Neutron radiation effects
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The RADECS Conference features a technical program dedicated to the latest developments and experimental observations related to radiation effects on electronic and photonic components.
2012 IEEE Radiation Effects Data Workshop (in conjunction with NSREC 2012)
This workshop is part of the NSREC 2012 conference (cr# 15402). The intent of the workshop is to provide data and facilities information to support design and radiation testing activities.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Kearney, M.J.; Couch, N.R.; Edwards, M.; Dale, I. Nuclear Science, IEEE Transactions on, 1993
The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space
Platt, S.P.; Torok, Z. Nuclear Science, IEEE Transactions on, 2007
We characterize the single-event effect (SEE) inducing charge-generation properties of the neutron beam at the Svedberg laboratory (TSL), and compare these to results obtained at Los Alamos neutron science center (LANSCE). We observe that the charge collection spectra obtained in these dissimilar fields differ insignificantly over the range covering the vast majority of detected events. This permits us to make ...
Cooksey, J.A.; Brown, W.D.; Ang, S.S.; Naseem, H.A.; Ulrich, R.K.; West, L. Nuclear Science, IEEE Transactions on, 1994
The gamma-ray and neutron radiation hardness of YBa/sub 2/Cu/sub 3/O/sub 7-x/, Tl/sub 2/Ba/sub 2/CaCu/sub 2/O/sub 8+x/ and Tl/sub 2/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub 10+x/ superconducting thin films deposited by off-axis sputtering and laser-ablation deposition techniques on substrates of MgO and LaAlO/sub 3/ was investigated. The unbiased samples were irradiated with 662 keV gamma-rays up to a cumulative dose of 1.5 Mrad(Si) ...
Naik, S.S.; Oldham, W.G. Nuclear Science, IEEE Transactions on, 1971
A theory is formulated for the static properties of silicon junction field- effect transistors which are compensated with defects with deep energy levels. A single effective level of an acceptortype 0.40 eV below the conduction band accounts satisfactorily for the degradation of heavily doped n-channel devices with neutron irradiation. Furthermore, based on the existence of defect levels, a frequency dependence ...
Keiter, E.R.; Russo, T.V.; Hembree, C.E.; Kambour, K.E. Nuclear Science, IEEE Transactions on, 2010
For the purpose of simulating the effects of neutron radiation damage on bipolar circuit performance, a bipolar junction transistor (BJT) compact model incorporating displacement damage effects and rapid annealing has been developed. A physics-based approach is used to model displacement damage effects, and this modeling approach is implemented as an augmentation to the Gummel-Poon BJT model. The model is presented ...
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