Conferences related to Logic gates

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2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM


2018 4th International Conference on Recent Advances in Information Technology (RAIT)

4th International Conference (RAIT-201) has been conceived with multi-disciplinary areas inIT, Computers, Electronics together with application areas of Mineral, Service, Telecom sectorsthat are strategically important for the overall economic growth of our country.

  • 2016 3rd International Conference on Recent Advances in Information Technology (RAIT)

    3rd International Conference (RAIT-2016) has been conceived with multi-disciplinary areas in IT, Computers, Electronics together with application areas of Mineral, Service, Telecom sectors that are strategically important for the overall economic growth of our country.

  • 2012 1st International Conference on Recent Advances in Information Technology (RAIT)

    Over the past few decades, we are witnessing remarkable advances and explosive growth of new technologies that are changing the world very fast. Information Technology (IT) sector is indeed playing a significant role in facing the technological challenges of the 21st century. The impact of IT on every sphere of human activities is stupendous these days. This field has been playing vital role in our economical, social and rural growth. The change in Information Technology is racing by the hour.


2018 IEEE Symposium on VLSI Technology

New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2020 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2016 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2014 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices.

  • 2012 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2011 Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2010 IEEE Symposium on VLSI Technology

    New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D - system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices -

  • 2009 IEEE Symposium on VLSI Technology

    - New concepts and breakthroughs in VLSI processes and devices including Memory, Logic, I/O, and I/F (RF/Analog/MS, Imager, MEMS, etc.) - Advanced gate stack and interconnect in VLSI processes and devices - Advanced lithography and fine patternig technologies for high density VLSI - New functional devices beyond CMOS with a path for VLSI implantation - Packing of VLSI devices including 3D-system integration - Processes and devices modeling of VLSI devices - Reliability related to the above devices


2017 10th Global Symposium on Millimeter-Waves (GSMM)

The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2018 11th Global Symposium on Millimeter Waves (GSMM)

    The main theme of the GSMM2018 is Millimeter-wave Propagation: Hardware, Measurements and Systems. It covers millimeter-wave and THz devices, circuits, systems, and applications, with a special focus on mmWave propagation. The conference will include keynote talks, technical sessions, panels, and exhibitions on the listed topics.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)

IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequency circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, device modeling, and embedded portable devices.

  • 2016 14th IEEE International New Circuits and Systems Conference (NEWCAS)

    IEEE International NEWCAS Conference is tailored to reflect the wide spectrum of topics and research interests shared among the organizing entities. This collaboration will be oriented towards advanced research and development activities from academia, research institutions, and industry. Topics include, but are not limited to analog, mixed-signal, and digital integrated circuits and systems, radio-frequqncy circuits, computer architecture and memories, microsystems, sensors and actuators, test and verification, telecommunication, technology trends, power and energy circuits and systems, biomedical circuits, energy harvesting, computer-aided design tools, and embedded portable devices.

  • 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS)

    The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared among the organizing entities. This collaboration will be oriented towards advanced research in adaptive systems which constitutes the highlights of the NEWCAS conference, but also areas related to analog and digital signal processing, low power consumption, and circuits and systems designs. The topics include, but are not limited to: Computer architecture and memories, Analog circuit design, Digital and mixed-signal circuit design, RF circuit design, Microsystems, sensors and actuators, Test and verification, Telecom, microwaves and RF, Technology Trends, Data and signal processing, Neural networks and artificial vision, CAD and design tools, Low-Power circ. & syst. techniques, Imaging & image sensors, Embedded hand-held devices, Biomed. circuits & systems, Energy Harvesting / Scavenging

  • 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)

    will encompass a wide range of special sessions and keynote talks given by prominent experts covering key areas of research in microsystems in order to provide all attendees a unique forum for the exchange of ideas and results. The program of the conference will be tailored to reflect the wide spectrum of topics and research interest shared by researchers in this field.

  • 2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2011 IEEE 9th International New Circuits and Systems Conference (NEWCAS)

    NEWCAS is a major international conference presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. The NEWCAS conference deals with analog and digital signal processing, low power consumption, circuits and systems design.

  • 2010 8th IEEE International NEWCAS Conference (NEWCAS)

    The conference will include regular and special session on emerging electronic systems and design methods, plenary sessions on selected advanced aspects of the theory, design and applications of electronic systems, as well as tutorials given by experts on specific topics.

  • 2009 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2009)

    Advance in microelectronics in addition to signal analog processing, and their applications to telecommunications, artificial vision and biomedical. This include: system architectures, circuit (digital, analog and mixed) and system-level design, test and verification, data and signal processing, microsystems, memories and sensors and associated analog processing, mathematical methods and design tools.

  • 2008 Joint IEEE North-East Workshop on Circuits and Systems (NEWCAS) and TAISA Conference (NEWCAS-TAISA 2008)

    Advanced research in microelectronics and microsystems constitutes the highlights of the NEWCAS conferences in addition to topics regarding analog data and signal processing and their applications well-established in the TAISA conferences.

