Conferences related to Drain avalanche hot carrier injection

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2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliab

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)



Xplore Articles related to Drain avalanche hot carrier injection

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New hot-carrier injection and device degradation in submicron MOSFETs

Takeda, E.; Nakagome, Y.; Kume, H.; Asai, S. Solid-State and Electron Devices, IEE Proceedings I, 1983

New kinds of hot-carrier injection mechanisms, which are different from channel hot-electron and substrate hot-electron injection mechanisms already reported by Ning, et al., are presented. These are first drain avalanche hot- carrier (DAHC) injection and secondly substrate current induced hot-electron (SCHE) injection. DAHC injection is due to the emission of electrons and holes heated in the drain avalanche plasma. SCHE ...


Hot-carrier-resistant structure by Re-oxidized nitrided oxide sidewall for highly reliable and high performance LDD MOSFETs

Kusunoki, S.; Inuishi, M.; Yamaguchi, T.; Tsukamoto, K.; Akasaka, Y. Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International, 1991

The authors have proposed a novel structure which satisfies both high performance and high reliability with re-oxidized nitrided oxide (RNO) film in the sidewall of the LDD (lightly doped drain) transistor using rapid thermal nitridation (RTN). With this structure, the hot-carrier resistance of the LDD can be improved without the degradation of mobility as seen in MOSFETs having the RNO ...


AC hot-carrier effects in scaled MOS devices

Takeda, E.; Izawa, Ryuichi; Umeda, Kazunori; Nagai, R. Reliability Physics Symposium, 1991, 29th Annual Proceedings., International, 1991

AC hot-carrier effects with complete precautions against the wiring inductance noises were investigated to get a universal guideline from the viewpoints of AC conditions and device structures (single drain (SD), LDD, and GOLD). Pulse- induced-noises due to the wiring inductance of measurement systems screens intrinsic AC effects. After precautions against noises, AC hot-carrier degradation can be estimated in LDD on ...


Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's

Takeda, E.; Shimizu, A.; Hagiwara, T. Electron Device Letters, IEEE, 1983

Drain avalanche hot-carrier (DAHC) injection, which imposes the most severe limitations on n-channel MOS device design, is investigated from the viewpoint of surface-state generation and its localized area in the channel. It is shown, using the charge pumping technique, that the surface states are mainly created by hot-hole injection, and its small degraded area stretches toward the source region with ...


TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

Miura, N.; Hayashi, H.; Komatsubara, H.; Mochizuki, M.; Fukuda, K. Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on, 2002

We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and ION, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.


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Periodicals related to Drain avalanche hot carrier injection

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



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