Ionizing radiation

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Ionizing (or ionising) radiation consists of particles or electromagnetic waves that are energetic enough to detach electrons from atoms or molecules, therefore ionizing them. (Wikipedia.org)






Conferences related to Ionizing radiation

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2018 IEEE-NPSS Real Time Conference (RT)

Real time computing applications involving both hardware and software development in nuclear, particle, plasma and other related fields.


2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS international conference is held once a year in Europe, covering the latest progress in the field of radiation effects on electronics, optoelectronics devices and systems and their behaviou and reliability under ionizing high energy radiation. This conference aims at bringing together scientists and industry from space, aviation, ground applications and accelerators and at the same time industrial exhibitors, together initiating contracts, collaborations and paving the way to tomorrow’s requirements. This year’s conference is organized by CERN (European Laboratory for Nuclear Research). The first day of the conference will be covered by a short course entitled “From Space, To Ground and Below”, to introduce how to deal with radiation effects within different environments such as Space, Avionic, Ground Level and Particle accelerators. The technical program will then feature oral and poster technical sessions, a data workshop and an industrial exhibition.


2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology. The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems, Fabrication and Packaging, Mechanical and Physical Sensors, Materials and Characterization, Design, Simulation and Theory, Actuators, Optical MEMS, RF MEMS, Nanotechnology, Energy and Power


2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS)

The 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS) will be held in Batumi, Georgia on December 5-8, 2017. As the flagship conference of IEEE Circuits and Systems Society in Region 8 of IEEE (Europe, Middle East, and Africa), ICECS 2017 will consist of tutorials, plenary lectures, regular, special and poster sessions focusing on recent trends, emerging technologies and advances in all aspects of:¿ Circuits ¿ Systems ¿ Signals ¿ Mathematical Methods ¿ Computational Methods ¿ Applications


2017 39th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The 39th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC’17) in conjunction with International Biomedical Engineering Conference of KOSOMBE will be held at International Convention Center (ICC), Jeju Island, Korea from July 11 to 15, 2017. The overall theme of the conference is “Smarter Technology for Healthier World” and will cover diverse topics of cutting-edge research in biomedical engineering, healthcare technology R&D, translational clinical research, technology transfer and entrepreneurship, and biomedical engineering education. The conference program will feature high-profile keynote lectures, minisymposia, workshops, invited sessions, oral and poster sessions, sessions for students and young professions, sessions for clinicians and entrepreneurs, and exhibitions.


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Periodicals related to Ionizing radiation

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Industry Applications, IEEE Transactions on

The development and application of electric systems, apparatus, devices, and controls to the processes and equipment of industry and commerce; the promotion of safe, reliable, and economic installations; the encouragement of energy conservation; the creation of voluntary engineering standards and recommended practices.


Lightwave Technology, Journal of

All aspects of optical guided-wave science, technology, and engineering in the areas of fiber and cable technologies; active and passive guided-wave componentry (light sources, detectors, repeaters, switches, fiber sensors, etc.); integrated optics and optoelectronics; systems and subsystems; new applications; and unique field trials.


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Xplore Articles related to Ionizing radiation

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Radiation hard charge-coupled device operating at 77 ° K using nitride/oxide gate insulators

N. Bluzer; M. C. Peckerar; J. B. Schneider; R. Fulton 1979 International Electron Devices Meeting, 1979

Radiation hard charge coupled devices have been fabricated which successfully continued to operate at cryogenic temperature (77°K) after having been exposed to ionizing radiation at this temperature. No thermal annealing was performed between the time of Co60γ irradiation and the electrical measurements. These devices were p-type buried channel CCD's with a coplanar polysilicon gate structure. The gate dielectric structure consisted ...


Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques

N. S. Saks; M. G. Ancona IEEE Transactions on Nuclear Science, 1987

Generation of fast interface states D11 by ionizing radiation has been measured in MOS transistors at 80K and 295K using charge pumping and subthreshold slope techniques. Using charge pumping, the more sensitive and reliable technique, we find that D11 are not formed by radiation at 80K. In contrast, subthreshold slope measurements appear to show an increase in D11 in MOSFETs ...


Channel and Substrate Currents in GaAs FETS Due to Ionizing Radiation

R. Zuleeg; J. K. Notthoff; G. L. Troeger IEEE Transactions on Nuclear Science, 1983

Measurements of photocurrents due to pulsed ionizing radiation are reported and analyzed for planar, ion implanted GaAs junction field-effect transistors fabricated on semi-insulating GaAs substrates. With the help of various device geometries and contact arrangements, it will be shown that the primary photocurrent of the pn-junction gate of the JFET is much smaller than the additional photocurrent originating in the ...


Radiation Effects in LDD MOS Devices

Richard L. Woodruff; James R. Adams IEEE Transactions on Nuclear Science, 1987

The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays and Co-60 ...


Radiation from an electromagnetic source in a half-space of compressible plasma-surface waves

S. Seshadri 1963 Antennas and Propagation Society International Symposium, 1963

The study of the radiation characteristics of localized electromagnetic sources in ionized gaseous medium, known generally as plasmas, has application to the problem of radio communication with missiles and space vehicles passing through the ionized regions in space. In this paper, the radiation characteristics of a line source of magnetic current situated in a compressible plasma medium of semi-infinite extent ...


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Educational Resources on Ionizing radiation

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eLearning

Radiation hard charge-coupled device operating at 77 ° K using nitride/oxide gate insulators

N. Bluzer; M. C. Peckerar; J. B. Schneider; R. Fulton 1979 International Electron Devices Meeting, 1979

Radiation hard charge coupled devices have been fabricated which successfully continued to operate at cryogenic temperature (77°K) after having been exposed to ionizing radiation at this temperature. No thermal annealing was performed between the time of Co60γ irradiation and the electrical measurements. These devices were p-type buried channel CCD's with a coplanar polysilicon gate structure. The gate dielectric structure consisted ...


