Cutoff frequency

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In physics and electrical engineering, a cutoff frequency, corner frequency, or break frequency is a boundary in a system's frequency response at which energy flowing through the system begins to be reduced rather than passing through. (Wikipedia.org)






Conferences related to Cutoff frequency

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2013 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)

RF, analog and mixed-signal circuits, Modeling and simulation, Sensors and interface circuits, Hardware-software co-design, Digital circuits and ASIC, Logic and architecture synthesis, CPU, DSP and multicore architectures, Physical design and verification, Memory circuits and systems, Design for manufacturability, Low power logic and architectures, Power estimation and optimization, Multimedia processing circuits, Design verification, Communication circuits, Test generation and fault simulation, Embedded systems and software, BIST and design for testability, Designs using novel technologies, RF, analog and mixed-signal test, System-in-package design, SOC and system level testing, Electronic System Level Design, System level design automation.


2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)

ICMMT2012 will be held in Shenzhen, China on May 5-8, 2012. Technical papers describing original work in research, development, and application of all area in microwave and millimeter wave are solicited, including antennas, EM theory and numerical methods, RFIC, EMC, measurement, wireless and optic communications. ICMMT2012 is organized, sponsored by Microwave Society of Chinese Institute of Electronics, co-sponsored by Harbin Institute of Technology Shenzhen Graduate School, South China University of Technology, and KingRadio Technology, and technically co-sponsored by IEEE Beijing Section, IEEE Nanjing Section, IEEE Shanghai Section, IEEE Harbin Section, etc. ICMMT is intended to provide a broad international forum and nice opportunity for the scientists and engineers to present their new ideas and exchange information on research. We welcome you to join us and share your contributions in the conference.



Periodicals related to Cutoff frequency

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Audio, Speech, and Language Processing, IEEE Transactions on

Speech analysis, synthesis, coding speech recognition, speaker recognition, language modeling, speech production and perception, speech enhancement. In audio, transducers, room acoustics, active sound control, human audition, analysis/synthesis/coding of music, and consumer audio. (8) (IEEE Guide for Authors) The scope for the proposed transactions includes SPEECH PROCESSING - Transmission and storage of Speech signals; speech coding; speech enhancement and noise reduction; ...


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Nanotechnology, IEEE Transactions on

The proposed IEEE Transactions on Nanotechnology will be devoted to the publication of manuscripts of archival value in the general area of nanotechnology, that is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.


Solid-State Circuits, IEEE Journal of

The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as device modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete ...


Systems, Man, and Cybernetics, Part B, IEEE Transactions on

The scope of the IEEE Transactions on Systems, Man and Cybernetics Part B: Cybernetics includes computational approaches to the field of cybernetics. Specifically, the transactions welcomes papers on communication and control across machines or between machines, humans, and organizations. The scope of Part B includes such areas as computational intelligence, computer vision, neural networks, genetic algorithms, machine learning, fuzzy systems, ...




Xplore Articles related to Cutoff frequency

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An Inversely Tapered Corrugated CPW

S. J. Kim; N. H. Myung 2003 33rd European Microwave Conference, 2003

A novel photonic bandgap (PBG) structure, consisting of inversely tapered slots, is introduced. This structure, which is of low cost and easy design/fabrication, exhibits a low-pass behavior with a compact size and simple working principle. Its performances are demonstrated by simulation and measurement results and the working principle of the PBG is explained.


Design of a UWB antenna with stabilized radiation pattern

F. Keshmiri; R. Chandra; C. Craeye 2008 IEEE Antennas and Propagation Society International Symposium, 2008

The UWB circular disc monopole (CDM) antenna has been previously used for positioning applications. But at higher frequencies, its pattern does not remain omnidirectional in azimuth and it tends to shift upward. We propose new structures for both monopole radiator and ground plane to yield an antenna with a stabilized radiation pattern. Comparing the main lobe characteristics of the proposed ...


Clutter-free Doppler detection of signed velocity based on Legendre series expansion

S. Umemura; T. Azuma; T. Hayashi IEEE Ultrasonics Symposium, 2004, 2004

A clutter-free velocimetry based on Legendre polynomial series expansion, which can fully utilize the unique low-frequency cut-off characteristic of the polynomial regression filter, is conceived. A set of complex I/Q Doppler signals, with a packet size of N, is expanded into a series of Legendre polynomials, obtaining expansion coefficients, L(n), (n=0, ..., N-1). Complex Legendre coefficients, C(±n), are then formed ...


40 V BiCMOS technology with polysilicon emitter structure

S. Yamada; T. Yamauchi; M. Tokuriki; X. Inayoshi Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on, 1990

First Page of the Article ![](/xploreAssets/images/absImages/00991065.png)


The Inverted Conductor-Backed Slotline -- a Challenge to Antenna and Circuit Design

Jan Zehentner; Jan Machac; Jan Mrkvica; Carlo Tuzi 2003 33rd European Microwave Conference, 2003

Characteristics of modes on the conductorbacked slotline, the inverted conductor-backed slotline and on its modification in which the top dielectric layer with higher permittivity has a finite thickness are presented in this paper. Only the modified inverted conductor-backed slotline is able to transmit the dominant bound mode. The inverted and modified inverted conductor-backed slotlines are real candidates for the design ...


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Educational Resources on Cutoff frequency

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eLearning

An Inversely Tapered Corrugated CPW

S. J. Kim; N. H. Myung 2003 33rd European Microwave Conference, 2003

A novel photonic bandgap (PBG) structure, consisting of inversely tapered slots, is introduced. This structure, which is of low cost and easy design/fabrication, exhibits a low-pass behavior with a compact size and simple working principle. Its performances are demonstrated by simulation and measurement results and the working principle of the PBG is explained.