  • 2006 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2006)

  • 2005 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2005)

  • 2004 IEEE North-East Workshop on Circuits and Systems (NEWCAS 2004)


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Periodicals related to Logic gates

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Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Magazine, IEEE

IEEE Communications Magazine was the number three most-cited journal in telecommunications and the number eighteen cited journal in electrical and electronics engineering in 2004, according to the annual Journal Citation Report (2004 edition) published by the Institute for Scientific Information. Read more at http://www.ieee.org/products/citations.html. This magazine covers all areas of communications such as lightwave telecommunications, high-speed data communications, personal communications ...


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Most published Xplore authors for Logic gates

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Xplore Articles related to Logic gates

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Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


Research on QDFET Using for Single Photon Detection

HongPei Wang; GuangLong Wang; FengQi Gao; Peng Qiu; JianHui Chen; JiangLei Lu 2012 International Conference on Computer Science and Electronics Engineering, 2012

As an new pattern single photon detector, quantum-dot based single photon detector have good performance potential. In this paper, we first introduce the mechanism of photo-conductive gain of quantum-dot field effect transistor(QDFET), which is more suitable for quantum telecommunications compared to traditional mechanism. Then, QDFET in the form of a quantum point contact is mainly discussed, including its sensitivity and ...


A TSV test structure for simultaneously detecting resistive open and bridge defects in 3D-ICs

Young-woo Lee; Junghwan Kim; Inhyuk Choi; Sungho Kang 2016 International SoC Design Conference (ISOCC), 2016

After the 3D stacking process, TSV-based 3D-ICs are required to perform the post-bond testing in order to detect TSV faults or device functional defects. To detect the resistive open and bridge defects, various effective TSV testing techniques have been studied. At an early stage of TSV manufacturing, it is important to consider that the TSV testing is required not only ...


RF characteristics and mobility performance of a 30nm Gate length E-mode Junctionless Nanowire transistor

D. Sahoo; T. R. Lenka 2014 International Conference on Electronics and Communication Systems (ICECS), 2014

Junctionless Nanowire transistors are considered in the family of next generation high performance device group because of their simplicity in fabrication and very good scalable properties they provide. In this paper we report a 30nm Gate length non planar, ultra thin JNT for high frequency, high speed applications. We analyze the high frequency Microwave performance of the proposed device by ...


Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN HEMTs

A. Khachatrian; N. J. -H. Roche; S. P. Buchner; A. D. Koehler; T. J. Anderson; K. D. Hobart; D. McMorrow; S. D. LaLumondiere; N. P. Wells; J. Bonsall; E. C. Dillingham; P. Karuza; D. L. Brewe; W. T. Lotshaw; S. C. Moss; V. Ferlet-Cavrois; M. Muschitiello IEEE Transactions on Nuclear Science, 2017

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al0.3Ga0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton- irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected ...


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Educational Resources on Logic gates

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eLearning

Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


Research on QDFET Using for Single Photon Detection

HongPei Wang; GuangLong Wang; FengQi Gao; Peng Qiu; JianHui Chen; JiangLei Lu 2012 International Conference on Computer Science and Electronics Engineering, 2012

As an new pattern single photon detector, quantum-dot based single photon detector have good performance potential. In this paper, we first introduce the mechanism of photo-conductive gain of quantum-dot field effect transistor(QDFET), which is more suitable for quantum telecommunications compared to traditional mechanism. Then, QDFET in the form of a quantum point contact is mainly discussed, including its sensitivity and ...


A TSV test structure for simultaneously detecting resistive open and bridge defects in 3D-ICs

Young-woo Lee; Junghwan Kim; Inhyuk Choi; Sungho Kang 2016 International SoC Design Conference (ISOCC), 2016

After the 3D stacking process, TSV-based 3D-ICs are required to perform the post-bond testing in order to detect TSV faults or device functional defects. To detect the resistive open and bridge defects, various effective TSV testing techniques have been studied. At an early stage of TSV manufacturing, it is important to consider that the TSV testing is required not only ...


RF characteristics and mobility performance of a 30nm Gate length E-mode Junctionless Nanowire transistor

D. Sahoo; T. R. Lenka 2014 International Conference on Electronics and Communication Systems (ICECS), 2014

Junctionless Nanowire transistors are considered in the family of next generation high performance device group because of their simplicity in fabrication and very good scalable properties they provide. In this paper we report a 30nm Gate length non planar, ultra thin JNT for high frequency, high speed applications. We analyze the high frequency Microwave performance of the proposed device by ...


Application of a Focused, Pulsed X-Ray Beam to the Investigation of Single-Event Transients in Al<sub>0.3</sub>Ga<sub>0.7</sub>N/GaN HEMTs

A. Khachatrian; N. J. -H. Roche; S. P. Buchner; A. D. Koehler; T. J. Anderson; K. D. Hobart; D. McMorrow; S. D. LaLumondiere; N. P. Wells; J. Bonsall; E. C. Dillingham; P. Karuza; D. L. Brewe; W. T. Lotshaw; S. C. Moss; V. Ferlet-Cavrois; M. Muschitiello IEEE Transactions on Nuclear Science, 2017

A focused, pulsed x-ray beam was used to compare SET characteristics in pristine and proton-irradiated Al0.3Ga0.7N/GaN HEMTs. Measured SET amplitudes and trailing-edge decay times were analyzed as was the collected charge, obtained by integrating the SET pulses over time. SETs generated in proton- irradiated HEMTs differed significantly from those in pristine HEMTs with regard to the decay times and collected ...


