267 resources related to OFETs
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2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R
2014 IEEE 15th International Symposium on Electrets ISE 15
Electrets and related phenomena continue to receive much interest both from the fundamentaland applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, …) and, hence, is at the frontier of many scientific domains.The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materials science and engineering, condensed matter physics and chemistry, and a chance for communicating about recent advances and research and development efforts in these areas. It also provides a forum for in-depth discussions between the most experienced and established scientists and engineers and young researchers.
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms
For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies.
2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)
This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...
Minari, T.; Chuan Liu Interconnect Technology Conference (IITC), 2013 IEEE International, 2013
The large contact resistance (Rc) in organic field-effect transistors (OFET) is one of the main limitation factors which prevent the reliable operation and further reduction in device dimensions. In this paper, we report dependence of the Rc on the gate dielectric materials, which means that the density of charge traps in access region (from contact to channel) of devices plays ...
Watanabe, Yasuyuki; Kudo, Kazuhiro Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on, 2005
We have fabricated pentacene static induction transistors (SITs) on both Au and indium tin oxide (ITO) formed on glass substrate at room temperature using the vacuum evaporation method.
Trigaud, T.; El Jazairi, I.; Kwon, S.Y.; Bernical, V.; Moliton, J.P. IEEE Industrial Electronics, IECON 2006 - 32nd Annual Conference on, 2006
Here is studied a process for the fabrication of a transparent all organic field effect transistor (OTFT) in a low cost way, without clean room. A major difficulty lies in the fact that substratum is CR39reg, an organic glass. Pentacene, PMMA, and ITO are implemented as respectively semiconductor, insulator, and materials for source, drain and gate electrodes. In preliminary results, ...
Plugaru, R.; Anghel, C.; Ionescu, A.M. International Semiconductor Conference, 2006, 2006
This paper reports on organic FET transistors (OFETs) fabricated on silicon substrates using pentacene as active organic layer and gold as source and drain contacts. Photogenerated currents by a 625nm wavelength laser are experimentally observed. The observed light-induced increase of OFFT drain current by three-to-six orders of magnitude, depending on device operation and geometry suggests their potential for future light ...
Kawaguchi, H.; Iba, S.; Kato, Y.; Sekitani, T.; Someya, T.; Sakurai, T. Sensors Journal, IEEE, 2006
This paper describes a sheet-type scanner and its circuits. The three- dimensional-stacked sheets comprise of two organic-transistor sheets and one organic-photodiode sheet, which enable double-wordline and double-bitline structure. The operation was compared with the conventional single-wordline and single-bitline scheme, and confirmed by measurement. The double-wordline and double-bitline structure reduces the line delay and power by a factor of five and ...
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