Indium

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Indium is a chemical element with chemical symbol In and atomic number 49. (Wikipedia.org)






Conferences related to Indium

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2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

  • 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2016 IEEE 66th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

    Premier components, packaging and technology

  • 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2010 IEEE 60th Electronic Components and Technology Conference (ECTC 2010)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009)

    Advanced packaging, electronic components & RF, emerging technologies, materials & processing, manufacturing technology, interconnections, quality & reliability, modeling & simulation, optoelectronics.


2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2013 IEEE/CPMT 29th Semiconductor Thermal Measurement & Management Symposium (SemiTherm)

electronics cooling


2012 24th International Conference on Indium Phosphide & Related Materials (IPRM)

IPRM-2012 is the 24th event of this highly renowned conference series established in 1989. The conference will continue the tradition of bringing together scientists from academia and industry to share recent developments in the field. Major conference topics will include advances in materials, devices, processing, and applications in telecom and datacom, VLSI, defense, sensors and imaging. A new topical area of III-V MOS devices will be addressed to highlight the rapidly growing importance of this technology.



Periodicals related to Indium

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Indium

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Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length

Yuh-Renn Wu; M. Singh; J. Singh IEEE Transactions on Electron Devices, 2006

This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistors (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, fT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices ...


AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

L. DiNetta; G. H. Negley; M. H. Hannon; J. R. Cummings; J. B. McNeely; A. M. Barnett IEEE Conference on Photovoltaic Specialists, 1990

Free-standing, transparent, tunables bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four-terminal tandem stack solar cell. The device has 1.8 eV top solar cells with efficiencies of 18% (100X, AM0), which would yield stack efficiencies of 31% (100X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-x As/Si mechanically stacked two-junction solar cell ...


Fiber-optic pH sensors fabrication based on selective deposition of Neutral Red

Carlos R. Zamarreño; Miguel Hernáez; Ignacio R. Matías; Francisco J. Arregui 2009 IEEE Sensors, 2009

In this work, a novel application of the electric field directed layer-by- layer self assembly (EFDLA) selective deposition method for the fabrication of optical fiber pH sensors is presented. Here, indium tin oxide (ITO) coated optical fibers have been fabricated via a dip-coating deposition method. These fibers are used as electrodes in the EFDLA protocol in order to deposit selectively ...


Mechanically stacked two-tandem concentrator solar cell concept

B. Beaumont; P. Garabedian; G. Nataf; J. -C. Guillaume; P. Gilbart; C. Verie IEEE Conference on Photovoltaic Specialists, 1990

Modeling results and some data from experiments currently under study for a new photovoltaic (PV) structure representing the tractable device adaptation of a quadrispectral concept proposed some years ago are presented. Based on a four-band solar spectrum division, it combines a couple of two-bandgap monolithic tandem cells grown, respectively, on GaAs and InP in a mechanical stacking configuration. In the ...


A multiprocessor approach for meeting the processing requirements for OSI

M. R. Ito; L. Y. Takeuchi; G. W. Neufeld IEEE Journal on Selected Areas in Communications, 1993

To meet the increased communication processing requirements of high-speed networks, a multiprocessing network interface is considered for processing multiple layers of a communication protocol stack. In particular, the processing of the open systems interconnection (OSI) layers 2 to 6 on the network interface are considered. OSI processing is computationally expensive because of the inclusion of the transfer syntax conversion at ...


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Educational Resources on Indium

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eLearning

Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length

Yuh-Renn Wu; M. Singh; J. Singh IEEE Transactions on Electron Devices, 2006

This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistors (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, fT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices ...


AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

L. DiNetta; G. H. Negley; M. H. Hannon; J. R. Cummings; J. B. McNeely; A. M. Barnett IEEE Conference on Photovoltaic Specialists, 1990

Free-standing, transparent, tunables bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four-terminal tandem stack solar cell. The device has 1.8 eV top solar cells with efficiencies of 18% (100X, AM0), which would yield stack efficiencies of 31% (100X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-x As/Si mechanically stacked two-junction solar cell ...


Fiber-optic pH sensors fabrication based on selective deposition of Neutral Red

Carlos R. Zamarreño; Miguel Hernáez; Ignacio R. Matías; Francisco J. Arregui 2009 IEEE Sensors, 2009

In this work, a novel application of the electric field directed layer-by- layer self assembly (EFDLA) selective deposition method for the fabrication of optical fiber pH sensors is presented. Here, indium tin oxide (ITO) coated optical fibers have been fabricated via a dip-coating deposition method. These fibers are used as electrodes in the EFDLA protocol in order to deposit selectively ...


Mechanically stacked two-tandem concentrator solar cell concept

B. Beaumont; P. Garabedian; G. Nataf; J. -C. Guillaume; P. Gilbart; C. Verie IEEE Conference on Photovoltaic Specialists, 1990

Modeling results and some data from experiments currently under study for a new photovoltaic (PV) structure representing the tractable device adaptation of a quadrispectral concept proposed some years ago are presented. Based on a four-band solar spectrum division, it combines a couple of two-bandgap monolithic tandem cells grown, respectively, on GaAs and InP in a mechanical stacking configuration. In the ...


A multiprocessor approach for meeting the processing requirements for OSI

M. R. Ito; L. Y. Takeuchi; G. W. Neufeld IEEE Journal on Selected Areas in Communications, 1993

To meet the increased communication processing requirements of high-speed networks, a multiprocessing network interface is considered for processing multiple layers of a communication protocol stack. In particular, the processing of the open systems interconnection (OSI) layers 2 to 6 on the network interface are considered. OSI processing is computationally expensive because of the inclusion of the transfer syntax conversion at ...


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IEEE-USA E-Books

  • Clock and Data Recovery IC for 40Gb/s FiberOptic Receiver

    The integrated clock and data recovery (CDR) circuit is a key element for broad-band optical communication systems at 40 Gbls. We report a 40-Gb/s CDR fabricated in indium-phosphide heteroJunction bipolar transistor (InP HBT) technology using a robust architecture of a phase-locked loop (PLL) with a digital early-late phase detector. The faster InP HBT technology allows the digital phase detector to operate at the full data rate of 40 Gb/s. This, in tum, reduces the circuit complexity (transistor count) and the vollage- eontrolled oscillator (YCO) requirements. The IC includes an on-chip _LC_ VCO, on-chip clock dividers to drive an extemal demultiplexer, and low-frequency PLL control loop and on-chip Umiting amplifier buffers for the data and clock I/O. To our knowledge, this is the first demonstration of a mixed-signal IC operating at the clock rate of 40 GHz. We also describe the chip architecture and measurement results.



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