9,410 resources related to Indium phosphide
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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Revin, D.G.; Wilson, L.R.; Zibik, E.A.; Green, R.P.; Cockburn, J.W.; Steer, M.J.; Airey, R.J.; Hopkinson, M.; Offermans, P.; Koenraad, P.M.; Wolter, J.H. Lasers and Electro-Optics, 2005. (CLEO). Conference on, 2005
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system
Perera, R.R.; Pollock, T.S.; Abhayapala, T.D. Communications Theory Workshop, 2005. Proceedings. 6th Australian, 2005
The mutual information of a discrete time Rayleigh fading channel is considered, where neither the transmitter nor the receiver has the knowledge of the channel state information. We specifically derive a lower bound for the mutual information of this channel when the input distribution is Gaussian. The bound is expressed in terms of the capacity of the corresponding non fading ...
Rohr, Carsten; Connolly, J.P.; Barnham, K.W.J.; Mazzer, M.; Button, C.C.; Clark, J. Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE, 2000
For thermophotovoltaic (TPV) applications, there is considerable interest at present in extending the absorption to longer wavelengths for higher overall system efficiencies with lower temperature sources. With strain-balanced In1-xGaxAs/In1-yGa yAs (InP) quantum well cells (QWCs) the absorption can be extended, while retaining a low dark current. We present a strain-balanced In0.62Ga0.38As/In0.47Ga 0.53As QWC, which extends the absorption edge beyond that ...
Lelarge, F.; Gaborit, F.; Gentner, J.L. Indium Phosphide and Related Materials, 2003. International Conference on, 2003
Wavelength emission of GaxIn1-xAsyP1-y/InP multiple quantum wells (MQW's) heterostructures -town in a multiwafer Gas Source Molecular Beam Epitaxy (GSMBE) is studied in details. Excellent photoluminescence wavelength uniformity is reported in 4×2-inch and 1×4-inch configurations, demonstrating the compatibility of GSMBE process with large scale 1.55 μm telecom laser production. A strong dependence of wavelength dispersion on group-V to group- III ratio ...
Nishiyama, N. Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International, 2008
Designs and characteristics of InP-based VCSELs with AlGaInAs/InP DBR are reported. High temperature (>85degC) and high speed (>10 Gbit/s) operation have been demonstrated. This VCSEL structure can be applicable to other applications such as tunable lasers.
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