Design of a UWB antenna with stabilized radiation pattern

F. Keshmiri; R. Chandra; C. Craeye 2008 IEEE Antennas and Propagation Society International Symposium, 2008

The UWB circular disc monopole (CDM) antenna has been previously used for positioning applications. But at higher frequencies, its pattern does not remain omnidirectional in azimuth and it tends to shift upward. We propose new structures for both monopole radiator and ground plane to yield an antenna with a stabilized radiation pattern. Comparing the main lobe characteristics of the proposed ...


Clutter-free Doppler detection of signed velocity based on Legendre series expansion

S. Umemura; T. Azuma; T. Hayashi IEEE Ultrasonics Symposium, 2004, 2004

A clutter-free velocimetry based on Legendre polynomial series expansion, which can fully utilize the unique low-frequency cut-off characteristic of the polynomial regression filter, is conceived. A set of complex I/Q Doppler signals, with a packet size of N, is expanded into a series of Legendre polynomials, obtaining expansion coefficients, L(n), (n=0, ..., N-1). Complex Legendre coefficients, C(±n), are then formed ...


40 V BiCMOS technology with polysilicon emitter structure

S. Yamada; T. Yamauchi; M. Tokuriki; X. Inayoshi Power Semiconductor Devices and ICs, 1990. ISPSD '90. Proceedings of the 2nd International Symposium on, 1990

First Page of the Article ![](/xploreAssets/images/absImages/00991065.png)


The Inverted Conductor-Backed Slotline -- a Challenge to Antenna and Circuit Design

Jan Zehentner; Jan Machac; Jan Mrkvica; Carlo Tuzi 2003 33rd European Microwave Conference, 2003

Characteristics of modes on the conductorbacked slotline, the inverted conductor-backed slotline and on its modification in which the top dielectric layer with higher permittivity has a finite thickness are presented in this paper. Only the modified inverted conductor-backed slotline is able to transmit the dominant bound mode. The inverted and modified inverted conductor-backed slotlines are real candidates for the design ...


More eLearning Resources

IEEE.tv Videos

IMS 2011 Microapps - Local Fundamental Frequency Enhancements for X-Parameter Models
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A Highly-Efficient 138?170GHz SiGe HBT Frequency Doubler for PowerConstrained Applications: RFIC Interactive Forum
Co-design of Power Amplifier and Dynamic Power Supplies for Radar and Communications Transmitters
An 8-10GHz Upconversion Mixer, with a Low-Frequency Calibration Loop Resulting in Better Than -73dBc In-Band Spurs: RFIC Interactive Forum
IMS MicroApp: Advances in High Frequency Printed Circuit Board (PCB)
A 30-MHz-to-3-GHz CMOS Array Receiver with Frequency and Spatial Interference Filtering for Adaptive Antenna Systems: RFIC Industry Showcase
Radio Frequency Identification(RFID)
MicroApps: Different Methods for Capacitor Modelling in High-Frequency PCB-Based Diplexers (National Instruments)
MicroApps: Phase Noise, Allan Variance, and Frequency Reference (Agilent Technologies)
Micro-Apps 2013: Frequency Planning Synthesis for Wireless Systems Design
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Brooklyn 5G Summit 2014: Unleashing Millimeter-Wave Frequency by Andreas Roessler
Qualifying RF Systems for 5G Using Off the Shelf Parts Without Iterations: MicroApps 2015 - Keysight Technologies
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From THz imaging to millimeter-wave stimulation of neurons: Is there a killer application for high frequency RF in the medical community? (RFIC 2015 Keynote)
An Ultra-Wideband Low-Power ADPLL Chirp Synthesizer with Adaptive Loop Bandwidth in 65nm CMOS: RFIC Interactive Forum

IEEE-USA E-Books

  • GaN Based Transistors for High Temperature Applications

    We review theoretical and experimental results for GaN-based field effect transistors (FET) and discuss their potential for high temperature applications. We demonstrate that a decrease in ionized impurity scattering with an increase in temperature makes AIGaN-GaN DC-HFET to be superior candidates for high temperature applications. In these devices, a large sheet carrier concentration in the device channel allows us to obtain a relatively low parasitic series resistance and to achieve superior de and ac performance (with the cutoff frequency times gate length product of 18.3 GHz x m demonstrated recently by our group at room temperature). © 1997 Elsevier Science S.A.

  • HighTemperature Characteristics of AlAs/GaAs/AlAs Resonant Thnneling Diodes

    This article reports the high-temperature de characteristics of double-barrier AlAs/GaAs/AlAs resonant tunneling diodes, over the temperature range 22°C to 185°C. The negative differential resistance of these quantum-well structures persisted up to the highest temperature; over this temperature range of 163°C, the peak current increased slightly (5%), but the valley current increased significantly (180%), resulting in a reduction of the peak-to-valley current ratio from 3.5 at 22°C to 1.3 at 185°C. The slight change in the peak current indicated that the diodes were of high quality and that tunneling was the dominant conduction mechanism. The difference between the voltage at the valley and at the peak decreased from 115mV at 22°C to 80 mV at 185°C. Between 125°C and 185°C, the valley current as a function oftemperature could be fitted to an Arrhenius-type dependence with an activation energy of 120meV.Although these quantum-well diodes appear usable to at least 185°C, the temperature dependence of the peak-to-valley current ratio and voltage difference would significantly affect their performance, such as switching speed, oscillator power, or cutoff frequency, for digital or analog circuit applications at high temperatures.



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