Conferences related to Neutron radiation effects

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2012 13th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.

  • 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components. It also features a very informative Short Course on radiation effects.

  • 2010 11th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as on devices and systems.

  • 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    The conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonics components as well as systems.

  • 2008 European Conference on Radiation and Its Effects on Components and Systems (RADECS)

    This workshop will provide information on recent results and developments related to the radiation effects on materials, components and Systems

  • 2007 9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)

    Since 1989, the goal of the European RADECS Conferences and Workshops has been to serve the various international industrial and research communities interested in radiation effects in electronics and optoelectronics. A one-day short Course will take place just before the Conference. This year, the theme is "Radiation Effects, from Materials to Systems: a Multi-Scale Approach"

  • 2005 8th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2005)


2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)

This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.



Periodicals related to Neutron radiation effects

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Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Neutron radiation effects

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Neutron radiation effects in GaAs planar doped barrier diodes

M. J. Kearney; N. R. Couch; M. Edwards; I. Dale IEEE Transactions on Nuclear Science, 1993

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space


Neutron Radiation Effects in Gold and Aluminum GaAs Schottky Diodes

J. M. Borrego; R. J. Gutmann; S. Ashok IEEE Transactions on Nuclear Science, 1976

The electrical characteristics of guarded Au- and Al-n GaAs Schottky diodes with free carrier concentration in the range of 3 x 1015 to 8 x 1016 cm -3 have been determined after neutron irradiation. Low neutron fluences producing carrier removal rates less than 20% cause a slight change in the C-V and the forward I-V characteristics but increase significantly the ...


Neutron radiation effects in HEMTs

G. J. Papaioannou; M. Papastamatiou; N. Arpatzanis; P. Dimitrakis; C. Papastergiou Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on, 1993

HEMTs have been irradiated with fast neutrons at fluences up to 10 16n/cm2. At large enough fluences the two dimensional electron gas vanishes and the devices turn into AlGaAs MESFETs. The majority carrier traps responsible for the degradation have been investigated. A charge control model has been introduced to simulate the shift of the threshold voltage and to determine the ...


Study of the luminescence from infrared window materials undergoing pulsed nuclear irradiation

Barnouin; Chung; Miley Plasma Science, 1989. IEEE Conference Record - Abstracts., 1989 IEEE International Conference on, 1989

Summary Form only given, as follows. Pulsed nuclear irradiation of infrared window materials was performed at the TRIGA nuclear reactor. The pulse was 17 ms (FWHM) in duration, and the 0.1 Mrad dose consisted of 5% neutrons and 95% gamma rays. The samples under study included sapphire, CsI, ALON, and spinel. The radioluminescence exhibited by these samples during the irradiation ...


A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors

Eric R. Keiter; Thomas V. Russo; Charles E. Hembree; Kenneth E. Kambour IEEE Transactions on Nuclear Science, 2010

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physics-based approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the Gummel-Poon BJT model. The model is presented ...


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Educational Resources on Neutron radiation effects

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eLearning

Neutron radiation effects in GaAs planar doped barrier diodes

M. J. Kearney; N. R. Couch; M. Edwards; I. Dale IEEE Transactions on Nuclear Science, 1993

The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space


Neutron Radiation Effects in Gold and Aluminum GaAs Schottky Diodes

J. M. Borrego; R. J. Gutmann; S. Ashok IEEE Transactions on Nuclear Science, 1976

The electrical characteristics of guarded Au- and Al-n GaAs Schottky diodes with free carrier concentration in the range of 3 x 1015 to 8 x 1016 cm -3 have been determined after neutron irradiation. Low neutron fluences producing carrier removal rates less than 20% cause a slight change in the C-V and the forward I-V characteristics but increase significantly the ...


Neutron radiation effects in HEMTs

G. J. Papaioannou; M. Papastamatiou; N. Arpatzanis; P. Dimitrakis; C. Papastergiou Radiation and its Effects on Components and Systems, 1993.,RADECS 93., Second European Conference on, 1993

HEMTs have been irradiated with fast neutrons at fluences up to 10 16n/cm2. At large enough fluences the two dimensional electron gas vanishes and the devices turn into AlGaAs MESFETs. The majority carrier traps responsible for the degradation have been investigated. A charge control model has been introduced to simulate the shift of the threshold voltage and to determine the ...


Study of the luminescence from infrared window materials undergoing pulsed nuclear irradiation

Barnouin; Chung; Miley Plasma Science, 1989. IEEE Conference Record - Abstracts., 1989 IEEE International Conference on, 1989

Summary Form only given, as follows. Pulsed nuclear irradiation of infrared window materials was performed at the TRIGA nuclear reactor. The pulse was 17 ms (FWHM) in duration, and the 0.1 Mrad dose consisted of 5% neutrons and 95% gamma rays. The samples under study included sapphire, CsI, ALON, and spinel. The radioluminescence exhibited by these samples during the irradiation ...


A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors

Eric R. Keiter; Thomas V. Russo; Charles E. Hembree; Kenneth E. Kambour IEEE Transactions on Nuclear Science, 2010

For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physics-based approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the Gummel-Poon BJT model. The model is presented ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • Fundamentals of Radiation Effects

    Chapter 3 introduces fundamentals of radiation effects by neutrons and charged particles with their LET (Linear Energy Transfer) and average range in Si.

  • Analysis of Neutron Damage in HighTemperature Silicon Carbide JFETs

    Neutron-induced displacement damage effects in n-channel, depletion-mode junction-fleld-effect transistors (JFETs) fabricated on 6H-silicon carbide are reported as a function of temperature from room temperature (RT) to 300°C. The data are analyzed in terms of a refined model that folds in recently reported information on the two-level ionization energy structure of the nitrogen donors. A value of 5 ± 1 cm-3 per n/cm2 is obtained for the deep- level defect introduction rate induced by the neutron irradiation. Due to partial ionization of the donor atoms at RT, the carrier removal rate is a function of temperature, varying from 3.5 cm-1 at RT to 4.75 cm-1 at 300°C. The relative neutron effect on carrier mobility varies with temperature approximately as T-7/2, dropping by an order of magnitude at 300°C compared with the RT effect. The results offer further support for the use of SiC devices in applications which combine high-temperature and severe radiation environments, where the use of Si and GaAs technologies is limited.



Standards related to Neutron radiation effects

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