71 resources related to MIM devices
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2016 IEEE 66th Electronic Components and Technology Conference (ECTC)
premier components, packaging and technology conference
the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart-power technologies, etc.
2015 IEEE MTT-S International Microwave Symposium (IMS2015)
The IEEE MTT-S International Microwave Symposium (IMS) is the premier conference covering basic technologies, to passives and actives components to system over a wide range of frequencies including VHF, UHF, RF, microwave, millimeter-wave, terahertz, and optical. The conference will encompass the latest in RFIC, MIC, MEMS and filter technologies, advances in CAD, modeling, EM simulation, wireless systems, RFID and related topics. The IMS includes technical sessions, both oral and interactive, worksh
2013 26th International Conference on VLSI Design: concurrently with the 12th International Conference on Embedded Systems
The conference is a forum for researchers and designers to present and discuss various aspects of VLSI design, electronic design automation (EDA), embedded systems, and enabling technologies. It covers the entire spectrum of activities in the two vital areas of very large scale integration (VLSI) and embedded systems, which underpin the semiconductor industry.
2013 IEEE International Conference on Microelectronic Test Structures (ICMTS)
This conference focuses on new developments in test structures, as well as their implementation and/or application, related to silicon, semiconductors, nanotechnology and MEMS. Suggested topics include Material and Process Characterization, Device and Circuit Modeling, Parameter Extraction, Yield Enhancement and Production Process Control and so on.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Davis, J.A.; Ganesan, K.; Alves, A.D.C.; Prokopovich, D.A.; Guatelli, S.; Petasecca, M.; Lerch, M.L.F.; Jamieson, D.N.; Rosenfeld, A.B. Nuclear Science, IEEE Transactions on, 2014
A diamond microdosimeter prototype with sensitive volumes separated through laser milled trenches is characterized. It is proposed that this design will offer a new and alternative means of creating a diamond based microdosimeter. The device has been characterized by means of ion beam induced charge collection (IBIC) measurements. In this work, it is shown that laser milled trenches have a ...
Marshalek, R.; Davidson, F.M. Quantum Electronics, IEEE Journal of, 1983
Photoinduced tunneling currents in thin-film Ni-NiO-Ni tunneling junctions were measured as a function of photon energy over the range 2.0 eV ![\leq hf \leq 2.7](/images/tex/2697.gif) eV. The photoresponse mechanism was found to be consistent with a photon assisted tunneling mechanism. Inelastic electron- electron collisions were found to strongly influence the photoassisted tunneling currents.
Gilmer, D.C.; Goel, N.; Park, H.; Park, C.; Barnett, J.; Kirsch, P.D.; Jammy, R. Memory Workshop, 2009. IMW '09. IEEE International, 2009
We demonstrate for the first time molybdenum based oxygen-bearing electrodes for improved performance in MANOS (Metal-Alumina-Nitride-Oxide) charge-trap NVM, and also MIM-DRAM type devices. The meta-stable high work- function (Wfn) molybdenum-oxynitride (MoON) electrodes result in improved retention and erase saturation for the charge trap NVM devices and improved leakage for the MIM devices. Although some of the observed improvements, compared to ...
Hazra, A.; Bhattacharyya, P. Electron Devices, IEEE Transactions on, 2014
Aligned TiO2 nanotubes (NTs), having diameter of 75 ± 10 nm and length of 280 ± 20 nm were synthesized by electrochemical anodization technique. Two types of device configurations, viz., planar/lateral and metal-insulator-metal (MIM)/vertical sensor structures were fabricated with TiO2 NTs as the sensing layer. Vertical 1-D electron transport technique of MIM configurations was found to be very effective over ...
Mukhopadhyay, S.; Bhunia, S.; Hunter, H.C.; Roy, K. Emerging and Selected Topics in Circuits and Systems, IEEE Journal on, 2014
This special issue focuses on circuit, architecture, and system aspects of computing in beyond-CMOS technologies.
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