Gallium

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Gallium is a chemical element that has the symbol Ga and atomic number 31. (Wikipedia.org)






Conferences related to Gallium

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2015 IEEE Energy Conversion Congress and Exposition

The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.


2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2014 IEEE Photonics Society Summer Topical Meeting Series

The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.


2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Electron Devices and Solid-State Circuits

  • 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Photonics; Nanoelectronic, RF & Microwave Devices and Circuits, Device and Circuit Reliability, Power Electronics, Communication Circuits, Sensor and MEMS, Digital and Memory Circuits, Organic Devices, Novel Analog Circuits, Bioelectronics,Data Processing Circuits.

  • 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    EDSSC 2011 is the 7th in a series of very successful conferences initiated by IEEE ED/SSC Hong Kong joint Chapter.EDSSC 2011 is a two-day program comprising broad areas in electron devices and solid-state circuits. Over two days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on the emerging challenges and opportunities.

  • 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Nanoelectronics, Memory Device and Technology, Thin Gate Dielectrics, Photonic Devices, RF & Microwave Devices, Power Devices, Sensors, imagers and MEMS, Analog Circuits, Biomedical Circuits Data Conversion Circuits Digital and Memory Circuits, Power Management Circuits, RF & Microwave Circuits, and Wireless and Wireline Communication Circuits

  • 2009 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    The EDSSC 2009 will cover all aspects of devices and circuits, including memory devices, thin gate dielectrics, photonic devices, power devices, RF devices, analog circuits, digital circuits, and RF and microwave circuits

  • 2008 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    EDSSC 08 is a three-day program comprising broad areas in electron devices and solid-state circuits.

  • 2007 IEEE Conference on Electron Devices and Solid- State Circuits (EDSSC)

    Nanoelectronics ,Memory Device and Technology,Thin Gate Dielectrics ,Photonic Devices ,RF & Microwave Devices, Power Devices ,Sensors and MEMS ,Low-Power Circuits ,GHz Digital Circuits ,Analog Circuits ,Photonic Integrated Circuits RF & Microwave Circuits, Power Circuits ,IC Manufacturing and Packaging


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Periodicals related to Gallium

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Gallium

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On the completeness of the lattice factorization for linear-phase perfect reconstruction filter banks

Lu Gan; Kai-Kuang Ma; Nguyen, T.Q.; Tran, T.D.; de Queiroz, R.L. Signal Processing Letters, IEEE, 2002

In this letter, we re-examine the completeness of the lattice factorization for M-channel linear-phase perfect reconstruction filter bank (LPPRFB) with filters of the same length L=KM as discussed by Tran et al. (see IEEE Trans. Signal Processing, vol.48, p.133-47, Jan. 2000). We point out that the assertion of completeness is incorrect. Examples are presented to show that the proposed lattice ...


Electron spin splitting in polarization-doped III-nitrides

Litvinov, V.I. Compound Semiconductors, 2003. International Symposium on, 2003

Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures for the first time. Despite wide bandgap, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to be comparable to that in InGaAs/GaAs matrial system due to the strong polarization field at the interface and polarization-induced doping.


Optimization of Image Fusion using Genetic Algorithms and Discrete Wavelet Transform

Lacewell, C.W.; Gebril, M.; Buaba, R.; Homaifar, A. Aerospace and Electronics Conference (NAECON), Proceedings of the IEEE 2010 National, 2010

Image fusion is the process of combining the most relevant information from multiple source images to obtain an accurate fused image. In this paper, we want to fuse visual and thermal satellite images. In order to provide enhanced information, we have investigated techniques of image fusion to obtain the most accurate information. This paper presents a technique which will produce ...


Fabrication and characterization of photonic crystal-based symmetric Mach-Zehnder (PC-SMZ) structures based on GaAs membrane slab waveguides

Sugimoto, Yoshimasa; Tanaka, Y.; Ikeda, Naoki; Nakamura, Hitoshi; Kanamoto, K.; Ohkouchi, Shunsuke; Watanabe, Y.; Inoue, Kuon; Asakawa, Kiyoshi Selected Areas in Communications, IEEE Journal on, 2005

We have experimentally demonstrated two- dimensional (2-D) photonic crystal (PC) waveguides (WGs) such as straight, bent, Y-branch, directional coupler (DC), and quantum dots (QDs)-based nonlinear optical (NLO) WGs using a GaAs air-bridge membrane with triangular-lattice line-defect WGs. These WGs are necessary for a 2-D PC-based symmetric Mach-Zehnder (PC-SMZ) type ultrafast all-optical switch. Experimental results on the clear observation of the ...


Simulations of the terahertz AlGaN/GaN resonant tunneling diode

Hanbing He; Wei Mao; Lin'an Yang Junction Technology (IWJT), 2012 12th International Workshop on, 2012

A simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature is reported, by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an obvious degradation in negative differential resistance(NDR) characteristic of RTD occurs when the defect density is above 106 cm-2. Finally, a RTD oscillator is simulated, which output power ...


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