Conferences related to Films

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2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 14th IEEE/ASME International Conference on Mechatronic and Embedded Systems and Applications (MESA)

The goal of the 14th ASME/IEEE MESA2018 is to bring together experts from the fields of mechatronic and embedded systems, disseminate the recent advances in the area, discuss future research directions, and exchange application experience. The main achievement of MESA2018 is to bring out and highlight the latest research results and developments in the IoT (Internet of Things) era in the field of mechatronics and embedded systems.


2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


2018 Design, Automation & Test in Europe Conference & Exhibition (DATE)

The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback fromrealworld design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops technical programme such as panels, hot-topic sessions, tutorials and workshops.

  • 2017 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback fromrealworld design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops technical programme such as panels, hot-topic sessions, tutorials and workshops.

  • 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic andembedded system engineering. It covers the design process, test, and automation tools forelectronics ranging from integrated circuits to distributed embedded systems. This includes bothhardware and embedded software design issues. The conference scope also includes theelaboration of design requirements and new architectures for challenging application fields suchas telecoms, wireless communications, multimedia, healthcare, smart energy and automotivesystems. Companies also present innovative industrial designs to foster the feedback from realworlddesign to research. DATE also hosts a number of special sessions, events within the maintechnical programme such as panels, hot-topic sessions, tutorials and workshops technical programme such as panels, hot-topic sessions, tutorials and workshops

  • 2015 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback from realworld design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops.

  • 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE)

    The DATE conference addresses all aspects of research into technologies for electronic and embedded system engineering. It covers the design process, test, and automation tools for electronics ranging from integrated circuits to distributed embedded systems. This includes both hardware and embedded software design issues. The conference scope also includes the elaboration of design requirements and new architectures for challenging application fields such as telecoms, wireless communications, multimedia, healthcare, smart energy and automotive systems. Companies also present innovative industrial designs to foster the feedback from real-world design to research. DATE also hosts a number of special sessions, events within the main technical programme such as panels, hot-topic sessions, tutorials and workshops

  • 2013 Design, Automation & Test in Europe Conference & Exhibition (DATE 2013)

    DATE is the complete event for the European electronic and test community. A leading world conference and exhibition, DATE unites 2,000 professionals with approximately 60 exhibiting companies, cutting edge R&D, industrial designers and technical managers from around the world.

  • 2012 Design, Automation & Test in Europe Conference & Exhibition (DATE 2012)

    DATE is the complete event for the European electronic system and test community. A leading world conference and exhibition, DATE unites 2,000 professionals with some 60 exhibiting companies, cutting edge R&D, industrial designers and technical managers from around the world.

  • 2011 Design, Automation & Test in Europe Conference & Exhibition (DATE 2011)

    DATE is the complete event for the European electronic system and test community. A world leading conference and exhibition, DATE unites 2,000 professionals with some 60 exhibiting companies, cutting edge R&D, industrial designers and technical managers from around the world.

  • 2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010)

    All aspects of research into technologies for electronic and (embedded) systems engineering. It covers the design process, test, and tools for design automation of electronic products ranging from integrated circuits to distributed large-scale systems.

  • 2009 Design, Automation & Test in Europe Conference & Exhibition (DATE 2009)

    The Design, Automation, and Test in Europe (DATE) conference is the world's premier conference dedicated to electronics system design & test. The technical programme features: Four distinctive and integrated themes, covering all aspects of systems design and engineering. Two special days are focusing on SoC Development Strategies and Multicore Applications.

  • 2008 Design, Automation & Test in Europe Conference & Exhibition (DATE 2008)

    The 11th DATE conference and exhibition is the main European event bringing together designers and design automation users, researchers and vendors, as well as specialists in the hardware and software design, test and manufacturing of electronic circuits and systems. It puts strong emphasis on ICs/SoCs, reconfigurable hardware and embedded systems, including embedded software. The five-day event consists of a conference with plenary invited papers, regular papers, panels, hot-topic sessions, tutorials.

  • 2007 Design, Automation & Test in Europe Conference & Exhibition (DATE 2007)

    DATE is the main European event bringing together designers and design automation users, researchers and vendors, as well as specialists in the hardware and software design, test and manufacturing of electronic circuits and systems. It puts strong emphasis on both ICs/SoCs, reconfigurable hardware and embedded systems, including embedded software.

  • 2006 Design, Automation & Test in Europe Conference & Exhibition (DATE 2006)

  • 2005 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2004 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2003 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2002 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2001 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 2000 Design, Automation & Test in Europe Conference & Exhibition (DATE)

  • 1999 Design, Automation & Test in Europe Conference & Exhibition (DATE)


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Periodicals related to Films

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


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Xplore Articles related to Films

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Application of HTSC-thin films in microwave integrated delay lines

[{u'author_order': 1, u'affiliation': u'JHA Consulting Services, Cerritos, CA, USA', u'full_name': u'A.R. Jha'}] 1991 IEEE Aerospace Applications Conference Digest, 1991

The author describes the capabilities of high-temperature superconducting thin films (HTSTF) for possible application in microwave integrated delay lines. HTSTF can be characterized as thin-film microstrip (TFMS) lines operating at superconducting temperatures. Low insertion loss, minimum signal delay, and small power dissipation are possible with HTSTF delay lines. The conductor loss, dielectric loss, signal distortion, signal delay, and instantaneous bandwidth ...


