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Nitrogen is a chemical element that has the symbol N, atomic number of 7 and atomic mass 14.00674 u. (

Conferences related to Nitrogen

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power

2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

The ITherm Conference series is the leading international venue for scientific and engineering exploration ofthermal, thermomechanical, and emerging technology issues associated with electronic devices, packages, and systems.

2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.

2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018)

Covering terahertz, far infrared and millimeter wave science, technology and applications

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Periodicals related to Nitrogen

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission

Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.

Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...

Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.

Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.

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Most published Xplore authors for Nitrogen

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Xplore Articles related to Nitrogen

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Thermal bubble dynamics in cryogenic liquids under non-uniform electric fields on superconducting power apparatus

[{u'author_order': 1, u'affiliation': u'Southampton Univ., UK', u'full_name': u'P. Wang'}, {u'author_order': 2, u'affiliation': u'Southampton Univ., UK', u'full_name': u'D. J. Swaffield'}, {u'author_order': 3, u'affiliation': u'Southampton Univ., UK', u'full_name': u'P. L. Lewin'}, {u'author_order': 4, u'affiliation': u'Southampton Univ., UK', u'full_name': u'G. Chen'}] CEIDP '05. 2005 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2005., None

Thermal bubbles in the liquid coolant of superconducting and cryogenic apparatus are considered to be one of the factors that reduce the electrical breakdown voltage of the apparatus. This paper describes an experimental study of the influence of a non-uniform electric field on bubble behaviour and motion in liquid nitrogen. The electric field effect is quantitatively investigated by performing experiments ...

Breakdown characteristics of liquid nitrogen under composite voltages

[{u'author_order': 1, u'affiliation': u'Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India', u'full_name': u'R. K. Sahu'}, {u'author_order': 2, u'affiliation': u'Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India', u'full_name': u'M. K. Pradhan'}, {u'author_order': 3, u'affiliation': u'Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India', u'full_name': u'R. Sarathi'}] CEIDP '05. 2005 Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2005., None

In the present work, a carefully designed experimental set up has been used to measure breakdown voltages (BDV) of LN2 under realistic conditions which are likely to be encountered in the complex electrical systems in the field. Different electrode profiles viz. sphere-sphere, needle-plane has been used to simulate various practical conditions. The Authors particularly focuses on the breakdown characteristics of ...

Characterization of nitrogenation of Sm/sub 2/Fe/sub 17/

[{u'author_order': 1, u'affiliation': u'TDK Corporation', u'full_name': u'A. Fukuno'}, {u'author_order': 2, u'full_name': u'C. Ishizaka'}, {u'author_order': 3, u'full_name': u'H. Chihara'}, {u'author_order': 4, u'full_name': u'T. Yoneyama'}] 1992 IEEE International Magnetics Conference (INTERMAG), None

First Page of the Article ![](/xploreAssets/images/absImages/00696378.png)

Development of a 22 kV/6.9 kV single-phase model for a 3 MVA HTS power transformer

[{u'author_order': 1, u'affiliation': u'Kyushu Univ., Fukuoka, Japan', u'full_name': u'K. Funaki'}, {u'author_order': 2, u'full_name': u'M. Iwakuma'}, {u'author_order': 3, u'full_name': u'K. Kajikawa'}, {u'author_order': 4, u'full_name': u'M. Hara'}, {u'author_order': 5, u'full_name': u'J. Suchiro'}, {u'author_order': 6, u'full_name': u'T. Ito'}, {u'author_order': 7, u'full_name': u'Y. Takata'}, {u'author_order': 8, u'full_name': u'T. Bohno'}, {u'author_order': 9, u'full_name': u'S. -I. Nose'}, {u'author_order': 10, u'full_name': u'M. Konno'}, {u'author_order': 11, u'full_name': u'Y. Yagi'}, {u'author_order': 12, u'full_name': u'H. Maruyama'}, {u'author_order': 13, u'full_name': u'T. Ogata'}, {u'author_order': 14, u'full_name': u'S. Yoshida'}, {u'author_order': 15, u'full_name': u'K. Ohashi'}, {u'author_order': 16, u'full_name': u'H. Kimura'}, {u'author_order': 17, u'full_name': u'K. Tsutsumi'}] IEEE Transactions on Applied Superconductivity, 2001

We have developed a 22 kV/6.9 kV HTS single-phase transformer cooled by liquid nitrogen for field test, which is a practical model for the single-phase part of a 3 MVA HTS power transformer. First, we numerically simulated electromagnetic, mechanical and thermal conditions of the windings in accidental cases of short-circuit and lightning impulse, and considered the winding structure withstanding the ...

