9,361 resources related to Indium phosphide
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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Hangauer, A.; Chen, J.; Amann, M.-C. Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on, 2010
The FM amplitude/phase responses of InP-based VCSELs at 1.5µm, 1.8µm and 2.3µm are presented and compared. The plasma effect is clearly observed although at 2.3µm it is significantly lower. This interesting result is discussed.
Jian-Jun He; Lamontagne, B.; Delage, A.; Erickson, L.; Davies, M.; Koteles, E.S. Lightwave Technology, Journal of, 1998
We present detailed modeling and experimental results for an improved design of an InGaAsP-InP wavelength demultiplexer based on a monolithically integrated Rowland circle grating. The design incorporated ten wavelength channels at 1.55 μm with a uniform spacing of 2 nm. The total on-chip loss was about 10 dB and the crosstalk between adjacent channels was as low as -25 dB. ...
Herben, C.G.P.; Maat, D.H.P.; Leijtens, X.J.M.; Leys, M.R.; Oei, Y.S.; Smit, M.K. Photonics Technology Letters, IEEE, 1999
A four wavelength 2/spl times/2 optical wavelength-division-multiplexed cross- connect with dilated switches is reported. The device is monolithically integrated on InP and consist of two eight-channel PHASAR's combined with 16 electrooptic Mach-Zehnder interferometer switches. On-chip loss is less than -17 dB and crosstalk is better than -20 dB.
Radisic, V.; Leong, K.M.K.H.; Mei, X.; Sarkozy, S.; Yoshida, W.; Deal, W.R. Microwave Theory and Techniques, IEEE Transactions on, 2012
In this paper, progress toward developing solid-state power-amplifier modules at 0.65 THz is reported. This work is enabled by a >;1 THz fMAX InP HEMT transistor with a 30-nm gate and an integrated circuit process specifically tailored for circuits operating at frequencies approaching 1 THz. The building block of the reported amplifier modules is an eight-stage terahertz monolithic integrated circuit ...
Hirano, R.; Kanazawa, T.; Nakamura, M. Indium Phosphide and Related Materials, 1992., Fourth International Conference on, 1992
The authors have developed a simple method for reducing dislocation densities of 2-in InP single crystals using a thermal baffle. For S-doped and Zn-doped InP, lower dislocation density (less than 500 cm/sup -2/) area (DF area) can be increased by using a single thermal baffle and a pBN crucible. For Sn-doped and Fe-doped InP, average dislocation densities of less than ...
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