Crystallization

View this topic in
Crystallization is the (natural or artificial) process of formation of solid crystals precipitating from a solution, melt or more rarely deposited directly from a gas. (Wikipedia.org)






Conferences related to Crystallization

Back to Top

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

Ferroelectric materials and applications


2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAM

  • 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

    Process & Device Technologies1. Channel Engineering2. High-k/Metal gate Technology3. Advanced Source/Drain Technology4. Interconnect Technology5. Advanced 3D Integration6. Novel Process Technologies7. Ultra-Thin Body Transistors and Device Variability8. Advanced High-k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs11. CNT, MTJ Devices and Nanowire Photodiodes12. Low- Power and Steep Slope Switching Devices13. Graphene Devices14. Advanced Technologies for Ge MOSFETs15. Organic semiconductor devices and technologies16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability19. Flash Memory20. IT Magnetic RAM21. Resistive RAMs22. Phase Change Memory23. 3-Dimensional Memory24. MEMS Technology25. Thin Film Transistors26. Biosensors27. PV and Energy Harvesting28. Front End of Line (FEOL) R

  • 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High Kdielectric , Advance Memories , nano -electronics, Organic and Compound semiconductor devices ,sensors and MEMS, Semiconductor material erization, Reliability , Modeling and simulation,Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low -power, RF devices & circuits, ICCAD

  • 2010 IEEE 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

    Silicon IC, Silicon/germanium devices , Interconnect , Low K and High K dielectric , Advance Memories , nano-electronics, Organic and Compound semiconductor devices , sensors and MEMS, Semiconductor material characterization, Reliability , Modeling and simulation, Packaging and testing , Digital, Analog, Mixed Signal IC and SOC design technology,Low-power, RF devices & circuits, IC CAD .

  • 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2006 8th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)

  • 2004 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)


2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

The conference for researchers and experts has been providing good opportunitiesto exchange scientific and technological knowledge on active-matrix flatpanel displays(AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics(PV) technologies, and other related topics. Papers are solicited on, but not limited to, thefollowing topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays,touch screens, driving methods, integrated drivers, and display materials and systems. TFTsTechnologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organicTFTs, oxide TFTs, such as graphene, semiconductor nanowires, carbon nanotubes, and device modeling, device & circuit simulation, and their reliability.Photovoltaics (PV): thin-film solar cells, amorphous /crystalline Si heterojunction, transparent conductive oxides.

  • 2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Paper are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): flexible display, LCDs, OLED, e-papers, 3D displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline and polycrystalline Si-based TFTs, organic TFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs,displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems. TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs,organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices(AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AMFPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics: Flat Panel Display (FPD): LCDs OLED displays e papers 3 D displays LCDs, displays, epapers, 3-displays, flexible displays, touch screens, driving methods, integrated drivers, and display materials and systems.TFT Technologies (TFT): amorphous, microcrystalline, and polycrystalline Si TFTs, organicTFTs, oxide TFTs, other material TFTs such as graphene, carbon nanotubes, and semiconductor nanowires, device modeling, device and circuit simulation, and reliability. Photovoltaics (PV): thin-film solar cells, amorphous/crystalline Si heterojunction, passivation, transparent conductive oxides.

  • 2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific and technological knowledge on active-matrix flatpanel displays (AM-FPDs), thin-film transistors (TFTs), thin-film materials and devices (TFMD), photovoltaics (PV) technologies, and other related topics. Papers are solicited on, but not limited to, the following topics:

  • 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

    Conference for researchers and experts, this workshop has been providing good opportunities to exchange scientific ideas for advanced information on active-matrix flatpanel displays (AM-FPDs) including thin-film transistors (TFTs), and solar cells.


2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018)

Covering terahertz, far infrared and millimeter wave science, technology and applications


2018 9th International Particle Accelerator Conference (IPAC)

Topics cover a complete survey of the field of charged particle accelerator science and technology and infrastructure.


More Conferences

Periodicals related to Crystallization

Back to Top

Antennas and Propagation, IEEE Transactions on

Experimental and theoretical advances in antennas including design and development, and in the propagation of electromagnetic waves including scattering, diffraction and interaction with continuous media; and applications pertinent to antennas and propagation, such as remote sensing, applied optics, and millimeter and submillimeter wave techniques.


Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Automatic Control, IEEE Transactions on

The theory, design and application of Control Systems. It shall encompass components, and the integration of these components, as are necessary for the construction of such systems. The word `systems' as used herein shall be interpreted to include physical, biological, organizational and other entities and combinations thereof, which can be represented through a mathematical symbolism. The Field of Interest: shall ...


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.


More Periodicals

Most published Xplore authors for Crystallization

Back to Top

Xplore Articles related to Crystallization

Back to Top

Magnetic and structural transitions in helimagnetic YMn/sub 2/O/sub 5/

[{u'author_order': 1, u'affiliation': u'Center for Condensed Matter Sci., Nat. Taiwan Univ., Taiwan', u'full_name': u'J. G. Lin'}, {u'author_order': 2, u'affiliation': u'Center for Condensed Matter Sci., Nat. Taiwan Univ., Taiwan', u'full_name': u'T. C. Han'}] 2005 IEEE International Magnetics Conference (INTERMAG), None

Two ferroelectric YMn/sub 2/O/sub 5/ samples with different phases were prepared, one is orthorhombic (OR) and another is hexagonal (HX) structure, for investigating the structure dependency of magnetic properties. The crystal structures and magnetic properties of the samples were examined by X-ray diffraction (XRD) and physical property measurement system, respectively. Based on the results of temperature-dependent magnetization and low temperature ...


