Conferences related to Dielectric constant

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2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

  • 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2016 IEEE 66th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

    Premier components, packaging and technology

  • 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2010 IEEE 60th Electronic Components and Technology Conference (ECTC 2010)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009)

    Advanced packaging, electronic components & RF, emerging technologies, materials & processing, manufacturing technology, interconnections, quality & reliability, modeling & simulation, optoelectronics.

  • 2008 IEEE 58th Electronic Components and Technology Conference (ECTC 2008)

  • 2007 IEEE 57th Electronic Components and Technology Conference (ECTC 2007)

  • 2006 IEEE 56th Electronic Components and Technology Conference (ECTC 2006)

  • 2005 IEEE 55th Electronic Components and Technology Conference (ECTC 2005)


IGARSS 2015 - 2015 IEEE International Geoscience and Remote Sensing Symposium

The Geoscience and Remote Sensing Society (GRSS) seeks to advance science and technology in geoscience, remote sensing and related fields using conferences, education and other resources. Its fields of interest are the theory, concepts and techniques of science and engineering as they apply to the remote sensing of the earth, oceans, atmosphere, and space, as well as the processing, interpretation and dissemination of this information.


2014 IEEE 45th Semiconductor Interface Specialists Conference (SISC)

The SISC provides a unique forum for device engineers, solid-state physicists, and materials scientists to discuss issues of common interest. Principal topics for discussion at SISC are semiconductor/insulator interfaces, the physics of insulating thin films, and the interaction among materials science, device physics, and state-of-the-art technology.

  • 2013 IEEE 44th Semiconductor Interface Specialists Conference (SISC)

    The conference emphasis is on silicon-based and compound semiconductor devices, and topics evolve with the state-of-the-art.

  • 2012 IEEE 43rd Semiconductor Interface Specialists Conference (SISC)

    SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists and materials scientists to discuss topics related to semiconductor/oxide interfaces for current and future logic and memory devices. The conference includes invited and contributed talks, as well as a poster presentation session.

  • 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC)

    Interfaces of Insulators on Semiconductors, for CMOS


2014 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to: Measurement Science & Education, Measurement Systems, Measurement Data Acquisition, Measurements of Physical Quantities, and Measurement Applications.

  • 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2012 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The conference focuses on research, development and applications in the field of instrumentation and measurement science and technology. The list of program topics includes but is not limited to Fundamentals, Sensors & Transducers, Measurements of Physical Qualities, Measurement Systems, Measurement Applications, Signal & Image Processing, and Industrial Applications.

  • 2011 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2010 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2010

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2009 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2009

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT-DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2008 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2008

    The conference focuses on all aspects of instrumentation and measurement science and technology - research, development and applications. The list of program topics includes but is not limited to measurement science & education, measurement systems, measurement data acquisition, measurements of physical quantities, and measurement applications.

  • 2007 IEEE Instrumentation & Measurement Technology Conference - IMTC 2007

  • 2006 IEEE Instrumentation & Measurement Technology Conference - IMTC 2006

  • 2005 IEEE Instrumentation & Measurement Technology Conference - IMTC 2005


2012 4th Electronic System-Integration Technology Conference (ESTC)

The premier global European event that brings together key researchers, innovators, decision-makers, technologists, businesses, and professional associations working in interconnect and packaging technologies for electronic system integration in order to present, demonstrate, and discuss the latest developments in assembly and interconnection technology and new innovative applications.


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Periodicals related to Dielectric constant

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Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Geoscience and Remote Sensing, IEEE Transactions on

Theory, concepts, and techniques of science and engineering as applied to sensing the earth, oceans, atmosphere, and space; and the processing, interpretation, and dissemination of this information.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.


