43 resources related to D-HEMTs
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Conference provides an international forum for the presentation and discussion of the recent development and future trends in the field of microelectronics. It covers important aspects of micro- and nano-electronic devices, circuits and systems.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Electron Devices, IEEE Transactions on, 1996
High performance InP-based InAlAs/InGaAs enhancement-mode HEMT's are demonstrated using two improved approaches to device structure design and fabrication, i.e., nonalloyed ohmic contacts and Pt-based buried-gate technologies, to reduce the source resistance (RS). With specially designed cap layer structures, nonalloyed ohmic contacts to the device channel were obtained providing contact resistance as low as 0.067 Ω*mm. Furthermore, in device fabrication, a ...
Yong Cai; Yugang Zhou; Chen, K.J.; Lau, K.M. Electron Device Letters, IEEE, 2005
We report a novel approach in fabricating high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs. The fabrication technique is based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing with an annealing temperature lower than 500/spl deg/C. Starting with a conventional depletion-mode HEMT sample, we found that fluoride-based plasma treatment can effectively shift the threshold ...
Miyashita, T.; Olmos, A.; Nihei, M.; Watanabe, Y. Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual, 1997
We designed and fabricated a 5 GHz oversampling, 100 MHz bandwidth continuous time second order /spl Sigma//spl Delta/ analog-to-digital converter (ADC) using 0.4-/spl mu/m InGaP/-InGaAs enhancement and depletion mode high electron mobility transistor (E/D HEMT) technology. We propose the polarity alternating feedback (PAF) technique for enhancing the sampling frequency and have applied it in the design of an ADC circuit. ...
Ueno, H.; Yamakawa, S.; Hamaguchi, C.; Miyatsuji, K. Physics and Computer Modeling of Devices Based on Low-Dimensional Structures, 1995. Proceedings., International Workshop on, 1995
Device simulation of HEMT (High Electron Mobility Transistor) has been carried out by ensemble Monte Carlo simulation. Since the electrons in HEMT are confined in GaAs region at the GaAs-AlGaAs hetero-interface, their motion is two-dimensional when the electron energy is low and thus we have to take into account the quantization of electrons at the interface. In order to develop ...
Adesida, I.; Mahajan, A.; Cueva, G. Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on, 1998
Processes for the monolithic integration of enhancement- and depletion-mode HEMTs (E/D-HEMTs) in the lattice matched InP material system are described. Using the buried Pt gate technology, 0.3 μm gate-length E-HEMTs exhibiting a threshold voltage of +167 mV and a maximum extrinsic transconductance, gmext, of 700 mS/mm are demonstrated. D-HEMTs with corresponding device parameters of -443 mV and 462 mS/mm are ...
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