Hall effect

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The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. (Wikipedia.org)






Conferences related to Hall effect

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2020 IEEE International Conference on Plasma Science (ICOPS)

IEEE International Conference on Plasma Science (ICOPS) is an annual conference coordinated by the Plasma Science and Application Committee (PSAC) of the IEEE Nuclear & Plasma Sciences Society.


2020 IEEE International Magnetic Conference (INTERMAG)

INTERMAG is the premier conference on all aspects of applied magnetism and provides a range of oral and poster presentations, invited talks and symposia, a tutorial session, and exhibits reviewing the latest developments in magnetism.


2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

1. Power Electronic Devices (Si and Wide band-gap) and Applications, 2. Power electronic packaging and integration, 3. Modeling, Simulation and EMI, 4. Lighting Technologies and Applications, 5. Wireless Power Transfer, 6. Uncontrolled Rectifiers and AC/DC Converters, 7. AC/AC Converters, 8. DC/AC Inverters, 9. DC/DC Converters, 10. Multilevel Power Converters, 11. Electric Machines, Actuators and Sensors, 12. Motor Control and Drives, 13. Sensorless and Sensor-Reduction Control, 14. Renewable Energy and Distributed Generation Systems, 15. Smart/Micro Grid, 16. DC Distribution 17. Power Quality (or Power Electronics for Utility Interface), 18. Energy Storage and Management Systems, 19. Power Electronics for Transportation Electrification, 20. Reliability, diagnosis, prognosis and protection, 21. High Voltage DC Transmission, 22. Other Selected Topics in Power Electronics

  • 2015 IEEE 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

    Power electronics, renewable energy, electric vehicle, smart grid

  • 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA)

    The seventh International Power Electronics Conference, IPEC-Hiroshima 2014 -ECCE Asia-, will be held from May 18 to May 21, 2014 in Hiroshima, Japan. The conference venue will be the International Conference Center Hiroshima, which is located in Hiroshima Peace Memorial Park. Power electronics has been providing numerous new technologies in the fields of electric energy conversion and motor drive systems for more than 40 years. In recent years, global energy and environmental issues are becoming more serious and power electronics is expected to play a key role in solving such problems. The IPEC-Hiroshima 2014 -ECCE Asia- will provide a unique opportunity for researchers, engineers, and academics from all over the world to present and exchange the latest information on power electronics, motor drives, and related subjects.

  • 2011 IEEE 8th International Conference on Power Electronics & ECCE Asia (ICPE 2011- ECCE Asia)

    01. Power Semiconductor Devices and Packaging 02. Modeling, Simulation, EMI and Reliability 03. Electric Machines, Actuators and Sensors 04. Motor Control and Drives 05. Sensorless Control 06. Renewable Green Energy (Wind, Solar, Tidal Power Generation) 07. Micro Grid and Distributed Generation 08. Electric Propulsion System (EV, Train, Electric Ship) 09. Electric and Hybrid Vehicles 10. Power Supplies and EV Chargers 11. Power Electronics and Drives for Home Appliance 12. Power Elect

  • 2007 7th International Conference on Power Electronics (ICPE)

    - Power Semiconductor Devices - DC-DC Converters - Inverters and Inverter Control Techniques - Motor Drives - Rectifiers and AC-AC Converters - Renewable Energy - Power Quality and Utility Applications - Automotive Applications and Traction Drives - Energy Storage - Control Techniques Applied to Power Electronics - Modeling, Analysis, and Simulation - Consumer Applications - Other Power Applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


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Periodicals related to Hall effect

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computational Biology and Bioinformatics, IEEE/ACM Transactions on

Specific topics of interest include, but are not limited to, sequence analysis, comparison and alignment methods; motif, gene and signal recognition; molecular evolution; phylogenetics and phylogenomics; determination or prediction of the structure of RNA and Protein in two and three dimensions; DNA twisting and folding; gene expression and gene regulatory networks; deduction of metabolic pathways; micro-array design and analysis; proteomics; ...


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Xplore Articles related to Hall effect

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Hall-effect devices: A survey

1959 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1959

If a magnetic field is applied perpendicular to a current flow in any conductor the moving charges (which constitute the current) are releflected sidewise and build up a potential difference between the two sides of the conductor. The creation of this transverse electric field (perpendicular both to the magnetic field and to the original current flow) is called the Hall ...