More eLearning Resources

IEEE-USA E-Books

  • Circuit&#x2010;Switched Domain&#x2014;Architecture and Protocols

    This chapter contains sections titled: Architecture Protocols Summary

  • Subcircuit Models of SOI Lubistors for Electrostatic Discharge Protection Circuit Design and Their Applications

    This chapter proposes equivalent circuit models of SOI Lubistors for circuit simulations. Fundamental device models are investigated using a device simulator. The proposed equivalent circuit models of the devices utilize standard SPICE circuit elements. Equivalent circuit models are used to evaluate the performance of an electrostatic discharge (ESD) protection circuit. It is shown that the SOI Lubistors have sufficient performance to act as ESD protection devices. By combining circuit simulations and device simulations, the high-current characteristics of SOI Lubistors are also addressed and a couple of issues are raised with regard to the further development of these circuits. [Reprinted from _Solid-State Electronics_, vol. 47, S. Wakita and Y. Omura, Sub-circuit models of silicon-on-insulator insulated-gate pn-junction devices for electrostatic discharge protection circuit design and their applications, pp. 1943-1952, Copyright 2003, with permission from Elsevier.]

  • Prospects of Future Si Technologies in the Data¿¿¿Driven World

    The huge amount of information has a great impact on our daily lives, which can be filled with comfort, convenience, and safety by using and analyzing the so¿¿¿called big data. It is noteworthy that we can store, share, and utilize the huge amount of data with the aid of silicon (Si) technology; the novel Si technologies will be deployed to continuously enrich the data¿¿¿driven world of the future. This chapter reviews the evolution and prospects for the future Si technologies. The Si¿¿¿based memory and logic technologies have been successfully scaled down to 1X nm node. From the device point of view, all of the Si devices face no fundamental physical limitations down to sub¿¿¿10nm nodes. Practically, fabrication cost and manufacturability are of increasing concern. Patterning difficulties, as well as tight overlay and uniformity tolerances, will increase fabrication costs. Along with individual technology evolution, the convergence of various technologies will generate new areas of functional diversification.

  • A New Basic Element for Neural Logic Functions and Capability in Circuit Applications

    This chapter describes a new basic element that shows a synaptic operation for neural logic applications and shows function feasibility. A key device for the logic operation is the Lubistor on SOI substrates. The basic element allows an interface quite compatible to that of conventional CMOS circuits and ?>MOS circuits. [¿¿ 1999 IEEE. Reprinted, with permission, from Y. Omura, Neuron firing operations by a new basic logic element, _IEEE Electron Device Letters_, vol. 20, pp. 226-228, 1999. Copyright 2002. The Institute of Electronics Engineers of Korea. Y. Omura, A new basic element for neural logic functions and capability in circuit applications, _Journal of Semiconductor Technology and Science_, vol. 2, pp. 70-81, 2002.]

  • TUTWSN API

    This chapter contains sections titled: Design of TUTWSN API TUTWSN API Implementation TUTWSN API Evaluation

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    This chapter contains sections titled: Introduction Network Attacks and Security Issues Protection and Prevention Detection Assessment and Response Questions Problems Projects

  • Recent Developments and Future Directions

    This chapter contains sections titled: * Introduction * Qubit Implementations * Quantum CPUs * Quantum Memories * Further Reading

  • Architecture of Virtual Roaming Systems

    This chapter contains sections titled: SCCP, MAP, CAP and GTP Transformation Principle in the Roaming Hub Procedures for the Virtual Roaming Visitors' Service (Single IMSI) Restriction of Virtual Roaming by the Roaming Hub Procedures for the Virtual Roaming Visitors' Service (Multi‐IMSI) IS 41 ↔ MAP GSM Inter‐standard Roaming Hubs Various MAP and CAMEL Transformation Methods Appendix of Chapter 2 References and Further Reading

  • Fundamentals of Electronic Power Conversion

    This chapter aims to give sufficient knowledge of how electric power is converted using electronic power converters, in order to facilitate the study of electric drives. Furthermore, it presents how inverters operate to allow power to be fed into grids from low power power plants such as small photovoltaic generators. A concise description of the behaviour of the devices, as well as an introduction to approximations in such a way that they can be analysed using the linear circuit concepts. Rectifiers are devices that convert AC power into DC without affecting (if we disregard inner power losses) the transferred power. This concept is illustrated, showing single- phase and three-phase rectifiers.

  • IP Multimedia Subsystem&#x2014;Architecture and Protocols

    This chapter contains sections titled: IMS Service Support Architecture Protocols Summary



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