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2015 IEEE Energy Conversion Congress and Exposition
The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum
2014 IEEE Photonics Society Summer Topical Meeting Series
The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.
2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
Electron Devices and Solid-State Circuits
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Dong-Uk Kim; Sunghwan Kim; Jeongkug Lee; Seong-Ran Jeon; Heonsu Jeon Photonics Technology Letters, IEEE, 2011
We report the fabrication of a GaN-based membrane-type photonic crystal (PC) band-edge laser (BEL) that requires a smaller PC active area than previous designs due to strong field confinement. A honeycomb-lattice PC was designed such that the Γ1 monopole band-edge mode fell within the emission band of InGaN quantum wells. The BEL exhibited pulsed lasing at room-temperature when optically pumped ...
Menkad, T.; Alexandrov, D.; Butcher, K.S.A. Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on, 2012
A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.
Camin, D.V.; Fedyakin, N.; Pessina, G.; Previtali, E. Nuclear Science, IEEE Transactions on, 1995
Monolithic preamplifiers using large gate-area Gallium-Arsenide Metal- Semiconductor Field-Effect Transistors (GaAs MESFETs) at the input have been designed and fabricated using an ion-implanted GaAs process. Large gate-area is necessary to obtain low series noise. A differential voltage-sensitive preamplifier has at the input two MESFETs with a gate width W=6000 μm, it is fully DC coupled, has a large common-mode rejection ...
Spielman, B.E.; Sudbury, R.W. Microwave Symposium Digest, 1984 IEEE MTT-S International, 1984
Current activity for millimeter-wave circuits is focusing on applications within the frequency range from about 30 GHz to 100 GHz. This activity is driven, for defense purposes, by four generic areas of application: 1) radar (e.g., fire-control) ; 2) communications (e.g., ground-satellite and satellite-satellite); 3) missile seekers (active and passive); and 4) electronic warfare (e.g., surveillance).
Lee, Jong-Lam; Mun, Jae Kyoung; Kim, Haecheon; Jai-Jin Lee; Park, Hyung-Moo Electron Devices, IEEE Transactions on, 1996
A high-efficient GaAs power metal semiconductor field effect transistor operating at a drain voltage of 2.3 V has been developed for low distortion power applications. The device has been fabricated on an epitaxial layer with a high-low doped structure grown by molecular beam epitaxy. The MESFET with a gate length of 0.8 μm and a total gate width of 21.16 ...
Cripps, Steve C. Basics of RF PA Design, 2007
RF power amplifiers have received a great deal of attention and development effort over the last decade, mainly due to the challenging requirements of the wireless communications industry. This effort has not only led to some impressive progress in PA performance, it has also led to some revisions and rethinking in traditional PA theory. this course will highlight how these ...
Má irtí n O'Droma RF Power Amplifier Linearization, 2006
This course reviews key RF transmitter power amplifier linearization issues. The underlying power amplifier nonlinearity problem, that of the competing requirements of power amplifier efficiency and linear signal transmission paths for bandwidth efficient, modulation-complex signals, is presented, together with the linearization solution. Modern linearization schemes and where linearization research, and technology, is headed is addressed.
The Long Term Reliability of Gallium Nitride
Is silicon dead? APEC 2013 Rap Session
Transphorm: Redefining Energy Efficiency
Transphorm: GaN Champions
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
GaN and SiC, Fact vs. Friction: APEC 2013 KeyTalk with Dr. Umesh Mishra
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