265 resources related to OFETs
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2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R
2014 IEEE 15th International Symposium on Electrets ISE 15
Electrets and related phenomena continue to receive much interest both from the fundamentaland applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, …) and, hence, is at the frontier of many scientific domains.The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materials science and engineering, condensed matter physics and chemistry, and a chance for communicating about recent advances and research and development efforts in these areas. It also provides a forum for in-depth discussions between the most experienced and established scientists and engineers and young researchers.
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms
For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.
2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)
This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...
Becker, Eike; Johannes, H.; Benstem, T.; Dobbertin, Thomas; Heithecker, Dirk; Metzdorf, Dirk; Neuner, H.; Kowalsky, W. Polymers and Adhesives in Microelectronics and Photonics, 2001. First International IEEE Conference on, 2001
We present a new technique for structuring polymeric interconnects and drain/source contacts of organic field-effect transistors in polymer integrated circuits. Our method is based on the selective electrochemical polymerisation of conductive polymers (e.g. PEDOT) on electrodes partially covered with a patterned insulating layer and the subsequent transfer of the polymeric structure to a flexible plastic substrate. Lateral resolutions of 10 ...
Someya, T.; Kato, Y.; Iba, S.; Noguchi, Y.; Sekitani, T.; Kawaguchi, H.; Sakurai, T. Electron Devices, IEEE Transactions on, 2005
A large-area, flexible, and lightweight sheet image scanner has been successfully manufactured on a plastic film by integrating high-quality organic transistors and organic photodetectors. The effective sensing area of the integrated device is 5×5 cm2; the resolution, 36 dots per inch (dpi); and the total number of sensor cells, 5184. The pentacene transistors with top contact geometry have a channel ...
Zanella, F.; von Muhlenen, A.; Szamel, Z.; Nisato, G.; Enz, C.; Sallese, J.-M. Mixed Design of Integrated Circuits and Systems (MIXDES), 2011 Proceedings of the 18th International Conference, 2011
In this paper we show based on experiments that an invariant representation exists for various polymer-based solution processable organic thin film transistors (OTFTs). Despite the fact that this technology suffers from a non- negligible spread of parameters, all experimental data exhibit low dispersion when represented in a gm/ID versus ID diagram. This result is important for circuit design strategy based ...
Yoo, Byungwook; Basu, D.; Jung, Taeho; Fine, Daniel; Jones, B.A.; Facchetti, A.; Wasielewski, Michael R.; Marks, T.J.; Dimmler, K.; Dodabalapur, Ananth Device Research Conference, 2006 64th, 2006
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Manaka, T.; Iwamoto, M. Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013 Twentieth International Workshop on, 2013
Anisotropic carrier transport characteristics in single crystalline grains of dip-coated TIPS pentacene films were studied using the time-resolved microscopic second harmonic generation (TRM-SHG). TRM-SHG imaging successfully visualized a difference in the transient carrier motion along various transport direction in ab-plane of TIPS pentacene single crystal. Mobility anisotropy observed in ab-plane was estimated as μPARA /μPERP = 3. We also applied ...
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