A DC current transformer for large bandwidth and high common-mode rejection

IEEE Transactions on Industrial Electronics, 1999

A review of known magnetic-coupled current-sensing techniques is presented, Subsequently, a novel technique is introduced, based on a configuration discussed in a previous paper. The previous technique made use of a galvanomagnetic device (Hall effect sensor) to sense the magnetization of a current transformer core, so that the sum of the Hall voltage and the voltage across the secondary shunt ...


The Hall Effect Circulator-a Passive Transmission Device

Proceedings of the IRE, 1959

Three-port nonreciprocal Hall effect devices have been made which circulate dc and ac signals either in a clockwise or counterclockwise sense. Forward losses of 17 db and reverse losses of 61 db have been obtained, giving a transmission ratio of 44 db. With the aid of simple six-resistor networks (or even simpler three-resistor networks) the nine short circuit admittance parameters ...


Erratum

IEEE Transactions on Plasma Science, 1987

None


Characterization of three commercially available Hall effect sensors for low temperatures and magnetic fields to 23 T

IEEE Transactions on Magnetics, 1976

Low temperature measurements were made on commercially supplied InAs, InSb, and GaAs Hall probes in magnetic fields as high as 23 T. For fields above ∼6 T, the quantum oscillations observed for the GaAs probes were comparable in magnitude to those exhibited by the other two types, i.e.,\lsim2%. At lower fields, the sensitivities of both the GaAs and InSb sensors ...


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Educational Resources on Hall effect

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IEEE-USA E-Books

  • Hall-effect devices: A survey

    If a magnetic field is applied perpendicular to a current flow in any conductor the moving charges (which constitute the current) are releflected sidewise and build up a potential difference between the two sides of the conductor. The creation of this transverse electric field (perpendicular both to the magnetic field and to the original current flow) is called the Hall effect. This effect has been the mode of operation of many proposed devices. These devices, which will be discussed, have been arbitrarily divided into two groups: Devices which use a constant magnetic field, and devices in which a signal or an oscillator produces the magnetic field. Such a division is not entirely arbitrary, because the first groujrhas inherently a very high limit on the operating frequency; whereas the second group has a considerably lower limit.

  • A DC current transformer for large bandwidth and high common-mode rejection

    A review of known magnetic-coupled current-sensing techniques is presented, Subsequently, a novel technique is introduced, based on a configuration discussed in a previous paper. The previous technique made use of a galvanomagnetic device (Hall effect sensor) to sense the magnetization of a current transformer core, so that the sum of the Hall voltage and the voltage across the secondary shunt resistor would yield a faithful copy of the input current. The technique described in this paper makes use of the same principle to obtain a high bandwidth (from DC to 1 MHz) and very high common-mode rejection current transformer, without the need for a Hall effect probe. This is achieved by subtracting the high-frequency components, detected across the secondary shunt resistor, from the voltage across a primary shunt resistor connected in series with the primary of the current transformer. The resulting signal is an accurate image of the transformer magnetizing current, which is then transferred to the secondary side by means of a low-bandwidth isolation amplifier. The high-frequency components are subsequently added, to the amplified and filtered low-frequency components, by means of a third transformer winding, the number of turns of which is chosen to be equal to the gain of the low-frequency amplifier.

  • The Hall Effect Circulator-a Passive Transmission Device

    Three-port nonreciprocal Hall effect devices have been made which circulate dc and ac signals either in a clockwise or counterclockwise sense. Forward losses of 17 db and reverse losses of 61 db have been obtained, giving a transmission ratio of 44 db. With the aid of simple six-resistor networks (or even simpler three-resistor networks) the nine short circuit admittance parameters of the circulator can be adjusted in a calculable manner. These networks permit asymmetrical circulators to appear symmetrical, to operate over a wide range of impedance levels, to operate with any value of magnetic field, and to introduce no loss-or even gain-if negative resistances are used. An analysis of the circulator, with and without the parallel networks, is included. It is shown that the minimum possible forward loss for a Hall effect circulator is 8.4 db.