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Most published Xplore authors for Dielectric constant

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Xplore Articles related to Dielectric constant

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High-Throughput Screening of Amorphous <formula formulatype="inline"><tex Notation="TeX">$hbox{Y}_{2} hbox{O}_{3}$</tex></formula>&#x2013;<formula formulatype="inline"><tex Notation="TeX">$hbox{TiO}_{2}hbox{/}hbox{SiO}_{2}$</tex> </formula> Higher <formula formulatype="inline"><tex Notation="TeX">$kappa$</tex></formula> Gate Dielectric Layers

Kao-Shuo Chang; Martin L. Green; Peter K. Schenck; Igor Levin; Eswaranand Venkatasubramanian IEEE Transactions on Electron Devices, 2012

In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3-TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution ...


Compositional study of PLZT rainbow ceramics for piezo actuators

G. H. Haertling Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics, 1994

On-going studies have shown that the PLZT I compositional system is one which yields materials possessing some of the highest coefficients for piezoelectric and electrostrictive actuators. It has also been found that PLZT ceramics are near ideal for achieving the ultra-high displacements recently reported for the Rainbow (Reduced and INternally Biased Oxide Wafer) actuators. In order to determine the optimum ...


New approach to electronic band gap filtering structures combining microstrip and dielectric resonators

Bahareh. Moradi; Ursula. Martinez-Iranzo; Oriol. Ymbern; Cynthia. Martinez; Julian Alonso; Joan Garcia-Garcia 2013 Asia-Pacific Microwave Conference Proceedings (APMC), 2013

A novel design combining standard microstrip technology with single ring resonator and high dielectric constant resonator for design of low and band pass filtering electromagnetic band gap(EBG) structures, operating in the range from 1 to 20 GHz is presented in this paper. The design is based on a high dielectric constant resonator embedded in a microstrip structure substrate. The dielectric ...


Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)

R. Yahyazadeh; Z. Hashempour 2010 27th International Conference on Microelectronics Proceedings, 2010

An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in HEMTs has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition ...


Effect of sintering temperature on dielectric properties of tungsten doped barium titanate

Sheela Devi; Sameer Jain; A. K. Jha 2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008

In the present work, samples of compositions BaTi1??xWxO3; x= 0.00 and 0.15 were synthesized by solid-state reaction technique at various sintering temperatures of 1200??C, 1250??C and 1300??C and durations 2hr and 5hr. The X- ray diffractograms analyses reveal the formation of the samples having single phase crystalline structure. Tetragonal strain of the samples has been calculated and its variations with ...


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Educational Resources on Dielectric constant

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eLearning

High-Throughput Screening of Amorphous <formula formulatype="inline"><tex Notation="TeX">$hbox{Y}_{2} hbox{O}_{3}$</tex></formula>&#x2013;<formula formulatype="inline"><tex Notation="TeX">$hbox{TiO}_{2}hbox{/}hbox{SiO}_{2}$</tex> </formula> Higher <formula formulatype="inline"><tex Notation="TeX">$kappa$</tex></formula> Gate Dielectric Layers

Kao-Shuo Chang; Martin L. Green; Peter K. Schenck; Igor Levin; Eswaranand Venkatasubramanian IEEE Transactions on Electron Devices, 2012

In this paper, an approach using native SiO2 to make amorphous higher dielectric constant films based on the Y2O3-TiO2/SiO2/Si compositional spread libraries by combinatorial pulsed laser deposition is reported. The key feature of the experiment is that combinatorial methodology is used to quickly screen the potential high-dielectric-constant films out of a large composition parameter space. Scanning X-ray microdiffractometry and high-resolution ...


Compositional study of PLZT rainbow ceramics for piezo actuators

G. H. Haertling Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics, 1994

On-going studies have shown that the PLZT I compositional system is one which yields materials possessing some of the highest coefficients for piezoelectric and electrostrictive actuators. It has also been found that PLZT ceramics are near ideal for achieving the ultra-high displacements recently reported for the Rainbow (Reduced and INternally Biased Oxide Wafer) actuators. In order to determine the optimum ...


