Hall effect

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The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and a magnetic field perpendicular to the current. (Wikipedia.org)






Conferences related to Hall effect

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2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)

1. Power Electronic Devices (Si and Wide band-gap) and Applications, 2. Power electronic packaging and integration, 3. Modeling, Simulation and EMI, 4. Lighting Technologies and Applications, 5. Wireless Power Transfer, 6. Uncontrolled Rectifiers and AC/DC Converters, 7. AC/AC Converters, 8. DC/AC Inverters, 9. DC/DC Converters, 10. Multilevel Power Converters, 11. Electric Machines, Actuators and Sensors, 12. Motor Control and Drives, 13. Sensorless and Sensor-Reduction Control, 14. Renewable Energy and Distributed Generation Systems, 15. Smart/Micro Grid, 16. DC Distribution 17. Power Quality (or Power Electronics for Utility Interface), 18. Energy Storage and Management Systems, 19. Power Electronics for Transportation Electrification, 20. Reliability, diagnosis, prognosis and protection, 21. High Voltage DC Transmission, 22. Other Selected Topics in Power Electronics

  • 2015 IEEE 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia)

    Power electronics, renewable energy, electric vehicle, smart grid

  • 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA)

    The seventh International Power Electronics Conference, IPEC-Hiroshima 2014 -ECCE Asia-, will be held from May 18 to May 21, 2014 in Hiroshima, Japan. The conference venue will be the International Conference Center Hiroshima, which is located in Hiroshima Peace Memorial Park. Power electronics has been providing numerous new technologies in the fields of electric energy conversion and motor drive systems for more than 40 years. In recent years, global energy and environmental issues are becoming more serious and power electronics is expected to play a key role in solving such problems. The IPEC-Hiroshima 2014 -ECCE Asia- will provide a unique opportunity for researchers, engineers, and academics from all over the world to present and exchange the latest information on power electronics, motor drives, and related subjects.

  • 2011 IEEE 8th International Conference on Power Electronics & ECCE Asia (ICPE 2011- ECCE Asia)

    01. Power Semiconductor Devices and Packaging 02. Modeling, Simulation, EMI and Reliability 03. Electric Machines, Actuators and Sensors 04. Motor Control and Drives 05. Sensorless Control 06. Renewable Green Energy (Wind, Solar, Tidal Power Generation) 07. Micro Grid and Distributed Generation 08. Electric Propulsion System (EV, Train, Electric Ship) 09. Electric and Hybrid Vehicles 10. Power Supplies and EV Chargers 11. Power Electronics and Drives for Home Appliance 12. Power Elect

  • 2007 7th International Conference on Power Electronics (ICPE)

    - Power Semiconductor Devices - DC-DC Converters - Inverters and Inverter Control Techniques - Motor Drives - Rectifiers and AC-AC Converters - Renewable Energy - Power Quality and Utility Applications - Automotive Applications and Traction Drives - Energy Storage - Control Techniques Applied to Power Electronics - Modeling, Analysis, and Simulation - Consumer Applications - Other Power Applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe)

Energy conversion and conditioning technologies, power electronics, adjustable speed drives and their applications, power electronics for smarter grid, energy efficiency,technologies for sustainable energy systems, converters and power supplies


2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

Nanotechnology

  • 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO)

    IEEE Nano is one of the largest nanotechnology conferences in the world, directly sponsored by the IEEE Nanotechnology Council. IEEE NANO 2017 will provide an international forum for inspiration, interactions and exchange of ideas in a wide variety of branches of nanotechnology and nanoscience, through feature tutorials, workshops, and track sessions; plenary and invited talks from the world most renowned scientists and engineers; exhibition of software, hardware, equipment, materials, services and literature. It is a must for students, educators, researchers, scientists and engineers engaged in a wide range of nanotechnology fields and related applications, including electronic materials, photonics, biotechnology, medicine, alternative energy, environment and electronic devices.

