267 resources related to OFETs
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2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R
2014 IEEE 15th International Symposium on Electrets ISE 15
Electrets and related phenomena continue to receive much interest both from the fundamentaland applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, …) and, hence, is at the frontier of many scientific domains.The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materials science and engineering, condensed matter physics and chemistry, and a chance for communicating about recent advances and research and development efforts in these areas. It also provides a forum for in-depth discussions between the most experienced and established scientists and engineers and young researchers.
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms
For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.
2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)
This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...
Murmann, B.; Wei Xiong Computer-Aided Design (ICCAD), 2010 IEEE/ACM International Conference on, 2010
Organic field-effect transistors (OFETs) can be manufactured at low temperatures, enabling the fabrication of integrated circuits on flexible plastic substrates and the coverage of large areas at potentially low cost. This paper evaluates state-of-the-art OFET technology from the perspective of the analog circuit designer. Specifically, we review important OFET device performance metrics in comparison to generic silicon CMOS transistors. In ...
Loi, A.; Basirico, L.; Cosseddu, P.; Lai, S.; Barbaro, M.; Bonfiglio, A.; Maiolino, P.; Baglini, E.; Denei, S.; Mastrogiovanni, F.; Cannata, G. Sensors Journal, IEEE, 2013
In this paper we propose a detailed investigation on the electrical response to mechanical deformations of organic field effect transistors assembled on flexible plastic substrates. We demonstrate that through applying a surface deformation by an external mechanical stimulus we induce morphological and structural changes in the organic semiconductor giving rise to a marked, reproducible and reversible variation of the device ...
Hacker, C.A. Semiconductor Device Research Symposium, 2009. ISDRS '09. International, 2009
Modifying the electrical properties of the silicon interface is of prime interest for next generation electronics. Scaling of conventional electronics is increasing the importance of electronic contributions from the near surface region while bulk contributions are becoming less important. We report a detailed ultraviolet photoelectron spectroscopy (UPS) and X-ray photoelectron spectroscopy (XPS) investigation of the electronic properties of the silicon ...
Tiwari, S.; Tiwari, S.; Prakash, R.; Balasubramanian, S.K. India Conference (INDICON), 2013 Annual IEEE, 2013
Top contact organic thin-film field effect transistors based on regioregular poly(3-butylthiophene-2,5-diyl) (P3BT), poly(3-dodecylthiophene-2,5-diyl) (P3DDT) and poly(3-hexylthiophene-2,5-diyl) (P3HT) of similar concentration were fabricated by spin coating technique. The current-voltage (I-V) characteristics of these three different polymer based organic field-effect transistors (OFETs) were studied. The device performance parameters for each kind of OFET were estimated with the help of measured electrical characteristics ...
Bartic, C.; Campitelli, A.; Baert, K.; Suls, J.; Borghs, S. Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International, 2000
In this paper we describe a new application for organic field-effect transistors (OFETs) as sensing devices for charge detection in aqueous media. The detection principle is based on the field-enhanced conduction that occurs in organic semiconductors in a similar way as in the crystalline inorganic ones. The electrochemical potential developed at the solution/dielectric interface is responsible for the charge-sensitivity. To ...
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