Cutoff frequency

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In physics and electrical engineering, a cutoff frequency, corner frequency, or break frequency is a boundary in a system's frequency response at which energy flowing through the system begins to be reduced rather than passing through. (Wikipedia.org)






Conferences related to Cutoff frequency

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2013 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

RF, analog and mixed-signal circuits, Modeling and simulation, Sensors and interface circuits, Hardware-software co-design, Digital circuits and ASIC, Logic and architecture synthesis, CPU, DSP and multicore architectures, Physical design and verification, Memory circuits and systems, Design for manufacturability, Low power logic and architectures, Power estimation and optimization, Multimedia processing circuits, Design verification, Communication circuits, Test generation and fault simulation, Embedded systems and software, BIST and design for testability, Designs using novel technologies, RF, analog and mixed-signal test, System-in-package design, SOC and system level testing, Electronic System Level Design, System level design automation.


2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

ICMMT2012 will be held in Shenzhen, China on May 5-8, 2012. Technical papers describing original work in research, development, and application of all area in microwave and millimeter wave are solicited, including antennas, EM theory and numerical methods, RFIC, EMC, measurement, wireless and optic communications. ICMMT2012 is organized, sponsored by Microwave Society of Chinese Institute of Electronics, co-sponsored by Harbin Institute of Technology Shenzhen Graduate School, South China University of Technology, and KingRadio Technology, and technically co-sponsored by IEEE Beijing Section, IEEE Nanjing Section, IEEE Shanghai Section, IEEE Harbin Section, etc. ICMMT is intended to provide a broad international forum and nice opportunity for the scientists and engineers to present their new ideas and exchange information on research. We welcome you to join us and share your contributions in the conference.


2007 14th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2007)

ICECS is a major international forum presenting design methodologies, techniques and experimental results in emerging electronics, circuits and systems topics. Topics include: Analog/Digital Circuits, and Signal Processing, Sensing and Sensor Networks, Telecommunications and Multimedia, RF and Wireless Circuits & Systems, Photonic and Optoelectronic Circuits, Biomedical Circuits & Systems, Test and Reliability System Architectures and Applications, Neural Network Circuits & Systems, Design Automation of Ele



Periodicals related to Cutoff frequency

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Audio, Speech, and Language Processing, IEEE Transactions on

Speech analysis, synthesis, coding speech recognition, speaker recognition, language modeling, speech production and perception, speech enhancement. In audio, transducers, room acoustics, active sound control, human audition, analysis/synthesis/coding of music, and consumer audio. (8) (IEEE Guide for Authors) The scope for the proposed transactions includes SPEECH PROCESSING - Transmission and storage of Speech signals; speech coding; speech enhancement and noise reduction; ...


Electron Device Letters, IEEE

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronic devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


Solid-State Circuits, IEEE Journal of

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as device modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete ...


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Most published Xplore authors for Cutoff frequency

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Xplore Articles related to Cutoff frequency

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Octave-bandwith feed horn for paraboloid

J. Shimizu IRE Transactions on Antennas and Propagation, 1961

First Page of the Article ![](/xploreAssets/images/absImages/01144980.png)


Multisine excitation design using synchronous square wave sources

Michael J. Schmitz; Roger A. Green 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), 2013

A method for generating a multisine excitation signal from the summation of multiple synchronous square wave sources is presented to reduce the power consumption and complexity of system identification hardware. The proposed algorithm is capable of optimizing a multisine frequency distribution to approximate a target frequency distribution while also preventing corruption from higher order excitation harmonics generated by system nonlinearities. ...


Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels

K. Horio; Y. Fuseya; H. Kusuki; H. Yanai IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991

Current-voltage characteristics of GaAs MESFETs (with p-butter layers) on semi-insulating substrates compensated by deep levels are simulated by two- carrier and one-carrier models. For a thicker p-buffer layer or for higher acceptor density in the substrate, the drain current becomes lower because the substrate current is reduced. The one-carrier model also gives reasonable results for a case with a hole-trap ...


Dynamics of spatial hole burning effects in DFB lasers

R. Schatz IEEE Journal of Quantum Electronics, 1995

A lumped small-signal model for intensity and frequency modulation response of semiconductor lasers, including the effects of longitudinal spatial hole burning (SHB), is presented. It is shown that the laser dynamics including SHB-effects can be accurately described by three small-signal rate equations. The simplicity of the model gives new insight into SHB-effects on modulation response and cavity state stability. It ...


