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Conference provides an international forum for the presentation and discussion of the recent development and future trends in the field of microelectronics. It covers important aspects of micro- and nano-electronic devices, circuits and systems.
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Electron Devices, IEEE Transactions on , 1996
High performance InP-based InAlAs/InGaAs enhancement-mode HEMT's are demonstrated using two improved approaches to device structure design and fabrication, i.e., nonalloyed ohmic contacts and Pt-based buried-gate technologies, to reduce the source resistance (RS). With specially designed cap layer structures, nonalloyed ohmic contacts to the device channel were obtained providing contact resistance as low as 0.067 Ω*mm. Furthermore, in device fabrication, a ...
Yong Cai; Yugang Zhou; Chen, K.J.; Kei May Lau Electron Device Letters, IEEE , 2005
We report a novel approach in fabricating high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs. The fabrication technique is based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing with an annealing temperature lower than 500°C. Starting with a conventional depletion-mode HEMT sample, we found that fluoride-based plasma treatment can effectively shift the threshold voltage ...
Kwan, A.M.H.; Guan, Y.; Liu, X.; Chen, K.J. Electron Devices, IEEE Transactions on , 2014
On a GaN smart power integrated circuit (IC) platform, a highly linear (i.e., proportional to absolute temperature) temperature sensor IC is demonstrated for building voltage references as well as temperature compensation functional blocks. The circuit is designed based on the temperature-dependent characteristics of GaN-based peripheral devices (e.g., heterojunction Schottky barrier diode, enhancement-/depletion-mode high electron mobility transistors, and lateral field-effect rectifiers) ...
Adesida, I.; Mahajan, A.; Cueva, G. Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on , 1998
Processes for the monolithic integration of enhancement- and depletion-mode HEMTs (E/D-HEMTs) in the lattice matched InP material system are described. Using the buried Pt gate technology, 0.3 μm gate-length E-HEMTs exhibiting a threshold voltage of +167 mV and a maximum extrinsic transconductance, gmext, of 700 mS/mm are demonstrated. D-HEMTs with corresponding device parameters of -443 mV and 462 mS/mm are ...
Kwan, A.M.H.; Xiaosen Liu; Chen, K.J. Electron Devices Meeting (IEDM), 2012 IEEE International , 2012
On a GaN smart power IC platform, a robust GaN high electron mobility transistor (HEMT) with integrated gate protection is demonstrated by embedding a depletion-mode HEMT (D-HEMT) into the gate electrode of an enhancement-mode HEMT (E-HEMT). This protection scheme allows large input bias (e.g. 20 V) without gate-overdrive-induced reliability issues, and yields no penalties on the ON-state current and OFF-state ...
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Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.
Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.