Flash memory

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Flash memory is a non-volatile computer storage chip that can be electrically erased and reprogrammed. (Wikipedia.org)






Conferences related to Flash memory

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2018 International Symposium on Information Theory and Its Applications (ISITA)

The scope of the symposium includes all aspects of information theory and its applications. It covers a wide range of topics such as Shannon Theory, Coding Theory, and Information Security as well as novel applications of information theory.

  • 2016 International Symposium on Information Theory and Its Applications (ISITA)

    The scope of the symposium includes all aspects of information theory and its applications. It covers a wide range of topics such as Shannon Theory, Coding Theory, and Information Security as well as novel applications of information theory.

  • 2014 International Symposium on Information Theory and its Applications (ISITA)

    The ISITA symposium features world-class speakers, plenary talks and technical sessions on a diverse range of topics within the field of information theory Interested authors are invited to submit papers describing novel and previously unpublished results on topics in information theory and its applications, including, but not limited to: Error Control Coding, Coded Modulation, Communication Systems, Detection and EstimationSpread Spectrum Systems, Signal Processing, Rate-Distortion Theory, Stochastic Processes, Network Coding, Shannon Theory, Coding Theory and Practice, Data Compression and Source Coding, Data Storage, Mobile Communications, Pattern Recognition and Learning, Speech/Image Coding, Multi-Terminal Information Theory, Cryptography and Data Security, Applications of Information Theory, and Quantum Information Theory.

  • 2012 International Symposium on Information Theory and its Applications (ISITA)

    The scope of this symposium includes all aspects of information theory and its applications. It covers a wide range of topics such as Shannon Theory, Coding Theory, and Cryptology as well as novel applications of Information Theory.

  • 2010 International Symposium On Information Theory & Its Applications (Isita2010)

    The topics of interest include Error Control Coding, Coding Theory and Practice, Coded Modulation, Data Compression and Source Coding, Pattern Recognition and Learning, Speech/Image Coding, Rate-Distortion Theory, Shannon Theory, Stochastic Processes, Cryptology and Data Security, Data Networks, Multi-User Information Theory, Quantum Information Processing

  • 2008 International Symposium on Information Theory and its Applications (ISITA)

    The scope is Information theory and its Applications, e.g., error control coding, Coded Modulation, Cummunication systems, Detection and estimation, Spread spectrum systems, Signal processing, Rate-distortion theory, Stochastic processes, Data networks, Multi-user information theory, Coding theory and Practice, Data compression and Source coding, Optical communications, Mobile communications, Pattern recognition and learning, Speech/Image Coding, Shannon Theory, Cryptograph and Data Securi


2017 12th International Conference on Computer Engineering and Systems (ICCES)

Computer Engineering and Systems


2017 13th IEEE International Conference on Electronic Measurement & Instruments (ICEMI)

The international conference on electronic measurement & instruments (ICEMI) is sponsored by IEEE Beijing Section and China Instrument and Control Society and held every two years. ICEMI dedicated to the electronic test of devices, modules and systems which is covering the complete cycle from design verification, test, diagnosis, failure analysis and back to process and design improvement. The purpose of the ICEMI is to provide excellent opportunities for scientists, engineers, and participants throughout the world to present the latest research results and to exchange their views or experience.

  • 2015 12th IEEE International Conference on Electronic Measurement & Instruments (ICEMI)

    Conference Scope:The International Conference on Electronic Measurement & Instruments(ICEMI)is sponsored by IEEE and Chinese Institute of Electronics and held every two years. As the world’s premier conference, ICEMI dedicated to the electronic test of devices, modules and systems which is covering the complete cycle from design verification, test, diagnosis, failure analysis and back to process and design improvement. The purpose of the ICEMI is to provide excellent opportunities for scientists, engineers, and participants throughout the world to present the latest research results and to exchange their views or experience.

  • 2013 IEEE 11th International Conference on Electronic Measurement & Instruments (ICEMI)

    ICEMI is invited authors to submit original papers in any but not limited as following areas: Science Foundation of Instrument and Measurement Innovative Designing of Instrument and Test System Applications on Instrument and Testing Signal & Image Processing Sensor and Non-electric Measurement Communication and Network Test Systems Control Theory and Application Condition Monitoring, Fault Diagnosis and Prediction Other Relevant Theories and Technologies

  • 2011 IEEE 10th International Conference on Electronic Measurement & Instruments (ICEMI)

    ICEMI is the world s premier conference dedicated to the electronic test of devices, boards and systems covering the complete cycle from design verification, test, diagnosis, failure analysis and back to process and design improvement, and is convened every two years. The purpose of the ICEMI is to provide excellent opportunities for scientists, engineers, and participants throughout the world to present the latest research results and to exchange their views or experience.

