Indium

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Indium is a chemical element with chemical symbol In and atomic number 49. (Wikipedia.org)






Conferences related to Indium

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2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

ICMMT2018 is intended to provide a broad international forum and nice opportunity for the scientists and engineers to present their new ideas and exchange information on research.


2018 International Semiconductor Laser Conference (ISLC)

The International Semiconductor Laser Conference has a long tradition as the leadinginternational conference where researchers and engineers from all over the world meet to shareand discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25thInternational Semiconductor Laser Conference will be held in Kobe Japan from 12- 15September 2016. The conference will include both oral and poster sessions of contributed andinvited papers, as well as a plenary session comprising reviews on a number of important andtimely topics. A rump session will feature special topics of current interest for discussion in amore relaxed and open atmosphere. In addition, attendees will be able to participate inworkshops on current hot topics during the first day of the conference. Technical results on allaspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics ofnew materials and structures to new and improved device concepts are covered.

  • 2016 International Semiconductor Laser Conference (ISLC)

    The International Semiconductor Laser Conference has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 25th International Semiconductor Laser Conference will be held in Kobe Japan from 12- 15 September 2016. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integrated devices, from basic physics of new materials and structures to new and improved device concepts are covered.

  • 2014 International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the latest developments in semiconductor lasers, amplifiers and LEDs. The 24th IEEE International Semiconductor Laser Conference will be held at the Melia Palas Atenea Hotel on the seafront in Palma on the beautiful island of Mallorca in the Mediterranean from 7 - 10 September 2014. The conference will include both oral and poster sessions of contributed and invited papers, as well as a plenary session comprising reviews on a number of important and timely topics. A rump session will feature special topics of current interest for discussion in a more relaxed and open atmosphere. In addition, attendees will be able to participate in workshops on current hot topics during the first day of the conference. Technical results on all aspects of semiconductor lasers, amplifiers, LEDs and integ

  • 2012 IEEE 23rd International Semiconductor Laser Conference (ISLC)

    The IEEE International Semiconductor Laser Conference (ISLC) has a long tradition as the leading international conference where researchers and engineers from all over the world meet to share and discuss the most recent developments in semiconductor lasers, amplifiers and LEDs. The 23rd IEEE International Semiconductor Laser Conference will be held at the San Diego Mission Valley Marriott, San Diego, California from 7-10 October 2012.

  • 2010 IEEE 22nd International Semiconductor Laser Conference (ISLC)

    The 22 nd IEEE International Semiconductor Laser Conference will be held at Ana Hotel Kyoto in Kyoto, Japan on 26-30 September, 2010. This biannual meeting has a long tradition of being the primary forum for the dissemination of the most recent scientific and technical achievements in the field of semiconductor lasers and related technologies. The conference will include oral and poster sessions of contributed papers, an invited session comprising reviews in a number of topics of current importance, and a r

  • 2008 IEEE 21st International Semiconductor Laser Conference (ISLC)

  • 2006 IEEE 20th International Semiconductor Laser Conference (ISLC)

  • 2004 IEEE 19th International Semiconductor Laser Conference (ISLC)

  • 2002 IEEE 18th International Semiconductor Laser Conference (ISLC)

  • 2000 IEEE 17th International Semiconductor Laser Conference (ISLC)

  • 1996 IEEE 15th International Semiconductor Laser Conference (ISLC)


2017 18th International Conference on Electronic Packaging Technology (ICEPT)

The conference will exchange the latest developments in the field of electronic packaging technology through exhibitions, special lectures, special reports, thematic forums, club reports, posters and other forms of experience


2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


2017 30th International Vacuum Nanoelectronics Conference (IVNC)

IVNC, the International Vacuum Nanoelectronics Conference series, is devoted to nanoscience and technology of vacuum electron sources and their applications. The conference aims to promote the understanding of physics, chemistry, electron emission and beam properties of nano-emitters based on various electron emission mechanisms, as well as the materials, growth, and fabrication technologies of novel cathodes and vacuum electronic devices. Established in 1988 by the founders of vacuum nanoelectronics, IVNC brings together an international body of scientists and engineers to present and discuss their latest researches in vacuum micro and nanoelectronics.


