Cryogenics

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In physics, cryogenics is the study of the production of very low temperature (below −150 °C, −238 °F or 123 K) and the behavior of materials at those temperatures. (Wikipedia.org)






Conferences related to Cryogenics

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2016 Particle Accelerator Conference (PAC)

Particle accelerator

  • 2015 IEEE International Particle Accelerator Conference (IPAC)

    The science, technology and engineering of all types of particle accelerator will be covered by invited speakers, contributed oral presentations and posters.

  • 2013 Particle Accelerator Conference (PAC)

    Topics on particle accelerators, oral and poster sessions. Conference proceedings published on DVD and JACoW website.

  • 2012 IEEE International Particle Accelerator Conference (IPAC)

    The science, technology and engineering of all types of particle accelerator will be covered by invited speakers, contributed oral presentations and posters. Awards will be made for outstanding work in the field and a special session will be devoted to student work. There will be an exhibition by related industrial manufacturers.

  • 2011 IEEE Particle Accelerator Conference (PAC)

    The primary scope of the 2011 Particle Accelerator Conference (PAC11) is to provide a forum for networking, communication and exchange of ideas among accelerator scientists, engineers, students and industry. The Scientific Program comprises invited speakers, contributed orals, poster sessions, an industrial forum, and a student program. The wide range of technical topics covered includes detectors, radiofrequency structures, vacuum, cryogenics, diagnostics, magnets and light sources.

  • 2009 IEEE Particle Accelerator Conference (PAC)

    The primary scope of Particle Accelerator Conferences (PAC) is to provide a forum for communication and exchange of ideas among accelerator scientists, engineers, students and industry. This week-long well-established conference series takes place biennially in North America. The Scientific Program comprises invited speakers, contributed orals, poster sessions, an Industrial Forum and a Student Program. PAC09 is committed to reaching out to young researchers in the field, and has set a budget to partially

  • 2007 IEEE Particle Accelerator Conference (PAC)


2012 European Microwave Conference (EuMC)

Microwave and millimeter wave: active/passive devices, antennas, electromagnetics, bio-interaction, circuits, manufacturing and measurement, MEMS, meta-materials, sensor networks, cognitive radio, 4G communications, space technology and applications.


2010 International Workshop on Low Temperature Electronics (WOLTE)

The objective of the Workshop is to provide an international forum for discussing recent research and development results in the area of low temperature electronics including, amongst others: Semiconductor devices at low temperatures Low and high Tc superconductor devices Cryogenic amplifiers Interfacing of superconducting circuitry by semiconductor Digital electronics at low temperatures, both semiconducting and superconducting (RSFQ) Quantum limited detectors and detector readou



Periodicals related to Cryogenics

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Nuclear Science, IEEE Transactions on

All aspects of the theory and applications of nuclear science and engineering, including instrumentation for the detection and measurement of ionizing radiation; particle accelerators and their controls; nuclear medicine and its application; effects of radiation on materials, components, and systems; reactor instrumentation and controls; and measurement of radiation in space.




Xplore Articles related to Cryogenics

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Radiation hardened SOS MOSFET technology for infrared focal plane readouts

F. J. Kub; C. T. Yao; J. R. Waterman IEEE Transactions on Nuclear Science, 1990

A silicon-on-sapphire (SOS) MOSFET technology with a body contact technique is shown to provide a reduced kink effect and no edge leakage for a 500 krad(Si) Co-60 dose at 80 K. The approach utilizes a conventional local oxidation of silicon (LOCOS) field implant process with a silicon conducting layer remaining beneath the field oxide. For the design, with the body ...


Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

J. Schleeh; G. Alestig; J. Halonen; A. Malmros; B. Nilsson; P. A. Nilsson; J. P. Starski; N. Wadefalk; H. Zirath; J. Grahn IEEE Electron Device Letters, 2012

We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low- noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise ...