New approach to electronic band gap filtering structures combining microstrip and dielectric resonators

Bahareh. Moradi; Ursula. Martinez-Iranzo; Oriol. Ymbern; Cynthia. Martinez; Julian Alonso; Joan Garcia-Garcia 2013 Asia-Pacific Microwave Conference Proceedings (APMC), 2013

A novel design combining standard microstrip technology with single ring resonator and high dielectric constant resonator for design of low and band pass filtering electromagnetic band gap(EBG) structures, operating in the range from 1 to 20 GHz is presented in this paper. The design is based on a high dielectric constant resonator embedded in a microstrip structure substrate. The dielectric ...


Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)

R. Yahyazadeh; Z. Hashempour 2010 27th International Conference on Microelectronics Proceedings, 2010

An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in HEMTs has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and partially occupied sub-bunds in the interface quantum well. In addition ...


Effect of sintering temperature on dielectric properties of tungsten doped barium titanate

Sheela Devi; Sameer Jain; A. K. Jha 2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008

In the present work, samples of compositions BaTi1??xWxO3; x= 0.00 and 0.15 were synthesized by solid-state reaction technique at various sintering temperatures of 1200??C, 1250??C and 1300??C and durations 2hr and 5hr. The X- ray diffractograms analyses reveal the formation of the samples having single phase crystalline structure. Tetragonal strain of the samples has been calculated and its variations with ...


More eLearning Resources

IEEE-USA E-Books

  • Clock Circuits, Trace Routing, and Terminations

    This chapter contains sections titled: Creating Transmission Lines Within a PCB Topology Configurations Propagation Delay and Dielectric Constant Capacitive Loading of Signal Traces Component Placement Impedance Matching - Reflections and Ringing Calculating Trace Lengths (Electrically Long Traces) Trace Routing Routing Layers Crosstalk Trace Separation and the 3-W Rule Guard/Shunt Traces Trace Termination This chapter contains sections titled: References

  • Surface Waves Everywhere

    By ???surface waves??? one means a special kind of waves that propagate at the interface between two different media. These are certainly the first kind of surface waves that mankind has encountered. The wind can excite water waves with phase velocities that are inferior to the wind velocity. These are electromagnetic waves that exist when the dielectric constant is positive on one side of the interface and negative on the other side. Surface plasma waves can propagate along the interface between media with positive and negative dielectric constant. There exist two distinct situations: an ungated two???dimensional electron gas (2DEG), in a quantum well or heterostructure, and a 2DEG with a metallic gate, like in a field???effect transistors (FETs). In a crystal, the periodic structure of the lattice results in the band structure of the electron energy spectrum and the states are described by Bloch wavefunctions.

  • Pulse Forming Lines

    Many applications require energy to be delivered on faster timescales. In this case, the circuit may consist of a high???voltage generator and a pulse forming transmission line (PFL) controlled by a closing switch. The high???voltage generator, such as a Marx, charges the PFL in microseconds and the output switch discharges the PFL into the load. This chapter provides an insight into mechanisms of transients in the PFLs as well as the equations required for design of various PFL configurations developed to meet specific requirements. It then discusses the salient features of PFL performance parameters such as electrical breakdown, dielectric constant, self???discharge time constant, optimum impedance, charging source, and switching techniques. The coaxial pulse forming line can be used in a transmission line pulser. Blumlein PFL geometry enables the production of an output pulse into a matched load equal to the original charging voltage of the line.

  • Development of TemperatureStable ThickFilm Dielectrics: II. MediumK Dielectric

    A temperature-stable, medium dielectric constant (K = 100) thick-film dielectric is developed for high-temperature electronic instrumentation. A theoreneal model predicts a temperature-insensitive dielectric in the glass- Bi4Ti3O12-SrTiO3 system, while experimental results suggest an optimum composition in the glass-SrTiO3-BaTiO3 system. Interfacial polarization is the major factor which causes the devlatlon. The medium-K dielectric, when properly fired, terminated, and heattreated, can work adequately from 25°C to 400°C.

