37 resources related to Digital alloys
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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)
This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.
Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths
Regrowth of high-quality <equation><font face='verdana'>Al</font><sub>0.3</sub><font face='verdana'>Ga</font><sub>0.7</sub><font face='verdana'>As/GaAs</font></equation> superlattices on laterally oxidized digital <equation><font face='verdana'>Al</font><sub>x</sub><font face='verdana'>Ga</font><sub>1-x</sub><font face='verdana'>As</font></equation> <equation>(x≫0.80)</equation> alloys
Pickrell, G.W.; Chang, K.L.; Epple, J.H.; Hsieh, K.C.; Cheng, K.Y. Journal of Applied Physics, 2002
Digital AlxGa1-xAs alloys consisting of a repeated structure of alternating layers of AlAs and GaAs were grown between layers of GaAs. Lateral oxidation characteristics of these digital AlxGa1-xAs (x≫0.8) alloys were determined. Decreasing aluminum compositions resulted in slower oxidation rates, similar to true AlxGa1-xAs alloys. Further investigations of the oxidation characteristics of a digital Al0.98Ga0.02As alloy indicate that shorter periods ...
Yun, J.; Choi, K.; Mathur, K.; Kuryatkov, V.; Borisov, B.; Kipshidze, G.; Nikishin, S.; Temkin, H. Electron Device Letters, IEEE, 2006
Low contact resistance to digital alloys of n-type AlGaN/AlN with high average Al concentration is described. Low-energy electron diffraction was used to evaluate surface precleaning with HCl and buffered HF. The contact metallization consisting of a stack of Ti/Al/Ti/Au, 20/100/45/60 nm in thickness, was e-beam deposited and etch-patterned. The lowest specific contact resistance of 5.6×10-5 Ω*cm2 was obtained after annealing ...
Saito, K. Magnetics, IEEE Transactions on, 1990
Excellent performance of laminated Fe-Si-Al alloy film heads is demonstrated in applications to high-definition VCR and to digital recording. It is emphasized that these results are derived not only from the ring-shaped core geometry but also from the isotropic behavior in the magnetic properties of the sputtered Fe-Si-Al alloy films. The experimental results on the isotropic magnetic behavior are summarized. ...
Liu, G.T.; Stintz, A.; Pease, E.A.; Newell, T.C.; Malloy, K.J.; Lester, L.F. Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE, 1998
We present the first lattice-matched InGaAs quantum well lasers with barriers and waveguide grown using a digital alloy MBE technique. By rapidly switching the ternaries of AlInAs and InGaAs, the digital alloy process permits the growth of any quaternary AlGaInAs composition
Soo, Y.L.; Kioseoglou, G.; Kim, S.; Chen, X.; Luo, H.; Kao, Y.H.; Sasaki, Y.; Liu, X.; Furdyna, J.K. Applied Physics Letters, 2002
Local structure and effective chemical valency of Mn atoms in Mn/GaAs digital alloys have been investigated using the x-ray absorption fine structure techniques. The samples were prepared by molecular-beam epitaxy with different thickness of GaAs layers separating the nominal Mn monolayers. Lattice constants of the digital alloys are found by x-ray diffraction to increase linearly in a very narrow range ...
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ComSoc Digital Library
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