Indium

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Indium is a chemical element with chemical symbol In and atomic number 49. (Wikipedia.org)






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2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference


2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


2018 Asia-Pacific Microwave Conference (APMC)

The conference topics include microwave theory and techniques, and their related technologies and applications. They also include active devices and circuits, passive components, wireless systems, EMC and EMI, wireless power transfer and energy harvesting, antennas and propagation, and others.


2018 European Conference on Optical Communication (ECOC)

ECOC is the leading European conference in the field of optical communication, and one of the most prestigious and long-standing events in this field. Here, the latest progress in optical communication technologies will be reported in selected papers, keynotes, presentations and special symposia.Parallel to the scientific conference, the ECOC exhibition covers a wide range of optical communication products and services.Therefore, ECOC is open to a variety of interested participants like researchers and students, product developers, sales managers and telecommunication market developers. Every year this international forum attracts more than 1,000 scientists and researchers from research institutions and companies from across the world.


2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

Nanotechnology

  • 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

    IEEE Nano is one of the largest nanotechnology conferences in the world, directly sponsored by the IEEE Nanotechnology Council. IEEE NANO 2017 will provide an international forum for inspiration, interactions and exchange of ideas in a wide variety of branches of nanotechnology and nanoscience, through feature tutorials, workshops, and track sessions; plenary and invited talks from the world most renowned scientists and engineers; exhibition of software, hardware, equipment, materials, services and literature. It is a must for students, educators, researchers, scientists and engineers engaged in a wide range of nanotechnology fields and related applications, including electronic materials, photonics, biotechnology, medicine, alternative energy, environment and electronic devices.

  • 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

    IEEE-NANO is the flagship IEEE Nanotechnology conference. The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope is to bring together researchers, industry workers, entrepreneurs and funding agency leaders, in the general area of nanotechnology. IEEE NANO 2015 will provide a forum for the exchange of ideas, interaction, networking and collaboration for research and development in nanotechnology with special attention to the latest advances in nanotechnology

  • 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO)

    NANO is the flagship IEEE conference in Nanotechnology, which makes it a must for students, educators, researchers, scientists and engineers alike, working at the interface of nanotechnology and the many fields of electronic materials, photonics, bio-and medical devices, alternative energy, environmental protection, and multiple areas of current and future electrical and electronic applications. In each of these areas, NANO is the conference where practitioners will see nanotechnologies at work in both their own and related fields, from basic research and theory to industrial applications.

  • 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO)

    Nanoelectronics, nanomanufacturing, nanomaterials, nanodevice, nanofibration, nanofluidics, nano-bio-medicine, NEMS applications, nanocircuits, nanorobotics, nanomanipulation, nanosensors and actuators, nanophotonics, nanomagnetics, micro-to-nano-scale bridging

  • 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2011 10th Conference on Nanotechnology (IEEE-NANO)

    1. Nanomaterials and Nanostructures 2. Nanoelectronics and Nanodevices 3. Nanophotonics 4. Nano biotechnology and Nanomedicine 5. Nanorobotics and NEMS

  • 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO)

    All areas of nanotechnology within the areas of IEEE interest, as covered by the member societies of the Nanotechnology Council.

  • 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO)

    - More Moore, More than Moore and Beyond-CMOS - Nano-optics, Nano-Photonics, Plasmonics, Nano-optoelectronics - Nanofabrication, Nanolithography, Nano Manipulation, Nanotools - Nanomaterials and Nanostructures - Nanocarbon, Nanodiamond, Graphene and CNT Based Technologies - Nano-sensors and Nano Membranes - Modeling and Simulation - System Integration (Nano/Micro/Macro), NEMS, and Actuators - Molecular Electronics, Inorganic Nanowires, Nanocrystals, Quantum Dots

  • 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO)

    THE CONFERENCE FOCUSES ON THE APPLICATION OF NANOSCIENCE AND NANOTECHNOLOGY. SPECIFICALLY, BOTH ENGINEERING ISSUE RELATED TO NANOFABBRICATION , NANOELECTRONICS, SENSOR SYSTEMS WILL BE COVERED IN ADDITION FOUNDAMENTAL ISSUES SUCH AS MODELLING, SYNTHESIS, CARACTARIZATION ETC.

