Contact resistance

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The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power


2012 IEEE 58th Holm Conference on Electrical Contacts (Holm 2012)

Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.


TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.



Periodicals related to Contact resistance

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.




Xplore Articles related to Contact resistance

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Quench behavior of the switching elements of a hybrid HTS current limiter

Granados, X.; Puig, T.; Teva, J.; Mendoza, E.; Obradors, X. Applied Superconductivity, IEEE Transactions on, 2001

In the hybrid HTS current limiter, current limitation is due to the transition to the normal resistive state of YBCO bars, which are shorting the secondary of a transformer. The HTS bars act as current driven switches allowing two states, a low impedance state in which the bar is in its superconducting state and a higher impedance state arisen after ...


Conductive borides used for junction formation and integration with contacts in deep 0.1 /spl mu/m MOSFETs

Zagozdzon-Wosik, W.; Ranjit, M.; Ravindranath, D.B.; Z.Zhang; Charlson, J.; Rusakova, I.; van der Heide, P.; Larson, L.; Bennett, J.; Tichy, R.; Beebe, M. Advanced Thermal Processing of Semiconductors, 2002. RTP 2002. 10th IEEE International Conference of, 2002

First Page of the Article ![](/xploreAssets/images/absImages/01039452.png)


Platinum silicide metallic source & drain process optimization for FDSOI pMOSFETs

Carron, V.; Nemouchi, F.; Morand, Y.; Poiroux, T.; Vinet, M.; Bernasconi, S.; Louveau, O.; Lafond, D.; Delaye, V.; Allain, F.; Minoret, S.; Vandroux, L.; Billon, T. SOI Conference, 2009 IEEE International, 2009

We report on the development of a metallic source and drain module for FDSOI pMOSFETs including lateral PtSi formation, Ti/TiN barrier, optimized doping conditions, controlled PtSi penetration below spacers and suitable cleaning of the PtSi surface prior to barrier deposition. Mean specific contact resistivity values lower than 2 Omega mum2 have been achieved, which leads to highly performant pMOSFET devices ...


Numerical Analyses of Electrical Contact Characteristics of YBCO Bulk With Silver Deposition

Jian Li; Mingzhe Rong; Yi Wu; Zhiqiang Sun Applied Superconductivity, IEEE Transactions on, 2007

In this paper, an axial symmetric model is constructed to investigate the electrical contact characteristics of YBCO bulk with silver deposited on the contact surface. In order to calculate the thermal-electromagnetic coupling characteristics near the contact spot, a series expression is derived to describe the quenching behavior of YBCO bulk based on the power law and Kim model and a ...


Calculation of Bipolar Transistor Base Resistance Using Finite Element Method

Vahrmann, Reinhold; Barke, E. Solid State Device Research Conference, 1989. ESSDERC '89. 19th European, 1989

To model NPN-transistor behaviour at high currents or high frequencies, an exact description of base resistance is needed. In this paper a new method for base resistance calculation is presented, that takes into account three- dimensional physical effects at high currents. A distributed equivalent circuit is generated for each NPN-transistor layout using the finite element method. Calculating the power dissipation ...


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