IEEE Organizations related to Drain avalanche hot carrier injection

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Conferences related to Drain avalanche hot carrier injection

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2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)



Periodicals related to Drain avalanche hot carrier injection

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Drain avalanche hot carrier injection

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Xplore Articles related to Drain avalanche hot carrier injection

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A comprehensive methodology and model for the characterization of hot-carrier induced MOS device degradation

Waisum Wong; A. Icel Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on, 1995

One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection into the gate oxide due to the high electric fields on the drain/source terminals or across the channel. Many previous works have been devoted to the MOS device degradation theory and the lifetime prediction. This paper, on the other hand, ...


TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

N. Miura; H. Hayashi; H. Komatsubara; A. Mochizuki; K. Fukuda Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on, 2002

We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and ION, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.


Beating the heat [CMOS hot-carrier reliability]

D. S. Sugiharto; C. Y. Yang; Huy Le; J. E. Chung IEEE Circuits and Devices Magazine, 1998

CMOS hot-carrier reliability at both transistor and circuit levels has been examined. Accurate reliability assessment requires defining suitable criteria for acceptable performance for both circuit and individual transistors. As device designers meet demands for greater speed and more complex circuitry accompanied by shrinking the size of transistor into the deep-submicron regime, they have to contend with increase in current densities ...


On the Topological Design of Distributed Computer Networks

M. Gerla; L. Kleinrock IEEE Transactions on Communications, 1977

The problem of data transmission in a network environment involves the design of a communication subnetwork. Recently, significant progress has been made in this technology, and in this article we survey the modeling, analysis, and design of such computercommunication networks. Most of the design methodology presented has been developed with the packet-switched Advanced Research Projects Agency Network (ARPANET) in mind, ...


New hot-carrier degradation mode in PMOSFETs with W gate electrodes

H. Matsuhashi; T. Hayashi; S. Nishikawa IEEE Electron Device Letters, 1991

Hot-carrier degradation of W gate PMOSFETs, which are surface-channel devices because of the work function of W, has been investigated in comparison with polycide (WSi/sub x//n/sup +/ poly-Si) ones. In W gate PMOSFETs, transconductance g/sub m/ and threshold voltage V/sub th/ decrease on the drain avalanche hot-carrier (DAHC) stress, and Delta g/sub m//g/sub m0/ and Delta V/sub th/ become minimum ...


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Educational Resources on Drain avalanche hot carrier injection

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eLearning

A comprehensive methodology and model for the characterization of hot-carrier induced MOS device degradation

Waisum Wong; A. Icel Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on, 1995

One of the main concerns in the submicron MOS technologies is the device lifetime associated with the hot carrier injection into the gate oxide due to the high electric fields on the drain/source terminals or across the channel. Many previous works have been devoted to the MOS device degradation theory and the lifetime prediction. This paper, on the other hand, ...


TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

N. Miura; H. Hayashi; H. Komatsubara; A. Mochizuki; K. Fukuda Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on, 2002

We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and ION, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.


Beating the heat [CMOS hot-carrier reliability]

D. S. Sugiharto; C. Y. Yang; Huy Le; J. E. Chung IEEE Circuits and Devices Magazine, 1998

CMOS hot-carrier reliability at both transistor and circuit levels has been examined. Accurate reliability assessment requires defining suitable criteria for acceptable performance for both circuit and individual transistors. As device designers meet demands for greater speed and more complex circuitry accompanied by shrinking the size of transistor into the deep-submicron regime, they have to contend with increase in current densities ...


On the Topological Design of Distributed Computer Networks

M. Gerla; L. Kleinrock IEEE Transactions on Communications, 1977

The problem of data transmission in a network environment involves the design of a communication subnetwork. Recently, significant progress has been made in this technology, and in this article we survey the modeling, analysis, and design of such computercommunication networks. Most of the design methodology presented has been developed with the packet-switched Advanced Research Projects Agency Network (ARPANET) in mind, ...


New hot-carrier degradation mode in PMOSFETs with W gate electrodes

H. Matsuhashi; T. Hayashi; S. Nishikawa IEEE Electron Device Letters, 1991

Hot-carrier degradation of W gate PMOSFETs, which are surface-channel devices because of the work function of W, has been investigated in comparison with polycide (WSi/sub x//n/sup +/ poly-Si) ones. In W gate PMOSFETs, transconductance g/sub m/ and threshold voltage V/sub th/ decrease on the drain avalanche hot-carrier (DAHC) stress, and Delta g/sub m//g/sub m0/ and Delta V/sub th/ become minimum ...


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