Gallium

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Gallium is a chemical element that has the symbol Ga and atomic number 31. (Wikipedia.org)






Conferences related to Gallium

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2019 41st Annual International Conference of the IEEE Engineering in Medicine & Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops andinvitedsessions of the latest significant findings and developments in all the major fields ofbiomedical engineering.Submitted papers will be peer reviewed. Accepted high quality paperswill be presented in oral and postersessions, will appear in the Conference Proceedings and willbe indexed in PubMed/MEDLINE & IEEE Xplore


2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology


2019 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.


2019 IEEE Photonics Conference (IPC)

The IEEE Photonics Conference, previously known as the IEEE LEOS Annual Meeting, offers technical presentations by the world’s leading scientists and engineers in the areas of lasers, optoelectronics, optical fiber networks, and associated lightwave technologies and applications. It also features compelling plenary talks on the industry’s most important issues, weekend events aimed at students and young photonics professionals, and a manufacturer’s exhibition.


2019 IEEE Photonics Society Summer Topical Meeting Series (SUM)

The Topical Meetings of the IEEE Photonics Society are the premier conference series for exciting, new areas in photonic science, technology, and applications; creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


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Periodicals related to Gallium

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


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Xplore Articles related to Gallium

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Molecular Beam Epitaxy of Heterostructures on the Basis of III-V Materials for UHF Transistors

2006 16th International Crimean Microwave and Telecommunication Technology, 2006

Described is MBE technology, whose essence is the growth of heterostructures for UHF transistors including nitride technology. We demonstrate that buffer layer optimization allows improving GaAs FETs parameters. Procedures of AlGaAs/InGaAs/GaAs heterostructures growth for PHEMT, as well as the heterostructures themselves, have been also optimized. Presented in this paper is the data on MBE technology development, especially as regards GaN/AlGaN ...


Growth and properties III–V films and multilayered structures on fianite substrates and buffer layers

2010 3rd International Nanoelectronics Conference (INEC), 2010

The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure ...


Generation and detection of THz waves using InGaAs photoconductive antenna with 1.55 μm excitation

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006

Photoconductive antennas made on low-temperature-grown InGaAs were tested as THz generators and detectors with 1550 nm excitation. The antennas work quite well as detectors, but optimizations are necessary to realize efficient emitters.


Spatially resolved, polarized photoluminescence from wurtzite InGaAs/GaAs nanoneedles

CLEO/QELS: 2010 Laser Science to Photonic Applications, 2010

We spatially resolve photoluminescence from wurtzite InGaAs/GaAs core-shell nanoneedles and characterize their nonuniform quantum well emission. Polarization measurements reveal anisotropy behavior that is reminiscent of GaN and other wurtzite materials.


Crystal growth and properties of column-III nitrides for short wavelength light emitters

Proceedings of LEOS '93, 1993

Summary form only. Aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN) and their alloys AlGaInN, the so called column-III nitrides are promising candidates as the material for fabrication of very short wavelength light emitters in the blue to near ultraviolet region, because they have direct transition type band structure with the bandgap energy ranging from 1.9 eV to 6.2 ...


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Educational Resources on Gallium

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IEEE-USA E-Books

  • Molecular Beam Epitaxy of Heterostructures on the Basis of III-V Materials for UHF Transistors

    Described is MBE technology, whose essence is the growth of heterostructures for UHF transistors including nitride technology. We demonstrate that buffer layer optimization allows improving GaAs FETs parameters. Procedures of AlGaAs/InGaAs/GaAs heterostructures growth for PHEMT, as well as the heterostructures themselves, have been also optimized. Presented in this paper is the data on MBE technology development, especially as regards GaN/AlGaN heterostructures with two-dimensional electronic gas for HEMT

  • Growth and properties III–V films and multilayered structures on fianite substrates and buffer layers

    The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure and morphology of YSZ buffer layers. It is shown, that III-V films received on YSZ substrates and buffer layers have single crystalline structure, good morphology and high electrophysical and photoluminescent properties. The use of the two-layer buffer in comparison with the single YSZ buffer improves adhesion of III-V films and raises its structural and electric homogeneity.

  • Generation and detection of THz waves using InGaAs photoconductive antenna with 1.55 μm excitation

    Photoconductive antennas made on low-temperature-grown InGaAs were tested as THz generators and detectors with 1550 nm excitation. The antennas work quite well as detectors, but optimizations are necessary to realize efficient emitters.

  • Spatially resolved, polarized photoluminescence from wurtzite InGaAs/GaAs nanoneedles

    We spatially resolve photoluminescence from wurtzite InGaAs/GaAs core-shell nanoneedles and characterize their nonuniform quantum well emission. Polarization measurements reveal anisotropy behavior that is reminiscent of GaN and other wurtzite materials.

  • Crystal growth and properties of column-III nitrides for short wavelength light emitters

    Summary form only. Aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN) and their alloys AlGaInN, the so called column-III nitrides are promising candidates as the material for fabrication of very short wavelength light emitters in the blue to near ultraviolet region, because they have direct transition type band structure with the bandgap energy ranging from 1.9 eV to 6.2 eV at room temperature (RT).<<ETX>>

  • High speed devices

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  • Few-cycle OPCPA system with more than 1 µJ at 143 kHz

    An OPCPA system delivering 8.8 fs pulses with 1.3 μJ of energy at 143 kHz repetition rate is presented. Pump and seed for the parametric amplification are simultaneously generated by a broadband Ti:sapphire oscillator.

  • Influence of GaN surface morphology on characteristics of Al<inf>0,3</inf>Ga<inf>0,7</inf>N/GaN heterostructures created by molecular beam epitaxy

    The technique of forming III-N layers with low defects level is developed. It is based on method of molecular beam epitaxy with atomic force microscopy using. It is demonstrated that the structure perfection of layers, which is estimated by the surface defects number, is directly connected with two- dimensional electron gas (2DEG) characteristics in formed heterostructures.

  • Velocity overshoot effects and transit times in III-V nitride HFETs : a Monte Carlo study

    Monte Carlo simulation of AlGaN/GaN HEMTs were carried out and compared with GaAs based devices. The following outcomes of our simulations are noteworthy: i) partially due to the relatively heavy electron effective mass in GaN, the velocities of the electrons are mostly below the steady state values through most of the channel; ii) unlike what is observed in GaAs based short channel devices, there is no pronounced overshoot effect, even at high drain source biases, due to increased scattering; iii) our simulations show that the suppression of overshoot is directly related to the length of the high field region. This length is quite small for usual bias conditions. We suggest that a non-uniform composition of the barrier region could conceivably help in spreading out the high field region, which is present at the drain end of the device. Other results of the Monte Carlo simulation include transconductance, noise information and unity current gain frequency.

  • Resonant terahertz detection of 2DEG with grating coupler

    Plasmon-polariton detection by 2DEG has been modelled in several kinds of hetero-structures (AlGaN/GaN, InAlN/GaN, SiGe/Si/SiGe, AlGaAs/GaAs) with grating coupler. The resonances were discussed according to the heterojonction nature, the grating aspect ratio, the thickness of the layer above the quantum well and the sheet carrier concentration in the quantum well (QW) at various temperatures. The objective is to make possible the tuning of the resonances versus frequency in order to facilitate the control of the terahertz detection.



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