Hall effect

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The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. (Wikipedia.org)






Conferences related to Hall effect

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2014 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to: Measurement Science & Education, Measurement Systems, Measurement Data Acquisition, Measurements of Physical Quantities, and Measurement Applications.

  • 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2012 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The conference focuses on research, development and applications in the field of instrumentation and measurement science and technology. The list of program topics includes but is not limited to Fundamentals, Sensors & Transducers, Measurements of Physical Qualities, Measurement Systems, Measurement Applications, Signal & Image Processing, and Industrial Applications.

  • 2011 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2010 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2010

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2009 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2009

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT-DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2008 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2008

    The conference focuses on all aspects of instrumentation and measurement science and technology - research, development and applications. The list of program topics includes but is not limited to measurement science & education, measurement systems, measurement data acquisition, measurements of physical quantities, and measurement applications.

  • 2007 IEEE Instrumentation & Measurement Technology Conference - IMTC 2007

  • 2006 IEEE Instrumentation & Measurement Technology Conference - IMTC 2006


2013 IEEE 7th International Conference on Intelligent Data Acquisition and Advanced Computing Systems: Technology and Applications (IDAACS)

The main goal of the IDAACS is to provide a forum for high quality reports on the state-of-the-art theory, technology and applications of intelligent data acquisition and advanced computer systems as used in measurement, automation, and scientific research, in industry and in business. The importance of IDAACS is its vision to establish scientific contacts between research teams and scientists from different countries for future joint research collaborations.IDAACS provides the opportunity to discuss topics with colleagues from different spheres such as academia, industry, instrumentation and computer manufacturing companies, public and private research institutions and organizations. IDAACS with its truly international character promotes the development of relationships between former Eastern and Western Europe, and with countries from all parts of the globe.



Periodicals related to Hall effect

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Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


Sensors Journal, IEEE

The Field of Interest of the IEEE Sensors Journal is the science and applications of sensing phenomena, including theory, design, and application of devices for sensing and transducing physical, chemical, and biological phenomena. The emphasis is on the electronics, physics, biology, and intelligence aspects of sensors and integrated sensor-actuators. (IEEE Guide for Authors) (The fields of interest of the IEEE ...



Most published Xplore authors for Hall effect

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Xplore Articles related to Hall effect

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Reproducibility of the quantum hall effect in GaAs/AlGaAs two dimensional electron gas

F. Schopfer; W. Poirier 2008 Conference on Precision Electromagnetic Measurements Digest, 2008

This paper describes an experiment which shows that the integer quantum Hall effect implemented in GaAs/AIGaAs Hall bars mounted as a Wheatstone bridge is reproducible with a relative uncertainty of less than 4 parts in 1011.


Detection of Magnetic Flux in Air Gap of Linear Type SR Motor by Using Hall Effect of Amorphous Ribbon

K. Takayama; Y. Takasaki; T. Sonoda; R. Ueda IEEE Translation Journal on Magnetics in Japan, 1988

First Page of the Article ![](/xploreAssets/images/absImages/04563786.png)


Hall-effect devices

M. Epstein IEEE Transactions on Magnetics, 1967

The Hall effect and magnetoresistance in solids is discussed in terms of the Lorentz force on current carriers. The advances in thin-film high-mobility semiconductors are related to the increased utilization and developments of Hall-effect devices. The design of such devices depends, in most cases, on the associated magnetic structures. Several examples of applications of Hall- effect and magnetoresistive devices to ...


Improved uniformity of SI-VB GaAs by annealing

B. E. Freidenreich; K. D. Bronsema; Z. Korzeniowski; B. Nykiel; D. Francomano; J. Moore; R. E. Kremer Proceedings of the 7th Conference on Semi-insulating III-V Materials,, 1992

First Page of the Article ![](/xploreAssets/images/absImages/00752684.png)


Effects of irradiation on Hall probe sensitivity

B. Kulke; R. Frye; F. Penko Particle Accelerator Conference, 1989. Accelerator Science and Technology., Proceedings of the 1989 IEEE, 1989

Four Hall probes from two different manufacturers were exposed to increasing amounts of radiation at the Advanced Test Accelerator and were compared periodically to a nuclear magnetic resonance (NMR) gaussmeter at magnetic field values of 2 to 8 kG. The radiation was primarily bremsstrahlung from a 45-MeV electron beam. The probes were mounted near a beam dump, along with LiF ...


