Cutoff frequency

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In physics and electrical engineering, a cutoff frequency, corner frequency, or break frequency is a boundary in a system's frequency response at which energy flowing through the system begins to be reduced rather than passing through. (Wikipedia.org)






Conferences related to Cutoff frequency

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2013 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

RF, analog and mixed-signal circuits, Modeling and simulation, Sensors and interface circuits, Hardware-software co-design, Digital circuits and ASIC, Logic and architecture synthesis, CPU, DSP and multicore architectures, Physical design and verification, Memory circuits and systems, Design for manufacturability, Low power logic and architectures, Power estimation and optimization, Multimedia processing circuits, Design verification, Communication circuits, Test generation and fault simulation, Embedded systems and software, BIST and design for testability, Designs using novel technologies, RF, analog and mixed-signal test, System-in-package design, SOC and system level testing, Electronic System Level Design, System level design automation.


2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

ICMMT2012 will be held in Shenzhen, China on May 5-8, 2012. Technical papers describing original work in research, development, and application of all area in microwave and millimeter wave are solicited, including antennas, EM theory and numerical methods, RFIC, EMC, measurement, wireless and optic communications. ICMMT2012 is organized, sponsored by Microwave Society of Chinese Institute of Electronics, co-sponsored by Harbin Institute of Technology Shenzhen Graduate School, South China University of Technology, and KingRadio Technology, and technically co-sponsored by IEEE Beijing Section, IEEE Nanjing Section, IEEE Shanghai Section, IEEE Harbin Section, etc. ICMMT is intended to provide a broad international forum and nice opportunity for the scientists and engineers to present their new ideas and exchange information on research. We welcome you to join us and share your contributions in the conference.



Periodicals related to Cutoff frequency

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Audio, Speech, and Language Processing, IEEE Transactions on

Speech analysis, synthesis, coding speech recognition, speaker recognition, language modeling, speech production and perception, speech enhancement. In audio, transducers, room acoustics, active sound control, human audition, analysis/synthesis/coding of music, and consumer audio. (8) (IEEE Guide for Authors) The scope for the proposed transactions includes SPEECH PROCESSING - Transmission and storage of Speech signals; speech coding; speech enhancement and noise reduction; ...


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


Solid-State Circuits, IEEE Journal of

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as device modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete ...


Systems, Man, and Cybernetics, Part B, IEEE Transactions on

The scope of the IEEE Transactions on Systems, Man and Cybernetics Part B: Cybernetics includes computational approaches to the field of cybernetics. Specifically, the transactions welcomes papers on communication and control across machines or between machines, humans, and organizations. The scope of Part B includes such areas as computational intelligence, computer vision, neural networks, genetic algorithms, machine learning, fuzzy systems, ...



Most published Xplore authors for Cutoff frequency

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Xplore Articles related to Cutoff frequency

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Octave Bandwidth Orthomode Transducers for the Expanded Very Large Array

Gordon M. Coutts IEEE Transactions on Antennas and Propagation, 2011

Quadruple-ridge orthomode transducers (OMTs) have been designed to operate over a full octave bandwidth for the expanded very large array (EVLA) project. The OMT separates linearly polarized signal components by matching a circular waveguide input to two orthogonal coaxial outputs. The OMT is used in conjunction with a quadrature hybrid to detect circularly polarized signal components. This paper focuses on ...


Wideband Diagonal Quadruple-Ridge Orthomode Transducer for Circular Polarization Detection

Gordon M. Coutts IEEE Transactions on Antennas and Propagation, 2011

A novel diagonal quadruple-ridge OMT with a compact geometry is proposed for detecting circularly polarized signals when used in conjunction with a 90 degree phase shifter. X-Band OMT prototypes, covering 8 GHz-12 GHz, have been fabricated and tested, and exceed specifications by a wide margin, with no evidence of trapped-mode resonances in the operating bandwidth. In addition to having good ...


The Dominant Cutoff Wavelength of a Lunar Line

A. Ishimaru; A. Y. Hu IRE Transactions on Microwave Theory and Techniques, 1961

A method is presented for calculating the lowest cutoff wavelength of a new microwave transmission line, the "lunar line," which is formed by two eccentric circular metal tubes connected with a metal bar or tangential to each other. The lunar-shaped cross section is approximated by introducing a series of steps in the outer guide wall and by dividing the cross ...


Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper)

Y. K. Chen; G. W. Wang; D. C. Radulescu; A. N. Lepore; P. J. Tasker; L. F. Eastman; E. Strid IEEE Transactions on Microwave Theory and Techniques, 1987

Double heterojunction AIGaAs/InGaAs/GaAs modulation-doped field effect transistors (MODFET's) using lattice-strained AIGaAs/InGaAs/GaAs layer structure have been fabricated and evaluated at microwave frequencies for various bias conditions. MODFET's with a 1-µm gate length show a room- temperature peak extrinsic dc transconductance (gm) of 400 mS/mm with a full channel current of 610 mA/mm. For 0.3-µm-gate MODFET's an extrinsic dc gm of 505 ...


