Conferences related to Films

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

Photovoltaic materials, devices, systems and related science and technology

2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

APEC focuses on the practical and applied aspects of the power electronics business. The conference addresses issues of immediate and long term importance to practicing power electronics engineer.

2019 IEEE International Electron Devices Meeting (IEDM)

the IEEE/IEDM has been the world's main forum for reporting breakthroughs in technology, design, manufacturing, physics and the modeling of semiconductors and other electronic devices. Topics range from deep submicron CMOS transistors and memories to novel displays and imagers, from compound semiconductor materials to nanotechnology devices and architectures, from micromachined devices to smart -power technologies, etc.

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Periodicals related to Films

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission

Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.

Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.

Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...

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Xplore Articles related to Films

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Application of HTSC-thin films in microwave integrated delay lines

[{u'author_order': 1, u'affiliation': u'JHA Consulting Services, Cerritos, CA, USA', u'authorUrl': u'', u'full_name': u'A.R. Jha', u'id': 38224698300}] 1991 IEEE Aerospace Applications Conference Digest, 1991

The author describes the capabilities of high-temperature superconducting thin films (HTSTF) for possible application in microwave integrated delay lines. HTSTF can be characterized as thin-film microstrip (TFMS) lines operating at superconducting temperatures. Low insertion loss, minimum signal delay, and small power dissipation are possible with HTSTF delay lines. The conductor loss, dielectric loss, signal distortion, signal delay, and instantaneous bandwidth ...

Piezoelectric evaluation of UV-illuminated PZT films by piezorsponse force microscopy

[{u'author_order': 1, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'authorUrl': u'', u'full_name': u'Cin-Guan Hong', u'id': 37396953000}, {u'author_order': 2, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'authorUrl': u'', u'full_name': u'Ching-Pin Hsu', u'id': 37402566600}, {u'author_order': 3, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'authorUrl': u'', u'full_name': u'Cheng-Fu Yang', u'id': 37404775100}, {u'author_order': 4, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'authorUrl': u'', u'full_name': u'Ching-Chich Leu', u'id': 37305800100}] 2010 3rd International Nanoelectronics Conference (INEC), 2010

The Pb(Zr<sub>0.6</sub>,Ti<sub>0.4</sub>)O<sub>3</sub> (PZT) films were prepared using a sol-gel process on top of Pt (150nm)/TiO<sub>2</sub>(20nm)/SiO<sub>2</sub>/Si. Deposited solution layers were exposed to ultraviolet light illumination during the baking process. Then, we used the piezoresponse force microscopy (PFM) to perform the nanoscale observation of ferroelectric domain structure in PZT films.

Monolithic Thin Film Semiconductor Acoustoelectric Convolver

[{u'author_order': 1, u'authorUrl': u'', u'full_name': u'Z.S. Wu', u'id': 37557784500}, {u'author_order': 2, u'authorUrl': u'', u'full_name': u'S. Onishi', u'id': 37560948300}, {u'author_order': 3, u'authorUrl': u'', u'full_name': u'K.S. Chen', u'id': 37557502100}, {u'author_order': 4, u'authorUrl': u'', u'full_name': u'W.-C. Wang', u'id': 37423082100}] 1981 Ultrasonics Symposium, 1981


Kerr Rotation Enhancement with Amorphous Si Layer

[{u'author_order': 1, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'authorUrl': u'', u'full_name': u'T. Asaka', u'id': 37339465600}, {u'author_order': 2, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'authorUrl': u'', u'full_name': u'S. Asari', u'id': 37332293500}, {u'author_order': 3, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'authorUrl': u'', u'full_name': u'Y. Ota', u'id': 37338195700}, {u'author_order': 4, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'authorUrl': u'', u'full_name': u'K. Nakamura', u'id': 37333792100}, {u'author_order': 5, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'authorUrl': u'', u'full_name': u'A. Itoh', u'id': 37325171100}] IEEE Translation Journal on Magnetics in Japan, 1985


On the optimization of silicon film thickness in thin-film SOI devices

[{u'author_order': 1, u'affiliation': u'IMEC, Leuven, Belgium', u'full_name': u'J.-P. Colinge'}, {u'author_order': 2, u'affiliation': u'IMEC, Leuven, Belgium', u'authorUrl': u'', u'full_name': u'M. Tack', u'id': 38181674100}] IEEE SOS/SOI Technology Conference, 1989

Summary form only given. It is shown that in order to obtain fully depleted SOI MOSFETs with suitable values of threshold voltage (around 0.6 V for the n-channel device), a silicon film thickness smaller than 100 nm must be used. 70 nm should be sufficiently thin. This observation is quite independent of the magnitude of (fixed) oxide charge densities, although ...

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Educational Resources on Films

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  • The Matter of Plagiarism: What, Why, and If

    This chapter contains sections titled:The Concept of PlagiarismLack of Authorization—;Economic FoundationsLack of Authorization—Natural or Moral RightsLack of Accreditation—Noninfringing PlagiarismA Personal View of the MatterLiterature Review

  • Group IV Alloys for Advanced Nano‐ and Optoelectronic Applications

    Mainstream semiconductor technology builds on elements of group IV within the periodic table. Crystalline silicon remains the principal base material, whereas germanium and carbon have entered the mainstream in the embedded source/drain technology, as well as in heterojunction bipolar transistors (HBTs) used in BiCMOS technology. Recently, it has been shown that alloying Ge with Sn enables the fabrication of fundamental direct bandgap group IV semiconductors, as well as optically pumped GeSn lasers grown on Si. This achievement pave the route toward efficient and monolithically integrated group IV light emitters, that is, lasers, for electronic‐photonic integrated circuits (EPICs) that could solve the emerging power consumption crisis in complementary metal‐oxide semiconductor (CMOS) technology by enabling optical on‐chip and chip‐to‐chip data transfer. The large parasitic capacitances introduced by various layers of copper (Cu) interconnects demand high transistor IONcurrents, which could be reduced if some of the Cu lines are replaced by optical interconnects.

