Copper

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Copper is a chemical element with the symbol Cu and atomic number 29. (Wikipedia.org)






Conferences related to Copper

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2017 IEEE 67th Electronic Components and Technology Conference (ECTC)

premier components, packaging and technology conference

  • 2019 IEEE 69th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2016 IEEE 66th Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

    Premier components, packaging and technology

  • 2013 IEEE 63rd Electronic Components and Technology Conference (ECTC)

    premier components, packaging and technology conference

  • 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2011 IEEE 61st Electronic Components and Technology Conference (ECTC)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2010 IEEE 60th Electronic Components and Technology Conference (ECTC 2010)

    ECTC is the premier international electronics symposium that brings together the best in packaging, components and microelectronic systems science, technology and education in an environment of cooperation and technical exchange.

  • 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009)

    Advanced packaging, electronic components & RF, emerging technologies, materials & processing, manufacturing technology, interconnections, quality & reliability, modeling & simulation, optoelectronics.

  • 2008 IEEE 58th Electronic Components and Technology Conference (ECTC 2008)


2013 14th International Conference on Electronic Packaging Technology (ICEPT)

ICEPT 2013 is a four-day event, featuring technical sessions, invited talks, professional development courses/forums, exhibition, and social networking activities. It aims to cover the latest technological developments in electronic packaging, manufacturing and packaging equipment, and provide opportunities to explore the trends of research and development, as well as business in China.


2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Sample Preparation, Metrology and Material Characterization Advanced Failure Analysis Techniques Die-Level / Package-Level Failure Analysis Case Study & Failure Mechanisms Product Reliability Evaluation and ApproachesNovel Device Reliability and Failure MechanismsNovel Gate Stack/Dielectrics and FEOL Reliability and Failure MechanismsAdvanced Interconnects and BEOL Reliability and Failure Mechanisms


2012 IEEE International Interconnect Technology Conference - IITC

The IITC provides a forum for professionals and researchers in semiconductor processing, advanced materials, equipment development, and interconnect systems to present and discuss exciting new science and technology


2009 International Conference on Energy and Environment Technology (ICEET)

The main topics are listed as follows: Energy efficency and management power generation technology power technology and application water,air pollution and protection


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Periodicals related to Copper

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Advanced Packaging, IEEE Transactions on

The IEEE Transactions on Advanced Packaging has its focus on the modeling, design, and analysis of advanced electronic, photonic, sensors, and MEMS packaging.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Dielectrics and Electrical Insulation, IEEE Transactions on

Electrical insulation common to the design and construction of components and equipment for use in electric and electronic circuits and distribution systems at all frequencies.



Most published Xplore authors for Copper

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Xplore Articles related to Copper

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Preliminary test and evaluation of non-destructive examination for ITER First Wall development in Korea

Suk-Kwon Kim; Eo Hwak Lee; Jae-Sung Yoon; Hyun-Kyu Jung; Dong Won Lee; Byoung-Yoon Kim 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

ITER First Wall (FW) includes beryllium armour joined to a Cu heat sink with a stainless steel back plate. These first wall panels are one of the critical components in the ITER tokamak with a maximum surface heat flux of 5 MW/m2. So, a qualification test needs to be performed with the goal to qualify the joining technologies required for ...


R & D of polyimide insulated JET ELM control coils for operation at 350 C

I. J. Zatz; G. H. Neilson; S. Jurczynski; M. Mardenfeld; C. Lowry 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

A study has confirmed the feasibility of designing, fabricating and installing resonant magnetic field perturbation (RMP) coils in JET with the objective of controlling edge localized modes (ELM). These coils present several engineering challenges. Conditions in JET necessitate the installation of these coils via remote handling, which will impose weight, dimensional and logistical limitations. And while the encased coils are ...


An Overmoded W-Band Coupled-Cavity TWT

Elizabeth J. Kowalski; Michael A. Shapiro; Richard J. Temkin IEEE Transactions on Electron Devices, 2015

A 94-GHz overmoded traveling-wave tube (TWT) has been designed, fabricated, and successfully tested. The TWT operates in the rectangular TM31 mode of the cavity, while lower order modes are suppressed using selectively placed strips of lossy dielectric. The 87-cavity TWT circuit was directly machined from Glidcop, a dispersion-hardened copper. The TWT was tested in a 0.25 T solenoidal magnetic field ...


Laser ablation of YBCO: utilizing /sup 18/O to investigate the incorporation of oxygen into the laser plume

S. C. Tidrow; W. D. Wilber; M. Z. Tidrow IEEE Transactions on Applied Superconductivity, 1993

/sup 18/O has been used as a tracer to measure the transfer of oxygen from the chamber atmosphere into the laser induced plume. The amount of oxygen incorporated into the plume was found by laser ablating from a polycrystalline YBCO target onto a room temperature carbon substrate in an atmosphere of 50% /sup 16/O and 50% /sup 18/O. A series ...


