Contact resistance

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The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power


2012 IEEE 58th Holm Conference on Electrical Contacts (Holm 2012)

Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.


TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.



Periodicals related to Contact resistance

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.



Most published Xplore authors for Contact resistance

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Xplore Articles related to Contact resistance

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Strain engineering in nanoscale CMOS FinFETs and methods to optimize R<inf>S/D</inf>

Casey Smith; Srivatsan Parthasarathy; Brian E. Coss; Jason Williams; Hemant Adhikari; Greg Smith; Barry Sassman; Muhammad Mustafa Hussain; Prashant Majhi; Raj Jammy VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on, 2010

For the first time, we demonstrate stressor contact etch stop liner (sCESL) modulation of parasitics/external resistance in nonplanar devices. We report 17% saturation drive current enhancement in underlap doped cMOS FinFETs attributed to simultaneous lowering of RS/D via biaxial S/D stress and μo increase via effective uniaxial channel stress. Our observations imply that biaxial strain engineering for reduction of RS/D ...


A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo; Xingui Zhang; Hock-Chun Chin; Xiao Gong; Shao-Ming Koh; Chunlei Zhan; Guang-Li Luo; Chun-Yen Chang; Hau-Yu Lin; Chao-Hsin Chien; Zong-You Han; Shih-Chiang Huang; Chao-Ching Cheng; Chih-Hsin Ko; Clement H. Wann; Yee-Chia Yeo VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on, 2010

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form ...


Discussion on ``Some Notes on Track Bonding''

C. W. Ricker Transactions of the American Institute of Electrical Engineers, 1905

None


Contact resistance measurements of a MOSFET

H. L. Kwok IEE Proceedings G - Circuits, Devices and Systems, 1989

The author examines in detail a recent technique for measuring contact resistance of a MOSFET. It is observed that the equations used for determining the contact resistance based on the 'diode' mode and the 'MOSFET' mode differ by a constant factor depending on the device geometry in the limit when the sheet resistance dominates. Ideally, the ratio of the probe ...


Diagonal and vertical far-infrared transitions from quantum cascade emitters

S. S. Dhillon; A. G. Davies; D. D. Arnone; H. E. Beere; D. A. Ritchie; E. H. Linfield Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on, 2002

We report a study of a far-infrared GaAs-Al0.15Ga0.85As quantum cascade electro-luminescence device designed to emit via both diagonal and vertical transitions. Each type of transition was preferentially chosen by varying the applied electric field. The different transitions were identified by correlation with bandstructure calculations, electrical characteristics and the width of the peaks. Further, the importance of contact resistance on the ...


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Educational Resources on Contact resistance

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eLearning

Strain engineering in nanoscale CMOS FinFETs and methods to optimize R<inf>S/D</inf>

Casey Smith; Srivatsan Parthasarathy; Brian E. Coss; Jason Williams; Hemant Adhikari; Greg Smith; Barry Sassman; Muhammad Mustafa Hussain; Prashant Majhi; Raj Jammy VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on, 2010

For the first time, we demonstrate stressor contact etch stop liner (sCESL) modulation of parasitics/external resistance in nonplanar devices. We report 17% saturation drive current enhancement in underlap doped cMOS FinFETs attributed to simultaneous lowering of RS/D via biaxial S/D stress and μo increase via effective uniaxial channel stress. Our observations imply that biaxial strain engineering for reduction of RS/D ...


A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo; Xingui Zhang; Hock-Chun Chin; Xiao Gong; Shao-Ming Koh; Chunlei Zhan; Guang-Li Luo; Chun-Yen Chang; Hau-Yu Lin; Chao-Hsin Chien; Zong-You Han; Shih-Chiang Huang; Chao-Ching Cheng; Chih-Hsin Ko; Clement H. Wann; Yee-Chia Yeo VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on, 2010

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form ...


