Conferences related to Magnetic tunneling

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INTERMAG 2014 - IEEE International Magnetics Conference

Intermag is the premier conference on applied magnetics which allows scientists and engineers from all over to world to meet and discuss novel developments in magnetics, magnetic materials and associated technologies.

2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Conventional and Novel device concepts in CMOS, SiGe bipolar, and BiCMOS IC technologies, Steep Subthreshold devices and other energy efficiency related devices, Advanced gate stack science and technology, More-than-Moore Device integration and applications, DRAM, SRAM and Emerging NVM, technologies such as RRAM and MRAM, Advanced Interconnect technology, Embedded Memory, Advanced packaging technology, FinFET, SOI and fully depleted devices, Nanoelectronic materials /process/devices, Device and interconnect

Periodicals related to Magnetic tunneling

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Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.

Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.

Xplore Articles related to Magnetic tunneling

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Locating magnetic noise sources in TMR and GMR recording heads using scanning probe microscopy

Yuan, L.; Shen, J.X.; Pant, Bharat B. Magnetics, IEEE Transactions on, 2004

A scanning magnetic microscope was designed and built to pinpoint the location of magnetic noise induced by magnetic instabilities in submicrometer-sized giant magnetoresistive (GMR) and tunneling magnetoresistive (TMR) recording heads. A scanning nanometer-sized magnetic tip was used to generate a localized magnetic field and excite the free-layer magnetic moment at the air- bearing surface (ABS). The spectral response of the ...

Shot Noise in Epitaxial Double-Barrier Magnetic Tunnel Junctions

Cascales, J.P.; Martin, L.; Dulluard, A.; Hehn, M.; Tiusan, C.; Szczepanski, T.; Dugaev, V.; Barnas, J.; Aliev, F.G. Magnetics, IEEE Transactions on, 2013

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the magnetic configuration of the junction- the P-state with the magnetic moments of all three ferromagnetic layers aligned parallel, the AP1 state with the central electrode magnetized opposite to its neighbors, and two different AP2 states with the magnetic moment of the upper or bottom electrode ...

Thermally Assisted Magnetic Tunneling Junction for Biosensing Applications

Weizhong Wang; Jiang, Zhenye Magnetics, IEEE Transactions on, 2007

We present a concept of the thermally assisted magnetic tunneling junction (MTJ)-based biosensor. The sensor consists of an MTJ, an isolation layer, and a gold coating layer right underneath a biocoating layer. During the sensing phase, a current pulse heats the top free ferromagnet of the MTJ stack above its blocking temperature. The top magnet loses its magnetization at this ...

Perpendicular Co-Zn-Gd Magnetic Film Electrodeposited by Molten Chlorozincate Electrolyte

Shu, M.; Wu, T.; Yang, C. Magnetics Conference, 2006. INTERMAG 2006. IEEE International, 2006

We have utilized ZnCl2-dimethylsulfone (DMSO2) as the electrolyte with added CoCl2 and GdCl3 for electrodepositing a magnetic film. Moreover, the controlled potential method was utilized for film deposition. The voltammogram revealed that the reduction of Co-Zn-Gd film can be achieved by applying a potential in the range from -0.1 to -0.5 volts. From the results of AGM analyses, a high ...

Tuning Magnetic Microstructures of Reference Layer in Magnetic Tunneling Junctions

Yuan, L.; Lin, Y.S.; Dexin Wang; Liou, S.H. Magnetics, IEEE Transactions on, 2007

Magnetic microstructures in the reference layer in magnetic tunneling junctions (MTJs) are tuned by a reversal field under ambient conditions to investigate their effects on the magnetoresistance (MR) and the exchange coupling field (HE) between the reference layer and the free layer. Magnetization changes in the reference layer can be probed by measuring minor MR loops. The results show the ...

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Standards related to Magnetic tunneling

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