Au-Sn fluxless SLID bonding: Effect of bonding temperature for stability at high temperature, above 400 °C

Knut E. Aasmundtveit; Thi Thuy Luu; Hoang-Vu Nguyen; Rolf Johannessen; Nils Hoivik; Kaiying Wang 3rd Electronics System Integration Technology Conference ESTC, 2010

Fluxless SLID (Solid-Liquid InterDiffusion) bonding based on Au and Sn is presented, using two different processes, and bonding temperatures in the range 300-350°C. The decomposition of the bond was tested by applying shear force while heating the samples. No bond delamination was observed for temperatures up to 350-400°C, with 95% of the tested samples surviving 400°C without bond delamination. This ...


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Educational Resources on Copper

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eLearning

Preliminary test and evaluation of non-destructive examination for ITER First Wall development in Korea

Suk-Kwon Kim; Eo Hwak Lee; Jae-Sung Yoon; Hyun-Kyu Jung; Dong Won Lee; Byoung-Yoon Kim 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

ITER First Wall (FW) includes beryllium armour joined to a Cu heat sink with a stainless steel back plate. These first wall panels are one of the critical components in the ITER tokamak with a maximum surface heat flux of 5 MW/m2. So, a qualification test needs to be performed with the goal to qualify the joining technologies required for ...


R & D of polyimide insulated JET ELM control coils for operation at 350 C

I. J. Zatz; G. H. Neilson; S. Jurczynski; M. Mardenfeld; C. Lowry 2011 IEEE/NPSS 24th Symposium on Fusion Engineering, 2011

A study has confirmed the feasibility of designing, fabricating and installing resonant magnetic field perturbation (RMP) coils in JET with the objective of controlling edge localized modes (ELM). These coils present several engineering challenges. Conditions in JET necessitate the installation of these coils via remote handling, which will impose weight, dimensional and logistical limitations. And while the encased coils are ...


An Overmoded W-Band Coupled-Cavity TWT

Elizabeth J. Kowalski; Michael A. Shapiro; Richard J. Temkin IEEE Transactions on Electron Devices, 2015

A 94-GHz overmoded traveling-wave tube (TWT) has been designed, fabricated, and successfully tested. The TWT operates in the rectangular TM31 mode of the cavity, while lower order modes are suppressed using selectively placed strips of lossy dielectric. The 87-cavity TWT circuit was directly machined from Glidcop, a dispersion-hardened copper. The TWT was tested in a 0.25 T solenoidal magnetic field ...


Laser ablation of YBCO: utilizing /sup 18/O to investigate the incorporation of oxygen into the laser plume

S. C. Tidrow; W. D. Wilber; M. Z. Tidrow IEEE Transactions on Applied Superconductivity, 1993

/sup 18/O has been used as a tracer to measure the transfer of oxygen from the chamber atmosphere into the laser induced plume. The amount of oxygen incorporated into the plume was found by laser ablating from a polycrystalline YBCO target onto a room temperature carbon substrate in an atmosphere of 50% /sup 16/O and 50% /sup 18/O. A series ...


Au-Sn fluxless SLID bonding: Effect of bonding temperature for stability at high temperature, above 400 °C

Knut E. Aasmundtveit; Thi Thuy Luu; Hoang-Vu Nguyen; Rolf Johannessen; Nils Hoivik; Kaiying Wang 3rd Electronics System Integration Technology Conference ESTC, 2010

Fluxless SLID (Solid-Liquid InterDiffusion) bonding based on Au and Sn is presented, using two different processes, and bonding temperatures in the range 300-350°C. The decomposition of the bond was tested by applying shear force while heating the samples. No bond delamination was observed for temperatures up to 350-400°C, with 95% of the tested samples surviving 400°C without bond delamination. This ...


More eLearning Resources

IEEE-USA E-Books

  • Review and Analysis of LeadFree Solder Material Properties

    This chapter contains sections titled: Introduction Tin-Lead Properties and Models Tin-Silver Properties and Creep Data Tin-Silver-Copper Properties and Creep Data Alloy Comparisons General Conclusions/Recommendations Appendix A: Tin-Silver Creep Data Appendix B: Tin-Silver-Copper Creep Data Acknowledgments References

  • Copper Physical Layers

    This chapter contains sections titled: Introduction Overview of the chapter Who will benefit from reading this chapter The premise of Ethernet over telephone wire Relationship to ATIS, ETSI, and ITU-T The need for two modulation techniques Layering and sublayer interfaces Physical coding sublayer (PCS) functions Transmission convergence (TC) sublayer functions Management Summary of the concepts presented in this chapter For further reference

  • High Temperature Aluminum Nitride Packaging

    As is often the case, advances in electronics are dictated not by the IC devices themselves, but by the ability to package those devices. This is certainly the case for high temperature electronics. The limits of conventional packaging materials such as glass-epoxy circuit boards, plated copper traces and Sn-Pb solder are obvious at temperatures in excess of 300°C. Even standard ceramic packages based on Al2O3 are inadequate above 300°C. Novel materials and assembly techniques required for high temperature operation are presented in this paper. Factors such as thermal conductivity, expansion coefficients, oxidation and diffusion become more critical as operating temperatures increase, and therefore play major roles in determining package construction techniques. The evolution of high temperature package construction will be reviewed in light of these constraints. High temperature packages have been developed based on aluminum nitride (AIN) substrates and nickel metallization. Key features of the packages described in this paper are molded AIN bodies, directly bonded low temperature cofired ceramic (LTCC) frames and silver active braze seals, all of which contribute to producing hermetic packages at high temperatures. A discussion of interconnect metallurgies and attachment methods is included. Test data demonstrating the reliability of AIN high temperature packages will also be presented.

