Conferences related to Design Of Experiments (DOE)

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2015 Annual Reliability and Maintainability Symposium (RAMS)

This conf covers all facets of the assurance sciences.


2015 IEEE International Reliability Physics Symposium (IRPS)

Sharing information related to cause, effects and solutions in the deign and manufacture of electronics and related components


2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms


2013 IEEE International Integrated Reliability Workshop (IIRW)

We invite you to submit a presentation proposal that addresses any semiconductor related reliability issue, including the following topics: resistive memories, high-k and nitrided SiO2 gate dielectrics, reliability assessment of novel devices, III-V, SOI, emerging memory technologies, transistor reliability including hot carriers and NBTI/PBTI, root cause defects (physical mechanisms and simulations), Cu interconnects and low-k dielectrics, impact of transistor degradation on circuit reliability, designing-in reliability (products, circuits,systems, processes), customer product reliability requirements / manufacturer reliability tasks, waferlevel reliability tests (test approaches and reliability test structures), reliability modeling and simulation,optoelectronics, and single event upsets.

  • 2012 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems.

  • 2011 IEEE International Integrated Reliability Workshop (IIRW)

    The IRW focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems through tutorials, paper presentations, discussion groups and special interest groups.

  • 2010 IEEE International Integrated Reliability Workshop (IIRW)

    The Integrated Reliability Workshop focuses on ensuring electronic device reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology and test methodology for present and f

  • 2009 IEEE International Integrated Reliability Workshop (IRW)

    Semiconductor Reliability in general; and Wafer Level Reliability in specific. Covering areas like (but not limited to): Design-in Reliability, reliability characterization, deep sub-micron transistor and circuit reliability, customer reliability requirements, wafer level reliability tests, and reliability root cause analysis, etc.

  • 2008 IEEE International Integrated Reliability Workshop (IRW)

    The workshop focuses on ensuring device reliability through fabrication, design, testing, characterization and simulation as well as identification of the defects and mechanisms responsible for reliability problems. It provides a unique environment for understanding, developing and sharing reliability technology and test methodology.

  • 2007 IEEE International Integrated Reliability Workshop (IRW)

    The Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliabilty problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding and developing reliability technology and test methodology.


2012 23rd European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - ESREF 2012

This international symposium continues to focus on recent developments and future directions in quality and reliability management of materials, devices and circuits for micro, nano, and optoelectronics. It provides a European forum for developing all aspects of reliability management and innovative analysis techniques for present and future electronic applications.


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Periodicals related to Design Of Experiments (DOE)

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Reliability, IEEE Transactions on

Principles and practices of reliability, maintainability, and product liability pertaining to electrical and electronic equipment.


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.




Xplore Articles related to Design Of Experiments (DOE)

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Using the design of experiments (DoE) method to elaborate an electrical ageing model for the insulation of low voltage rotating machines fed by inverters

Lahoud, N.; Manh Quan Nguyen; Maussion, P.; Malec, D.; Mary, D. Solid Dielectrics (ICSD), 2010 10th IEEE International Conference on, 2010

A large amount of parameters related to both operating conditions and material design affects the electrical ageing of the low voltage rotating machine insulation. Accelerated ageing tests are usually undertaken in order to develop a theory to describe the electrical ageing process and to determine a lifetime model of these materials. However, to the best of our knowledge, there is ...


Automated system infrastructure to facilitate design of experiments (DOE) data analysis

Tandon, N.; Baweja, G. Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop, 2002

The complex semiconductor fabrication process needs to be optimized quickly to increase process yield and efficiency in fab operations. The Design of Experiments (DOE) technique is frequently applied in semiconductor domain by separating a wafer lot into wafer splits, and studying the effects of varying process parameters in relation to a baseline split across diffusion, photo, etch and other fabrication ...


Optimization of 3D multilayer RF components using the design of experiments (DOE) technique

Bushyager, N.; Staiculescu, D.; Obatoyinbo, A.; Martin, L.; Tentzeris, M.M. Microwave Symposium Digest, 2004 IEEE MTT-S International, 2004

The successful use of the design of experiments (DOE) approach in an optimization feasibility study for two microwave balanced to unbalanced transformers (baluns) is presented. The medium of interest is the multi-layer low temperature cofired ceramic (LTCC) and two different topologies, one microstrip and one stripline, are investigated. The design goals are perfectly balanced outputs from 2-3 GHz and a ...


Electrical ageing modeling of the insulation of low voltage rotating machines fed by inverters with the design of experiments (DoE) method

Lahoud, N.; Faucher, J.; Malec, D.; Maussion, P. Diagnostics for Electric Machines, Power Electronics & Drives (SDEMPED), 2011 IEEE International Symposium on, 2011

In the context of more electric aircrafts, the reliability of the low voltage insulation systems in rotating machines is an important issue. But, modeling and understanding their electrical ageing is a complex phenomenon especially when they are fed by PWM inverter. They involve a large amount of parameters related to both operating conditions and material design, which act together. Accelerated ...


Design of experiments (DOE) analysis of a feed-forward amplifier system for wireless applications

Maurin, David; Ke Wu Microwave Conference Proceedings, 1997. APMC '97, 1997 Asia-Pacific, 1997

A Design of Experiments (DOE) analysis of a feed-forward amplifier system is presented. The frequency behavior of feed-forward components is for the first time considered in the analysis. It is shown that, for the simulation and specification of a feed-forward system, it is possible to include the amplitude and frequency dispersion of the components in the tolerance specification of the ...


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