  • 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)

    IEEE-NANO is the flagship IEEE Nanotechnology conference. The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope is to bring together researchers, industry workers, entrepreneurs and funding agency leaders, in the general area of nanotechnology. IEEE NANO 2015 will provide a forum for the exchange of ideas, interaction, networking and collaboration for research and development in nanotechnology with special attention to the latest advances in nanotechnology

  • 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO)

    NANO is the flagship IEEE conference in Nanotechnology, which makes it a must for students, educators, researchers, scientists and engineers alike, working at the interface of nanotechnology and the many fields of electronic materials, photonics, bio-and medical devices, alternative energy, environmental protection, and multiple areas of current and future electrical and electronic applications. In each of these areas, NANO is the conference where practitioners will see nanotechnologies at work in both their own and related fields, from basic research and theory to industrial applications.

  • 2013 IEEE 13th International Conference on Nanotechnology (IEEE-NANO)

    Nanoelectronics, nanomanufacturing, nanomaterials, nanodevice, nanofibration, nanofluidics, nano-bio-medicine, NEMS applications, nanocircuits, nanorobotics, nanomanipulation, nanosensors and actuators, nanophotonics, nanomagnetics, micro-to-nano-scale bridging

  • 2012 IEEE 12th International Conference on Nanotechnology (IEEE-NANO)

    The conference scope covers a wide range in nanoscience and technology. In particular, it covers nanofabrication, nanomanufacturing, nanomaerials, nanobiomedicine, nanoenergy, nanoplasmonics, nanoelectronics, nanosensors and nanoactuators, characterisation and modelling of nano structures and devices. Research in both experiments and simulation is reported. Industry is encouraged to present its research projects.

  • 2011 10th Conference on Nanotechnology (IEEE-NANO)

    1. Nanomaterials and Nanostructures 2. Nanoelectronics and Nanodevices 3. Nanophotonics 4. Nano biotechnology and Nanomedicine 5. Nanorobotics and NEMS

  • 2011 IEEE 11th International Conference on Nanotechnology (IEEE-NANO)

    All areas of nanotechnology within the areas of IEEE interest, as covered by the member societies of the Nanotechnology Council.

  • 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO)

    - More Moore, More than Moore and Beyond-CMOS - Nano-optics, Nano-Photonics, Plasmonics, Nano-optoelectronics - Nanofabrication, Nanolithography, Nano Manipulation, Nanotools - Nanomaterials and Nanostructures - Nanocarbon, Nanodiamond, Graphene and CNT Based Technologies - Nano-sensors and Nano Membranes - Modeling and Simulation - System Integration (Nano/Micro/Macro), NEMS, and Actuators - Molecular Electronics, Inorganic Nanowires, Nanocrystals, Quantum Dots

  • 2009 9th IEEE Conference on Nanotechnology (IEEE-NANO)

    THE CONFERENCE FOCUSES ON THE APPLICATION OF NANOSCIENCE AND NANOTECHNOLOGY. SPECIFICALLY, BOTH ENGINEERING ISSUE RELATED TO NANOFABBRICATION , NANOELECTRONICS, SENSOR SYSTEMS WILL BE COVERED IN ADDITION FOUNDAMENTAL ISSUES SUCH AS MODELLING, SYNTHESIS, CARACTARIZATION ETC.

  • 2008 8th IEEE Conference on Nanotechnology (IEEE-NANO)

    This conference is the sequel to meetings held in Maui (2001), Washington (2002), San Francisco (2003), Munich (2004), Nagoya (2005), Cinncinati (2006), and Hong Kong (2007). The conference focus will be on engineering and business issues related to nanoelectronics, circuits, architectures, sensor systems, integration, reliability and manufacturing in addition to fundamental issues such as modeling, growth/synthesis, and characterization. The conference will feature plenary, invited, and contributed papers

  • 2007 7th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2006 6th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2005 5th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2004 4th IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2003 3rd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2002 2nd IEEE Conference on Nanotechnology (IEEE-NANO)

  • 2001 1st IEEE Conference on Nanotechnology (IEEE-NANO)


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Periodicals related to Hall effect

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Computational Biology and Bioinformatics, IEEE/ACM Transactions on

Specific topics of interest include, but are not limited to, sequence analysis, comparison and alignment methods; motif, gene and signal recognition; molecular evolution; phylogenetics and phylogenomics; determination or prediction of the structure of RNA and Protein in two and three dimensions; DNA twisting and folding; gene expression and gene regulatory networks; deduction of metabolic pathways; micro-array design and analysis; proteomics; ...