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Periodicals related to Indium

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Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


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Most published Xplore authors for Indium

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Xplore Articles related to Indium

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Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


Optical injection locking of InP/InGaAs HPT oscillator circuits for clock recovery and microwave photonics applications

H. Kamitsuna; T. Shibata; K. Kurishima; M. Ida The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

This paper overviews our recent results for the optically injection-locked oscillator (OILO) ICs using an opto-microwave compatible InP/InGaAs HPT whose layer and fabrication process are fully compatible with an ultrahigh-speed heterojunction bipolar transistor (HBT).


CGS-Thin Films Solar Cells on Transparent Back Contact

R. Caballero; Siebentritt; K. Sakurai; C. A. Kaufmann; M. Ch. Lux-steiner 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

The goal of this work is to fabricate and study wide gap CuGaSe 2 solar cells to be used as top cell of a mechanically stacked tandem device. CuGaSe2 (CGS) absorber thin films are prepared by co-evaporation in a three stage process onto Mo/soda-lime glass substrates and onto different transparent conductive oxides (TCOs): SnO2:F (FTO) and ln2O3:Sn (ITO). Laser light ...


Trimming the size of InAs/InP quantum dots grown by CBE

P. J. Poole; R. L. Williams; J. Lefebvre; J. P. McCaffrey; N. Rowell Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), 2000

We have used transmission electron microscopy and low temperature photoluminescence to study the growth by chemical beam epitaxy of self- assembled InAs/InP quantum dots. Square dots 30-40 nm in width were grown with a density of 1010 cm-2. By partially covering the dots with InP and exposing them to a phosphorus overpressure the mean height of the dots, and hence ...


IEEE Engineering in Medicine and Biology Group

IEEE Transactions on Biomedical Engineering, 1967

Provides a listing of current staff, committee members and society officers.


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Educational Resources on Indium

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eLearning

Design, Fabrication and Characterization of Low-Noise and High-Reliability Amorphous Silicon Gate Driver Circuit for Advanced FPD Applications

Chien-Hsueh Chiang; Yiming Li Journal of Display Technology, 2015

We report a novel design of amorphous silicon gate (ASG) driver circuit with not only low output noises but also improved reliability. The ASG circuits are made of thin-film transistors (TFTs) and integrated in the substrate glass. Unlike the most traditional ASG circuits, the proposed pull-down signals are complementary with lower frequency to discharge the critical nodes in the proposed ...


Optical injection locking of InP/InGaAs HPT oscillator circuits for clock recovery and microwave photonics applications

H. Kamitsuna; T. Shibata; K. Kurishima; M. Ida The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003., 2003

This paper overviews our recent results for the optically injection-locked oscillator (OILO) ICs using an opto-microwave compatible InP/InGaAs HPT whose layer and fabrication process are fully compatible with an ultrahigh-speed heterojunction bipolar transistor (HBT).


CGS-Thin Films Solar Cells on Transparent Back Contact

R. Caballero; Siebentritt; K. Sakurai; C. A. Kaufmann; M. Ch. Lux-steiner 2006 IEEE 4th World Conference on Photovoltaic Energy Conference, 2006

The goal of this work is to fabricate and study wide gap CuGaSe 2 solar cells to be used as top cell of a mechanically stacked tandem device. CuGaSe2 (CGS) absorber thin films are prepared by co-evaporation in a three stage process onto Mo/soda-lime glass substrates and onto different transparent conductive oxides (TCOs): SnO2:F (FTO) and ln2O3:Sn (ITO). Laser light ...


Trimming the size of InAs/InP quantum dots grown by CBE

P. J. Poole; R. L. Williams; J. Lefebvre; J. P. McCaffrey; N. Rowell Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), 2000

We have used transmission electron microscopy and low temperature photoluminescence to study the growth by chemical beam epitaxy of self- assembled InAs/InP quantum dots. Square dots 30-40 nm in width were grown with a density of 1010 cm-2. By partially covering the dots with InP and exposing them to a phosphorus overpressure the mean height of the dots, and hence ...


IEEE Engineering in Medicine and Biology Group

IEEE Transactions on Biomedical Engineering, 1967

Provides a listing of current staff, committee members and society officers.


