Contact resistance

View this topic in
The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

Back to Top

2020 IEEE International Symposium on Applications of Ferroelectrics (ISAF)

Ferroelectric materials and applications


2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

The world's premiere conference in MEMS sensors, actuators and integrated micro and nano systems welcomes you to attend this four-day event showcasing major technological, scientific and commercial breakthroughs in mechanical, optical, chemical and biological devices and systems using micro and nanotechnology.The major areas of activity in the development of Transducers solicited and expected at this conference include but are not limited to: Bio, Medical, Chemical, and Micro Total Analysis Systems Fabrication and Packaging Mechanical and Physical Sensors Materials and Characterization Design, Simulation and Theory Actuators Optical MEMS RF MEMS Nanotechnology Energy and Power


2018 13th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premierEuropean technical conference for RF microelectronics. Aim of the conference is to promote thediscussion of recent developments and trends, and to encourage the exchange of scientific andtechnical information covering a broad range of high-frequency related topics, from materialsand technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything aboutmicrowave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latestadvances in the field and meet recognized experts from both Industry and Academia.

  • 2017 12th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

The ITherm Conference series is the leading international venue for scientific and engineering exploration ofthermal, thermomechanical, and emerging technology issues associated with electronic devices, packages, and systems.


2018 18th International Workshop on Junction Technology (IWJT)

IWJT is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors.


More Conferences

Periodicals related to Contact resistance

Back to Top

Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Device and Materials Reliability, IEEE Transactions on

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuses on the reliability of electronic, optical, and magnetic devices, and microsystems; the materials and processes used in the ...


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


More Periodicals

Most published Xplore authors for Contact resistance

Back to Top

Xplore Articles related to Contact resistance

Back to Top

Transmission of voltage signals through serially connected relay contacts

[{u'author_order': 1, u'affiliation': u'Dept. of Electroenergetic Syst., Univ. Edvard Kardelj Ljubljana, Yugoslavia', u'full_name': u'M. Bizjak'}] IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1991

When more than one switching contact in series transmits electric signals, the high-resistance tail of the contact resistance distribution function has an influence on the voltage fall statistics of the contact series. Due to this effect, the reduction of voltage-fall on the receiver can result in reduced reliability of its operation. When the behavior of contact series is concerned, some ...


Selective TiSi<sub>2</sub> by CVD, one step further

[{u'author_order': 1, u'affiliation': u'France Telecom - CNET Grenoble', u'full_name': u'D. Maury'}, {u'author_order': 2, u'full_name': u'J. L. Regolini'}] European Workshop Materials for Advanced Metallization,, None

First Page of the Article ![](/xploreAssets/images/absImages/00887527.png)


Optimization of series resistance in sub-0.2 &#x003BC;m SOI MOSFET's

[{u'author_order': 1, u'affiliation': u'Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA', u'full_name': u'L. T. Su'}, {u'author_order': 2, u'affiliation': u'Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA', u'full_name': u'M. J. Sherony'}, {u'author_order': 3, u'affiliation': u'Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA', u'full_name': u'Hang Hu'}, {u'author_order': 4, u'affiliation': u'Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA', u'full_name': u'J. E. Chung'}, {u'author_order': 5, u'affiliation': u'Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA', u'full_name': u'D. A. Antoniadis'}] IEEE Electron Device Letters, 1994

The optimization of device series resistance in ultrathin film SOI devices is studied through 3-D simulations and process experiments. The series resistance is dependent on the contact resistivity of the silicide to silicon and the silicide geometry. To achieve low series resistance, very thin silicides that do not fully consume the SOI film are needed. A novel cobalt salicidation technology ...


Fretting in Ni-coated aluminum conductors

[{u'author_order': 1, u'affiliation': u"Inst. de Recherche d'Hydro-Quebec, Varennes, Que., Canada", u'full_name': u'M. Braunovic'}] IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1991

The degradation of nickel-coated aluminum conductors in contact with aluminum, copper, nickel, and tin under fretting conditions has been studied. In addition to contact resistance measurements, scanning electron microscopy (SEM) and X-ray fluorescence (EDX) analysis were used to study the process involved. The fretting tests were carried out with a simulated connector configuration at a frequency of oscillation of 1 ...


Modeling and characterization of SIPOS passivated, high voltage, N- and P-channel lateral resurf type DMOSFETs

[{u'author_order': 1, u'affiliation': u'Rensselaer Polytechnic Institute', u'full_name': u'T. Sakai'}, {u'author_order': 2, u'full_name': u'K. C. So'}, {u'author_order': 3, u'full_name': u'Z. Shen'}, {u'author_order': 4, u'full_name': u'T. P. Chow'}] Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics, None

First Page of the Article ![](/xploreAssets/images/absImages/00991288.png)


More Xplore Articles

Educational Resources on Contact resistance

Back to Top

eLearning

No eLearning Articles are currently tagged "Contact resistance"

