Neodymium

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Neodymium is a chemical element with the symbol Nd and atomic number 60. (Wikipedia.org)






Conferences related to Neodymium

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2020 IEEE International Symposium on Applications of Ferroelectrics (ISAF)

Ferroelectric materials and applications


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2018 52nd Annual Conference on Information Sciences and Systems (CISS)

The scope includes theoretical advances, applications, and ideas in the fields of information sciences and systems including: Information Theory,Coding Theory, Image Processing, Communications, Signal Processing, Machine Learning, Statistical Inference,, Security and Privacy, Energy Systems, Networking, Systems and Control, Biological Systems


2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electrical Insulation Magazine, IEEE

The magazine covers theory, analysis, design (computer-aided design), and practical implementation of circuits, and the application of circuit theoretic techniques to systems and to signal processing. Content is written for the spectrum of activities from basic scientific theory to industrial applications.


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Xplore Articles related to Neodymium

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Liquid-crystal technique for observing integrated-circuit operation

[{u'author_order': 1, u'affiliation': u'RCA Laboratories, Princeton, N. J.', u'full_name': u'D. J. Channin'}] IEEE Transactions on Electron Devices, 1974

A nondestructive technique has been developed that enables both the electric fields and temperature distributions at the surface of an operating integrated circuit to be viewed with conventional optical microscopes. Packaged chips or unscribed wafers are coated with a nematic liquid-crystal layer and operated in their normal fashion. Practical preparation and observation procedures have been developed.


Efficient laser emission in resonantly pumped highly concentrated Nd:YAG ceramics

[{u'author_order': 1, u'affiliation': u'Laser Res. Center, Inst. for Molecular Sci., Okazaki, Japan', u'full_name': u'V. Lupei'}, {u'author_order': 2, u'full_name': u'T. Taira'}, {u'author_order': 3, u'full_name': u'N. Pavel'}, {u'author_order': 4, u'full_name': u'I. Shoji'}, {u'author_order': 5, u'full_name': u'A. Lupei'}, {u'author_order': 6, u'full_name': u'A. Ikesue'}] Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557), None

The possibility of using the hot band resonant pump in the emitting level of highly-doped Nd laser materials for construction of efficient solid state lasers is demonstrated with Nd:YAG ceramics of 3.8-at.% Nd.


Concerning the onset of heavy inversion in MIS devices

[{u'author_order': 1, u'affiliation': u'Hewlett-Packard, Company, Palo Alto, Calif.', u'full_name': u'M. C. Tobey'}, {u'author_order': 2, u'full_name': u'N. Gordon'}] IEEE Transactions on Electron Devices, 1974

The accepted touchstone for the onset of heavy inversion in metal-insulator- semiconductor (MIS) devices is the condition that the minority carrier density at the surface equals the bulk impurity concentration. It is not always clear how to use that definition in practical problems. In this letter we propose a new definition, and we demonstrate that it leads to the same ...


New CMOS logarithmic A/D converters employing pipeline and algorithmic architectures

[{u'author_order': 1, u'affiliation': u'IST Center for Microsystems, Inst. Superior Tecnico, Lisbon, Portugal', u'full_name': u'J. Guilherme'}, {u'author_order': 2, u'affiliation': u'IST Center for Microsystems, Inst. Superior Tecnico, Lisbon, Portugal', u'full_name': u'J. E. Franca'}] Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on, None

New techniques for realizing CMOS logarithmic analog-to-digital (A/D) converters employing pipeline and algorithmic architectures are described. This is achieved by replacing the operations of subtraction/addition and multiplications in their linear counterparts by simple scaling operations in the logarithmic domain. Logarithmic pipeline A/D converters are more appropriate for high-frequency applications whereas logarithmic algorithmic A/D converters are particularly suitable for compact, low-cost ...


Superconducting properties of YNdBaCuO and NdBaCuO thin films deposited by dc sputtering

[{u'author_order': 1, u'affiliation': u'Dept. of Phys., Univ. Federico II, Naples, Italy', u'full_name': u'M. Salluzzo'}, {u'author_order': 2, u'full_name': u'A. Andreone'}, {u'author_order': 3, u'full_name': u'A. Cassinese'}, {u'author_order': 4, u'full_name': u'R. Di Capua'}, {u'author_order': 5, u'full_name': u'M. Iavarone'}, {u'author_order': 6, u'full_name': u'M. G. Maglione'}, {u'author_order': 7, u'full_name': u'G. Pica'}, {u'author_order': 8, u'full_name': u'R. Vaglio'}] IEEE Transactions on Applied Superconductivity, 2001

We report on fabrication of Y1NdxBa2-x Cu3O7-δ and Nd1+xBa2-x Cu3O7-δ thin films deposited by high oxygen pressure dc sputtering. The structural properties are investigated by X-ray diffraction while Scanning Tunneling Microscopy (STM) has been used to determine the surface morphology. The critical temperature and the critical current density are obtained by transport and inductive measurements. The microwave properties have been ...


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IEEE-USA E-Books

  • Dynamic Modeling of Stick Slip Motion in an Untethered Magnetic Micro-Robot

    This work presents the dynamic modeling of an untethered electromagnetically actuated magnetic micro-robot, and compares computer simulations to experimental results. The micro-robot, which is composed of neodymium-iron- boron with dimensions 250 µm x 130 µm x 100 µm, is actuated by a system of 5 macro-scale electromagnets. Periodic magnetic fields are created using two different control methods, which induce stick-slip motion in the micro-robot. The effects of model parameter variations on micro-robot velocity are explored and discussed. Micro-robot stick-slip motion is accurately captured in simulation. Velocity trends of the micro-robot on a silicon surface as a function of magnetic field oscillation frequency and magnetic field strength are also captured. Mismatch between simulation and reality is discussed.

  • Solid-State and Fiber Lasers

    This chapter contains sections titled: * What is a Solid-State Laser? * Solid-State Laser Materials * Optical Pumping * Ruby Lasers * Neodymium Lasers * Vibronic and Tunable Solid-State Lasers * Erbium and Other Eye-Safe Lasers * Rare-Earth-Doped Fiber Lasers * Rare-Earth-Doped Fiber Amplifiers * Raman Fiber Lasers and Amplifiers * What Have We Learned?

  • SolidState Lasers



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