Hole trap investigations in supplemental oxygen SIMOX wafers by opposite channel based charge injection

X. Zhao; F. L. Duan; A. Thanailakis; D. E. Ioannou; R. K. Lawrence; H. L. Hughes 1997 IEEE International SOI Conference Proceedings, 1997

It is well known that excess silicon exists in the buried oxide of SIMOX wafers, and that its presence introduces a variety of carrier traps at increased densities, as compared to thermal SiO2. To combat this, a supplemental oxygen implantation has been applied to finished SIMOX wafers for the reduction of excess Si in the BOX. Previous results from UV ...


RF control system for CEBAF

S. Simrock Conference Record of the 1991 IEEE Particle Accelerator Conference, 1991

The design goal of the 2.5*10/sup -5/ RMS energy spread for the CEBAF (Continuous Electron Beam Accelerator Facility) electron beam demands strict control of the phase and amplitude of the 1.5-GHz accelerating field. To achieve such control in the presence of microphonic excitations, a separate system for each of the 338 superconducting cavities is required. The RF control system employs ...


Superconducting cryogenic front end receivers

J. Mazierska 15th International Conference on Microwaves, Radar and Wireless Communications (IEEE Cat. No.04EX824), 2004

High temperature superconducting planar filters combined with cooled low noise amplifiers form low noise receivers with very sharp skirts and very low IL. These receivers when installed in cellular telephone base stations fill coverage gaps, provide reduced adjacent band interference and better capacity utilization, extend super speed to more users and the decrease number of drop out and blocked calls. ...


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Educational Resources on Cryogenics

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eLearning

Radiation hardened SOS MOSFET technology for infrared focal plane readouts

F. J. Kub; C. T. Yao; J. R. Waterman IEEE Transactions on Nuclear Science, 1990

A silicon-on-sapphire (SOS) MOSFET technology with a body contact technique is shown to provide a reduced kink effect and no edge leakage for a 500 krad(Si) Co-60 dose at 80 K. The approach utilizes a conventional local oxidation of silicon (LOCOS) field implant process with a silicon conducting layer remaining beneath the field oxide. For the design, with the body ...


Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

J. Schleeh; G. Alestig; J. Halonen; A. Malmros; B. Nilsson; P. A. Nilsson; J. P. Starski; N. Wadefalk; H. Zirath; J. Grahn IEEE Electron Device Letters, 2012

We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low- noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise ...


Hole trap investigations in supplemental oxygen SIMOX wafers by opposite channel based charge injection

X. Zhao; F. L. Duan; A. Thanailakis; D. E. Ioannou; R. K. Lawrence; H. L. Hughes 1997 IEEE International SOI Conference Proceedings, 1997

It is well known that excess silicon exists in the buried oxide of SIMOX wafers, and that its presence introduces a variety of carrier traps at increased densities, as compared to thermal SiO2. To combat this, a supplemental oxygen implantation has been applied to finished SIMOX wafers for the reduction of excess Si in the BOX. Previous results from UV ...


RF control system for CEBAF

S. Simrock Conference Record of the 1991 IEEE Particle Accelerator Conference, 1991

The design goal of the 2.5*10/sup -5/ RMS energy spread for the CEBAF (Continuous Electron Beam Accelerator Facility) electron beam demands strict control of the phase and amplitude of the 1.5-GHz accelerating field. To achieve such control in the presence of microphonic excitations, a separate system for each of the 338 superconducting cavities is required. The RF control system employs ...


Superconducting cryogenic front end receivers

J. Mazierska 15th International Conference on Microwaves, Radar and Wireless Communications (IEEE Cat. No.04EX824), 2004

High temperature superconducting planar filters combined with cooled low noise amplifiers form low noise receivers with very sharp skirts and very low IL. These receivers when installed in cellular telephone base stations fill coverage gaps, provide reduced adjacent band interference and better capacity utilization, extend super speed to more users and the decrease number of drop out and blocked calls. ...