A high-selectivity low-pass filter using a new coplanar waveguide with tuning septums

Pang-Cheng Hsu; Cam Nguyen IEEE Antennas and Propagation Society International Symposium. 1995 Digest, 1995

A new low-pass filter with a high selectivity at a cutoff frequency of 4 GHz has been developed with insertion loss and return loss of less than 0.5 dB and more than 20 dB, respectively. The low-pass filter employs a new coplanar waveguide (CPW) with underside tuning septums which is suitable for microwave integrated circuits. The new transmission line has ...


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Educational Resources on Cutoff frequency

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eLearning

Octave Bandwidth Orthomode Transducers for the Expanded Very Large Array

Gordon M. Coutts IEEE Transactions on Antennas and Propagation, 2011

Quadruple-ridge orthomode transducers (OMTs) have been designed to operate over a full octave bandwidth for the expanded very large array (EVLA) project. The OMT separates linearly polarized signal components by matching a circular waveguide input to two orthogonal coaxial outputs. The OMT is used in conjunction with a quadrature hybrid to detect circularly polarized signal components. This paper focuses on ...


Wideband Diagonal Quadruple-Ridge Orthomode Transducer for Circular Polarization Detection

Gordon M. Coutts IEEE Transactions on Antennas and Propagation, 2011

A novel diagonal quadruple-ridge OMT with a compact geometry is proposed for detecting circularly polarized signals when used in conjunction with a 90 degree phase shifter. X-Band OMT prototypes, covering 8 GHz-12 GHz, have been fabricated and tested, and exceed specifications by a wide margin, with no evidence of trapped-mode resonances in the operating bandwidth. In addition to having good ...


The Dominant Cutoff Wavelength of a Lunar Line

A. Ishimaru; A. Y. Hu IRE Transactions on Microwave Theory and Techniques, 1961

A method is presented for calculating the lowest cutoff wavelength of a new microwave transmission line, the "lunar line," which is formed by two eccentric circular metal tubes connected with a metal bar or tangential to each other. The lunar-shaped cross section is approximated by introducing a series of steps in the outer guide wall and by dividing the cross ...


Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper)

Y. K. Chen; G. W. Wang; D. C. Radulescu; A. N. Lepore; P. J. Tasker; L. F. Eastman; E. Strid IEEE Transactions on Microwave Theory and Techniques, 1987

Double heterojunction AIGaAs/InGaAs/GaAs modulation-doped field effect transistors (MODFET's) using lattice-strained AIGaAs/InGaAs/GaAs layer structure have been fabricated and evaluated at microwave frequencies for various bias conditions. MODFET's with a 1-µm gate length show a room- temperature peak extrinsic dc transconductance (gm) of 400 mS/mm with a full channel current of 610 mA/mm. For 0.3-µm-gate MODFET's an extrinsic dc gm of 505 ...


A high-selectivity low-pass filter using a new coplanar waveguide with tuning septums

Pang-Cheng Hsu; Cam Nguyen IEEE Antennas and Propagation Society International Symposium. 1995 Digest, 1995

A new low-pass filter with a high selectivity at a cutoff frequency of 4 GHz has been developed with insertion loss and return loss of less than 0.5 dB and more than 20 dB, respectively. The low-pass filter employs a new coplanar waveguide (CPW) with underside tuning septums which is suitable for microwave integrated circuits. The new transmission line has ...


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IEEE-USA E-Books

  • HighTemperature Characteristics of AlAs/GaAs/AlAs Resonant Thnneling Diodes

    This article reports the high-temperature de characteristics of double-barrier AlAs/GaAs/AlAs resonant tunneling diodes, over the temperature range 22°C to 185°C. The negative differential resistance of these quantum-well structures persisted up to the highest temperature; over this temperature range of 163°C, the peak current increased slightly (5%), but the valley current increased significantly (180%), resulting in a reduction of the peak-to-valley current ratio from 3.5 at 22°C to 1.3 at 185°C. The slight change in the peak current indicated that the diodes were of high quality and that tunneling was the dominant conduction mechanism. The difference between the voltage at the valley and at the peak decreased from 115mV at 22°C to 80 mV at 185°C. Between 125°C and 185°C, the valley current as a function oftemperature could be fitted to an Arrhenius-type dependence with an activation energy of 120meV.Although these quantum-well diodes appear usable to at least 185°C, the temperature dependence of the peak-to-valley current ratio and voltage difference would significantly affect their performance, such as switching speed, oscillator power, or cutoff frequency, for digital or analog circuit applications at high temperatures.

  • GaN Based Transistors for High Temperature Applications

    We review theoretical and experimental results for GaN-based field effect transistors (FET) and discuss their potential for high temperature applications. We demonstrate that a decrease in ionized impurity scattering with an increase in temperature makes AIGaN-GaN DC-HFET to be superior candidates for high temperature applications. In these devices, a large sheet carrier concentration in the device channel allows us to obtain a relatively low parasitic series resistance and to achieve superior de and ac performance (with the cutoff frequency times gate length product of 18.3 GHz x m demonstrated recently by our group at room temperature). © 1997 Elsevier Science S.A.



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