  • Erratum

    None

  • Characterization of three commercially available Hall effect sensors for low temperatures and magnetic fields to 23 T

    Low temperature measurements were made on commercially supplied InAs, InSb, and GaAs Hall probes in magnetic fields as high as 23 T. For fields above ∼6 T, the quantum oscillations observed for the GaAs probes were comparable in magnitude to those exhibited by the other two types, i.e.,\lsim2%. At lower fields, the sensitivities of both the GaAs and InSb sensors were different from their respective high field values; this behavior was absent in the case of the InAs probes. All three types of probes shared the advantage of reasonably good reproducibility with respect to thermal cycling and magnetic field cycling.

  • A chopper stabilized biasing circuit suitable for cascaded wheatstone-bridge-like sensors

    Many sensitive devices are based on Wheatstone bridge structures or can be modeled as Wheatstone bridges like Hall effect magnetic sensors. These sensors require a biasing circuit, and many solutions were proposed. However, up to now, none of them gives the opportunity to cascade several sensors, while such a cascade can help in improving the signal-to-noise-ratio (SNR) or in removing some parasitic effects through the direct summing/subtraction of sensing/parasitic effects. The circuit this paper presents is based on an operational transconductance amplifier with n output stages, and allows to cascade n Wheatstone-bridge-like sensors. It is shown that the maximal number of bridges which can be efficiently cascaded is limited by the output resistance of the output stages. Nevertheless, this number remains sufficient in practical cases, easily up to n=10. To remove the 1/f noise coming from the output stages, a chopper stabilization is used. We also establish formulas which allow quick hand calculation of the main parameters of the circuit. A prototype where 10 Hall effect sensors are cascaded is presented as well as experimental results.

  • Magnetic Flux Pattern Instrumentation Using Hall Probes

    None

  • Hall playback measurements of a tape remanence profile and related stress effects

    The high resolution and dc response of a Hall effect playback head allows one to measure details of the individual bits of a recorded signal as a tape is moved very slowly past the head. Using this method, the demagnetization, as a function of recorded wavelength, that is produced by rubbing tapes a different number of times is compared with the loss in signal due to repeated playback, and with earlier rubbing measurements on a dc magnetized tape which were made with a large Hall probe and a vibrating sample magnetometer.

  • Horizontal Hall effect sensor with high maximum absolute sensitivity

    The sensitivity of conventional Hall effect sensors is strongly limited by the well-known short-circuit effects. Many researches were devoted to reduce offset and noise, but few works were carried out to improve the sensitivity. Here, a new shape of integrated horizontal Hall effect device is presented. This particular shape has been developed in order to minimize the short- circuit effects in the sensor, allowing to reduce its length to width ratio and consequently to reduce its average resistance. Thus, the biasing current of this sensor can be significantly increased in order to obtain a higher absolute sensitivity than for conventional devices. Such a Hall effect device needs a specific biasing circuit which is also presented, first in a simple version and second in an improved one. A resolution of 32 /spl mu/T has been reached on a bandwidth of 5 Hz to 1 kHz with a 39/spl times/9.2 /spl mu/m/sup 2/ sensor biased with a current of 2.07 mA, the corresponding absolute sensitivity being 195 mV/T. The maximal absolute sensitivity of a so shaped device can be increased as much as needed by increasing its width-to-length ratio, without loss on the current related sensitivity.

  • Hall-effect devices

    The Hall effect and magnetoresistance in solids is discussed in terms of the Lorentz force on current carriers. The advances in thin-film high-mobility semiconductors are related to the increased utilization and developments of Hall-effect devices. The design of such devices depends, in most cases, on the associated magnetic structures. Several examples of applications of Hall- effect and magnetoresistive devices to measurements, communications, and controls are presented. Limitations in performance due to magnetic structures, current noise, and various other galvanomagnetic and thermomagnetic effects are discussed to indicate the range of capabilities of the devices.



Standards related to Hall effect

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IEEE Standard for Safety Levels With Respect to Human Exposure to Electromagnetic Fields, 0-3 kHz

Develop safety levels for human exposure to electromagnetic fields from 0 to 3kHz. This standard will be based on the results of an evaluation of the relevant scientific literature and proven effects which are well established and for which thresholds of reaction are understood. Field limits will be derived from threshold current densities or internal electric fields.



Jobs related to Hall effect

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