IEEE Organizations related to D-HEMTs

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Conferences related to D-HEMTs

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2012 28th International Conference on Microelectronics (MIEL 2012)

Conference provides an international forum for the presentation and discussion of the recent development and future trends in the field of microelectronics. It covers important aspects of micro- and nano-electronic devices, circuits and systems.

  • 2010 27th International Conference on Microelectronics (MIEL 2010)

    Various aspects of micro- and nano-electronic devices, circuits and systems, including materials and processes, technologies and devices, device physics and modelling, process and device simulation, circuit design and testing, system design and packagin, and characterization and reliability.

  • 2008 26th International Conference on Microelectronics (MIEL 2008)

    All important aspects of micro- and nano-electronic devices, circuits and systems, including: materials and processes, technologies and devices, device physics and modeling, process and device simulation, circuit and system design and testing, packaging, characterization and reliability, etc.

  • 2006 25th International Conference on Microelectronics (MIEL 2006)



Periodicals related to D-HEMTs

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Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.




Xplore Articles related to D-HEMTs

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High-performance enhancement-mode InAlAs/InGaAs HEMTs using non-alloyed ohmic contact and Pt-based buried-gate

K. J. Chen; T. Enoki; K. Maezawa; K. Arai; M. Yamamoto Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on, 1995

In this paper, we demonstrate greatly improved RS in an E-HEMT structure using non-alloyed ohmic contact and Pt-based buried gate approaches. First, the non- alloyed ohmic contact technique was used to produce very low contact resistance and to provide sharply defined ohmic edges. Second, in the fabrication of our E-HEMT's, we first intentionally fabricated depletion-mode HEMTs (D-HEMTs). Subsequently, by annealing ...


Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion

Shen Feng; J. Sauerer; D. Seitzer Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual, 1994

The paper presents design considerations and implementation of analog components, including an operational amplifier, latched comparator, 1 bit D/A converter and second-order modulator, for a fully differential delta-sigma modulation oversampling A/D converter in a 0.5 /spl mu/m GaAs E/D HEMT technology. On-wafer measurements demonstrate that the second-order modulator achieves a 60 dB dynamic range at a Nyquist conversion rate of ...


Low-Frequency-Noise Characteristic of Quasi-Enhancement-Mode HEMT Using a Selectively Hydrogen-Pretreatment

I. H. Kang; S. C. Kim; W. Bahng; N. K. Kim 2006 25th International Conference on Microelectronics, 2006

The DC, RF, and low-frequency noise characteristics were investigated for a quasi-enhancement-mode (QE) HEMT using a selective hydrogen pretreatment (SHP). The QE-HEMT with SHP showed a large shift in threshold voltage without severe degradation of RF performances including cut-off frequency and maximum oscillation frequency, compared with those of HEMT without SHP. Moreover, the QE HEMT exhibited a reduction of low-frequency ...


A high-speed resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE) with an SCFL-type output buffer

K. Maezawa; H. Matsuzaki; J. Osaka; H. Yokoyama; M. Yamamoto; T. Otsuji Indium Phosphide and Related Materials, 1998 International Conference on, 1998

A resonant tunneling flip-flop circuit was fabricated based on a monostable- bistable transition logic element (MOBILE). In this work, an SCFL-type output buffer and depletion-mode HEMTs were employed in a different way to previous studies. A practical output voltage level close to the SCFL interface was first demonstrated with a MOBILE circuit operating at a high bit rate of up ...


A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

Alex Man Ho Kwan; Kevin J. Chen IEEE Electron Device Letters, 2013

On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high- electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection ...


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Educational Resources on D-HEMTs

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eLearning

High-performance enhancement-mode InAlAs/InGaAs HEMTs using non-alloyed ohmic contact and Pt-based buried-gate

K. J. Chen; T. Enoki; K. Maezawa; K. Arai; M. Yamamoto Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on, 1995

In this paper, we demonstrate greatly improved RS in an E-HEMT structure using non-alloyed ohmic contact and Pt-based buried gate approaches. First, the non- alloyed ohmic contact technique was used to produce very low contact resistance and to provide sharply defined ohmic edges. Second, in the fabrication of our E-HEMT's, we first intentionally fabricated depletion-mode HEMTs (D-HEMTs). Subsequently, by annealing ...


Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion

Shen Feng; J. Sauerer; D. Seitzer Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual, 1994

The paper presents design considerations and implementation of analog components, including an operational amplifier, latched comparator, 1 bit D/A converter and second-order modulator, for a fully differential delta-sigma modulation oversampling A/D converter in a 0.5 /spl mu/m GaAs E/D HEMT technology. On-wafer measurements demonstrate that the second-order modulator achieves a 60 dB dynamic range at a Nyquist conversion rate of ...


Low-Frequency-Noise Characteristic of Quasi-Enhancement-Mode HEMT Using a Selectively Hydrogen-Pretreatment

I. H. Kang; S. C. Kim; W. Bahng; N. K. Kim 2006 25th International Conference on Microelectronics, 2006

The DC, RF, and low-frequency noise characteristics were investigated for a quasi-enhancement-mode (QE) HEMT using a selective hydrogen pretreatment (SHP). The QE-HEMT with SHP showed a large shift in threshold voltage without severe degradation of RF performances including cut-off frequency and maximum oscillation frequency, compared with those of HEMT without SHP. Moreover, the QE HEMT exhibited a reduction of low-frequency ...


A high-speed resonant tunneling flip-flop circuit employing a monostable-bistable transition logic element (MOBILE) with an SCFL-type output buffer

K. Maezawa; H. Matsuzaki; J. Osaka; H. Yokoyama; M. Yamamoto; T. Otsuji Indium Phosphide and Related Materials, 1998 International Conference on, 1998

A resonant tunneling flip-flop circuit was fabricated based on a monostable- bistable transition logic element (MOBILE). In this work, an SCFL-type output buffer and depletion-mode HEMTs were employed in a different way to previous studies. A practical output voltage level close to the SCFL interface was first demonstrated with a MOBILE circuit operating at a high bit rate of up ...


A Gate Overdrive Protection Technique for Improved Reliability in AlGaN/GaN Enhancement-Mode HEMTs

Alex Man Ho Kwan; Kevin J. Chen IEEE Electron Device Letters, 2013

On a GaN smart power integrated-circuit platform, a monolithically integrated gate-protected high-voltage AlGaN/GaN enhancement-/depletion-mode high- electron mobility transistor (HEMT) has been proposed. It can sustain large input gate voltage swing (>; 20 V) with enhanced safety (no gate failure observed) and improved reliability (no observable shifting of the threshold voltage), and the breakdown voltage is not sacrificed. Such a protection ...


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