  • 2009 9th International Conference on Electronic Measurement & Instruments (ICEMI 2009)

    Science Foundation of Instrument and Measurement Instrument, Measurement and Test Technology: Sensing Technology and Transducer Designing of Instrument and Test System Applications on Instrument and Testing: Communication and Network Test Systems Control Theory and Application

  • 2007 8th International Conference on Electronic Measurement & Instruments (ICEMI 2007)


2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

The RADECS international conference is held once a year in Europe, covering the latest progress in the field of radiation effects on electronics, optoelectronics devices and systems and their behaviou and reliability under ionizing high energy radiation. This conference aims at bringing together scientists and industry from space, aviation, ground applications and accelerators and at the same time industrial exhibitors, together initiating contracts, collaborations and paving the way to tomorrow’s requirements. This year’s conference is organized by CERN (European Laboratory for Nuclear Research). The first day of the conference will be covered by a short course entitled “From Space, To Ground and Below”, to introduce how to deal with radiation effects within different environments such as Space, Avionic, Ground Level and Particle accelerators. The technical program will then feature oral and poster technical sessions, a data workshop and an industrial exhibition.


2017 17th Non-Volatile Memory Technology Symposium (NVMTS)

The NVMTS is an eminent forum for exchanging information on state-of-the-art technological advances on non-volatile memory among researchers and engineers from both academia and industry. NVMTS 2017 focuses on both emerging and existing non-volatile memory technologies instead of a singular technology, so as to encourage cross-pollination of ideas. We aim to create an interactive environment for discussing various significant aspects of advanced memory technologies.


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Periodicals related to Flash memory

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Circuits and Systems II: Express Briefs, IEEE Transactions on

Part I will now contain regular papers focusing on all matters related to fundamental theory, applications, analog and digital signal processing. Part II will report on the latest significant results across all of these topic areas.


Communications Letters, IEEE

Covers topics in the scope of IEEE Transactions on Communications but in the form of very brief publication (maximum of 6column lengths, including all diagrams and tables.)


Computer

Computer, the flagship publication of the IEEE Computer Society, publishes peer-reviewed technical content that covers all aspects of computer science, computer engineering, technology, and applications. Computer is a resource that practitioners, researchers, and managers can rely on to provide timely information about current research developments, trends, best practices, and changes in the profession.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Computers, IEEE Transactions on

Design and analysis of algorithms, computer systems, and digital networks; methods for specifying, measuring, and modeling the performance of computers and computer systems; design of computer components, such as arithmetic units, data storage devices, and interface devices; design of reliable and testable digital devices and systems; computer networks and distributed computer systems; new computer organizations and architectures; applications of VLSI ...


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Xplore Articles related to Flash memory

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CMOS and Interconnect Reliability - Non-Volatile Memory Reliability

2006 International Electron Devices Meeting, 2006

First Page of the Article ![](/xploreAssets/images/absImages/04154236.png)


A selective verify scheme for achieving a 5-MB/s program rate in 3-bit/cell flash memories

H. Kurata; N. Kobayashi; K. Kimura; S. Saeki; T. Kawahara 2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103), 2000

The demand for high density and high-speed programming in flash memories has grown because of audio- and video- storage applications. A multilevel technique is the most effective approach to improving memory density, but it requires precise control of a memory cell's Vth that doesn't degrade programming performance. To enable this, we have developed a selective verify scheme for high-speed programming ...


Status and challenges of PCM modeling

A. L. Lacaita; D. Ielmini ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007

From the stage of concept-level alternative to Flash memories, the phase- change memory (PCM) is rapidly gaining the status of reference technology for high performance, high endurance next generation non volatile applications. To sustain the development of new and scaled PCM technologies, a comprehensive understanding and modelling of the cell at the material, cell and large-array levels are required. This ...


A 0.13- µm CMOS NOR flash memory experimental chip for 4-b/cell digital storage

R. Micheloni; O. Khouri; S. Gregori; A. Cabrini; G. Campardo; L. Fratin; G. Torelli Proceedings of the 28th European Solid-State Circuits Conference, 2002

This paper presents architectural and circuit solutions developed to achieve 4-b/cell storage in NOR-type Flash memories. A multiple closed-loop voltage sensing topology, combined with hierarchical load-decoupling row selection, and a two-step analog-to-digital conversion with early most significant bit (MSB) detection, achieve 120-ns access time for the stored MSBs. 80-mV programming step is provided by a switched-capacitor staircase waveform generator. Experimental ...


