Indium

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Indium is a chemical element with chemical symbol In and atomic number 49. (Wikipedia.org)






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2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE 58th Conference on Decision and Control (CDC)

The CDC is recognized as the premier scientific and engineering conference dedicated to the advancement of the theory and practice of systems and control. The CDC annually brings together an international community of researchers and practitioners in the field of automatic control to discuss new research results, perspectives on future developments, and innovative applications relevant to decision making, systems and control, and related areas.The 58th CDC will feature contributed and invited papers, as well as workshops and may include tutorial sessions.The IEEE CDC is hosted by the IEEE Control Systems Society (CSS) in cooperation with the Society for Industrial and Applied Mathematics (SIAM), the Institute for Operations Research and the Management Sciences (INFORMS), the Japanese Society for Instrument and Control Engineers (SICE), and the European Union Control Association (EUCA).


2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference


2019 IEEE Photonics Conference (IPC)

The IEEE Photonics Conference, previously known as the IEEE LEOS Annual Meeting, offers technical presentations by the world’s leading scientists and engineers in the areas of lasers, optoelectronics, optical fiber networks, and associated lightwave technologies and applications. It also features compelling plenary talks on the industry’s most important issues, weekend events aimed at students and young photonics professionals, and a manufacturer’s exhibition.


2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)

The Topical Meetings of the IEEE Photonics Society are the premier conference series for exciting, new areas in photonic science, technology, and applications; creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


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Periodicals related to Indium

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Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Broadcasting, IEEE Transactions on

Broadcast technology, including devices, equipment, techniques, and systems related to broadcast technology, including the production, distribution, transmission, and propagation aspects.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


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Most published Xplore authors for Indium

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Xplore Articles related to Indium

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Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f<sub>T</sub>and 2 S/mm extrinsic transconductance"

[] IEEE Electron Device Letters, 1999

Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.


Characteristics of Inaias/ingaasp Quantum-Well Hemts

[{u'author_order': 1, u'affiliation': u'Bellcore, Red Bank, NJ', u'authorUrl': u'https://ieeexplore.ieee.org/author/37334767100', u'full_name': u'W-P. Hong', u'id': 37334767100}, {u'author_order': 2, u'authorUrl': u'https://ieeexplore.ieee.org/author/37277368200', u'full_name': u'R. Bhat', u'id': 37277368200}, {u'author_order': 3, u'authorUrl': u'https://ieeexplore.ieee.org/author/37382405400', u'full_name': u'J.R. Hayes', u'id': 37382405400}, {u'author_order': 4, u'authorUrl': u'https://ieeexplore.ieee.org/author/37276511800', u'full_name': u'G.K. Chang', u'id': 37276511800}, {u'author_order': 5, u'authorUrl': u'https://ieeexplore.ieee.org/author/38225412400', u'full_name': u'C. Nguyen', u'id': 38225412400}, {u'author_order': 6, u'authorUrl': u'https://ieeexplore.ieee.org/author/37344382200', u'full_name': u'M. Koza', u'id': 37344382200}] [1991] 49th Annual Device Research Conference Digest, 1991

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Suppression of the kink effect in InGaAs/InAlAs HEMTs grown by MBE by optimizing the InAlAs buffer layer

