Neutron radiation effects
76 resources related to Neutron radiation effects
IEEE Organizations related to Neutron radiation effects
Back to TopConferences related to Neutron radiation effects
Back to Top2012 13th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.
2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)
This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.
Periodicals related to Neutron radiation effects
Back to TopNuclear Science, IEEE Transactions on
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Xplore Articles related to Neutron radiation effects
Back to TopGaAs MMIC Technology Radiation Effects
W. T. Anderson; M. Simons; A. Christou; J. Beall IEEE Transactions on Nuclear Science, 1985
A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.
Memory Access Time and Input Size Effects on Parallel Processors Reliability
Laercio L. Pilla; Daniel A. G. Oliveira; Caio Lunardi; Philippe O. A. Navaux; Luigi Carro; Paolo Rech IEEE Transactions on Nuclear Science, 2015
In this paper, we evaluate the effects of reducing the average memory access time (AMAT) on graphics processing units' (GPU) performance and reliability based on data obtained at Los Alamos Neutron Science Center (LANSCE). We also measure the effects of input size changes on the neutron radiation sensitivity of the GPU running different applications. Results show an increase in the ...
SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors
Yanqing Deng; T. A. Fjeldly; T. Ytterdal; M. S. Shur IEEE Transactions on Nuclear Science, 2003
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physicsbased formalism is used for describing the radiation effects within the framework of the GummelPoon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...
Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992
High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitancevoltage of MOS capacitors and currentvoltage and backtoback diodes (p+np + if n is not inverted to p) ...
2003 IEEE Radiation Effects Data Workshop
2003 IEEE Radiation Effects Data Workshop, 2003
The following topics are dealt with: groundbased, and inflight single event effects on piecepart commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.
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Educational Resources on Neutron radiation effects
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GaAs MMIC Technology Radiation Effects
W. T. Anderson; M. Simons; A. Christou; J. Beall IEEE Transactions on Nuclear Science, 1985
A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.
Memory Access Time and Input Size Effects on Parallel Processors Reliability
Laercio L. Pilla; Daniel A. G. Oliveira; Caio Lunardi; Philippe O. A. Navaux; Luigi Carro; Paolo Rech IEEE Transactions on Nuclear Science, 2015
In this paper, we evaluate the effects of reducing the average memory access time (AMAT) on graphics processing units' (GPU) performance and reliability based on data obtained at Los Alamos Neutron Science Center (LANSCE). We also measure the effects of input size changes on the neutron radiation sensitivity of the GPU running different applications. Results show an increase in the ...
SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors
Yanqing Deng; T. A. Fjeldly; T. Ytterdal; M. S. Shur IEEE Transactions on Nuclear Science, 2003
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physicsbased formalism is used for describing the radiation effects within the framework of the GummelPoon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...
Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992
High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitancevoltage of MOS capacitors and currentvoltage and backtoback diodes (p+np + if n is not inverted to p) ...
2003 IEEE Radiation Effects Data Workshop
2003 IEEE Radiation Effects Data Workshop, 2003
The following topics are dealt with: groundbased, and inflight single event effects on piecepart commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.
More eLearning Resources
IEEEUSA EBooks

Fundamentals of Radiation Effects
Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.

Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs
Neutroninduced displacement damage effects in nchannel, depletionmode junctionfleldeffect transistors (JFETs) fabricated on 6Hsilicon carbide are reported as a function of temperature from room temperature (RT) to 300Â°C. The data are analyzed in terms of a refined model that folds in recently reported information on the twolevel ionization energy structure of the nitrogen donors. A value of 5 Â± 1 cm3 per n/cm2 is obtained for the deep level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm1 at RT to 4.75 cm1 at 300Â°C. The relative neutron effect on carrier mobility varies with temperature approximately as T7/2, dropping by an order of magnitude at 300Â°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine hightemperature and severe radiation environments, where the use of Si and GaAs technologies is limited.
Standards related to Neutron radiation effects
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