Drain avalanche hot carrier injection
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2013 IEEE International Integrated Reliability Workshop (IIRW)
We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.
Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Kuan-Kin Chan; Felsen, L.B. Antennas and Propagation, IEEE Transactions on, 1977
New representations for the time-dependent scalar Green's functions for a perfectly conducting semi-infinite cone are derived. When the cone angle is small and the source is located on the cone axis, the solutions for all observation times can be expressed in remarkably simple closed forms involving only elementary functions. New elementary time-harmonic Green's function approximations, valid for all frequencies, are ...
Wong, E. Information Theory, IEEE Transactions on, 1974
This paper is concerned with the detection of a random signal in white Gaussian noise when both the signal and the noise are two-dimensional random fields. The principal result is the derivation of a recursive formula for the likelihood ratio relating it to certain conditional moments of the signal. It is also shown that, except for some relatively uninteresting cases, ...
Toyota, Y.; Shiba, T.; Ohkura, M. Electron Devices, IEEE Transactions on, 2004
Enhanced device degradation of low-temperature n-channel polycrystalline thin- film transistors (poly-silicon TFTs) under exposure to ac stress has been quantitatively analyzed. This analysis showed that degradation of the device characteristics of a single-drain (SD) TFT is greater under ac stress than under dc stress over an equivalent period. It was found that hot holes are strongly related to this greater ...
Takeda, E.; Suzuki, Norio; Hagiwara, T. Electron Devices Meeting, 1983 International, 1983
Device performance degradation due to hot-carriers having energies below the Si-SiO2energy barrier are examined. For a test device with Leff= 0.3 µm and Tox5 nm, transconductance degradation and/or threshold voltage shift have been detected at a drain voltage of 2.5 V, which is lower than the Si-SiO2energy barrier(∼ 3.2 eV). In particular, transconductance degradation, rather than threshold voltage shift, is ...
Aoki, M.; Kato, M. Electron Device Letters, IEEE, 1996
This paper presents experimental evidence for hole-generated 1/f noise traps in gate oxides near the MOS interface. To clarify the microscopic nature of noise traps, 1/f noise is measured in Si MOS transistors in which carriers are intentionally injected into the gate oxides. It was found that 1/f noise increases more rapidly after drain avalanche hot-carrier injection than after channel ...
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