Rare-earth transition metal carbides

[{u'author_order': 1, u'affiliation': u'University of Delaware', u'full_name': u'Z. X. Tang'}, {u'author_order': 2, u'full_name': u'E. W. Singleton'}, {u'author_order': 3, u'full_name': u'G. C. Hadjipanayis'}] 1992 IEEE International Magnetics Conference (INTERMAG), None

First Page of the Article ![](/xploreAssets/images/absImages/00696377.png)

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Educational Resources on Nitrogen

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  • Cryogenics

    This chapter discusses ways of cooling detectors, some associated calculations, measuring the temperatures, and the safety hazards. Work at low temperatures require calculations of the time required for components to cool, the ultimate temperature they will reach, and the amount of cryogen used in the cooling process. The chapter also discusses the thermal properties and how the required calculations are done. Conduction from room temperature into the cryogen is minimized by using supports with the smallest possible cross section and as long as possible. The measurement of temperatures is an important part of cryogenics. Several potential safety hazards exist when working with cryogens, but simple precautions are available to protect against all of them. If miniature gas lines (used to supply gaseous nitrogen to open‐cycle refrigerators) should break while under pressure, they can whip around, causing serious cuts or eye damage.

  • Emission Control Systems

    The operation of power plants to convert chemical, mechanical, thermal, or other energy resources to electrical energy for the transmission of energy to end users involves some production of byproducts. Operational permitting requirements place limits on both the quantity and quality of these emissions of byproducts. This chapter reviews some of the restrictions on power generation facility operating emissions and the technologies used to control these emissions. All aspects of the power plant operation are subject to regulation of emissions including any water streams from the plant including rainwater runoff, air emissions, and solid waste emissions. There are various concerns with the air emissions of a power plant which include particulate emissions, nitrogen oxide emission, and sulfur oxide emissions. Continuous emissions monitoring systems (CEMS) are used to continuously monitor the air emissions from a power generation facility to ensure compliance with permitting requirements.

  • Characterization Techniques and Defects in Silicon Carbide

    Characterization of the physical properties, doping densities, and defects in SiC is a fundamental tool in the development of SiC devices. Measurement of physical properties and identification of defect structures are important subjects of academic study. It is important to understand the various defects in SiC because many of them can adversely affect device performance and reliability. In this chapter we describe the fundamental material characterization techniques and present an overview of extended and point defects in SiC.

  • Review of Imbalanced Data Learning for Protein Methylation Prediction

    In this chapter, the authors focus on the study of computational predictions on this particular PTM-protein arginine methylation. They provide a comprehensive review of the study of arginine methylation prediction. They extensively investigate all existing methylation prediction methods and servers; thoroughly review all feature extracting schemes used for sequence encoding; and carefully summarize and compare all processing steps in their methodologies, including data collection, feature extraction and selection, classifier training and evaluation, and result discussion. Finally, the authors suggest several future directions that are worthy of continuous research on methylation predictions.

  • Device Processing of Silicon Carbide

    Many processing steps are required to fabricate complex electronic devices, including doping by ion implantation, patterning, etching, oxidation, passivation, and metallization. The process flow in SiC device fabrication is similar to that in silicon technology but several unique processes, with particular requirements, are also needed because of the unique physical and chemical properties of SiC. This chapter introduces the fundamental aspects and technological development of ion implantation, etching, oxidation, interface passivation, and Schottky and ohmic contacts in SiC.

  • DNA Sequencing

    This chapter introduces the latest development of Complementary Metal Oxide Semiconductor (CMOS)‐based multi‐modal sensor platform for personalized DNA detection, which includes: large‐array ion‐sensitive field‐effect transistor (ISFET) ‐based sequencing; terahertz (THz)‐based genotyping for single nucleotide polymorphism (SNP) detection; and beyond‐CMOS single‐molecule nanopore sequencing. A method used in ISFET sequencing is bead‐based selection, in which certain‐sized double‐stranded DNA will be bonded to a magnetic bead, under the existence of polyethylene glycol (PEG) and salt (NaCl). Brucherseifer first demonstrated that the binding state of DNA can be directly probed through its complex refractive index in the THz range. To realize high‐throughput sequencing, a large nanopore array can be integrated with a CMOS readout chip to reduce the cost and size of the system. Therefore, it is quite demanding to develop a CMOS‐compatible nanopore platform, which is also scalable for millions of DNA strands to be detected on a single chip simultaneously.

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