Will hard drives finally stop shrinking?

L. D. Paulson Computer, 2005

There have been explosive growth in the sales of small digital consumer electronic devices such as still and video cameras, TiVo personal video recorders (PVRs), and MP3 players like Apple Computer's iPod. As these devices have gained capabilities, they have needed larger storage capacities in smaller packages, often in the form of hard drives. For handheld and consumer electronic devices, ...


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Educational Resources on Flash memory

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eLearning

CMOS and Interconnect Reliability - Non-Volatile Memory Reliability

2006 International Electron Devices Meeting, 2006

First Page of the Article ![](/xploreAssets/images/absImages/04154236.png)


A selective verify scheme for achieving a 5-MB/s program rate in 3-bit/cell flash memories

H. Kurata; N. Kobayashi; K. Kimura; S. Saeki; T. Kawahara 2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103), 2000

The demand for high density and high-speed programming in flash memories has grown because of audio- and video- storage applications. A multilevel technique is the most effective approach to improving memory density, but it requires precise control of a memory cell's Vth that doesn't degrade programming performance. To enable this, we have developed a selective verify scheme for high-speed programming ...


Status and challenges of PCM modeling

A. L. Lacaita; D. Ielmini ESSDERC 2007 - 37th European Solid State Device Research Conference, 2007

From the stage of concept-level alternative to Flash memories, the phase- change memory (PCM) is rapidly gaining the status of reference technology for high performance, high endurance next generation non volatile applications. To sustain the development of new and scaled PCM technologies, a comprehensive understanding and modelling of the cell at the material, cell and large-array levels are required. This ...


A 0.13- µm CMOS NOR flash memory experimental chip for 4-b/cell digital storage

R. Micheloni; O. Khouri; S. Gregori; A. Cabrini; G. Campardo; L. Fratin; G. Torelli Proceedings of the 28th European Solid-State Circuits Conference, 2002

This paper presents architectural and circuit solutions developed to achieve 4-b/cell storage in NOR-type Flash memories. A multiple closed-loop voltage sensing topology, combined with hierarchical load-decoupling row selection, and a two-step analog-to-digital conversion with early most significant bit (MSB) detection, achieve 120-ns access time for the stored MSBs. 80-mV programming step is provided by a switched-capacitor staircase waveform generator. Experimental ...


Will hard drives finally stop shrinking?

L. D. Paulson Computer, 2005

There have been explosive growth in the sales of small digital consumer electronic devices such as still and video cameras, TiVo personal video recorders (PVRs), and MP3 players like Apple Computer's iPod. As these devices have gained capabilities, they have needed larger storage capacities in smaller packages, often in the form of hard drives. For handheld and consumer electronic devices, ...


More eLearning Resources

IEEE-USA E-Books

  • Advanced Nonvolatile Memory Designs and Technologies

    This chapter contains sections titled: Nonvolatile Memory Advances Floating Gate Cell Theory and Operations Nonvolatile Memory Cell and Array Designs Flash Memory Architectures Multilevel Nonvolatile Memories Flash Memory Reliability Issues Ferroelectric Memories This chapter contains sections titled: References

  • About the Editors

    No abstract.

  • Reliability Of Nand Flash Memory

    Reliability of NAND flash memory is more interesting than that of other semiconductor devices. Program and erase of NAND flash perform by electron injection and emission to/from floating gate (FG). There are several methods of electron injection and emission. For electron injection, there are two methods, namely channel hot electron (CHE) injection and Fowler-Nordheim tunneling (FN-t) injection. Data retention is degraded by electron and hole traps in tunnel oxide. Detrapping of trapped charges in tunnel oxide is a major root cause of Vt shift during the data retention test. Read disturb failure is mainly caused in the erase state after program/erase cycling stress. The stress-induced leakage current (SILC), which is generated by program/erase cycling stress, is major root cause for the read-disturb phenomena. The mechanism of erratic over program is considered to be an excess electron injection at hole trap sites in tunnel oxide.

