37,897 resources related to Gallium
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2015 IEEE Energy Conversion Congress and Exposition
The scope of ECCE 2015 includes all technical aspects of research, design, manufacture, application and marketing of devices, components, circuits and systems related to energy conversion, industrial power and power electronics.
2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)
The PVSC is a technical conference dedicated to the science and application of photovoltaics for solar electricity generation. Technical Program Areas: 1. Fundamentals and New Concepts for Future Technologies 2. Thin Film Polycrystalline Photovoltaics 3. III-V and Concentrator Technologies 4. Crystalline Silicon Technologies 5. Thin Film Silicon Based PV Technologies 6. Organic Photovoltaics 7. Space Technologies 8. Characterization and Measurement Methods 9. PV Modules and Manufacturing 10. PV Systems and Applications 11. PV Velocity Forum
2014 IEEE Photonics Society Summer Topical Meeting Series
The Topical Meetings of the Photonics Society are the premier conference series for exciting new areas in photonic science, technology, and applications, creating the opportunity to learn about emerging fields and to interact with the research and technology leaders in an intimate environment.
2013 8th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
2013 IEEE NEMS is the 8th annual International Conference on Nano/Micro Engineered and Molecular Systems which started in 2006. It covers Nano science and technology, Micro/nanofluidics and Bio chip, Micro/nano fabrication & metrology, Micro/Nano sensors, actuators and systemd, Flexible MEMS and printed electronics, Carbon Nanotube and Graphene based devices, etc.
2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)
Electron Devices and Solid-State Circuits
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.
All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.
Camin, D.V.; Fedyakin, N.; Pessina, G.; Previtali, E. Nuclear Science, IEEE Transactions on, 1995
Monolithic preamplifiers using large gate-area Gallium-Arsenide Metal- Semiconductor Field-Effect Transistors (GaAs MESFETs) at the input have been designed and fabricated using an ion-implanted GaAs process. Large gate-area is necessary to obtain low series noise. A differential voltage-sensitive preamplifier has at the input two MESFETs with a gate width W=6000 μm, it is fully DC coupled, has a large common-mode rejection ...
Lee, Jong-Lam; Mun, Jae Kyoung; Kim, Haecheon; Jai-Jin Lee; Park, Hyung-Moo Electron Devices, IEEE Transactions on, 1996
A high-efficient GaAs power metal semiconductor field effect transistor operating at a drain voltage of 2.3 V has been developed for low distortion power applications. The device has been fabricated on an epitaxial layer with a high-low doped structure grown by molecular beam epitaxy. The MESFET with a gate length of 0.8 μm and a total gate width of 21.16 ...
Silva, L.E.V.; Duque, J.J.; Tinó s, R.; Murta, L.O. Computing in Cardiology, 2010, 2010
Radial basis function Networks (RBFNs) have been successfully employed in different Machine Learning problems. The use of different radial basis functions in RBFN has been reported in the literature. Here, we discuss the use of the q-Gaussian function as a radial basis function employed in RBFNs. An interesting property of the q-Gaussian function is that it can continuously and smoothly ...
Dong Seup Lee; Laboutin, O.; Yu Cao; Johnson, W.; Beam, E.; Ketterson, A.; Schuette, M.; Saunier, P.; Palacios, T. Electron Device Letters, IEEE, 2012
This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 nm. As the Al2O3 passivation thickness increases, the current collapse in 80-μs pulsed-_I_ -_V_ measurements decreases from 30% to 13%, while dc characteristics are almost unchanged with the exception of increasing drain-induced barrier lowering. The ...
Geissberger, A.; Sadler, R.; Griffin, E.; Bahl, I.; Singh, H.; Drinkwine, M. Microwave Symposium Digest, 1987 IEEE MTT-S International, 1987
We present a process for monolithically fabricating microwave and DCFL digital GaAs circuits. The process employs refractory metal SAG FETs with techniques to provide low gate resistance and high output resistance and break-down voltage. Using a 1.0 µm gate length, 1.5 dB noise figure with 10.2 dB associated gain at 10 GHz analog performance and 65 ps typical propagation delay ...
Má irtí n O'Droma RF Power Amplifier Linearization, 2006
This course reviews key RF transmitter power amplifier linearization issues. The underlying power amplifier nonlinearity problem, that of the competing requirements of power amplifier efficiency and linear signal transmission paths for bandwidth efficient, modulation-complex signals, is presented, together with the linearization solution. Modern linearization schemes and where linearization research, and technology, is headed is addressed.
Cripps, Steve C. Basics of RF PA Design, 2007
RF power amplifiers have received a great deal of attention and development effort over the last decade, mainly due to the challenging requirements of the wireless communications industry. This effort has not only led to some impressive progress in PA performance, it has also led to some revisions and rethinking in traditional PA theory. this course will highlight how these ...
The Long Term Reliability of Gallium Nitride
Is silicon dead? APEC 2013 Rap Session
Transphorm: Redefining Energy Efficiency
Transphorm: GaN Champions
IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
GaN and SiC, Fact vs. Friction: APEC 2013 KeyTalk with Dr. Umesh Mishra
No standards are currently tagged "Gallium"
- Electrical Back End Process Engineer 3 or 4
- Principal Back End Process Electrical Engineer
- Principal Tech Support Engr - Die Visual Engineering Support
- Backside Deposition Etch Engineer II or III (3rd Shift)
- RF Test Engineer
Eridan Communications, Inc.