Conferences related to Neutron radiation effects

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2012 13th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.

  • 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components. It also features a very informative Short Course on radiation effects.

  • 2010 11th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as on devices and systems.

  • 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as systems.

  • 2008 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    This workshop will provide information on recent results and developments related to the radiation effects on materials, components and Systems

  • 2007 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)

    Since 1989, the goal of the European RADECS Conferences and Workshops has been to serve the various international industrial and research communities interested in radiation effects in electronics and optoelectronics. A one-day short Course will take place just before the Conference. This year, the theme is "Radiation Effects, from Materials to Systems: a Multi-Scale Approach"

  • 2005 8th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2005)


2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)

This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.



Periodicals related to Neutron radiation effects

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Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Neutron radiation effects

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SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors

Deng, Y.; Fjeldly, T.A.; Ytterdal, T.; Shur, M.S. Nuclear Science, IEEE Transactions on, 2003

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...


Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]

Papastamatiou, M.; Arpatzanis, N.; Papaioannou, G.J.; Papastergiou, C.; Christou, A. Electron Devices, IEEE Transactions on, 1997

The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT's). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of ...


Neutron radiation effects in GaAs planar doped barrier diodes

Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space


Numerical simulation of neutron radiation effects in avalanche photodiodes

Osborne, M.D.; Hobson, P.R.; Watts, S.J. Electron Devices, IEEE Transactions on, 2000

A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via ...


Neutron radiation effects in GaAs junction field effect transistors

Janousek, B.K.; Yamada, W.E.; Bloss, W.L. Nuclear Science, IEEE Transactions on, 1988

The effect of high-energy neutrons on GaAs junction field-effect transistors (JFETs) was investigated. The device threshold voltage, transconductance, and saturation current were measured before irradiation and following neutron irradiations with fluences from 6×1013 n/cm2 to 2×1015 n/cm 2. At 6×1013 n/cm2 the device degradation was negligible while at 2×1015 n/cm2 the threshold voltage shift was 0.410 V, and the transconductance ...


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Educational Resources on Neutron radiation effects

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eLearning

SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors

Deng, Y.; Fjeldly, T.A.; Ytterdal, T.; Shur, M.S. Nuclear Science, IEEE Transactions on, 2003

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, we have developed a bipolar junction transistor SPICE model that incorporates displacement damage effects. A physics-based formalism is used for describing the radiation effects within the framework of the Gummel-Poon model. A model structure that includes the dependence of neutron fluence on the relevant SPICE ...


Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]

Papastamatiou, M.; Arpatzanis, N.; Papaioannou, G.J.; Papastergiou, C.; Christou, A. Electron Devices, IEEE Transactions on, 1997

The effect of fast neutron radiation has been investigated in High Electron Mobility Transistors (HEMT's). Devices with different layer structures have been employed for the better understanding of failure mechanism sources. The deep traps introduced by neutron irradiation in the AlGaAs donor layer have been, for the first time, studied. The application of charge control model allowed the determination of ...


Neutron radiation effects in GaAs planar doped barrier diodes

Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space


Numerical simulation of neutron radiation effects in avalanche photodiodes

Osborne, M.D.; Hobson, P.R.; Watts, S.J. Electron Devices, IEEE Transactions on, 2000

A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a user specified structure. The model includes impact ionization and illumination allowing accurate simulation with minimal assumptions. The effect of neutron radiation damage is incorporated via ...


Neutron radiation effects in GaAs junction field effect transistors

Janousek, B.K.; Yamada, W.E.; Bloss, W.L. Nuclear Science, IEEE Transactions on, 1988

The effect of high-energy neutrons on GaAs junction field-effect transistors (JFETs) was investigated. The device threshold voltage, transconductance, and saturation current were measured before irradiation and following neutron irradiations with fluences from 6×1013 n/cm2 to 2×1015 n/cm 2. At 6×1013 n/cm2 the device degradation was negligible while at 2×1015 n/cm2 the threshold voltage shift was 0.410 V, and the transconductance ...


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