Indium phosphide

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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. (Wikipedia.org)






Conferences related to Indium phosphide

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes

  • 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductores such as GaAs, SiGe and other materials. Coverage embraces all aspects of the technology from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductors such as GaAs, SiGe and other materials. Coverage embraces all aspects of the technology from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductors such as GaAs, InP, GaN, SiGe and other materials. Coverage embraces all aspects of the technology, from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2009 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    CSICS is the preeminent international forum for developments in compound semiconductor integrated circuits, embracing GaAs, InP, GaN, SiGe, and more recently, millimeter wave CMOS technology. Coverage includes all aspects of the technology, from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.


2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)

IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.


2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)

The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.

  • 2011 3rd Asia Symposium on Quality Electronic Design (ASQED 2011)

    ASQED bridges the gap among Electronic/Semiconductor ecosystem members providing electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality.

  • 2010 2nd Asia Symposium on Quality Electronic Design (ASQED 2010)

    ASQED 2010 strives to bridge the gap among electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design and intends to highlight and accelerate co-operation among the IC design, EDA, Semiconductor Process Technology, IC Packaging, Test, and Manufacturing communities.

  • 2009 1st Asia Symposium on Quality Electronic Design (ASQED 2009)

    ASQED 09 is aimed at bridging the gap among electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality. The conference emphasizes a holistic approach toward electronic design and intends to highlight and accelerate cooperation among the IC Design, EDA, Semiconductor Process Technology, IC Packaging, Test, and Manufacturing communities.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2008 2nd Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2006 Nanotechnology Materials and Devices Conference (NMDC)


2009 Reliability of Compound Semiconductors Workshop (ROCS)

The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.

  • 2008 Reliability of Compound Semiconductors Workshop (ROCS)

    The ROCS workshop covers the reliability of electron devices fabricated from compound semiconductors including GaAs, InP, GaN, SiGe, SiC, InSb and related compounds and alloys (e.g. AlGaAs, GaSb). Topics include failure mechanisms, accelerated testing, radiation effects, thermal analysis, and quality assurance for HEMTs, PHEMTs, HBTs, MESFETs, HFETs and other devices.

  • 2007 Reliability of Compound Semiconductors Workshop (ROCS)

    The Reliability of Compound Semiconductors Workshop brings together researchers, manufacturers, & users of compound semiconductor devices to discuss the latest results and new developments in all phases of Compound Semiconductor Reliability. Original papers discussing work in progress and emerging device technologies are encouraged.



Periodicals related to Indium phosphide

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Spectrum, IEEE

IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...



Most published Xplore authors for Indium phosphide

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Xplore Articles related to Indium phosphide

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Distributed feedback InGaAsP/InP lasers with window region emitting at 1.5 µm range

S. Akiba; K. Utaka; K. Sakai; Y. Matsushima IEEE Journal of Quantum Electronics, 1983

Distributed feedback (DFB) InGaAsP/InP lasers with a window region formed at an end of the corrugated DFB region were made in order to overcome the problems inherent in the previous structures of DFB lasers with cleaved, sawed, etched, or AR-coated facets, or with an unexcited corrugation region. The window structure DFB lasers showed linear current versus output ( ![I-L](/images/tex/2138.gif) ) ...


InGaAsP/InP separated multiclad layer stripe geometry laser emitting at 1.5 µm wavelength

H. Imai; H. Ishikawa; T. Tanahashi; K. Hori IEEE Journal of Quantum Electronics, 1983

We have developed an InGaAsP/InP separated multiclad layer (SML) stripe geometry laser emitting at 1.5 μm wavelength. In this laser, the optical confinement is done by the effective refractive index step owing to the formation of the coupled waveguide outside the stripe region. The current confinement is done by the p-n-p-n structure outside the stripe region. The CW threshold current ...