  • ConductorBacked Coplanar Waveguide

    This chapter presents the characteristics of a coplanar waveguide with a lower ground plane. The lower ground plane provides mechanical strength for a thin and fragile wafer, such as GaAs, and acts as a heat sink for circuits with active devices. This configuration of the CPW is known as the conductor-backed coplanar waveguide (CBCPW). The chapter commences with expressions based on quasi-static analysis for the effective dielectric constant eff and characteristic impedance Z0 of CBCPW with and without a top metal cover. Later sections of the chapter discuss the effect of conducting lateral walls on the dominant mode of the CBCPW and the effect of lateral electric and magnetic walls on the higher order mode propagation constant. A new variant of the CBCPW, namely the channelized coplanar waveguide (CCPW), is also presented.

  • The Impact of a Fringing Field on the Device Performance of a P???Channel Tunnel Field???Effect Transistor with a High????? Gate Dielectric

    This chapter reports a detailed investigation, with the help of extensive device simulations, of the effects of varying the dielectric constant k of the gate dielectric on the device performance of a p???channel tunnel field???effect transistor (p???TFET). It is observed that the fringing field arising from a high???k gate dielectric degrades the device performance of a p???TFET, which is in contrast with that reported for its n???channel counterpart, where the same been found to yield better performance. The impact of the fringing field is found to be larger for a p???TFET with higher source doping. It is also found that the qualitative nature of the impact of the fringing field does not change with dimension scaling. On the other hand, the higher electric field due to increased oxide capacitance is found to be beneficial for a p???TFET when a high???k gate dielectric is used in it, as expected. It is also found that a low???k spacer is beneficial for a p???TFET, similar to that reported for an n???TFET of similar structure.

  • High Temperature Performance of Polymer Film Capacitors

    The development of compact, thermally stable, high energy density, power conditioning capacitors has been identified to be one of the most difficult technological barriers in the design of high temperature electronic systems. High energy density capacitors are made of multiple, very thin layers of high dielectric constant insulating material. However, the polymer insulating films which are mechanically and electrically stable to the highest temperature, such as polyimide and teflon, also have the lowest dielectric constants and are the most difficult to make in very thin layers. This paper presents the collected results of research efforts to characterize and improve the high temperature performance of polymer capacitors. Temperature boundaries and the variation in dielectric properties with temperature and time are identified for a number of these films.

  • One-Dimensional Simulation with the FDTD Method

    This chapter is a step-by-step introduction to the finite-difference time domain (FDTD) method. It begins with the simplest possible problem, the simulation of a pulse propagating in free space in one dimension. This example is used to illustrate the FDTD formulation. Then, it discusses how to determine the time step. An electromagnetic (EM) wave propagating in free space cannot go faster than the speed of light. Absorbing boundary conditions are necessary to keep outgoing E and H fields from being reflected back into the problem space. Normally, in calculating the E field, we need to know the surrounding H values; this is a fundamental assumption of the FDTD method. In order to simulate a medium with a dielectric constant other than 1, which corresponds to free space, we have to add the relative dielectric constant to Maxwell's equations. Subsequent sections lead to formulations for more complicated media.

  • Coplanar Waveguide with FiniteWidth Ground Planes

    This chapter looks at the characteristics of a conventional coplanar waveguide (CPW) and a conductor-backed coplanar waveguide (CBCPW) with finite-width top ground planes. Analytical expressions to determine the effective dielectric constant eff and characteristic impedance Z0 of a CPW with finite-width ground planes (FW-CPW) supported on a multilayer dielectric substrate are presented. A qualitative discussion of the modes that are supported by a conductor-backed CPW with top ground planes of finite width (FW-CBCPW) follows. The focus is on the dominant CPW mode and the microstrip-like mode (MSL).

  • Power Distribution Fidelity of Wirebond Compared to FlipChip Devices in Grid Array Packages

    We have simulated the power fidelity of wirebond and flip chip grid array packages suitable for next generation microprocessors. The DC power droop across the chip from resistive losses and the AC power noise from switching events were studied as a function of the number of package power planes, dielectric constant. the number of chip connections, decoupling capacitors and their location.



Standards related to Dielectric constant

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