[{u'author_order': 1, u'affiliation': u'Found. for Res. & Technol.-Hellas, Crete, Greece', u'authorUrl': u'https://ieeexplore.ieee.org/author/37296284400', u'full_name': u'A. Georgakilas', u'id': 37296284400}, {u'author_order': 2, u'affiliation': u'Found. for Res. & Technol.-Hellas, Crete, Greece', u'authorUrl': u'https://ieeexplore.ieee.org/author/37331880600', u'full_name': u'K. Zekentes', u'id': 37331880600}, {u'author_order': 3, u'affiliation': u'Found. for Res. & Technol.-Hellas, Crete, Greece', u'full_name': u'N. Kornilios'}, {u'author_order': 4, u'affiliation': u'Found. for Res. & Technol.-Hellas, Crete, Greece', u'authorUrl': u'https://ieeexplore.ieee.org/author/38302714200', u'full_name': u'G. Halkias', u'id': 38302714200}, {u'author_order': 5, u'affiliation': u'Found. for Res. & Technol.-Hellas, Crete, Greece', u'authorUrl': u'https://ieeexplore.ieee.org/author/37316577700', u'full_name': u'A. Dimoulas', u'id': 37316577700}, {u'author_order': 6, u'affiliation': u'Found. for Res. & Technol.-Hellas, Crete, Greece', u'authorUrl': u'https://ieeexplore.ieee.org/author/37067407800', u'full_name': u'A. Christou', u'id': 37067407800}, {u'author_order': 7, u'authorUrl': u'https://ieeexplore.ieee.org/author/37312479800', u'full_name': u'F. Peiro', u'id': 37312479800}, {u'author_order': 8, u'authorUrl': u'https://ieeexplore.ieee.org/author/37315000800', u'full_name': u'A. Cornet', u'id': 37315000800}, {u'author_order': 9, u'authorUrl': u'https://ieeexplore.ieee.org/author/37284553800', u'full_name': u'T. Benyattou', u'id': 37284553800}, {u'author_order': 10, u'authorUrl': u'https://ieeexplore.ieee.org/author/37376752100', u'full_name': u'A. Tabata', u'id': 37376752100}, {u'author_order': 11, u'authorUrl': u'https://ieeexplore.ieee.org/author/37283136600', u'full_name': u'G. Guillot', u'id': 37283136600}] LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels, 1992

The authors have examined the effects of InP substrate preparation and InAlAs growth temperature on the structural, electrical. and optical properties of In/sub 0.52/Al/sub 0.48/As layers grown on InP substrate. The substrate cleanliness affects the InAlAs growth mode while the growth temperature determines the kinetics of growth. It is concluded that the optimum InAlAs buffer layers have to be grown ...


High Gain Resonant Ingaaias/ingaas Heterojunction Bipolar Phototransistor Grown by Molecular Beam Epitaxy

[{u'author_order': 1, u'affiliation': u'AT&T Bell Laboratories, Holmdel, NJ', u'authorUrl': u'https://ieeexplore.ieee.org/author/37270504800', u'full_name': u'A. Dodabalapur', u'id': 37270504800}, {u'author_order': 2, u'authorUrl': u'https://ieeexplore.ieee.org/author/37366701000', u'full_name': u'T.Y. Chang', u'id': 37366701000}] [1991] 49th Annual Device Research Conference Digest, 1991

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Investigation and modeling of impact ionization with regard to the RF and noise behavior of HFET

[{u'author_order': 1, u'affiliation': u'Dept. of Solid-State Electron., Gerhard-Mercator-Univ., Duisburg, Germany', u'authorUrl': u'https://ieeexplore.ieee.org/author/37285082200', u'full_name': u'R. Reuter', u'id': 37285082200}, {u'author_order': 2, u'authorUrl': u'https://ieeexplore.ieee.org/author/37324109300', u'full_name': u'M. Agethen', u'id': 37324109300}, {u'author_order': 3, u'authorUrl': u'https://ieeexplore.ieee.org/author/37298755300', u'full_name': u'U. Auer', u'id': 37298755300}, {u'author_order': 4, u'authorUrl': u'https://ieeexplore.ieee.org/author/37268591700', u'full_name': u'S. van Waasen', u'id': 37268591700}, {u'author_order': 5, u'authorUrl': u'https://ieeexplore.ieee.org/author/37285946100', u'full_name': u'D. Peters', u'id': 37285946100}, {u'author_order': 6, u'authorUrl': u'https://ieeexplore.ieee.org/author/37299919000', u'full_name': u'W. Brockerhoff', u'id': 37299919000}, {u'author_order': 7, u'authorUrl': u'https://ieeexplore.ieee.org/author/37266355400', u'full_name': u'F.-J. Tegude', u'id': 37266355400}] IEEE Transactions on Microwave Theory and Techniques, 1997

A new small-signal and noise-equivalent circuit for heterostructure field- effect transistors (HFET's), including the influence of impact-ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model is demonstrated by bias-dependent investigations of the high-frequency (HF) (45 MHz up to 40 GHz) and noise behavior (2 GHz up to 18 GHz) of the InAlAs/InGaAs/InP HFET. ...


