Indium phosphide

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Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. (Wikipedia.org)






Conferences related to Indium phosphide

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2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

CSICS is a technology and integrated circuit conference showcasing many of the finest achievements made in compound semiconductor technology and circuits. CSICS has grown to encompass GaAs, InP, GaN, SiGe, SiC, InSb, nano-scale CMOS, and graphene semiconductor technologies and their application to RF, mm-wave, high-speed, and energy conversion circuits and systems. Specific technical areas of interest include: Innovative device concepts in emerging technologies, Nitrides, InP, III-V on Si, Ge on Si, Graphene, Analog, RF, mixed-signal, mm-wave, THz circuit blocks and ICs in III-V, CMOS, SiGe BiCMOS, Power conversion circuits and technologies, Optoelectronic and photonic devices and ICs, System applications, Wireless handsets and base stations, Vehicular and military RADAR, High-speed digital systems, Fiber optics and photonics, Device and circuit modeling / EM and EDA tools, Thermal simulation and advanced packaging of highpower devices and ICs, Device and IC manufacturing processes

  • 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductores such as GaAs, SiGe and other materials. Coverage embraces all aspects of the technology from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductors such as GaAs, SiGe and other materials. Coverage embraces all aspects of the technology from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    The CSIC Symposium is the preeminent international forum on developments in integrated circuits using compound semiconductors such as GaAs, InP, GaN, SiGe and other materials. Coverage embraces all aspects of the technology, from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.

  • 2009 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

    CSICS is the preeminent international forum for developments in compound semiconductor integrated circuits, embracing GaAs, InP, GaN, SiGe, and more recently, millimeter wave CMOS technology. Coverage includes all aspects of the technology, from materials issues and device fabrication, through IC design and testing, high volume manufacturing, and system applications.


2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)

IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.


2012 4th Asia Symposium on Quality Electronic Design (ASQED 2012)

The 4th Asia Symposium on Quality Electronic Design (ASQED 2012) is the forth event organized by the International Society for Quality Electronic Design with technical sponsorship from several IEEE Societies. This event is being co-organized and managed by SHRDC. ASQED emphasizes innovations and the latest developments in System and IC Design, MEMS & NEMS, Bio and Nano Electronics, Photovoltaic (PV) Technology and Electronics, Semiconductor Process Technology, IC Packaging & PCB Technology, Test, and Manufacturing.

  • 2011 3rd Asia Symposium on Quality Electronic Design (ASQED 2011)

    ASQED bridges the gap among Electronic/Semiconductor ecosystem members providing electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality.

  • 2010 2nd Asia Symposium on Quality Electronic Design (ASQED 2010)

    ASQED 2010 strives to bridge the gap among electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design and intends to highlight and accelerate co-operation among the IC design, EDA, Semiconductor Process Technology, IC Packaging, Test, and Manufacturing communities.

  • 2009 1st Asia Symposium on Quality Electronic Design (ASQED 2009)

    ASQED 09 is aimed at bridging the gap among electronic design tools and processes, integrated circuit technologies, processes & manufacturing, to achieve design quality. The conference emphasizes a holistic approach toward electronic design and intends to highlight and accelerate cooperation among the IC Design, EDA, Semiconductor Process Technology, IC Packaging, Test, and Manufacturing communities.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2008 2nd Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2006 Nanotechnology Materials and Devices Conference (NMDC)


2009 Reliability of Compound Semiconductors Workshop (ROCS)

The ROCS Workshop brings together researchers, manufacturers and users of compound semiconductor materials, devices and circuits. Papers presenting latest results, including work-in-progress and new developments in all aspects of compound semiconductor quality and reliability are presented.

  • 2008 Reliability of Compound Semiconductors Workshop (ROCS)

    The ROCS workshop covers the reliability of electron devices fabricated from compound semiconductors including GaAs, InP, GaN, SiGe, SiC, InSb and related compounds and alloys (e.g. AlGaAs, GaSb). Topics include failure mechanisms, accelerated testing, radiation effects, thermal analysis, and quality assurance for HEMTs, PHEMTs, HBTs, MESFETs, HFETs and other devices.

  • 2007 Reliability of Compound Semiconductors Workshop (ROCS)

    The Reliability of Compound Semiconductors Workshop brings together researchers, manufacturers, & users of compound semiconductor devices to discuss the latest results and new developments in all phases of Compound Semiconductor Reliability. Original papers discussing work in progress and emerging device technologies are encouraged.



Periodicals related to Indium phosphide

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Spectrum, IEEE

IEEE Spectrum Magazine, the flagship publication of the IEEE, explores the development, applications and implications of new technologies. It anticipates trends in engineering, science, and technology, and provides a forum for understanding, discussion and leadership in these areas. IEEE Spectrum is the world's leading engineering and scientific magazine. Read by over 300,000 engineers worldwide, Spectrum provides international coverage of all ...




Xplore Articles related to Indium phosphide

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Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence

Wang, Chih Hsin; Neugroschel, Arnost Electron Devices, IEEE Transactions on, 1991

A novel nondestructive and contactless experimental method for measurement of the minority-carrier lifetime τ and surface recombination velocity S is presented. The method is based on the analysis of the photoluminescence (PL) time decay after laser excitation. The PL decay is analyzed in the frequency domain, which allows accurate extraction of both τ and S independently from the same measurement. ...