Magnetic properties of Fe/sub 3/GeN/sub x/

[{u'author_order': 1, u'affiliation': u'Carnegie Mellon University', u'full_name': u'Y. Xu'}, {u'author_order': 2, u'full_name': u'J. M. Elbicki'}, {u'author_order': 3, u'full_name': u'W. E. Wallace'}, {u'author_order': 4, u'full_name': u'S. Shimizu'}, {u'author_order': 5, u'full_name': u'S. G. Sankar'}] 1992 IEEE International Magnetics Conference (INTERMAG), None

First Page of the Article ![](/xploreAssets/images/absImages/00696376.png)


Laser damage thresholds of optical coatings at 0.351 µm

[{u'author_order': 1, u'affiliation': u'University of Rochester, Rochester, NY, USA', u'full_name': u'J. Abate'}] IEEE Journal of Quantum Electronics, 1981

First Page of the Article ![](/xploreAssets/images/absImages/01070700.png)


Volume effect on the magnetic properties of Fe/sub 3-x/Cr/sub x/Al

[{u'author_order': 1, u'affiliation': u'Inst. of Exp. Phys., Bialystok Univ., Poland', u'full_name': u'A. Go'}, {u'author_order': 2, u'full_name': u'M. Pugaczowa-Michalska'}, {u'author_order': 3, u'full_name': u'L. Dobrzynski'}] 2005 IEEE International Magnetics Conference (INTERMAG), None

The dependence of the total magnetic moment versus lattice constant is studied. The alloy studied was a Fe/sub 3-x/Cr/sub x/Al alloy. It was found that the total magnetic moment decreases with decreasing lattice parameters. With the decrease of the unit cell's volume, the magnetic moment of chromium rapidly decreases and this affects the nearest neighborhood.


Fabrication of LiNbO<sub>3</sub> thin film by pulsed laser deposition and estimation of nonlinear property

[{u'author_order': 1, u'affiliation': u'Graduate Sch. of ISEE, Kyushu Univ., Fukuoka, Japan', u'full_name': u'S. Gunji'}, {u'author_order': 2, u'affiliation': u'Graduate Sch. of ISEE, Kyushu Univ., Fukuoka, Japan', u'full_name': u'Y. Shimizu'}, {u'author_order': 3, u'affiliation': u'Graduate Sch. of ISEE, Kyushu Univ., Fukuoka, Japan', u'full_name': u'Y. Nakata'}, {u'author_order': 4, u'affiliation': u'Graduate Sch. of ISEE, Kyushu Univ., Fukuoka, Japan', u'full_name': u'T. Okada'}, {u'author_order': 5, u'affiliation': u'Graduate Sch. of ISEE, Kyushu Univ., Fukuoka, Japan', u'full_name': u'M. Maeda'}] CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671), None

LiNbO3 thin films were deposited by pulsed-laser deposition (PLD) method. Crystalline and transparent films were deposited on sapphire substrate at 400 °C and in 100 mTorr of oxygen gas pressure. The nonlinear property was measured by SHG experiment.


More Xplore Articles

Educational Resources on Crystallization

Back to Top

eLearning

No eLearning Articles are currently tagged "Crystallization"

IEEE.tv Videos

No IEEE.tv Videos are currently tagged "Crystallization"

IEEE-USA E-Books

  • Effects of Melting on Faulting and Continental Deformation

    The presence of melt is closely related to the localization of deformation in faults and shear zones in a variety of tectonic settings. This relationship is observed on length scales from the outcrop to plate boundary faults to orogens. However, the question of whether melting induces localization, or localization creates a pathway for melts, can rarely be answered from field observations alone. Experimental studies show that rock strength decreases exponentially with increasing volume percentage of melt. This suggests that melting facilitates strain localization where deformation would be homogeneous in the absence of melt. Yet, the extrapolation of experimental relationships between rock strength and melt content to natural conditions at depth in the lithosphere remains speculative, largely because the grain-scale processes underlying dramatic weakening at small amounts of melt have yet to be investigated in crustal rocks. New geochronological methods for dating minerals that crystallized during deformation in the presence of melt have the potential to constrain the time lag between the onset of melting and deformation in naturally deformed anatectic rocks. An indirect, but clear answer to the question of whether melting induces strain localization on a regional scale comes from numerical models of orogenesis which can be run in the presence or absence of low-viscosity domains that approximate the mechanical behavior of partially melted rock. These models show that melting induces lateral flow of anatectic crust within horizontal channels usually situated at the base of the continental crust. These channels have strong vertical strain gradients, especially at their boundaries where shear zones accommodate lateral extrusion of the anatectic rock in between. Together with their bounding shear zones, these flow channels form a new class of faults, which we term " ;extrusional faults." Extrusional faults containing long-lived melt (tens of millions of years) can support large, broadly distributed topographic loads such as orogenic plateaus and can exhume deeply buried rocks from beneath orogens. In contrast, strike-slip and oblique-slip faults serve as steep conduits for the rapid ascent, differentiation, and crystallization of melt. The relatively short residence time of melts in such moderately to steeply dipping fault systems can lead to episodic motion, with long periods of creep punctuated by shorter periods of melt veining, magmatic activity, and/or faster slip.



Standards related to Crystallization

Back to Top

No standards are currently tagged "Crystallization"


Jobs related to Crystallization

Back to Top