  • 2008 8th IEEE Conference on Nanotechnology (IEEE-NANO)

    This conference is the sequel to meetings held in Maui (2001), Washington (2002), San Francisco (2003), Munich (2004), Nagoya (2005), Cinncinati (2006), and Hong Kong (2007). The conference focus will be on engineering and business issues related to nanoelectronics, circuits, architectures, sensor systems, integration, reliability and manufacturing in addition to fundamental issues such as modeling, growth/synthesis, and characterization. The conference will feature plenary, invited, and contributed papers

  • 2007 7th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2006 6th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2005 5th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2004 4th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2003 3rd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2002 2nd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2001 1st IEEE Conference on Nanotechnology (IEEE-NANO)


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Periodicals related to Indium

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Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Indium

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Xplore Articles related to Indium

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1.3 mu m GaSb metal-semiconductor-metal photodetectors

[{u'author_order': 1, u'affiliation': u'Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA', u'full_name': u'S. Tiwari'}, {u'author_order': 2, u'affiliation': u'Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA', u'full_name': u'M. C. Hargis'}, {u'author_order': 3, u'full_name': u'Y. Wang'}, {u'author_order': 4, u'full_name': u'M. C. Teich'}, {u'author_order': 5, u'full_name': u'W. I. Wang'}] IEEE Photonics Technology Letters, 1992

Metal-semiconductor-metal photodetectors employing GaSb active regions and Al/sub 0.5/Ga/sub 0.5/Sb barrier-enhancing abrupt regions have been fabricated on InP substrates to assess the role of hole velocity and to compare with similar photodetectors made using Ga/sub 0.47/In/sub 0.53/As active region. Devices exhibit photoresponse in the 0.2-0.65 A/W range, dark currents of approximately=10/sup -6/ A at 300 K and approximately=10/sup -10/ A ...


Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layer structure for a monolithically planar integrated receiver OEIC

[{u'author_order': 1, u'affiliation': u'Siemens Res. Lab., Munchen, Germany', u'full_name': u'J. G. Bauer'}, {u'author_order': 2, u'affiliation': u'Siemens Res. Lab., Munchen, Germany', u'full_name': u'H. Albrecht'}, {u'author_order': 3, u'affiliation': u'Siemens Res. Lab., Munchen, Germany', u'full_name': u'L. Hoffmann'}, {u'author_order': 4, u'affiliation': u'Siemens Res. Lab., Munchen, Germany', u'full_name': u'D. Romer'}, {u'author_order': 5, u'affiliation': u'Siemens Res. Lab., Munchen, Germany', u'full_name': u'J. W. Walter'}] IEEE Photonics Technology Letters, 1992

A novel planar concept for the monolithic integration of a p-i-n photodiode (PD) and a junction field-effect transistor (JFET) is described. In an otherwise optimized InGaAs/InP PD layer sequence, grown by metalorganic vapor- phase epitaxy (MOVPE), a local Si- and Be-ion implantation has been performed to realize a thin n/sup +/-doped channel layer and a buried p-layer for the JFET. ...


Realization and wafer test of InGaAsP/InP DFB laser/monitor OEICs

[{u'author_order': 1, u'affiliation': u'SEL-ALCATEL Res. Centre, Stuttgart, Germany', u'full_name': u'K. Dutting'}, {u'author_order': 2, u'affiliation': u'SEL-ALCATEL Res. Centre, Stuttgart, Germany', u'full_name': u'W. Idler'}, {u'author_order': 3, u'affiliation': u'SEL-ALCATEL Res. Centre, Stuttgart, Germany', u'full_name': u'J. Bouayad-Amine'}, {u'author_order': 4, u'affiliation': u'SEL-ALCATEL Res. Centre, Stuttgart, Germany', u'full_name': u'H. P. Mayer'}, {u'author_order': 5, u'affiliation': u'SEL-ALCATEL Res. Centre, Stuttgart, Germany', u'full_name': u'K. Wunstel'}] IEEE Photonics Technology Letters, 1992

Wafer-testable distributed feedback (DFB) lasers and monolithically integrated monitor diodes are realized to replace the time consuming and expensive single-chip test procedure in semiconductor laser fabrication process. Laser- end facets and integrated monitor diodes are defined on 1.5- mu m InGaAsP/InP multiple quantum well (MQW) DFB laser wafers by reactive ion beam etching (RIBE). Using terminal electrical noise (TEN) measurement, ...


Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding

[{u'author_order': 1, u'affiliation': u'Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan', u'full_name': u'Simon Kondo'}, {u'author_order': 2, u'affiliation': u'Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan', u'full_name': u'Tadashi Okumura'}, {u'author_order': 3, u'affiliation': u'Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan', u'full_name': u'Ryo Osabe'}, {u'author_order': 4, u'affiliation': u'Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan', u'full_name': u'Nobuhiko Nishiyama'}, {u'author_order': 5, u'affiliation': u'Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 2-12-1-S9-5 O-okayama, Meguro-ku, Tokyo 152-8552, Japan', u'full_name': u'Shigehisa Arai'}] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), None

A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An ...


