Neutron radiation effects
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The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.
2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)
This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993
The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space
Cooksey, J.A.; Brown, W.D.; Ang, S.S.; Naseem, H.A.; Ulrich, R.K.; West, L. Nuclear Science, IEEE Transactions on, 1994
The gamma-ray and neutron radiation hardness of YBa/sub 2/Cu/sub 3/O/sub 7-x/, Tl/sub 2/Ba/sub 2/CaCu/sub 2/O/sub 8+x/ and Tl/sub 2/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10+x/ superconducting thin films deposited by off-axis sputtering and laser-ablation deposition techniques on substrates of MgO and LaAlO/sub 3/ was investigated. The unbiased samples were irradiated with 662 keV gamma-rays up to a cumulative dose of 1.5 Mrad(Si) ...
Binns, J.E. Nuclear Science, Transactions of the Institute of Radio Engineers Professional Group on, 1954
Safe startup and operation of the nuclear reactor require neutron-sensing instruments to cover a range of about 109. This coverage is obtained by a counting rate meter, a period meter, and a high level power indicator. At normal operating levels, the reactor is regulated by the high level power controller and protected by the high level trips. Emergency shutdown of ...
Papastamatiou, M.; Arpatzanis, N.; Papaioannou, G.J.; Papastergiou, C.; Christou, A. Electron Devices, IEEE Transactions on, 1997
The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT's). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of ...
George, W.L.; Clark, L.E. Electron Devices, IEEE Transactions on, 1970
This paper describes the physical phenomena which must be considered in designing a practical neutron-hardened n-p-v-n power transistor. It is shown that, in addition to resistivity increase in the collector and lifetime decrease in the base region, one must also consider increases in emitter-base space-charge recombination and decreases in emitter efficiency to completely characterize the device degradation. The most practical ...
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