73 resources related to MIM devices
- Topics related to MIM devices
- IEEE Organizations related to MIM devices
- Conferences related to MIM devices
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- Most published Xplore authors for MIM devices
2016 IEEE 66th Electronic Components and Technology Conference (ECTC)
premier components, packaging and technology conference
the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.
2015 IEEE MTT-S International Microwave Symposium (IMS2015)
The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh
2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems
The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.
2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)
This conference focuses on new developments in test structures, as well as their implementation and/or application, related to silicon, semiconductors, nanotechnology and MEMS. Suggested topics include Material and Process Characterization, Device and Circuit Modeling, Parameter Extraction, Yield Enhancement and Production Process Control and so on.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Cremer, S.; Segura, N.; Joubin, P.; Marin, M.; Thomas, M.; Richard, C.; Boret, S.; Benoit, D.; Bruyere, S. Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE, 2007
RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si3N4 dielectric in the copper back-end of a 0.13 mum BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.
Wilt, D.M.; Fatemi, Navid S.; Jenkins, P.P.; Weizer, V.G.; Hoffman, R.W., Jr.; Murray, C.S.; Riley, D.R. Energy Conversion Engineering Conference, 1997. IECEC-97., Proceedings of the 32nd Intersociety, 1997
There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between system efficiency and power density. This tradeoff originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM ...
Walczyk, Ch.; Schroeder, T.; Lukosius, M.; Fraschke, M.; Fox, A.; Wolansky, D.; Tillack, B.; Wenger, Ch. Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual, 2009
Bipolar resistive switching in TiN/HfO2/Ti/TiN devices using a CMOS technology process is demonstrated. The performance metrics include a retention time >105 s and a cycling endurance in dc sweep mode >102. By controlling either the set current Iset or by setting an appropriate stop voltage Vstop, the devices hold the potential for multilevel operation. The results suggest that HfO2-based MIM ...
Bajolet, A.; Clerc, R.; Pananakakis, G.; Tsamados, D.; Picollet, E.; Segura, N.; Giraudin, J.-G.; Delpech, P.; Montes, L.; Ghibaudo, Gerard Electron Devices, IEEE Transactions on, 2007
This paper discusses the optimization of series resistance of nonplanar metal- insulator-metal capacitor, i.e., an original 3-D capacitor with a capacitance density of 35 nF/mm2, used in very large scale integration. A fully analytical and physically based model of its series resistance versus material and geometrical parameters has been developed, in excellent agreement with both 3-D numerical simulations and experiments. ...
Mukhopadhyay, S.; Bhunia, S.; Hunter, H.C.; Roy, K. Emerging and Selected Topics in Circuits and Systems, IEEE Journal on, 2014
This special issue focuses on circuit, architecture, and system aspects of computing in beyond-CMOS technologies.
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