9,369 resources related to Indium phosphide
- Topics related to Indium phosphide
- IEEE Organizations related to Indium phosphide
- Conferences related to Indium phosphide
- Periodicals related to Indium phosphide
- Most published Xplore authors for Indium phosphide
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Suemitsu, T.; Yokoyama, H.; Sugiyama, Hiroki; Tokumitsu, M. Electron Device Letters, IEEE, 2007
We demonstrated the suitability of the InP HEMTs with the InAlAsSb Schottky barrier to realize the high threshold voltage (enhancement mode), low gate current, and low power consumption. This quaternary compound material increases the conduction band discontinuity to the InGaAs channel by introducing only 10% of antimony to InAlAs. The gate current is reduced by an order of the magnitude ...
Haysom, J.E.; Glew, R.; Blaauw, C.; Driad, R.; Macquistan, D.; Hampel, C.A.; Greenspan, J.; Bryskiewicz, T. Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th, 2002
Zn diffusion during MOCVD growth is studied in a series of different structures using SIMS analysis. A first experiment supports a concentration dependent diffusion rate, and a +1 charge on the Zn interstitial. The Zn diffusion front is found to be quite sharp, and this is used advantageously in combination with an undoped spacer layer in a p-i-n structure. Further ...
Buckalo, A.F.; Pearson, A.E. Adaptive Processes (8th) Decision and Control, 1969 IEEE Symposium on, 1969
This paper is concerned with making on-line adjustments in the adjustable parameters of a feedback control system in order to compensate for a deterioration of performance brought about by unknown variations in other system parameters. The algorithms to be discussed here are extensions and modifications of an algorithm reported in  and . The basic control system containing known, adjustable ...
Koyama, F.; Suematsu, Y.; Arai, S.; Tawee, T. Quantum Electronics, IEEE Journal of, 1983
The theoretical bases and the experimental results of the dynamic behavior of ![1.5-1.6 \mu](/images/tex/2395.gif) m GaInAsP/InP dynamic-single-mode (DSM) lasers with distributed Bragg reflector (DBR) are given. A condition for the single-mode operation of a rapidly modulated DBR laser, called a "dynamic- single-mode laser," and the dynamic spectral width were theoretically presented. Experimentally, buried-heterostructure distributed-Bragg-reflector integrated-twin-guide (BH-DBR-ITG) and buried-heterostructure butt-jointed- built-in ...
Kawano, Y.; Nakasha, Y.; Suzuki, T.; Ohki, T.; Takahashi, T.; Makiyama, K.; Hirose, Tatsuya; Joshin, K. Microwave Conference, 2006. 36th European, 2006
A next-generation ultra-wideband (UWB) pulse generator with a biphase function is reported. To obtain ultrashort duration pulses, a novel speeding-up and circuit and biphase modulator circuit were developed. The IC was fabricated in a 0.13-μm-gate InP-HEMT technology, which has gm of 1520 mS/mm and a f/T of 195 GHz. A pulse with a full width at half maximum of 9 ...
No standards are currently tagged "Indium phosphide"