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Educational Resources on Hall effect

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eLearning

Reproducibility of the quantum hall effect in GaAs/AlGaAs two dimensional electron gas

F. Schopfer; W. Poirier 2008 Conference on Precision Electromagnetic Measurements Digest, 2008

This paper describes an experiment which shows that the integer quantum Hall effect implemented in GaAs/AIGaAs Hall bars mounted as a Wheatstone bridge is reproducible with a relative uncertainty of less than 4 parts in 1011.


Detection of Magnetic Flux in Air Gap of Linear Type SR Motor by Using Hall Effect of Amorphous Ribbon

K. Takayama; Y. Takasaki; T. Sonoda; R. Ueda IEEE Translation Journal on Magnetics in Japan, 1988

First Page of the Article ![](/xploreAssets/images/absImages/04563786.png)


Hall-effect devices

M. Epstein IEEE Transactions on Magnetics, 1967

The Hall effect and magnetoresistance in solids is discussed in terms of the Lorentz force on current carriers. The advances in thin-film high-mobility semiconductors are related to the increased utilization and developments of Hall-effect devices. The design of such devices depends, in most cases, on the associated magnetic structures. Several examples of applications of Hall- effect and magnetoresistive devices to ...


Improved uniformity of SI-VB GaAs by annealing

B. E. Freidenreich; K. D. Bronsema; Z. Korzeniowski; B. Nykiel; D. Francomano; J. Moore; R. E. Kremer Proceedings of the 7th Conference on Semi-insulating III-V Materials,, 1992

First Page of the Article ![](/xploreAssets/images/absImages/00752684.png)


Effects of irradiation on Hall probe sensitivity

B. Kulke; R. Frye; F. Penko Particle Accelerator Conference, 1989. Accelerator Science and Technology., Proceedings of the 1989 IEEE, 1989

Four Hall probes from two different manufacturers were exposed to increasing amounts of radiation at the Advanced Test Accelerator and were compared periodically to a nuclear magnetic resonance (NMR) gaussmeter at magnetic field values of 2 to 8 kG. The radiation was primarily bremsstrahlung from a 45-MeV electron beam. The probes were mounted near a beam dump, along with LiF ...


More eLearning Resources

IEEE-USA E-Books

  • Mobility

    This chapter contains sections titled: Introduction Conductivity Mobility Hall Effect and Mobility Magnetoresistance Mobility Time-of-Flight Drift Mobility MOSFET Mobility Contactless Mobility Strengths and Weaknesses Appendix 8.1 Semiconductor Bulk Mobilities Appendix 8.2 Semiconductor Surface Mobilities Appendix 8.3 Effect of Channel Frequency Response Appendix 8.4 Effect of Interface Trapped Charge References Problems Review Questions

  • Spin Hall Effect

    This chapter contains sections titled: Introduction Phenomenology Phenomenological equations Physical consequences of spin-charge coupling Swapping of spin currents: additional terms in Eq. (4) What is it good for, practically? Conclusions

  • Hall Effect and Magnetoresistive Sensors

    This chapter contains sections titled: Simple Hall Voltage Equation Hall Effect Conductivity Tensor Finite-Element Computation of Hall Fields Toothed Wheel Hall Sensors for Position Magnetoresistance Magnetoresistive Heads for Hard-Disk Drives Problems References

