64 resources related to Digital alloys
- Topics related to Digital alloys
- IEEE Organizations related to Digital alloys
- Conferences related to Digital alloys
- Periodicals related to Digital alloys
- Most published Xplore authors for Digital alloys
2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)
This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.
Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths
Bolognesi, C.R.; Werking, J.D.; Caine, E.J.; Kroemer, H.; Hu, E.L. Electron Device Letters, IEEE, 1993
High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The ...
Song, Young Min; Ki Soo Chang; Lee, Yong Tak ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007, 2007
We have fabricated microlens-integrated vertical-cavity surface-emitting lasers (VCSELs) by selective oxidation of composition-graded digital alloy AlGaAs. Microlens-integrated VCSELs with self-aligned structure was fabricated using standard VCSEL processing without additional process steps, due to the simultaneous formation of a microlens and oxide aperture. The output beam from the oxide-buried and oxide-removed AlGaAs microlens-integrated VCSELs has a beam radius of 3.7 mum ...
Heo, D.; Song, J.D.; Choi, W.J.; Lee, J.I.; Lee, Y.T.; Jeong, J.; Han, I.K. Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on, 2003
A high-temperature characteristics of 1.52 μm InGaAs ridge waveguide laser diode (LD) with InGaAs/InAlAs short period superlattices (SPSs) barriers is reported. The SPSs are grown by digital-alloy molecular beam epitaxy (MBE). There have been similar studies at the 0.98 μm LD using GaAs/AlGaAs SPSs barrier (T0=300 K) and 1.3 μm InGaAsP LD using (InGaAsP)4/(InP)5 SPSs barrier (T0=90 K). On the ...
Roberts, J.M.; Harris, J.J.; Hopkinson, M.; Roberts, C. Electron Devices Meeting, 1996., IEEE Hong Kong, 1996
A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation
Duchang Heo; Jin Dong Song; Il Ki Han; Won Jun Choi; Yong Tak Lee Quantum Electronics, IEEE Journal of, 2013
We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained ...
The Josephson Effect: Josephson Digital Electronics in the Soviet Union
EMBC 2012 Plenary Speaker: Dr. Eric Topol
Maker Faire 2008: Spectrum's Digital Clock Contest Winner
Yamaha's Avant Grand Digital Piano Mimics Acoustic
APEC Speaker Highlights: Robert White, Chief Engineer, Embedded Power
Analog to Digital Types
Analog to Digital Traits
ASC-2014 SQUIDs 50th Anniversary: 1 of 6 Arnold Silver
Bell Labs Milestone Ceremony: Multimedia Signal Processing Past Present & Future
Geo-Referenced 3D Reconstruction: Fusing Public Geographic Data and Aerial Imagery
MicroApps: Flexible Digital Modulation Testing for Satellite Regenerative Payloads (Agilent Technologies)
Digital Signal Processing for Envelope Tracking Systems
Co-design of Power Amplifier and Dynamic Power Supplies for Radar and Communications Transmitters
IMS 2012 Microapps - Simulating an NXP Doherty Power Amplifier with Digital Pre-Distortion
IEEE Top Trends for 2012 at CES: Metadata Automatically Organizes Digital Content
Trends in Signal Processing Applications and Industry Technology
2011 IEEE/RSE Wolfson James Clerk Maxwell Award - Marcian E. Hoff
IMS 2011 Microapps - Digital Radio Testing Using an RF Channel Replicator
APEC 2011-Intersil Promo Apec 2011
No standards are currently tagged "Digital alloys"