Conferences related to Magnetic tunneling

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INTERMAG 2014 - IEEE International Magnetics Conference

Intermag is the premier conference on applied magnetics which allows scientists and engineers from all over to world to meet and discuss novel developments in magnetics, magnetic materials and associated technologies.


2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, Steep Subthreshold devices and other energy efficiency related devices, Advanced gate stack science and technology, More-than-Moore Device integration and applications, DRAM, SRAM and Emerging NVM, technologies such as RRAM and MRAM, Advanced Interconnect technology, Embedded Memory, Advanced packaging technology, FinFET, SOI and fully depleted devices, Nanoelectronic materials /process/devices, Device and interconnect reliability, 3D Integration technology, Process and device modeling, Yield enhancement, Thin Film and Flexible Electronics, Process control and advanced manufacturing technologies, Organic electronics and photonics, MEMS and Sensors, Analog/RF devices and technologies, Advanced lithography technology and next generation lithography, Advanced process technology.



Periodicals related to Magnetic tunneling

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Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.



Most published Xplore authors for Magnetic tunneling

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Xplore Articles related to Magnetic tunneling

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Back-hopping phenomenon in perpendicular mangetic tunnel junctions

Sheng-Huang Huang; Kuei-Hung Shen; Cheng-Wei Chien; Shan-Yi Yang; Jia-Hong Shyu; Ding-Yeong Wang; Keng-Ming Kuo; Tzu-Kun Ku; Deng, D. VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on, 2015

This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damping torque, at higher bias voltages in dual-MgO p-MTJ, and a thinner MgO capping layer may suppress the occurrence of back hopping.


Spin transfer effect in magnetic tunnel junction with a nano-current-channel Layer in free layer

Meng, Hao; Jian-Ping Wang Magnetics, IEEE Transactions on, 2005

The current-induced magnetization switching (spin transfer effect) in a low resistance-area (RA) product magnetic tunnel junction (MTJ) device with critical current density of 1.4×107 A/cm2 was demonstrated. The RA product of the MTJ is 4.2 Ωμm2 and the magnetoresistance (MR) ratio induced by current is up to 16%. An MTJ structure with a novel nano-current-channel (NCC) layer inserted into the ...


STT-MRAM-Based Strong PUF Architecture

Vatajelu, E.I.; Di Natale, G.; Torres, L.; Prinetto, P. VLSI (ISVLSI), 2015 IEEE Computer Society Annual Symposium on, 2015

Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) and Strong PUFs (i.e., devices able to deal with multiple challenges) are widely discussed in literature. The most investigated solutions today are ...


Spin Transport in <formula formulatype="inline"> \hbox {Co/Al}_{2}\hbox {O}_{3}/\hbox {Alq}_{3}/\hbox {Co} </formula> Organic Spin Valve

Xianmin Zhang; Mizukami, S.; Kubota, T.; Oogane, M.; Naganuma, H.; Ando, Y.; Miyazaki, T. Magnetics, IEEE Transactions on, 2011

Organic spin valve devices with Co/Al2O3/8-hydroxyquinoline-aluminum (Alq3)/Co sandwich structure were fabricated and studied. Spin transport properties in the devices were investigated by measuring the current-voltage behavior and magnetoresistance (MR) at low temperature. With Al2O3 insertion, the relatively larger and positive MR ratio was observed with maximum value of around 19% at 5 K. The MR ratio was reduced with increasing ...


Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop

Windbacher, T.; Mahmoudi, H.; Sverdlov, V.; Selberherr, S. Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on, 2014

Recently, we proposed an alternative nonvolatile magnetic flip flop which allows high integration density. This work extends the up to now gained results to the devices' functionality under statistically distributed magnetization variations of its free layer. Assuming position uncorrelated random fluctuations in the free layer, that the variations are fixed with respect to time, and that small deviations from its ...


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Educational Resources on Magnetic tunneling

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eLearning

Back-hopping phenomenon in perpendicular mangetic tunnel junctions

Sheng-Huang Huang; Kuei-Hung Shen; Cheng-Wei Chien; Shan-Yi Yang; Jia-Hong Shyu; Ding-Yeong Wang; Keng-Ming Kuo; Tzu-Kun Ku; Deng, D. VLSI Technology, Systems and Application (VLSI-TSA), 2015 International Symposium on, 2015

This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damping torque, at higher bias voltages in dual-MgO p-MTJ, and a thinner MgO capping layer may suppress the occurrence of back hopping.


Spin transfer effect in magnetic tunnel junction with a nano-current-channel Layer in free layer

Meng, Hao; Jian-Ping Wang Magnetics, IEEE Transactions on, 2005

The current-induced magnetization switching (spin transfer effect) in a low resistance-area (RA) product magnetic tunnel junction (MTJ) device with critical current density of 1.4×107 A/cm2 was demonstrated. The RA product of the MTJ is 4.2 Ωμm2 and the magnetoresistance (MR) ratio induced by current is up to 16%. An MTJ structure with a novel nano-current-channel (NCC) layer inserted into the ...


STT-MRAM-Based Strong PUF Architecture

Vatajelu, E.I.; Di Natale, G.; Torres, L.; Prinetto, P. VLSI (ISVLSI), 2015 IEEE Computer Society Annual Symposium on, 2015

Physically Unclonable Functions (PUFs) are emerging cryptographic primitives used to implement low-cost device authentication and secure secret key generation. Weak PUFs (i.e., devices able to generate a single signature or to deal with a limited number of challenges) and Strong PUFs (i.e., devices able to deal with multiple challenges) are widely discussed in literature. The most investigated solutions today are ...


Spin Transport in <formula formulatype="inline"> \hbox {Co/Al}_{2}\hbox {O}_{3}/\hbox {Alq}_{3}/\hbox {Co} </formula> Organic Spin Valve

Xianmin Zhang; Mizukami, S.; Kubota, T.; Oogane, M.; Naganuma, H.; Ando, Y.; Miyazaki, T. Magnetics, IEEE Transactions on, 2011

Organic spin valve devices with Co/Al2O3/8-hydroxyquinoline-aluminum (Alq3)/Co sandwich structure were fabricated and studied. Spin transport properties in the devices were investigated by measuring the current-voltage behavior and magnetoresistance (MR) at low temperature. With Al2O3 insertion, the relatively larger and positive MR ratio was observed with maximum value of around 19% at 5 K. The MR ratio was reduced with increasing ...


Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop

Windbacher, T.; Mahmoudi, H.; Sverdlov, V.; Selberherr, S. Ultimate Integration on Silicon (ULIS), 2014 15th International Conference on, 2014

Recently, we proposed an alternative nonvolatile magnetic flip flop which allows high integration density. This work extends the up to now gained results to the devices' functionality under statistically distributed magnetization variations of its free layer. Assuming position uncorrelated random fluctuations in the free layer, that the variations are fixed with respect to time, and that small deviations from its ...


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