Neutron radiation effects
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The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.
2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)
This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993
The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space
Neamen, D.A.; Grannemann, W.W.; Yu, H.Y. Electron Devices Meeting, 1970 International, 1970
Schottky-barrier diodes of chromium on n-type epitaxial gallium arsenide phosphide (GaAsP) were studied from 25° to 440°C. The diodes showed significant rectification properties up to a temperature of 440°C. At high temperature the reverse leakage current was 1.15 milliamperes at 25 volts with a diode area of 1.14 × 10-3cm2as compared with 0.25 microampere at room temperature.
Naik, S.S.; Oldham, W.G. Nuclear Science, IEEE Transactions on, 1971
A theory is formulated for the static properties of silicon junction field- effect transistors which are compensated with defects with deep energy levels. A single effective level of an acceptortype 0.40 eV below the conduction band accounts satisfactorily for the degradation of heavily doped n-channel devices with neutron irradiation. Furthermore, based on the existence of defect levels, a frequency dependence ...
Quinn, H.; Graham, P.; Manuzzato, A.; Fairbanks, T.; Dallmann, N.; DesGeorges, R. Nuclear Science, IEEE Transactions on, 2010
Recently, engineers have been studying on-payload networks for fast communication paths. Using intrasystem networks as a means to connect devices together allows for a flexible payload design that does not rely on dedicated communication paths between devices. In this manner, the data flow architecture of the system can be dynamically reconfigured to allow data routes to be optimized for the ...
Deng, Y.; Fjeldly, T.A.; Ytterdal, T.; Shur, M.S. Nuclear Science, IEEE Transactions on, 2003
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...
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