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2015 IEEE International Conference on Plasma Sciences (ICOPS)
Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.
Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.
Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...
Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.
Kaliszuk, K.; Frydman, K.; Wojcik-Grzybek, D.; Bucholc, W.; Walczuk, E.; Borkowski, P.; Zasada, D. Electrical Contacts, 2004. Proceedings of the 50th IEEE Holm Conference on Electrical Contacts and the 22nd International Conference on Electrical Contacts, 2004
This work presents investigation results of surface structures formed on contacts made of Ag-WC composite materials during arc operation on breaking currents 6 kA. The contacts were made using the method of sintering compacts from mixtures of Ag and WC powders. Electrical tests were carried out under standardized conditions. In the paper, the results of SEM investigations are presented for ...
Koike, H.; Unno, Y.; Ishimaru, K.; Matsuoka, F.; Kakumu, M. Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International, 1994
An enlarged grain dual polycide gate and a dual buried contact technology using regrown amorphous-Si have been developed for high density full-CMOS SRAM cell. Lateral dopant diffusion has been suppressed to be less than 0.2 /spl mu/m, as a result, 0.4 /spl mu/m nMOS/pMOS spacing was realized using an 850/spl deg/C process. This technology can also achieve dual buried contact ...
Ionescu, A.M.; Munteanu, D.; Chovet, A.; Rusu, A.; Steriu, D. Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International, 1997
In situ electrical characterization is extremely important for SOI wafer fabrication because it allows material evaluation prior to any device processing. The aim of this paper is to report on the development of the intrinsic pseudo-MOSFET electrical characterization method (4-point probe method), which significantly improves the precision of the electrical parameter determination for SOI wafers. A thorough comparison between the ...
Aziz, A.A.; Missous, M. High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO, 1996
We report in here about the first pseudomorphic InGaP/InGaAs/GaAs HEMT demonstrator using an all solid source MBE technique. The quality of thick InGaP is found comparable to state of the art InGaP material grown by other methods. When inserted as part of a pHEMT structure, we found a very large etch selectivity of GaAs over InGaP using H3 PO4:H2O2:H2O solution. ...
Leung, Chi H.; Streicher, E.; Fitzgerald, D. Electrical contacts - 2007, the 53rd ieee holm conference on, 2007
Silver/tungsten powder metal electric contacts are used in circuit breakers because of their combination of high conductivity from silver, and high melting temperature from tungsten. In operations of the circuit breaker, switching arcs erode and oxidize the contact surface to create a high resistance layer that can lead to high temperature at the contacts. This arc erosion product is usually ...
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