IEEE Organizations related to Drain avalanche hot carrier injection

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Conferences related to Drain avalanche hot carrier injection

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2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.

  • 2006 IEEE International Integrated Reliability Workshop (IRW)

  • 2005 IEEE International Integrated Reliability Workshop (IRW)



Periodicals related to Drain avalanche hot carrier injection

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Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.



Most published Xplore authors for Drain avalanche hot carrier injection

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Xplore Articles related to Drain avalanche hot carrier injection

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Transient and time-harmonic diffraction by a semi-infinite cone

Kuan-Kin Chan; Felsen, L.B. Antennas and Propagation, IEEE Transactions on, 1977

New representations for the time-dependent scalar Green's functions for a perfectly conducting semi-infinite cone are derived. When the cone angle is small and the source is located on the cone axis, the solutions for all observation times can be expressed in remarkably simple closed forms involving only elementary functions. New elementary time-harmonic Green's function approximations, valid for all frequencies, are ...


A likelihood ratio formula for two-dimensional random fields

Wong, E. Information Theory, IEEE Transactions on, 1974

This paper is concerned with the detection of a random signal in white Gaussian noise when both the signal and the noise are two-dimensional random fields. The principal result is the derivation of a recursive formula for the likelihood ratio relating it to certain conditional moments of the signal. It is also shown that, except for some relatively uninteresting cases, ...


A new model for device degradation in low-temperature N-channel polycrystalline silicon TFTs under AC stress

Toyota, Y.; Shiba, T.; Ohkura, M. Electron Devices, IEEE Transactions on, 2004

Enhanced device degradation of low-temperature n-channel polycrystalline thin- film transistors (poly-silicon TFTs) under exposure to ac stress has been quantitatively analyzed. This analysis showed that degradation of the device characteristics of a single-drain (SD) TFT is greater under ac stress than under dc stress over an equivalent period. It was found that hot holes are strongly related to this greater ...


Device performance degradation to hot-carrier injection at energies below the Si-SiO<inf>2</inf>energy barrier

Takeda, E.; Suzuki, Norio; Hagiwara, T. Electron Devices Meeting, 1983 International, 1983

Device performance degradation due to hot-carriers having energies below the Si-SiO2energy barrier are examined. For a test device with Leff= 0.3 µm and Tox5 nm, transconductance degradation and/or threshold voltage shift have been detected at a drain voltage of 2.5 V, which is lower than the Si-SiO2energy barrier(∼ 3.2 eV). In particular, transconductance degradation, rather than threshold voltage shift, is ...


Hole-induced 1/f noise increase in MOS transistors

Aoki, M.; Kato, M. Electron Device Letters, IEEE, 1996

This paper presents experimental evidence for hole-generated 1/f noise traps in gate oxides near the MOS interface. To clarify the microscopic nature of noise traps, 1/f noise is measured in Si MOS transistors in which carriers are intentionally injected into the gate oxides. It was found that 1/f noise increases more rapidly after drain avalanche hot-carrier injection than after channel ...


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