Conferences related to Digital alloys

Back to Top

2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)

This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.



Periodicals related to Digital alloys

Back to Top

Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Digital alloys

Back to Top

Improvement of the high-temperature characteristics of 1.52 &mu;m InGaAs laser with (InAlAs)<sub>0.4</sub>(InGaAs)<sub>0.6</sub> short-period superlattice barriers

D. Heo; J. D. Song; W. J. Choi; J. I. Lee; Y. T. Lee; J. Jeong; I. K. Han Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on, 2003

A high-temperature characteristics of 1.52 μm InGaAs ridge waveguide laser diode (LD) with InGaAs/InAlAs short period superlattices (SPSs) barriers is reported. The SPSs are grown by digital-alloy molecular beam epitaxy (MBE). There have been similar studies at the 0.98 μm LD using GaAs/AlGaAs SPSs barrier (T0=300 K) and 1.3 μm InGaAsP LD using (InGaAsP)4/(InP)5 SPSs barrier (T0=90 K). On the ...


Room Temperature CW Operation of Antimonide MQW Laser Diodes beyond 3 &#x003BC;m

C. Lin; M. Grau; M. -C. Amann 2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006

Room temperature continuous wave operation of AlGaAsSb/GalnAsSb MQW diode lasers emitting beyond 3 μm were demonstrated. To increase the valence band offset of the quantum wells, AlGalnAsSb digital alloy was introduced as barriers in the active region. Pulsed mode operation at 3.25 μm up to 50°C has been achieved.


Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs

Kyle H. Montgomery; Samarth Agarwal; Gerhard Klimeck; Jerry M. Woodall Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE, 2009

Solar cells tuned for high energy photon absorption and light emitting diodes tuned for true green wavelength emission are proposed using the ZnSe/GaAs (001) superlattice. The effective band gap of this superlattice as a function of monolayers of ZnSe and GaAs within the range of 1.5 to 2.3 eV is shown. A discussion is given on the application of this ...


A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 /spl mu/m lasers

A. J. Spring Thorpe; M. Extavour; E. M. Griswold; A. Shen; J. K. White; K. Hinzer Molecular Beam Epitaxy, 2002 International Conference on, 2002

As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3 /spl mu/m, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range 470 to 585/spl deg/C. Deposition of both digital and bulk alloy layers was carried out in a ...


Fabrication of 1.55 &mu;m In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.53</sub>(Ga<sub>0.6</sub>Al<sub>0.4</sub>)<sub>0.47</sub>As SCH MQW laser with InGaAlAs digital alloy by post-growth rapid thermal annealing using dielectric capping layers

Jae Su Yu; Jin Dong Song; Jong Min Kim; Seong Ju Bae; Yong Tak Lee Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th, 2002

We fabricated MBE-grown InGaAs/InGaAlAs SCH MQW ridge-waveguide lasers with InGaAlAs digital alloy layers after post-growth rapid thermal annealing using an SiO2 capping layer. The lasers fabricated on as-grown substrate and annealed substrates were compared by I-V and I-L measurements. The electrical characteristics of the annealed lasers were not degraded by the annealing process compared to those of as-grown lasers. The ...


More Xplore Articles

Educational Resources on Digital alloys

Back to Top

eLearning

A comparison of &part;-doped quantum well structures for power FET applications

Electron Devices Meeting, 1996., IEEE Hong Kong, 1996

A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation


Improvement of the high-temperature characteristics of 1.52 &mu;m InGaAs laser with (InAlAs)<sub>0.4</sub>(InGaAs)<sub>0.6</sub> short-period superlattice barriers

Lasers and Electro-Optics, 2003. CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on, 2003

A high-temperature characteristics of 1.52 μm InGaAs ridge waveguide laser diode (LD) with InGaAs/InAlAs short period superlattices (SPSs) barriers is reported. The SPSs are grown by digital-alloy molecular beam epitaxy (MBE). There have been similar studies at the 0.98 μm LD using GaAs/AlGaAs SPSs barrier (T0=300 K) and 1.3 μm InGaAsP LD using (InGaAsP)4/(InP)5 SPSs barrier (T0=90 K). On the ...


Microlens-integrated vertical-cavity surface-emitting lasers for large-tolerant fiber optic coupling

ICTON Mediterranean Winter Conference, 2007. ICTON-MW 2007, 2007

We have fabricated microlens-integrated vertical-cavity surface-emitting lasers (VCSELs) by selective oxidation of composition-graded digital alloy AlGaAs. Microlens-integrated VCSELs with self-aligned structure was fabricated using standard VCSEL processing without additional process steps, due to the simultaneous formation of a microlens and oxide aperture. The output beam from the oxide-buried and oxide-removed AlGaAs microlens-integrated VCSELs has a beam radius of 3.7 mum ...


Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs

Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE, 2009

Solar cells tuned for high energy photon absorption and light emitting diodes tuned for true green wavelength emission are proposed using the ZnSe/GaAs (001) superlattice. The effective band gap of this superlattice as a function of monolayers of ZnSe and GaAs within the range of 1.5 to 2.3 eV is shown. A discussion is given on the application of this ...


Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor

Electron Device Letters, IEEE, 1993

High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The ...


More eLearning Resources

IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Digital alloys"

IEEE-USA E-Books

No IEEE-USA E-Books are currently tagged "Digital alloys"



Standards related to Digital alloys

Back to Top

No standards are currently tagged "Digital alloys"


Jobs related to Digital alloys

Back to Top