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Gallium is a chemical element that has the symbol Ga and atomic number 31. (

Conferences related to Gallium

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2015 IEEE Energy Conversion Congress and Exposition

The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.

2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum

2014 IEEE Photonics Society Summer Topical Meeting Series

The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.

2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Electron Devices and Solid-State Circuits

  • 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Photonics; Nanoelectronic, RF & Microwave Devices and Circuits, Device and Circuit Reliability, Power Electronics, Communication Circuits, Sensor and MEMS, Digital and Memory Circuits, Organic Devices, Novel Analog Circuits, Bioelectronics,Data Processing Circuits.

  • 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    EDSSC 2011 is the 7th in a series of very successful conferences initiated by IEEE ED/SSC Hong Kong joint Chapter.EDSSC 2011 is a two-day program comprising broad areas in electron devices and solid-state circuits. Over two days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on the emerging challenges and opportunities.

  • 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Nanoelectronics, Memory Device and Technology, Thin Gate Dielectrics, Photonic Devices, RF & Microwave Devices, Power Devices, Sensors, imagers and MEMS, Analog Circuits, Biomedical Circuits Data Conversion Circuits Digital and Memory Circuits, Power Management Circuits, RF & Microwave Circuits, and Wireless and Wireline Communication Circuits

  • 2009 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    The EDSSC 2009 will cover all aspects of devices and circuits, including memory devices, thin gate dielectrics, photonic devices, power devices, RF devices, analog circuits, digital circuits, and RF and microwave circuits

  • 2008 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    EDSSC 08 is a three-day program comprising broad areas in electron devices and solid-state circuits.

  • 2007 IEEE Conference on Electron Devices and Solid- State Circuits (EDSSC)

    Nanoelectronics ,Memory Device and Technology,Thin Gate Dielectrics ,Photonic Devices ,RF & Microwave Devices, Power Devices ,Sensors and MEMS ,Low-Power Circuits ,GHz Digital Circuits ,Analog Circuits ,Photonic Integrated Circuits RF & Microwave Circuits, Power Circuits ,IC Manufacturing and Packaging

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Periodicals related to Gallium

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.

Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.

Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.

Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.

Xplore Articles related to Gallium

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Radiation Effects in InGaAs and Microbolometer Infrared Sensor Arrays for Space Applications

Gordon Hopkinson; Reno Harboe Sorensen; Bruno Leone; Roland Meynart; Ali Mohammadzadeh; Wilfried Rabaud IEEE Transactions on Nuclear Science, 2008

Cobalt60, 60 MeV proton and heavy ion tests have been performed on InGaAs and amorphous silicon microbolometer arrays with CMOS readout circuits. The readout circuits showed latch-up at threshold LETs~14 MeV/mg/cm2, but the total dose and displacement damage effects were negligible for low earth orbit conditions. Effects in a microbolometer array tested, for use in Mercury orbit, to 100 krd(Si) ...

Model-based recurrent neural network for modeling nonlinear dynamic systems

Chengyu Gan; K. Danai Control Applications, 1999. Proceedings of the 1999 IEEE International Conference on, 1999

A model-based recurrent neural network (MBRNN) is introduced for modeling nonlinear dynamic systems. The topology of MBRNN as well as its initial weights are defined according to the linearized state-space model of the plant. As such, the MBRNN has the ability to incorporate the analytical knowledge of the plant in its formulation. With its original topology intact, the MBRNN can ...

High-power InGaN/AlGaN double-heterostructure blue-light-emitting diodes

S. Nakamura Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International, 1994

Highly efficient InGaN/AlGaN double-heterostructure blue-light-emitting diodes (LEDs) with an external quantum efficiency of 5.4% were fabricated by codoping Zn and Si into an InGaN active layer. The output power was as high as 3 mW at a forward current of 20 mA. The peak wavelength and the full width at half- maximum of the electroluminescence of blue LEDs were 450 ...

Bulk neuristor using the Gunn effect

T. Sugeta; T. Ikoma; H. Yanai Proceedings of the IEEE, 1968

The possibility of a bulk neuristor using bulk negative resistance effects, including the Gunn effect, is presented. The resemblance between the properties of the neuristor and of the Gunn-effect device is noted. T- and S-junctions of neuristors have been designed using Gunn-effect devices. All digital logic functions can be realized by the proposed bulk neuristor.

35-40 GHz monolithic VCOs utilizing high-speed GaInP/GaAs HBTs

K. Riepe; H. Leier; A. Marten; U. Guttich; J. M. Dieudonne; K. H. Bachem IEEE Microwave and Guided Wave Letters, 1994

Design, fabrication and performance of Ka-band voltage-controlled oscillators (VCOs) are described. High-speed self-aligned GaInP/GaAs heterojunction bipolar transistors (HBTs) as active devices and varactor diodes using the base-collector junction of the HBT structure are implemented in the VCOs. The HBTs have an emitter area of 2×1.5 μm×10 μm and incorporate a highly carbon doped base layer and a thin GaInP hole ...

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Educational Resources on Gallium

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Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal Behavior

Power Electronics, IEEE Transactions on, 2014

GaN field effect power transistors based on Si substrate show low on-state resistance and very small Cgs capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses ...

High-power broadband GaN HEMT SPST/SPDT switches based on resonance inductors and shunt-stacked transistors

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European, 2012

Novel X-band high-power monolithic SPST/SPDT switches in coplanar GaN technology are presented. The SPDT switch exhibits 1:6dB on-state insertion loss and better than 20dB isolation. Power handling measurements have shown that the 1dB compression point occurs with an input power equal to 38dBm at 10GHz. A combination of techniques were used to yield higher power handling while preserving low loss ...

Low-frequency noise characteristics of 0.13 &mu;m In<sub>0.65</sub>GaAs p-HEMT under the influence of impact ionization induced hole current

Semiconductor Device Research Symposium, 2003 International, 2003

The paper presents the investigation of the low- frequency noise characteristics of D-mode and E-mode 0.13 μm In0.65GaAs p-HEMT under influence of impact ionisation induced gate hole current. The D-mode p-HEMT having a InP Schottky gate showed Lorentzian low-frequency noise components and drift of corner frequency due to drain bias change, while the InAlAs gate E-mode p-HEMT showed no change ...

The Doherty Power Amplifier: Review of Recent Solutions and Trends

Microwave Theory and Techniques, IEEE Transactions on, 2015

In this paper, an extensive review of the most up-to-date papers on microwave Doherty power amplifiers is presented. The main applications are discussed, together with the employed semiconductor technologies. The different research trends, all aimed to improve the advantages of the Doherty scheme and to solve its inherent drawbacks, are presented. The first considered topic is the maximization of efficiency ...

Avoiding Si MOSFET Avalanche and Achieving Zero-Voltage Switching for Cascode GaN Devices

Power Electronics, IEEE Transactions on, 2016

The cascode structure is widely used for high-voltage normally-on wide-bandgap devices. However, the interaction between the high-voltage normally-on device and the low-voltage normally-off Si MOSFET may induce undesired features. This paper analyzes the voltage distribution principle during the turn-off transition as well as the zero-voltage-switching (ZVS) principle during the turn-on transition for cascode GaN devices. The capacitance mismatch between high-voltage ...

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