A study of microstrip antenna made of transparent ITO films

[{u'author_order': 1, u'affiliation': u'Department of EEIS, University of Science and Technology of China, Hefei, 230027, China', u'full_name': u'Guilin Sun'}, {u'author_order': 2, u'affiliation': u'Department of EEIS, University of Science and Technology of China, Hefei, 230027, China', u'full_name': u'Badar Muneer'}, {u'author_order': 3, u'affiliation': u'Department of EEIS, University of Science and Technology of China, Hefei, 230027, China', u'full_name': u'Qi Zhu'}] 2014 IEEE Antennas and Propagation Society International Symposium (APSURSI), None

In this paper, the optically transparent microstrip antenna made of transparent ITO (Indium Tin Oxide) films is investigated. The present transparent microstrip antenna comprises a thin sheet of quartz glass substrate with two conductive ITO film coatings and is fed through a coaxial probe. As an example, an X-band transparent microstrip antenna is designed, fabricated and measured. To discuss the ...


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IEEE-USA E-Books

  • Carrier Transport in High-mobility MOSFETs

    The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal-oxide-semiconductor field-effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi-classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi-ballistic transport in high- mobility MOSFETs-that is, the channel materials are III-V semiconductors, Ge and strained-Si, using the quantum-corrected Monte Carlo (MC) simulation. The chapter investigates the influence of quantum transport effects in ultrashort- channel III-V MOSFETs, based on a comparison between Wigner Monte Carlo (WMC) simulations, in which both quantum transport and carrier scattering effects can be fully incorporated, and considers conventional Boltzmann MC (BMC) simulation, in which no quantum transport effects. To accurately predict the electrical characteristics of nanoscale devices at normal conditions, device simulation must reliably consider both quantum and scattering effects in carrier transport.

  • OLED Devices

    While the fundamental device structure of OLEDs is simple in a sense, there are various types of OLED devices, which can be classified into various categories. From the point of view of emitting directions, OLED devices are classified as bottom emission, top emission, and both¿¿¿side emission (transparent). OLED devices are also classified into normal and inverted structures from the point of view of the stacking order of the electrodes.In addition, this chapter describes some useful technologies for practical OLED displays and lighting: white OLEDs, full¿¿¿color technologies, micro¿¿¿cavity structures, multi¿¿¿photon structures, and encapsulating technologies.

  • QoS Architectures

    This chapter contains sections titled: End‐to‐End Quality of Service: State‐of‐the‐Art Architectures for QoS Control "Technology"‐centric QoS Architecture IP‐centric QoS Architecture MPLS‐centric QoS Approach IPv6‐centric QoS Approach QoS Overall Architecture QoS Architectures Comparison

  • Basic Performance Characteristics of Wearable Antennas over a Wide Frequency Range

    This chapter describes the basic performance characteristics of wearable antennas for body-centric wireless communications over a wide frequency range. It overviews frequency dependence of the communication channels between 3 MHz and 3 GHz for wearable antennas mounted on the human body. A static human body model which has a posture of standing in free space is employed in order to characterize various frequency channels. The chapter discusses the electric field distributions around the human body, received open voltage, and power transmission efficiency with ideal matching circuits. It describes the influence of a surrounding environment (namely a metal floor and a wall close to the human body) on the electric field distribution and received open voltages around the human body. The chapter demonstrates two different scenarios to apply the basic results to practical situations: a commercialized wall-mounted identification (ID) tag system and a human vital data acquisition system using a dual-mode antenna.

  • OLED Materials

    OLED performance is largely dependent upon OLED materials. This chapter describes the classification of OLED materials and typical OLED materials.OLED materials are divided into two types ¿¿¿ vacuum evaporation type and solution type ¿¿¿ from a process point of view. Vacuum evaporation materials are usually small molecular materials, while solution type materials contain polymers, dendrimers, and small molecular materials. In addition, materials are also divided into fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescent (TADF) materials in terms of emission mechanisms. From the function point of view, OLED materials can be classified as hole injection material, hole transport material, emission material, host material in emissive layer, electron transport material, electron injection material, charge blocking material, etc.Anode and cathode materials are also important, so this chapter also describes anode and cathode materials.In addition, this chapter describes molecular orientations of organic materials because this also influences OLED characteristics.

  • New Technologies

    New technologies generate industrial innovations. This chapter describes several new technologies: non¿¿¿ITO transparent electrode, organic TFT, wet¿¿¿processed TFT, wet¿¿¿processed OLED, roll¿¿¿to¿¿¿roll equipment, and quantum dot. Most of these are compatible with wet processes and are flexible. This means that wet processes and flexible are strongly required and related to the generation change of organic electronics technologies because wet processes and flexible give new value to products and low cost.

  • Different Business Models



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