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


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Xplore Articles related to Hall effect

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Hall-effect devices: A survey

[{u'author_order': 1, u'affiliation': u'Bell Labs., Murray Hill, NJ, USA', u'full_name': u'W.J. Grubbs'}] 1959 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1959

If a magnetic field is applied perpendicular to a current flow in any conductor the moving charges (which constitute the current) are releflected sidewise and build up a potential difference between the two sides of the conductor. The creation of this transverse electric field (perpendicular both to the magnetic field and to the original current flow) is called the Hall ...


A DC current transformer for large bandwidth and high common-mode rejection

[{u'author_order': 1, u'affiliation': u'Power & Energy Conversion Syst. Div., Eur. Space Res. & Technol. Centre, Noordwijk, Netherlands', u'full_name': u'L. Ghislanzoni'}, {u'author_order': 2, u'full_name': u'J.A. Carrasco'}] IEEE Transactions on Industrial Electronics, 1999

A review of known magnetic-coupled current-sensing techniques is presented, Subsequently, a novel technique is introduced, based on a configuration discussed in a previous paper. The previous technique made use of a galvanomagnetic device (Hall effect sensor) to sense the magnetization of a current transformer core, so that the sum of the Hall voltage and the voltage across the secondary shunt ...


The Hall Effect Circulator-a Passive Transmission Device

[{u'author_order': 1, u'affiliation': u'Bell Telephone Laboratories, Inc., Murray Hill, N.J.', u'full_name': u'W. J. Grubbs'}] Proceedings of the IRE, 1959

Three-port nonreciprocal Hall effect devices have been made which circulate dc and ac signals either in a clockwise or counterclockwise sense. Forward losses of 17 db and reverse losses of 61 db have been obtained, giving a transmission ratio of 44 db. With the aid of simple six-resistor networks (or even simpler three-resistor networks) the nine short circuit admittance parameters ...


Erratum

[{u'author_order': 1, u'full_name': u'Anthony L. Peratt'}] IEEE Transactions on Plasma Science, 1987

None


Characterization of three commercially available Hall effect sensors for low temperatures and magnetic fields to 23 T

[{u'author_order': 1, u'affiliation': u'Tufts University, Medford, Massachusetts', u'full_name': u'H. Sample'}, {u'author_order': 2, u'full_name': u'L. Rubin'}] IEEE Transactions on Magnetics, 1976

Low temperature measurements were made on commercially supplied InAs, InSb, and GaAs Hall probes in magnetic fields as high as 23 T. For fields above ∼6 T, the quantum oscillations observed for the GaAs probes were comparable in magnitude to those exhibited by the other two types, i.e.,\lsim2%. At lower fields, the sensitivities of both the GaAs and InSb sensors ...


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Educational Resources on Hall effect

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eLearning

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IEEE-USA E-Books

  • Hall Effect and Magnetoresistive Sensors

    Usually magnetic sensors output a signal voltage along with little or no current. The magnetic fields sensed may vary over an extremely broad range. Magnetic sensors using the Hall effect are very common, small, and inexpensive. This chapter examines the behavior, accuracy, and construction of typical Hall sensors. Along with the Hall effect, it describes a related parameter called magnetoresistance. The chapter discusses Hall voltage equation, Hall effect conductivity tensor, finite-element computation of Hall fields, position sensors, mangnetoresistive heads, and giant magnetoresistance (GMR) sensors.



Standards related to Hall effect

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IEEE Standard for Safety Levels With Respect to Human Exposure to Electromagnetic Fields, 0-3 kHz

Develop safety levels for human exposure to electromagnetic fields from 0 to 3kHz. This standard will be based on the results of an evaluation of the relevant scientific literature and proven effects which are well established and for which thresholds of reaction are understood. Field limits will be derived from threshold current densities or internal electric fields.



Jobs related to Hall effect

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