Endurance

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Endurance (also called sufferance) is the ability for an animal to exert itself for a long period of time. In humans, it is usually used in aerobic or anaerobic exercise. The definition of 'long' varies according to the type of exertion - minutes for high intensity anaerobic exercise, hours or days for low intensity aerobic exercise. (Wikipedia.org)






Conferences related to Endurance

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2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 17th IEEE International Conference On Trust, Security And Privacy In Computing And Communications/ 12th IEEE International Conference On Big Data Science And Engineering (TrustCom/BigDataSE)

The conference aims at bringing together researchers and practitioners in the world working on trusted computing and communications, with regard to trust, security, privacy, reliability, dependability, survivability, availability, and fault tolerance aspects of computer systems and networks, and providing a forum to present and discuss emerging ideas and trends in this highly challenging research field


2018 Annual Reliability and Maintainability Symposium (RAMS)

Scope:Tutorials and original papers on reliability, maintainability, safety, risk management, and logistics


2018 Chinese Control And Decision Conference (CCDC)

Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2017 29th Chinese Control And Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2016 Chinese Control and Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create aforum for scientists, engineers and practitioners throughout the world to present the latestadvancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2015 27th Chinese Control and Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2014 26th Chinese Control And Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create aforum for scientists, engineers and practitioners throughout the world to present the latestadvancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2013 25th Chinese Control and Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2012 24th Chinese Control and Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2011 23rd Chinese Control and Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2010 Chinese Control and Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies

  • 2009 Chinese Control and Decision Conference (CCDC)

    Chinese Control and Decision Conference is an annual international conference to create a forum for scientists, engineers and practitioners throughout the world to present the latest advancement in Control, Decision, Automation, Robotics and Emerging Technologies.

  • 2008 Chinese Control and Decision Conference (CCDC)


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Periodicals related to Endurance

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


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Xplore Articles related to Endurance

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The effects of asymmetry repetitive square wave voltages on PD statistics and endurance

[{u'author_order': 1, u'affiliation': u'School of Electrical Engineering and Information, Sichuan University, Chengdu, China', u'full_name': u'Peng Wang'}, {u'author_order': 2, u'affiliation': u'School of Electrical Engineering and Information, Sichuan University, Chengdu, China', u'full_name': u'Hongying Xu'}, {u'author_order': 3, u'affiliation': u'School of Electrical Engineering and Information, Sichuan University, Chengdu, China', u'full_name': u'Jian Wang'}, {u'author_order': 4, u'affiliation': u'LIT/DIE, University of Bologna, Italy', u'full_name': u'Andrea Cavallini'}, {u'author_order': 5, u'affiliation': u'LIT/DIE, University of Bologna, Italy', u'full_name': u'Gian Carlo Montanari'}] 2016 IEEE International Conference on Dielectrics (ICD), 2016

Repetitive square wave voltages should be used to perform partial discharge inception voltage and endurance (lifetime) tests on insulation systems of rotating machines fed by power electronics in qualification and type tests according to new published International Electrotechnical Commission (IEC). To obtain objective test results, the influence of waveform parameters on partial discharge (PD) and endurance results should be carefully ...


Endurance-based Dynamic V<inf>TH</inf>Distribution Shaping of 3D-TLC NAND Flash Memories to Suppress Both Lateral Charge Migration and Vertical Charge De-trap and Increase Data-retention Time by 2.7x

[{u'author_order': 1, u'affiliation': u'Department of Electrical, Electronic and Communication Engineering, Chuo University, Tokyo, Japan', u'full_name': u'Shun Suzuki'}, {u'author_order': 2, u'affiliation': u'Department of Electrical, Electronic and Communication Engineering, Chuo University, Tokyo, Japan', u'full_name': u'Yoshiaki Deguchi'}, {u'author_order': 3, u'affiliation': u'Department of Electrical, Electronic and Communication Engineering, Chuo University, Tokyo, Japan', u'full_name': u'Toshiki Nakamura'}, {u'author_order': 4, u'affiliation': u'Department of Electrical, Electronic and Communication Engineering, Chuo University, Tokyo, Japan', u'full_name': u'Ken Takeuchi'}] 2018 48th European Solid-State Device Research Conference (ESSDERC), 2018

Lateral charge migration and vertical charge detrap degrade the reliability of 3D-Triple-Level Cell (TLC) NAND flash. Lateral charge migration is dominant at the low write/erase (W/E) endurance and vertical charge de-trap is dominant at the high endurance. Conventional techniques address only one of these problems. This paper proposes Endurance-based Dynamic VTHDistribution Shaping (DVDS) to suppress both errors at a wide ...


The influence of repetitive square wave voltage duty cycle on partial discharge statistics and insulation endurance

[{u'author_order': 1, u'affiliation': u'School of Electrical Engineering and Information, Sichuan University, Chengdu, China', u'full_name': u'Peng Wang'}, {u'author_order': 2, u'affiliation': u'School of Electrical Engineering and Information, Sichuan University, Chengdu, China', u'full_name': u'Hongying Xu'}, {u'author_order': 3, u'affiliation': u'School of Electrical Engineering and Information, Sichuan University, Chengdu, China', u'full_name': u'Jian Wang'}, {u'author_order': 4, u'affiliation': u'LIT/DIE, University of Bologna, Italy', u'full_name': u'Andrea Cavallini'}] 2016 International Conference on Condition Monitoring and Diagnosis (CMD), 2016

The influence of voltage duty cycle on partial discharge (PD) characteristics and endurance of inverter-fed motor insulation were investigated through tests performed on single-contact crossed enameled wires under bipolar repetitive square wave voltages with different duty cycles. The PD patterns, amplitude, repetition rate and lifetime obtained show that short duty cycles, i.e., lower than 50 μs, at 10 kHz frequency, ...