High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs

L. Tran; R. Isobe; M. Delaney; R. Rhodes; D. Jang; J. Brown; L. Nguyen; M. Le; M. Thompson; T. Liu IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1996

A millimeter-wave MMIC low noise amplifier chip set has been developed. Based on the InP HEMT technology, these LNAs provide state-of-the-art performance as well as excellent yield and repeatability. With greater than 50% chip yield, a three-stage Q-band LNA design achieved 26 to 31 dB of gain from 42 to 50 GHz and 1.8 dB average noise figure from 43.3 ...


Bismuth-based semiconductors for mid-infrared photonic devices

S. J. Sweeney; I. P. Marko; S. R. Jin; K. Hild; Z. Batool 2015 IEEE Summer Topicals Meeting Series (SUM), 2015

Owing to the versatile band-structure made possible through the introduction of bismuth in III-V systems, we discuss the potential to produce efficient emitters and detectors in the mid-infrared based upon conventional GaAs and InP substrates.


Status of InP HEMT technology for microwave receiver applications

P. M. Smith IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1996

The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are ...


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Educational Resources on Indium phosphide

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eLearning

Distributed feedback InGaAsP/InP lasers with window region emitting at 1.5 µm range

S. Akiba; K. Utaka; K. Sakai; Y. Matsushima IEEE Journal of Quantum Electronics, 1983

Distributed feedback (DFB) InGaAsP/InP lasers with a window region formed at an end of the corrugated DFB region were made in order to overcome the problems inherent in the previous structures of DFB lasers with cleaved, sawed, etched, or AR-coated facets, or with an unexcited corrugation region. The window structure DFB lasers showed linear current versus output ( ![I-L](/images/tex/2138.gif) ) ...


InGaAsP/InP separated multiclad layer stripe geometry laser emitting at 1.5 µm wavelength

H. Imai; H. Ishikawa; T. Tanahashi; K. Hori IEEE Journal of Quantum Electronics, 1983

We have developed an InGaAsP/InP separated multiclad layer (SML) stripe geometry laser emitting at 1.5 μm wavelength. In this laser, the optical confinement is done by the effective refractive index step owing to the formation of the coupled waveguide outside the stripe region. The current confinement is done by the p-n-p-n structure outside the stripe region. The CW threshold current ...


High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs

L. Tran; R. Isobe; M. Delaney; R. Rhodes; D. Jang; J. Brown; L. Nguyen; M. Le; M. Thompson; T. Liu IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1996

A millimeter-wave MMIC low noise amplifier chip set has been developed. Based on the InP HEMT technology, these LNAs provide state-of-the-art performance as well as excellent yield and repeatability. With greater than 50% chip yield, a three-stage Q-band LNA design achieved 26 to 31 dB of gain from 42 to 50 GHz and 1.8 dB average noise figure from 43.3 ...


Bismuth-based semiconductors for mid-infrared photonic devices

S. J. Sweeney; I. P. Marko; S. R. Jin; K. Hild; Z. Batool 2015 IEEE Summer Topicals Meeting Series (SUM), 2015

Owing to the versatile band-structure made possible through the introduction of bismuth in III-V systems, we discuss the potential to produce efficient emitters and detectors in the mid-infrared based upon conventional GaAs and InP substrates.


Status of InP HEMT technology for microwave receiver applications

P. M. Smith IEEE 1996 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers, 1996

The current status of InP-based high electron mobility transistor (HEMT) technology for low noise amplification at frequencies up to more than 100 GHz is presented. Following a review of recent advances industry-wide in both device and circuit performance, two issues which will pace the rate at which this new technology can be inserted into microwave systems-material/process maturity and long-term reliability-are ...


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IEEE-USA E-Books

  • Clock and Data Recovery IC for 40Gb/s FiberOptic Receiver

    The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gbls. We report a 40-Gb/s CDR fabricated in indium-phosphide heteroJunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in tum, reduces the circuit complexity (transistor count) and the vollage- eontrolled oscillator (YCO) requirements. The IC includes an on-chip _LC_ VCO, on-chip clock dividers to drive an extemal demultiplexer, and low-frequency PLL control loop and on-chip Umiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.



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