Contact resistance

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The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

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2018 Conference on Precision Electromagnetic Measurements (CPEM 2018)

CPEM is the most important scientific and technological conference in the domain of electromagnetic measurements at the highest accuracy levels. This conference covers the frequency range from DC to the optical region.2018 is expected to be a watershed year in the history of the international system of units (SI), with the adoption of the new definitions for the kilogram, the ampere, the kelvin and the mole. All the SI units will then be based on a set of seven defining constants. CPEM 2018 will provide a privileged opportunity to mark this milestone of the SI through a natural focus on quantum devices that relate electrical measurement standards to fundamental constants of physics. CPEM 2018 will also be the place to share knowledge on research in electromagnetic metrology focused on present and future challenges regarding industry and society in sectors such as Energy, ICT, quantum engineering, Industry 4.0, etc.


2018 SICE International Symposium on Control Systems (SICE ISCS)

Various aspects of control systems, from theory to application.


2017 12th European Microwave Integrated Circuits Conference (EuMIC)

The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of theiraspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2016 11th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC's, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2015 10th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS® Association and EuMA and is the premier European technical conference for RF microelectronics. Aim of the conference is to promote the discussion of recent developments and trends, and to encourage the exchange of scientific and technical information covering a broad range of high-frequency related topics, from materials and technologies to integrated circuits and applications, that will be addressed in all of their aspects: theory, simulation, design and measurement. If you are interested in anything about microwave and RF IC’s, the EuMIC conference is an exceptional venue to learn about the latest advances in the field and meet recognized experts from both Industry and Academia.

  • 2014 9th European Microwave Integrated Circuits Conference (EuMIC)

    The EuMIC conference is jointly organized by GAAS

  • 2013 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre -wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2012 European Microwave Integrated Circuit Conference (EuMIC)

    Microwave integrated circuits: modelling, simulation and characterisation of devices and circuits; technologies and devices; circuit design and applications.

  • 2011 European Microwave Integrated Circuit Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS/LTE, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physical and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2010 European Microwave Integrated Circuits Conference (EuMIC)

    EuMIC is the leading conference for MMICs/RFICs and their applications in Europe. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empirical behavioral modeling of microwave and optoelectronic active devices and design of monolithic ICs

  • 2009 European Microwave Integrated Circuits Conference (EuMIC)

    The 4th European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2008 European Microwave Integrated Circuits Conference (EuMIC)

    The third European Microwave Integrated Circut Conference, EuMIC, in Amsterdam, The Netherlands, is one of four conferences at the European Microwave Week 2008, the largest event in Europe dedicated to microwave electronics. EuMIC is the leading European conference for RFIC/MMIC technology and applications. The aim of the conference is to cover recent research and development on material technology, process development/technology.

  • 2007 European Microwave Integrated Circuits Conference (EuMIC)

    RF and microwave devices for telecommunication and sensor systems including UMTS, LMDS and other systems working in the microwave and millimetre-wave range. Covering recent development and trends in physical fundamentals, physicas and behavoural modeling, microwave and opto-electric devices and monolithic design in GaAs, InP, SiGe, GaN and SiC technologies.

  • 2006 European Microwave Integrated Circuits Conference (EuMIC) (Formerly GAAS)

  • GAAS 2005 - European Gallium Arsenide and Other Semiconductors Application Symposium


2017 16th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm)

ITherm 2017 is the leading international conference for scientific and engineering exploration of thermal, thermomechanicaland emerging technology issues associated with electronic devices, packages, and systems.


2017 17th International Workshop on Junction Technology (IWJT)

Junction Technology Doping Technology Silicide and Contact Technology


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Periodicals related to Contact resistance

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Applied Superconductivity, IEEE Transactions on

Contains articles on the applications and other relevant technology. Electronic applications include analog and digital circuits employing thin films and active devices such as Josephson junctions. Power applications include magnet design as well asmotors, generators, and power transmission


Biomedical Engineering, IEEE Transactions on

Broad coverage of concepts and methods of the physical and engineering sciences applied in biology and medicine, ranging from formalized mathematical theory through experimental science and technological development to practical clinical applications.


Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Display Technology, Journal of

This publication covers the theory, design, fabrication, manufacturing and application of information displays and aspects of display technology that emphasize the progress in device engineering, device design, materials, electronics, physics and reliabilityaspects of displays and the application of displays.