Maximal aerobic power in endurance trained and sedentary men and women, 10–74 years of age

[{u'author_order': 1, u'affiliation': u'School of Health and Public Safety, SAIT Polytechnic, Calgary, Canada', u'full_name': u'Terrance Malkinson'}] 2009 IEEE Toronto International Conference Science and Technology for Humanity (TIC-STH), 2009

Participation in endurance athletic activities such as running, swimming, and cycling is increasing by people of all ages. It is not unusual for very young and elderly male and female enthusiasts to train for and participate in, short and long distance endurance athletics. The primary purpose of this study was to examine changes in maximal aerobic power (VO2max) in aerobically ...


Changes of HD-sEMG maps of the upper limb during isometric endurance contractions

[{u'author_order': 1, u'affiliation': u'Biomedical Research Networking Center in Bioengineering, Biomaterials and Nanomedicine (CIBER-BBN), Spain; and the Automatic Control Department (ESAII), Biomedical Engineering Research Centre (CREB), Universitat Polit\xe8cnica de Catalunya (UPC), Barcelona, Spain', u'full_name': u'M. Rojas-Mart\xednez'}, {u'author_order': 2, u'affiliation': u'ESAII Department, the CREB, the Barcelona College of Industrial Engineering (EUETIB), Universitat Polit\xe8cnica de Catalunya (UPC), Barcelona, Spain', u'full_name': u'M. A. Ma\xf1anas'}] 2014 36th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2014

Recent research in the field of surface EMG recorded with 2D electrode arrays have shown muscle adaptations as reflected on the spatial activation of motor units in response to pain, direction of movement or fatigue. The purpose of this study was to evaluate time- changes in the activation maps of upper limb muscles during endurance tasks associated with the degrees ...


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Educational Resources on Endurance

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eLearning

No eLearning Articles are currently tagged "Endurance"

IEEE-USA E-Books

  • Resistive Random Access Memory (RRAM)

    RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.

  • Toeplitz and Circulant Matrices: A Review

    Toeplitz and Circulant Matrices: A review derives in a tutorial manner the fundamental theorems on the asymptotic behavior of eigenvalues, inverses, and products of banded Toeplitz matrices and Toeplitz matrices with absolutely summable elements. Mathematical elegance and generality are sacrificed for conceptual simplicity and insight in the hope of making these results available to engineers lacking either the background or endurance to attack the mathematical literature on the subject. By limiting the generality of the matrices considered, the essential ideas and results can be conveyed in a more intuitive manner without the mathematical machinery required for the most general cases. As an application the results are applied to the study of the covariance matrices and their factors of linear models of discrete time random processes. Toeplitz and Circulant Matrices: A review is written for students and practicing engineers in an accessible manner bringing this important topic to a wider audience.

  • Non-Boolean Computing with Spintronic Devices

    One of the most promising emerging non-volatile memories is magnetic tunnel junction (MTJ); this is a Spintronic element where electronic charge and spin are both used for storing and manipulating digital information. Indeed, many companies have proposed this as a universal memory targeting embedded RAM, DRAM, and storage class memory domains primarily due to features like non- volatility, ultra-low power consumption, high endurance, rad-hardness, etc. However, the increasingly popular data-centric approach for solving non- Boolean problems, often called in memory computing, may also benefit by exploiting this kind of device. Non-Boolean Computing with Spintronic Devices explores the latest research areas that employ spintronic devices for non- Boolean computing purposes. Due to the physical limits of traditional computing frameworks, researchers have focused on unconventional solving paradigms like neural networks, associative memory, neuromorphic computing, etc. This monograph also illustrates a novel mechanism to solve computationally expensive binary quadratic optimization problems via an energy minimization framework of nanomagnets. This hardware platform opens the possibility of achieving energy efficient processors such as the Ising model and Bayesian inference co-processor. However, the technology readiness level of spintronic devices is still maturing, so the research on the computing frameworks based on these devices is not static, rather dynamic. This monograph surveys the research to date and is an ideal reference for anyone interested in how the field is developing.



Standards related to Endurance

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IEEE Recommended Practice for Voltage-Endurance Testing of Enameled Wire


IEEE Standard Test Procedure for Evaluation of Systems of Insulation for Dry-Type Specialty and General-Purpose Transformers

To establish a uniform method for preparing samples, conducting tests, and analyzing results for establishing a comparative thermal life of insulation systems intended for use in dry-type transformers described in NEMA St 1-1988 and NEMA st 20-1992.


Standard for AC High-Voltage Circuit Breakers Rated on a Symmetrical Current Basis - Preferred Ratings and Related Required Capabilities for Voltages above 1000 Volts

This standard applies to all indoor and outdoor types of AC high-voltage circuit breakers rated above 1000 volts and rated on a symmetrical current basis.



Jobs related to Endurance

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