Generation of Interface States by Ionizing Radiation at 80K Measured by Charge Pumping and Subthreshold Slope Techniques

N. S. Saks; M. G. Ancona IEEE Transactions on Nuclear Science, 1987

Generation of fast interface states D11 by ionizing radiation has been measured in MOS transistors at 80K and 295K using charge pumping and subthreshold slope techniques. Using charge pumping, the more sensitive and reliable technique, we find that D11 are not formed by radiation at 80K. In contrast, subthreshold slope measurements appear to show an increase in D11 in MOSFETs ...


Channel and Substrate Currents in GaAs FETS Due to Ionizing Radiation

R. Zuleeg; J. K. Notthoff; G. L. Troeger IEEE Transactions on Nuclear Science, 1983

Measurements of photocurrents due to pulsed ionizing radiation are reported and analyzed for planar, ion implanted GaAs junction field-effect transistors fabricated on semi-insulating GaAs substrates. With the help of various device geometries and contact arrangements, it will be shown that the primary photocurrent of the pn-junction gate of the JFET is much smaller than the additional photocurrent originating in the ...


Radiation Effects in LDD MOS Devices

Richard L. Woodruff; James R. Adams IEEE Transactions on Nuclear Science, 1987

The purpose of this work is to investigate the response of lightly doped drain (LDD) n-channel transistors to ionizing radiation. Transistors were fabricated with conventional (non-LDD) and lightly doped drain (LDD) structures using both standard (non-hardened) and radiation hardened gate oxides. Characterization of the transistors began with a correlation of the total-dose effects due to 10 keV x-rays and Co-60 ...


Radiation from an electromagnetic source in a half-space of compressible plasma-surface waves

S. Seshadri 1963 Antennas and Propagation Society International Symposium, 1963

The study of the radiation characteristics of localized electromagnetic sources in ionized gaseous medium, known generally as plasmas, has application to the problem of radio communication with missiles and space vehicles passing through the ionized regions in space. In this paper, the radiation characteristics of a line source of magnetic current situated in a compressible plasma medium of semi-infinite extent ...


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IEEE-USA E-Books

  • Signals through Space

    This chapter contains sections titled: Light, Other Electromagnetic Signals, Biological Effects of High-Frequency Electromagnetic Signals, Biological Effects of Non-Ionizing Radiation, Standards for Exposure, Project Sanguine- Seafarer-ELF, A Natural Resource Gone, Appendix 8.1 EMP (Electromagnetic Pulse), Review Questions, Problems

  • Layout Techniques for MOSFETs

    This book aims at describing in detail the different layout techniques for remarkably boosting the electrical performance and the ionizing radiation tolerance of planar Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs) without adding any costs to the current planar Complementary MOS (CMOS) integrated circuits (ICs) manufacturing processes. These innovative layout styles are based on pn junctions engineering between the drain/source and channel regions or simply MOSFET gate layout change. These interesting layout structures are capable of incorporating new effects in the MOSFET structures, such as the Longitudinal Corner Effect (LCE), the Parallel connection of MOSFETs with Different Channel Lengths Effect (PAMDLE), the Deactivation of the Parallel MOSFETs in the Bird's Beak Regions (DEPAMBBRE), and the Drain Leakage Current Reduction Effect (DLECRE), which are still seldom explored by the semiconductor and CMOS ICs industries. Several three- dimensional (3D) numerical simulations and experimental works are referenced in this book to show how these layout techniques can help the designers to reach the analog and digital CMOS ICs specifications with no additional cost. Furthermore, the electrical performance and ionizing radiation robustness of the analog and digital CMOS ICs can significantly be increased by using this gate layout approach.

  • Planning of Mobile TV Networks

    This chapter presents Mobile TV network planning aspects by generalizing the DVB‐H principles. The dimensioning of the high level DVB‐H radio network can be summarized by three main variables, that is, the channel capacity, the coverage area and the quality of the service. In the detailed network dimensioning, the aim is to find the optimal balance of all the relevant items that have effect on the network performance and costs. The installation of the DVB‐H sites must comply with the local and international regulations of the EMC limits and the safety zones related to the limitations of exposure of the public to non‐ionizing radiation of the signals. The cost optimization part presents a complete set of CAPEX and OPEX items investigated as a function of transmitter antenna height and power levels, taking into account all the relevant deployment aspects of the equipment and planning environment in a more detailed way.

  • CMOS/SOS Frequency Synthesizer LSI Circuit for Spread Spectrum Communications

    Using a 3.5 $micro;m gate length complementary metal-oxidesemiconductor /silicon-on-sapphire (CMOS/80S) technology, a singlechip, radiation-hardened, direct digital frequency synthesizer has been developed. The circuit is a critical component of a fast-tuning wideband frequency synthesizer for spread spectrum satellite communications. Each clock period, the chip generates a new digitized sample of a sine wave, whose frequency is variable in 220 steps from dc to one-half the clock frequency. Operation at up to 7.5 MHz is possible in a worst case environment, including ionizing radiation levels up to 3 x 105 rads(Si). A computationally efficient algorithm was chosen, resulting in 12-bit output precision with only 1084 logic gates and 3840 bits of on-chip read-only memory (ROM). The accuracy of the algorithm is sufficient to maintain in-band spurious frequency components below ¿¿-¿¿65 dDc. At 300 mW, the chip replaces an MSI implementation which uses 25 integrated circuits and consumes 3.5 W.



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