Dither in linear systems with memoryless nonlinearity and optimal control

Feng-Hsiag Hsiao; Jiing-Dong Hwang IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 1997

The injection of a high-frequency signal, commonly called dither, into a nonlinear system may improve its performance. Stability of the dithered system is related to that of its corresponding model - the smoothed system, of which the nonlinear element Ns (smoothed nonlinearity) is the convolution of the dither distribution and the original nonlinearity N. The dither amplitude, but not its ...


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Educational Resources on Cutoff frequency

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eLearning

Octave-bandwith feed horn for paraboloid

J. Shimizu IRE Transactions on Antennas and Propagation, 1961

First Page of the Article ![](/xploreAssets/images/absImages/01144980.png)


Multisine excitation design using synchronous square wave sources

Michael J. Schmitz; Roger A. Green 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), 2013

A method for generating a multisine excitation signal from the summation of multiple synchronous square wave sources is presented to reduce the power consumption and complexity of system identification hardware. The proposed algorithm is capable of optimizing a multisine frequency distribution to approximate a target frequency distribution while also preventing corruption from higher order excitation harmonics generated by system nonlinearities. ...


Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels

K. Horio; Y. Fuseya; H. Kusuki; H. Yanai IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991

Current-voltage characteristics of GaAs MESFETs (with p-butter layers) on semi-insulating substrates compensated by deep levels are simulated by two- carrier and one-carrier models. For a thicker p-buffer layer or for higher acceptor density in the substrate, the drain current becomes lower because the substrate current is reduced. The one-carrier model also gives reasonable results for a case with a hole-trap ...


Dynamics of spatial hole burning effects in DFB lasers

R. Schatz IEEE Journal of Quantum Electronics, 1995

A lumped small-signal model for intensity and frequency modulation response of semiconductor lasers, including the effects of longitudinal spatial hole burning (SHB), is presented. It is shown that the laser dynamics including SHB-effects can be accurately described by three small-signal rate equations. The simplicity of the model gives new insight into SHB-effects on modulation response and cavity state stability. It ...


Dither in linear systems with memoryless nonlinearity and optimal control

Feng-Hsiag Hsiao; Jiing-Dong Hwang IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, 1997

The injection of a high-frequency signal, commonly called dither, into a nonlinear system may improve its performance. Stability of the dithered system is related to that of its corresponding model - the smoothed system, of which the nonlinear element Ns (smoothed nonlinearity) is the convolution of the dither distribution and the original nonlinearity N. The dither amplitude, but not its ...


More eLearning Resources

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IEEE-USA E-Books

  • GaN Based Transistors for High Temperature Applications

    We review theoretical and experimental results for GaN-based field effect transistors (FET) and discuss their potential for high temperature applications. We demonstrate that a decrease in ionized impurity scattering with an increase in temperature makes AIGaN-GaN DC-HFET to be superior candidates for high temperature applications. In these devices, a large sheet carrier concentration in the device channel allows us to obtain a relatively low parasitic series resistance and to achieve superior de and ac performance (with the cutoff frequency times gate length product of 18.3 GHz x m demonstrated recently by our group at room temperature). © 1997 Elsevier Science S.A.

  • HighTemperature Characteristics of AlAs/GaAs/AlAs Resonant Thnneling Diodes

    This article reports the high-temperature de characteristics of double-barrier AlAs/GaAs/AlAs resonant tunneling diodes, over the temperature range 22°C to 185°C. The negative differential resistance of these quantum-well structures persisted up to the highest temperature; over this temperature range of 163°C, the peak current increased slightly (5%), but the valley current increased significantly (180%), resulting in a reduction of the peak-to-valley current ratio from 3.5 at 22°C to 1.3 at 185°C. The slight change in the peak current indicated that the diodes were of high quality and that tunneling was the dominant conduction mechanism. The difference between the voltage at the valley and at the peak decreased from 115mV at 22°C to 80 mV at 185°C. Between 125°C and 185°C, the valley current as a function oftemperature could be fitted to an Arrhenius-type dependence with an activation energy of 120meV.Although these quantum-well diodes appear usable to at least 185°C, the temperature dependence of the peak-to-valley current ratio and voltage difference would significantly affect their performance, such as switching speed, oscillator power, or cutoff frequency, for digital or analog circuit applications at high temperatures.



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