More eLearning Resources

IEEE.tv Videos

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IEEE-USA E-Books

  • OLED Materials

    OLED performance is largely dependent upon OLED materials. This chapter describes the classification of OLED materials and typical OLED materials.OLED materials are divided into two types ¿¿¿ vacuum evaporation type and solution type ¿¿¿ from a process point of view. Vacuum evaporation materials are usually small molecular materials, while solution type materials contain polymers, dendrimers, and small molecular materials. In addition, materials are also divided into fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescent (TADF) materials in terms of emission mechanisms. From the function point of view, OLED materials can be classified as hole injection material, hole transport material, emission material, host material in emissive layer, electron transport material, electron injection material, charge blocking material, etc.Anode and cathode materials are also important, so this chapter also describes anode and cathode materials.In addition, this chapter describes molecular orientations of organic materials because this also influences OLED characteristics.

  • QoS Architectures

    This chapter contains sections titled: End‐to‐End Quality of Service: State‐of‐the‐Art Architectures for QoS Control "Technology"‐centric QoS Architecture IP‐centric QoS Architecture MPLS‐centric QoS Approach IPv6‐centric QoS Approach QoS Overall Architecture QoS Architectures Comparison

  • OLED Devices

    While the fundamental device structure of OLEDs is simple in a sense, there are various types of OLED devices, which can be classified into various categories. From the point of view of emitting directions, OLED devices are classified as bottom emission, top emission, and both¿¿¿side emission (transparent). OLED devices are also classified into normal and inverted structures from the point of view of the stacking order of the electrodes.In addition, this chapter describes some useful technologies for practical OLED displays and lighting: white OLEDs, full¿¿¿color technologies, micro¿¿¿cavity structures, multi¿¿¿photon structures, and encapsulating technologies.

  • Basic Performance Characteristics of Wearable Antennas over a Wide Frequency Range

    This chapter describes the basic performance characteristics of wearable antennas for body-centric wireless communications over a wide frequency range. It overviews frequency dependence of the communication channels between 3 MHz and 3 GHz for wearable antennas mounted on the human body. A static human body model which has a posture of standing in free space is employed in order to characterize various frequency channels. The chapter discusses the electric field distributions around the human body, received open voltage, and power transmission efficiency with ideal matching circuits. It describes the influence of a surrounding environment (namely a metal floor and a wall close to the human body) on the electric field distribution and received open voltages around the human body. The chapter demonstrates two different scenarios to apply the basic results to practical situations: a commercialized wall-mounted identification (ID) tag system and a human vital data acquisition system using a dual-mode antenna.

  • Different Business Models

    This chapter contains sections titled: * Business Process Outsourcing * Information Technology Outsourcing * Global Software Engineering * Netsourcing and Application Service Provisioning * Software Sourcing * Open Source Software

  • New Technologies

    New technologies generate industrial innovations. This chapter describes several new technologies: non¿¿¿ITO transparent electrode, organic TFT, wet¿¿¿processed TFT, wet¿¿¿processed OLED, roll¿¿¿to¿¿¿roll equipment, and quantum dot. Most of these are compatible with wet processes and are flexible. This means that wet processes and flexible are strongly required and related to the generation change of organic electronics technologies because wet processes and flexible give new value to products and low cost.

  • Carrier Transport in High¿¿¿mobility MOSFETs

    The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal¿¿¿oxide¿¿¿semiconductor field¿¿¿effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi¿¿¿classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi¿¿¿ballistic transport in high¿¿¿mobility MOSFETs ¿¿¿ that is, the channel materials are III¿¿¿V semiconductors, Ge and strained¿¿¿Si, using the quantum¿¿¿corrected Monte Carlo (MC) simulation. The chapter investigates the influence of quantum transport effects in ultrashort¿¿¿channel III¿¿¿V MOSFETs, based on a comparison between Wigner Monte Carlo (WMC) simulations, in which both quantum transport and carrier scattering effects can be fully incorporated, and considers conventional Boltzmann MC (BMC) simulation, in which no quantum transport effects. To accurately predict the electrical characteristics of nanoscale devices at normal conditions, device simulation must reliably consider both quantum and scattering effects in carrier transport.



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