Neutron radiation effects
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The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.
2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)
This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993
The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space
George, W.L.; Clark, L.E. Electron Devices, IEEE Transactions on, 1970
This paper describes the physical phenomena which must be considered in designing a practical neutron-hardened n-p-v-n power transistor. It is shown that, in addition to resistivity increase in the collector and lifetime decrease in the base region, one must also consider increases in emitter-base space-charge recombination and decreases in emitter efficiency to completely characterize the device degradation. The most practical ...
Deng, Y.; Fjeldly, T.A.; Ytterdal, T.; Shur, M.S. Nuclear Science, IEEE Transactions on, 2003
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...
Radiation Effects Data Workshop, 2003. IEEE, 2003
The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.
Papastamatiou, M.; Arpatzanis, N.; Papaioannou, G.J.; Papastergiou, C.; Christou, A. Electron Devices, IEEE Transactions on, 1997
The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT's). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of ...
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