IEEE Organizations related to Drain avalanche hot carrier injection

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Conferences related to Drain avalanche hot carrier injection

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2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)



Periodicals related to Drain avalanche hot carrier injection

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Drain avalanche hot carrier injection

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Xplore Articles related to Drain avalanche hot carrier injection

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Canonical forms for multi-input/multi-output minimal systems

M. Budin IEEE Transactions on Automatic Control, 1972

This correspondence presents an explicit discussion of the canonical forms for multi-input/multi-output minimal systems that are implicit in [1, eq. (13)-(20)]. The obvious advantage of these canonical forms is that they have the fewest free parameters. This becomes computationally significant in various parameter identification procedures.


In-Line Monitoring of Hot Carrier Lifetime and Its Dependency on Process Parameter for Submicron High Density DRAM Manufacturing

S. C. Hong; D. H. Shin; W. Lee; B. I. Ryu; H. K. Chung International Integrated Reliability Workshop Final Report, 1993

First Page of the Article ![](/xploreAssets/images/absImages/00666323.png)


Transient and time-harmonic diffraction by a semi-infinite cone

Kuan-Kin Chan; L. Felsen IEEE Transactions on Antennas and Propagation, 1977

New representations for the time-dependent scalar Green's functions for a perfectly conducting semi-infinite cone are derived. When the cone angle is small and the source is located on the cone axis, the solutions for all observation times can be expressed in remarkably simple closed forms involving only elementary functions. New elementary time-harmonic Green's function approximations, valid for all frequencies, are ...


A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors

Tetsufumi Kawamura; Mieko Matsumura; Takuo Kaitoh; Takeshi Noda; Mutsuko Hatano; Toshio Miyazawa; Makoto Ohkura IEEE Transactions on Electron Devices, 2009

A model for predicting on-current degradation caused by drain-avalanche hot carriers in NMOS low-temperature polysilicon thin-film transistors (TFTs) is described. The amount of trapped charge caused by hot-carrier stress was estimated by using a model describing the lightly doped drain region as an imaginary TFT, and it was found that the amount of trapped charge saturates as voltage-stress time passes. ...


Low temperature gate current and `channel' hot carriers in MOS transistors

A. K. Henning Proceedings of the Workshop on Low Temperature Semiconductor Electronics,, 1989

It is demonstrated that the scattering of channel hot carriers cannot explain the temperature dependence of the observed IG vs. VG (gate current vs. gate voltage) characteristic in MOS transistors. As a result, drain avalanche hot carriers alone can explain the experimental observations. Since they include both electrons and holes, because of their origin in impact ionization, the whole spectrum ...


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Educational Resources on Drain avalanche hot carrier injection

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eLearning

Canonical forms for multi-input/multi-output minimal systems

M. Budin IEEE Transactions on Automatic Control, 1972

This correspondence presents an explicit discussion of the canonical forms for multi-input/multi-output minimal systems that are implicit in [1, eq. (13)-(20)]. The obvious advantage of these canonical forms is that they have the fewest free parameters. This becomes computationally significant in various parameter identification procedures.


In-Line Monitoring of Hot Carrier Lifetime and Its Dependency on Process Parameter for Submicron High Density DRAM Manufacturing

S. C. Hong; D. H. Shin; W. Lee; B. I. Ryu; H. K. Chung International Integrated Reliability Workshop Final Report, 1993

First Page of the Article ![](/xploreAssets/images/absImages/00666323.png)


Transient and time-harmonic diffraction by a semi-infinite cone

Kuan-Kin Chan; L. Felsen IEEE Transactions on Antennas and Propagation, 1977

New representations for the time-dependent scalar Green's functions for a perfectly conducting semi-infinite cone are derived. When the cone angle is small and the source is located on the cone axis, the solutions for all observation times can be expressed in remarkably simple closed forms involving only elementary functions. New elementary time-harmonic Green's function approximations, valid for all frequencies, are ...


A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors

Tetsufumi Kawamura; Mieko Matsumura; Takuo Kaitoh; Takeshi Noda; Mutsuko Hatano; Toshio Miyazawa; Makoto Ohkura IEEE Transactions on Electron Devices, 2009

A model for predicting on-current degradation caused by drain-avalanche hot carriers in NMOS low-temperature polysilicon thin-film transistors (TFTs) is described. The amount of trapped charge caused by hot-carrier stress was estimated by using a model describing the lightly doped drain region as an imaginary TFT, and it was found that the amount of trapped charge saturates as voltage-stress time passes. ...


Low temperature gate current and `channel' hot carriers in MOS transistors

A. K. Henning Proceedings of the Workshop on Low Temperature Semiconductor Electronics,, 1989

It is demonstrated that the scattering of channel hot carriers cannot explain the temperature dependence of the observed IG vs. VG (gate current vs. gate voltage) characteristic in MOS transistors. As a result, drain avalanche hot carriers alone can explain the experimental observations. Since they include both electrons and holes, because of their origin in impact ionization, the whole spectrum ...


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