271 resources related to OFETs
- Topics related to OFETs
- IEEE Organizations related to OFETs
- Conferences related to OFETs
- Periodicals related to OFETs
- Most published Xplore authors for OFETs
2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R
2014 IEEE 15th International Symposium on Electrets ISE 15
Electrets and related phenomena continue to receive much interest both from the fundamentaland applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, …) and, hence, is at the frontier of many scientific domains.The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materials science and engineering, condensed matter physics and chemistry, and a chance for communicating about recent advances and research and development efforts in these areas. It also provides a forum for in-depth discussions between the most experienced and established scientists and engineers and young researchers.
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms
For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.
2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)
This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...
Ozgun, R.; Katz, H.E.; Andreou, A.G. Microsystems for Measurement and Instrumentation (MAMNA), 2013, 2013
In this paper, we report organic semiconductor based diodes, the silicon-on- insulator (SOI) integration technique with organic field effect transistors (OFET) for configurable diode arrays and sensors. We utilize the vertical organic diode approach, in which a layer of organic semiconductor (pentacene) is sandwiched between Au- and Al-electrodes such that one of the electrodes (Au) creates a homojunction with pentacene ...
Schwodiauer, R.; Bauer, Siegfried; Singh, Birendra; Marjanovic, Nenad; Sariciftci, N.S. Electrets, 2005. ISE-12. 2005 12th International Symposium on, 2005
The basic element in organic electronics is the organic field effect transistor, consisting of an organic semiconductor and a gate dielectric. Whereas organic semiconductors are widely investigated, much less attention is paid for the search on organic gate dielectrics. Space-charge and dipole electrets offer a huge potential as gate dielectrics in organic field effect transistors. An example is the development ...
Bauer-Gogonea, S.; Schwodiauer, R.; Bauer, S.; Stadlober, B.; Zirkl, M.; Beutl, M.; Leising, G. Electrets, 2005. ISE-12. 2005 12th International Symposium on, 2005
The high dielectric constant of dipolar charge electrets makes these materials attractive as gate dielectric in organic field effect transistors (OFET). Additionally, dipole electrets may even provide functionalities to such devices, like permanently polarized gate dielectrics for nonvolatile memories as well as pyro- or piezoelectric OFETs. Organic thin film transistors in top- contact geometry with pentacene as semiconductor and double ...
Tinivella, R.; Shen, S.; Pirola, M.; Ghione, G.; Camarchia, V. Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, 2010
A device-level SPICE library based on an integrated organic pentacene OFET process by Philips has been developed to carry out the design of the analog and digital subsystems required in the implementation of low-cost high volume RFIDs. The OFET model was fitted through the use of a modified MOSFET SPICE model. Simulations are shown to validate the technological choice and ...
Narayan, K.S.; Madhushankar, B.N.; Gautam, V.; Senanayak, S.P.; Shivanna, R. Electron Device Letters, IEEE, 2013
The water-gated phospholipid (PL) organic field effect transistor (OFET) is reported with substantial field effect mobility and on-off ratio. We modified the Mueller-Montal method for lipid growth to form the self-assembled monolayer of PL as the dielectric over the semiconducting polymer film. This realized device structure poses potential application as a biocompatible low- operating-voltage transistor.
No standards are currently tagged "OFETs"