Gallium

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Gallium is a chemical element that has the symbol Ga and atomic number 31. (Wikipedia.org)






Conferences related to Gallium

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2015 IEEE Energy Conversion Congress and Exposition

The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.

  • 2014 IEEE Energy Conversion Congress and Exposition (ECCE)

    Those companies who have an interest in selling to: research engineers, application engineers, strategists, policy makers, and innovators, anyone with an interest in energy conversion systems and components.

  • 2013 IEEE Energy Conversion Congress and Exposition (ECCE)

    The scope of the congress interests include all technical aspects of the design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power conversion and power electronics.

  • 2012 IEEE Energy Conversion Congress and Exposition (ECCE)

    The IEEE Energy Conversion Congress and Exposition (ECCE) will be held in Raleigh, the capital of North Carolina. This will provide a forum for the exchange of information among practicing professionals in the energy conversion business. This conference will bring together users and researchers and will provide technical insight as well.

  • 2011 IEEE Energy Conversion Congress and Exposition (ECCE)

    IEEE 3rd Energy Conversion Congress and Exposition follows the inagural event held in San Jose, CA in 2009 and 2nd meeting held in Atlanta, GA in 2010 as the premier conference dedicated to all aspects of energy processing in industrial, commercial, transportation and aerospace applications. ECCE2011 has a strong empahasis on renewable energy sources and power conditioning, grid interactions, power quality, storage and reliability.


2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum


2014 IEEE Photonics Society Summer Topical Meeting Series

The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.


2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.


2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

Electron Devices and Solid-State Circuits

  • 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Photonics; Nanoelectronic, RF & Microwave Devices and Circuits, Device and Circuit Reliability, Power Electronics, Communication Circuits, Sensor and MEMS, Digital and Memory Circuits, Organic Devices, Novel Analog Circuits, Bioelectronics,Data Processing Circuits.

  • 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    EDSSC 2011 is the 7th in a series of very successful conferences initiated by IEEE ED/SSC Hong Kong joint Chapter.EDSSC 2011 is a two-day program comprising broad areas in electron devices and solid-state circuits. Over two days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on the emerging challenges and opportunities.

  • 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

    Nanoelectronics, Memory Device and Technology, Thin Gate Dielectrics, Photonic Devices, RF & Microwave Devices, Power Devices, Sensors, imagers and MEMS, Analog Circuits, Biomedical Circuits Data Conversion Circuits Digital and Memory Circuits, Power Management Circuits, RF & Microwave Circuits, and Wireless and Wireline Communication Circuits

  • 2009 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    The EDSSC 2009 will cover all aspects of devices and circuits, including memory devices, thin gate dielectrics, photonic devices, power devices, RF devices, analog circuits, digital circuits, and RF and microwave circuits

  • 2008 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC)

    EDSSC 08 is a three-day program comprising broad areas in electron devices and solid-state circuits.

  • 2007 IEEE Conference on Electron Devices and Solid- State Circuits (EDSSC)

    Nanoelectronics ,Memory Device and Technology,Thin Gate Dielectrics ,Photonic Devices ,RF & Microwave Devices, Power Devices ,Sensors and MEMS ,Low-Power Circuits ,GHz Digital Circuits ,Analog Circuits ,Photonic Integrated Circuits RF & Microwave Circuits, Power Circuits ,IC Manufacturing and Packaging


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Periodicals related to Gallium

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Gallium

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A partially transparent Jaumann absorber applied to an aircraft wing profile

Motevasselian, A.; Jonsson, B.L.G. Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE, 2010

We designed a partially transparent Jaumann absorber. The metallic sheet of the Jaumann was replaced by a triangular lattice Gangbuster FSS together with a polarizer. This design was applied to a wing front end. We showed that the monostatic RCS performance of the wing improves. Furthermore, the resulting screen is partially transparent around 1GHz which is assumed to be an ...


Radiation damage of InGaAs photodiodes by high-temperature electron and neutron irradiation

Ohyama, H.; Hayama, K.; Simoen, E.; Claeys, C.; Hirao, T.; Onoda, S.; Takakura, K. Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on, 2003

First Page of the Article ![](/xploreAssets/images/absImages/01442395.png)


Switching time measurements of GaAs/AlAs and InGaAs/AlAs resonant tunnelling diodes

Leung, C.S.Y.; Wintreert-Fouquet, M.; Skellern, D.J. Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on, 1998

Resonant tunnelling diodes (RTDs) have attracted much interest because of their potential use for high frequency and high speed applications. An important study of RTDs is therefore to analyse the high speed switching time between stable states of a device. The rise time calculation technique described by Diamond et al. for simple pulse-forming circuits has been used to measure the ...


System level evaluation of Silicon imager based see-through Silicon application

Wei Zhou; Max, G.; Hart, D. 3D Systems Integration Conference (3DIC), 2011 IEEE International, 2012

This paper first reviews the novel technology which enables the silicon based imagers (CCD or CMOS) for see-through silicon inspection applications; then discusses a comprehensive mathematical model to simulate the inspection platform performances (resolution, throughput and cost) based on InGaAs cameras and Silicon cameras; at the end the feasibility and advantages of silicon imagers based inspection platforms for see-through silicon ...


Fast quantum-dot saturable absorber for passive mode-locking of solid-State lasers

Rafailov, E.U.; White, S.J.; Lagatsky, A.A.; Miller, A.; Sibbett, W.; Livshits, D.A.; Zhukov, A.E.; Ustinov, V.M. Photonics Technology Letters, IEEE, 2004

We demonstrate stable mode-locking in a Yb : KYW laser by using a quantum-dot (QD) saturable absorber. A fast component in the absorption decay in this QD structure has been measured by pump-probe technique to be ∼1 ps.


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