39 resources related to OFETs
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2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
Process & Device Technologies 1. Channel Engineering 2. High-k/Metal gate Technology 3. Advanced Source/Drain Technology 4. Interconnect Technology 5. Advanced 3D Integration 6. Novel Process Technologies 7. Ultra-Thin Body Transistors and Device Variability 8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs 11. CNT, MTJ Devices and Nanowire Photodiodes 12. Low- Power and Steep Slope Switching Devices
2014 IEEE 15th International Symposium on Electrets ISE 15
Electrets and related phenomena continue to receive much interest both from the fundamental and applied points of views. Charge storage in insulators is crucial for many applications, involves a wide range of materials (organic, inorganic, hybrid, powder, thin & thick films, bulk, porous, ) and, hence, is at the frontier of many scientific domains. The ISE is therefore a unique meeting opportunity for scientists and engineers from all over the world working in the field of electrical engineering, materi
2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and Approaches Novel Device Reliability and Failure Mechanisms Novel Gate Stack/Dielectrics and FEOL Reliability and Failure Mechanisms Advanced Interconnects and BEOL Reliability and Failure Mechanisms
For more than sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from varied disciplines in academia and industry to share their latest research and discoveries in the field of electronic devices. The technical program will be a mix of invited, oral, and poster presentations. In addition, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of com
2011 IEEE 2nd International Student School and Seminar on Modern Problems of Micro- and Nanoelectronics (INTERNANO)
This conference provides the good possibilities to young specialists, graduate and postgraduate students to have a discussions with high quality professors and industrial specialists about a modern problems in developing the micro- and nanosystem technologies. As well this conference provides a possibility to make acquaintance with start-of-the-art in the field of nanoengineering.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
The most highly-cited general interest journal in electrical engineering and computer science, the Proceedings is the best way to stay informed on an exemplary range of topics. This journal also holds the distinction of having the longest useful archival life of any EE or computer related journal in the world! Since 1913, the Proceedings of the IEEE has been the ...
Srinivas, P.; Tiwari, S.P.; Raval, H.N.; Ramesh, R.N.; Cahyadi, T.; Mhaisalkar, S.G.; Rao, V.R. Physical and Failure Analysis of Integrated Circuits, 2007. IPFA 2007. 14th International Symposium on the, 2007
Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO2 as the gate dielectric. Our results show interface state densities in the ...
Ismail, L.N.; Habibah, Z.; Abdullah, M.H.; Herman, S.H.; Rusop, M. Electronic Devices, Systems and Applications (ICEDSA), 2011 International Conference on, 2011
Poly (methy-methacrylate) (PMMA) thin films were deposited by sol-gel spin coating method on glass substrates. PMMA powder was dissolved in 60ml Toluene with the concentration of the PMMA in the solution was varied from 30 ~ 120 mg. Besides the PMMA concentration, we also studied the effect of the thin films thickness on the electrical properties. The results for electrical ...
Loffredo, F.; Grimaldi, I.A.; Miscioscia, R.; Nenna, G.; Villani, F.; Minarini, C.; Petrosino, M.; Rubino, A.; Husta, H.; Facchetti, A. Display Technology, Journal of, 2014
In the present work, bottom-gate top-contact organic field effect transistors (OFETs) were fabricated by evaporating a pentacene semiconductor film on top of a new insulating poly(methyl methacrylate) (PMMA) copolymer containing acrylate units. The PMMA copolymer was synthesized in order to combine the well-known insulating properties of PMMA with the possibility to be efficiently photocured enabling photopatterning-based organic circuitry integration processes. ...
Deshmukh, K.D.; West, James E.; Katz, H.E. Electrets, 2008. ISE-13. 13th International Symposium on, 2008
Printing processes like gravure and off-set are being developed for flexible logic circuits. Different devices with consistent properties are needed in single circuits. This can be achieved by embedding preset, tuning charges in the Organic Field Effect Transistor (OFET) gate dielectric. If desired, contrasting characteristics can be obtained for different devices in the same way. This reduces the number of ...
Ryu, K.; Kymissis, I.; Bulovic, V.; Sodini, C.G. Electron Device Letters, IEEE, 2005
Mobility was extracted from top-contact pentacene organic field effect transistors with minimal assumptions. Low-frequency capacitance-voltage (C-V) measurements were used to calculate the sheet charge density of the channel, and current-voltage measurements with low drain-to-source voltage were used to extract mobility. The separation of charge and mobility with the use of C-V measurements illustrates that the mobility increases with gate voltage, ...
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