Conferences related to Dielectric constant

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2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

  • 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2016 IEEE 66th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

    Premier components, packaging and technology

  • 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2010 IEEE 60th Electronic Components and Technology Conference (ECTC 2010)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009)

    Advanced packaging, electronic components & RF, emerging technologies, materials & processing, manufacturing technology, interconnections, quality & reliability, modeling & simulation, optoelectronics.

  • 2008 IEEE 58th Electronic Components and Technology Conference (ECTC 2008)

  • 2007 IEEE 57th Electronic Components and Technology Conference (ECTC 2007)

  • 2006 IEEE 56th Electronic Components and Technology Conference (ECTC 2006)

  • 2005 IEEE 55th Electronic Components and Technology Conference (ECTC 2005)


IGARSS 2015 - 2015 IEEE International Geoscience and Remote Sensing Symposium

The Geoscience and Remote Sensing Society (GRSS) seeks to advance science and technology in geoscience, remote sensing and related fields using conferences, education and other resources. Its fields of interest are the theory, concepts and techniques of science and engineering as they apply to the remote sensing of the earth, oceans, atmosphere, and space, as well as the processing, interpretation and dissemination of this information.


2014 IEEE 45th Semiconductor Interface Specialists Conference (SISC)

The SISC provides a unique forum for device engineers, solid-state physicists, and materials scientists to discuss issues of common interest. Principal topics for discussion at SISC are semiconductor/insulator interfaces, the physics of insulating thin films, and the interaction among materials science, device physics, and state-of-the-art technology.

  • 2013 IEEE 44th Semiconductor Interface Specialists Conference (SISC)

    The conference emphasis is on silicon-based and compound semiconductor devices, and topics evolve with the state-of-the-art.

  • 2012 IEEE 43rd Semiconductor Interface Specialists Conference (SISC)

    SISC is a workshop-style conference that provides a forum for device engineers, solid state physicists and materials scientists to discuss topics related to semiconductor/oxide interfaces for current and future logic and memory devices. The conference includes invited and contributed talks, as well as a poster presentation session.

  • 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC)

    Interfaces of Insulators on Semiconductors, for CMOS


2014 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to: Measurement Science & Education, Measurement Systems, Measurement Data Acquisition, Measurements of Physical Quantities, and Measurement Applications.

  • 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2012 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The conference focuses on research, development and applications in the field of instrumentation and measurement science and technology. The list of program topics includes but is not limited to Fundamentals, Sensors & Transducers, Measurements of Physical Qualities, Measurement Systems, Measurement Applications, Signal & Image Processing, and Industrial Applications.

  • 2011 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2010 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2010

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT -DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2009 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2009

    The Conference focuses on all aspects of instrumentation and measurement science and technology research, development and applications. The list of program topics includes but is not limited to MEASUREMENT SCIENCE & EDUCATION, MEASUREMENT SYSTEMS, MEASUREMENT-DATA ACQUISITION, MEASUREMENTS OF PHYSICAL QUANTITIES, and MEASUREMENT APPLICATIONS.

  • 2008 IEEE Instrumentation & Measurement Technology Conference - I2MTC 2008

    The conference focuses on all aspects of instrumentation and measurement science and technology - research, development and applications. The list of program topics includes but is not limited to measurement science & education, measurement systems, measurement data acquisition, measurements of physical quantities, and measurement applications.

  • 2007 IEEE Instrumentation & Measurement Technology Conference - IMTC 2007

  • 2006 IEEE Instrumentation & Measurement Technology Conference - IMTC 2006

  • 2005 IEEE Instrumentation & Measurement Technology Conference - IMTC 2005


2012 4th Electronic System-Integration Technology Conference (ESTC)

The premier global European event that brings together key researchers, innovators, decision-makers, technologists, businesses, and professional associations working in interconnect and packaging technologies for electronic system integration in order to present, demonstrate, and discuss the latest developments in assembly and interconnection technology and new innovative applications.


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Periodicals related to Dielectric constant

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Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electronics Packaging Manufacturing, IEEE Transactions on

Design for manufacturability, cost and process modeling, process control and automation, factory analysis and improvement, information systems, statistical methods, environmentally-friendly processing, and computer-integrated manufacturing for the production of electronic assemblies, products, and systems.


