Conferences related to MIM devices

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2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

  • 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2016 IEEE 66th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

    Premier components, packaging and technology

  • 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2010 IEEE 60th Electronic Components and Technology Conference (ECTC 2010)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009)

    Advanced packaging, electronic components & RF, emerging technologies, materials & processing, manufacturing technology, interconnections, quality & reliability, modeling & simulation, optoelectronics.

  • 2008 IEEE 58th Electronic Components and Technology Conference (ECTC 2008)


2017 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2021 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2019 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

  • 2015 IEEE International Electron Devices Meeting (IEDM)

    the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2014 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2013 IEEE International Electron Devices Meeting (IEDM)

    IEDM is the world s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.

  • 2012 IEEE International Electron Devices Meeting (IEDM)

  • 2011 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, Reliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices.

  • 2010 IEEE International Electron Devices Meeting (IEDM)

  • 2009 IEEE International Electron Devices Meeting (IEDM)

    CMOS Devices Technology, Characterization, REliability and Yield, Displays, sensors and displays, memory technology, modeling and simulation, process technology, solid state and nanoelectronic devices

  • 2008 IEEE International Electron Devices Meeting (IEDM)

    Over the last 53 years, the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.

  • 2007 IEEE International Electron Devices Meeting (IEDM)


2017 IEEE/MTT-S International Microwave Symposium - MTT 2017

The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2029 IEEE/MTT-S International Microwave Symposium - MTT 2029

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2021 IEEE/MTT-S International Microwave Symposium - MTT 2021

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.

  • 2019 IEEE/MTT-S International Microwave Symposium - MTT 2019

    Comprehensive symposium on microwave theory and techniques including active and passive circuit components, theory and microwave systems.

  • 2018 IEEE/MTT-S International Microwave Symposium - MTT 2018

    Microwave theory and techniques, RF/microwave/millimeter-wave/terahertz circuit design and fabrication technology, radio/wireless communication.

  • 2016 IEEE/MTT-S International Microwave Symposium - MTT 2016

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2015 IEEE MTT-S International Microwave Symposium (IMS2015)

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh

  • 2014 IEEE/MTT-S International Microwave Symposium - MTT 2014

    IMS2014 will cover developments in microwave technology from nano devices to system applications. Technical paper sessions, interactive forums, plenary and panel sessions, workshops, short courses, industrial exhibits, and a wide array of other technical activities will be offered.

  • 2013 IEEE/MTT-S International Microwave Symposium - MTT 2013

    The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter -wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics.The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011

    The IEEE International Microwave Symposium (IMS) is the world s foremost conference covering the UHF, RF, wireless, microwave, millimeter-wave, terahertz, and optical frequencies; encompassing everything from basic technologies to components to systems including the latest RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation and more. The IMS includes technical and interactive sessions, exhibits, student competitions, panels, workshops, tutorials, and networking events.

  • 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010

    Reports of research and development at the state-of-the-art of the theory and techniques related to the technology and applications of devices, components, circuits, modules and systems in the RF, microwave, millimeter-wave, submillimeter-wave and Terahertz ranges of the electromagnetic spectrum.


2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems

The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.


2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)

This conference focuses on new developments in test structures, as well as their implementation and/or application, related to silicon, semiconductors, nanotechnology and MEMS. Suggested topics include Material and Process Characterization, Device and Circuit Modeling, Parameter Extraction, Yield Enhancement and Production Process Control and so on.

  • 2012 IEEE International Conference on Microelectronic Test Structures (ICMTS)

    The Conference presents new developments in test structures, their implementation, and/or application in the fields of silicon, compound semiconductor, nanotechnology, and MEMS research, including their implementation and applications, as well as test structures aimed at the characterization of new materials and devices.

  • 2011 IEEE International Conference on Microelectronic Test Structures (ICMTS)

    ICMTS aims to bring together designers and users of microelectronic test structures. We cover new developments in test structures related to microelectronic, nanotechnology and MEMS research. This includes their implementation, and applications as well as test structures aimed at the characterisation of new materials and devices.

  • 2010 International Conference on Microelectronic Test Structures (ICMTS)

    Original papers presenting new developments in silicon, III-V compounds, and nanotechnology microelectronics test structure research, implementation, and applications as well as test structures aimed at new materials and devices characterization are solicited

  • 2009 IEEE International Conference on Microelectronic Test Structures (ICMTS)

    The ICMTS Conference brings together designers and users of test structures to discuss recent developments and future directions. The conference focuses on new developments in test structures, their implementation and/or application in the fields of silicon, compound semiconductor, nanotechnology, and MEMS research.

  • 2008 IEEE International Conference on Microelectronic Test Structures (ICMTS)

    The purpose of the conference is to bring together designers and users of test structures to discuss recent research and future directions. This includes new developments in test structures related to silicon, III-V compounds, nanotechnology, microelectronics and MEMS research. The conference also covers their implementation, and applications as well as test structures aimed at the characterization of new materials and devices.

  • 2007 IEEE International Conference on Microelectronic Test Structures (ICMTS)


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Periodicals related to MIM devices

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for MIM devices

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Xplore Articles related to MIM devices

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A 5V complementary-SiGe BiCMOS technology for high-speed precision analog circuits

B. El-Kareh; S. Balster; W. Leitz; P. Steinmann; H. Yasuda; M. Corsi; K. Dawoodi; C. Dirnecker; P. Foglietti; A. Haeusler; P. Menz; M. Ramin; T. Scharnagl; M. Schiekofer; M. Schober; U. Schulz; L. Swanson; D. Tatman; M. Waitschull; J. W. Weijtmans; C. Willis 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440), 2003

A novel complementary-SiGe BiCMOS technology developed for ultra-high speed precision analog circuits is presented. The modular process offers comparable NPN and PNP performance utilizing unique interface and SiGe base process.


