Gallium

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Gallium is a chemical element that has the symbol Ga and atomic number 31. (Wikipedia.org)






Conferences related to Gallium

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2018 11th Global Symposium on Millimeter Waves (GSMM)

The main theme of the GSMM2018 is Millimeter-wave Propagation: Hardware, Measurements and Systems. It covers millimeter-wave and THz devices, circuits, systems, and applications, with a special focus on mmWave propagation. The conference will include keynote talks, technical sessions, panels, and exhibitions on the listed topics.

  • 2017 10th Global Symposium on Millimeter-Waves (GSMM)

    The main theme of the symposium is Millimeter-Wave and Terahertz Sensing and Communications. It covers millimeter- wave and THz antennas, circuits, devices, systems and applications.

  • 2016 Global Symposium on Millimeter Waves (GSMM) & ESA Workshop on Millimetre-Wave Technology and Applications

    The main theme of the conference is millimeter-wave and terahertz sensing and communications and the conference covers different topics related to millimeter-wave and terahertz technologies, such as: antennas and propagation, passive and active devices, radio astronomy, earth observation and remote sensing, communications, wireless power transfer, integration and packaging, photonic systems, and emerging technologies.

  • 2015 Global Symposium On Millimeter Waves (GSMM)

    The main theme of the GSMM 2015 is “Future Millimeter-wave and Terahertz Wireless and Wireline”. It will cover all emerging and future millimeter wave and terahertz software and hardware aspects ranging from communicating devices, circuits, systems and applications to passive and active sensing and imaging technologies and applications. The GSMM 2015 will feature world-class keynote speeches, technical sessions, panel discussions and industrial exhibitions in the following (but not limited to) topics listed below.In addition to the regular program, the GSMM 2015 will organize a unique industrial forum for presenting and discussing future wireless technologies and trends including 5G and Terahertz Wireless Systems.

  • 2012 5th Global Symposium on Millimeter Waves (GSMM 2012)

    The aim of the conferences is to bring together people involved in research and development of millimeter-wave components, equipment and systems, and to explore common areas.

  • 2009 Global Symposium On Millimeter Waves (GSMM 2009)

    The GSMM2009 will be held in Sendai, Japan from April 20 to April 22, 2009. The GSMM2009 is the second international conference in its name after the three conferences of TSMMW, MINT-MIS, and MilliLab Workshop on Millimeter-wave Technology and Applications were integrated into GSMM (Global Symposium on Millimeter Waves) in 2007. The main theme of the GSMM2009 is "Millimeter Wave Communications at Hand" and it will focus on millimeter wave devices and systems to realize Giga-bit wireless applications. The

  • 2008 Global Symposium On Millimeter Waves (GSMM 2008)

    Frequency Management and Utilization, Millimeter-Wave Communication Systems, Devices and Circuit Technologies, Wireless Access Systems, Mobile Access Systems, Satellite Communications, LANs and PANs, Home Link Systems, Photonics, Antennas and Propagation, Phased Array Antennas, Signal Processing, Wearable Devices and Systems, Automotive Radars and Remote Sensing, Supporting and Related Technologies


2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC)

The conference program will consist of plenary lectures, symposia, workshops and invitedsessions of the latest significant findings and developments in all the major fields of biomedical engineering.Submitted papers will be peer reviewed. Accepted high quality papers will be presented in oral and postersessions, will appear in the Conference Proceedings and will be indexed in PubMed/MEDLINE


2018 48th European Microwave Conference (EuMC)

The Premier European event for the disemination of knowledge about Microwave Technology.The event caters for the seasoned industrial engineer as well as the graduate student. Sessionsand workshops are held on the full range of microwave technology from field theory, throughcomponents and subsystems to systems.

  • 2017 47th European Microwave Conference (EuMC)

    The Premier European event for the disemination of knowledge about Microwave Technology.The event caters for the seasoned industrial engineer as well as the graduate student. Sessions and workshops are held on the full range of microwave technology from field theory, through components and subsystems to systems.

  • 2016 46th European Microwave Conference (EuMC)

    The Premier European event for the disemination of knowledge about Microwave Technology. The event caters for the seasoned industrial engineer as well as the graduate student. Sessions and workshops are held on the full range of microwave technology from field theory, through components and subsystems to systems.

