64 resources related to Digital alloys
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2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD)
This conference is organized biannually and provides a forum for Australian and international semiconductor communities to meet and discuss topics related to microelectronic and optoelectronic materials, processes and devices.
2012 IEEE 7th Nanotechnology Materials and Devices Conference (NMDC)
Graphene and Nanotube Based Materials and Devices; MEMS/NEMS for Bio-Nanotechnology; Characterization and Simulation of Nanomaterials and Nanostructures; Materials and Devices for Nanoelectronics, Nano-Optics; Materials and Devices for Energy and Environmental Applications.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
Rapid publication of original research relevant to photonics technology. This expanding field emphasizes laser and electro-optic technology, laser physics and systems, applications, and photonic/ lightwave components and applications. The journal offers short, archival publication with minimal delay.
Generation, amplification, modulation, detection, waveguiding, or techniques and effects that can affect the propagation characteristics of coherent electromagnetic radiation having submillimeter and shorter wavelengths
Spring Thorpe, A.J.; Extavour, M.; Griswold, E.M.; Shen, A.; White, J.K.; Hinzer, K. Molecular Beam Epitaxy, 2002 International Conference on, 2002
As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3 /spl mu/m, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range 470 to 585/spl deg/C. Deposition of both digital and bulk alloy layers was carried out in a ...
Sakabe, S.; Mori, N.; Sato, K.; Miyake, Y.; Tanaka, A. Power Engineering Review, IEEE, 1981
Summary form only given, as follows.
Duchang Heo; Song, J.D.; Han, I.K.; Yang, K.; Kim, J.; Jeon, S. Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on, 2013
To fully understand optical properties of digital-alloy (InGaAs)1-z(InAlAs)z grown on InP by MBE, we theoretically calculate the emission energies of digital-alloy (InGaAs)1-z(InAlAs)z using 4×4 k*p Hamiltonian and compare them with photoluminescence data.
Saito, K. Magnetics, IEEE Transactions on, 1990
Excellent performance of laminated Fe-Si-Al alloy film heads is demonstrated in applications to high-definition VCR and to digital recording. It is emphasized that these results are derived not only from the ring-shaped core geometry but also from the isotropic behavior in the magnetic properties of the sputtered Fe-Si-Al alloy films. The experimental results on the isotropic magnetic behavior are summarized. ...
Roberts, J.M.; Harris, J.J.; Hopkinson, M.; Roberts, C. Electron Devices Meeting, 1996., IEEE Hong Kong, 1996
A systematic study of the effects of material composition and Si ∂-doping plane position on the transport properties of several ∂-doped GaAs/AlGaAs and InGaAs/InP quantum well (QW) structures is presented. The intention is to determine the design rules for a high carrier concentration, high mobility structures suitable for high frequency power FET applications such as microwave generation
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