Indium phosphide

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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. (Wikipedia.org)






Conferences related to Indium phosphide

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes

  • 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductores such as GaAs, SiGe and other materials. Coverage embraces all aspects of the technology from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductors such as GaAs, SiGe and other materials. Coverage embraces all aspects of the technology from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductors such as GaAs, InP, GaN, SiGe and other materials. Coverage embraces all aspects of the technology, from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2009 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    CSICS is the preeminent international forum for developments in compound semiconductor integrated circuits, embracing GaAs, InP, GaN, SiGe, and more recently, millimeter wave CMOS technology. Coverage includes all aspects of the technology, from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.


2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)

IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.


2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)

The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.

  • 2011 3rd Asia Symposium on Quality Electronic Design (ASQED 2011)

    ASQED bridges the gap among Electronic/Semiconductor ecosystem members providing electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality.

  • 2010 2nd Asia Symposium on Quality Electronic Design (ASQED 2010)

    ASQED 2010 strives to bridge the gap among electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design and intends to highlight and accelerate co-operation among the IC design, EDA, Semiconductor Process Technology, IC Packaging, Test, and Manufacturing communities.

  • 2009 1st Asia Symposium on Quality Electronic Design (ASQED 2009)

    ASQED 09 is aimed at bridging the gap among electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality. The conference emphasizes a holistic approach toward electronic design and intends to highlight and accelerate cooperation among the IC Design, EDA, Semiconductor Process Technology, IC Packaging, Test, and Manufacturing communities.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2008 2nd Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2006 Nanotechnology Materials and Devices Conference (NMDC)


2009 Reliability of Compound Semiconductors Workshop (ROCS)

The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.

  • 2008 Reliability of Compound Semiconductors Workshop (ROCS)

    The ROCS workshop covers the reliability of electron devices fabricated from compound semiconductors including GaAs, InP, GaN, SiGe, SiC, InSb and related compounds and alloys (e.g. AlGaAs, GaSb). Topics include failure mechanisms, accelerated testing, radiation effects, thermal analysis, and quality assurance for HEMTs, PHEMTs, HBTs, MESFETs, HFETs and other devices.

  • 2007 Reliability of Compound Semiconductors Workshop (ROCS)

    The Reliability of Compound Semiconductors Workshop brings together researchers, manufacturers, & users of compound semiconductor devices to discuss the latest results and new developments in all phases of Compound Semiconductor Reliability. Original papers discussing work in progress and emerging device technologies are encouraged.



Periodicals related to Indium phosphide

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Spectrum, IEEE

IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...




Xplore Articles related to Indium phosphide

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Hot Electron Degradation of the DC and Microwave Performance of InAlAs/InGaAs/InP HEMTs

Menozzi, R.; Borgarino, M.; Baeyeans, Y.; Van Hove, M.; Fantini, F. Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European, 1996

This work for the first time describes the results of hot electron stress experiments performed on InAlAs/InGaAs/InP HEMTs. Both DC and RF device degradation have been studied. The main effect observed is a reduction of the DC transconductance at high gate bias; at RF this results in a decrease of current and power gain, hence of the device cutoff frequencies.


Monolithic integration of InP-based waveguide photodiodes with MIM capacitors for compact coherent receiver

Masuyama, R.; Yagi, H.; Inoue, N.; Onishi, Y.; Katsuyama, T.; Kikuchi, T.; Yoneda, Y.; Shoji, H. Indium Phosphide and Related Materials (IPRM), 2013 International Conference on, 2013

We have demonstrated monolithic integration of InP-based waveguide photodiodes (WGPDs) with metal-insulator-metal (MIM) capacitors using the 3-inch diameter wafer process. The uniformity of MIM capacitance and the dielectric breakdown voltage of the capacitor obtained within +/-2 % and over 100 V, respectively. The dark current of WGPDs was less than 3 nA at a reverse voltage of 1.6 V, owing ...


Distributed amplifiers in InP DHBT for 100-Gbit/s operation

dupuy, J.Y.; Konczykowska, A.; Jorge, F.; Riet, M.; Godin, J. Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, 2010

Two single-ended distributed amplifiers were designed and fabricated using a 0.7-µm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier's gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier's gain and bandwidth are respectively higher than 13 dB and 110 GHz. Eye diagram measurements were performed at 86 Gbit/s showing clear eye opening and ...


Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions

Chiu, L.C.; Yu, K.L.; Margalit, S.; Chen, T.R.; Koren, U.; Hasson, A.; Yariv, A. Quantum Electronics, IEEE Journal of, 1983

A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.


Growth process for high performance of InGaAs MOSFETs

Miyamoto, Y.; Kanazawa, T.; Yonai, Y.; Ohsawa, K.; Mishima, Y.; Irisawa, T.; Oda, M.; Tezuka, T. Device Research Conference (DRC), 2014 72nd Annual, 2014

To obtain high performance in nMOSFETs, the introduction of high-mobility channel material such as InGaAs is a promising approach. However, the required source doping concentration for a high driving current cannot be obtained by ion implantation in InGaAs. One method of achieving a heavily doped source in III-V semiconductor MOSFETs is by growing an epitaxial source/drain structure.1 For realizing such ...


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