Conferences related to Magnetic tunneling

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INTERMAG 2014 - IEEE International Magnetics Conference

Intermag is the premier conference on applied magnetics which allows scientists and engineers from all over to world to meet and discuss novel developments in magnetics, magnetic materials and associated technologies.


2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, Steep Subthreshold devices and other energy efficiency related devices, Advanced gate stack science and technology, More-than-Moore Device integration and applications, DRAM, SRAM and Emerging NVM, technologies such as RRAM and MRAM, Advanced Interconnect technology, Embedded Memory, Advanced packaging technology, FinFET, SOI and fully depleted devices, Nanoelectronic materials /process/devices, Device and interconnect reliability, 3D Integration technology, Process and device modeling, Yield enhancement, Thin Film and Flexible Electronics, Process control and advanced manufacturing technologies, Organic electronics and photonics, MEMS and Sensors, Analog/RF devices and technologies, Advanced lithography technology and next generation lithography, Advanced process technology.



Periodicals related to Magnetic tunneling

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Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.




Xplore Articles related to Magnetic tunneling

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Spintronics - from materials through devices to circuits -

Ohno, H. Device Research Conference, 2006 64th, 2006

Spintronics is the field in which both charge and spin degrees of freedom are used to realize functions otherwise not accessible. A wide variety of research is being carried out from those that are more exploratory in nature to close to the real world applications, from novel spin based semiconductor device structures to magnetic material-semiconductor hybrid structures not only for ...


Magnetic vector-field of optical antennas from electromagnetic duality

Olmon, R.L.; Xu, X.G.; Deryckx, K.S.; Lail, B.A.; Raschke, M.B. Lasers and Electro-Optics (CLEO), 2012 Conference on, 2012

Combining scattering-scanning near-field optical microscopy (s-SNOM) with infrared synchrotron micro-spectroscopy we determine the magnetic near-field modes of an infrared linear antenna by measuring the electric field of its electro-magnetic dual, the linear slot antenna.


STT-RAM write energy consumption reduction by differential write termination method

Farkhani, Hooman; Peiravi, Ali; Madsen, Jens K.; Moradi, Farshad Circuits and Systems (ISCAS), 2015 IEEE International Symposium on, 2015

Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive candidate for future non-volatile memories. However, the write operation in 1T-1MTJ STT-RAM bit-cells is asymmetric and stochastic which leads to high energy consumption and long latency. In this paper, a new write assist technique is proposed to terminate the write operation immediately after switching takes place in the MTJ. ...


Progress and outlook for MRAM technology

Tehrani, S.; Slaughter, J.M.; Chen, E.; Durlam, M.; Shi, J.; DeHerren, M. Magnetics, IEEE Transactions on, 1999

We summarize the features of existing semiconductor memories and compare them to Magnetoresistive Random Access Memory (MRAM),a semiconductor memory with magnetic bits for nonvolatile storage. MRAM architectures based on Giant Magnetoresistance (GMR) and Magnetic Tunnel Junction (MTJ) cells are described. This paper will discuss our progress on improving the material structures, memory bits, thermal stability of the bits, and competitive ...


Current-Induced Magnetization Switching Probability in MgO-Based Magnetic Tunnel Junctions

Lee, J.M.; Ye, L.X.; Weng, M.C.; Chen, Y.C.; Su, J.P.; Wu, Te-Ho Magnetics, IEEE Transactions on, 2007

We report the results of current-induced magnetization switching (CIMS) for MgO-based magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance (TMR) ratio of about 66% and a critical current density of 4.45times106 A/cm2. The stable switching probability related to CIMS over 1times104 cycles is observed up to 90%. The influence between the switching current and the pulse duration is discussed


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