Crystallization

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Crystallization is the (natural or artificial) process of formation of solid crystals precipitating from a solution, melt or more rarely deposited directly from a gas. (Wikipedia.org)






Conferences related to Crystallization

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2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2011 3rd International Conference on Computer Design and Applications (ICCDA 2011)

The aim objective of ICCDA 2011 is to provide a platform for researchers, engineers, academicians as well as industrial professionals from all over the world to present their research results and development activities in Computer Design and Applications.


2010 International Conference on Biology, Environment and Chemistry (ICBEC)

ICBEC is an international forum for state-of-the-art research in Biology, Environment and Chemistry. It also serves to foster communication among researchers and practitioners working in a wide variety of scientific areas with a common interest in improving Biology, Environment and Chemistry related techniques.



Periodicals related to Crystallization

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Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


Electron Devices, IEEE Transactions on

Publishes original and significant contributions relating to the theory, design, performance and reliability of electron devices, including optoelectronics devices, nanoscale devices, solid-state devices, integrated electronic devices, energy sources, power devices, displays, sensors, electro-mechanical devices, quantum devices and electron tubes.


Magnetics, IEEE Transactions on

Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The Transactions publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.



Most published Xplore authors for Crystallization

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Xplore Articles related to Crystallization

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Field Emission Characteristics Of Defective Diamond Films

Kyung Ho Park; Soonil Lee; Kug-Hyun Song; Jung II Park; Kwang Ja Park; Seek-Yoon Han; Seong Jun Na; Nam-Yang Lee; Ken Ha Koh 10th International Conference on Vacuum Microelectronics, 1997

First Page of the Article ![](/xploreAssets/images/absImages/00627638.png)


Di-interstitial diffusivity and migration path calculations based on tight-binding Hamiltonian molecular dynamics

M. Hane; T. Ikezawa; G. H. Gilmer 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502), 2000

Molecular dynamics calculations were performed for di-interstitial-silicon based on the tight-binding model for silicon. Calculation results indicate that the di-interstitial can diffuse into crystalline silicon as fast as the mono-interstitial silicon. Three kinds of the stable configurations were found: T, Z, and W-configuration. The T-configuration is the lowest while the W is the higher energy level configuration. A critical-path method ...


Exact analysis of acoustic wave propagation in piezoelectric fibers of hexagonal crystal symmetry

V. Winkel; J. E. B. Oliveira; J. D. Dai; C. K. Jen IEEE 1992 Ultrasonics Symposium Proceedings, 1992

An exact analysis is presented for acoustic wave propagation in a cladded acoustic fiber having a core and an infinite thick cladding both made of piezoelectric hexagonal crystal of 6-mm point group symmetry. The crystalline Z axes of both the core and cladding coincide with the fiber axis. A general dispersion equation is derived for all the acoustic modes propagating ...


Photoresponsive interpenetrating network photonic crystal

Marta K. Maurer; David E. Condon; Heather E. McKinney; Jin-Kwang Kim 2009 IEEE Sensors, 2009

We have developed a photonic crystal-based hydrogel which changes volume upon exposure to light and possesses unique optical properties. The photoswitchable material was created by embedding a crystalline colloidal array into a polyacrylamide network, and then infusing a second network, consisting of an azobenzene derivative, disperse red 1 methacrylate monomer, into the first network. We observed a 55 nm diffraction ...


Effect of sintering temperature on dielectric properties of tungsten doped barium titanate

Sheela Devi; Sameer Jain; A. K. Jha 2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008

In the present work, samples of compositions BaTi1??xWxO3; x= 0.00 and 0.15 were synthesized by solid-state reaction technique at various sintering temperatures of 1200??C, 1250??C and 1300??C and durations 2hr and 5hr. The X- ray diffractograms analyses reveal the formation of the samples having single phase crystalline structure. Tetragonal strain of the samples has been calculated and its variations with ...


