71 resources related to MIM devices
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2016 IEEE 66th Electronic Components and Technology Conference (ECTC)
premier components, packaging and technology conference
the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.
2015 IEEE MTT-S International Microwave Symposium (IMS2015)
The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh
2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems
The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.
2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)
This conference focuses on new developments in test structures, as well as their implementation and/or application, related to silicon, semiconductors, nanotechnology and MEMS. Suggested topics include Material and Process Characterization, Device and Circuit Modeling, Parameter Extraction, Yield Enhancement and Production Process Control and so on.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Cremer, S.; Segura, N.; Joubin, P.; Marin, M.; Thomas, M.; Richard, C.; Boret, S.; Benoit, D.; Bruyere, S. Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE, 2007
RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si3N4 dielectric in the copper back-end of a 0.13 mum BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.
Yuh-Zheng Lee; Chung-Ping Liu; Sha-Man Wang; Chia-Hsun Chen; Chung-Wei Wang; Ming-Huan Yang; Cheng, K.; Chang, J. Lasers and Electro-Optics, 2005. CLEO/Pacific Rim 2005. Pacific Rim Conference on, 2005
We ink-jet printed PMMA solution with organic solvent to form insulator. Experimental results indicated that the leakage current for ink-jet fabricated insulator was about 10nA/cm2at 3V, and the dielectric constant for the printed insulator was about 3.0.
Periasamy, P.; Bergeson, Jeremy D.; Parilla, P.A.; Ginley, D.S.; O'Hayre, R.P. Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE, 2010
The rectenna (rectifying antenna), if extended to operate at visible light, will revolutionize the way sunlight is harvested for electricity. The focus of this work is to develop a suitable rectifier component of the rectenna for rectifying high-frequency radiation. In this work, a point-contact metal- insulator-metal (MIM) diode based on Nb-Nb2O5 and Nb-TiO2 was fabricated and successfully tested at low ...
Agarwal, V.K.; Lin, F.; Smith, R.B. Electrical Insulation and Dielectric Phenomena, 1988. Annual Report., Conference on, 1988
The authors report preliminary results on the capacitance versus voltage (C-V) characteristics of MIS devices containing thermally grown fatty-acid films as insulators. A comparative study is carried out between the C-V plots of devices with Si-SiO2 and with Si-SiO 2-fatty-acid film interfaces. The authors also discuss results on the DC breakdown behavior of these films in metal- insulator-metal type devices. ...
El-Kareh, B.; Balster, S.; Leitz, W.; Steinmann, P.; Yasuda, H.; Corsi, M.; Dawoodi, K.; Dirnecker, C.; Foglietti, P.; Haeusler, A.; Menz, P.; Ramin, M.; Scharnagl, T.; Schiekofer, M.; Schober, M.; Schulz, U.; Swanson, L.; Tatman, D.; Waitschull, M.; Weijtmans, J.W.; Willis, C. Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the, 2003
A novel complementary-SiGe BiCMOS technology developed for ultra-high speed precision analog circuits is presented. The modular process offers comparable NPN and PNP performance utilizing unique interface and SiGe base process.
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