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Conference provides an international forum for the presentation and discussion of the recent development and future trends in the field of microelectronics. It covers important aspects of micro- and nano-electronic devices, circuits and systems.
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Electron Devices, IEEE Transactions on, 1996
High performance InP-based InAlAs/InGaAs enhancement-mode HEMT's are demonstrated using two improved approaches to device structure design and fabrication, i.e., nonalloyed ohmic contacts and Pt-based buried-gate technologies, to reduce the source resistance (RS). With specially designed cap layer structures, nonalloyed ohmic contacts to the device channel were obtained providing contact resistance as low as 0.067 Ω*mm. Furthermore, in device fabrication, a ...
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on, 1995
In this paper, we demonstrate greatly improved RS in an E-HEMT structure using non-alloyed ohmic contact and Pt-based buried gate approaches. First, the non- alloyed ohmic contact technique was used to produce very low contact resistance and to provide sharply defined ohmic edges. Second, in the fabrication of our E-HEMT's, we first intentionally fabricated depletion-mode HEMTs (D-HEMTs). Subsequently, by annealing ...
Kwan, A.M.H.; Chen, K.J. Electron Device Letters, IEEE, 2013
On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high- electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection ...
Maezawa, K.; Matsuzaki, Hideaki; Osaka, J.; Yokoyama, H.; Yamamoto, M.; Otsuji, T. Indium Phosphide and Related Materials, 1998 International Conference on, 1998
A resonant tunneling flip-flop circuit was fabricated based on a monostable- bistable transition logic element (MOBILE). In this work, an SCFL-type output buffer and depletion-mode HEMTs were employed in a different way to previous studies. A practical output voltage level close to the SCFL interface was first demonstrated with a MOBILE circuit operating at a high bit rate of up ...
Yong Cai; Yugang Zhou; Chen, K.J.; Kei May Lau Electron Device Letters, IEEE, 2005
We report a novel approach in fabricating high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs. The fabrication technique is based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing with an annealing temperature lower than 500°C. Starting with a conventional depletion-mode HEMT sample, we found that fluoride-based plasma treatment can effectively shift the threshold voltage ...
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Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.