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  • Resonant Games

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  • OLED Materials

    OLED performance is largely dependent upon OLED materials. This chapter describes the classification of OLED materials and typical OLED materials.OLED materials are divided into two types – vacuum evaporation type and solution type – from a process point of view. Vacuum evaporation materials are usually small molecular materials, while solution type materials contain polymers, dendrimers, and small molecular materials. In addition, materials are also divided into fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescent (TADF) materials in terms of emission mechanisms. From the function point of view, OLED materials can be classified as hole injection material, hole transport material, emission material, host material in emissive layer, electron transport material, electron injection material, charge blocking material, etc.Anode and cathode materials are also important, so this chapter also describes anode and cathode materials.In addition, this chapter describes molecular orientations of organic materials because this also influences OLED characteristics.

  • Carrier Transport in High-mobility MOSFETs

    The remarkable advancement of LSI circuit technology has been primarily based on the downsizing of metal-oxide-semiconductor field-effect transistor (MOSFET). This chapter examines practical advantages of the new channel materials using semi-classical MC and quantum mechanical Wigner MC simulations, where it considers scattering effects, quantum mechanical effects and new device structure. It discusses the quasi-ballistic transport in high- mobility MOSFETs-that is, the channel materials are III-V semiconductors, Ge and strained-Si, using the quantum-corrected Monte Carlo (MC) simulation. The chapter investigates the influence of quantum transport effects in ultrashort- channel III-V MOSFETs, based on a comparison between Wigner Monte Carlo (WMC) simulations, in which both quantum transport and carrier scattering effects can be fully incorporated, and considers conventional Boltzmann MC (BMC) simulation, in which no quantum transport effects. To accurately predict the electrical characteristics of nanoscale devices at normal conditions, device simulation must reliably consider both quantum and scattering effects in carrier transport.

  • Appendix I: Interviews

    We have greatly benefitted from oral history interviews with Stanford Ovshinsky, as well as with his family, friends, colleagues, and former staff. LH denotes Lillian Hoddeson, and PG denotes Peter Garrett. Transcripts and voice files of the interviews listed below are in the possession of Hoddeson and will be added to the Ovshinsky papers.

  • 13 Last Days

    Stan's birthday on November 24th had always been an important family event. To honor the tradition, and also highlight Stan's ninetieth birthday, Rosa planned a huge celebration. Rather than wait until late November, when many of those to be invited would want to be with their families for Thanksgiving, she decided to hold the party over Labor Day weekend, when the warmer weather would also allow having the party outdoors. In May, Freya Saito and Georgina Fontana began emailing guests to save the date of Sunday, September 2, 2012. Simply finding the addresses of Stan's many friends and colleagues was a huge job. Full invitations went out in July.1

  • Different Business Models

    This chapter contains sections titled: * Business Process Outsourcing * Information Technology Outsourcing * Global Software Engineering * Netsourcing and Application Service Provisioning * Software Sourcing * Open Source Software ]]>

  • Appendix A: Refractive Index of InGaAsP

  • New Technologies

    New technologies generate industrial innovations. This chapter describes several new technologies: non‐ITO transparent electrode, organic TFT, wet‐processed TFT, wet‐processed OLED, roll‐to‐roll equipment, and quantum dot. Most of these are compatible with wet processes and are flexible. This means that wet processes and flexible are strongly required and related to the generation change of organic electronics technologies because wet processes and flexible give new value to products and low cost.

  • Basic Performance Characteristics of Wearable Antennas over a Wide Frequency Range

    This chapter describes the basic performance characteristics of wearable antennas for body-centric wireless communications over a wide frequency range. It overviews frequency dependence of the communication channels between 3 MHz and 3 GHz for wearable antennas mounted on the human body. A static human body model which has a posture of standing in free space is employed in order to characterize various frequency channels. The chapter discusses the electric field distributions around the human body, received open voltage, and power transmission efficiency with ideal matching circuits. It describes the influence of a surrounding environment (namely a metal floor and a wall close to the human body) on the electric field distribution and received open voltages around the human body. The chapter demonstrates two different scenarios to apply the basic results to practical situations: a commercialized wall-mounted identification (ID) tag system and a human vital data acquisition system using a dual-mode antenna.

  • QoS Architectures

    This chapter contains sections titled:End‐to‐End Quality of Service: State‐of‐the‐ArtArchitectures for QoS Control“Technology”‐centric QoS ArchitectureIP‐centric QoS ArchitectureMPLS‐centric QoS ApproachIPv6‐centric QoS ApproachQoS Overall ArchitectureQoS Architectures Comparison



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