  • 2015 European Microwave Conference (EuMC 2015)

    The 45th European Microwave Conference (EuMC) represents the main event in the European Microwave Week 2015, the largest event in Europe dedicated to microwave components, systems and technology. It is the premier event to present the current status and future trends in the field of microwave, millimeter-wave and terahertz systems and technologies. A broad range of high frequency related topics, from materials and technologies to integrated circuits, systems and applications will be addressed in all their aspects: theory, simulation, design and measurement.The European Microwave Conference provides many opportunities of networking and interaction with international experts in a wide variety of specialties, attracting delegates with academic as well as industrial backgrounds. In addition to scientific papers, contributions on industrial applications are also encouraged, covering the fields of instrumentation, medical, telecommunication, radar, space, automotive and defense systems.

  • 2014 44th European Microwave Conference (EuMC)

    EuMC is the premier European conference in the microwave field, which represent the ideal venue for prospective authors to present the status and trends in microwave and millimetre-wave systems and frequency related topics, from materials and technologies to integrated circuits, systems their aspects: theory, simulation, design and measurement including passive components, design of high frequency and high data rate photonics, highly stable and noiseless microwave wave sources, new linearisation techniques and the impact of new packaging technologies.

  • 2013 European Microwave Conference (EuMC)

    Status and trends in microwave and millimetre -wave systems and technologies. High-frequency related topics, from materials and technologies to integrated circuits, systems and applications in alltheir aspects: theory, simulation, design and measurement including passive components, modelling and design of high frequency and high data rate photonics, highly stable and noiseless microwave and millimetre-wave sources, new linearisation techniques and the impact of new packaging technologies on development

  • 2012 European Microwave Conference (EuMC)

    Microwave and millimeter wave: active/passive devices, antennas, electromagnetics, bio-interaction, circuits, manufacturing and measurement, MEMS, meta-materials, sensor networks, cognitive radio, 4G communications, space technology and applications.

  • 2011 European Microwave Conference (EuMC)

    Status and trends in microwave and millimetre-wave systems and technologies. High-frequency related topics, from materials and technologies to integrated circuits, systems and applications in all their aspects: theory, simulation, design and measurement including passive components, modelling and design of high frequency and high data rate photonics, highly stable and noiseless microwave and millimetre-wave sources, new linearisation techniques and the impact of new packaging technologies on development app

  • 2010 European Microwave Conference (EuMC)

    The European Microwave Conference is the premier forum for presentation of the present status and future trends in the field of microwave, millimetre- and submillimetre-wave systems and technologies.

  • 2009 European Microwave Conference (EuMC)

    The 39th European Microwave Conference (EuMC), is the core of the European Microwave Week 2009, the largest event in Europe dedicated to microwave electronics. It is the premier forum to present the actual status and future trends in the field of materials and technologies to integrated circuits, systems and applications will be addressed in all their aspects: theory, simulation, design and measurement.

  • 2008 European Microwave Conference (EuMC)

    The 38th European Microwave Conference (EuMC) in Amsterdam, The Netherlands, from 27 to 31 October, is the core of the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. It is the premier forum to present the actual status and future trends in the field of materials and technologies to integrated circuits, systems and applications will be addressed in all their aspects: theory, simulation, design and measurement.

  • 2007 European Microwave Conference (EuMC)

    Status and trends in microwave and millimetre-wave systems and technologies. High-frequency related topics, from materials and technologies to integrated circuits, systems and applications in all their aspects: theory, simulation, design and measurement including passive components, modelling and design of high frequency and high data rate photonics, highly stable and noiseless microwave and millimetre-wave sources, new linearisation techniques and the impact of new packaging.

  • 2006 European Microwave Conference (EuMC)

  • 2005 European Microwave Conference (EuMC)

  • 2004 European Microwave Conference (EuMC)

  • 2003 European Microwave Conference (EuMC)

  • 1998 28th European Microwave Conference (EuMC)

  • 1997 27th European Microwave Conference (EuMC)


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Periodicals related to Gallium

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Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Communications, IEEE Transactions on

Telephone, telegraphy, facsimile, and point-to-point television, by electromagnetic propagation, including radio; wire; aerial, underground, coaxial, and submarine cables; waveguides, communication satellites, and lasers; in marine, aeronautical, space and fixed station services; repeaters, radio relaying, signal storage, and regeneration; telecommunication error detection and correction; multiplexing and carrier techniques; communication switching systems; data communications; and communication theory. In addition to the above, ...


