725 resources related to DRAM chips
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The world's premier EDA and semiconductor design conference and exhibition. DAC features over 60 sessions on design methodologies and EDA tool developments, keynotes, panels, plus the NEW User Track presentations. A diverse worldwide community representing more than 1,000 organizations attends each year, from system designers and architects, logic and circuit designers, validation engineers, CAD managers, senior managers and executives to researchers and academicians from leading universities.
2014 IEEE 20th International Symposium on High Performance Computer Architecture (HPCA)
Topics of interest include, but are not limited to:+Processor, cache, and memory architectures+Parallel computer architectures+Multicore architectures+Impact of technology on architecture+Power-efficient architectures and techniques+Dependable/secure architectures+High-performance I/O systems+Embedded and reconfigurable architectures+Interconnect and network interface architectures+Architectures for cloud-based HPC and data centers+Innovative hardware/software trade-offs+Impact of compilers and system software on architecture+Performance modeling and evaluation+Architectures for emerging technology and applications
2013 IEEE 24th International Conference on Application-specific Systems, Architectures and Processors (ASAP)
The conference will cover the theory and practice of application-specific systems, architectures and processors. The 2013 conference will build upon traditional strengths in areas such as arithmetic, cryptography, compression, signal and image processing, application-specific instruction processors, etc.
2013 IEEE International 3D Systems Integration Conference (3DIC)
Technologies for enabling 3D systems based on Through Silicon Vias.
IEEE EUROCON 2013
The IEEE Region 8 EuroCon 2013 Conference is a premier forum for the exchange of ideas, open and direct discussion on the development of the Circuits and Systems, Multimedia, Information and Communication Technology and energy and power systems. It has achieved a considerable success during the past seven editions covering majority of the fields in the area of electrical engineering.
Methods, algorithms, and human-machine interfaces for physical and logical design, including: planning, synthesis, partitioning, modeling, simulation, layout, verification, testing, and documentation of integrated-circuit and systems designs of all complexities. Practical applications of aids resulting in producible analog, digital, optical, or microwave integrated circuits are emphasized.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
The goal of IEEE Transactions on Multimedia is to integrate all aspects of multimedia systems and technology, signal processing, and applications. It will cover various aspects of research in multimedia technology and applications including, but not limited to: circuits, algorithms and macro/micro-architectures, software, detailed design, synchronization, interaction, joint processing and coordination of multimedia and multimodal signals/data, compression, storage, retrieval, communication, ...
The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as device modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete ...
Integrated circuits and systems;VLSI based Architecture and applications; highspeed circuits and interconnect; mixed-signal SoC; speed/area/power/noise tradeoffs in CMOS circuits.
Jolly, R.D.; Kamins, T.I.; McCharles, R.H. Electron Device Letters, IEEE, 1983
A new, one-transistor, dynamic RAM cell has been fabricated in beam- recrystallized polysilicon. Placing thin oxides both above and below the storage region doubles the storage capacitance. Complete isolation of the storage region by oxides also reduces the susceptibility of the cell to soft errors from collection of charge injected into the substrate by the surrounding elements or by alpha ...
Grube, Matthias; Martin, D.; Weber, Walter M.; Bierwagen, O.; Geelhaar, L.; Riechert, H. Signals, Circuits and Systems (SCS), 2009 3rd International Conference on, 2009
Zirconium oxide based high-k dielectrics are studied for their possible future integration in Dynamic Random Access Memory (DRAM) Metal-Insulator-Metal (MIM) capacitors. To better understand their electrical properties a combined study is presented considering both their macroscopic and mesoscopic electrical behavior. Molecular beam deposition is used to deposit thin films of ZrO2 as well as (ZrO2)x (Al2O3)1-x. Three different ZrO2 deposition ...
Shan Zhong; Alpay, S.P.; Roytburd, A.L.; Mantese, Joseph V. Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on, 2006
Ferroelectric multilayers and superlattices have gained interest for dynamic random access memory (DRAM) applications and as active elements in tunable microwave devices in the telecommunications industry. A number of experimental studies have shown that these materials have many peculiar properties which cannot be described by a simple series connection of the individual layers that make up the heterostructures. A thermodynamic ...
Brent, Richard P. Frontiers of Massively Parallel Computation, 1992., Fourth Symposium on the, 1992
The author describes an implementation of the LINPACK benchmark on the Fujitsu AP 1000. Design considerations include communication primitives, data distribution, use of blocking to reduce memory references, and effective use of the cache. The LINPACK benchmark results show that the AP 1000 is a good machine for numerical linear algebra, and that one can consistently achieve close to 80 ...
Tsubouchi, N.; Miyoshi, H.; Abe, H.; Enomoto, T. Electron Devices, IEEE Transactions on, 1979
The applications of the high-pressure oxidation method to the fabrication of MOS LSI are described. High-pressure selective oxidation of silicon with the use of silicon nitride film as a mask was investigated. Oxidation-induced stacking faults were found to be reduced significantly by the high-pressure steam oxidation compared with the conventional wet O2atmospheric oxidation. The refresh time characteristics in a 16 ...
Ellis, Wayne Effects of Reliability Mechanisms On VLSI Circuit Functionality, 2004
This tutorial discusses examples of reliability mechanisms and how these can affect the normal operation of selected VLSI circuits. Large circuit-count ASIC chips use standard digital and analog circuits such as Logic gates, eSRAM, eDRAM and I/O circuits which must function properly under various voltage and thermal environments. These chips are subjected to Reliability Screens such as Burn In to ...
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