  • ARM?? Microcontroller Architectures

    This chapter talks about the architectures and organizations of most popular embedded systems, including the most updated microcontroller ARM?? Cortex??-M4, TivaTMTM4C123GH6PM MCU, Tiva for C Series LaunchPadTMTM4C123GXL evaluation board, and EduBASE ARM??. It first discusses the architecture of the ARM?? Cortex??-M4 microcontroller unit (MCU). This includes the architecture of the Cortex??-M4 MCU and the architecture of the ARM?? Cortex??-M4 core processor (CPU). Then the external memory architecture is discussed with the interfaces between the Cortex??-M4 MCU and memory (flash memory and static RAM (SRAM)) because the Cortex??-M4 is a special MCU and it does not contain any internal memory. Next, the nested vectored interrupt controller (NVIC) architecture is introduced since this unit is integrated into the MCU chip. The chapter also discusses the debug architecture, which plays a key role in the development of the user programs. Finally, it describes the programmer's model, including the operation modes and states.

  • Prospects and Challenges of NextGeneration Flash Memory Devices

    This chapter contains sections titled: Introduction Scaling challenges Technological innovations Conclusions

  • Conclusions

    The development of NAND flash memory started in 1987 in the R&D center of Toshiba Corporation. The target market was the replacement of magnetic memory, such as HDD, and so on. The first NAND flash memory cells of 1-m rule was8*F2 cell size by using a wide x-direction pitch of 4 m (4*F) because LOCOS isolation width was 3 m wide due to the limitation of the high-voltage operation. The reasons why the NAND flash memory was accepted to the emerging applications were a low bit cost, high reliability, high performance, and low power consumption. The power consumption of storage memory has been greatly reduced by using NAND flash memory, compared with magnetic memory of HDD. In the data center, SSD based on NAND flash memory can reduce the power consumption of an enterprise server, and replace HDD, because of low power operation in NAND flash memory and low cooling power.

  • Three-Dimensional Nand Flash Cell

    This chapter introduces major three-dimensional (3D) cells. The bit cost scalable (BiCS) cell has a new structure of the stacked control gate layers and vertical poly-silicon channel. The thinner poly-silicon channel can obtain the easier electrostatic control performed by the gate electrode over the thinner body and the smaller poly-silicon grains which reduce the impact on the channel current of statistical variation of smaller grain size configuration. Terabit cell array transistor (TCAT) has a similar structure of BiCS, with a vertical poly-silicon channel, stacked word lines, and a silicon nitride (SiN) charge storage layer of the surrounding gate SONOS cell. The chapter describes a process sequence of vertical gate NAND (VG-NAND) cell and proposes a dual control gate with a surrounding floating-gate (DC-SF) cell for 3D NAND flash memory. This structure allows to apply floating gate to a 3D stacked cell structure with minimal cell size and high coupling ratio.

  • Embedded Flash Memory

    This chapter contains sections titled: Introduction Embedded Flash Versus Stand-Alone Flash Memory Embedded Flash Memory Applications Embedded Flash Memory Cells Embedded Flash Memory Design References

  • No title

    This textbook provides practicing scientists and engineers a primer on the Atmel AVR microcontroller. In this second edition we highlight the popular ATmega164 microcontroller and other pin-for-pin controllers in the family with a complement of flash memory up to 128 kbytes. The second edition also adds a chapter on embedded system design fundamentals and provides extended examples on two different autonomous robots. Our approach is to provide the fundamental skills to quickly get up and operating with this internationally popular microcontroller. We cover the main subsystems aboard the ATmega164, providing a short theory section followed by a description of the related microcontroller subsystem with accompanying hardware and software to exercise the subsystem. In all examples, we use the C programming language. We include a detailed chapter describing how to interface the microcontroller to a wide variety of input and output devices and conclude with several system level examples. Ta le of Contents: Atmel AVR Architecture Overview / Serial Communication Subsystem / Analog-to-Digital Conversion / Interrupt Subsystem / Timing Subsystem / Atmel AVR Operating Parameters and Interfacing / Embedded Systems Design

  • Flash Memory Reliability

    This chapter contains sections titled: Introduction Cycling-Induced Degradations in Flash Memories Flash Memory Data Retention Flash Memory Disturbs Stress-Induced Tunnel Oxide Leakage Current Special Reliability Issues for Poly-to-Poly Erase and Source-Side Injection Program Process Impacts on Flash Memory Reliability High-Voltage Periphery Transistor Reliability Design and System Impacts on Flash Memory Reliability Flash Memory Reliability Screening and Qualification For Further Study References



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