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Educational Resources on Crystallization

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eLearning

Field Emission Characteristics Of Defective Diamond Films

Kyung Ho Park; Soonil Lee; Kug-Hyun Song; Jung II Park; Kwang Ja Park; Seek-Yoon Han; Seong Jun Na; Nam-Yang Lee; Ken Ha Koh 10th International Conference on Vacuum Microelectronics, 1997

First Page of the Article ![](/xploreAssets/images/absImages/00627638.png)


Di-interstitial diffusivity and migration path calculations based on tight-binding Hamiltonian molecular dynamics

M. Hane; T. Ikezawa; G. H. Gilmer 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502), 2000

Molecular dynamics calculations were performed for di-interstitial-silicon based on the tight-binding model for silicon. Calculation results indicate that the di-interstitial can diffuse into crystalline silicon as fast as the mono-interstitial silicon. Three kinds of the stable configurations were found: T, Z, and W-configuration. The T-configuration is the lowest while the W is the higher energy level configuration. A critical-path method ...


Exact analysis of acoustic wave propagation in piezoelectric fibers of hexagonal crystal symmetry

V. Winkel; J. E. B. Oliveira; J. D. Dai; C. K. Jen IEEE 1992 Ultrasonics Symposium Proceedings, 1992

An exact analysis is presented for acoustic wave propagation in a cladded acoustic fiber having a core and an infinite thick cladding both made of piezoelectric hexagonal crystal of 6-mm point group symmetry. The crystalline Z axes of both the core and cladding coincide with the fiber axis. A general dispersion equation is derived for all the acoustic modes propagating ...


Photoresponsive interpenetrating network photonic crystal

Marta K. Maurer; David E. Condon; Heather E. McKinney; Jin-Kwang Kim 2009 IEEE Sensors, 2009

We have developed a photonic crystal-based hydrogel which changes volume upon exposure to light and possesses unique optical properties. The photoswitchable material was created by embedding a crystalline colloidal array into a polyacrylamide network, and then infusing a second network, consisting of an azobenzene derivative, disperse red 1 methacrylate monomer, into the first network. We observed a 55 nm diffraction ...


Effect of sintering temperature on dielectric properties of tungsten doped barium titanate

Sheela Devi; Sameer Jain; A. K. Jha 2008 17th IEEE International Symposium on the Applications of Ferroelectrics, 2008

In the present work, samples of compositions BaTi1??xWxO3; x= 0.00 and 0.15 were synthesized by solid-state reaction technique at various sintering temperatures of 1200??C, 1250??C and 1300??C and durations 2hr and 5hr. The X- ray diffractograms analyses reveal the formation of the samples having single phase crystalline structure. Tetragonal strain of the samples has been calculated and its variations with ...


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IEEE-USA E-Books

  • Effects of Melting on Faulting and Continental Deformation

    The presence of melt is closely related to the localization of deformation in faults and shear zones in a variety of tectonic settings. This relationship is observed on length scales from the outcrop to plate boundary faults to orogens. However, the question of whether melting induces localization, or localization creates a pathway for melts, can rarely be answered from field observations alone. Experimental studies show that rock strength decreases exponentially with increasing volume percentage of melt. This suggests that melting facilitates strain localization where deformation would be homogeneous in the absence of melt. Yet, the extrapolation of experimental relationships between rock strength and melt content to natural conditions at depth in the lithosphere remains speculative, largely because the grain-scale processes underlying dramatic weakening at small amounts of melt have yet to be investigated in crustal rocks. New geochronological methods for dating minerals that crystallized during deformation in the presence of melt have the potential to constrain the time lag between the onset of melting and deformation in naturally deformed anatectic rocks. An indirect, but clear answer to the question of whether melting induces strain localization on a regional scale comes from numerical models of orogenesis which can be run in the presence or absence of low-viscosity domains that approximate the mechanical behavior of partially melted rock. These models show that melting induces lateral flow of anatectic crust within horizontal channels usually situated at the base of the continental crust. These channels have strong vertical strain gradients, especially at their boundaries where shear zones accommodate lateral extrusion of the anatectic rock in between. Together with their bounding shear zones, these flow channels form a new class of faults, which we term " ;extrusional faults." Extrusional faults containing long-lived melt (tens of millions of years) can support large, broadly distributed topographic loads such as orogenic plateaus and can exhume deeply buried rocks from beneath orogens. In contrast, strike-slip and oblique-slip faults serve as steep conduits for the rapid ascent, differentiation, and crystallization of melt. The relatively short residence time of melts in such moderately to steeply dipping fault systems can lead to episodic motion, with long periods of creep punctuated by shorter periods of melt veining, magmatic activity, and/or faster slip.



Standards related to Crystallization

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