266 resources related to OFETs
- Topics related to OFETs
- IEEE Organizations related to OFETs
- Conferences related to OFETs
- Periodicals related to OFETs
- Most published Xplore authors for OFETs
2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R
2014 IEEE 15th International Symposium on Electrets ISE 15
Electrets and related phenomena continue to receive much interest both from the fundamentaland applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, …) and, hence, is at the frontier of many scientific domains.The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materials science and engineering, condensed matter physics and chemistry, and a chance for communicating about recent advances and research and development efforts in these areas. It also provides a forum for in-depth discussions between the most experienced and established scientists and engineers and young researchers.
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms
For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.
2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)
This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...
Tardy, J.; Erouel, M.; Deman, A.L.; Gagnaire, A.; Jaffrezic, N.; Teodorescu, V.; Blanchin, G.; Canut, B.; Barau, A.; Zaharescu, M. Polymers and Adhesives in Microelectronics and Photonics, Polytronic, 2005. Polytronic 2005. 5th International Conference on, 2005
We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO2gate oxide. HfO2layers were prepared by two different methods: anodic oxidation and sol-gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol-gel deposited oxide films were obtained following an annealing at 450°C. They lead to ...
Seena, V.; Nigam, Akash; Pant, P.; Mukherji, S.; Rao, V.R. Microelectromechanical Systems, Journal of, 2012
Nanomechanical cantilever based biochemical sensors translate molecular interactions into nanomechanical motions that can be measured by different transduction techniques. Improved sensitivity, reliability, and also cost effectiveness of such sensor platforms have been achieved by the use of polymer materials, along with the employment of smart and compatible transduction techniques. This paper explores an ultrasensitive nanomechanical cantilever sensor platform with a ...
Suemori, Kouji; Taniguchi, M.; Kamata, Toshihide Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on, 2008
The influence of the dipole of an insulator surface on temporal changes in the source-drain current was investigated by using organic field-effect transistors with a surface-modified SiO2 insulator. The source-drain current decreased drastically with respect to time when the dipoles of the insulator surface displaced slightly. In order to obtain highly stable organic transistors, it is thus necessary to remove ...
Min Liao; Ishiwara, Hiroshi; Ohmi, S. Electron Device Letters, IEEE, 2011
Low-voltage operating pentacene-based organic field-effect transistors (OFETs) with a HfON gate insulator have been fabricated with a fully room-temperature process. Despite its thin capacitance equivalent thickness of 3.3 nm, the room-temperature-processed HfON gate insulator shows a low leakage current density of 7 × 10-7 A/cm2 at a gate voltage of -2 V. Moreover, the fully room- temperature-fabricated OFET (channel _W_/_L_ ...
Chang Hyun Kim; Castro-Carranza, A.; Estrada, M.; Cerdeira, A.; Bonnassieux, Y.; Horowitz, G.; Iniguez, B. Electron Devices, IEEE Transactions on, 2013
Here, we propose an advanced compact analytical current-voltage model for organic field-effect transistors (OFETs), which can be incorporated into SPICE-type circuit simulators. We improved the output saturation behavior by introducing a new asymptotic function that also enables more precise low- voltage current and conductance fitting. A new expression for the subthreshold current was suggested to cover all operation regimes of ...
No standards are currently tagged "OFETs"