Conferences related to Neutron radiation effects

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2019 IEEE 28th Symposium on Fusion Engineering (SOFE)

fusion engineering, physics and materials, plasma heating, vacuum technology, tritium processing, fueling, first walls, blankets and divertors


2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


2018 IEEE Aerospace Conference

The international IEEE Aerospace Conference is organized to promote interdisciplinaryunderstanding of aerospace systems, their underlying science, and technology


2018 IEEE International Conference on Plasma Science (ICOPS)

Plasma Science


2018 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


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Periodicals related to Neutron radiation effects

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computer Architecture Letters

Rigorously peer-reviewed forum for publishing early, high-impact results in the areas of uni- and multiprocessors computer systems, computer architecture workload characterization, performance evaluation and simulation techniques, and power-aware computing


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electromagnetic Compatibility, IEEE Transactions on

EMC standards; measurement technology; undesired sources; cable/grounding; filters/shielding; equipment EMC; systems EMC; antennas and propagation; spectrum utilization; electromagnetic pulses; lightning; radiation hazards; and Walsh functions


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Most published Xplore authors for Neutron radiation effects

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Xplore Articles related to Neutron radiation effects

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The influence of neutron radiation effects on the design of high-voltage power transistors

[{u'author_order': 1, u'affiliation': u'Central Research Laboratories, Phoenix, Ariz.', u'full_name': u'W. L. George'}, {u'author_order': 2, u'full_name': u'L. E. Clark'}] IEEE Transactions on Electron Devices, 1970

This paper describes the physical phenomena which must be considered in designing a practical neutron-hardened n-p-v-n power transistor. It is shown that, in addition to resistivity increase in the collector and lifetime decrease in the base region, one must also consider increases in emitter-base space-charge recombination and decreases in emitter efficiency to completely characterize the device degradation. The most practical ...


Analysis of SEE-Inducing Charge Generation in the Neutron Beam at The Svedberg Laboratory

[{u'author_order': 1, u'affiliation': u'Univ. of Central Lancashire, Preston', u'full_name': u'S. P. Platt'}, {u'author_order': 2, u'affiliation': u'Univ. of Central Lancashire, Preston', u'full_name': u'Z. Torok'}] IEEE Transactions on Nuclear Science, 2007

We characterize the single-event effect (SEE) inducing charge-generation properties of the neutron beam at the Svedberg laboratory (TSL), and compare these to results obtained at Los Alamos neutron science center (LANSCE). We observe that the charge collection spectra obtained in these dissimilar fields differ insignificantly over the range covering the vast majority of detected events. This permits us to make ...


Gamma-ray and fast neutron radiation effects on thin film superconductors

[{u'author_order': 1, u'affiliation': u'High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA', u'full_name': u'J. A. Cooksey'}, {u'author_order': 2, u'affiliation': u'High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA', u'full_name': u'W. D. Brown'}, {u'author_order': 3, u'affiliation': u'High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA', u'full_name': u'S. S. Ang'}, {u'author_order': 4, u'affiliation': u'High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA', u'full_name': u'H. A. Naseem'}, {u'author_order': 5, u'affiliation': u'High Density Electron. Center, Arkansas Univ., Fayetteville, AR, USA', u'full_name': u'R. K. Ulrich'}, {u'author_order': 6, u'full_name': u'L. West'}] IEEE Transactions on Nuclear Science, 1994

The gamma-ray and neutron radiation hardness of YBa/sub 2/Cu/sub 3/O/sub 7-x/, Tl/sub 2/Ba/sub 2/CaCu/sub 2/O/sub 8+x/ and Tl/sub 2/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10+x/ superconducting thin films deposited by off-axis sputtering and laser-ablation deposition techniques on substrates of MgO and LaAlO/sub 3/ was investigated. The unbiased samples were irradiated with 662 keV gamma-rays up to a cumulative dose of 1.5 Mrad(Si) ...


Neutron Radiation Effects in Junction Field-Effect Transistors

[{u'author_order': 1, u'affiliation': u'Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California, Berkeley, California 94720', u'full_name': u'S. S. Naik'}, {u'author_order': 2, u'affiliation': u'Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California, Berkeley, California 94720', u'full_name': u'W. G. Oldham'}] IEEE Transactions on Nuclear Science, 1971

A theory is formulated for the static properties of silicon junction field- effect transistors which are compensated with defects with deep energy levels. A single effective level of an acceptortype 0.40 eV below the conduction band accounts satisfactorily for the degradation of heavily doped n-channel devices with neutron irradiation. Furthermore, based on the existence of defect levels, a frequency dependence ...


Neutron Radiation Effects on MOS Fets: Theory and Experiment

[{u'author_order': 1, u'affiliation': u'General Precision Systems Inc. Aerospace Research Center Little Falls, N. J.', u'full_name': u'A. A. Witteles'}] IEEE Transactions on Nuclear Science, 1968

The effects of a pure neutron environment on Metal-Oxide-Semiconductor Field Effect Transistors (MOS-FET) is studied. A model for neutron-produced ionization in the oxide layer is presented. The energy partition between atomic displacement and electronic ionization processes in the nuclear scattering interaction is calculated and compared to the Lindhard model. It is shown that the neutron ionization causes a positive charge ...


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Educational Resources on Neutron radiation effects

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eLearning

No eLearning Articles are currently tagged "Neutron radiation effects"

IEEE-USA E-Books

  • Fundamentals of Radiation Effects

    Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.

  • Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs

    Neutron-induced displacement damage effects in n-channel, depletion-mode junction-fleld-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300¿¿C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 ¿¿ 1 cm-3 per n/cm2 is obtained for the deep- level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm-1 at RT to 4.75 cm-1 at 300¿¿C. The relative neutron effect on carrier mobility varies with temperature approximately as T-7/2, dropping by an order of magnitude at 300¿¿C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.

  • Stochastic Wave Theories

    This chapter presents a summary of the historical development of the statistical wave theories and new ideas, and key questions that may be outstanding or may need further attention. It also discusses the reciprocity relations for the radiative transfer. Radiative transfer has been applied extensively to geophysical remote sensing and scattering. Basic formulations of radiative transfer are closely related to neutron transport and Boltzmann's transport equation. It has been used in biomedical tissue optics, imaging, and ultrasound imaging of tissues. The Sommerfeld problem deals with radio waves over a flat earth. However, if people consider imaging of objects near the ocean surface or terrain, it may be necessary to study the effects of roughness of the surface. This is a study of "stochastic Green's function" for rough surfaces. This problem has been studied using Dyson and Bethe‐Salpeter equations for coherent and incoherent fields using the smoothed diagram method similar to Watson‐Keller studies.



Standards related to Neutron radiation effects

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