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2014 IEEE 64th Electronic Components and Technology Conference (ECTC)
Premier components, packaging and technology
2014 IEEE International Electron Devices Meeting (IEDM)
IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.
2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems
The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.
2013 5th IEEE International Memory Workshop (IMW)
This conference brings the memory community together in a workshop environment to discuss the memory process and design technologies, applications, market needs and strategies. It is sponsored by the IEEE Electron Devices Society and meets annually in May. The IMW is a unique forum for specialists in all aspects of memory microelectronics and people with different backgrounds who wish to gain a better understanding of the field. The morning and afternoon technical sessions are organized in a manner to prov
Periasamy, P.; O'Hayre, R.P.; Berry, J.J.; Parilla, Philip A.; Ginley, D.S.; Packard, C.E. Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE , 2011
Metal-Insulator-Metal (MIM) devices are crucial components for applications ranging from optical rectennas for harvesting sunlight to infrared detectors. To date, the relationship between materials properties and device performance in MIM devices is not fully understood, partly due to the difficulty in making and reproducing reliable devices. One configuration that is popular due to its simplicity and ease of fabrication is ...
Tseng, V.F.-G.; Huikai Xie Electron Devices, IEEE Transactions on , 2014
This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide ...
Gilmer, D.C.; Goel, N.; Park, H.; Park, C.; Barnett, J.; Kirsch, P.D.; Jammy, R. Memory Workshop, 2009. IMW '09. IEEE International , 2009
We demonstrate for the first time molybdenum based oxygen-bearing electrodes for improved performance in MANOS (Metal-Alumina-Nitride-Oxide) charge-trap NVM, and also MIM-DRAM type devices. The meta-stable high work- function (Wfn) molybdenum-oxynitride (MoON) electrodes result in improved retention and erase saturation for the charge trap NVM devices and improved leakage for the MIM devices. Although some of the observed improvements, compared to ...
Jung-Min Park; Min-Woo Song; Weon-Hong Kim; Pan-Kwi Park; Yong-Kuk Jung; Ju-Youn Kim; Won, Seok-Jun; Jong-Ho Lee; Nae-In Lee; Ho-Kyu Kang Electron Devices Meeting, 2007. IEDM 2007. IEEE International , 2007
We have successfully integrated a mass production worthy MIM capacitor on gate polysilicon (MIM-COG) structure using HfO2/HfOxCyNz/HfO2(HNH) dielectric for the analog/RF/mixed signal application. The insertion of HfOxCyNz into HfO2 films can successfully suppress the crystallization. As a result, HNH film shows superior breakdown and VCC-a characteristics compared to HfO2-AI2O3 multilayer stack. In addition, we suggest novel MIM-COG structure, which can ...
Cremer, S.; Segura, N.; Joubin, P.; Marin, M.; Thomas, M.; Richard, C.; Boret, S.; Benoit, D.; Bruyere, S. Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE , 2007
RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si3N4 dielectric in the copper back-end of a 0.13 mum BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.
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Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.