52 resources related to Gallium
- Topics related to Gallium
- IEEE Organizations related to Gallium
- Conferences related to Gallium
- Periodicals related to Gallium
- Most published Xplore authors for Gallium
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufac
2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.
2014 IEEE Photonics Society Summer Topical Meeting Series
The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.
2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
Electron Devices and Solid-State Circuits
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Lo, K.C.; Ho, H.P.; Chu, P.K.; Cheah, K.W. Optoelectronics, Proceedings of the Sixth Chinese Symposium, 2003
The preparation of gallium nitride (GaN) and gallium oxide (Ga2O3) nano- ribbons were accomplished by plasma immersion ion implantation (PIII) of nitrogen into GaAs. After PIII of nitrogen, rapid thermal annealing (RTA) was conducted on the sample. For samples annealed at 850°C for 2 minutes we observed the formation of GaN on the GaAs surface. Raman spectrum revealed a peak ...
Crabtree, G.; Jester, Theresa L.; Fredric, C.; Nickerson, J.; Meemongkolkiat, V.; Rohatgi, A. Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE, 2005
Results of efforts at Shell Solar to implement the use of gallium dopant as a commercial solar cell production process are presented. Both small area cell results and production related activities and results are discussed. Many researchers have demonstrated that gallium effectively eliminates light induced degradation (LID) of the bulk lifetime, but less effort has been dedicated to implement gallium ...
Menkad, T.; Alexandrov, D.; Butcher, K.S.A. Electrical & Computer Engineering (CCECE), 2012 25th IEEE Canadian Conference on, 2012
A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.
Han Yan; Zhiyin Gan; Sheng Liu Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2012 13th International Conference on, 2012
Currently, most gallium nitride based light emitting diodes (LEDs) are fabricated with polar c-plane  direction. This orientation of gallium nitride has a large polarization electric field. Therefore, the device performance is adversely affected by strain induced piezoelectric polarization. The strain affects crystalline quality as well as optical and electrical properties of LED epitaxial film. In this paper, we report ...
Shang-Chao Hung; Yan-Kuin Su; Te-Hua Fang; Tsair-Chun Liang Nano/Micro Engineered and Molecular Systems, 2006. NEMS '06. 1st IEEE International Conference on, 2006
In this study, we analyzed gallium nitride nanotubes which were formed highly oriented on a c-axis perpendicular to substrate surface by using nanoindentation technique. We were focusing experimental observations on the nanomechanical properties. The behavior of the gallium nitride nanotube breakage accompanying with compression test was examined using a nanoindentation system enabling the application of compressive force to the nanotubes ...
Cripps, Steve C. Basics of RF PA Design, 2007
RF power amplifiers have received a great deal of attention and development effort over the last decade, mainly due to the challenging requirements of the wireless communications industry. This effort has not only led to some impressive progress in PA performance, it has also led to some revisions and rethinking in traditional PA theory. this course will highlight how these ...
Má irtí n O'Droma RF Power Amplifier Linearization, 2006
This course reviews key RF transmitter power amplifier linearization issues. The underlying power amplifier nonlinearity problem, that of the competing requirements of power amplifier efficiency and linear signal transmission paths for bandwidth efficient, modulation-complex signals, is presented, together with the linearization solution. Modern linearization schemes and where linearization research, and technology, is headed is addressed.
The Long Term Reliability of Gallium Nitride
Is silicon dead? APEC 2013 Rap Session
Transphorm: Redefining Energy Efficiency
Transphorm: GaN Champions
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
GaN and SiC, Fact vs. Friction: APEC 2013 KeyTalk with Dr. Umesh Mishra
No standards are currently tagged "Gallium"