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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Menozzi, R.; Borgarino, M.; Baeyeans, Y.; Van Hove, M.; Fantini, F. Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European, 1996
This work for the first time describes the results of hot electron stress experiments performed on InAlAs/InGaAs/InP HEMTs. Both DC and RF device degradation have been studied. The main effect observed is a reduction of the DC transconductance at high gate bias; at RF this results in a decrease of current and power gain, hence of the device cutoff frequencies.
Masuyama, R.; Yagi, H.; Inoue, N.; Onishi, Y.; Katsuyama, T.; Kikuchi, T.; Yoneda, Y.; Shoji, H. Indium Phosphide and Related Materials (IPRM), 2013 International Conference on, 2013
We have demonstrated monolithic integration of InP-based waveguide photodiodes (WGPDs) with metal-insulator-metal (MIM) capacitors using the 3-inch diameter wafer process. The uniformity of MIM capacitance and the dielectric breakdown voltage of the capacitor obtained within +/-2 % and over 100 V, respectively. The dark current of WGPDs was less than 3 nA at a reverse voltage of 1.6 V, owing ...
dupuy, J.Y.; Konczykowska, A.; Jorge, F.; Riet, M.; Godin, J. Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, 2010
Two single-ended distributed amplifiers were designed and fabricated using a 0.7-µm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier's gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier's gain and bandwidth are respectively higher than 13 dB and 110 GHz. Eye diagram measurements were performed at 86 Gbit/s showing clear eye opening and ...
Chiu, L.C.; Yu, K.L.; Margalit, S.; Chen, T.R.; Koren, U.; Hasson, A.; Yariv, A. Quantum Electronics, IEEE Journal of, 1983
A model calculation for the field and hot carrier enhanced electron leakage in InGaAsP/InP LED's and lasers is presented. The significant influence of the doping level in the P-InP confining layer on leakage current is confirmed.
Miyamoto, Y.; Kanazawa, T.; Yonai, Y.; Ohsawa, K.; Mishima, Y.; Irisawa, T.; Oda, M.; Tezuka, T. Device Research Conference (DRC), 2014 72nd Annual, 2014
To obtain high performance in nMOSFETs, the introduction of high-mobility channel material such as InGaAs is a promising approach. However, the required source doping concentration for a high driving current cannot be obtained by ion implantation in InGaAs. One method of achieving a heavily doped source in III-V semiconductor MOSFETs is by growing an epitaxial source/drain structure.1 For realizing such ...
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