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


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Xplore Articles related to Gallium

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Molecular Beam Epitaxy of Heterostructures on the Basis of III-V Materials for UHF Transistors

[{u'author_order': 1, u'affiliation': u'Institute for Semiconductor Physics SB RAS, 13, Lavrentiva av., Novosibirsk, 630090, Russia, Ph.: 383-3304475, e-mail: zhur@thermo.isp.nsc.ru', u'full_name': u'K. S. Zhuravlev'}, {u'author_order': 2, u'affiliation': u'Institute for Semiconductor Physics SB RAS, 13, Lavrentiva av., Novosibirsk, 630090, Russia, Ph.: 383-3304475', u'full_name': u'A. I. Toropov'}, {u'author_order': 3, u'affiliation': u'Institute for Semiconductor Physics SB RAS, 13, Lavrentiva av., Novosibirsk, 630090, Russia, Ph.: 383-3304475', u'full_name': u'V. G. Mansurov'}] 2006 16th International Crimean Microwave and Telecommunication Technology, 2006

Described is MBE technology, whose essence is the growth of heterostructures for UHF transistors including nitride technology. We demonstrate that buffer layer optimization allows improving GaAs FETs parameters. Procedures of AlGaAs/InGaAs/GaAs heterostructures growth for PHEMT, as well as the heterostructures themselves, have been also optimized. Presented in this paper is the data on MBE technology development, especially as regards GaN/AlGaN ...


Growth and properties III–V films and multilayered structures on fianite substrates and buffer layers

[{u'author_order': 1, u'affiliation': u'Institute for Physics of Microstructure, Russian Academy of Sciences, Nizhni Novgorod, Russia', u'full_name': u'Yu.N. Buzynin'}, {u'author_order': 2, u'affiliation': u'A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia', u'full_name': u'A.N. Buzynin'}, {u'author_order': 3, u'affiliation': u'A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia', u'full_name': u'V.V. Osiko'}, {u'author_order': 4, u'affiliation': u'Institute for Physics of Microstructure, Russian Academy of Sciences, Nizhni Novgorod, Russia', u'full_name': u'M.N. Drozdov'}, {u'author_order': 5, u'affiliation': u'A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow, Russia', u'full_name': u'E.E. Lomonova'}, {u'author_order': 6, u'affiliation': u'Institute for Physics of Microstructure, Russian Academy of Sciences, Nizhni Novgorod, Russia', u'full_name': u'O.I. Khrykin'}, {u'author_order': 7, u'affiliation': u'Physicotechnical Research Institute, Nizhni Novgorod State University, Russia', u'full_name': u'B.N. Zvonkov'}] 2010 3rd International Nanoelectronics Conference (INEC), 2010

The opportunity of the use Si and GaAs with single and double buffer layers and YSZ substrates for III-V(GaAs, InAs, GaSb, InGaAs, AlGaAs, GaN, AlN) epitaxy by a MOCVD method is investigated. The technology of single YSZ and double (YSZ on porous material) buffer layers preparation on Si and GaAs substrates is developed. By using porous substrate, we improved structure ...


Generation and detection of THz waves using InGaAs photoconductive antenna with 1.55 μm excitation

[{u'author_order': 1, u'affiliation': u'Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, 739-8530, Japan', u'full_name': u'M. Kamakura'}, {u'author_order': 2, u'affiliation': u'Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, 739-8530, Japan', u'full_name': u'A. Takasato'}, {u'author_order': 3, u'affiliation': u'Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, 739-8530, Japan', u'full_name': u'J. Kitagawa'}, {u'author_order': 4, u'affiliation': u'Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, 739-8530, Japan', u'full_name': u'Y. Kadoya'}] 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006

Photoconductive antennas made on low-temperature-grown InGaAs were tested as THz generators and detectors with 1550 nm excitation. The antennas work quite well as detectors, but optimizations are necessary to realize efficient emitters.


