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INTERMAG 2014 - IEEE International Magnetics Conference
Intermag is the premier conference on applied magnetics which allows scientists and engineers from all over to world to meet and discuss novel developments in magnetics, magnetic materials and associated technologies.
2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, Steep Subthreshold devices and other energy efficiency related devices, Advanced gate stack science and technology, More-than-Moore Device integration and applications, DRAM, SRAM and Emerging NVM, technologies such as RRAM and MRAM, Advanced Interconnect technology, Embedded Memory, Advanced packaging technology, FinFET, SOI and fully depleted devices, Nanoelectronic materials /process/devices, Device and interconnect reliability, 3D Integration technology, Process and device modeling, Yield enhancement, Thin Film and Flexible Electronics, Process control and advanced manufacturing technologies, Organic electronics and photonics, MEMS and Sensors, Analog/RF devices and technologies, Advanced lithography technology and next generation lithography, Advanced process technology.
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
Slaughter, Jon M. Device Research Conference, 2007 65th Annual, 2007
In this paper we review recent progress, present specifics of Freescale's commercial MRAM device, and discuss the future outlook for MRAM technology, including the extension of Toggle MRAM to meet industrial/automotive requirements, and scaling behavior to the reduced dimensions of advanced technology nodes. We have performed extensive operational characterization and accelerated stress testing of our extended-range MRAM technology and validated ...
Sharad, M.; Augustine, C.; Panagopoulos, G.; Roy, K. Nanoscale Architectures (NANOARCH), 2012 IEEE/ACM International Symposium on, 2012
In this work we present an ultra low energy, `on-sensor' image processing architecture, based on cellular network of spin based neurons. The `neuron' constitutes of a lateral spin valve (LSV) with multiple input magnets, connected to an output magnet, using metal channels. The low resistance, magneto-metallic neurons operate at a small terminal voltage of ~20mV, while performing analog computation upon ...
Munira, K.; Butler, W. H.; Ghosh, A. W. Electron Devices, IEEE Transactions on, 2012
One of the biggest challenges that the current spin-transfer-torque-based random access memory (STT-RAM) industry faces is maintaining high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics-based analytical model that uses a modified Simmons tunneling expression to capture the spin-dependent tunneling in a magnetic tunnel junction (MTJ). Coupled ...
Matsunaga, S.; Hayakawa, J.; Ikeda, S.; Miura, K.; Endoh, T.; Ohno, H.; Hanyu, T. Design, Automation & Test in Europe Conference & Exhibition, 2009. DATE '09., 2009
Nonvolatile logic-in-memory architecture, where nonvolatile memory elements are distributed over a logic-circuit plane, is expected to realize both ultra- low-power and reduced interconnection delay. This paper presents novel nonvolatile logic circuits based on logic-in-memory architecture using magnetic tunnel junctions (MTJs) in combination with MOS transistors. Since the MTJ with a spin-injection write capability is only one device that has all ...
Wang Kang; Zheng Li; Yuanqing Cheng; Klein, J.-O.; Youguang Zhang; Ravelosona, D.; Chappert, C.; Weisheng Zhao Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on, 2014
Emerging magnetic random access memory (MRAM) has been considered as a promising candidate for the next generation high speed, low power and scalable nonvolatile memory technology. However many challenges and issues are still existing before its wide commercialization. One of the critical issues is its low sensing reliability due to the relatively small tunnel magneto-resistance (TMR) ratio of the magnetic ...
High Magnetic Field Science and its Application in the US - ASC-2014 Plenary series - 7 of 13 - Friday 2014/8/15
ASC-2014 SQUIDs 50th Anniversary: 4 of 6 - Keiji Enpuku
Magmites: Wireless Resonant Magnetic Microrobots
Niobium Manufacturing for Superconductivity - ASC-2014 Plenary series - 4 of 13 - Tuesday 2014/8/12
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 3 of 7 - MEG and ULF-MRI
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 4 of 7 - MRI at 130 Microtesla
ISEC 2013 Special Gordon Donaldson Session: Remembering Gordon Donaldson - 5 of 7 - SQUID Instrumentation for Early Cancer Diagnostics
Large Motion Range Magnet Levitation Using a Planar Array of Coils
The Josephson Effect: The Original SQUIDs
The Josephson Effect: SQUIDs Then and Now: From SLUGS to Axions
High Frequency Magnetic Circuit Design for Power Electronics
Renco Electronics: Renco Everywhere
Superconductive Energy-Efficient Computing - ASC-2014 Plenary-series - 6 of 13 - Wednesday 2014/8/13
Advances in MgB2 - ASC-2014 Plenary series - 7 of 13 - Wednesday 2014/8/13
ASC-2014 SQUIDs 50th Anniversary: 1 of 6 Arnold Silver
ASC-2014 SQUIDs 50th Anniversary: 3 of 6 - Bob Fagaly
ASC-2014 SQUIDs 50th Anniversary: 6 of 6 - Kent Irwin - SQUIDs as detectors for cosmology
The Josephson Effect: The Observations of Josephson's Effects
The Josephson Effect: Brian Josephson Debates John Bardeen
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