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Gallium is a chemical element that has the symbol Ga and atomic number 31. (

Conferences related to Gallium

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2015 IEEE Energy Conversion Congress and Exposition

The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.

2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum

2014 IEEE Photonics Society Summer Topical Meeting Series

The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.

2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Electron Devices and Solid-State Circuits

  • 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Photonics; Nanoelectronic, RF & Microwave Devices and Circuits, Device and Circuit Reliability, Power Electronics, Communication Circuits, Sensor and MEMS, Digital and Memory Circuits, Organic Devices, Novel Analog Circuits, Bioelectronics,Data Processing Circuits.

  • 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    EDSSC 2011 is the 7th in a series of very successful conferences initiated by IEEE ED/SSC Hong Kong joint Chapter.EDSSC 2011 is a two-day program comprising broad areas in electron devices and solid-state circuits. Over two days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on the emerging challenges and opportunities.

  • 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Nanoelectronics, Memory Device and Technology, Thin Gate Dielectrics, Photonic Devices, RF & Microwave Devices, Power Devices, Sensors, imagers and MEMS, Analog Circuits, Biomedical Circuits Data Conversion Circuits Digital and Memory Circuits, Power Management Circuits, RF & Microwave Circuits, and Wireless and Wireline Communication Circuits

  • 2009 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    The EDSSC 2009 will cover all aspects of devices and circuits, including memory devices, thin gate dielectrics, photonic devices, power devices, RF devices, analog circuits, digital circuits, and RF and microwave circuits

  • 2008 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    EDSSC 08 is a three-day program comprising broad areas in electron devices and solid-state circuits.

  • 2007 IEEE Conference on Electron Devices and Solid- State Circuits (EDSSC)

    Nanoelectronics ,Memory Device and Technology,Thin Gate Dielectrics ,Photonic Devices ,RF & Microwave Devices, Power Devices ,Sensors and MEMS ,Low-Power Circuits ,GHz Digital Circuits ,Analog Circuits ,Photonic Integrated Circuits RF & Microwave Circuits, Power Circuits ,IC Manufacturing and Packaging

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Periodicals related to Gallium

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.

Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.

Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.

Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

Xplore Articles related to Gallium

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Monolithic cryogenic preamplifiers based on large gate-area GaAs MESFETs

Camin, D.V.; Fedyakin, N.; Pessina, G.; Previtali, E. Nuclear Science, IEEE Transactions on, 1995

Monolithic preamplifiers using large gate-area Gallium-Arsenide Metal- Semiconductor Field-Effect Transistors (GaAs MESFETs) at the input have been designed and fabricated using an ion-implanted GaAs process. Large gate-area is necessary to obtain low series noise. A differential voltage-sensitive preamplifier has at the input two MESFETs with a gate width W=6000 μm, it is fully DC coupled, has a large common-mode rejection ...

A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications

Lee, Jong-Lam; Mun, Jae Kyoung; Kim, Haecheon; Jai-Jin Lee; Park, Hyung-Moo Electron Devices, IEEE Transactions on, 1996

A high-efficient GaAs power metal semiconductor field effect transistor operating at a drain voltage of 2.3 V has been developed for low distortion power applications. The device has been fabricated on an epitaxial layer with a high-low doped structure grown by molecular beam epitaxy. The MESFET with a gate length of 0.8 μm and a total gate width of 21.16 ...

Reconstruction of multivariate signals using q-Gaussian radial basis function Network

Silva, L.E.V.; Duque, J.J.; Tinó s, R.; Murta, L.O. Computing in Cardiology, 2010, 2010

Radial basis function Networks (RBFNs) have been successfully employed in different Machine Learning problems. The use of different radial basis functions in RBFN has been reported in the literature. Here, we discuss the use of the q-Gaussian function as a radial basis function employed in RBFNs. An interesting property of the q-Gaussian function is that it can continuously and smoothly ...

Impact of <formula formulatype="inline"> \hbox {Al}_{2}\hbox {O}_{3} </formula> Passivation Thickness in Highly Scaled GaN HEMTs

Dong Seup Lee; Laboutin, O.; Yu Cao; Johnson, W.; Beam, E.; Ketterson, A.; Schuette, M.; Saunier, P.; Palacios, T. Electron Device Letters, IEEE, 2012

This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 nm. As the Al2O3 passivation thickness increases, the current collapse in 80-μs pulsed-_I_ -_V_ measurements decreases from 30% to 13%, while dc characteristics are almost unchanged with the exception of increasing drain-induced barrier lowering. The ...

A Refractory Self-Aligned Gate Process for Monolithically Combined Microwave and Digital GaAs ICs

Geissberger, A.; Sadler, R.; Griffin, E.; Bahl, I.; Singh, H.; Drinkwine, M. Microwave Symposium Digest, 1987 IEEE MTT-S International, 1987

We present a process for monolithically fabricating microwave and DCFL digital GaAs circuits. The process employs refractory metal SAG FETs with techniques to provide low gate resistance and high output resistance and break-down voltage. Using a 1.0 µm gate length, 1.5 dB noise figure with 10.2 dB associated gain at 10 GHz analog performance and 65 ps typical propagation delay ...

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Educational Resources on Gallium

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RF Power Amplifier Linearization

M&#225; irt&#237; n O'Droma RF Power Amplifier Linearization, 2006

This course reviews key RF transmitter power amplifier linearization issues. The underlying power amplifier nonlinearity problem, that of the competing requirements of power amplifier efficiency and linear signal transmission paths for bandwidth efficient, modulation-complex signals, is presented, together with the linearization solution. Modern linearization schemes and where linearization research, and technology, is headed is addressed.

Basics of RF PA Design

Cripps, Steve C. Basics of RF PA Design, 2007

RF power amplifiers have received a great deal of attention and development effort over the last decade, mainly due to the challenging requirements of the wireless communications industry. This effort has not only led to some impressive progress in PA performance, it has also led to some revisions and rethinking in traditional PA theory. this course will highlight how these ...


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Standards related to Gallium

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