Conferences related to Neutron radiation effects

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2012 13th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.

  • 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components. It also features a very informative Short Course on radiation effects.

  • 2010 11th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as on devices and systems.

  • 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as systems.

  • 2008 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    This workshop will provide information on recent results and developments related to the radiation effects on materials, components and Systems

  • 2007 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)

    Since 1989, the goal of the European RADECS Conferences and Workshops has been to serve the various international industrial and research communities interested in radiation effects in electronics and optoelectronics. A one-day short Course will take place just before the Conference. This year, the theme is "Radiation Effects, from Materials to Systems: a Multi-Scale Approach"

  • 2005 8th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2005)


2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)

This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.



Periodicals related to Neutron radiation effects

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Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.



Most published Xplore authors for Neutron radiation effects

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Xplore Articles related to Neutron radiation effects

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Fast neutron radiation effects in silicon detectors fabricated by different thermal oxidation processes

Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage of MOS capacitors and current-voltage and back-to-back diodes (p+-n--p + if n- is not inverted to p) ...


Neutron radiation effects in GaAs junction field effect transistors

B. K. Janousek; W. E. Yamada; W. L. Bloss IEEE Transactions on Nuclear Science, 1988

The effect of high-energy neutrons on GaAs junction field-effect transistors (JFETs) was investigated. The device threshold voltage, transconductance, and saturation current were measured before irradiation and following neutron irradiations with fluences from 6×1013 n/cm2 to 2×1015 n/cm 2. At 6×1013 n/cm2 the device degradation was negligible while at 2×1015 n/cm2 the threshold voltage shift was 0.410 V, and the transconductance ...


GaAs MMIC Technology Radiation Effects

W. T. Anderson; M. Simons; A. Christou; J. Beall IEEE Transactions on Nuclear Science, 1985

A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.


Analysis of SEE-Inducing Charge Generation in the Neutron Beam at The Svedberg Laboratory

S. P. Platt; Z. Torok IEEE Transactions on Nuclear Science, 2007

We characterize the single-event effect (SEE) inducing charge-generation properties of the neutron beam at the Svedberg laboratory (TSL), and compare these to results obtained at Los Alamos neutron science center (LANSCE). We observe that the charge collection spectra obtained in these dissimilar fields differ insignificantly over the range covering the vast majority of detected events. This permits us to make ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


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Educational Resources on Neutron radiation effects

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eLearning

Fast neutron radiation effects in silicon detectors fabricated by different thermal oxidation processes

Z. Li; H. W. Kraner IEEE Transactions on Nuclear Science, 1992

High resistivity silicon detectors along with MOS capacitors made on five silicon dioxides with different thermal conditions (975°C to 1200°C) have been exposed to fast neutron irradiation up to the fluence of a few times 1014 n/cm2. New measurement techniques such as capacitance-voltage of MOS capacitors and current-voltage and back-to-back diodes (p+-n--p + if n- is not inverted to p) ...


Neutron radiation effects in GaAs junction field effect transistors

B. K. Janousek; W. E. Yamada; W. L. Bloss IEEE Transactions on Nuclear Science, 1988

The effect of high-energy neutrons on GaAs junction field-effect transistors (JFETs) was investigated. The device threshold voltage, transconductance, and saturation current were measured before irradiation and following neutron irradiations with fluences from 6×1013 n/cm2 to 2×1015 n/cm 2. At 6×1013 n/cm2 the device degradation was negligible while at 2×1015 n/cm2 the threshold voltage shift was 0.410 V, and the transconductance ...


GaAs MMIC Technology Radiation Effects

W. T. Anderson; M. Simons; A. Christou; J. Beall IEEE Transactions on Nuclear Science, 1985

A comprehensive study was made of radiation effects in the component devices that comprise a particular technology developed by Texas Instruments for GaAs MMICs. Total dose, transient, and neutron radiation effects were measured in FETs. Transient effects were measured in capacitors, resistors, Schottky barrier diodes and the MWICs. Results are compared with predictions of radiation effects models.


Analysis of SEE-Inducing Charge Generation in the Neutron Beam at The Svedberg Laboratory

S. P. Platt; Z. Torok IEEE Transactions on Nuclear Science, 2007

We characterize the single-event effect (SEE) inducing charge-generation properties of the neutron beam at the Svedberg laboratory (TSL), and compare these to results obtained at Los Alamos neutron science center (LANSCE). We observe that the charge collection spectra obtained in these dissimilar fields differ insignificantly over the range covering the vast majority of detected events. This permits us to make ...


2003 IEEE Radiation Effects Data Workshop

2003 IEEE Radiation Effects Data Workshop, 2003

The following topics are dealt with: ground-based, and in-flight single event effects on piece-part commercial off the shelf as well as space qualified components; total ionizing dose, including ELDRS and displacement damage; and proton and neutron test facilities in the United States, Canada, and Russia.


More eLearning Resources

IEEE-USA E-Books

  • Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs

    Neutron-induced displacement damage effects in n-channel, depletion-mode junction-fleld-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300°C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 ± 1 cm-3 per n/cm2 is obtained for the deep- level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm-1 at RT to 4.75 cm-1 at 300°C. The relative neutron effect on carrier mobility varies with temperature approximately as T-7/2, dropping by an order of magnitude at 300°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.

  • Fundamentals of Radiation Effects

    Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.



Standards related to Neutron radiation effects

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Jobs related to Neutron radiation effects

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