Conferences related to Digital alloys

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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)

This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.



Periodicals related to Digital alloys

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Digital alloys

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Characteristics of laminated alloy films heads for high frequency recording

K. Saito IEEE Transactions on Magnetics, 1990

Excellent performance of laminated Fe-Si-Al alloy film heads is demonstrated in applications to high-definition VCR and to digital recording. It is emphasized that these results are derived not only from the ring-shaped core geometry but also from the isotropic behavior in the magnetic properties of the sputtered Fe-Si-Al alloy films. The experimental results on the isotropic magnetic behavior are summarized. ...


Fabrication of 1.55 &mu;m In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.53</sub>(Ga<sub>0.6</sub>Al<sub>0.4</sub>)<sub>0.47</sub>As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

Jae Su Yu; Jin Dong Song; Jong Min Kim; Seong Ju Bae; Yong Tak Lee Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002

We fabricated MBE-grown InGaAs/InGaAlAs SCH MQW ridge-waveguide lasers with InGaAlAs digital alloy layers after post-growth rapid thermal annealing using an SiO2 capping layer. The lasers fabricated on as-grown substrate and annealed substrates were compared by I-V and I-L measurements. The electrical characteristics of the annealed lasers were not degraded by the annealing process compared to those of as-grown lasers. The ...


Modulated beam growth and interface control in III-AsSb laser heterostructures

R. Kaspi; A. P. Ongstad; G. C. Dente; M. Weimer International Conference on Molecular Bean Epitaxy, 2002

The molecular beam epitaxy of advanced heterostructures containing mixed arsenide/ antimonide layers presents a number of special challenges. A 5 /spl mu/m thick laser designed to emit mid-infrared radiation of 4 /spl mu/m wavelength, for example, may incorporate thick (/spl sim/2 /spl mu/m) lattice- matched AlGaAsSb layers for optical confinement, thinner (/spl sim/0.1 /spl mu/m) lattice-matched InGaAsSb layers for electrical ...


Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor

C. R. Bolognesi; J. D. Werking; E. J. Caine; H. Kroemer; E. L. Hu IEEE Electron Device Letters, 1993

High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The ...


1.58-&#x003BC;m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers

G. T. Liu; A. Stintz; E. A. Pease; T. C. Newell; K. J. Malloy; L. F. Lester IEEE Photonics Technology Letters, 2000

A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employed to grow lattice-matched and strained AlGaInAs multiple-quantum well (MQW) 1.58-μm laser diodes on InP. A threshold current density as low as 510 A/cm2 has been demonstrated for broad area lasers with 1% strained AlGaInAs MQWs, which is the best MBE result in this material system. A single facet pulsed power ...


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Educational Resources on Digital alloys

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eLearning

Characteristics of laminated alloy films heads for high frequency recording

K. Saito IEEE Transactions on Magnetics, 1990

Excellent performance of laminated Fe-Si-Al alloy film heads is demonstrated in applications to high-definition VCR and to digital recording. It is emphasized that these results are derived not only from the ring-shaped core geometry but also from the isotropic behavior in the magnetic properties of the sputtered Fe-Si-Al alloy films. The experimental results on the isotropic magnetic behavior are summarized. ...


Fabrication of 1.55 &mu;m In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.53</sub>(Ga<sub>0.6</sub>Al<sub>0.4</sub>)<sub>0.47</sub>As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

Jae Su Yu; Jin Dong Song; Jong Min Kim; Seong Ju Bae; Yong Tak Lee Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002

We fabricated MBE-grown InGaAs/InGaAlAs SCH MQW ridge-waveguide lasers with InGaAlAs digital alloy layers after post-growth rapid thermal annealing using an SiO2 capping layer. The lasers fabricated on as-grown substrate and annealed substrates were compared by I-V and I-L measurements. The electrical characteristics of the annealed lasers were not degraded by the annealing process compared to those of as-grown lasers. The ...


Modulated beam growth and interface control in III-AsSb laser heterostructures

R. Kaspi; A. P. Ongstad; G. C. Dente; M. Weimer International Conference on Molecular Bean Epitaxy, 2002

The molecular beam epitaxy of advanced heterostructures containing mixed arsenide/ antimonide layers presents a number of special challenges. A 5 /spl mu/m thick laser designed to emit mid-infrared radiation of 4 /spl mu/m wavelength, for example, may incorporate thick (/spl sim/2 /spl mu/m) lattice- matched AlGaAsSb layers for optical confinement, thinner (/spl sim/0.1 /spl mu/m) lattice-matched InGaAsSb layers for electrical ...


Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor

C. R. Bolognesi; J. D. Werking; E. J. Caine; H. Kroemer; E. L. Hu IEEE Electron Device Letters, 1993

High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The ...


1.58-&#x003BC;m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers

G. T. Liu; A. Stintz; E. A. Pease; T. C. Newell; K. J. Malloy; L. F. Lester IEEE Photonics Technology Letters, 2000

A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employed to grow lattice-matched and strained AlGaInAs multiple-quantum well (MQW) 1.58-μm laser diodes on InP. A threshold current density as low as 510 A/cm2 has been demonstrated for broad area lasers with 1% strained AlGaInAs MQWs, which is the best MBE result in this material system. A single facet pulsed power ...


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IEEE-USA E-Books

  • Index

    "As digital data storage technology undergoes enormous change, electrical engineers, physicists, and materials scientists need to keep pace with the materials requirements for recording media. Expert contributors -- together with world-class authorities Richard J. Gambino and Takao Suzuki -- bring you a practical, comprehensive guide to materials design and selection for magneto-optical storage media. This authoritative book explores multilayered thin films, exchanged coupled layers, materials used in current products, and materials of potential interest not yet available in practical applications. A detailed analysis concerning the physics of magneto-optical recording will help you make informed decisions about materials properties. You will also find an extensive discussion of systems and engineering design features for magneto-optical storage devices. This discussion will help you to understand how materials properties impact system performance. You will gain additional insight into this fast-developing field through in-depth coverage of these featured topics: * Rare earth-transition metal amorphous alloys, multilayers, garnets, intermetallic compounds, and ferrites * Basic principles of domain dynamics and recording physics * Latest developments in exchange coupled layers, direct overwrite, and magnetic superresolution * Minidisc, future high-density systems, and DVD format. MAGNETO-OPTICAL RECORDING MATERIALS is essential reading for anyone who needs to keep up-to-date with the latest advances in digital data storage technology."

  • About the Editors

    "As digital data storage technology undergoes enormous change, electrical engineers, physicists, and materials scientists need to keep pace with the materials requirements for recording media. Expert contributors -- together with world-class authorities Richard J. Gambino and Takao Suzuki -- bring you a practical, comprehensive guide to materials design and selection for magneto-optical storage media. This authoritative book explores multilayered thin films, exchanged coupled layers, materials used in current products, and materials of potential interest not yet available in practical applications. A detailed analysis concerning the physics of magneto-optical recording will help you make informed decisions about materials properties. You will also find an extensive discussion of systems and engineering design features for magneto-optical storage devices. This discussion will help you to understand how materials properties impact system performance. You will gain additional insight into this fast-developing field through in-depth coverage of these featured topics: * Rare earth-transition metal amorphous alloys, multilayers, garnets, intermetallic compounds, and ferrites * Basic principles of domain dynamics and recording physics * Latest developments in exchange coupled layers, direct overwrite, and magnetic superresolution * Minidisc, future high-density systems, and DVD format. MAGNETO-OPTICAL RECORDING MATERIALS is essential reading for anyone who needs to keep up-to-date with the latest advances in digital data storage technology."



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