78,186 resources related to Gallium
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2015 IEEE Energy Conversion Congress and Exposition
The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum
2014 IEEE Photonics Society Summer Topical Meeting Series
The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.
2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
Electron Devices and Solid-State Circuits
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Gordon Hopkinson; Reno Harboe Sorensen; Bruno Leone; Roland Meynart; Ali Mohammadzadeh; Wilfried Rabaud IEEE Transactions on Nuclear Science, 2008
Cobalt60, 60 MeV proton and heavy ion tests have been performed on InGaAs and amorphous silicon microbolometer arrays with CMOS readout circuits. The readout circuits showed latch-up at threshold LETs~14 MeV/mg/cm2, but the total dose and displacement damage effects were negligible for low earth orbit conditions. Effects in a microbolometer array tested, for use in Mercury orbit, to 100 krd(Si) ...
Chengyu Gan; K. Danai Control Applications, 1999. Proceedings of the 1999 IEEE International Conference on, 1999
A model-based recurrent neural network (MBRNN) is introduced for modeling nonlinear dynamic systems. The topology of MBRNN as well as its initial weights are defined according to the linearized state-space model of the plant. As such, the MBRNN has the ability to incorporate the analytical knowledge of the plant in its formulation. With its original topology intact, the MBRNN can ...
S. Nakamura Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International, 1994
Highly efficient InGaN/AlGaN double-heterostructure blue-light-emitting diodes (LEDs) with an external quantum efficiency of 5.4% were fabricated by codoping Zn and Si into an InGaN active layer. The output power was as high as 3 mW at a forward current of 20 mA. The peak wavelength and the full width at half- maximum of the electroluminescence of blue LEDs were 450 ...
T. Sugeta; T. Ikoma; H. Yanai Proceedings of the IEEE, 1968
The possibility of a bulk neuristor using bulk negative resistance effects, including the Gunn effect, is presented. The resemblance between the properties of the neuristor and of the Gunn-effect device is noted. T- and S-junctions of neuristors have been designed using Gunn-effect devices. All digital logic functions can be realized by the proposed bulk neuristor.
K. Riepe; H. Leier; A. Marten; U. Guttich; J. M. Dieudonne; K. H. Bachem IEEE Microwave and Guided Wave Letters, 1994
Design, fabrication and performance of Ka-band voltage-controlled oscillators (VCOs) are described. High-speed self-aligned GaInP/GaAs heterojunction bipolar transistors (HBTs) as active devices and varactor diodes using the base-collector junction of the HBT structure are implemented in the VCOs. The HBTs have an emitter area of 2×1.5 μm×10 μm and incorporate a highly carbon doped base layer and a thin GaInP hole ...
Power Electronics, IEEE Transactions on, 2014
GaN field effect power transistors based on Si substrate show low on-state resistance and very small Cgs capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses ...
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, 2012
Novel X-band high-power monolithic SPST/SPDT switches in coplanar GaN technology are presented. The SPDT switch exhibits 1:6dB on-state insertion loss and better than 20dB isolation. Power handling measurements have shown that the 1dB compression point occurs with an input power equal to 38dBm at 10GHz. A combination of techniques were used to yield higher power handling while preserving low loss ...
Semiconductor Device Research Symposium, 2003 International, 2003
The paper presents the investigation of the low- frequency noise characteristics of D-mode and E-mode 0.13 μm In0.65GaAs p-HEMT under influence of impact ionisation induced gate hole current. The D-mode p-HEMT having a InP Schottky gate showed Lorentzian low-frequency noise components and drift of corner frequency due to drain bias change, while the InAlAs gate E-mode p-HEMT showed no change ...
Microwave Theory and Techniques, IEEE Transactions on, 2015
In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency ...
Power Electronics, IEEE Transactions on, 2016
The cascode structure is widely used for high-voltage normally-on wide-bandgap devices. However, the interaction between the high-voltage normally-on device and the low-voltage normally-off Si MOSFET may induce undesired features. This paper analyzes the voltage distribution principle during the turn-off transition as well as the zero-voltage-switching (ZVS) principle during the turn-on transition for cascode GaN devices. The capacitance mismatch between high-voltage ...
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