Contact resistance

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The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power


2012 IEEE 58th Holm Conference on Electrical Contacts (Holm 2012)

Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.


TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.



Periodicals related to Contact resistance

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.




Xplore Articles related to Contact resistance

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Design of Bulk Thermoelectric Modules for Integrated Circuit Thermal Management

Fukutani, K.; Shakouri, Ali Components and Packaging Technologies, IEEE Transactions on, 2006

Various parameters affecting the performance of bulk thermoelectric (TE) modules used for integrated circuit (IC) thermal management are studied. An effective circuit model is developed that takes into account various ideal and nonideal effects in the module. It is shown that there is an optimum module thickness and an optimum operating current which depend on the overall heat dissipation and ...


Characterisation of CMOS compatible vertical MOSFETs with new architectures through EKV parameter extraction and RF measurement

Tan, L.; Hakim, M.; Connor, S.; Bousquet, A.; Redman-White, W.; Ashburn, P.; Hall, S. Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on, 2009

Vertical MOSFETs (VMOSFETs) with channel lengths down to 100 nm and reduced overlap parasitic capacitance were fabricated using 0.35 mum lithography, with only one extra mask step compared to standard CMOS technology. EKV modelling produced reasonable fitting of the DC and AC characteristics for short channel devices. It is noted that achieving sufficiently long channels in vertical pillar devices is ...


Optimum geometrical dimensions of beam lead Schottky barrier mixer diode

Dong Zheng; Liangchen Wang; Puming Feng Millimeter Wave and Far-Infrared Technology, 1989. ICMWFT '89. International Conference on, 1989

The effects of the dimensions on the principal capacitance and resistance of the beam lead diode and optimum geometrical sizes of this kind of structure at 8mm band are presented.


Temperature-Time Effects on Film Growth and Contact Resistance of a Plated Copper-Tin-Zinc Alloy used as a Surface Finish on Electronic Components

Haque, C.A. Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, 1985

An electrodeposited copper-tin-zinc alloy having a nominal composition in the range by weight of 55-65 percent Cu, 20-30 percent Sn, and 10-20 percent Zn is commonly used as a surface finish on electronic components, particularly fuse end caps. The contact resistance of brass disks plated with this alloy (1µm thick) is 1-10 ![\Omega](/images/tex/1071.gif) due to a film of the oxides ...


A test structure for extraction of resistance matching properties

Larsen, F.; Ismail, M.; Iranmanesh, A. Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on, 1994

This paper describes a simple test structure for accurately determining the properties of any resistor structure for a given process. Experimental results are given for p-type diffused resistors in a p-well process, and n-type diffused and poly resistors in an n-well process in order to illustrate the extraction procedure and the level of accuracy achieved


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