Geoscience and Remote Sensing, IEEE Transactions on

Theory, concepts, and techniques of science and engineering as applied to sensing the earth, oceans, atmosphere, and space; and the processing, interpretation, and dissemination of this information.


Instrumentation and Measurement, IEEE Transactions on

Measurements and instrumentation utilizing electrical and electronic techniques.


Microwave Theory and Techniques, IEEE Transactions on

Microwave theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of microwaves.



Most published Xplore authors for Dielectric constant

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Xplore Articles related to Dielectric constant

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Microwave Modelling of H. F. Antennas Over Lossy Earth

H. B. Jacard; G. G. Gomez 1981 IEEE MTT-S International Microwave Symposium Digest, 1981

The dielectric constant and loss tangent values of several mixtures of sand, water and salt are measured at 9.3 GHz, in order to investigate the feasibility of microwave modelling of H.F. antennas which operate over imperfectly conducting ground. A particular mixture is used for modelling a monopole antenna over a circular metal disk which is lying on a lossy half- ...


Piezoelectric properties of (K, Na)NbO<inf>3</inf> thin films deposited on (001)SrRuO<inf>3</inf>/Pt/MgO substrates

Takuya Mino; Shuichiro Kuwajima; Takaaki Suzuki; Isaku Kanno; Hidetoshi Kotera; Kiyotaka Wasa 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007

Thin films of Pb-free single crystal (KxNa1-x)NbO3, KNN, were epitaxially grown on (001)SrRuO3 / (001)Pt / (001)MgO substrates by rf-magnetron sputtering. In the pseudo-tetragonal system, c-lattice parameters of the sputtered KNN films were around 1% longer than those of the bulk KNN. The sputtered KNN thin films showed bulk like dielectric properties and/or ferroelectricity. Dielectric constant epsivr spontaneous polarization Ps, ...


Effects of nanofiller loading on the molecular motion and carrier transport in polyamide

Norikazu Fuse; Hiroki Sato; Yoshimichi Ohki; Toshikatsu Tanaka IEEE Transactions on Dielectrics and Electrical Insulation, 2009

Effects of nanofiller loading on the molecular motion and carrier transport in polyamide-6/mica nanocomposites were discussed by analyzing their complex permittivity spectra. As a result, the following four dielectric polarization processes were observed; space charge polarization, interfacial polarization at crystalline/amorphous boundaries, alpha relaxation due to dipolar orientation, and beta relaxation due to rotation of amide groups bonded with water molecules. ...


Evidence of the Influence of Heavy-doping Induced Bandgap Narrowing on the Collector Current of Strained SiGe-base Heterojunction Bipolar Transistors

J. Poortmans; S. C. Jain; M. Caymax; A. Van Ammel; J. Nijs; R. P. Mertens; R. Van Overstraeten ESSDERC '92: 22nd European Solid State Device Research conference, 1992

Based on an analytical approach, developed by Jain and Roulston [1], the different contributions to the bandgap narrowing at T=0K are calculated for highly p-type doped Si and strained Si1-xGex layers for Ge-concentrations between 0 and 30%. The different assumptions will be highlighted with special emphasis on the procedure we used to deal with the non-parabolic aspect of the valence ...


Optimal selection of piezoelectric substrates and crystal cuts for SAW-based pressure and temperature sensors

Xiangwen Zhang; Fei-Yue Wang; Li Li IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2007

In this paper, the perturbation method is used to study the velocity shift of surface acoustic waves (SAW) caused by surface pressure and temperature variations of piezoelectric substrates. Effects of pressures and temperatures on elastic, piezoelectric, and dielectric constants of piezoelectric substrates are fully considered as well as the initial stresses and boundary conditions. First, frequency pressure/temperature coefficients are introduced ...


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Educational Resources on Dielectric constant

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eLearning

Microwave Modelling of H. F. Antennas Over Lossy Earth

H. B. Jacard; G. G. Gomez 1981 IEEE MTT-S International Microwave Symposium Digest, 1981

The dielectric constant and loss tangent values of several mixtures of sand, water and salt are measured at 9.3 GHz, in order to investigate the feasibility of microwave modelling of H.F. antennas which operate over imperfectly conducting ground. A particular mixture is used for modelling a monopole antenna over a circular metal disk which is lying on a lossy half- ...