Piezoelectric evaluation of UV-illuminated PZT films by piezorsponse force microscopy

[{u'author_order': 1, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'full_name': u'Cin-Guan Hong'}, {u'author_order': 2, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'full_name': u'Ching-Pin Hsu'}, {u'author_order': 3, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'full_name': u'Cheng-Fu Yang'}, {u'author_order': 4, u'affiliation': u'Department of Chemical and Materials Engineering, National University of Kaohsiung, Taiwan, R.O.C.', u'full_name': u'Ching-Chich Leu'}] 2010 3rd International Nanoelectronics Conference (INEC), 2010

The Pb(Zr<sub>0.6</sub>,Ti<sub>0.4</sub>)O<sub>3</sub> (PZT) films were prepared using a sol-gel process on top of Pt (150nm)/TiO<sub>2</sub>(20nm)/SiO<sub>2</sub>/Si. Deposited solution layers were exposed to ultraviolet light illumination during the baking process. Then, we used the piezoresponse force microscopy (PFM) to perform the nanoscale observation of ferroelectric domain structure in PZT films.


Monolithic Thin Film Semiconductor Acoustoelectric Convolver

[{u'author_order': 1, u'full_name': u'Z.S. Wu'}, {u'author_order': 2, u'full_name': u'S. Onishi'}, {u'author_order': 3, u'full_name': u'K.S. Chen'}, {u'author_order': 4, u'full_name': u'W.-C. Wang'}] 1981 Ultrasonics Symposium, 1981

None


Kerr Rotation Enhancement with Amorphous Si Layer

[{u'author_order': 1, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'full_name': u'T. Asaka'}, {u'author_order': 2, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'full_name': u'S. Asari'}, {u'author_order': 3, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'full_name': u'Y. Ota'}, {u'author_order': 4, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'full_name': u'K. Nakamura'}, {u'author_order': 5, u'affiliation': u'Institute for Super Materials, ULVAC Corp.', u'full_name': u'A. Itoh'}] IEEE Translation Journal on Magnetics in Japan, 1985

None


On the optimization of silicon film thickness in thin-film SOI devices

[{u'author_order': 1, u'affiliation': u'IMEC, Leuven, Belgium', u'full_name': u'J.-P. Colinge'}, {u'author_order': 2, u'affiliation': u'IMEC, Leuven, Belgium', u'full_name': u'M. Tack'}] IEEE SOS/SOI Technology Conference, 1989

Summary form only given. It is shown that in order to obtain fully depleted SOI MOSFETs with suitable values of threshold voltage (around 0.6 V for the n-channel device), a silicon film thickness smaller than 100 nm must be used. 70 nm should be sufficiently thin. This observation is quite independent of the magnitude of (fixed) oxide charge densities, although ...


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Educational Resources on Films

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IEEE-USA E-Books

  • 7 The ECD Community: A Social Invention (1965–2007)

    Just as energy and information were two sides of the ECD coin, so were scientific innovation and social progress. As ECD gained resources and expanded its research programs, its growth allowed Stan and Iris to build a community based on their shared ideals, drawing on the examples of the Ferrer School, the Mohegan Colony, the Workmen's Circle, and political systems they admired. Building this community was itself an act of social invention. Ovshinsky had been working toward it since his early years in Akron and Arizona shops, where he had helped novice machinists and toolmakers develop their skills and had organized reading groups. ECD was designed to be egalitarian and supportive; people were rewarded for merit and given opportunities to develop their fullest potential. “This was how we believed society ought to be,” he said. And just as he claimed “proof of principle” for pilot versions of his technological innovations, he would claim, “I proved a social thing,” and would speak with pride about his success in changing and helping to mold the lives of ECD staff members.

  • The Matter of Plagiarism: What, Why, and If

    This chapter contains sections titled:The Concept of PlagiarismLack of Authorization—;Economic FoundationsLack of Authorization—Natural or Moral RightsLack of Accreditation—Noninfringing PlagiarismA Personal View of the MatterLiterature Review

  • Group IV Alloys for Advanced Nano‐ and Optoelectronic Applications

    Mainstream semiconductor technology builds on elements of group IV within the periodic table. Crystalline silicon remains the principal base material, whereas germanium and carbon have entered the mainstream in the embedded source/drain technology, as well as in heterojunction bipolar transistors (HBTs) used in BiCMOS technology. Recently, it has been shown that alloying Ge with Sn enables the fabrication of fundamental direct bandgap group IV semiconductors, as well as optically pumped GeSn lasers grown on Si. This achievement pave the route toward efficient and monolithically integrated group IV light emitters, that is, lasers, for electronic‐photonic integrated circuits (EPICs) that could solve the emerging power consumption crisis in complementary metal‐oxide semiconductor (CMOS) technology by enabling optical on‐chip and chip‐to‐chip data transfer. The large parasitic capacitances introduced by various layers of copper (Cu) interconnects demand high transistor IONcurrents, which could be reduced if some of the Cu lines are replaced by optical interconnects.

