Conferences related to Neutron radiation effects

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2012 13th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.

  • 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components. It also features a very informative Short Course on radiation effects.

  • 2010 11th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as on devices and systems.

  • 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as systems.

  • 2008 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    This workshop will provide information on recent results and developments related to the radiation effects on materials, components and Systems

  • 2007 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)

    Since 1989, the goal of the European RADECS Conferences and Workshops has been to serve the various international industrial and research communities interested in radiation effects in electronics and optoelectronics. A one-day short Course will take place just before the Conference. This year, the theme is "Radiation Effects, from Materials to Systems: a Multi-Scale Approach"

  • 2005 8th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2005)


2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)

This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.



Periodicals related to Neutron radiation effects

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Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.



Most published Xplore authors for Neutron radiation effects

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Xplore Articles related to Neutron radiation effects

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Neutron Sensitivity of High-Speed Networks

Heather Quinn; Paul Graham; Andrea Manuzzato; Tom Fairbanks; Nicholas Dallmann; Rose DesGeorges IEEE Transactions on Nuclear Science, 2010

Recently, engineers have been studying on-payload networks for fast communication paths. Using intrasystem networks as a means to connect devices together allows for a flexible payload design that does not rely on dedicated communication paths between devices. In this manner, the data flow architecture of the system can be dynamically reconfigured to allow data routes to be optimized for the ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


Memory Access Time and Input Size Effects on Parallel Processors Reliability

Laercio L. Pilla; Daniel A. G. Oliveira; Caio Lunardi; Philippe O. A. Navaux; Luigi Carro; Paolo Rech IEEE Transactions on Nuclear Science, 2015

In this paper, we evaluate the effects of reducing the average memory access time (AMAT) on graphics processing units' (GPU) performance and reliability based on data obtained at Los Alamos Neutron Science Center (LANSCE). We also measure the effects of input size changes on the neutron radiation sensitivity of the GPU running different applications. Results show an increase in the ...


The influence of neutron radiation effects on the design of high-voltage power transistors

W. L. George; L. E. Clark IEEE Transactions on Electron Devices, 1970

This paper describes the physical phenomena which must be considered in designing a practical neutron-hardened n-p-v-n power transistor. It is shown that, in addition to resistivity increase in the collector and lifetime decrease in the base region, one must also consider increases in emitter-base space-charge recombination and decreases in emitter efficiency to completely characterize the device degradation. The most practical ...


Neutron Radiation Effects in Junction Field-Effect Transistors

S. S. Naik; W. G. Oldham IEEE Transactions on Nuclear Science, 1971

A theory is formulated for the static properties of silicon junction field- effect transistors which are compensated with defects with deep energy levels. A single effective level of an acceptortype 0.40 eV below the conduction band accounts satisfactorily for the degradation of heavily doped n-channel devices with neutron irradiation. Furthermore, based on the existence of defect levels, a frequency dependence ...


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Educational Resources on Neutron radiation effects

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eLearning

Neutron Sensitivity of High-Speed Networks

Heather Quinn; Paul Graham; Andrea Manuzzato; Tom Fairbanks; Nicholas Dallmann; Rose DesGeorges IEEE Transactions on Nuclear Science, 2010

Recently, engineers have been studying on-payload networks for fast communication paths. Using intrasystem networks as a means to connect devices together allows for a flexible payload design that does not rely on dedicated communication paths between devices. In this manner, the data flow architecture of the system can be dynamically reconfigured to allow data routes to be optimized for the ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


Memory Access Time and Input Size Effects on Parallel Processors Reliability

Laercio L. Pilla; Daniel A. G. Oliveira; Caio Lunardi; Philippe O. A. Navaux; Luigi Carro; Paolo Rech IEEE Transactions on Nuclear Science, 2015

In this paper, we evaluate the effects of reducing the average memory access time (AMAT) on graphics processing units' (GPU) performance and reliability based on data obtained at Los Alamos Neutron Science Center (LANSCE). We also measure the effects of input size changes on the neutron radiation sensitivity of the GPU running different applications. Results show an increase in the ...


The influence of neutron radiation effects on the design of high-voltage power transistors

W. L. George; L. E. Clark IEEE Transactions on Electron Devices, 1970

This paper describes the physical phenomena which must be considered in designing a practical neutron-hardened n-p-v-n power transistor. It is shown that, in addition to resistivity increase in the collector and lifetime decrease in the base region, one must also consider increases in emitter-base space-charge recombination and decreases in emitter efficiency to completely characterize the device degradation. The most practical ...


Neutron Radiation Effects in Junction Field-Effect Transistors

S. S. Naik; W. G. Oldham IEEE Transactions on Nuclear Science, 1971

A theory is formulated for the static properties of silicon junction field- effect transistors which are compensated with defects with deep energy levels. A single effective level of an acceptortype 0.40 eV below the conduction band accounts satisfactorily for the degradation of heavily doped n-channel devices with neutron irradiation. Furthermore, based on the existence of defect levels, a frequency dependence ...


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IEEE-USA E-Books

  • Fundamentals of Radiation Effects

    Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.

  • Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs

    Neutron-induced displacement damage effects in n-channel, depletion-mode junction-fleld-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300°C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 ± 1 cm-3 per n/cm2 is obtained for the deep- level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm-1 at RT to 4.75 cm-1 at 300°C. The relative neutron effect on carrier mobility varies with temperature approximately as T-7/2, dropping by an order of magnitude at 300°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.



Standards related to Neutron radiation effects

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Jobs related to Neutron radiation effects

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