IEEE.tv Videos

On the Characterization of Thermal Coupling Resistance in a Current Mirror: RFIC Industry Showcase 2016
IMS 2014: Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material
IEEE Meetings, Conferences & Events Team Can Help You Build a Successful Conference
Materials Challenges for Next-Generation, High-Density Magnetic Recording - Kazuhiro Hono: IEEE Magnetics Distinguished Lecture 2016
Virtual Reality Support for Teleoperation Using Online Grasp Planning
The Josephson Effect: The Josephson Volt
HKN Member Hermann W. Dommel Receives an Award at the 2014 EAB Award Ceremony
HKN Member Changzhi Li Receives an Award at the 2014 EAB Award Ceremony
ICRA Plenary: Raffaello D'Andrea
Accelerating Machine Learning with Non-Volatile Memory: Exploring device and circuit tradeoffs - Pritish Narayanan: 2016 International Conference on Rebooting Computing
HKN Member Marcian E. "Ted" Hoff Receives Award at the 2012 EAB Award Ceremony
HKN Member: Dirk Robert Englund Receives Award at 2012 EAB Awards Ceremony
Mapping Human to Robot Motion with Functional Anthropomorphism for Teleoperation and Telemanipulation with Robot Arm Hand Systems
HKN Member Preethika Kumar Receives Award at 2015 EAB Awards Ceremony
Awareness and Prevention of Electrical Accidents (in Telugu with English subtitles)
All You Wanted to Know About Chinese Manufacturing But Were Afraid to Ask
HKN Member Asad M. Madni Receives Award at 2015 EAB Awards Ceremony
APEC 2011- Methode Electronics at APEC 2011
Care Innovations: WEEE and RoHs(e-waste recycling and disposal)
HKN Member Ray Kurzweil Receives Award at 2014 EAB Awards Ceremony

IEEE-USA E-Books

  • Contact Resistance and Schottky Barriers

  • Resistance Spot Welding:Fundamentals and Applications for the Automotive Industry

    The early chapters of this book provide thorough coverage of resistance spot welding fundamentals and principles. Topics covered include lobe and current range curves, contact resistance vs. electrode force, dynamic resistance, heat balance, nugget growth, etc. Equipment issues such as machine types, power supplies, and electrodes are addressed. Subsequent chapters focus on specific spot welding challenges to modern automotive manufacturing. Approaches to welding modern materials including advanced high strength steels, coated steels, and aluminum alloys are covered in much detail. The final chapters focus on many common production and quality control issues, such as electrode wear, monitoring and testing, computational modeling, and welding codes. The overall goal of the book is to provide a comprehensive resource for automotive engineers and technicians who work with modern spot welding equipment and automotive materials.

  • High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues

    Refractory metals (Ti, Mo, Wand Ta) with precious metal overlayers (Au and Pt) were used to form ohmic contacts to polycrystalline boron doped chemically vapour deposited diamond films. Refractory metals afford high resistance to thermal and environmenal stresses. In addition, many refractory metals show a chemical affinity for carbon, resulting in the formation of a metal-carbide reaction layer with reduced Schottky barrier height at the contact interface. Low resistance ohmic contacts can be formed by heavy boron doping of the diamond film in the contact region. The viability and reliability of various refractory metal contact schemes were assessed to determine their upper operating temperatures and life expectancies in hostile environments. Reverse engineering of the contacts and detailed material analysis revealed likely failure mechanisms. It was found that Mo/Au gave the highest degree of thermal stability, while Ti gave the lowest contact resistance. The contact resistance was strongly dependent on the doping level of the diamond film

  • HighTemperature Ohmic and Schottky Contacts to NType 6HSiC Using Nickel

    We report specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 773 K and yielded values > 5 x 10-6 ?>-cm2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer. Also reported are the results of I-V and C-V barrier height measurements for Ni Schottky contacts to 6H-SiC. Current-voltage barrier heights as high as 1.2 eV have been measured, and the contacts show good electrical and physical stability following long-term anneals at 573 K in a vacuum ambient of 10-6 torr. These ohmic and Schottky contacts have been developed by the CCDS in collaboration with the Air Force and the Westinghouse Electric Corporation, and transfer of our contact technology to the Westinghouse Science and Technology is now complete.

  • MetalGaAs Interaction and Contact Degradation in Microwave MESFETs

    This work reports and critically reviews failure mechanisms induced by metal- GaAs interaction and contact degradation in low and medium power GaAs MESFETs in the framework of a comprehensive reliability evaluation test plan, performed mainly on commercially purchased devices manufactured by different technologies. The results show that, at least as regards contact degradation phenomena, these technologies have reached sufficient maturity, and significant reliability levels have been achieved even for the most severe applications and environments. Devices coming from some suppliers still suffer from reliability problems, such as ?>sinking?> of Au-based gate metallization into the active channel, Al electromigration, Al/GaAs interdiffusion enhanced by high contact current density, source and drain ohmic contact resistance increase, ohmic contacts electromigration, surface metal migration and short circuiting of closely spaced electrodes on GaAs with a non-suitable surface preparation and/or passivation. All these failure mechanisms have been identified by means of suitable microanalytical techniques, correlated with device electrical degradation and thoroughly discussed in this paper by comparison with results previously reported in the technical literature.