Conferences related to Neutron radiation effects

Back to Top

2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


2018 IEEE-NPSS Real Time Conference (RT)

Real time computing applications involving both hardware and software development in nuclear, particle, plasma and other related fields.


2017 12th International Forum on Strategic Technology (IFOST)

New materials and nanotechnologies , Information and communication technologies , Information and communication technologies , Power engineering and electric power electronics , etc


2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS international conference is held once a year in Europe, covering the latest progress in the field of radiation effects on electronics, optoelectronics devices and systems and their behaviou and reliability under ionizing high energy radiation. This conference aims at bringing together scientists and industry from space, aviation, ground applications and accelerators and at the same time industrial exhibitors, together initiating contracts, collaborations and paving the way to tomorrow’s requirements. This year’s conference is organized by CERN (European Laboratory for Nuclear Research). The first day of the conference will be covered by a short course entitled “From Space, To Ground and Below”, to introduce how to deal with radiation effects within different environments such as Space, Avionic, Ground Level and Particle accelerators. The technical program will then feature oral and poster technical sessions, a data workshop and an industrial exhibition.


2017 5th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA)

Nuclear instrumentation and measurement methods in nuclear environments are key aspects that contribute to the quality of scientific programmes in the fields of physics, energy, the fuel cycle and waste management. Furthermore, measurements relying on nuclear physics now play an important role in various fields of application such as biology, medicine and the environment. The ANIMMA conference aims at uniting, consolidating and organizing an international network of scientific researchers and experts from industry, research institutes, academic dealing with nuclear instrumentation and measurement methodology activities (R&D, Innovation and applications).ANIMMA 2017 is the fifth of a series of conferences devoted to endorsing and promoting scientific and technical activities based on nuclear instrumentation and measurements.The main objective of ANIMMA conference is to unite the various scientific communities not only involved in nuclear instrumentation and measurements, but also in

  • 2015 4th International Conference on Advancements in Nuclear InstrumentationMeasurement Methods and their Applications (ANIMMA)

    ANIMMA 2015 is the fourth of a series of conferences devoted to endorsing and promoting scientific and technical activities based on nuclear instrumentation and measurements. The main objective of ANIMMA conference is to unite the various scientific communities not only involved in nuclear instrumentation and measurements, but also in nuclear medicine and radiation. The conference is all about getting scientists, engineers and the industry to meet, exchange cultures and identify new scientific and technical prospects to help overcome both current and future unresolved issues. The ANIMMA conference provides scientists and engineers with a veritable opportunity to compare their latest research and development in different areas: physics, nuclear energy, nuclear fuel cycle, safety, security, future energies (GEN III+, GENIV, ITER, ...).

  • 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA)

    ANIMMA conference sets out to unite, consolidate and organize an international network of scientific, researcher and experts from industry, research institutes, academic dealing with nuclear instrumentation and measurement methodology activities (R&D, Innovation and applications).ANIMMA 2013 is the third of a series of conferences devoted to endorsing and promoting scientific and technical activities based on nuclear instrumentation and measurements The main objective of ANIMMA conference is to unite the various scientific communities not only involved in nuclear instrumentation and measurements, but also in nuclear medicine and radiation. The conference is all about getting scientists, engineers and the industry to meet, exchange cultures and identify new scientific and technical prospects to help overcome both current and future unresolved issues.

  • 2011 2nd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA)

    The aim of the conference is to bring together scientific, academic and industrial communities interested in, or actively involved in research and developments related to nuclear instrumentation and measurement methods.

  • 2009 1st International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications (ANIMMA)

    The program is focused onnuclear instrumantation and measurement methods and deals with all measurement stage : modeling,radiation detection, in plie measurements, electronics, signal acquisition and analysis and training/education activities


More Conferences

Periodicals related to Neutron radiation effects

Back to Top

Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer Architecture Letters

Rigorously peer-reviewed forum for publishing early, high-impact results in the areas of uni- and multiprocessors computer systems, computer architecture workload characterization, performance evaluation and simulation techniques, and power-aware computing


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


More Periodicals

Most published Xplore authors for Neutron radiation effects

Back to Top

Xplore Articles related to Neutron radiation effects

Back to Top

Fast neutron radiation effects in silicon detectors fabricated by different thermal oxidation processes

Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage of MOS capacitors and current-voltage and back-to-back diodes (p+-n--p + if n- is not inverted to p) ...


