Conferences related to Magnetic tunneling

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INTERMAG 2014 - IEEE International Magnetics Conference

Intermag is the premier conference on applied magnetics which allows scientists and engineers from all over to world to meet and discuss novel developments in magnetics, magnetic materials and associated technologies.


2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, Steep Subthreshold devices and other energy efficiency related devices, Advanced gate stack science and technology, More-than-Moore Device integration and applications, DRAM, SRAM and Emerging NVM, technologies such as RRAM and MRAM, Advanced Interconnect technology, Embedded Memory, Advanced packaging technology, FinFET, SOI and fully depleted devices, Nanoelectronic materials /process/devices, Device and interconnect reliability, 3D Integration technology, Process and device modeling, Yield enhancement, Thin Film and Flexible Electronics, Process control and advanced manufacturing technologies, Organic electronics and photonics, MEMS and Sensors, Analog/RF devices and technologies, Advanced lithography technology and next generation lithography, Advanced process technology.



Periodicals related to Magnetic tunneling

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Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.




Xplore Articles related to Magnetic tunneling

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AC susceptibility of Co clusters in a bias magnetic field: quantum tunneling versus nonlinear effects

Luis, F.; Torres, J.M.; Garcia, L.M.; Petroff, F.; Bartolome, J. Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International, 2002

Summary form only given. The authors investigate the temperature dependence of the AC susceptibility of Co clusters in the presence of a DC magnetic field of varying strength. At zero field, the real /spl chi/' and imaginary /spl chi/" components of the susceptibility show superparamagnetic behavior, with a maximum that shifts towards higher temperatures as the frequency increases. As the ...


Stacked multistage lumped element circulator

Schuchinsky, Alexander Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, 2012

The novel concept and architecture of the vertically stacked multistage circulator with a single source of dc magnetic bias has been proposed. The distinctive features of the new arrangement are discussed and the main aspects of the circulator design, including the dc magnetic bias and concurrent thermal stabilization of multiple junctions, are presented. The experimental prototype of the VHF stacked ...


Effects of temperature, deposition conditions, and magnetic field on Ni<sub>80</sub>Fe<sub>20</sub>/Fe<sub>50</sub>Mn<sub>50</sub>/Ni<sub>80</sub>Fe<sub>20</sub>/Al<sub>2</sub>O<sub>3</sub>/Co and Ni<sub>80</sub>Fe<sub>20</sub>/Al<sub>2</sub>O<sub>3</sub>/Co magnetic tunnel junctions

Chen, F.H.; Ng, V. Magnetics, IEEE Transactions on, 2005

We fabricated magnetic tunnel junctions (MTJs) of Ni80Fe20/Fe50Mn50/Ni80Fe20/Al2O3/Co exchange-biased structures and Ni80Fe20/Al2O3/Co nonexchange-biased structures using shadow masks, with and without an in situ magnetic field. We magnetically annealed the junctions at 230°C for 15 min after deposition. Low-temperature measurements revealed an increase in junction resistance and tunneling magnetoresistance and enhancement of the exchange field for exchange-biased junctions. Post- deposition magnetic ...


Spintronic nano-oscillators: Towards nanoscale and tunable frequency devices

Grimaldi, E.; Lebrun, R.; Jenkins, A.; Dussaux, A.; Grollier, J.; Cros, V.; Fert, A.; Kubota, H.; Yakushiji, K.; Fukushima, A.; Matsumoto, R.; Yuasa, S.; Cibiel, G.; Bortolotti, P.; Pillet, G. Frequency Control Symposium (FCS), 2014 IEEE International, 2014

Spin transfer nano-oscillators are microwave devices based on two major spintronic physical phenomena: spin transfer effect and magnetoresistive effect. These spintronic oscillators are possibly new type of integrated devices for applications such as microwave emission, frequency modulation, frequency mixing and frequency detection. In order to reach telecommunication applications required specifications, several issues must be tackled such as operating conditions without ...


High-Frequency Vortex-Based Spin Transfer Nano-Oscillators

Pui Sze Ku; Qi Shao; Ruotolo, A. Magnetics, IEEE Transactions on, 2014

Spin transfer torque oscillators based on magnetic vortex precession can deliver output powers large enough for practical applications. In addition they do not require discrete electronic components, such as capacitors or inductors, to tune the oscillation frequency. At the current stage, this oscillation frequency is still too low and can be increased only by trading off the output power. Here, ...


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Standards related to Magnetic tunneling

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Jobs related to Magnetic tunneling

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