Conferences related to Digital alloys

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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)

This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.



Periodicals related to Digital alloys

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Digital alloys

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Microlens fabrication by selective oxidation of composition-graded digital alloy AlGaAs

Ki Soo Chang; Young Min Song; Yong Tak Lee Photonics Technology Letters, IEEE, 2006

We have fabricated refractive microlenses using selective oxidation of composition-graded digital alloy AlGaAs. The chirped short period superlattice of GaAs-AlAs was used to grade the composition of AlGaAs along the growth direction for a reproducible and controllable composition and oxidation profile. The oxidized profile of linearly composition-graded digital alloy AlGaAs shows a circular convex lens shape. The focused spot pattern ...


High power SAW filter with new Al-Sc-Cu/Ti/Al-Sc-Cu/Ti electrodes

Takayama, R.; Furukawa, M.; Murashima, Y.; Sakuragawa, T.; Yuda, N.; Nomura, K. Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE, 1998

High power SAW filters using newly developed Al-Sc-Cu/Ti/Al-Sc-Cu/Ti electrodes have been successfully achieved. The thickness of this new film can be controlled during the deposition process as easily as when using conventional Al-Cu alloy film, and this film can be formed into Inter Digital Transducer (IDT) electrodes using conventional Reactive Ion Etching (RIE). We evaluated the power durability of receiver ...


Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor

Bolognesi, C.R.; Werking, J.D.; Caine, E.J.; Kroemer, H.; Hu, E.L. Electron Device Letters, IEEE, 1993

High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The ...


Low-resistance Ohmic contacts to digital alloys of n-AlGaN/AlN

Yun, J.; Choi, K.; Mathur, K.; Kuryatkov, V.; Borisov, B.; Kipshidze, G.; Nikishin, S.; Temkin, H. Electron Device Letters, IEEE, 2006

Low contact resistance to digital alloys of n-type AlGaN/AlN with high average Al concentration is described. Low-energy electron diffraction was used to evaluate surface precleaning with HCl and buffered HF. The contact metallization consisting of a stack of Ti/Al/Ti/Au, 20/100/45/60 nm in thickness, was e-beam deposited and etch-patterned. The lowest specific contact resistance of 5.6×10-5 Ω*cm2 was obtained after annealing ...


A comparison of ∂-doped quantum well structures for power FET applications

Roberts, J.M.; Harris, J.J.; Hopkinson, M.; Roberts, C. Electron Devices Meeting, 1996., IEEE Hong Kong, 1996

A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation


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