IEEE Organizations related to Drain avalanche hot carrier injection

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Conferences related to Drain avalanche hot carrier injection

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2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)



Periodicals related to Drain avalanche hot carrier injection

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Drain avalanche hot carrier injection

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Xplore Articles related to Drain avalanche hot carrier injection

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High-frequency fields excited by a line source located on a concave cylindrical impedance surface

Ishihara, T.; Felsen, L.B. Antennas and Propagation, IEEE Transactions on, 1979

A previous study of high-frequency currents induced by a line source on a perfectly conducting concave cylindrical surface is extended to the case of nonvanishing surface impedance ![Z_{s}](/images/tex/12972.gif) . Alternative field representations are formulated and evaluated asymptotically as combinations of ray-optical, whispering gallery (WG) mode, surface wave, continuous spectrum, and canonical integral contributions. Numerical calculations provide an insight into the ...


Mechanism of device degradation under AC stress in low-temperature polycrystalline silicon TFTs

Toyota, Y.; Shiba, T.; Ohkura, M. Reliability Physics Symposium Proceedings, 2002. 40th Annual, 2002

Enhanced device degradation of low-temperature polycrystalline thin-film transistors (poly-Si TFTs) under exposure to AC stress has been quantitatively analyzed. Degradation of the device characteristics of a single-drain (SD) TFT is greater under AC stress than under DC stress over an equivalent period. Hot holes are strongly related to this greater severity of degradation. A lightly doped drain (LDD) TFT is ...


A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

Koike, N.; Tatsuuma, K. Reliability Physics Symposium Proceedings, 2002. 40th Annual, 2002

A simple and physical drain avalanche hot carrier lifetime model has been proposed. The model is based on a mechanism of interface trap generation caused by recombination of hot electrons and hot holes. The lifetime is modeled as τ(Id/W)2∝(Isub/Id)-m. The formula is different from the conventional τId/W-Isub/Id model in that the exponent of Id/W is 2, which results from the ...


Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's

Takeda, E.; Shimizu, A.; Hagiwara, T. Electron Device Letters, IEEE, 1983

Drain avalanche hot-carrier (DAHC) injection, which imposes the most severe limitations on n-channel MOS device design, is investigated from the viewpoint of surface-state generation and its localized area in the channel. It is shown, using the charge pumping technique, that the surface states are mainly created by hot-hole injection, and its small degraded area stretches toward the source region with ...


Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs

Sang-Gi Lee; Hwang, Jeong-Mo; Hi-Deok Lee Electron Devices, IEEE Transactions on, 2002

It is shown that in 0.15-μm NMOSFETs the device lifetime under channel hot- carrier (CHC) stress is lower than that under drain avalanche hot-carrier (DAHC) stress and therefore the hot-carrier stress-induced device degradation in 0.15-μm NMOSFETs cannot be explained in the framework of the lucky electron model (LEM). Our investigation suggests that such a "non-LEM effect" may be due to ...


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