Neutron radiation effects
76 resources related to Neutron radiation effects
IEEE Organizations related to Neutron radiation effects
Back to TopConferences related to Neutron radiation effects
Back to Top2012 13th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.
2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)
This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.
Periodicals related to Neutron radiation effects
Back to TopNuclear Science, IEEE Transactions on
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Xplore Articles related to Neutron radiation effects
Back to TopThe influence of neutron radiation effects on the design of highvoltage power transistors
W. L. George; L. E. Clark IEEE Transactions on Electron Devices, 1970
This paper describes the physical phenomena which must be considered in designing a practical neutronhardened npvn power transistor. It is shown that, in addition to resistivity increase in the collector and lifetime decrease in the base region, one must also consider increases in emitterbase spacecharge recombination and decreases in emitter efficiency to completely characterize the device degradation. The most practical ...
A PhysicsBased Device Model of Transient Neutron Damage in Bipolar Junction Transistors
Eric R. Keiter; Thomas V. Russo; Charles E. Hembree; Kenneth E. Kambour IEEE Transactions on Nuclear Science, 2010
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physicsbased approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the GummelPoon BJT model. The model is presented ...
2003 IEEE Radiation Effects Data Workshop
2003 IEEE Radiation Effects Data Workshop, 2003
The following topics are dealt with: groundbased, and inflight single event effects on piecepart commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.
Neutron Radiation Effects in Gold and Aluminum GaAs Schottky Diodes
J. M. Borrego; R. J. Gutmann; S. Ashok IEEE Transactions on Nuclear Science, 1976
The electrical characteristics of guarded Au and Aln GaAs Schottky diodes with free carrier concentration in the range of 3 x 1015 to 8 x 1016 cm 3 have been determined after neutron irradiation. Low neutron fluences producing carrier removal rates less than 20% cause a slight change in the CV and the forward IV characteristics but increase significantly the ...
Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992
High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitancevoltage of MOS capacitors and currentvoltage and backtoback diodes (p+np + if n is not inverted to p) ...
More Xplore Articles
Educational Resources on Neutron radiation effects
Back to TopeLearning
The influence of neutron radiation effects on the design of highvoltage power transistors
W. L. George; L. E. Clark IEEE Transactions on Electron Devices, 1970
This paper describes the physical phenomena which must be considered in designing a practical neutronhardened npvn power transistor. It is shown that, in addition to resistivity increase in the collector and lifetime decrease in the base region, one must also consider increases in emitterbase spacecharge recombination and decreases in emitter efficiency to completely characterize the device degradation. The most practical ...
A PhysicsBased Device Model of Transient Neutron Damage in Bipolar Junction Transistors
Eric R. Keiter; Thomas V. Russo; Charles E. Hembree; Kenneth E. Kambour IEEE Transactions on Nuclear Science, 2010
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physicsbased approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the GummelPoon BJT model. The model is presented ...
2003 IEEE Radiation Effects Data Workshop
2003 IEEE Radiation Effects Data Workshop, 2003
The following topics are dealt with: groundbased, and inflight single event effects on piecepart commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.
Neutron Radiation Effects in Gold and Aluminum GaAs Schottky Diodes
J. M. Borrego; R. J. Gutmann; S. Ashok IEEE Transactions on Nuclear Science, 1976
The electrical characteristics of guarded Au and Aln GaAs Schottky diodes with free carrier concentration in the range of 3 x 1015 to 8 x 1016 cm 3 have been determined after neutron irradiation. Low neutron fluences producing carrier removal rates less than 20% cause a slight change in the CV and the forward IV characteristics but increase significantly the ...
Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992
High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitancevoltage of MOS capacitors and currentvoltage and backtoback diodes (p+np + if n is not inverted to p) ...
More eLearning Resources
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IEEEUSA EBooks

Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs
Neutroninduced displacement damage effects in nchannel, depletionmode junctionfleldeffect transistors (JFETs) fabricated on 6Hsilicon carbide are reported as a function of temperature from room temperature (RT) to 300Â°C. The data are analyzed in terms of a refined model that folds in recently reported information on the twolevel ionization energy structure of the nitrogen donors. A value of 5 Â± 1 cm3 per n/cm2 is obtained for the deep level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm1 at RT to 4.75 cm1 at 300Â°C. The relative neutron effect on carrier mobility varies with temperature approximately as T7/2, dropping by an order of magnitude at 300Â°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine hightemperature and severe radiation environments, where the use of Si and GaAs technologies is limited.

Fundamentals of Radiation Effects
Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.
Standards related to Neutron radiation effects
Back to TopNo standards are currently tagged "Neutron radiation effects"