Spatially resolved, polarized photoluminescence from wurtzite InGaAs/GaAs nanoneedles

[{u'author_order': 1, u'affiliation': u'Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA', u'full_name': u'Roger Chen'}, {u'author_order': 2, u'affiliation': u'Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA', u'full_name': u'Linus C. Chuang'}, {u'author_order': 3, u'affiliation': u'Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA', u'full_name': u'Thai Tran'}, {u'author_order': 4, u'affiliation': u'Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA', u'full_name': u'Michael Moewe'}, {u'author_order': 5, u'affiliation': u'Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA', u'full_name': u'Connie Chang-Hasnain'}] CLEO/QELS: 2010 Laser Science to Photonic Applications, 2010

We spatially resolve photoluminescence from wurtzite InGaAs/GaAs core-shell nanoneedles and characterize their nonuniform quantum well emission. Polarization measurements reveal anisotropy behavior that is reminiscent of GaN and other wurtzite materials.


Crystal growth and properties of column-III nitrides for short wavelength light emitters

[{u'author_order': 1, u'affiliation': u'Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan', u'full_name': u'I. Akasaki'}, {u'author_order': 2, u'affiliation': u'Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan', u'full_name': u'H. Amano'}] Proceedings of LEOS '93, 1993

Summary form only. Aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN) and their alloys AlGaInN, the so called column-III nitrides are promising candidates as the material for fabrication of very short wavelength light emitters in the blue to near ultraviolet region, because they have direct transition type band structure with the bandgap energy ranging from 1.9 eV to 6.2 ...


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Educational Resources on Gallium

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IEEE-USA E-Books

  • Physical Layer Techniques for 5G Wireless Security

    Wireless communications and cellular networks are vulnerable to various security threats due to several reasons. Physical layer techniques and technologies, such as massive multiple‐input multiple‐output (MIMO), millimeter communications, cognitive radio, and full‐duplex wireless, can be easily integrated to implement comprehensive 5G wireless security solutions. This chapter discusses physical layer security techniques for 5G wireless communications. It introduces full‐duplex communications and transceiver architecture, and discusses prior art on full‐duplex physical layer security schemes reported for the bidirectional, base station, and relay topologies. The chapter considers the optimum beamforming designs for full duplex wireless security solutions for multiantenna bidirectional and relay communication systems. It emphasizes future challenges and open issues for the implementation of full duplex secure transmissions in 5G systems. Due to simultaneous transmissions, full‐duplex operation in cellular networks can introduce increased levels of co‐channel interference.

  • Active Electronically Scanned Array Technology

    An active electronically scanned array (AESA) amplifies and phase shifts the transmit and receive signals by placing the active components at the elements. The low-noise amplifier (LNA) establishes a low-noise figure while amplifying the receive signal. Power amplifiers (PAs) in the transmit channel compensate the losses in the feed network. This chapter introduces T/R modules and associated technology, performance terms, and characteristics. The non-linear effects of power amplifiers are discussed in terms of their impact on array performance. Since switches play an important role in many timed array designs, they are presented in some detail. The chapter also discusses about the presentation of phase shifters and attenuators. Monolithic microwave integrated circuit (MMIC) T/R modules technology sprang to life in 1960s. MMICs have passive components fabricated on a semiconductor wafer along with the active devices.

  • Gallium Nitride‐Based Lateral and Vertical Nanowire Devices

    This chapter focuses on the first fabrication and characterization of GaN‐based lateral and vertical nanowire (NW) field‐effect transistors (FETs) by using top‐down approach, where one combined conventional e‐beam lithography and dry etching techniques with strong anisotropic tetramethyl ammonium hydroxide (TMAH) wet etching. Wet etching usually provides high etching selectivity that often offers an advantage in simplifying the fabrication process compared to the dry plasma etching. To fabricate the AlGaN/GaN O‐shaped‐gate nanowire FET, the GaN epitaxial layers were first grown on c‐plane sapphire substrate by MOCVD. The epitaxial structure of Si‐doped GaN/undoped‐GaN/Si‐doped GaN stack was grown by MOCVD on sapphire substrate. The AlGaN‐/GaN‐based omega‐gate NW FETs have been fabricated using TMAH orientation‐selective lateral wet etching of atomic layer‐deposited (ALD)‐deposited HfO2sidewall spacer. The top‐down approach provides a viable pathway toward gate‐all‐around (GAA) devices for III‐nitride semiconductors, which are very promising candidates for steep‐switching power device applications.

