Conferences related to OFETs

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2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2014 IEEE 15th International Symposium on Electrets ISE 15

Electrets and related phenomena continue to receive much interest both from the fundamentaland applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, …) and, hence, is at the frontier of many scientific domains.The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materials science and engineering, condensed matter physics and chemistry, and a chance for communicating about recent advances and research and development efforts in these areas. It also provides a forum for in-depth discussions between the most experienced and established scientists and engineers and young researchers.

  • 2011 IEEE 14th International Symposium on Electrets ISE 14

    Topics covered will include: # Charge injection, transport & trapping # Thermally stimulated current & dielectric relaxation # Nanoscale measurements of electrostatic phenomena # Ferroelectric, piezoelectric & pyroelectric phenomena # Ferroelectret & photoelectret # Electrostatic & dielectric phenomena in life science: bioelectret # Non-linear electrical & optical effects # Application of thin film ferroelectric # Electrets in organic electronics # Soft actuators & sensors

  • 2008 13th International Symposium on Electrets ISE 13

    Electrets and related phenomena originating from charge injection, storage and transport, and applied to storage, transport and conversion devices.


2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms


2012 70th Annual Device Research Conference (DRC)

For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.

  • 2011 69th Annual Device Research Conference (DRC)

    The Device Research Conference brings together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations.

  • 2010 68th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2009 67th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2008 66th Annual Device Research Conference (DRC)

    For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com

  • 2007 65th Annual Device Research Conference (DRC)

    For more than sixty years, the DRC has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions.

  • 2006 64th Annual Device Research Conference (DRC)

  • 2005 63rd Annual Device Research Conference (DRC)


2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)

This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.



Periodicals related to OFETs

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Proceedings of the IEEE

The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...




Xplore Articles related to OFETs

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Charged OFETS: Tuning of threshold voltage and off-current of organic transistors for adaptable circuits and amplifiers

K. D. Deshmukh; James E. West; H. E. Katz 2008 13th International Symposium on Electrets, 2008

Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of ...


The Current Vibration in 2-(4-Hydroxyphenyl)-5-Pyrimidinal Solution by Field Effect

Jiac Hun Deng; Zhong Qiang Wang; Na Jin; Shou Gen Yin; Yu Lin Hua 2008 2nd International Conference on Bioinformatics and Biomedical Engineering, 2008

A liquid organic field effect transistor (LOFET) which active material was a polarizable chemical (2-(4-hydroxyphenyl)-5-pyrimidinal) was fabricated. The current through source electrode and drain electrode presented the vibration with the measured time under the different Gate voltage. The dependence of the periodical vibration time on Gate voltage was obtained. We supposed a polarized model to explain this vibration current phenomenon.


Low Power and Flexible Braille Sheet Display with Organic FET's and Plastic Actuators

M. Takamiya; T. Sekitani; Y. Kato; H. Kawaguchi; T. Someya; T. Sakurai 2006 IEEE International Conference on IC Design and Technology, 2006

Organic FETs (OFETs) are integrated with actuators, and a Braille sheet display is demonstrated. A newly developed back-gated OFETs SRAM and the circuits technology for the Braille sheet display to enhance speed, yield and lifetime are presented, which will be essential for future large-area electronics made with OFETs


Effect of opposite side electrodes in organic field-effect transistor structure

Rawat Jaisutti; Wittawat Yamwong; Sirapat Pratontep; Tanakorn Osotchan Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on, 2009

For nanoscale devices, the source and drain electrodes in organic filed effect transistor (OFET) are usually placed on the opposite side of the insulator and gate electrode. While the conventional model to describe FET was extracted from the planar structure with all electrodes laid in the same side. Therefore the effect of the opposite side electrode OFET structure was investigated ...


Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs

T. Yokoyama; T. Nishimura; K. Kita; K. Kyuno; A. Toriumi 63rd Device Research Conference Digest, 2005. DRC '05., 2005

This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a ...


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Educational Resources on OFETs

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eLearning

Charged OFETS: Tuning of threshold voltage and off-current of organic transistors for adaptable circuits and amplifiers

K. D. Deshmukh; James E. West; H. E. Katz 2008 13th International Symposium on Electrets, 2008

Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of ...


The Current Vibration in 2-(4-Hydroxyphenyl)-5-Pyrimidinal Solution by Field Effect

Jiac Hun Deng; Zhong Qiang Wang; Na Jin; Shou Gen Yin; Yu Lin Hua 2008 2nd International Conference on Bioinformatics and Biomedical Engineering, 2008

A liquid organic field effect transistor (LOFET) which active material was a polarizable chemical (2-(4-hydroxyphenyl)-5-pyrimidinal) was fabricated. The current through source electrode and drain electrode presented the vibration with the measured time under the different Gate voltage. The dependence of the periodical vibration time on Gate voltage was obtained. We supposed a polarized model to explain this vibration current phenomenon.


Low Power and Flexible Braille Sheet Display with Organic FET's and Plastic Actuators

M. Takamiya; T. Sekitani; Y. Kato; H. Kawaguchi; T. Someya; T. Sakurai 2006 IEEE International Conference on IC Design and Technology, 2006

Organic FETs (OFETs) are integrated with actuators, and a Braille sheet display is demonstrated. A newly developed back-gated OFETs SRAM and the circuits technology for the Braille sheet display to enhance speed, yield and lifetime are presented, which will be essential for future large-area electronics made with OFETs


Effect of opposite side electrodes in organic field-effect transistor structure

Rawat Jaisutti; Wittawat Yamwong; Sirapat Pratontep; Tanakorn Osotchan Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on, 2009

For nanoscale devices, the source and drain electrodes in organic filed effect transistor (OFET) are usually placed on the opposite side of the insulator and gate electrode. While the conventional model to describe FET was extracted from the planar structure with all electrodes laid in the same side. Therefore the effect of the opposite side electrode OFET structure was investigated ...


Energy level consideration of source/channel/drain for performance enhancements of N- and P-channel organic FETs

T. Yokoyama; T. Nishimura; K. Kita; K. Kyuno; A. Toriumi 63rd Device Research Conference Digest, 2005. DRC '05., 2005

This paper discusses a possible way to achieve better FET performances for both channels as well as a determination mechanism of the channel type. We investigated perfluoropentace (C22F14) (PF-pentacene) for n-channel and pentacene (C22F14) for p-channel FETs. On the basis of the energy level consideration for both channel material and S/D metals, we show a systematic guideline for achieving a ...


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