19,124 resources related to Indium phosphide
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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes
IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.
2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)
The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.
IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...
Semiconductor Device Research Symposium, 2003 International, 2003
The paper presents the investigation of the low- frequency noise characteristics of D-mode and E-mode 0.13 μm In0.65GaAs p-HEMT under influence of impact ionisation induced gate hole current. The D-mode p-HEMT having a InP Schottky gate showed Lorentzian low-frequency noise components and drift of corner frequency due to drain bias change, while the InAlAs gate E-mode p-HEMT showed no change ...
Acoustics, Speech, and Signal Processing (ICASSP), 2002 IEEE International Conference on, 2002
This paper addresses the interpolation of Head-Related Transfer Functions (HRTFs) for 3D-sound generation through headphones. HRTFs are transfer functions associated with the paths between sound sources and the ears, and are usually measured for a finite set of source locations around the listener. Generation of 3D-sound at any other virtual positions requires interpolation procedures. In this work, the Inter-positional Transfer ...
Quantum Electronics, IEEE Journal of, 1986
In this paper we describe the stop-cleaving technique for locally cleaving the mirrors of semiconductor lasers without cleaving the entire substrate, and its applications. The technique is suitable for batch processing with a good yield and, therefore, can be applied to preparing optoelectronic integrated circuits (OEIC's). InGaAsP/InP double-channel-planar-buried-heterostructure lasers emitting at 1.3 μm are fabricated utilizing this technique with threshold ...
Semiconductor Device Research Symposium, 2003 International, 2003
In this paper, we fabricated a 0.13 μm ASR gate In0.65GaAs P-HEMT by inserting additional dummy gate line and using DDS gate structure. The fabricated device showed excellent DC and RF characteristics with a improvement in output conductance (Gds) and maximum oscillation frequency (fmax). These results demonstrate that an ASR gate structure for high performance 100 nm scale InP P-HEMT.
Indium Phosphide and Related Materials, 1998 International Conference on, 1998
We report on the design, fabrication and characterization of a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of λ=1.55 μm. The three-stage-amplifier achieves a transimpedance of 54.5 dBΩ (530 Ω) and the optical/electrical -3dB-bandwidth of the entire receiver is 23 GHz. This corresponds to a transimpedance-bandwidth product of 12 THzΩ, which is one of the highest values published to date
A. Somers; W. Kaiser; J. P. Reithmaier; A. Forchel International Conference on Indium Phosphide and Related Materials, 2005, 2005
The excellent wavelength tuning properties of InP-based quantum dash layer structures were used to realise ultra-wide gain bandwidth lasers (>250 nm) for 1.55 μm telecom applications and high performance long-wavelength 1.9 μm lasers for gas sensing applications.
Wonill Ha; Zach Griffith; Dae-Hyun Kim; Peter Chen; Miguel Urteaga; Bobby Brar Indium Phosphide & Related Materials (IPRM), 2010 International Conference on, 2010
We report the development of high performance metamorphic InP high electron mobility transistors (mHEMTs) with InAs composite channel design and three interconnect metal layers suitable for advanced RF and mixed signal integrated circuits. An un-passivated 35 nm Lg device showed RF figures-of-merit of 533 GHz fτ and 343 GHz fmax. After full circuit processing, encapsulated in BCB, a 35 nm ...
Xinchun Lin; Shan Gao; Jinda Li; He Lei; Yong Kang Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on, 2011
The three-level neutral-point-clamped (NPC) inverter has attracted significant interest for high power/voltage applications, due to its significant advantages. A drawback of NPC inverter is that it is prone to voltage drifts and low-frequency voltage ripples of the neutral-point. In this paper, a novel control strategy of neutral-point balancing under SVPWM-based switching strategy is proposed which can be generally applied for ...
Yanning Sun; S. J. Koester; E. W. Kiewra; K. E. Fogel; D. K. Sadana; D. J. Webb; J. Fompeyrine; J. -p. Locquet; M. Sousa; R. Germann 2006 64th Device Research Conference, 2006
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O. Raz; M. Tassaert; G. Roelkens; H. J. S. Dorren 2013 15th International Conference on Transparent Optical Networks (ICTON), 2013
As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a promising new building block for silicon on insulator (SOI) circuits which is based on ...
The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gbls. We report a 40-Gb/s CDR fabricated in indium-phosphide heteroJunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in tum, reduces the circuit complexity (transistor count) and the vollage- eontrolled oscillator (YCO) requirements. The IC includes an on-chip _LC_ VCO, on-chip clock dividers to drive an extemal demultiplexer, and low-frequency PLL control loop and on-chip Umiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.
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