Conferences related to Digital alloys

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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)

This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.



Periodicals related to Digital alloys

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Digital alloys

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Fabrication of 1.55 &mu;m In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.53</sub>(Ga<sub>0.6</sub>Al<sub>0.4</sub>)<sub>0.47</sub>As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

Jae Su Yu; Jin Dong Song; Jong Min Kim; Seong Ju Bae; Yong Tak Lee Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002

We fabricated MBE-grown InGaAs/InGaAlAs SCH MQW ridge-waveguide lasers with InGaAlAs digital alloy layers after post-growth rapid thermal annealing using an SiO2 capping layer. The lasers fabricated on as-grown substrate and annealed substrates were compared by I-V and I-L measurements. The electrical characteristics of the annealed lasers were not degraded by the annealing process compared to those of as-grown lasers. The ...


Design and Fabrication of 1.35-<formula formulatype="inline"> \mu{\rm m} </formula> Laser Diodes With Full Digital-Alloy InGaAlAs MQW

Duchang Heo; Jin Dong Song; Il Ki Han; Won Jun Choi; Yong Tak Lee IEEE Journal of Quantum Electronics, 2013

We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained ...


Low excess noise Al<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>Sb<inf>1-y</inf> (x: 0.3&#x223C;0.7) avalanche photodiodes

M. Ren; S. J. Maddox; M. E. Woodson; Y. Chen; S. R. Bank; J. C. Campbell 2016 Conference on Lasers and Electro-Optics (CLEO), 2016

We report avalanche photodiodes fabricated from a previously uncharacterized material system, AlxIn1-xAsySb1-y digital alloy. A series of AlxIn1-xAsySb1-y (x: 0.3~0.7) p-i-n avalanche photodiodes have been grown on GaSb substrate. Dark current characteristics, avalanche multiplication, external quantum efficiency, and excess noise are presented. Very low excess noise, corresponding to k = 0.03~0.05, has been observed.


Damage Mechanics and Experiments of Lead-free Solder Alloy

Jun Zhou; WeiNa Hao; GuoZhong Chai 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 2006

Based on DSCM (digital speckle correlation method), a novel video control experimental technique was developed for assessing mechanical behavior of SnAgCu solder alloy. A series of experimental tests in tension on a SnAgCu solder alloy have been conducted under various constant strain rates ranging from 10E-5/s to 10E-3/s and at 298K to 423K. The experimental results have revealed the presence ...


A comparison of &part;-doped quantum well structures for power FET applications

J. M. Roberts; J. J. Harris; M. Hopkinson; C. Roberts Proceedings 1996 IEEE Hong Kong Electron Devices Meeting, 1996

A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation


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Educational Resources on Digital alloys

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eLearning

Fabrication of 1.55 &mu;m In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.53</sub>(Ga<sub>0.6</sub>Al<sub>0.4</sub>)<sub>0.47</sub>As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

Jae Su Yu; Jin Dong Song; Jong Min Kim; Seong Ju Bae; Yong Tak Lee Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002

We fabricated MBE-grown InGaAs/InGaAlAs SCH MQW ridge-waveguide lasers with InGaAlAs digital alloy layers after post-growth rapid thermal annealing using an SiO2 capping layer. The lasers fabricated on as-grown substrate and annealed substrates were compared by I-V and I-L measurements. The electrical characteristics of the annealed lasers were not degraded by the annealing process compared to those of as-grown lasers. The ...


Design and Fabrication of 1.35-<formula formulatype="inline"> \mu{\rm m} </formula> Laser Diodes With Full Digital-Alloy InGaAlAs MQW

Duchang Heo; Jin Dong Song; Il Ki Han; Won Jun Choi; Yong Tak Lee IEEE Journal of Quantum Electronics, 2013

We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained ...


