IEEE Organizations related to Drain avalanche hot carrier injection

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Conferences related to Drain avalanche hot carrier injection

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2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)



Periodicals related to Drain avalanche hot carrier injection

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Drain avalanche hot carrier injection

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Xplore Articles related to Drain avalanche hot carrier injection

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Large-scale maximum likelihood-based phylogenetic analysis on the IBM BlueGene/L

Ott, M.; Zola, J.; Stamatakis, A.; Aluru, S. Supercomputing, 2007. SC '07. Proceedings of the 2007 ACM/IEEE Conference on, 2007

Phylogenetic inference is a grand challenge in Bioinformatics due to immense computational requirements. The increasing popularity of multi-gene alignments in biological studies, which typically provide a stable topological signal due to a more favorable ratio of the number of base pairs to the number of sequences, coupled with rapid accumulation of sequence data in general, poses new challenges for high ...


Mechanism of device degradation under AC stress in low-temperature polycrystalline silicon TFTs

Toyota, Y.; Shiba, T.; Ohkura, M. Reliability Physics Symposium Proceedings, 2002. 40th Annual, 2002

Enhanced device degradation of low-temperature polycrystalline thin-film transistors (poly-Si TFTs) under exposure to AC stress has been quantitatively analyzed. Degradation of the device characteristics of a single-drain (SD) TFT is greater under AC stress than under DC stress over an equivalent period. Hot holes are strongly related to this greater severity of degradation. A lightly doped drain (LDD) TFT is ...


Age-based packet arbitration in large-radix k-ary n-cubes

Abts, D.; Weisser, Deborah Supercomputing, 2007. SC '07. Proceedings of the 2007 ACM/IEEE Conference on, 2007

As applications scale to increasingly large processor counts, the interconnection network is frequently the limiting factor in application performance. In order to achieve application scalability, the interconnect must maintain high bandwidth while minimizing variation in packet latency. As the offered load in the network increases with growing problem sizes and processor counts, so does the expected maximum packet latency in ...


Transient and time-harmonic diffraction by a semi-infinite cone

Kuan-Kin Chan; Felsen, L.B. Antennas and Propagation, IEEE Transactions on, 1977

New representations for the time-dependent scalar Green's functions for a perfectly conducting semi-infinite cone are derived. When the cone angle is small and the source is located on the cone axis, the solutions for all observation times can be expressed in remarkably simple closed forms involving only elementary functions. New elementary time-harmonic Green's function approximations, valid for all frequencies, are ...


A new model for device degradation in low-temperature N-channel polycrystalline silicon TFTs under AC stress

Toyota, Y.; Shiba, T.; Ohkura, M. Electron Devices, IEEE Transactions on, 2004

Enhanced device degradation of low-temperature n-channel polycrystalline thin- film transistors (poly-silicon TFTs) under exposure to ac stress has been quantitatively analyzed. This analysis showed that degradation of the device characteristics of a single-drain (SD) TFT is greater under ac stress than under dc stress over an equivalent period. It was found that hot holes are strongly related to this greater ...


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