Gallium

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Gallium is a chemical element that has the symbol Ga and atomic number 31. (Wikipedia.org)






Conferences related to Gallium

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2015 IEEE Energy Conversion Congress and Exposition

The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.


2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2014 IEEE Photonics Society Summer Topical Meeting Series

The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.


2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Electron Devices and Solid-State Circuits

  • 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Photonics; Nanoelectronic, RF & Microwave Devices and Circuits, Device and Circuit Reliability, Power Electronics, Communication Circuits, Sensor and MEMS, Digital and Memory Circuits, Organic Devices, Novel Analog Circuits, Bioelectronics,Data Processing Circuits.

  • 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    EDSSC 2011 is the 7th in a series of very successful conferences initiated by IEEE ED/SSC Hong Kong joint Chapter.EDSSC 2011 is a two-day program comprising broad areas in electron devices and solid-state circuits. Over two days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on the emerging challenges and opportunities.

  • 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Nanoelectronics, Memory Device and Technology, Thin Gate Dielectrics, Photonic Devices, RF & Microwave Devices, Power Devices, Sensors, imagers and MEMS, Analog Circuits, Biomedical Circuits Data Conversion Circuits Digital and Memory Circuits, Power Management Circuits, RF & Microwave Circuits, and Wireless and Wireline Communication Circuits

  • 2009 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    The EDSSC 2009 will cover all aspects of devices and circuits, including memory devices, thin gate dielectrics, photonic devices, power devices, RF devices, analog circuits, digital circuits, and RF and microwave circuits

  • 2008 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    EDSSC 08 is a three-day program comprising broad areas in electron devices and solid-state circuits.

  • 2007 IEEE Conference on Electron Devices and Solid- State Circuits (EDSSC)

    Nanoelectronics ,Memory Device and Technology,Thin Gate Dielectrics ,Photonic Devices ,RF & Microwave Devices, Power Devices ,Sensors and MEMS ,Low-Power Circuits ,GHz Digital Circuits ,Analog Circuits ,Photonic Integrated Circuits RF & Microwave Circuits, Power Circuits ,IC Manufacturing and Packaging


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Periodicals related to Gallium

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Gallium

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High-linearity two-watt power amplifier for multiband wireless applications

Faiz, M.M.; Earles, S.K.; Bin Hou; Shuyun Zhang Southeastcon, 2012 Proceedings of IEEE, 2012

Amplifiers in the final stages of wireless transmitters boost the power level of the up-converted signals, but the ultimate power level is not same for all transmitters. One specific amplifier can be used as a driver in a cellular base station or as last stage in applications like a pico-cell. However, the amplifier has to meet the stringent linearity requirement ...


Towards a large-signal noise model for GaN HEMT devices

Rudolph, M.; Doerner, R. Microwave Conference (EuMC), 2013 European, 2013

This paper proposes a bias-dependent description of the HEMT noise sources that is optimized with respect to implementation in large-signal compact models. The noise is described as a function of drain current instead of small-signal parameters like the transconductance in order to maintain consistency between the small-signal and large-signal world.


A low phase noise quadrature ring oscillator using 0.5µm GaN-on-Si HEMT

Fan-Hsiu Huang; Guan-Ting Lee; Hsien-Chin Chiu Microwave Conference (EuMC), 2013 European, 2013

A quadrature ring oscillator designed for wireless communications has been and implemented in 0.5 μm GaN-on-Si HEMT technology. Based on the large-signal GaN HEMT and the transmission line models on silicon substrate, the oscillation frequency and output power can be predicted accurately in the simulation. The operating frequency of the two-stage ring oscillator is close to 5.76 GHz. By using ...


Epitaxial lift-off processed GaAs thin-film solar cells integrated with low-cost plastic mini-compound parabolic concentrators

Kyusang Lee; Jaesang Lee; Mazor, B.A.; Forrest, S.R. Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th, 2014

We demonstrate the integration of GaAs thin-film solar cells with low-cost plastic mini-compound parabolic concentrators (CPC) by combing a non- destructive epitaxial lift-off (ND-ELO) technique and a vacuum-assisted thermoforming process. To simplify the thin film III-V active layer transfer and to eliminate the use of adhesives of the epi to the secondary plastic substrate, we employ cold-weld bonding. The integration ...


Low-Noise Amplifier at 2.45 GHz [TC Contests]

Gawande, R.; Bradley, R. Microwave Magazine, IEEE, 2010

An LNA with 15 K noise at 2.45 GHz working at ambient temperature has been developed using the GaAs metamorphic HEMT iT8002D manufactured by GigOptix. Unfortunately, this transistor has been discontinued. We replaced iT8002D by the FHX45X, general purpose GaAs SuperHEMT manufactured by Eudyna in the same circuit. FHX45X has the same gate width of 280 um. The measured S ...


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