Ming; Liwei Shang; Deyu Tu; Lijuan Zhen; Xinghua Liu Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on, 2008
Double active layer OFETs were fabricated, based on two-step vacuum-deposition process. Pentacene deposited at room temperature acted as the active layer, and subsequently, CuPcs was deposited above the pentacene which acted as a protecting layer for the active layer. Due to the same electrical characteristics but different morphology, the bilayer structure was effective to decrease the contamination of impurity and ...
Periodicals related to OFETs
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Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
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Electron Devices, IEEE Transactions on
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
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The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...