Neutron radiation effects
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The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.
2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)
This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993
The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space
Keiter, E.R.; Russo, T.V.; Hembree, C.E.; Kambour, K.E. Nuclear Science, IEEE Transactions on, 2010
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physics-based approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the Gummel-Poon BJT model. The model is presented ...
Grannemann, W.W.; Yu, H.Y. Electron Devices Meeting, 1970 International, 1970
Schottky-barrier diodes of chromium on n-type epitaxial gallium arsenide phosphide (GaAsP) were studied from 25° to 440°C. The diodes showed significant rectification properties up to a temperature of 440°C. At high temperature the reverse leakage current was 1.15 milliamperes at 25 volts with a diode area of 1.14 × 10-3cm2as compared with 0.25 microampere at room temperature.
Papastamatiou, M.; Arpatzanis, N.; Papaioannou, G.J.; Papastergiou, C.; Christou, A. Electron Devices, IEEE Transactions on, 1997
The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT's). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of ...
Borrego, J.M.; Gutmann, R.J.; Ashok, S. Nuclear Science, IEEE Transactions on, 1976
The electrical characteristics of guarded Au- and Al-n GaAs Schottky diodes with free carrier concentration in the range of 3 x 1015 to 8 x 1016 cm -3 have been determined after neutron irradiation. Low neutron fluences producing carrier removal rates less than 20% cause a slight change in the C-V and the forward I-V characteristics but increase significantly the ...
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