Thermally Evaporated SiO Serving as Gate Dielectric in Graphene Field-Effect Transistors

Letao Yang; Hanbin Wang; Xijian Zhang; Yuxiang Li; Xiufang Chen; Xiangang Xu; Xian Zhao; Aimin Song IEEE Transactions on Electron Devices, 2017

A thermally evaporated silicon monoxide (SiO) film has been experimented as the gate dielectric in graphene field-effect transistors (GFETs) due to its room-temperature and low-damage deposition without introducing chemical gases or ionized particles as in other film deposition techniques, which may cause damage to graphene. In order to evaluate the dielectric properties, a double- gated GFET was fabricated with a ...


Characterization of an Alternative Diamond Based Microdosimeter Prototype

Jeremy A. Davis; Kumarevelu Ganesan; Andrew D. C. Alves; Dale A. Prokopovich; Susanna Guatelli; Marco Petasecca; Michael L. F. Lerch; David N. Jamieson; Anatoly B. Rosenfeld IEEE Transactions on Nuclear Science, 2014

A diamond microdosimeter prototype with sensitive volumes separated through laser milled trenches is characterized. It is proposed that this design will offer a new and alternative means of creating a diamond based microdosimeter. The device has been characterized by means of ion beam induced charge collection (IBIC) measurements. In this work, it is shown that laser milled trenches have a ...


Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog SrTiO<sub>3</sub> Metal&#x2013;Insulator&#x2013;Metal Capacitors

K. C. Chiang; C. H. Cheng; K. Y. Jhou; H. C. Pan; C. N. Hsiao; C. P. Chou; S. P. McAlister; Albert Chin; H. L. Hwang IEEE Electron Device Letters, 2007

We have studied the stress reliability of low-energy-bandgap high- metal- insulator-metal capacitors under constant voltage stress. By using a high- work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (DeltaC/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the ...


Cerium oxide based bipolar resistive switching memory with low operation voltage and high resistance ratio

Cheng-Chih Hsieh; Anupam Roy; Yao-Feng Chang; Amritesh Rai; Sanjay Banerjee 2015 73rd Annual Device Research Conference (DRC), 2015

Resistive random access memory (RRAM) is attractive as a promising candidate for next generation nonvolatile memory due to its potential scalability beyond 10 nm feature size using a crossbar structure, fast switching speed, low operating power, and good reliability. Cerium oxide has high dielectric constant and various valance states, making cerium oxide a potential material for RRAM application. Nevertheless, fundamental ...


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Educational Resources on MIM devices

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eLearning

Toothed mid-infrared metal-insulator-metal waveguides

Lasers and Electro-Optics (CLEO), 2011 Conference on, 2011

We fabricate subwavelength varying periodicity toothed metal-insulator-metal waveguides for mid-infrared frequencies. The transmission spectra of these structures for TM and TE polarized light is investigated, and our results compared to numerical simulations.


InGaAs monolithic interconnected modules (MIMs)

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE, 1997

A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications. The MIM device consists of many individual InGaAs cells series-connected on a single semi-insulating InP substrate. An infrared (IR) back surface reflector (BSR), placed on the rear surface of the substrate, returns the unused portion of the TPV radiator output spectrum back to the radiator for recuperation, ...


Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode

Electron Device Letters, IEEE, 2007

We have fabricated high-kappa TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 times 10-7 A/cm2 was obtained at 125degC for 24-fF/mum2 density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work- function Ir electrode, and large conduction band offset.


Quantum electrical characteristics of nanocapacitors

Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on, 2003

Current integrated circuit miniaturization will soon require device sizes at atomic scale. Recent work has proposed many Coulomb blockade, and tunneling devices as active devices. However, among passive components, capacitors are extremely critical circuit elements in all electronic circuits with wide range applications. In this work, we present the operational criteria that will govern the feasibility of nanocapacitors for future ...


Impact of layout and process on RF and analog performances of 3D damascene MIM capacitors

Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE, 2007

RF and analog designs require high performances MIM capacitors. In order to continue the downscaling of MIM devices, we proposed and integrated a 3D damascene MIM capacitor using Si3N4 dielectric in the copper back-end of a 0.13 mum BICMOS technology. Layout and process have been recently optimized to reach excellent reliability performances while keeping very good RF performances.


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IEEE-USA E-Books

  • On???Chip Realization of Synthesized Transmission Lines Using IPD Processes

    System???on???chip (SoC) and system???inpackage (SiP) technologies have become the core business in communication industries over the past decade. When the operating frequency goes high, one may experience difficulties in realizing synthesized transmission lines using PCB processes due to the limitation of line resolution. To alleviate the problem, the integrated passive device (IPD) process, having received considerable attention in the SiP integration, is applied to fulfill on???chip synthesized transmission lines and hence circuit miniaturization at higher frequencies. In this chapter, a variety of synthesized transmission lines using the IPD technology are introduced to realize on???chip microwave/millimeter???wave passive components. On???chip synthesized lines, generally consisting of quasi???lumped meander/spiral inductors, metal???insulator???metal (MIM) capacitors, and open stubs, feature an extremely compact size with impressive slow wave factor. The concept of multi???mode operation is also fulfilled by quasi???lumped components on the IPD substrate. Their applications to the multiplexer, antenna decoupling network, and liquid detector are also discussed.

  • Appendix A: Selected Nonsemiconductor Devices

    This appendix contains sections titled: Vacuum Tubes Superconducting Devices Inductor and Transformer Liquid-Crystal Display (LCD) Thermocouple and Thermopile Metal-Insulator-Metal (MIM) Diode Single-Electron Transistor (SET)



Standards related to MIM devices

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No standards are currently tagged "MIM devices"


Jobs related to MIM devices

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