Contact resistance

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The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power


2012 IEEE 58th Holm Conference on Electrical Contacts (Holm 2012)

Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.


TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.



Periodicals related to Contact resistance

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.




Xplore Articles related to Contact resistance

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Dual polycide gate and dual buried contact technologies achieving a 0.4 /spl mu/m nMOS/pMOS spacing for a 7.65 /spl mu/m/sup 2/ full-CMOS SRAM cell

Koike, H.; Unno, Y.; Ishimaru, K.; Matsuoka, F.; Kakumu, M. Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International, 1994

An enlarged grain dual polycide gate and a dual buried contact technology using regrown amorphous-Si have been developed for high density full-CMOS SRAM cell. Lateral dopant diffusion has been suppressed to be less than 0.2 /spl mu/m, as a result, 0.4 /spl mu/m nMOS/pMOS spacing was realized using an 850/spl deg/C process. This technology can also achieve dual buried contact ...


InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE

Aziz, A.A.; Missous, M. High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO, 1996

We report in here about the first pseudomorphic InGaP/InGaAs/GaAs HEMT demonstrator using an all solid source MBE technique. The quality of thick InGaP is found comparable to state of the art InGaP material grown by other methods. When inserted as part of a pHEMT structure, we found a very large etch selectivity of GaAs over InGaP using H3 PO4:H2O2:H2O solution. ...


Welding of Au microwires by femtosecond laser irradiation

Ly, N.; Mayer, M.; Ramadhan, A.; Sanderson, J. Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on, 2014

An alternative wire joining method is explored that utilizes femtosecond laser pulses directed towards the contact point of two pieces of 25-μm diameter Au bonding wires typically used in microelectronic wire bonding. The two pieces are in the form of wire loops bonded onto four terminals in a crossing pattern. In-situ four-wire measurement is used to measure the contact resistance ...


Impact of contact and local interconnect scaling on logic performance

Datta, S.; Pandey, R.; Agrawal, A.; Gupta, S.K.; Arghavani, R. VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on, 2014

We perform a comparative analysis of metal-Si and metal-insulator-Si (MIS) contacts and quantify the impact of the contact/via resistances on logic performance. Our results show that silicide contacts account for 32% degradation in the ON current of an nFinFET (ION) compared to ideal contact. MIS contacts which lead to lowering of Schottky barrier height provide 12% performance gain at iso-energy. ...


Low-resistance ohmic contacts for microwave and lightwave devices

Verlangieri, P.A.; Kuznetsov, M.; Schneider, M.V. Microwave and Guided Wave Letters, IEEE, 1991

The fabrication of low-resistance ohmic contacts to n- and p-type compound semiconductor layers is reported. Each contact consists of a five-layer structure of evaporated metal that is alloyed at a critical temperature. Measurements of the alloyed contacts showed resistances in the 10/sup -7/- Omega -cm/sup 2/ range, which is lower than previously obtained results from conventional three-layer metallization systems produced ...


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