Piezoelectric properties of (K, Na)NbO<inf>3</inf> thin films deposited on (001)SrRuO<inf>3</inf>/Pt/MgO substrates

Takuya Mino; Shuichiro Kuwajima; Takaaki Suzuki; Isaku Kanno; Hidetoshi Kotera; Kiyotaka Wasa 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics, 2007

Thin films of Pb-free single crystal (KxNa1-x)NbO3, KNN, were epitaxially grown on (001)SrRuO3 / (001)Pt / (001)MgO substrates by rf-magnetron sputtering. In the pseudo-tetragonal system, c-lattice parameters of the sputtered KNN films were around 1% longer than those of the bulk KNN. The sputtered KNN thin films showed bulk like dielectric properties and/or ferroelectricity. Dielectric constant epsivr spontaneous polarization Ps, ...


Effects of nanofiller loading on the molecular motion and carrier transport in polyamide

Norikazu Fuse; Hiroki Sato; Yoshimichi Ohki; Toshikatsu Tanaka IEEE Transactions on Dielectrics and Electrical Insulation, 2009

Effects of nanofiller loading on the molecular motion and carrier transport in polyamide-6/mica nanocomposites were discussed by analyzing their complex permittivity spectra. As a result, the following four dielectric polarization processes were observed; space charge polarization, interfacial polarization at crystalline/amorphous boundaries, alpha relaxation due to dipolar orientation, and beta relaxation due to rotation of amide groups bonded with water molecules. ...


Evidence of the Influence of Heavy-doping Induced Bandgap Narrowing on the Collector Current of Strained SiGe-base Heterojunction Bipolar Transistors

J. Poortmans; S. C. Jain; M. Caymax; A. Van Ammel; J. Nijs; R. P. Mertens; R. Van Overstraeten ESSDERC '92: 22nd European Solid State Device Research conference, 1992

Based on an analytical approach, developed by Jain and Roulston [1], the different contributions to the bandgap narrowing at T=0K are calculated for highly p-type doped Si and strained Si1-xGex layers for Ge-concentrations between 0 and 30%. The different assumptions will be highlighted with special emphasis on the procedure we used to deal with the non-parabolic aspect of the valence ...


Optimal selection of piezoelectric substrates and crystal cuts for SAW-based pressure and temperature sensors

Xiangwen Zhang; Fei-Yue Wang; Li Li IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2007

In this paper, the perturbation method is used to study the velocity shift of surface acoustic waves (SAW) caused by surface pressure and temperature variations of piezoelectric substrates. Effects of pressures and temperatures on elastic, piezoelectric, and dielectric constants of piezoelectric substrates are fully considered as well as the initial stresses and boundary conditions. First, frequency pressure/temperature coefficients are introduced ...


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IEEE-USA E-Books

  • Development of TemperatureStable ThickFilm Dielectrics: II. MediumK Dielectric

    A temperature-stable, medium dielectric constant (K = 100) thick-film dielectric is developed for high-temperature electronic instrumentation. A theoreneal model predicts a temperature-insensitive dielectric in the glass- Bi4Ti3O12-SrTiO3 system, while experimental results suggest an optimum composition in the glass-SrTiO3-BaTiO3 system. Interfacial polarization is the major factor which causes the devlatlon. The medium-K dielectric, when properly fired, terminated, and heattreated, can work adequately from 25°C to 400°C.

  • Transmission Lines

    This chapter contains sections titled: Overview on Transmission Lines Transmission Line Basics Transmission Line Effects Creating Transmission Lines in a Multilayer PCB Relative Permittivity (Dielectric Constant) Routing Topologies Routing Concerns Capacitive Loading References

  • Power Distribution Fidelity of Wirebond Compared to FlipChip Devices in Grid Array Packages

    We have simulated the power fidelity of wirebond and flip chip grid array packages suitable for next generation microprocessors. The DC power droop across the chip from resistive losses and the AC power noise from switching events were studied as a function of the number of package power planes, dielectric constant. the number of chip connections, decoupling capacitors and their location.