  • Appendix IV: Physical Constants and Other Data

    This appendix contains sections titled: Physical Constants Conductivities of Materials Dielectric Constants of Materials Skin Depth in Copper

  • Cable Design Guidelines

    This chapter contains sections titled: Materials in Contact with Each Other Should Be Close in the Electrochemical Series The Anodic Material (More Positive) Should Be Larger than the Cathodic Material The Contact Shouldn't Have a Constant Current Flow Use Cathodic Materials, If Possible Air Separations from Chassis Wires or Connector Pins to Other Lines Should Be At Least 2.2 mm to Prevent Arcing Use Shielded Cables and Connect Chassis Ground to the Shield Cable Shields Should Be At Least 0.025 mm Thick (Over the Range of 1 MHz to 5 GHz, Copper or Aluminum Doesn't Have to Be Very Thick to Provide Shielding) Cable Shields Must Have a High Frequency Connection to the Chassis on Both Ends of the Cable The Cable Shield Should Connect to the Chassis at the Cable Entry Point, and the Unshielded Portion of the Cable Must Be Kept to a Minimum If There Is No Chassis at One End of the Cable, Design in an Option to Connect the Cable Shield to Logic Ground via a High Frequency Capacitor The ESD Current Path Should Not Be Included in the Ferrite with Other Lines (It Is Best if the ESD Path Doesn't Flow Through Any Ferrites) If a Ferrite Bead Is Used on Cable Signal Lines, It Will Be Most Effective when Placed at the Receiver End of the Signal Line, So It Can Filter Out Noise Picked Up on the Signal Line Extra Lines in a Cable Must Be Either Clipped Off or Connected Properly Flat Cables Should Have a Logic Ground Line Beside Every Other Line, and Sensitive Signal Lines Should Be in the Center Conductors This chapter contains sections titled: Summary of Cable Design Guidelines

  • Copper Physical Layer signalling

    This chapter contains sections titled: Introduction Overview of the chapter Who will benefit from reading this chapter 10PASS-TS (Ethernet over VDSL) 2BASE-TL (Ethernet over SHDSL) Summary of concepts covered in this chapter Additional references

  • IronNickel Alloys

    This chapter contains sections titled: Binary Iron-Nickel Alloys Commercial Binary Alloys Iron-Nickel-Molybdenum Alloys Iron-Nickel-Chromium Alloys Iron-Nickel-Copper Alloys Iron-Cobalt-Nickel Alloys Other Iron-Nickel Alloys

  • Group IV Alloys for Advanced Nano??? and Optoelectronic Applications

    Mainstream semiconductor technology builds on elements of group IV within the periodic table. Crystalline silicon remains the principal base material, whereas germanium and carbon have entered the mainstream in the embedded source/drain technology, as well as in heterojunction bipolar transistors (HBTs) used in BiCMOS technology. Recently, it has been shown that alloying Ge with Sn enables the fabrication of fundamental direct bandgap group IV semiconductors, as well as optically pumped GeSn lasers grown on Si. This achievement pave the route toward efficient and monolithically integrated group IV light emitters, that is, lasers, for electronic???photonic integrated circuits (EPICs) that could solve the emerging power consumption crisis in complementary metal???oxide semiconductor (CMOS) technology by enabling optical on???chip and chip???to???chip data transfer. The large parasitic capacitances introduced by various layers of copper (Cu) interconnects demand high transistor ION currents, which could be reduced if some of the Cu lines are replaced by optical interconnects.

  • High Frequency Simulation and Characterization of Advanced Copper Interconnects

    In this paper we evaluate impact of Copper on high frequency (HF) behavior for deep submicron interconnects. Especially we compare Aluminum vs. Copper structures and study association of Copper with low-k dielectrics. Firstly we proceed electromagnetic (EM) and electrical simulations to determine the necessary level of modeling. In a second step we make time domain characterization on dedicated devices. In this study we measure the effective benefit of Copper and low-k on crosstalk.

  • Level III HV Protection Equipment, Installation, and Testing

    This chapter contains sections titled: General Level III Copper HVI Components Copper HVI System Design Copper HVI Installation Examples Copper HVI System Initial Testing Copper HVI Maintenance and Inspection Fiber HVI Systems Installation Fiber HVI Installation Examples Wireless Sites on Electrical Power Towers Protection at Non-Power Company Locations



Standards related to Copper

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No standards are currently tagged "Copper"