Cutoff frequency

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In physics and electrical engineering, a cutoff frequency, corner frequency, or break frequency is a boundary in a system's frequency response at which energy flowing through the system begins to be reduced rather than passing through. (Wikipedia.org)






Conferences related to Cutoff frequency

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2013 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

RF, analog and mixed-signal circuits, Modeling and simulation, Sensors and interface circuits, Hardware-software co-design, Digital circuits and ASIC, Logic and architecture synthesis, CPU, DSP and multicore architectures, Physical design and verification, Memory circuits and systems, Design for manufacturability, Low power logic and architectures, Power estimation and optimization, Multimedia processing circuits, Design verification, Communication circuits, Test generation and fault simulation, Embedded systems and software, BIST and design for testability, Designs using novel technologies, RF, analog and mixed-signal test, System-in-package design, SOC and system level testing, Electronic System Level Design, System level design automation.


2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

ICMMT2012 will be held in Shenzhen, China on May 5-8, 2012. Technical papers describing original work in research, development, and application of all area in microwave and millimeter wave are solicited, including antennas, EM theory and numerical methods, RFIC, EMC, measurement, wireless and optic communications. ICMMT2012 is organized, sponsored by Microwave Society of Chinese Institute of Electronics, co-sponsored by Harbin Institute of Technology Shenzhen Graduate School, South China University of Technology, and KingRadio Technology, and technically co-sponsored by IEEE Beijing Section, IEEE Nanjing Section, IEEE Shanghai Section, IEEE Harbin Section, etc. ICMMT is intended to provide a broad international forum and nice opportunity for the scientists and engineers to present their new ideas and exchange information on research. We welcome you to join us and share your contributions in the conference.



Periodicals related to Cutoff frequency

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Audio, Speech, and Language Processing, IEEE Transactions on

Speech analysis, synthesis, coding speech recognition, speaker recognition, language modeling, speech production and perception, speech enhancement. In audio, transducers, room acoustics, active sound control, human audition, analysis/synthesis/coding of music, and consumer audio. (8) (IEEE Guide for Authors) The scope for the proposed transactions includes SPEECH PROCESSING - Transmission and storage of Speech signals; speech coding; speech enhancement and noise reduction; ...


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


Solid-State Circuits, IEEE Journal of

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as device modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete ...


Systems, Man, and Cybernetics, Part B, IEEE Transactions on

The scope of the IEEE Transactions on Systems, Man and Cybernetics Part B: Cybernetics includes computational approaches to the field of cybernetics. Specifically, the transactions welcomes papers on communication and control across machines or between machines, humans, and organizations. The scope of Part B includes such areas as computational intelligence, computer vision, neural networks, genetic algorithms, machine learning, fuzzy systems, ...



Most published Xplore authors for Cutoff frequency

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Xplore Articles related to Cutoff frequency

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Reduction of extrinsic base resistance in GaAs/AlGaAs heterojunction bipolar transistors and correlation with high-frequency performance

Electron Device Letters, IEEE, 1986

Improved high-frequency performance in GaAs/AlGaAs heterojunction bipolar transistors (HBT's) by reduction of extrinsic base resistance is demonstrated. A new self-aligned process which is very simple, yet capable of producing 0.25-µm emitter-to-base contact gaps, is described. By the use of AuBe, we have also been able to produce contact resistances to p-type GaAs (p = 5 × 1018) as low as ...


InGaAs MESFET's for millimeter-wave low-noise applications

Microwave and Guided Wave Letters, IEEE, 1991

It is reported that excellent device performance and uniformity can be achieved with 0.25- mu m gate InGaAs MESFET fabricated by the mixed manufacturing technology of metalorganic chemical vapor deposition (MOCVD) and ion implantation. An average unity gain cutoff frequency of 102 GHz with a standard deviation of 12 GHz is derived from the S-parameter measurements of 139 devices uniformly ...


Frequency response improvement of 120 GHz f<sub>T</sub> SiGe HBT by optimizing the contact configurations

Microwave Symposium Digest, 2004 IEEE MTT-S International, 2004

For characterizing the frequency and power response of the SiGe HBT devices, the HBT devices with different base and collector contact configuration structure have been fabricated by using the 0.18 μm high-speed SiGe BiCMOS technologies. In this work, we investigated three different types of layout with the same emitter area AE=0.3×10.16 μm2, including single base and single collector contact, double ...


A new approach for an embedded Wi-Fi controller in a C band phased array antenna

Microwave Conference, 2009. EuMC 2009. European, 2009

Modern phased array antennas in radar systems are composed of several thousands of transmit/receive modules (TRM). Performance of radars are strongly related to the correct functioning of the control chain for such modules. It is therefore fundamental to perform diagnostic and monitoring of main characteristics of active array components; in this way, system performance may be checked and, if necessary, ...


