Conferences related to Integrated circuit noise

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Periodicals related to Integrated circuit noise

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


Solid-State Circuits, IEEE Journal of

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as device modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete ...




Xplore Articles related to Integrated circuit noise

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Random Telegraph Signals and 1/f Noise in ZnO Nanowire Field Effect Transistors

Hao D. Xiong; Wenyong Wang; Qiliang Li; Curt A. Richter; John S. Suehle; Woong-Ki Hong; Takhee Lee; Daniel M. Fleetwood 2007 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007

Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The low frequency noise in the drain current of n-type ZnO FETs has been investigated through random telegraph signals (RTSs) at 4.2 K and 1/f noise at room temperature. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ~ 5 ...


Low Phase Noise sub-1 V Supply 12 and 18 GHz VCOs in 90 nm CMOS

Harald Jacobsson; Mingquan Bao; Lars Aspemyr; Abdelkarim Mercha; Geert Carchon 2006 IEEE MTT-S International Microwave Symposium Digest, 2006

Two low phase noise, sub-1 V supply VCO topologies have been explored at 12 and 18 GHz in a 90 nm CMOS technology for direct LO generation in microwave link applications. At 12 GHz, a cross-coupled differential NMOS pair VCO achieves a phase noise of -117 dBc/Hz at 1 MHz offset while consuming only 1.6 mW from a 0.47 V ...


Decoupling of High Performance Semiconductors Using Embedded Capacitor Technology

William Borland 2006 15th ieee international symposium on the applications of ferroelectrics, 2006

The integration of embedded DuPont ceramic capacitors and HiK polyimide based planar capacitor materials in IC packages has been investigated by a joint program between DuPont and Georgia Institute of Technology packaging research center (PRC). Test vehicles with different types of structures were designed, fabricated and tested for individual device characterization. The test vehicles included embedded ceramic-fired-on-foil capacitors with microvia ...


New intelligent power multi-chips modules with junction temperature detecting function

T. Kajiwara; A. Yamagaguchi; Y. Hoshi; K. Sakurai; J. Gallagher Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE, 1998

A new IGBT-IPM named R-IPM has been developed. This R-IPM consists of only silicon semiconductors chips, so called IPMCMs (intelligent power multi-chip modules). The exclusive monolithic IC used in the R-IPM provides over- temperature protection by directly detecting the junction temperature T/sub j/of the IGBT chips. This new T/sub j/ detection is the first of its kind. This paper describes ...


Evolution of substrate noise generation mechanisms with CMOS technology scaling

M. Badaroglu; P. Wambacq; G. Van der Plas; S. Donnay; G. G. E. Gielen; H. J. De Man IEEE Transactions on Circuits and Systems I: Regular Papers, 2006

Substrate noise is a major obstacle for single-chip integration of mixed- signal systems. To reduce this problem and to assess its evolution with CMOS technology scaling, the different mechanisms that generate substrate noise and their dependencies on different parameters need to be well understood. In this paper, we show that with downscaling of the technology, substrate noise due to supply ...


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eLearning

Random Telegraph Signals and 1/f Noise in ZnO Nanowire Field Effect Transistors

Hao D. Xiong; Wenyong Wang; Qiliang Li; Curt A. Richter; John S. Suehle; Woong-Ki Hong; Takhee Lee; Daniel M. Fleetwood 2007 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007

Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The low frequency noise in the drain current of n-type ZnO FETs has been investigated through random telegraph signals (RTSs) at 4.2 K and 1/f noise at room temperature. At room temperature, the noise power spectra have a classic 1/f dependence with a Hooge parameter that is ~ 5 ...


Low Phase Noise sub-1 V Supply 12 and 18 GHz VCOs in 90 nm CMOS

Harald Jacobsson; Mingquan Bao; Lars Aspemyr; Abdelkarim Mercha; Geert Carchon 2006 IEEE MTT-S International Microwave Symposium Digest, 2006

Two low phase noise, sub-1 V supply VCO topologies have been explored at 12 and 18 GHz in a 90 nm CMOS technology for direct LO generation in microwave link applications. At 12 GHz, a cross-coupled differential NMOS pair VCO achieves a phase noise of -117 dBc/Hz at 1 MHz offset while consuming only 1.6 mW from a 0.47 V ...


Decoupling of High Performance Semiconductors Using Embedded Capacitor Technology

William Borland 2006 15th ieee international symposium on the applications of ferroelectrics, 2006

The integration of embedded DuPont ceramic capacitors and HiK polyimide based planar capacitor materials in IC packages has been investigated by a joint program between DuPont and Georgia Institute of Technology packaging research center (PRC). Test vehicles with different types of structures were designed, fabricated and tested for individual device characterization. The test vehicles included embedded ceramic-fired-on-foil capacitors with microvia ...


New intelligent power multi-chips modules with junction temperature detecting function

T. Kajiwara; A. Yamagaguchi; Y. Hoshi; K. Sakurai; J. Gallagher Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE, 1998

A new IGBT-IPM named R-IPM has been developed. This R-IPM consists of only silicon semiconductors chips, so called IPMCMs (intelligent power multi-chip modules). The exclusive monolithic IC used in the R-IPM provides over- temperature protection by directly detecting the junction temperature T/sub j/of the IGBT chips. This new T/sub j/ detection is the first of its kind. This paper describes ...


Evolution of substrate noise generation mechanisms with CMOS technology scaling

M. Badaroglu; P. Wambacq; G. Van der Plas; S. Donnay; G. G. E. Gielen; H. J. De Man IEEE Transactions on Circuits and Systems I: Regular Papers, 2006

Substrate noise is a major obstacle for single-chip integration of mixed- signal systems. To reduce this problem and to assess its evolution with CMOS technology scaling, the different mechanisms that generate substrate noise and their dependencies on different parameters need to be well understood. In this paper, we show that with downscaling of the technology, substrate noise due to supply ...


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