Conferences related to Neutron radiation effects

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2012 13th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.

  • 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components. It also features a very informative Short Course on radiation effects.

  • 2010 11th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as on devices and systems.

  • 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as systems.

  • 2008 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    This workshop will provide information on recent results and developments related to the radiation effects on materials, components and Systems

  • 2007 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)

    Since 1989, the goal of the European RADECS Conferences and Workshops has been to serve the various international industrial and research communities interested in radiation effects in electronics and optoelectronics. A one-day short Course will take place just before the Conference. This year, the theme is "Radiation Effects, from Materials to Systems: a Multi-Scale Approach"

  • 2005 8th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2005)


2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)

This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.



Periodicals related to Neutron radiation effects

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Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.



Most published Xplore authors for Neutron radiation effects

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Xplore Articles related to Neutron radiation effects

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GaAs MMIC Technology Radiation Effects

W. T. Anderson; M. Simons; A. Christou; J. Beall IEEE Transactions on Nuclear Science, 1985

A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.


Memory Access Time and Input Size Effects on Parallel Processors Reliability

Laercio L. Pilla; Daniel A. G. Oliveira; Caio Lunardi; Philippe O. A. Navaux; Luigi Carro; Paolo Rech IEEE Transactions on Nuclear Science, 2015

In this paper, we evaluate the effects of reducing the average memory access time (AMAT) on graphics processing units' (GPU) performance and reliability based on data obtained at Los Alamos Neutron Science Center (LANSCE). We also measure the effects of input size changes on the neutron radiation sensitivity of the GPU running different applications. Results show an increase in the ...


SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors

Yanqing Deng; T. A. Fjeldly; T. Ytterdal; M. S. Shur IEEE Transactions on Nuclear Science, 2003

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...


Fast neutron radiation effects in silicon detectors fabricated by different thermal oxidation processes

Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage of MOS capacitors and current-voltage and back-to-back diodes (p+-n--p + if n- is not inverted to p) ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


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Educational Resources on Neutron radiation effects

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eLearning

GaAs MMIC Technology Radiation Effects

W. T. Anderson; M. Simons; A. Christou; J. Beall IEEE Transactions on Nuclear Science, 1985

A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.


Memory Access Time and Input Size Effects on Parallel Processors Reliability

Laercio L. Pilla; Daniel A. G. Oliveira; Caio Lunardi; Philippe O. A. Navaux; Luigi Carro; Paolo Rech IEEE Transactions on Nuclear Science, 2015

In this paper, we evaluate the effects of reducing the average memory access time (AMAT) on graphics processing units' (GPU) performance and reliability based on data obtained at Los Alamos Neutron Science Center (LANSCE). We also measure the effects of input size changes on the neutron radiation sensitivity of the GPU running different applications. Results show an increase in the ...


SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors

Yanqing Deng; T. A. Fjeldly; T. Ytterdal; M. S. Shur IEEE Transactions on Nuclear Science, 2003

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...


Fast neutron radiation effects in silicon detectors fabricated by different thermal oxidation processes

Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage of MOS capacitors and current-voltage and back-to-back diodes (p+-n--p + if n- is not inverted to p) ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


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IEEE.tv Videos

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IEEE-USA E-Books

  • Fundamentals of Radiation Effects

    Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.

  • Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs

    Neutron-induced displacement damage effects in n-channel, depletion-mode junction-fleld-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300°C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 ± 1 cm-3 per n/cm2 is obtained for the deep- level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm-1 at RT to 4.75 cm-1 at 300°C. The relative neutron effect on carrier mobility varies with temperature approximately as T-7/2, dropping by an order of magnitude at 300°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.



Standards related to Neutron radiation effects

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Jobs related to Neutron radiation effects

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