  • Scribing Graphene Circuits

    This chapter presents a panoramic view of the potential and physical characteristics of graphene oxide (GO) and rGO, from fabrication to physical and electrical properties. The versatility of this material is emphasized by the laser reduction method, which allows the patterning of conductive rGO surrounded by insulating GO. The chemical synthesis of GO from graphite has evolved into a viable technique of producing graphene sheets on a large scale. The exfoliation process consists of breaking the interlayer bonds existing in between the layers of GO, whether by sonication or mechanical stirring, or by chemical compounds with surfactant properties. Raman spectroscopy uses a monochromatic laser to interact with the molecular vibrational modes in a sample. The laser‐assisted selective photo‐thermal reduction of GO into rGO makes it possible to generate accurate conductive patterns isolated by the GO on virtually any stable insulating substrate.

  • On the Field‐Induced Insulator–Metal Transition in VO2 Films

    First‐order metal‐insulator transitions (MITs) in crystalline materials correspond to a transformation between states with a dielectric and metallic types of conductivity. These transitions occur under the influence of external parameters, such as temperature and pressure, as well as with varying material composition. Materials exhibiting these phenomena include many transition metal oxides. First‐order metal insulator phase transitions in thin vanadium dioxide (VO2) films can be controlled by an applied electric field. This chapter discusses the conditions under which the transition can be induced in the entire film, rather than its top sliver. It shows that the favorable situation can be realized when the film is sufficiently thin, so that the energy cost of converting the entire film into the metallic phase is smaller than the would‐be cost of creating a domain boundary between the two phases. The chapter argues that in thin enough films, the entire‐film transition can be stabilized by the domain boundary energy.

  • Presenting the Successful Technical Seminar

    The knowledge explosion and the desire of most business people to enhance their careers has led to a boom in continuing education classes, usually in seminar form. Conducting a successful technical seminar requires careful preparation. Pre-seminar planning includes outlining the material, developing much more material than what is needed, and arranging comfortable and appropriate facilities. At the beginning of the seminar a topical outline should be provided, and plans to take a break between topics can be announced. After the presentation, time should be allowed for a session, not only for questions and answers, but also for an evaluation to help the speaker for the preparation of future seminars.

  • Living Rooms

    This chapter contains sections titled: A Equals B, The Mechanized Home

  • Challenges to Ultralow‐Power Semiconductor Device Operation

    This chapter focuses on the main trends, challenges, limits, and possible solutions for ultra low‐power nanoscale devices in the complementary metal‐oxide‐semiconductor (CMOS) and beyond‐CMOS arena, including novel materials, ultrathin films, and multigates. In the field of MOSFETs, several very interesting advances have been recently reported. Ultrathin semiconductor films and 3D‐field‐effect transistors (FETs) can improve sub‐20 nm CMOS node performance and substantially reduce supply voltage and short channel effects. One are facing dramatic challenges dealing with future nanoscale devices, including performance, power consumption, new materials, device integration, interconnects, ultimate technological processes, and novel functionalities, needing disruptive approaches and inducing fundamental trade‐offs for future ICs and nanosystems. This chapter reviewed recent advances and promising solutions for future ultralow power devices combining novel materials and innovative device architectures, including 2D layers, transition‐metal dichalcogenides (TMDs), heterostructures and quantum wells using strained Si, Ge, and III‐V thin films, as well as multigate, nanowire, CNT transistors, and tunnel FETs.

  • Structure and Electron Transport in Irradiated Monolayer Graphene

    Disordered graphene has attracted the attention of many researchers. Mainly, this is due to the possibility of obtaining a high‐resistance state of graphene films, which is of interest for application in electronics. This chapter discusses ion bombardment as a way of gradually inducing disorder in monolayer graphene. In variable‐range‐hopping (VRH), only localized states within an optimal energy band near the Fermi level are involved in the hopping process. This strong anisotropy indicates unambiguously different mechanisms of magnetoresistance (MR): negative MR in perpendicular fields is connected with orbital effects, while positive MR in parallel fields is determined by the spin polarization. As a result of averaging over different configurations, the contribution of the scattering sites to the total hopping probability vanishes due to destructive interference. The perpendicular magnetic field suppresses the interference, which leads to an increase of the hopping probability and, therefore, to the negative MR.

  • Gripped by Suspense

    This chapter contains sections titled: Sequencing Tactics, Knowing What to Expect, Delayed Gratification, Summary, Coda: What's Wrong with the Future?



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