Neutron Sensitivity of High-Speed Networks

Heather Quinn; Paul Graham; Andrea Manuzzato; Tom Fairbanks; Nicholas Dallmann; Rose DesGeorges IEEE Transactions on Nuclear Science, 2010

Recently, engineers have been studying on-payload networks for fast communication paths. Using intrasystem networks as a means to connect devices together allows for a flexible payload design that does not rely on dedicated communication paths between devices. In this manner, the data flow architecture of the system can be dynamically reconfigured to allow data routes to be optimized for the ...


Neutron radiation effects in GaAs junction field effect transistors

B. K. Janousek; W. E. Yamada; W. L. Bloss IEEE Transactions on Nuclear Science, 1988

The effect of high-energy neutrons on GaAs junction field-effect transistors (JFETs) was investigated. The device threshold voltage, transconductance, and saturation current were measured before irradiation and following neutron irradiations with fluences from 6×1013 n/cm2 to 2×1015 n/cm 2. At 6×1013 n/cm2 the device degradation was negligible while at 2×1015 n/cm2 the threshold voltage shift was 0.410 V, and the transconductance ...


Numerical simulation of neutron radiation effects in avalanche photodiodes

M. D. Osborne; P. R. Hobson; S. J. Watts IEEE Transactions on Electron Devices, 2000

A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


More Xplore Articles

Educational Resources on Neutron radiation effects

Back to Top

eLearning

Fast neutron radiation effects in silicon detectors fabricated by different thermal oxidation processes

Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage of MOS capacitors and current-voltage and back-to-back diodes (p+-n--p + if n- is not inverted to p) ...


Neutron Sensitivity of High-Speed Networks

Heather Quinn; Paul Graham; Andrea Manuzzato; Tom Fairbanks; Nicholas Dallmann; Rose DesGeorges IEEE Transactions on Nuclear Science, 2010

Recently, engineers have been studying on-payload networks for fast communication paths. Using intrasystem networks as a means to connect devices together allows for a flexible payload design that does not rely on dedicated communication paths between devices. In this manner, the data flow architecture of the system can be dynamically reconfigured to allow data routes to be optimized for the ...


Neutron radiation effects in GaAs junction field effect transistors

B. K. Janousek; W. E. Yamada; W. L. Bloss IEEE Transactions on Nuclear Science, 1988

The effect of high-energy neutrons on GaAs junction field-effect transistors (JFETs) was investigated. The device threshold voltage, transconductance, and saturation current were measured before irradiation and following neutron irradiations with fluences from 6×1013 n/cm2 to 2×1015 n/cm 2. At 6×1013 n/cm2 the device degradation was negligible while at 2×1015 n/cm2 the threshold voltage shift was 0.410 V, and the transconductance ...


Numerical simulation of neutron radiation effects in avalanche photodiodes

M. D. Osborne; P. R. Hobson; S. J. Watts IEEE Transactions on Electron Devices, 2000

A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


More eLearning Resources

IEEE-USA E-Books

  • Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs

    Neutron-induced displacement damage effects in n-channel, depletion-mode junction-fleld-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300°C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 ± 1 cm-3 per n/cm2 is obtained for the deep- level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm-1 at RT to 4.75 cm-1 at 300°C. The relative neutron effect on carrier mobility varies with temperature approximately as T-7/2, dropping by an order of magnitude at 300°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.

  • Stochastic Wave Theories

    This chapter presents a summary of the historical development of the statistical wave theories and new ideas, and key questions that may be outstanding or may need further attention. It also discusses the reciprocity relations for the radiative transfer. Radiative transfer has been applied extensively to geophysical remote sensing and scattering. Basic formulations of radiative transfer are closely related to neutron transport and Boltzmann's transport equation. It has been used in biomedical tissue optics, imaging, and ultrasound imaging of tissues. The Sommerfeld problem deals with radio waves over a flat earth. However, if people consider imaging of objects near the ocean surface or terrain, it may be necessary to study the effects of roughness of the surface. This is a study of "stochastic Green's function" for rough surfaces. This problem has been studied using Dyson and Bethe‐Salpeter equations for coherent and incoherent fields using the smoothed diagram method similar to Watson‐Keller studies.

  • Fundamentals of Radiation Effects

    Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.



Standards related to Neutron radiation effects

Back to Top

No standards are currently tagged "Neutron radiation effects"


Jobs related to Neutron radiation effects

Back to Top