31 resources related to D-HEMTs
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Conference provides an international forum for the presentation and discussion of the recent development and future trends in the field of microelectronics. It covers important aspects of micro- and nano-electronic devices, circuits and systems.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Adesida, I.; Mahajan, A.; Cueva, G. Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on, 1998
Processes for the monolithic integration of enhancement- and depletion-mode HEMTs (E/D-HEMTs) in the lattice matched InP material system are described. Using the buried Pt gate technology, 0.3 μm gate-length E-HEMTs exhibiting a threshold voltage of +167 mV and a maximum extrinsic transconductance, gmext, of 700 mS/mm are demonstrated. D-HEMTs with corresponding device parameters of -443 mV and 462 mS/mm are ...
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Electron Devices, IEEE Transactions on, 1996
High performance InP-based InAlAs/InGaAs enhancement-mode HEMT's are demonstrated using two improved approaches to device structure design and fabrication, i.e., nonalloyed ohmic contacts and Pt-based buried-gate technologies, to reduce the source resistance (RS). With specially designed cap layer structures, nonalloyed ohmic contacts to the device channel were obtained providing contact resistance as low as 0.067 Ω*mm. Furthermore, in device fabrication, a ...
Kwan, A.M.H.; Yue Guan; Xiaosen Liu; Chen, K.J. Electron Devices, IEEE Transactions on, 2014
On a GaN smart power integrated circuit (IC) platform, a highly linear (i.e., proportional to absolute temperature) temperature sensor IC is demonstrated for building voltage references as well as temperature compensation functional blocks. The circuit is designed based on the temperature-dependent characteristics of GaN-based peripheral devices (e.g., heterojunction Schottky barrier diode, enhancement-/depletion-mode high electron mobility transistors, and lateral field-effect rectifiers) ...
Miyashita, T.; Olmos, A.; Nihei, M.; Watanabe, Y. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual, 1997
We designed and fabricated a 5 GHz oversampling, 100 MHz bandwidth continuous time second order /spl Sigma//spl Delta/ analog-to-digital converter (ADC) using 0.4-/spl mu/m InGaP/-InGaAs enhancement and depletion mode high electron mobility transistor (E/D HEMT) technology. We propose the polarity alternating feedback (PAF) technique for enhancing the sampling frequency and have applied it in the design of an ADC circuit. ...
Kang, I.H.; Kim, S.C.; Bahng, W.; Kim, N.K. Microelectronics, 2006 25th International Conference on, 2006
The DC, RF, and low-frequency noise characteristics were investigated for a quasi-enhancement-mode (QE) HEMT using a selective hydrogen pretreatment (SHP). The QE-HEMT with SHP showed a large shift in threshold voltage without severe degradation of RF performances including cut-off frequency and maximum oscillation frequency, compared with those of HEMT without SHP. Moreover, the QE HEMT exhibited a reduction of low-frequency ...
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