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INTERMAG 2014 - IEEE International Magnetics Conference
Intermag is the premier conference on applied magnetics which allows scientists and engineers from all over to world to meet and discuss novel developments in magnetics, magnetic materials and associated technologies.
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, Steep Subthreshold devices and other energy efficiency related devices, Advanced gate stack science and technology, More-than-Moore Device integration and applications, DRAM, SRAM and Emerging NVM, technologies such as RRAM and MRAM, Advanced Interconnect technology, Embedded Memory, Advanced packaging technology, FinFET, SOI and fully depleted devices, Nanoelectronic materials /process/devices, Device and interconnect reliability, 3D Integration technology, Process and device modeling, Yield enhancement, Thin Film and Flexible Electronics, Process control and advanced manufacturing technologies, Organic electronics and photonics, MEMS and Sensors, Analog/RF devices and technologies, Advanced lithography technology and next generation lithography, Advanced process technology.
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
Ferreira, R.; Cardoso, S.; Freitas, Paulo P. Magnetics, IEEE Transactions on, 2006
Magnetic tunnel junctions (MTJs) incorporating GeSbTe thermal barriers and weakly pinned free layers (Hex~60Oe) have been produced with areas between 1times1 mum2 and 3times8 mum2. Current pulses lasting from 100 mus down to 20 ns were used to heat the MTJs and reverse the free layer pinning field. It is demonstrated that pulses with 7 mW/mum2 can be used to ...
Matsukawa, N.; Odagawa, A.; Sugita, Y.; Kawashima, Y.; Morinaga, Y.; Satomi, M.; Hiramoto, M.; Kuwata, J. Magnetics Conference, 2002. INTERMAG Europe 2002. Digest of Technical Papers. 2002 IEEE International, 2002
Summary form only given. The applications of magnetic tunnel junctions (MTJs) for devices with CMOS such as MRAM need a high tunneling magnetoresistance ratio (TMR) and good thermal stability over 400/spl deg/C. Exchange-biased MTJs with CoFe and Mn-X antiferromagnetic layer show large TMR but annealing over 350/spl deg/C degrades the TMR due to diffusing Mn. Exchange-biased MTJs with a magnetic ...
Yen-Chi Lee; Chia-Hao Lin; Mishra, A.K.; Te-Ho Wu; Jong-Ching Wu Magnetics, IEEE Transactions on, 2014
The transport properties of stacked CoFeB (1.86)/MgO (0.2)/Fe-nanoparticles ( tFe)/MgO (0.5)/CoFeB(0.6) double barrier magnetic tunnel junctions have been characterized. In this investigation, stacked film is prepared by magnetron sputter system, annealed at 250 °, and patterned into a micron-scale device using standard electron beam lithography in conjunction with two-angle ion beam etching. First, the structure, magnetic and electrical properties are ...
Rodriguez-Ruiz, G.A.; Gutierrez-Dominguez, E.A.; Sarmiento-Reyes, A.; Stanojevic, Z.; Kosina, H.; Guarin, F.J.; Garcia-Ramirez, P.J. Electron Device Letters, IEEE, 2015
An experimental-simulation methodology to explore the spatially nonhomogeneous properties of the tunneling current in nanoscaled MOSFET is introduced. The magnetic field B is introduced into the Schrödinger-Poisson system, which allows simulating the effect of the B field on the gate oxide tunneling current and be compared with experimental data. We found out that sweeping the B field from negative to ...
Duan, H.; Gupta, A.; Li, Y.; Tseng, H.W.; van Dover, R.B. Magnetics, IEEE Transactions on, 2012
Low-frequency noise, i.e., 1/f noise severely limits the low-frequency performance of magnetoresistive sensors for applications as ultrasensitive magnetic sensors. The combination of a flux concentrator and chopping system has been proposed to mitigate the effect of 1/f noise and improve the field sensitivity. This paper reports a high-efficiency chopping system for magnetoresistive sensors. A simple reluctance analysis allows us to ...
ASC-2014 SQUIDs 50th Anniversary: 3 of 6 - Bob Fagaly
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 6 of 7 - A high sensitive magnetometer system for natural magnetic field measurements
IEEE Magnetics 2014 Distinguished Lectures - Tim St Pierre
IEEE Magnetics 2014 Distinguished Lectures - JONATHAN COKER
High Magnetic Field Science and its Application in the US - ASC-2014 Plenary series - 10 of 13 - Friday 2014/8/15
ASC-2014 SQUIDs 50th Anniversary: 4 of 6 - Keiji Enpuku
Magmites: Wireless Resonant Magnetic Microrobots
The Josephson Effect: The Observations of Josephson's Effects
ASC-2014 SQUIDs 50th Anniversary: 2 of 6 - John Clarke - The Ubiquitous SQUID
Niobium Manufacturing for Superconductivity - ASC-2014 Plenary series - 5 of 13 - Tuesday 2014/8/12
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 3 of 7 - MEG and ULF-MRI
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 4 of 7 - MRI at 130 Microtesla
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 5 of 7 - SQUID Instrumentation for Early Cancer Diagnostics
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 7 of 7 - SQUID-based noise thermometers for sub-Kelvin thermometry
Large Motion Range Magnet Levitation Using a Planar Array of Coils
The Josephson Effect: The Original SQUIDs
The Josephson Effect: SQUIDs Then and Now: From SLUGS to Axions
High Frequency Magnetic Circuit Design for Power Electronics
Renco Electronics: Renco Everywhere
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