IEEE Organizations related to D-HEMTs

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Conferences related to D-HEMTs

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2012 28th International Conference on Microelectronics (MIEL 2012)

Conference provides an international forum for the presentation and discussion of the recent development and future trends in the field of microelectronics. It covers important aspects of micro- and nano-electronic devices, circuits and systems.

  • 2010 27th International Conference on Microelectronics (MIEL 2010)

    Various aspects of micro- and nano-electronic devices, circuits and systems, including materials and processes, technologies and devices, device physics and modelling, process and device simulation, circuit design and testing, system design and packagin, and characterization and reliability.

  • 2008 26th International Conference on Microelectronics (MIEL 2008)

    All important aspects of micro- and nano-electronic devices, circuits and systems, including: materials and processes, technologies and devices, device physics and modeling, process and device simulation, circuit and system design and testing, packaging, characterization and reliability, etc.

  • 2006 25th International Conference on Microelectronics (MIEL 2006)



Periodicals related to D-HEMTs

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.




Xplore Articles related to D-HEMTs

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Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion

Shen Feng; J. Sauerer; D. Seitzer Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual, 1994

The paper presents design considerations and implementation of analog components, including an operational amplifier, latched comparator, 1 bit D/A converter and second-order modulator, for a fully differential delta-sigma modulation oversampling A/D converter in a 0.5 /spl mu/m GaAs E/D HEMT technology. On-wafer measurements demonstrate that the second-order modulator achieves a 60 dB dynamic range at a Nyquist conversion rate of ...


Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs

Alex Man Ho Kwan; Xiaosen Liu; Kevin J. Chen Electron Devices Meeting (IEDM), 2012 IEEE International, 2012

On a GaN smart power IC platform, a robust GaN high electron mobility transistor (HEMT) with integrated gate protection is demonstrated by embedding a depletion-mode HEMT (D-HEMT) into the gate electrode of an enhancement-mode HEMT (E-HEMT). This protection scheme allows large input bias (e.g. 20 V) without gate-overdrive-induced reliability issues, and yields no penalties on the ON-state current and OFF-state ...


A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

Alex Man Ho Kwan; Kevin J. Chen IEEE Electron Device Letters, 2013

On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high- electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection ...


A high-speed resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE) with an SCFL-type output buffer

K. Maezawa; H. Matsuzaki; J. Osaka; H. Yokoyama; M. Yamamoto; T. Otsuji Indium Phosphide and Related Materials, 1998 International Conference on, 1998

A resonant tunneling flip-flop circuit was fabricated based on a monostable- bistable transition logic element (MOBILE). In this work, an SCFL-type output buffer and depletion-mode HEMTs were employed in a different way to previous studies. A practical output voltage level close to the SCFL interface was first demonstrated with a MOBILE circuit operating at a high bit rate of up ...


5 GHz /spl Sigma//spl Delta/ analog-to-digital converter with polarity alternating feedback comparator

T. Miyashita; A. Olmos; M. Nihei; Y. Watanabe Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual, 1997

We designed and fabricated a 5 GHz oversampling, 100 MHz bandwidth continuous time second order /spl Sigma//spl Delta/ analog-to-digital converter (ADC) using 0.4-/spl mu/m InGaP/-InGaAs enhancement and depletion mode high electron mobility transistor (E/D HEMT) technology. We propose the polarity alternating feedback (PAF) technique for enhancing the sampling frequency and have applied it in the design of an ADC circuit. ...


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Educational Resources on D-HEMTs

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eLearning

Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion

Shen Feng; J. Sauerer; D. Seitzer Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual, 1994

The paper presents design considerations and implementation of analog components, including an operational amplifier, latched comparator, 1 bit D/A converter and second-order modulator, for a fully differential delta-sigma modulation oversampling A/D converter in a 0.5 /spl mu/m GaAs E/D HEMT technology. On-wafer measurements demonstrate that the second-order modulator achieves a 60 dB dynamic range at a Nyquist conversion rate of ...


Integrated gate-protected HEMTs and mixed-signal functional blocks for GaN smart power ICs

Alex Man Ho Kwan; Xiaosen Liu; Kevin J. Chen Electron Devices Meeting (IEDM), 2012 IEEE International, 2012

On a GaN smart power IC platform, a robust GaN high electron mobility transistor (HEMT) with integrated gate protection is demonstrated by embedding a depletion-mode HEMT (D-HEMT) into the gate electrode of an enhancement-mode HEMT (E-HEMT). This protection scheme allows large input bias (e.g. 20 V) without gate-overdrive-induced reliability issues, and yields no penalties on the ON-state current and OFF-state ...


A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

Alex Man Ho Kwan; Kevin J. Chen IEEE Electron Device Letters, 2013

On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high- electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection ...


A high-speed resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE) with an SCFL-type output buffer

K. Maezawa; H. Matsuzaki; J. Osaka; H. Yokoyama; M. Yamamoto; T. Otsuji Indium Phosphide and Related Materials, 1998 International Conference on, 1998

A resonant tunneling flip-flop circuit was fabricated based on a monostable- bistable transition logic element (MOBILE). In this work, an SCFL-type output buffer and depletion-mode HEMTs were employed in a different way to previous studies. A practical output voltage level close to the SCFL interface was first demonstrated with a MOBILE circuit operating at a high bit rate of up ...


5 GHz /spl Sigma//spl Delta/ analog-to-digital converter with polarity alternating feedback comparator

T. Miyashita; A. Olmos; M. Nihei; Y. Watanabe Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1997. Technical Digest 1997., 19th Annual, 1997

We designed and fabricated a 5 GHz oversampling, 100 MHz bandwidth continuous time second order /spl Sigma//spl Delta/ analog-to-digital converter (ADC) using 0.4-/spl mu/m InGaP/-InGaAs enhancement and depletion mode high electron mobility transistor (E/D HEMT) technology. We propose the polarity alternating feedback (PAF) technique for enhancing the sampling frequency and have applied it in the design of an ADC circuit. ...


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