Gallium

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Gallium is a chemical element that has the symbol Ga and atomic number 31. (Wikipedia.org)






Conferences related to Gallium

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2015 IEEE Energy Conversion Congress and Exposition

The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.


2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2014 IEEE Photonics Society Summer Topical Meeting Series

The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.


2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Electron Devices and Solid-State Circuits

  • 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Photonics; Nanoelectronic, RF & Microwave Devices and Circuits, Device and Circuit Reliability, Power Electronics, Communication Circuits, Sensor and MEMS, Digital and Memory Circuits, Organic Devices, Novel Analog Circuits, Bioelectronics,Data Processing Circuits.

  • 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    EDSSC 2011 is the 7th in a series of very successful conferences initiated by IEEE ED/SSC Hong Kong joint Chapter.EDSSC 2011 is a two-day program comprising broad areas in electron devices and solid-state circuits. Over two days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on the emerging challenges and opportunities.

  • 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Nanoelectronics, Memory Device and Technology, Thin Gate Dielectrics, Photonic Devices, RF & Microwave Devices, Power Devices, Sensors, imagers and MEMS, Analog Circuits, Biomedical Circuits Data Conversion Circuits Digital and Memory Circuits, Power Management Circuits, RF & Microwave Circuits, and Wireless and Wireline Communication Circuits

  • 2009 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    The EDSSC 2009 will cover all aspects of devices and circuits, including memory devices, thin gate dielectrics, photonic devices, power devices, RF devices, analog circuits, digital circuits, and RF and microwave circuits

  • 2008 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    EDSSC 08 is a three-day program comprising broad areas in electron devices and solid-state circuits.

  • 2007 IEEE Conference on Electron Devices and Solid- State Circuits (EDSSC)

    Nanoelectronics ,Memory Device and Technology,Thin Gate Dielectrics ,Photonic Devices ,RF & Microwave Devices, Power Devices ,Sensors and MEMS ,Low-Power Circuits ,GHz Digital Circuits ,Analog Circuits ,Photonic Integrated Circuits RF & Microwave Circuits, Power Circuits ,IC Manufacturing and Packaging


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Periodicals related to Gallium

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Gallium

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InGaAsN/GaAs lasers fabricated with pulsed anodic oxides

Chongyang Liu; Wah, R.T.J.; Shu Yuan; Wang, S.Z.; Yoon, S.F. Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on, 2003

InGaAsN/GaAs wafers were grown by molecular beam epitaxy. Rapid thermal annealing of the wafers and photoluminescence measurements were performed. Ridge waveguide lasers with pulsed anodic oxides as the current-blocking layer were fabricated and characterized.


GaN Nanowires for Optoelectronic Devices

Bertness, K.A. Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE, 2007

Single-crystal GaN nanowires have a number of unique properties that make them attractive for future optoelectronic device manufacturing. The nanowires have been shown to have low defect density, high optical output and controllable n-type conductivity. This talk will focus on nanowires that are grown by molecular beam epitaxy (MBE) without a catalyst, resulting in high crystalline purity, very low strain ...


Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence

Wang, Chih Hsin; Neugroschel, Arnost Electron Devices, IEEE Transactions on, 1991

A novel nondestructive and contactless experimental method for measurement of the minority-carrier lifetime τ and surface recombination velocity S is presented. The method is based on the analysis of the photoluminescence (PL) time decay after laser excitation. The PL decay is analyzed in the frequency domain, which allows accurate extraction of both τ and S independently from the same measurement. ...


Capillary tunneling characteristics of aromatic halides on gallium electrodes

Xun Li; Xiaolin Fan; Xiangfen Liu; Min Zhu; Hai Jin Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on, 2008

The tunneling characteristics based on the capillary tunnel junctions of aromatic halides such as C6H4C12, C12H8C12, C6H4Br2, C12H8Br2, C6H4I2, C12H8I2 sandwiched between gallium electrodes were described. The current-voltage (I-V) characteristics of the tunnel junctions fabricated by this method show fine rectifying behavior. We compare the conductance of different terminal atom-gallium combinations and find that the conductance is larger when the ...


Comments on "An analytical two-dimensional perturbation method to model submicron GaAs MESFET's" [with reply]

Kukreja, N.; Gupta, R.S. Microwave Theory and Techniques, IEEE Transactions on, 1993

The commenter report that they have found serious discrepancies in the above- titled paper by E. Donker and F. C. Jain (ibid., vol.37, no.9, p.1484-7, Sept. 1989). Particularly in the potential expression and the equation governing the current-voltage characteristics of GaAs MESFET. Moreover, they found that the model is valid until the linear regime and not in the saturation regime. ...


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Educational Resources on Gallium

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InGaAsN/GaAs lasers fabricated with pulsed anodic oxides

Chongyang Liu; Wah, R.T.J.; Shu Yuan; Wang, S.Z.; Yoon, S.F. Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on, 2003

InGaAsN/GaAs wafers were grown by molecular beam epitaxy. Rapid thermal annealing of the wafers and photoluminescence measurements were performed. Ridge waveguide lasers with pulsed anodic oxides as the current-blocking layer were fabricated and characterized.


GaN Nanowires for Optoelectronic Devices

Bertness, K.A. Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE, 2007

Single-crystal GaN nanowires have a number of unique properties that make them attractive for future optoelectronic device manufacturing. The nanowires have been shown to have low defect density, high optical output and controllable n-type conductivity. This talk will focus on nanowires that are grown by molecular beam epitaxy (MBE) without a catalyst, resulting in high crystalline purity, very low strain ...


Minority-carrier lifetime and surface recombination velocity measurement by frequency-domain photoluminescence

Wang, Chih Hsin; Neugroschel, Arnost Electron Devices, IEEE Transactions on, 1991

A novel nondestructive and contactless experimental method for measurement of the minority-carrier lifetime τ and surface recombination velocity S is presented. The method is based on the analysis of the photoluminescence (PL) time decay after laser excitation. The PL decay is analyzed in the frequency domain, which allows accurate extraction of both τ and S independently from the same measurement. ...


Capillary tunneling characteristics of aromatic halides on gallium electrodes

Xun Li; Xiaolin Fan; Xiangfen Liu; Min Zhu; Hai Jin Nano/Micro Engineered and Molecular Systems, 2008. NEMS 2008. 3rd IEEE International Conference on, 2008

The tunneling characteristics based on the capillary tunnel junctions of aromatic halides such as C6H4C12, C12H8C12, C6H4Br2, C12H8Br2, C6H4I2, C12H8I2 sandwiched between gallium electrodes were described. The current-voltage (I-V) characteristics of the tunnel junctions fabricated by this method show fine rectifying behavior. We compare the conductance of different terminal atom-gallium combinations and find that the conductance is larger when the ...


Comments on "An analytical two-dimensional perturbation method to model submicron GaAs MESFET's" [with reply]

Kukreja, N.; Gupta, R.S. Microwave Theory and Techniques, IEEE Transactions on, 1993

The commenter report that they have found serious discrepancies in the above- titled paper by E. Donker and F. C. Jain (ibid., vol.37, no.9, p.1484-7, Sept. 1989). Particularly in the potential expression and the equation governing the current-voltage characteristics of GaAs MESFET. Moreover, they found that the model is valid until the linear regime and not in the saturation regime. ...


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