Lanthanum

View this topic in
Lanthanum is a chemical element with the symbol La and atomic number 57. (Wikipedia.org)






Conferences related to Lanthanum

Back to Top

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 IEEE 28th Symposium on Fusion Engineering (SOFE)

fusion engineering, physics and materials, plasma heating, vacuum technology, tritium processing, fueling, first walls, blankets and divertors


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


More Conferences

Periodicals related to Lanthanum

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


More Periodicals

Most published Xplore authors for Lanthanum

Back to Top

Xplore Articles related to Lanthanum

Back to Top

Production Cross Sections for (n,t) Reactions in Some Medium and Heavy Mass Nuclei at 14.6 MeV

[{u'author_order': 1, u'affiliation': u'Southern Methodist University Dallas, Texas', u'full_name': u'T. W. Woo'}, {u'author_order': 2, u'affiliation': u'Southern Methodist University Dallas, Texas', u'full_name': u'G. N. Salaita'}] IEEE Transactions on Nuclear Science, 1979

The cross section for (n, t) reaction of 14.6 MeV neutrons with isotopes of the natural elements calcium, iron, yittrium, and lanthanum, and with enriched isotopes strontium-86, calcium-114, tellurium-130, and thallium-205 were measured by the activation technique using high-energy resolution gamma-ray spectrometry. The experimentally determined values of the cross sections are in good agreement with values calculated by an empirical ...


Investigation of LaBr/sub 3/ detector timing resolution

[{u'author_order': 1, u'affiliation': u'Dept. of Radiol., Pennsylvania Univ., Philadelphia, PA, USA', u'full_name': u'A. Kuhn'}, {u'author_order': 2, u'affiliation': u'Dept. of Radiol., Pennsylvania Univ., Philadelphia, PA, USA', u'full_name': u'S. Surti'}, {u'author_order': 3, u'full_name': u'K.S. Shah'}, {u'author_order': 4, u'full_name': u'J.S. Karp'}] IEEE Nuclear Science Symposium Conference Record, 2005, 2005

Lanthanum bromide (LaBr/sub 3/) scintillation detectors are currently being developed for use in time-of-flight (TOF) PET. In recent years, studies have been aimed at the parameterization of the LaBr/sub 3/ scintillation properties. We have utilized the findings of these studies in the development of simulation tools to investigate and predict the performance of TOF PET detectors of realistic geometries. Here, ...


Theoretical investigations of temperature-compensated cuts for vibrating beam LGT resonators

[{u'author_order': 1, u'affiliation': u'FEMTO-ST Institute, UMR CNRS 6174, ENSMM, Besan\xe7on, France. fsthal@ens2m.fr', u'full_name': u'F. Sthal'}, {u'author_order': 2, u'affiliation': u'FEMTO-ST Institute, UMR CNRS 6174, ENSMM, Besan\xe7on, France', u'full_name': u'E. Bigler'}, {u'author_order': 3, u'affiliation': u'FEMTO-ST Institute, UMR CNRS 6174, ENSMM, Besan\xe7on, France', u'full_name': u'R. Bourquin'}] 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, 2007

In this paper, the possibility of temperature-compensated cuts for different kinds of vibrations in Langatate resonators is investigated. Theoretical investigations of vibrating beam resonators with a rectangular cross-section in extensional, flexural and torsional modes are given.


Microstructure control in the growth of large area Tl-2212 thin films

[{u'author_order': 1, u'affiliation': u'Dept. of Mater., Univ. of Oxford, UK', u'full_name': u'Houzheng Wu'}, {u'author_order': 2, u'affiliation': u'Dept. of Mater., Univ. of Oxford, UK', u'full_name': u'S.C. Speller'}, {u'author_order': 3, u'full_name': u'S. Pal'}, {u'author_order': 4, u'full_name': u'D.J. Edwards'}, {u'author_order': 5, u'full_name': u'C.R.M. Grovenor'}] IEEE Transactions on Applied Superconductivity, 2003

Large area high temperature superconducting thin films are needed for the implementation of a range of passive microwave devices. We have been investigating the critical processing issues that control the surface resistance values in 2 inch films grown on lanthanum aluminate substrates, including the possibility of batch processing wafers in a vertical geometry. We have shown that the microstructure of ...


Diode-laser pumped erbium-doped fluorozirconate fibre amplifier for the 1530 nm communications window

[{u'author_order': 1, u'affiliation': u'British Telecom Res. Lab., Ipswich, UK', u'full_name': u'C.A. Millar'}, {u'author_order': 2, u'affiliation': u'British Telecom Res. Lab., Ipswich, UK', u'full_name': u'P.W. France'}] Electronics Letters, 1990

An erbium-doped fluorozirconate fibre amplifier has been pumped at 1480 nm using a semiconductor diode laser. The small signal gain was 15 dB for 25 mW launched pump power. The ASE bandwidth was 45 nm and the predicted noise figure was 5 dB.<<ETX>>


More Xplore Articles

Educational Resources on Lanthanum

Back to Top

eLearning

No eLearning Articles are currently tagged "Lanthanum"

IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Lanthanum"

IEEE-USA E-Books

No IEEE-USA E-Books are currently tagged "Lanthanum"



Standards related to Lanthanum

Back to Top

No standards are currently tagged "Lanthanum"


Jobs related to Lanthanum

Back to Top