Low excess noise Al<inf>x</inf>In<inf>1-x</inf>As<inf>y</inf>Sb<inf>1-y</inf> (x: 0.3&#x223C;0.7) avalanche photodiodes

M. Ren; S. J. Maddox; M. E. Woodson; Y. Chen; S. R. Bank; J. C. Campbell 2016 Conference on Lasers and Electro-Optics (CLEO), 2016

We report avalanche photodiodes fabricated from a previously uncharacterized material system, AlxIn1-xAsySb1-y digital alloy. A series of AlxIn1-xAsySb1-y (x: 0.3~0.7) p-i-n avalanche photodiodes have been grown on GaSb substrate. Dark current characteristics, avalanche multiplication, external quantum efficiency, and excess noise are presented. Very low excess noise, corresponding to k = 0.03~0.05, has been observed.


Damage Mechanics and Experiments of Lead-free Solder Alloy

Jun Zhou; WeiNa Hao; GuoZhong Chai 2006 Conference on Optoelectronic and Microelectronic Materials and Devices, 2006

Based on DSCM (digital speckle correlation method), a novel video control experimental technique was developed for assessing mechanical behavior of SnAgCu solder alloy. A series of experimental tests in tension on a SnAgCu solder alloy have been conducted under various constant strain rates ranging from 10E-5/s to 10E-3/s and at 298K to 423K. The experimental results have revealed the presence ...


A comparison of &part;-doped quantum well structures for power FET applications

J. M. Roberts; J. J. Harris; M. Hopkinson; C. Roberts Proceedings 1996 IEEE Hong Kong Electron Devices Meeting, 1996

A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation


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IEEE-USA E-Books

  • About the Editors

    "As digital data storage technology undergoes enormous change, electrical engineers, physicists, and materials scientists need to keep pace with the materials requirements for recording media. Expert contributors -- together with world-class authorities Richard J. Gambino and Takao Suzuki -- bring you a practical, comprehensive guide to materials design and selection for magneto-optical storage media. This authoritative book explores multilayered thin films, exchanged coupled layers, materials used in current products, and materials of potential interest not yet available in practical applications. A detailed analysis concerning the physics of magneto-optical recording will help you make informed decisions about materials properties. You will also find an extensive discussion of systems and engineering design features for magneto-optical storage devices. This discussion will help you to understand how materials properties impact system performance. You will gain additional insight into this fast-developing field through in-depth coverage of these featured topics: * Rare earth-transition metal amorphous alloys, multilayers, garnets, intermetallic compounds, and ferrites * Basic principles of domain dynamics and recording physics * Latest developments in exchange coupled layers, direct overwrite, and magnetic superresolution * Minidisc, future high-density systems, and DVD format. MAGNETO-OPTICAL RECORDING MATERIALS is essential reading for anyone who needs to keep up-to-date with the latest advances in digital data storage technology."

  • Index

    "As digital data storage technology undergoes enormous change, electrical engineers, physicists, and materials scientists need to keep pace with the materials requirements for recording media. Expert contributors -- together with world-class authorities Richard J. Gambino and Takao Suzuki -- bring you a practical, comprehensive guide to materials design and selection for magneto-optical storage media. This authoritative book explores multilayered thin films, exchanged coupled layers, materials used in current products, and materials of potential interest not yet available in practical applications. A detailed analysis concerning the physics of magneto-optical recording will help you make informed decisions about materials properties. You will also find an extensive discussion of systems and engineering design features for magneto-optical storage devices. This discussion will help you to understand how materials properties impact system performance. You will gain additional insight into this fast-developing field through in-depth coverage of these featured topics: * Rare earth-transition metal amorphous alloys, multilayers, garnets, intermetallic compounds, and ferrites * Basic principles of domain dynamics and recording physics * Latest developments in exchange coupled layers, direct overwrite, and magnetic superresolution * Minidisc, future high-density systems, and DVD format. MAGNETO-OPTICAL RECORDING MATERIALS is essential reading for anyone who needs to keep up-to-date with the latest advances in digital data storage technology."



Standards related to Digital alloys

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