  • High Temperature Performance of Polymer Film Capacitors

    The development of compact, thermally stable, high energy density, power conditioning capacitors has been identified to be one of the most difficult technological barriers in the design of high temperature electronic systems. High energy density capacitors are made of multiple, very thin layers of high dielectric constant insulating material. However, the polymer insulating films which are mechanically and electrically stable to the highest temperature, such as polyimide and teflon, also have the lowest dielectric constants and are the most difficult to make in very thin layers. This paper presents the collected results of research efforts to characterize and improve the high temperature performance of polymer capacitors. Temperature boundaries and the variation in dielectric properties with temperature and time are identified for a number of these films.

  • The Impact of a Fringing Field on the Device Performance of a P???Channel Tunnel Field???Effect Transistor with a High????? Gate Dielectric

    This chapter reports a detailed investigation, with the help of extensive device simulations, of the effects of varying the dielectric constant k of the gate dielectric on the device performance of a p???channel tunnel field???effect transistor (p???TFET). It is observed that the fringing field arising from a high???k gate dielectric degrades the device performance of a p???TFET, which is in contrast with that reported for its n???channel counterpart, where the same been found to yield better performance. The impact of the fringing field is found to be larger for a p???TFET with higher source doping. It is also found that the qualitative nature of the impact of the fringing field does not change with dimension scaling. On the other hand, the higher electric field due to increased oxide capacitance is found to be beneficial for a p???TFET when a high???k gate dielectric is used in it, as expected. It is also found that a low???k spacer is beneficial for a p???TFET, similar to that reported for an n???TFET of similar structure.

  • One-Dimensional Simulation with the FDTD Method

    This chapter is a step-by-step introduction to the finite-difference time domain (FDTD) method. It begins with the simplest possible problem, the simulation of a pulse propagating in free space in one dimension. This example is used to illustrate the FDTD formulation. Then, it discusses how to determine the time step. An electromagnetic (EM) wave propagating in free space cannot go faster than the speed of light. Absorbing boundary conditions are necessary to keep outgoing E and H fields from being reflected back into the problem space. Normally, in calculating the E field, we need to know the surrounding H values; this is a fundamental assumption of the FDTD method. In order to simulate a medium with a dielectric constant other than 1, which corresponds to free space, we have to add the relative dielectric constant to Maxwell's equations. Subsequent sections lead to formulations for more complicated media.

  • Coplanar Waveguide with FiniteWidth Ground Planes

    This chapter looks at the characteristics of a conventional coplanar waveguide (CPW) and a conductor-backed coplanar waveguide (CBCPW) with finite-width top ground planes. Analytical expressions to determine the effective dielectric constant eff and characteristic impedance Z0 of a CPW with finite-width ground planes (FW-CPW) supported on a multilayer dielectric substrate are presented. A qualitative discussion of the modes that are supported by a conductor-backed CPW with top ground planes of finite width (FW-CBCPW) follows. The focus is on the dominant CPW mode and the microstrip-like mode (MSL).

  • Plastics and Other Materials

    This chapter contains sections titled: Body fluid permeability Electric loss and dielectric constant Tissue and blood reactions Forming and repair

  • Impact of a Spacer Dielectric and a Gate Overlap/Underlap on the Device Performance of a Tunnel Field???Effect Transistor

    A detailed investigation, with the help of extensive device simulations, of the effects of a spacer dielectric on the device performance of a tunnel field???effect transistor (TFET) is reported in this chapter. The effects of varying the dielectric constant and width of the spacer are studied. It is observed that the use of a low???k dielectric as a spacer causes an improvement in its ON???state current. The device performance is degraded with an increase in the spacer width until a certain value (~30???nm), after which the dependence becomes very weak. The effects of varying the source doping concentration as well as the gate overlap/underlap are also investigated. Higher source doping or a gate???source overlap reduces the spacer dependence of the device characteristics. A gate underlap structure, however, shows an improved performance for a high???k spacer. For a given spacer, although a gate overlap or a relatively large gate underlap degrades the device performance, a small gate underlap shows an improvement in it.

  • Clock Circuits, Trace Routing, and Terminations

    This chapter contains sections titled: Creating Transmission Lines Within a PCB Topology Configurations Propagation Delay and Dielectric Constant Capacitive Loading of Signal Traces Component Placement Impedance Matching - Reflections and Ringing Calculating Trace Lengths (Electrically Long Traces) Trace Routing Routing Layers Crosstalk Trace Separation and the 3-W Rule Guard/Shunt Traces Trace Termination This chapter contains sections titled: References



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