9,320 resources related to Indium phosphide
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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Ponchak, G.E.; Matloubian, M.; Katehi, L.P.B. Microwave Theory and Techniques, IEEE Transactions on, 1999
Measured attenuation of coplanar waveguide (CPW) transmission lines with narrow strip and slot widths fabricated on GaAs, high-resistivity Si, and InP is used to derive a new closed form equation to calculate line losses. This new equation is shown to be more accurate than previous expressions, yet simple enough to be programmed into a hand-held calculator since it is based ...
Droge, E.; Bottcher, E.H.; Kollakowski, St.; Strittmatter, A.; Reimann, O.; Steingruber, R.; Umbach, A.; Bimberg, D. Optical Communication, 1998. 24th European Conference on, 1998
An InP-based travelling-wave photodetector for long-wavelength operation is reported it comprises an InGaAlAs-core optical waveguide along which vertically coupled InGaAs-InP subhalfmicron feature size MSM detectors are periodically distributed. A 3-dB bandwidth of 78 GHz is achieved at 1.55-μm light
Yong-Zhen Huang; Yong-hong Hu; Qin Chen; Shi-Jiang Wang; Zhong-Chao Fan Transparent Optical Networks, 2007. ICTON '07. 9th International Conference on, 2007
Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are fabricated using standard photolithography and inductively-coupled-plasma etching techniques. Continuous-wave electrically injected 1550 nm ETR laser with side length ranged from 15 to 30 mum are realized at room temperature.
Hirano, R.; Kanazawa, T.; Nakamura, M. Indium Phosphide and Related Materials, 1992., Fourth International Conference on, 1992
The authors have developed a simple method for reducing dislocation densities of 2-in InP single crystals using a thermal baffle. For S-doped and Zn-doped InP, lower dislocation density (less than 500 cm/sup -2/) area (DF area) can be increased by using a single thermal baffle and a pBN crucible. For Sn-doped and Fe-doped InP, average dislocation densities of less than ...
Eisenstein, G.; Capua, A.; Karni, O.; Reithmaier, J.P. Indium Phosphide and Related Materials (IPRM), 2013 International Conference on, 2013
We present dynamical properties of quantum dot lasers and amplifiers operating under extreme nonlinear conditions. Several unique phenomena including coherent quantum interactions are demonstrated.
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