9,343 resources related to Indium phosphide
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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Houtsma, V.; Hu, T.; Weimann, N.G.; Kopf, R.; Tate, A.; Frackoviak, J.; Reyes, R.; Chen, Y.-K.; Zhang, L. Avionics, Fiber- Optics and Photonics Technology Conference (AVFOP), 2011 IEEE, 2011
We demonstrated an integrated InP high-power dual pair balanced uni-traveling carrier photo-detector. Each pair delivers over 1 W of RF output power into a 50 Ω load at 2 GHz which is 6 dB higher than a discrete diode of the same junction diameter. The responsivity is 0.65 A/W and the common mode rejection ratio of the balanced diode pair ...
Qasaimeh, O.; Gebretsadik, H.; Bhattacharya, P.; Caneau, C.; Bhat, R. Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International, 1999
Novel 1.54 /spl mu/m InP-based vertical cavity surface-emitting lasers have been realized with defect-free patterned GaAs/AlGaAs mirrors. Lasers were designed with InP/InGaAsP bottom mirrors, a strain compensated InGaAsP quantum well active region, an InAlAs-oxide current confinement layer and short-stack oxidized GaAs/AlGaAs top DBR mirrors. Threshold current as low as 5 mA is obtained at 15/spl deg/C for an 8 /spl ...
Jian-Jun He; Lamontagne, B.; Delage, A.; Erickson, L.; Davies, M.; Koteles, E.S. Lightwave Technology, Journal of, 1998
We present detailed modeling and experimental results for an improved design of an InGaAsP-InP wavelength demultiplexer based on a monolithically integrated Rowland circle grating. The design incorporated ten wavelength channels at 1.55 μm with a uniform spacing of 2 nm. The total on-chip loss was about 10 dB and the crosstalk between adjacent channels was as low as -25 dB. ...
Houston, P.A.; Helme, J.; Wai Keng Ng; Chee Hing Tan Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on, 2004
A theoretical and experimental analysis of the performance of InP/InGaAs heterostructure phototransistors (HPT) has been carried out and comparisons made with avalanche photodiodes (APDs) and PIN-HBT photodetectors. Although the APDs are intrinsically faster, the HPT in travelling-wave form has demonstrated excellent responsivity and power handling capability.
Kinsey, G.S.; Campbell, J.C.; Dentai, A.G. Photonics Technology Letters, IEEE, 2001
An In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As waveguide avalanche photodiode with a record gain-bandwidth product of over 320 GHz has been demonstrated. A bandwidth of 28 GHz was achieved at low gains with low excess noise and a quantum efficiency of 16% at 1.55 μm.
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