Photoluminescence peak wavelength behavior and luminescent efficiency of InAs/InGaAsP/InP quantum dots structure

Sato, R.; Fukuda, A.; Suzuki, T.; Imai, H. Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, 2012

We measured the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak wavelength and the luminescent efficiency. The polarization of the excitation light was changed between the p-polarization and the s-polarization. We analyzed the incident angle dependence of the PL peak shift and that of the luminescent efficiency for the each polarization. From the results, we ...


Butt-coupled waveguide-modulators by low temperature embedded CBE regrowth for high speed modulation (42 GHz) or large extinction ratio (>50 db)

Alexandre, F.; Jahan, D.; Devaux, F.; Ougazzaden, A.; Huet, F.; Vergnol, E.; Rao, E.V.K. Indium Phosphide and Related Materials, 1997., International Conference on, 1997

The monolithic integration of optical waveguides with various active photonic devices is an essential step towards the fabrication of complex photonic integrated circuits (PICs). This integration requires on the same substrate side by side planar areas of usually thick (around 3 μm) InP/GaInAsP/InP double heterostructure (DH) with wide differences in bandgap and doping level between the low loss waveguide and ...


Integrated hybrid III–V/Si laser and transmitter

Duan, G.; Jany, C.; Le liepvre, A.; Lamponi, M.; Accard, A.; Poingt, F.; Make, D.; Lelarge, F.; Messaoudene, S.; Bordel, D.; Fedeli, J.; Keyvaninia, S.; Roelkens, G.; Van Thourhout, D.; Thomson, D.J.; Gardes, F.Y.; Reed, G.T. Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, 2012

This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on a molecular wafer bonding technique, we develop hybrid III-V/Si lasers exhibiting new features: narrow III-V waveguide width of less than 3 μm, tapered III-V and silicon waveguides for mode transfer. These new features lead to good laser performances: a lasing threshold as low as 30mA ...


High Frequency Analysis of InP Transistors versus Temperature

Aniel, F.; Zerounian, N.; Almeyda, A.; Danelon, V.; Vernet, G.; Crozat, P.; Adde, R.; Harmand, J.-C.; Ladner, C. Solid-State Device Research Conference, 1997. Proceeding of the 27th European, 1997

None


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Educational Resources on Indium phosphide

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eLearning

Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence

Wang, Chih Hsin; Neugroschel, Arnost Electron Devices, IEEE Transactions on, 1991

A novel nondestructive and contactless experimental method for measurement of the minority-carrier lifetime τ and surface recombination velocity S is presented. The method is based on the analysis of the photoluminescence (PL) time decay after laser excitation. The PL decay is analyzed in the frequency domain, which allows accurate extraction of both τ and S independently from the same measurement. ...


Photoluminescence peak wavelength behavior and luminescent efficiency of InAs/InGaAsP/InP quantum dots structure

Sato, R.; Fukuda, A.; Suzuki, T.; Imai, H. Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, 2012

We measured the photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak wavelength and the luminescent efficiency. The polarization of the excitation light was changed between the p-polarization and the s-polarization. We analyzed the incident angle dependence of the PL peak shift and that of the luminescent efficiency for the each polarization. From the results, we ...


Butt-coupled waveguide-modulators by low temperature embedded CBE regrowth for high speed modulation (42 GHz) or large extinction ratio (>50 db)

Alexandre, F.; Jahan, D.; Devaux, F.; Ougazzaden, A.; Huet, F.; Vergnol, E.; Rao, E.V.K. Indium Phosphide and Related Materials, 1997., International Conference on, 1997

The monolithic integration of optical waveguides with various active photonic devices is an essential step towards the fabrication of complex photonic integrated circuits (PICs). This integration requires on the same substrate side by side planar areas of usually thick (around 3 μm) InP/GaInAsP/InP double heterostructure (DH) with wide differences in bandgap and doping level between the low loss waveguide and ...


Integrated hybrid III–V/Si laser and transmitter

Duan, G.; Jany, C.; Le liepvre, A.; Lamponi, M.; Accard, A.; Poingt, F.; Make, D.; Lelarge, F.; Messaoudene, S.; Bordel, D.; Fedeli, J.; Keyvaninia, S.; Roelkens, G.; Van Thourhout, D.; Thomson, D.J.; Gardes, F.Y.; Reed, G.T. Indium Phosphide and Related Materials (IPRM), 2012 International Conference on, 2012

This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on a molecular wafer bonding technique, we develop hybrid III-V/Si lasers exhibiting new features: narrow III-V waveguide width of less than 3 μm, tapered III-V and silicon waveguides for mode transfer. These new features lead to good laser performances: a lasing threshold as low as 30mA ...


High Frequency Analysis of InP Transistors versus Temperature

Aniel, F.; Zerounian, N.; Almeyda, A.; Danelon, V.; Vernet, G.; Crozat, P.; Adde, R.; Harmand, J.-C.; Ladner, C. Solid-State Device Research Conference, 1997. Proceeding of the 27th European, 1997

None


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