Lanthanum

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Lanthanum is a chemical element with the symbol La and atomic number 57. (Wikipedia.org)






Conferences related to Lanthanum

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2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 IEEE 28th Symposium on Fusion Engineering (SOFE)

fusion engineering, physics and materials, plasma heating, vacuum technology, tritium processing, fueling, first walls, blankets and divertors


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


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Periodicals related to Lanthanum

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Lanthanum

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Xplore Articles related to Lanthanum

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Characterization of sol-gel derived PZT and PLZT thin films

[{u'author_order': 1, u'affiliation': u'Div. of Ceramics, Leeds Univ., UK', u'full_name': u'R. Kurchania'}, {u'author_order': 2, u'full_name': u'S. J. Milne'}] Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on, None

Lead zirconate titanate (PZT) and lead lanthanum zirconate titanate (PLZT) precursor sols were prepared using a diol based sol-gel route. Thin films were deposited by spin coating onto PtrTi/SiO2 /Si substrates. The effects of lanthanum incorporating up to 10 mol% lanthanum to the base PZT 53/47 composition, and the effects of firing temperature (500-700°C) on crystallization, microstructure, ferroelectric and dielectric ...


Nonlinear optical properties of K<sub>2</sub>La(NO<sub>3</sub>)<sub>5</sub>.2H<sub>2</sub>O and K<sub>2 </sub>Ce(NO<sub>3</sub>)<sub>5</sub>.2H<sub>2</sub>O

[{u'author_order': 1, u'affiliation': u'Lawrence Livermore Nat. Lab., CA, USA', u'full_name': u'C. A. Ebbers'}, {u'author_order': 2, u'affiliation': u'Lawrence Livermore Nat. Lab., CA, USA', u'full_name': u'L. D. DeLoach'}, {u'author_order': 3, u'affiliation': u'Lawrence Livermore Nat. Lab., CA, USA', u'full_name': u'M. Webb'}, {u'author_order': 4, u'affiliation': u'Lawrence Livermore Nat. Lab., CA, USA', u'full_name': u'D. Eimerl'}, {u'author_order': 5, u'affiliation': u'Lawrence Livermore Nat. Lab., CA, USA', u'full_name': u'S. P. Velsko'}, {u'author_order': 6, u'full_name': u'D. A. Keszler'}] IEEE Journal of Quantum Electronics, 1993

The harmonic generating properties of potassium lanthanum nitrate (KLN) and potassium cerium nitrate (KCN) are described. These crystals have much larger nonlinear coefficients than potassium dihydrogen phosphate (KDP) and are nearly noncritically phase matched at room temperature for Type I frequency doubling of 1.064-μm light, and for Type II doubling of light near 0.95 μm. Thus, these crystals are useful ...


Thin-film decoupling capacitors for multi-chip modules

[{u'author_order': 1, u'affiliation': u'Sandia Nat. Labs., Albuquerque, NM, USA', u'full_name': u'D. Dimos'}, {u'author_order': 2, u'affiliation': u'Sandia Nat. Labs., Albuquerque, NM, USA', u'full_name': u'S. J. Lockwood'}, {u'author_order': 3, u'affiliation': u'Sandia Nat. Labs., Albuquerque, NM, USA', u'full_name': u'R. W. Schwartz'}, {u'author_order': 4, u'affiliation': u'Sandia Nat. Labs., Albuquerque, NM, USA', u'full_name': u'M. S. Rodgers'}] 1994 Proceedings. 44th Electronic Components and Technology Conference, None

Thin-film decoupling capacitors based on ferroelectric lead lanthanum zirconate titanate (PLZT) films are being developed for use in advanced packages, such as multi-chip modules. These thin-film decoupling capacitors are intended to replace multi-layer ceramic capacitors for certain applications, since they can be more fully integrated into the packaging architecture. The increased integration that can be achieved should lead to decreased ...


Preparation of Doped Nano-TiO2 by Sol-Gel Method and the study on Its Photocatalytic Performance

[{u'author_order': 1, u'affiliation': u"Dept.of Geol. & Environ. Eng., Xi'an Univ. of Sci. & Technol., Xi'an, China", u'full_name': u'Hong-bin Yang'}, {u'author_order': 2, u'affiliation': u"Coll. of Environ. Sci. & Eng., Chang'an Univ., Xi'an, China", u'full_name': u'Wen ke Wang'}, {u'author_order': 3, u'affiliation': u"Dept.of Geol. & Environ. Eng., Xi'an Univ. of Sci. & Technol., Xi'an, China", u'full_name': u'Xiu-yan Jing'}, {u'author_order': 4, u'affiliation': u"Coll. of Environ. Sci. & Eng., Chang'an Univ., Xi'an, China", u'full_name': u'Sheng-ke Yang'}] 2010 4th International Conference on Bioinformatics and Biomedical Engineering, None

The paper produces Nano-TiO2 doped with Fe3+, Ce3+, Cu2+, Ce3+ and La3+ using sol-gel method, examines the effects of their preparation condition on catalyst performance, and then explores the influence of the adding amount of metal ions and different ions combinations on photocatalytic activity of modified Nano-TiO2. The result indicates the optimum condition for preparing doped Nano-TiO2 adopting sol-gel method ...


Formation of Lead Lanthanum Zirconate Titanate Films by Heat Treatments

[{u'author_order': 1, u'affiliation': u'Sch. of Electr. & Comput. Eng., R. Melbourne Inst. of Technol., Vic.', u'full_name': u'A. S. Holland'}, {u'author_order': 2, u'affiliation': u'Sch. of Electr. & Comput. Eng., R. Melbourne Inst. of Technol., Vic.', u'full_name': u'S. Kandasamy'}, {u'author_order': 3, u'affiliation': u'Sch. of Electr. & Comput. Eng., R. Melbourne Inst. of Technol., Vic.', u'full_name': u'E. Fardin'}, {u'author_order': 4, u'affiliation': u'Sch. of Electr. & Comput. Eng., R. Melbourne Inst. of Technol., Vic.', u'full_name': u'A. Mitchell'}, {u'author_order': 5, u'affiliation': u'Sch. of Electr. & Comput. Eng., R. Melbourne Inst. of Technol., Vic.', u'full_name': u'D. McCulloch'}] Conference on Optoelectronic and Microelectronic Materials and Devices, 2004., None

Lead lanthanum zirconate titanate (PLZT) also called lanthanum doped PZT films were deposited by RF magnetron sputtering. PLZT in the perovskite phase is required to obtain a film with a large electro-optic effect. It can also be used as a ferroelectric and piezoelectric material. However films that have not been heat treated either during or after deposition are typically in ...


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