Electromagnetic Compatibility, IEEE Transactions on

EMC standards; measurement technology; undesired sources; cable/grounding; filters/shielding; equipment EMC; systems EMC; antennas and propagation; spectrum utilization; electromagnetic pulses; lightning; radiation hazards; and Walsh functions


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Most published Xplore authors for Contact resistance

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Xplore Articles related to Contact resistance

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Timewise increases in contact resistance due to surface roughness and corrosion

M. D. Bryant; M. Jin Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

To understand failure and estimate connector reliability a connector model was made in which two mated rough copper surfaces were subjected to ingression and corrosive attack by atmospheric oxygen. The rough surface segments the connector contact area into many small discrete areas (a-spots) through which currents flow. The initial a-spot contact radii ae (formed as metal-to-metal bridges by mating surface ...


Multispot model of contacts based on surface features

R. D. Malucci Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

A model to account for long-term degradation of stationary contacts is proposed. The model is based on introducing a third level of multispot constrictions on the surface of each asperity. The results of simulating fretting corrosion provided good agreement with existing test data. In the latter case it was found that variation of the basic parameter which represents film breakdown ...


TLP systems with combined 50 and 500-ohm impedance probes and kelvin probes

Evan Grund; Robert Gauthier 2003 Electrical Overstress/Electrostatic Discharge Symposium, 2003

TLP systems are mainly classified by their impedance, such as 50 ohm or 500 ohm current source. A new TLP configuration allows switching between 50 and 500 ohm by computer control to characterize a given part using both impedances. In addition, a four-needle Kelvin technique is introduced to TLP, which overcomes the measurement error from variations in contact resistance where ...


The characteristic research of contact insertion and separation force in connector

Liu Hong-Yang Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

The characteristics of insertion and separation force, as well as the influence of various geometric shapes, sizes, and frictional coefficients on insertion and separation force are studied. A series of mathematical models and some appropriate practical curves are presented. Experimental results show that the peak insertion force of contacts relates to the geometric shape and surface roughness of the guiding ...


Physical interpretations concerning nonlinear conductivity phenomena across no-load switching contacts

C. G. Karagiannopoulos; P. D. Bourkas; C. T. Dervos; C. A. Kagarakis Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

An experimental survey concerning physical interpretations of the dominant phenomena which may develop during the operation of no-load switching contacts in laboratory environments is presented. Measurements are performed on industrial switches with the following nominal values: isolation switches 400 V/100 A, isolation switches 20 kV/200 A, and fuse isolators 20 kV/ 100 A. It is shown that beyond a threshold ...


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Educational Resources on Contact resistance

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eLearning

Timewise increases in contact resistance due to surface roughness and corrosion

M. D. Bryant; M. Jin Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

To understand failure and estimate connector reliability a connector model was made in which two mated rough copper surfaces were subjected to ingression and corrosive attack by atmospheric oxygen. The rough surface segments the connector contact area into many small discrete areas (a-spots) through which currents flow. The initial a-spot contact radii ae (formed as metal-to-metal bridges by mating surface ...


Multispot model of contacts based on surface features

R. D. Malucci Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

A model to account for long-term degradation of stationary contacts is proposed. The model is based on introducing a third level of multispot constrictions on the surface of each asperity. The results of simulating fretting corrosion provided good agreement with existing test data. In the latter case it was found that variation of the basic parameter which represents film breakdown ...


TLP systems with combined 50 and 500-ohm impedance probes and kelvin probes

Evan Grund; Robert Gauthier 2003 Electrical Overstress/Electrostatic Discharge Symposium, 2003

TLP systems are mainly classified by their impedance, such as 50 ohm or 500 ohm current source. A new TLP configuration allows switching between 50 and 500 ohm by computer control to characterize a given part using both impedances. In addition, a four-needle Kelvin technique is introduced to TLP, which overcomes the measurement error from variations in contact resistance where ...


The characteristic research of contact insertion and separation force in connector

Liu Hong-Yang Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

The characteristics of insertion and separation force, as well as the influence of various geometric shapes, sizes, and frictional coefficients on insertion and separation force are studied. A series of mathematical models and some appropriate practical curves are presented. Experimental results show that the peak insertion force of contacts relates to the geometric shape and surface roughness of the guiding ...


