Conferences related to Digital alloys

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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)

This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.



Periodicals related to Digital alloys

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Digital alloys

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Modulated beam growth and interface control in III-AsSb laser heterostructures

Kaspi, R.; Ongstad, A.P.; Dente, G.C.; Weimer, M. Molecular Beam Epitaxy, 2002 International Conference on, 2002

The molecular beam epitaxy of advanced heterostructures containing mixed arsenide/ antimonide layers presents a number of special challenges. A 5 /spl mu/m thick laser designed to emit mid-infrared radiation of 4 /spl mu/m wavelength, for example, may incorporate thick (/spl sim/2 /spl mu/m) lattice- matched AlGaAsSb layers for optical confinement, thinner (/spl sim/0.1 /spl mu/m) lattice-matched InGaAsSb layers for electrical ...


Microlens-integrated vertical-cavity surface-emitting lasers for large-tolerant fiber optic coupling

Song, Young Min; Ki Soo Chang; Lee, Yong Tak ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007, 2007

We have fabricated microlens-integrated vertical-cavity surface-emitting lasers (VCSELs) by selective oxidation of composition-graded digital alloy AlGaAs. Microlens-integrated VCSELs with self-aligned structure was fabricated using standard VCSEL processing without additional process steps, due to the simultaneous formation of a microlens and oxide aperture. The output beam from the oxide-buried and oxide-removed AlGaAs microlens-integrated VCSELs has a beam radius of 3.7 mum ...


Improvement of the high-temperature characteristics of 1.52 &mu;m InGaAs laser with (InAlAs)<sub>0.4</sub>(InGaAs)<sub>0.6</sub> short-period superlattice barriers

Heo, D.; Song, J.D.; Choi, W.J.; Lee, J.I.; Lee, Y.T.; Jeong, J.; Han, I.K. Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on, 2003

A high-temperature characteristics of 1.52 μm InGaAs ridge waveguide laser diode (LD) with InGaAs/InAlAs short period superlattices (SPSs) barriers is reported. The SPSs are grown by digital-alloy molecular beam epitaxy (MBE). There have been similar studies at the 0.98 μm LD using GaAs/AlGaAs SPSs barrier (T0=300 K) and 1.3 μm InGaAsP LD using (InGaAsP)4/(InP)5 SPSs barrier (T0=90 K). On the ...


Design and Fabrication of 1.35-<formula formulatype="inline"> \mu{\rm m} </formula> Laser Diodes With Full Digital-Alloy InGaAlAs MQW

Duchang Heo; Jin Dong Song; Il Ki Han; Won Jun Choi; Yong Tak Lee Quantum Electronics, IEEE Journal of, 2013

We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained ...


Room Temperature CW Operation of Antimonide MQW Laser Diodes beyond 3 &#x003BC;m

Lin, C.; Grau, M.; Amann, M.-C. Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on, 2006

Room temperature continuous wave operation of AlGaAsSb/GalnAsSb MQW diode lasers emitting beyond 3 μm were demonstrated. To increase the valence band offset of the quantum wells, AlGalnAsSb digital alloy was introduced as barriers in the active region. Pulsed mode operation at 3.25 μm up to 50°C has been achieved.


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Educational Resources on Digital alloys

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eLearning

Modulated beam growth and interface control in III-AsSb laser heterostructures

Kaspi, R.; Ongstad, A.P.; Dente, G.C.; Weimer, M. Molecular Beam Epitaxy, 2002 International Conference on, 2002

The molecular beam epitaxy of advanced heterostructures containing mixed arsenide/ antimonide layers presents a number of special challenges. A 5 /spl mu/m thick laser designed to emit mid-infrared radiation of 4 /spl mu/m wavelength, for example, may incorporate thick (/spl sim/2 /spl mu/m) lattice- matched AlGaAsSb layers for optical confinement, thinner (/spl sim/0.1 /spl mu/m) lattice-matched InGaAsSb layers for electrical ...


Microlens-integrated vertical-cavity surface-emitting lasers for large-tolerant fiber optic coupling

Song, Young Min; Ki Soo Chang; Lee, Yong Tak ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007, 2007

We have fabricated microlens-integrated vertical-cavity surface-emitting lasers (VCSELs) by selective oxidation of composition-graded digital alloy AlGaAs. Microlens-integrated VCSELs with self-aligned structure was fabricated using standard VCSEL processing without additional process steps, due to the simultaneous formation of a microlens and oxide aperture. The output beam from the oxide-buried and oxide-removed AlGaAs microlens-integrated VCSELs has a beam radius of 3.7 mum ...


Improvement of the high-temperature characteristics of 1.52 &mu;m InGaAs laser with (InAlAs)<sub>0.4</sub>(InGaAs)<sub>0.6</sub> short-period superlattice barriers

Heo, D.; Song, J.D.; Choi, W.J.; Lee, J.I.; Lee, Y.T.; Jeong, J.; Han, I.K. Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on, 2003

A high-temperature characteristics of 1.52 μm InGaAs ridge waveguide laser diode (LD) with InGaAs/InAlAs short period superlattices (SPSs) barriers is reported. The SPSs are grown by digital-alloy molecular beam epitaxy (MBE). There have been similar studies at the 0.98 μm LD using GaAs/AlGaAs SPSs barrier (T0=300 K) and 1.3 μm InGaAsP LD using (InGaAsP)4/(InP)5 SPSs barrier (T0=90 K). On the ...


Design and Fabrication of 1.35-<formula formulatype="inline"> \mu{\rm m} </formula> Laser Diodes With Full Digital-Alloy InGaAlAs MQW

Duchang Heo; Jin Dong Song; Il Ki Han; Won Jun Choi; Yong Tak Lee Quantum Electronics, IEEE Journal of, 2013

We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained ...


Room Temperature CW Operation of Antimonide MQW Laser Diodes beyond 3 &#x003BC;m

Lin, C.; Grau, M.; Amann, M.-C. Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on, 2006

Room temperature continuous wave operation of AlGaAsSb/GalnAsSb MQW diode lasers emitting beyond 3 μm were demonstrated. To increase the valence band offset of the quantum wells, AlGalnAsSb digital alloy was introduced as barriers in the active region. Pulsed mode operation at 3.25 μm up to 50°C has been achieved.


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