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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSISC)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphen
2013 25th International Conference on Indium Phosphide and Related Materials (IPRM)
Science and engineering of materials, optoelectronics devices, electron devices, processes, and applications those are related with InP
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufa
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
Metaferia, Wondwosen; Dagur, Pritesh; Junesand, Carl; Hu, Chen; Lourdudoss, Sebastian Journal of Applied Physics, 2013
We describe a simple, aqueous and low thermal budget process for deposition of polycrystalline indium phosphide on silicon substrate. Using stoichiometric indium oxide films prepared from its spin-coated precursor on silicon as an intermediate step, we achieve stoichiometric indium phosphide films through phosphidisation. Both indium oxide and indium phosphide have been characterized for surface morphology, chemical composition, and crystallinity. The ...
Kobayashi, N.P.; Shih-Yuan Wang; Xuema Li; Williams, R.Stanley; Suqin Wang; Schmidt, H. Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE, 2006
Indium phosphide nanostructures grown on hydrogenated silicon films are studied. The hydrogenated silicon films were deposited on various metallic and dielectric substrate surfaces, then indium phosphide nanostructures were grown on the hydrogenated silicon films. The hydrogenated silicon films and the indium phosphide nanostructures were examined to assess their structural, chemical and optical properties.
Jain, R.K.; Flood, D.J. Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE, 1990
Metalorganic chemical-vapor-deposited heteroepitaxial indium phosphide solar cell performance was simulated using a PC-1D computer model. The effect of emitter parameter variation on the performance of an n+/p/p+ heteroepitaxial InP/GaAs solar cell was studied. It was observed that thin and lightly doped emitters offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency ...
Dauplaise, H.M.; Lorenzo, J.P.; Martin, E.A.; Vaccaro, K.; Ramseyer, G.O. Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on, 1993
The use of thin silicon films for indium phosphide device applications was investigated. Devices prepared with the silicon interlayers show a decrease in hysteresis, flat band voltage shift, and interface state density. Angular resolved X-ray photoelectron spectroscopy studies of the silicon-indium phosphide interface indicate that these effects are due to the interaction of the silicon with the native oxide of ...
Eddison, I.G.; Davies, I.; Brookbanks, D.M. Microwave Conference, 1981. 11th European, 1981
Details are given of the current development stage of CW indium phosphide transferred electron oscillators (TEOs) designed for mm-wave applications. The aims of low-noise, good reliability and thermal stability dictate the use of n+-n-n+ epitaxial material, details of which are given. Device fabrication is discussed with emphasis being placed upon the thermal and electrical parasitics inherent in the diode structure. ...
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IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...