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IEEE.tv Videos

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IEEE-USA E-Books

  • Attendee List

    Building a computer ten times more powerful than all the networked computing capability in the United States is the subject of this book by leading figures in the high performance computing community. It summarizes the near-term initiatives, including the technical and policy agendas for what could be a twenty-year effort to build a petaFLOP scale computer. (A FLOP -- Floating Point OPeration -- is a standard measure of computer performance and a PetaFLOP computer would perform a million billion of these operations per second.) Chapters focus on four interrelated areas: applications and algorithms, device technology, architecture and systems, and software technology.While a petaFLOPS machine is beyond anything within contemporary experience, early research into petaFLOPS system design and methodologies is essential to U.S. leadership in all facets of computing into the next century. The findings reported here explore new and fertile ground. Among them: construction of an effective petaFLOPS computing system will be feasible in two decades, although effectiveness and applicability will depend on dramatic cost reductions as well as innovative approaches to system software and programming methodologies; a mix of technologies such as semiconductors, optics, and possibly cryogenics will be required; and while no fundamental paradigm shift in system architecture is expected, active latency management will be essential, requiring a high degree of fine-grain parallelism and the mechanisms to exploit it.Scientific and Engineering Computation series

  • Back Matter

    Building a computer ten times more powerful than all the networked computing capability in the United States is the subject of this book by leading figures in the high performance computing community. It summarizes the near-term initiatives, including the technical and policy agendas for what could be a twenty-year effort to build a petaFLOP scale computer. (A FLOP -- Floating Point OPeration -- is a standard measure of computer performance and a PetaFLOP computer would perform a million billion of these operations per second.) Chapters focus on four interrelated areas: applications and algorithms, device technology, architecture and systems, and software technology.While a petaFLOPS machine is beyond anything within contemporary experience, early research into petaFLOPS system design and methodologies is essential to U.S. leadership in all facets of computing into the next century. The findings reported here explore new and fertile ground. Among them: construction of an effective petaFLOPS computing system will be feasible in two decades, although effectiveness and applicability will depend on dramatic cost reductions as well as innovative approaches to system software and programming methodologies; a mix of technologies such as semiconductors, optics, and possibly cryogenics will be required; and while no fundamental paradigm shift in system architecture is expected, active latency management will be essential, requiring a high degree of fine-grain parallelism and the mechanisms to exploit it.Scientific and Engineering Computation series

  • Bibliography

    Building a computer ten times more powerful than all the networked computing capability in the United States is the subject of this book by leading figures in the high performance computing community. It summarizes the near-term initiatives, including the technical and policy agendas for what could be a twenty-year effort to build a petaFLOP scale computer. (A FLOP -- Floating Point OPeration -- is a standard measure of computer performance and a PetaFLOP computer would perform a million billion of these operations per second.) Chapters focus on four interrelated areas: applications and algorithms, device technology, architecture and systems, and software technology.While a petaFLOPS machine is beyond anything within contemporary experience, early research into petaFLOPS system design and methodologies is essential to U.S. leadership in all facets of computing into the next century. The findings reported here explore new and fertile ground. Among them: construction of an effective petaFLOPS computing system will be feasible in two decades, although effectiveness and applicability will depend on dramatic cost reductions as well as innovative approaches to system software and programming methodologies; a mix of technologies such as semiconductors, optics, and possibly cryogenics will be required; and while no fundamental paradigm shift in system architecture is expected, active latency management will be essential, requiring a high degree of fine-grain parallelism and the mechanisms to exploit it.Scientific and Engineering Computation series

  • Supplementary Study on Gate-Controlled Bipolar Action in the Ultra-Thin Dynamic Threshold SOI MOSFET

    This chapter introduces significant aspects of low-temperature minority- carrier injection in the n-channel dynamic threshold (DT) MOSFET with various silicon-on-insulator (SOI) layer thicknesses. Drain current versus gate voltage and gate current versus gate voltage characteristics are evaluated at temperatures ranging from 300 K to 30 K, and minority-carrier injection is characterized. The impacts of temperature, channel length, and silicon-on- insulator layer thickness on opposite drain current behavior are discussed by examining the transconductance characteristics. [Reprinted from Cryogenics, vol. 49, Y. Omura and T. Tochio, Significant aspects of minority carrier injection in dynamic-threshold SOI MOSFET at low temperature, pp. 611-614, Copyright 2009, with permission from Elsevier.]



Standards related to Cryogenics

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No standards are currently tagged "Cryogenics"