Discussion on ``Some Notes on Track Bonding''

C. W. Ricker Transactions of the American Institute of Electrical Engineers, 1905

None


Contact resistance measurements of a MOSFET

H. L. Kwok IEE Proceedings G - Circuits, Devices and Systems, 1989

The author examines in detail a recent technique for measuring contact resistance of a MOSFET. It is observed that the equations used for determining the contact resistance based on the 'diode' mode and the 'MOSFET' mode differ by a constant factor depending on the device geometry in the limit when the sheet resistance dominates. Ideally, the ratio of the probe ...


Diagonal and vertical far-infrared transitions from quantum cascade emitters

S. S. Dhillon; A. G. Davies; D. D. Arnone; H. E. Beere; D. A. Ritchie; E. H. Linfield Terahertz Electronics Proceedings, 2002. IEEE Tenth International Conference on, 2002

We report a study of a far-infrared GaAs-Al0.15Ga0.85As quantum cascade electro-luminescence device designed to emit via both diagonal and vertical transitions. Each type of transition was preferentially chosen by varying the applied electric field. The different transitions were identified by correlation with bandstructure calculations, electrical characteristics and the width of the peaks. Further, the importance of contact resistance on the ...


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IEEE-USA E-Books

  • High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues

    Refractory metals (Ti, Mo, Wand Ta) with precious metal overlayers (Au and Pt) were used to form ohmic contacts to polycrystalline boron doped chemically vapour deposited diamond films. Refractory metals afford high resistance to thermal and environmenal stresses. In addition, many refractory metals show a chemical affinity for carbon, resulting in the formation of a metal-carbide reaction layer with reduced Schottky barrier height at the contact interface. Low resistance ohmic contacts can be formed by heavy boron doping of the diamond film in the contact region. The viability and reliability of various refractory metal contact schemes were assessed to determine their upper operating temperatures and life expectancies in hostile environments. Reverse engineering of the contacts and detailed material analysis revealed likely failure mechanisms. It was found that Mo/Au gave the highest degree of thermal stability, while Ti gave the lowest contact resistance. The contact resistance was strongly dependent on the doping level of the diamond film

  • HighTemperature Ohmic and Schottky Contacts to NType 6HSiC Using Nickel

    We report specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 773 K and yielded values > 5 x 10-6 -cm2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer. Also reported are the results of I-V and C-V barrier height measurements for Ni Schottky contacts to 6H-SiC. Current-voltage barrier heights as high as 1.2 eV have been measured, and the contacts show good electrical and physical stability following long-term anneals at 573 K in a vacuum ambient of 10-6 torr. These ohmic and Schottky contacts have been developed by the CCDS in collaboration with the Air Force and the Westinghouse Electric Corporation, and transfer of our contact technology to the Westinghouse Science and Technology is now complete.

  • Contact Resistance and Schottky Barriers

    This chapter contains sections titled: Introduction Metal-Semiconductor Contacts Contact Resistance Measurement Techniques Schottky Barrier Height Comparison of Methods Strengths and Weaknesses Appendix 3.1 Effect of Parasitic Resistance Appendix 3.2 Alloys for Contacts to Semiconductors References Problems Review Questions

  • MetalGaAs Interaction and Contact Degradation in Microwave MESFETs

    This work reports and critically reviews failure mechanisms induced by metal- GaAs interaction and contact degradation in low and medium power GaAs MESFETs in the framework of a comprehensive reliability evaluation test plan, performed mainly on commercially purchased devices manufactured by different technologies. The results show that, at least as regards contact degradation phenomena, these technologies have reached sufficient maturity, and significant reliability levels have been achieved even for the most severe applications and environments. Devices coming from some suppliers still suffer from reliability problems, such as sinking of Au-based gate metallization into the active channel, Al electromigration, Al/GaAs interdiffusion enhanced by high contact current density, source and drain ohmic contact resistance increase, ohmic contacts electromigration, surface metal migration and short circuiting of closely spaced electrodes on GaAs with a non-suitable surface preparation and/or passivation. All these failure mechanisms have been identified by means of suitable microanalytical techniques, correlated with device electrical degradation and thoroughly discussed in this paper by comparison with results previously reported in the technical literature.



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