  • Graphene and Atom???Thick 2D Materials: Device Application Prospects

    This chapter considers new opportunities and accompanying challenges, examining various aspects of potential device applications of graphene and atom???thick 2D materials, including optoelectronic devices, new type of transistors, and possible CMOS integration. Direct growth is the key technology to make all these applications realistic, so the chapter addresses the prospects of wafer???scale graphene and 2D materials growth. Newly emergent 2D materials including graphene and transition metal dichalcogenides (TMDCs) began as playgrounds for observing exotic physics, such as unconventional quantum Hall effect and quantum transport phenomena. Just as the fundamental understanding and exploration of conventional two???dimensional electron gas (2DEG) in an earlier era became the cornerstone of modern IT industry, these atom???thick 2D materials may lead to an industrial revolution in the post???Si era. The chapter discusses Cu???graphene hybrid interconnects and graphene???inserted source???drain contacts that may help with the critical challenges in further scaling of Si technology.

  • Appendix B: Physical Phenomena

    This appendix contains sections titled: Drift Velocity and Mobility Diffusion Thermionic Emission Image-Force Lowering Recombination and Generation Impact Ionization and Avalanche Space-Charge Effect and Space-Charge-Limited Current Tunneling Ohmic Contact Hall Effect Heterojunction, Quantum Well, Superlattice, and Quantum Dot

  • Carrier and Doping Density

    This chapter contains sections titled: Introduction Capacitance-Voltage (C-V) Current-Voltage (I-V) Measurement Errors and Precautions Hall Effect Optical Techniques Secondary Ion Mass Spectrometry (SIMS) Rutherford Backscattering (RBS) Lateral Profiling Strengths and Weaknesses Appendix 2.1 Parallel or Series Connection? Appendix 2.2 Circuit Conversion References Problems Review Questions

  • Other Magnetic Sensors

    Besides the Hall effect and magnetoresistive sensors, many other types of magnetic sensors are commonly used. This chapter examines these major remaining types of magnetic sensors. The sensors covered in the chapter are: speed sensors based on Faraday's law, inductive recording heads, proximity sensors using impedance, linear variable differential transformers (LVDTs), magnetorestrictive (MR) sensors, fluxgate sensors, Chattock coil field and current sensors, squid magnetometers, magnetoimpedance and miniature sensors, and microelectromechanical systems (MEMS) sensors.

  • Applications and Related Technology

    This chapter contains sections titled: Introduction Capacitor Storage Diagnostic Imaging Frequency Converters and Mixers Fusion Reactors Gyrotron Hall Effect Transducers High-Energy Physics Particle Detector Magnets Infrared Detector Arrays, Uncooled Magnetic Sensors Magnetic Separation Magnetic Source Imaging Magnets for Magnetic Resonance Analysis and Imaging Microwave Ferroelectric Devices Peltier Effect Power Quality SQUIDs Superconducting Cavity Resonators Superconducting Cyclotrons and Compact Synchrotron Light Sources Superconducting Fault Current Limiters Superconducting Filters and Passive Components Superconducting Levitation Superconducting Magnets for Fusion Reactors Superconducting Magnets for Particle Accelerators and Storage Rings Superconducting Transformers Temperature Sensors Thermoelectric Conversion

  • Hall Effect and Magnetoresistive Sensors

    Usually magnetic sensors output a signal voltage along with little or no current. The magnetic fields sensed may vary over an extremely broad range. Magnetic sensors using the Hall effect are very common, small, and inexpensive. This chapter examines the behavior, accuracy, and construction of typical Hall sensors. Along with the Hall effect, it describes a related parameter called magnetoresistance. The chapter discusses Hall voltage equation, Hall effect conductivity tensor, finite-element computation of Hall fields, position sensors, mangnetoresistive heads, and giant magnetoresistance (GMR) sensors.

  • Appendix D: Hall Effect and Magnetoresistance for Small Magnetic Fields

    Semiconductor devices are ubiquitous in today's world and found increasingly in cars, kitchens, and electronic door looks, attesting to their presence in our daily lives. This comprehensive book brings you the fundamentals of semiconductor device theory from basic quantum physics to computer aided design. Advanced Theory of Semiconductor Devices will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology. This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.



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