A Recursive Park Transformation to Improve the Performance of Synchronous Reference Frame Controllers in Shunt Active Power Filters

Power Electronics, IEEE Transactions on, 2009

Load harmonic currents and load unbalances reduce power quality (PQ) supplied by electrical networks. Shunt active power filters (SAPFs) are a well-known solution that can be employed to enhance electrical PQ by injecting a compensation current at the point of common coupling (PCC) of the SAPF, the load, and the electrical grid. Hence, SAPF controllers must determine the instantaneous values ...


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Educational Resources on Cutoff frequency

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eLearning

A simple derivation of the spectral transformations for IIR filters

S. C. D. Roy IEEE Transactions on Education, 2005

A simple method is given for deriving the spectral transformations for infinite-impulse response (IIR) filters, which can be used to transform a prototype low-pass (LP) digital filter to another LP, high-pass (HP), bandpass (BP), or band-stop (BS) digital filter with prescribed passband edge(s) and the same tolerances as those of the prototype. The method is based on a combination of ...


Circuit direct replacement method enhanced skirt response of open stub low-pass filter

Jan-Dong Tseng; Wei-Ting Liu 2006 Asia-Pacific Microwave Conference, 2006

An interdigital low-pass structure directly replacing center open stub of odd- order open stub low-pass filter to achieve sharp skirt response is proposed. The characteristics of interdigital structure were first analyzed by lumped elements equivalent circuits and investigated by full-wave microwave circuit simulator, IE3D. These simulated results were then applied as guideline for the replacement. An open stub low-pass filter ...


The heave motion estimation for active heave compensation system in offshore crane

Ning Xianliang; Zhao Jiawen; Xu Jianan 2016 IEEE International Conference on Mechatronics and Automation, 2016

Active heave compensation is widely applied to decouple lifting loads from the ship motions due to wave excitation. This work presents a method of heave velocity estimation in active heave compensation system, which depends on the measured signals from an inertial measurement unit (IMU). The method is achieved by the motion transformation from IMU to the top of offshore crane ...


Deterministic simulation of SiGe HBTs based on the Boltzmann equation

Sung-Min Hong; Christoph Jungemann ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008

In this paper, a deterministic approach to electron transport based on the spherical harmonics expansion of the Boltzmann equation is presented for SiGe heterojunction bipolar transistors. In order to take into account the position-dependent minima of the valleys of the conduction band, a new formulation of the discretized scattering integral for non-aligned and non- equidistant energy grids is developed. The ...


Single-electron transistors: Electrostatic analogs of the DC SQUIDS

K. Likharev IEEE Transactions on Magnetics, 1987

Dynamics of two simple structures (Fig. 2) comprising twin pairs of small tunnel junctions is analyzed. If the single-electron conductances ![R\min{1.2}\max {-1}](/images/tex/8508.gif) and capacitances C1.2of the junctions are small enough (Eq 1), the dynamics is influenced drastically by e-quantization of the electrical charge Q of the central electrode. As a result, the structures become close analogs of the dc SQUIDs ...


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IEEE-USA E-Books

  • HighTemperature Characteristics of AlAs/GaAs/AlAs Resonant Thnneling Diodes

    This article reports the high-temperature de characteristics of double-barrier AlAs/GaAs/AlAs resonant tunneling diodes, over the temperature range 22°C to 185°C. The negative differential resistance of these quantum-well structures persisted up to the highest temperature; over this temperature range of 163°C, the peak current increased slightly (5%), but the valley current increased significantly (180%), resulting in a reduction of the peak-to-valley current ratio from 3.5 at 22°C to 1.3 at 185°C. The slight change in the peak current indicated that the diodes were of high quality and that tunneling was the dominant conduction mechanism. The difference between the voltage at the valley and at the peak decreased from 115mV at 22°C to 80 mV at 185°C. Between 125°C and 185°C, the valley current as a function oftemperature could be fitted to an Arrhenius-type dependence with an activation energy of 120meV.Although these quantum-well diodes appear usable to at least 185°C, the temperature dependence of the peak-to-valley current ratio and voltage difference would significantly affect their performance, such as switching speed, oscillator power, or cutoff frequency, for digital or analog circuit applications at high temperatures.

  • GaN Based Transistors for High Temperature Applications

    We review theoretical and experimental results for GaN-based field effect transistors (FET) and discuss their potential for high temperature applications. We demonstrate that a decrease in ionized impurity scattering with an increase in temperature makes AIGaN-GaN DC-HFET to be superior candidates for high temperature applications. In these devices, a large sheet carrier concentration in the device channel allows us to obtain a relatively low parasitic series resistance and to achieve superior de and ac performance (with the cutoff frequency times gate length product of 18.3 GHz x m demonstrated recently by our group at room temperature). © 1997 Elsevier Science S.A.



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