Conferences related to Digital alloys

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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)

This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.



Periodicals related to Digital alloys

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Digital alloys

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A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 /spl mu/m lasers

Spring Thorpe, A.J.; Extavour, M.; Griswold, E.M.; Shen, A.; White, J.K.; Hinzer, K. Molecular Beam Epitaxy, 2002 International Conference on, 2002

As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3 /spl mu/m, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range 470 to 585/spl deg/C. Deposition of both digital and bulk alloy layers was carried out in a ...


Development of Extremely-Low-Sag INVAR Reinforced ACSR (XTACIR)

Sakabe, S.; Mori, N.; Sato, K.; Miyake, Y.; Tanaka, A. Power Engineering Review, IEEE, 1981

Summary form only given, as follows.


Experimental and theoretical study on digital-alloy In(Ga<inf>1&#x2212;z</inf>Al<inf>z</inf>)As structure

Duchang Heo; Song, J.D.; Han, I.K.; Yang, K.; Kim, J.; Jeon, S. Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on, 2013

To fully understand optical properties of digital-alloy (InGaAs)1-z(InAlAs)z grown on InP by MBE, we theoretically calculate the emission energies of digital-alloy (InGaAs)1-z(InAlAs)z using 4×4 k*p Hamiltonian and compare them with photoluminescence data.


Characteristics of laminated alloy films heads for high frequency recording

Saito, K. Magnetics, IEEE Transactions on, 1990

Excellent performance of laminated Fe-Si-Al alloy film heads is demonstrated in applications to high-definition VCR and to digital recording. It is emphasized that these results are derived not only from the ring-shaped core geometry but also from the isotropic behavior in the magnetic properties of the sputtered Fe-Si-Al alloy films. The experimental results on the isotropic magnetic behavior are summarized. ...


A comparison of &part;-doped quantum well structures for power FET applications

Roberts, J.M.; Harris, J.J.; Hopkinson, M.; Roberts, C. Electron Devices Meeting, 1996., IEEE Hong Kong, 1996

A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation


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Educational Resources on Digital alloys

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