IEEE Organizations related to Drain avalanche hot carrier injection

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Conferences related to Drain avalanche hot carrier injection

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2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)



Periodicals related to Drain avalanche hot carrier injection

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Drain avalanche hot carrier injection

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Xplore Articles related to Drain avalanche hot carrier injection

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A Designer/Verifier's Assistant

M. S. Moriconi IEEE Transactions on Software Engineering, 1979

Since developing and maintaining formally verified programs is an incremental activity, one is not only faced with the problem of constructing specifications, programs, and proofs, but also with the complex problem of determining what previous work remains valid following incremental changes. A system that reasons about changes must build a detailed model of each development and be able to apply ...


Measures of Complexity of Fault Diagnosis Tasks

IEEE Transactions on Systems, Man, and Cybernetics, 1979

None


A novel substrate hot electron and hole injection structure with a double-implanted buried-channel MOSFET

S. Yoon; R. Siergiej; M. H. White IEEE Transactions on Electron Devices, 1991

Summary form only given. Substrate hot electron and hole injection into the same gate insulator is achieved with a double ion-implanted buried-channel n-channel MOSFET device. Under the gate, the impurity profile is n-on-n+ on a p substrate. The n-on-n+ buried channel, which is formed by implanting the phosphorus ions twice (first, deep heavy implant and, second, shallow and light implant), ...


Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs

Sang-Gi Lee; Jeong-Mo Hwang; Hi-Deok Lee IEEE Transactions on Electron Devices, 2002

It is shown that in 0.15-μm NMOSFETs the device lifetime under channel hot- carrier (CHC) stress is lower than that under drain avalanche hot-carrier (DAHC) stress and therefore the hot-carrier stress-induced device degradation in 0.15-μm NMOSFETs cannot be explained in the framework of the lucky electron model (LEM). Our investigation suggests that such a "non-LEM effect" may be due to ...


A Novel Substrate Hot Electron and Hole Injection Structure with a Double Implanted Buried Channel Mosfet

Sukvoon Yoon; R. Siergiej; M. H. White Device Research Conference, 1991. 49th Annual, 1991

First Page of the Article ![](/xploreAssets/images/absImages/00664731.png)


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Educational Resources on Drain avalanche hot carrier injection

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eLearning

A Designer/Verifier's Assistant

M. S. Moriconi IEEE Transactions on Software Engineering, 1979

Since developing and maintaining formally verified programs is an incremental activity, one is not only faced with the problem of constructing specifications, programs, and proofs, but also with the complex problem of determining what previous work remains valid following incremental changes. A system that reasons about changes must build a detailed model of each development and be able to apply ...


Measures of Complexity of Fault Diagnosis Tasks

IEEE Transactions on Systems, Man, and Cybernetics, 1979

None


A novel substrate hot electron and hole injection structure with a double-implanted buried-channel MOSFET

S. Yoon; R. Siergiej; M. H. White IEEE Transactions on Electron Devices, 1991

Summary form only given. Substrate hot electron and hole injection into the same gate insulator is achieved with a double ion-implanted buried-channel n-channel MOSFET device. Under the gate, the impurity profile is n-on-n+ on a p substrate. The n-on-n+ buried channel, which is formed by implanting the phosphorus ions twice (first, deep heavy implant and, second, shallow and light implant), ...


Experimental evidence for nonlucky electron model effect in 0.15-μm NMOSFETs

Sang-Gi Lee; Jeong-Mo Hwang; Hi-Deok Lee IEEE Transactions on Electron Devices, 2002

It is shown that in 0.15-μm NMOSFETs the device lifetime under channel hot- carrier (CHC) stress is lower than that under drain avalanche hot-carrier (DAHC) stress and therefore the hot-carrier stress-induced device degradation in 0.15-μm NMOSFETs cannot be explained in the framework of the lucky electron model (LEM). Our investigation suggests that such a "non-LEM effect" may be due to ...


A Novel Substrate Hot Electron and Hole Injection Structure with a Double Implanted Buried Channel Mosfet

Sukvoon Yoon; R. Siergiej; M. H. White Device Research Conference, 1991. 49th Annual, 1991

First Page of the Article ![](/xploreAssets/images/absImages/00664731.png)


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