Conferences related to Digital alloys

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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)

This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.


2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)

Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.

  • 2011 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from every sector in the nanotechnology research field, with a special focus on materials and devices.

  • 2010 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.

  • 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC)

    NMDC aims to develop critical assessment of existing work and future directions in nanotechnology research including nanomaterials and fabrications, nanoelectronics, nanophotonics, devices, and integration. This conference will bring together key researchers from all over the world and from every sector of academy and industry in the nanotechnology research field, with a special focus on materials and devices.



Periodicals related to Digital alloys

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.


Photonics Technology Letters, IEEE

Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.


Quantum Electronics, IEEE Journal of

Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths




Xplore Articles related to Digital alloys

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Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor

Bolognesi, C.R.; Werking, J.D.; Caine, E.J.; Kroemer, H.; Hu, E.L. Electron Device Letters, IEEE, 1993

High-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFETs) fabricated using a standard mesa process are demonstrated. Current gain cutoff frequencies f/sub T/ of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6- mu m gate length and a 3- mu m source-to-drain separation. A significant output conductance depressed f/sub max/ to 40 GHz. The ...


A comparison of ∂-doped quantum well structures for power FET applications

Roberts, J.M.; Harris, J.J.; Hopkinson, M.; Roberts, C. Electron Devices Meeting, 1996., IEEE Hong Kong, 1996

A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation


1.5-/spl mu/m AlGaInAs quantum well lasers grown by the digital alloy technique

Newell, T.C.; Varangis, P.; Pease, E.; Liu, G.T.; Stintz, A.; Malloy, K.; Lester, L.F. Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on, 2000

Summary form only given.1.5-/spl mu/m lasers are of particular interest since this wavelength enjoys the dual role of being optimum for fiber optics and the lowest that is considered eye-safe. Our investigations are focussed on digital alloy (DA) MBE grown lattice matched and strained AlGaInAs multiquantum well lasers. The DA method reduces many growth complexities associated with quaternary materials. The ...


The computer-aided design and rapid prototyping fabrication of removable partial denture framework

Yan Guo-Dong; Liao Wen-He; Ning Dai; Yang Leilei; Gao Yi-Guo; Zhu Shen-Yang; Cai Yu-Hui Computer Science and Information Technology, 2009. ICCSIT 2009. 2nd IEEE International Conference on, 2009

This paper investigated the feasibility to design and fabricate a sacrificial pattern for a removable partial denture (RPD) metal alloy framework with computer-aided design (CAD) and rapid prototyping (RP) technologies. A plaster cast of a patient was digitally scanned with an optical scanner and the captured surface data were imported to three-dimensional (3-D) softwares, which were then used to preprocess ...


Design and Fabrication of 1.35-<formula formulatype="inline"> \mu{\rm m} </formula> Laser Diodes With Full Digital-Alloy InGaAlAs MQW

Duchang Heo; Jin Dong Song; Il Ki Han; Won Jun Choi; Yong Tak Lee Quantum Electronics, IEEE Journal of, 2013

We report full digital-alloy In(Ga1-zAlz)As/InP multiple-quantum well 1.35-μm laser diodes using molecular beam epitaxy. The wells and barriers consist of five pairs of InGaAs/InAlAs (1.5 nm/0.375 nm) and four pairs of InGaAs/InAlAs (0.66 nm/0.98 nm). The separate confinement layer consists of two 60 pairs of InGaAs/InAlAs (0.66 nm/0.98 nm) and makes for an optical confinement factor of 7.07%. We obtained ...


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