107 resources related to MIM devices
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2017 IEEE 67th Electronic Components and Technology Conference (ECTC)
premier components, packaging and technology conference
the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.
2017 IEEE/MTT-S International Microwave Symposium - MTT 2017
The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.
2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems
The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.
2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)
This conference focuses on new developments in test structures, as well as their implementation and/or application, related to silicon, semiconductors, nanotechnology and MEMS. Suggested topics include Material and Process Characterization, Device and Circuit Modeling, Parameter Extraction, Yield Enhancement and Production Process Control and so on.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
B. El-Kareh; S. Balster; W. Leitz; P. Steinmann; H. Yasuda; M. Corsi; K. Dawoodi; C. Dirnecker; P. Foglietti; A. Haeusler; P. Menz; M. Ramin; T. Scharnagl; M. Schiekofer; M. Schober; U. Schulz; L. Swanson; D. Tatman; M. Waitschull; J. W. Weijtmans; C. Willis 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440), 2003
A novel complementary-SiGe BiCMOS technology developed for ultra-high speed precision analog circuits is presented. The modular process offers comparable NPN and PNP performance utilizing unique interface and SiGe base process.
Letao Yang; Hanbin Wang; Xijian Zhang; Yuxiang Li; Xiufang Chen; Xiangang Xu; Xian Zhao; Aimin Song IEEE Transactions on Electron Devices, 2017
A thermally evaporated silicon monoxide (SiO) film has been experimented as the gate dielectric in graphene field-effect transistors (GFETs) due to its room-temperature and low-damage deposition without introducing chemical gases or ionized particles as in other film deposition techniques, which may cause damage to graphene. In order to evaluate the dielectric properties, a double- gated GFET was fabricated with a ...
Jeremy A. Davis; Kumarevelu Ganesan; Andrew D. C. Alves; Dale A. Prokopovich; Susanna Guatelli; Marco Petasecca; Michael L. F. Lerch; David N. Jamieson; Anatoly B. Rosenfeld IEEE Transactions on Nuclear Science, 2014
A diamond microdosimeter prototype with sensitive volumes separated through laser milled trenches is characterized. It is proposed that this design will offer a new and alternative means of creating a diamond based microdosimeter. The device has been characterized by means of ion beam induced charge collection (IBIC) measurements. In this work, it is shown that laser milled trenches have a ...
K. C. Chiang; C. H. Cheng; K. Y. Jhou; H. C. Pan; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin; H. L. Hwang IEEE Electron Device Letters, 2007
We have studied the stress reliability of low-energy-bandgap high- metal- insulator-metal capacitors under constant voltage stress. By using a high- work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (DeltaC/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the ...
Cheng-Chih Hsieh; Anupam Roy; Yao-Feng Chang; Amritesh Rai; Sanjay Banerjee 2015 73rd Annual Device Research Conference (DRC), 2015
Resistive random access memory (RRAM) is attractive as a promising candidate for next generation nonvolatile memory due to its potential scalability beyond 10 nm feature size using a crossbar structure, fast switching speed, low operating power, and good reliability. Cerium oxide has high dielectric constant and various valance states, making cerium oxide a potential material for RRAM application. Nevertheless, fundamental ...
Lasers and Electro-Optics (CLEO), 2011 Conference on, 2011
We fabricate subwavelength varying periodicity toothed metal-insulator-metal waveguides for mid-infrared frequencies. The transmission spectra of these structures for TM and TE polarized light is investigated, and our results compared to numerical simulations.
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE, 1997
A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, ...
Electron Device Letters, IEEE, 2007
We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10-7 A/cm2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work- function Ir electrode, and large conduction band offset.
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 2003
Current integrated circuit miniaturization will soon require device sizes at atomic scale. Recent work has proposed many Coulomb blockade, and tunneling devices as active devices. However, among passive components, capacitors are extremely critical circuit elements in all electronic circuits with wide range applications. In this work, we present the operational criteria that will govern the feasibility of nanocapacitors for future ...
Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE, 2007
RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si3N4 dielectric in the copper back-end of a 0.13 mum BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.
IMS 2011 Microapps - Volume Manufacturing Trends for Automotive Radar Devices
APEC 2011-GaN Based Power Devices in Power Electronics
Mobile Internet Devices at Intel
Care Innovations: Toxics In Electronics (com legendas em portugues)
Introducing DAGSI Whegs
IEEE 125th Anniversary Media Event: Dynamic Composable Computing
IEEE 125th Anniversary Media Event: Cognitive Computing
Care Innovations: Responsibility For Being Green (com legendas em portugues)
EMBC 2011-Keynote Lectures and Panel Discussion-PT II-Xian-En Zhang
ICASSP 2010 - Advances in Neural Engineering
Recycling of Computers & Consumer Electronics
International Broadcast Conference(IBC) News: Segment 3
A Gaming Glove That's Fast Enough for Pros
Presidents' Change the World Segment
Medal Of Honor: Dr. Andrew Viterbi
IEEE Medal of Honor Recipient (2008): Dr. Gordon Moore
Care Innovations: Responsibility For Being Green
Care Innovations: Toxics In Electronics
System???on???chip (SoC) and system???inpackage (SiP) technologies have become the core business in communication industries over the past decade. When the operating frequency goes high, one may experience difficulties in realizing synthesized transmission lines using PCB processes due to the limitation of line resolution. To alleviate the problem, the integrated passive device (IPD) process, having received considerable attention in the SiP integration, is applied to fulfill on???chip synthesized transmission lines and hence circuit miniaturization at higher frequencies. In this chapter, a variety of synthesized transmission lines using the IPD technology are introduced to realize on???chip microwave/millimeter???wave passive components. On???chip synthesized lines, generally consisting of quasi???lumped meander/spiral inductors, metal???insulator???metal (MIM) capacitors, and open stubs, feature an extremely compact size with impressive slow wave factor. The concept of multi???mode operation is also fulfilled by quasi???lumped components on the IPD substrate. Their applications to the multiplexer, antenna decoupling network, and liquid detector are also discussed.
This appendix contains sections titled: Vacuum Tubes Superconducting Devices Inductor and Transformer Liquid-Crystal Display (LCD) Thermocouple and Thermopile Metal-Insulator-Metal (MIM) Diode Single-Electron Transistor (SET)
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