31 resources related to D-HEMTs
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Conference provides an international forum for the presentation and discussion of the recent development and future trends in the field of microelectronics. It covers important aspects of micro- and nano-electronic devices, circuits and systems.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Kwan, A.M.H.; Xiaosen Liu; Chen, K.J. Electron Devices Meeting (IEDM), 2012 IEEE International, 2012
On a GaN smart power IC platform, a robust GaN high electron mobility transistor (HEMT) with integrated gate protection is demonstrated by embedding a depletion-mode HEMT (D-HEMT) into the gate electrode of an enhancement-mode HEMT (E-HEMT). This protection scheme allows large input bias (e.g. 20 V) without gate-overdrive-induced reliability issues, and yields no penalties on the ON-state current and OFF-state ...
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Electron Devices, IEEE Transactions on, 1996
High performance InP-based InAlAs/InGaAs enhancement-mode HEMT's are demonstrated using two improved approaches to device structure design and fabrication, i.e., nonalloyed ohmic contacts and Pt-based buried-gate technologies, to reduce the source resistance (RS). With specially designed cap layer structures, nonalloyed ohmic contacts to the device channel were obtained providing contact resistance as low as 0.067 Ω*mm. Furthermore, in device fabrication, a ...
Kang, I.H.; Kim, S.C.; Bahng, W.; Kim, N.K. Microelectronics, 2006 25th International Conference on, 2006
The DC, RF, and low-frequency noise characteristics were investigated for a quasi-enhancement-mode (QE) HEMT using a selective hydrogen pretreatment (SHP). The QE-HEMT with SHP showed a large shift in threshold voltage without severe degradation of RF performances including cut-off frequency and maximum oscillation frequency, compared with those of HEMT without SHP. Moreover, the QE HEMT exhibited a reduction of low-frequency ...
Maezawa, K.; Matsuzaki, Hideaki; Osaka, J.; Yokoyama, H.; Yamamoto, M.; Otsuji, T. Indium Phosphide and Related Materials, 1998 International Conference on, 1998
A resonant tunneling flip-flop circuit was fabricated based on a monostable- bistable transition logic element (MOBILE). In this work, an SCFL-type output buffer and depletion-mode HEMTs were employed in a different way to previous studies. A practical output voltage level close to the SCFL interface was first demonstrated with a MOBILE circuit operating at a high bit rate of up ...
Kwan, A.M.H.; Chen, K.J. Electron Device Letters, IEEE, 2013
On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high- electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection ...
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