  • Scribing Graphene Circuits

    This chapter presents a panoramic view of the potential and physical characteristics of graphene oxide (GO) and rGO, from fabrication to physical and electrical properties. The versatility of this material is emphasized by the laser reduction method, which allows the patterning of conductive rGO surrounded by insulating GO. The chemical synthesis of GO from graphite has evolved into a viable technique of producing graphene sheets on a large scale. The exfoliation process consists of breaking the interlayer bonds existing in between the layers of GO, whether by sonication or mechanical stirring, or by chemical compounds with surfactant properties. Raman spectroscopy uses a monochromatic laser to interact with the molecular vibrational modes in a sample. The laser‐assisted selective photo‐thermal reduction of GO into rGO makes it possible to generate accurate conductive patterns isolated by the GO on virtually any stable insulating substrate.

  • On the Field‐Induced Insulator–Metal Transition in VO2 Films

    First‐order metal‐insulator transitions (MITs) in crystalline materials correspond to a transformation between states with a dielectric and metallic types of conductivity. These transitions occur under the influence of external parameters, such as temperature and pressure, as well as with varying material composition. Materials exhibiting these phenomena include many transition metal oxides. First‐order metal insulator phase transitions in thin vanadium dioxide (VO2) films can be controlled by an applied electric field. This chapter discusses the conditions under which the transition can be induced in the entire film, rather than its top sliver. It shows that the favorable situation can be realized when the film is sufficiently thin, so that the energy cost of converting the entire film into the metallic phase is smaller than the would‐be cost of creating a domain boundary between the two phases. The chapter argues that in thin enough films, the entire‐film transition can be stabilized by the domain boundary energy.

  • Presenting the Successful Technical Seminar

    The knowledge explosion and the desire of most business people to enhance their careers has led to a boom in continuing education classes, usually in seminar form. Conducting a successful technical seminar requires careful preparation. Pre-seminar planning includes outlining the material, developing much more material than what is needed, and arranging comfortable and appropriate facilities. At the beginning of the seminar a topical outline should be provided, and plans to take a break between topics can be announced. After the presentation, time should be allowed for a session, not only for questions and answers, but also for an evaluation to help the speaker for the preparation of future seminars.

  • Living Rooms

    This chapter contains sections titled: A Equals B, The Mechanized Home

  • Challenges to Ultralow‐Power Semiconductor Device Operation

    This chapter focuses on the main trends, challenges, limits, and possible solutions for ultra low‐power nanoscale devices in the complementary metal‐oxide‐semiconductor (CMOS) and beyond‐CMOS arena, including novel materials, ultrathin films, and multigates. In the field of MOSFETs, several very interesting advances have been recently reported. Ultrathin semiconductor films and 3D‐field‐effect transistors (FETs) can improve sub‐20 nm CMOS node performance and substantially reduce supply voltage and short channel effects. One are facing dramatic challenges dealing with future nanoscale devices, including performance, power consumption, new materials, device integration, interconnects, ultimate technological processes, and novel functionalities, needing disruptive approaches and inducing fundamental trade‐offs for future ICs and nanosystems. This chapter reviewed recent advances and promising solutions for future ultralow power devices combining novel materials and innovative device architectures, including 2D layers, transition‐metal dichalcogenides (TMDs), heterostructures and quantum wells using strained Si, Ge, and III‐V thin films, as well as multigate, nanowire, CNT transistors, and tunnel FETs.

  • Structure and Electron Transport in Irradiated Monolayer Graphene

    Disordered graphene has attracted the attention of many researchers. Mainly, this is due to the possibility of obtaining a high‐resistance state of graphene films, which is of interest for application in electronics. This chapter discusses ion bombardment as a way of gradually inducing disorder in monolayer graphene. In variable‐range‐hopping (VRH), only localized states within an optimal energy band near the Fermi level are involved in the hopping process. This strong anisotropy indicates unambiguously different mechanisms of magnetoresistance (MR): negative MR in perpendicular fields is connected with orbital effects, while positive MR in parallel fields is determined by the spin polarization. As a result of averaging over different configurations, the contribution of the scattering sites to the total hopping probability vanishes due to destructive interference. The perpendicular magnetic field suppresses the interference, which leads to an increase of the hopping probability and, therefore, to the negative MR.

  • Gripped by Suspense

    This chapter contains sections titled: Sequencing Tactics, Knowing What to Expect, Delayed Gratification, Summary, Coda: What's Wrong with the Future?

  • Major Driving Forces and Growth Mechanisms for Tin Whiskers

    This chapter focuses on describing the primary driving forces and mechanisms causing the growth of whiskers and hillocks. It devotes to describing how the growth of intermetallic phase (IMC) leads to stress in the Sn layer. It also discusses the impact of Sn whiskers on reliability and the importance of suppressing their formation. The chapter discusses results from simultaneously measuring the growth of the IMC between the Cu and Sn whiskers, the stress in the Sn layer, and the whisker density to understand how these different processes interact. It describes experimental studies that are designed to identify the other processes that play a role in whiskers forming, for example, plasticity, diffusion‐mediated creep, and prevention of surface diffusion by the Sn oxide. The chapter also describes results from real‐time studies of whisker growth in the scanning electron microscope/focused ion beam milling (SEM/FIB) that show how whiskers and hillocks evolve in time.

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