Indium

View this topic in
Indium is a chemical element with chemical symbol In and atomic number 49. (Wikipedia.org)






Conferences related to Indium

Back to Top

2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

  • 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2016 IEEE 66th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

    Premier components, packaging and technology

  • 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2010 IEEE 60th Electronic Components and Technology Conference (ECTC 2010)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009)

    Advanced packaging, electronic components & RF, emerging technologies, materials & processing, manufacturing technology, interconnections, quality & reliability, modeling & simulation, optoelectronics.


2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm)

electronics cooling


2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)

IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.



Periodicals related to Indium

Back to Top

Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.




Xplore Articles related to Indium

Back to Top

Nano-structured ZnO/ITO based SO<inf>2</inf> detector in room temperature operation

U. B. Memon; A. Ibrahim; S. P. Duttagupta; S. Roy 2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS), 2015

ZnO Nanostructured thin film of thickness 200nm was deposited on quartz by spray pyrolysis technique; further interdigitated ITO electrodes were fabricated by lithography. Compositional, surface morphology and electrical characterization of ZnO nanostructure thin film was done using X-ray photo electron spectroscopy (XPS), Secondary electron microscopy (SEM), and current- voltage (I-V) measurement technique respectively. SO2 sensing was done by using a ...


The coupled resonances of multiple dielectric resonator structures in metal waveguides

A. A. Trubin 2008 18th International Crimean Conference - Microwave & Telecommunication Technology, 2008

Presented in this paper are the results of theoretical analysis regarding natural oscillations of the systems with a number of coupled spherical dielectric resonators (DR) in flat and rectangular waveguides. It is demonstrated that these systems have frequency isolated high - Q coupling resonances, localized in the region of structure discontinuity. The phenomenon of pulses self-filtration in DR periodic structures ...


Analysis and characterization of traveling-wave electrode in electroabsorption modulator for radio-on-fiber application

Jiyoun Lim; Young-Shik Kang; Kwang-Seong Choi; Jong-Hyun Lee; Sung-Bock Kim; Jeha Kim Journal of Lightwave Technology, 2003

Comparing with a lumped electroabsorption modulator (EAM), we show the merits of a long EAM with traveling-wave electrode with high radio-frequency (RF) gain that could be used in high-frequency analog application. By terminating the RF output port with the characteristic impedance of 30 Ω, the device exhibited a large enhancement of 6 dB above 10 GHz in the electrical-to- optical ...


InP MIS structure with phosphorus-nitride film grown by photo-CVD

Y. H. Jeong; J. H. Lee; Y. T. Hong; Y. H. Bae International Conference on Indium Phosphide and Related Materials, 1990

Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub ...


Network optimization for DHT-based applications

Yi Sun; Y. Richard Yang; Xiaobing Zhang; Yang Guo; Jun Li; Kave Salamatian 2012 Proceedings IEEE INFOCOM, 2012

P2P platforms have been criticized because of the heavy strain that some P2P services can inflict on costly inter-domain links of network operators. It is therefore necessary to develop network optimization schemes for controlling the load generated by P2P platforms on an operator network. Previous focus on network optimization has been mostly on centralized tracker-based systems. However, in recent years ...


More Xplore Articles

Educational Resources on Indium

Back to Top

eLearning

Nano-structured ZnO/ITO based SO<inf>2</inf> detector in room temperature operation

U. B. Memon; A. Ibrahim; S. P. Duttagupta; S. Roy 2015 2nd International Symposium on Physics and Technology of Sensors (ISPTS), 2015

ZnO Nanostructured thin film of thickness 200nm was deposited on quartz by spray pyrolysis technique; further interdigitated ITO electrodes were fabricated by lithography. Compositional, surface morphology and electrical characterization of ZnO nanostructure thin film was done using X-ray photo electron spectroscopy (XPS), Secondary electron microscopy (SEM), and current- voltage (I-V) measurement technique respectively. SO2 sensing was done by using a ...


The coupled resonances of multiple dielectric resonator structures in metal waveguides

A. A. Trubin 2008 18th International Crimean Conference - Microwave & Telecommunication Technology, 2008

Presented in this paper are the results of theoretical analysis regarding natural oscillations of the systems with a number of coupled spherical dielectric resonators (DR) in flat and rectangular waveguides. It is demonstrated that these systems have frequency isolated high - Q coupling resonances, localized in the region of structure discontinuity. The phenomenon of pulses self-filtration in DR periodic structures ...


Analysis and characterization of traveling-wave electrode in electroabsorption modulator for radio-on-fiber application

Jiyoun Lim; Young-Shik Kang; Kwang-Seong Choi; Jong-Hyun Lee; Sung-Bock Kim; Jeha Kim Journal of Lightwave Technology, 2003

Comparing with a lumped electroabsorption modulator (EAM), we show the merits of a long EAM with traveling-wave electrode with high radio-frequency (RF) gain that could be used in high-frequency analog application. By terminating the RF output port with the characteristic impedance of 30 Ω, the device exhibited a large enhancement of 6 dB above 10 GHz in the electrical-to- optical ...


InP MIS structure with phosphorus-nitride film grown by photo-CVD

Y. H. Jeong; J. H. Lee; Y. T. Hong; Y. H. Bae International Conference on Indium Phosphide and Related Materials, 1990

Low-temperature (100-200 degrees C) growth of phosphorus nitride (P/sub 3/N/sub 5/) on an InP surface has been achieved using a mixture of PCl/sub 3/ and NH/sub 3/ gases by a direct photo-CVD. The films have a resistivity of 1*10/sup 14/ Omega -cm and a breakdown voltage of 1*10/sup 7/ V/cm. The minimum density of interface trap states for the Al-P/sub ...


Network optimization for DHT-based applications

Yi Sun; Y. Richard Yang; Xiaobing Zhang; Yang Guo; Jun Li; Kave Salamatian 2012 Proceedings IEEE INFOCOM, 2012

P2P platforms have been criticized because of the heavy strain that some P2P services can inflict on costly inter-domain links of network operators. It is therefore necessary to develop network optimization schemes for controlling the load generated by P2P platforms on an operator network. Previous focus on network optimization has been mostly on centralized tracker-based systems. However, in recent years ...


More eLearning Resources

IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Indium"

IEEE-USA E-Books

  • Clock and Data Recovery IC for 40Gb/s FiberOptic Receiver

    The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gbls. We report a 40-Gb/s CDR fabricated in indium-phosphide heteroJunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in tum, reduces the circuit complexity (transistor count) and the vollage- eontrolled oscillator (YCO) requirements. The IC includes an on-chip _LC_ VCO, on-chip clock dividers to drive an extemal demultiplexer, and low-frequency PLL control loop and on-chip Umiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.



Standards related to Indium

Back to Top

No standards are currently tagged "Indium"


Jobs related to Indium

Back to Top