  • Introduction

    This chapter contains sections titled:Authenticated Key AgreementThe Challenge in Authenticated Key AgreementHow to Read this Book?Reference

  • Service Configuration in the IMS

    This chapter contains sections titled:XDM architectureDownloading an XML Document, Attribute, or ElementDirectory RetrievalData Search with XDMSubscribing to Changes in XML Documents

  • Luttinger Liquid Behavior of Long GaAs Quantum Wires

    This chapter contains sections titled: * Introduction * Theory of Conductivity in 1D Wires * Fabrication of Quantum Wires in V-Grooves * Experimental Results and Analysis for Short V-Groove Quantum Wires * Resistance Dependence on_T_and Length of Longer V-Groove Quantum Wires * Conclusions ]]>

  • Generic Access Network Toward Fixed–Mobile Convergence

    This chapter contains sections titled:Trends in the IndustryStandardizationGan OverviewBenefits with the GAN TechnologyPractical ExperiencesImpact on Networks and ProcessesDiscussionEvolution of GANConclusions

  • Linearly Polarized Rhombic Grid Array Antenna

    A conventional grid array antenna (GAA) composes of wire radiation elements and wire feed elements, both backed by a conducting plate. This chapter presents a novel GAA from the perspective of realizing a beam‐scanning antenna. The radiation elements for this GAA are bent with angle 2α forming a structure with numerous rhombic cells. This GAA is referred to as a rhombic grid array antenna (R‐GAA). The chapter shows that the gain for the R‐GAA has less variation with frequency than the gain for the conventional GAA over the band of interest. It considers the analysis that is performed using the method of moments, where the ground plane (GP) is assumed to be of infinite extent. The chapter shows the frequency response of the gain in the beam direction. Across a frequency range, the gain for the R‐GAA with bent radiation elements has less variation than that for a conventional GAA with straight radiation elements.

  • Reconfigurable Infrared Photodetector Based on Asymmetrically Doped Double Quantum Wells for Multicolor and Remote Temperature Sensing

    Multicolor Infrared (IR) detectors provide new solutions in physical, chemical, and biological sensing and imaging. Multispectral sensing makes it possible to increase detection sensitivity, to improve object identification and discrimination capabilities, and to measure the absolute temperature of the object regardless of its emissivity and geometry. Numerous practical applications of such detectors include defense and commercial technologies, such as night vision, low visibility navigation, monitoring of industrial high‐temperature processes, noncontact temperature imaging, target detection and tracking, and remote earth observations. Nanostructures with double quantum wells (DQWs) are very promising for multicolor sensing. They demonstrate strong double‐peak photoresponse, where the peak positions and their magnitudes may be controlled by the bias voltage via the charge redistribution between DQWs. This chapter presents the effects of DQW asymmetric doping on the parameters of IR detector, its spectral selectivity, and bias tunability. High bias‐tunable spectral selectivity of asymmetrically doped DQWs makes nanomaterials very attractive for precise thermometric measurements.

  • Impact of Local High‐κ Insulator on Drivability and Standby Power of Gate‐All‐Around SOI MOSFET

    In this chapter we study the impact of a local high‐k gate insulator on the drivability and off‐current of a gate‐all‐around (GAA) silicon‐on‐insulator (SOI) metal oxide semiconductor field‐effect transistor (MOSFET). The replacement of part of the gate SiO2film with a thick high‐k insulator (for example, HfO2) results in the high drivability of the GAA MOSFET, which stems from the lateral extension of high gate‐induced potential. A simulation was performed to determine the optimal width of the high‐k insulator in order to realize the best performance. In addition, simulation results reveal that the parasitic resistance of the low‐doped source and drain diffusion region is markedly reduced by the lateral extension of gate‐induced potential because the cross section of the silicon wire is very small.



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