Physical interpretations concerning nonlinear conductivity phenomena across no-load switching contacts

C. G. Karagiannopoulos; P. D. Bourkas; C. T. Dervos; C. A. Kagarakis Thirty-Sixth IEEE Conference on Electrical Contacts, and the Fifteenth International Conference on Electrical Contacts, 1990

An experimental survey concerning physical interpretations of the dominant phenomena which may develop during the operation of no-load switching contacts in laboratory environments is presented. Measurements are performed on industrial switches with the following nominal values: isolation switches 400 V/100 A, isolation switches 20 kV/200 A, and fuse isolators 20 kV/ 100 A. It is shown that beyond a threshold ...


More eLearning Resources

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IEEE-USA E-Books

  • Resistance Spot Welding:Fundamentals and Applications for the Automotive Industry

    The early chapters of this book provide thorough coverage of resistance spot welding fundamentals and principles. Topics covered include lobe and current range curves, contact resistance vs. electrode force, dynamic resistance, heat balance, nugget growth, etc. Equipment issues such as machine types, power supplies, and electrodes are addressed. Subsequent chapters focus on specific spot welding challenges to modern automotive manufacturing. Approaches to welding modern materials including advanced high strength steels, coated steels, and aluminum alloys are covered in much detail. The final chapters focus on many common production and quality control issues, such as electrode wear, monitoring and testing, computational modeling, and welding codes. The overall goal of the book is to provide a comprehensive resource for automotive engineers and technicians who work with modern spot welding equipment and automotive materials.

  • HighTemperature Ohmic and Schottky Contacts to NType 6HSiC Using Nickel

    We report specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 773 K and yielded values > 5 x 10-6 ?>-cm2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer. Also reported are the results of I-V and C-V barrier height measurements for Ni Schottky contacts to 6H-SiC. Current-voltage barrier heights as high as 1.2 eV have been measured, and the contacts show good electrical and physical stability following long-term anneals at 573 K in a vacuum ambient of 10-6 torr. These ohmic and Schottky contacts have been developed by the CCDS in collaboration with the Air Force and the Westinghouse Electric Corporation, and transfer of our contact technology to the Westinghouse Science and Technology is now complete.

  • Contact Resistance and Schottky Barriers

    This chapter contains sections titled: * Introduction * Metal-Semiconductor Contacts * Contact Resistance * Measurement Techniques * Schottky Barrier Height * Comparison of Methods * Strengths and Weaknesses * Appendix 3.1 Effect of Parasitic Resistance * Appendix 3.2 Alloys for Contacts to Semiconductors * References * Problems * Review Questions

  • MetalGaAs Interaction and Contact Degradation in Microwave MESFETs

    This work reports and critically reviews failure mechanisms induced by metal- GaAs interaction and contact degradation in low and medium power GaAs MESFETs in the framework of a comprehensive reliability evaluation test plan, performed mainly on commercially purchased devices manufactured by different technologies. The results show that, at least as regards contact degradation phenomena, these technologies have reached sufficient maturity, and significant reliability levels have been achieved even for the most severe applications and environments. Devices coming from some suppliers still suffer from reliability problems, such as ?>sinking?> of Au-based gate metallization into the active channel, Al electromigration, Al/GaAs interdiffusion enhanced by high contact current density, source and drain ohmic contact resistance increase, ohmic contacts electromigration, surface metal migration and short circuiting of closely spaced electrodes on GaAs with a non-suitable surface preparation and/or passivation. All these failure mechanisms have been identified by means of suitable microanalytical techniques, correlated with device electrical degradation and thoroughly discussed in this paper by comparison with results previously reported in the technical literature.

  • High Temperature Contacts to Chemically Vapour Deposited Diamond FilmsReliability Issues

    Refractory metals (Ti, Mo, Wand Ta) with precious metal overlayers (Au and Pt) were used to form ohmic contacts to polycrystalline boron doped chemically vapour deposited diamond films. Refractory metals afford high resistance to thermal and environmenal stresses. In addition, many refractory metals show a chemical affinity for carbon, resulting in the formation of a metal-carbide reaction layer with reduced Schottky barrier height at the contact interface. Low resistance ohmic contacts can be formed by heavy boron doping of the diamond film in the contact region. The viability and reliability of various refractory metal contact schemes were assessed to determine their upper operating temperatures and life expectancies in hostile environments. Reverse engineering of the contacts and detailed material analysis revealed likely failure mechanisms. It was found that Mo/Au gave the highest degree of thermal stability, while Ti gave the lowest contact resistance. The contact resistance was strongly dependent on the doping level of the diamond film



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