9,363 resources related to Indium phosphide
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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Lelarge, F.; Sanchez, J.J.; Gaborit, F.; Gentner, J.L. Molecular Beam Epitaxy, 2002 International Conference on, 2002
Despite some very recent progresses on the way towards long-wavelength laser emission on GaAs substrates, opto-electronic devices used for telecommunication systems are still mainly grown on InP substrates. The Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y/ material system is widely used to fabricate devices emitting in the 1.2-1.6 /spl mu/m wavelength window, GSMBE technology leading to a very accurate and reproducible control ...
Schwesig, P.; Sahr, U.; Friedrich, J.; Muller, G.; Kohler, A.; Kretzer, U.; Eichler, S.; Muhe, A. Indium Phosphide and Related Materials, 2005. International Conference on, 2005
The growth of twin-free 4" semi-insulating InP crystals is reported. The influence of the EPD of the seed crystal and the cone angle of the crucible on dislocation and twin formation were studied.
Rohr, Carsten; Connolly, J.P.; Barnham, K.W.J.; Mazzer, M.; Button, C.C.; Clark, J. Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE, 2000
For thermophotovoltaic (TPV) applications, there is considerable interest at present in extending the absorption to longer wavelengths for higher overall system efficiencies with lower temperature sources. With strain-balanced In1-xGaxAs/In1-yGa yAs (InP) quantum well cells (QWCs) the absorption can be extended, while retaining a low dark current. We present a strain-balanced In0.62Ga0.38As/In0.47Ga 0.53As QWC, which extends the absorption edge beyond that ...
Hirano, R.; Kanazawa, T.; Nakamura, M. Indium Phosphide and Related Materials, 1992., Fourth International Conference on, 1992
The authors have developed a simple method for reducing dislocation densities of 2-in InP single crystals using a thermal baffle. For S-doped and Zn-doped InP, lower dislocation density (less than 500 cm/sup -2/) area (DF area) can be increased by using a single thermal baffle and a pBN crucible. For Sn-doped and Fe-doped InP, average dislocation densities of less than ...
Hur, Katerina Y.; McTaggart, R.A.; Ventresca, M.P.; Wohlert, R.; Aucoin, L.M.; Kazior, T.E. Electron Device Letters, IEEE, 1995
High gain, millimeter wave AlInAs/GaInAs/InP HEMT's with individually grounded source finger vias have been fabricated for the first time using a high resolution Cl/sub 2/:HBr:BCl/sub 3/:Ar RIE process. For comparison of device characteristics at millimeter wave frequencies, HEMT's with end source vias were also fabricated on the same wafer. Fixtured RF characterization has revealed significant reduction in source inductance and ...
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