72 resources related to MIM devices
- Topics related to MIM devices
- IEEE Organizations related to MIM devices
- Conferences related to MIM devices
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- Most published Xplore authors for MIM devices
2016 IEEE 66th Electronic Components and Technology Conference (ECTC)
premier components, packaging and technology conference
the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.
2015 IEEE MTT-S International Microwave Symposium (IMS2015)
The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh
2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems
The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.
2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)
This conference focuses on new developments in test structures, as well as their implementation and/or application, related to silicon, semiconductors, nanotechnology and MEMS. Suggested topics include Material and Process Characterization, Device and Circuit Modeling, Parameter Extraction, Yield Enhancement and Production Process Control and so on.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
An Chen Reliability Physics Symposium (IRPS), 2010 IEEE International, 2010
Cycling failures for resistive switching devices are discussed based on array statistics measured on Cu2O metal-insulator-metal (MIM) devices. Four types of failures can be identified under rigorous testing conditions. The rate of these failures can be reduced by optimizing operation methods, which has significant impact on cycling endurance and yield. Failures related to data loss may have their origin in ...
Periasamy, P.; Bergeson, Jeremy D.; Parilla, P.A.; Ginley, D.S.; O'Hayre, R.P. Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, 2010
The rectenna (rectifying antenna), if extended to operate at visible light, will revolutionize the way sunlight is harvested for electricity. The focus of this work is to develop a suitable rectifier component of the rectenna for rectifying high-frequency radiation. In this work, a point-contact metal- insulator-metal (MIM) diode based on Nb-Nb2O5 and Nb-TiO2 was fabricated and successfully tested at low ...
Marshalek, R.; Davidson, F.M. Quantum Electronics, IEEE Journal of, 1983
Photoinduced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV ![\leq hf \leq 2.7](/images/tex/2697.gif) eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron- electron collisions were found to strongly influence the photoassisted tunneling currents.
Wilt, D.M.; Fatemi, Navid S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W., Jr.; Murray, C.S.; Riley, D.R. Energy Conversion Engineering Conference, 1997. IECEC-97., Proceedings of the 32nd Intersociety, 1997
There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This tradeoff originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM ...
Marin, M.; Cremer, S.; Giraudin, J.-G.; Martinet, B. Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on, 2007
In this contribution we investigate the matching properties of modern high-k metal-insulator-metal (MIM) capacitors. In particular, we derive a compact physics-based model in order to explain the observed geometry dependence of mismatch. This model is successfully applied to MIM devices processed with Ta2O5 and AI2O3 as dielectrics.
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