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2015 IEEE Energy Conversion Congress and Exposition
The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum
2014 IEEE Photonics Society Summer Topical Meeting Series
The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.
2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
Electron Devices and Solid-State Circuits
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Fobelets, K.; Genoe, J.; Vounckx, R.; Borghs, G. Solid State Device Research Conference, 1992. ESSDERC '92. 22nd European, 1992
In this paper we report on the experimental observation of four negative differential resistance regions in the current-voltage characteristic of a monolithically integrated seriesconnection of two resonant tunneling diodes at room temperature. An equivalent circuit of the seriesconnection is proposed which gives an explanation of the experimental results. The required current- voltage characteristics of the two resonant tunneling diodes in ...
Chenyang Xue; Jun Liu; Xiujian Chou; Yi Liu; Kangkang Niu Image and Signal Processing (CISP), 2010 3rd International Congress on, 2010
In this paper the reconstructed method of three-dimensional morphology validated by the method of transmission reflection interference for GaAs steps structure, which is deposited by transparent film. As drove by Pizeo, the surface of different height can reach the position of zero optical path different, and during the whole of scanning, the change of interference fringe can be recorded by ...
Alexandrov, D.; Gallagher, C. Electrical and Computer Engineering, 2004. Canadian Conference on, 2004
The conductivity of the n-channel of a field effect transistor designed on nitride semiconductors is investigated in this paper on the basis of the created model. The transistor contains two parts - vertical and horizontal structures. The vertical structure contains three layers n-In0.5Ga0.5N-p-In0.5Ga0.5N-GaN (nondoped). The conductivity of the top layer GaN (nondoped) is ruled by tunnel injection of electrons coming ...
Zhiqiang Zhang; Xiaoping Liao; Kaiyue Wang Microelectromechanical Systems, Journal of, 2015
This letter presents a directional inline millimeter-wave microelectromechanical systems (MEMS) power sensor with both thermoelectric and capacitive detection elements, in order to show the power transfer direction and improve the high-power detection range. In the design, a certain percentage of the incident power is extracted by a coplanar-waveguide directional coupler, and sensed in a MEMS fixed-fixed beam for the capacitive ...
Masuda-Jindo, K.; Kikuchi, R. Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th, 2002
Using the tight-binding molecular dynamics (TBMD) method, we study the atomistic properties of strain included dislocations, both 60° and 90° types, in medium and highly mismatched III-V semiconductor heterostructures, like InGaAs/GaAs, InP/GaAs and InP/Si systems. The atomic diffusion in the semiconductor interface is investigated via vacancy mechanism of diffusion using the path probability method (PPM). The critical layer thickness for ...
GaN Transistors -- Crushing Silicon in Wireless Energy Transfer
The Long Term Reliability of Gallium Nitride
Transphorm: Redefining Energy Efficiency
Transphorm: GaN Champions
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
GaN and SiC, Fact vs. Friction: APEC 2013 KeyTalk with Dr. Umesh Mishra
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