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2015 IEEE International Conference on Plasma Sciences (ICOPS)
Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.
Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.
Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...
Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.
Electrical Engineering, 1931
Predetermination of the temperature in electrical machinery involves three distinct problems: (1) magnitude and distribution of the losses, (2) flow and cooling effect of the cooling medium in the machine, and (3) heat flow from source to cooling medium.
Katkhouda, K.; Martinez-Limia, A.; Bornschein, L.; Koseva, R.; Geppert, T.; Grohe, A.; Krokoszinski, H.-J.; Schaaf, P. Photovoltaics, IEEE Journal of, 2014
This paper presents the results of a detailed study on Al-based physical vapor deposition metallization for the rear side of nPERT silicon solar cells. Pure Al is compared with a barrier metallization (Al-Si/Al or Ti/Al) in terms of spiking, contact formation and back-side reflection. A degradation of cell performance with pure Al rear-side metallization due to Al spiking after thermal ...
Kosugi, T.; Ishii, H.; Arita, Y. VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on, 1995
We propose a new method to clean heavily-doped p/sup +/-Si surfaces by plasma hydrogenation prior to selective W CVD by using SiH/sub 4/ reduction. This cleaning technology reveals excellent characteristics: the improvement of W adhesion to p/sup +/-Si, low contact resistance, suppression of selectivity loss, and good controllability of Si consumption for p/sup +/- and n/sup +/-Si. Owing to this ...
Hyung-Seok Lee; Domeij, Martin; Zetterling, C.-M.; Ostling, M. Electron Devices, IEEE Transactions on, 2008
Bipolar junction transistors (BJTs) of 4H-SiC, with a low collector-emitter forward voltage drop VCE have been fabricated without base contact implantation. A comparison of BJTs on the same wafer with and without base contact implantation shows less than 10% higher VCE for the BJTs without base contact implantation. Omitting the base contact implantation eliminates high concentrations of implantation-induced defects that ...
Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Electron Devices, IEEE Transactions on, 1996
High performance InP-based InAlAs/InGaAs enhancement-mode HEMT's are demonstrated using two improved approaches to device structure design and fabrication, i.e., nonalloyed ohmic contacts and Pt-based buried-gate technologies, to reduce the source resistance (RS). With specially designed cap layer structures, nonalloyed ohmic contacts to the device channel were obtained providing contact resistance as low as 0.067 Ω*mm. Furthermore, in device fabrication, a ...
ICRA Plenary: Raffaello D'Andrea
IEEE Sections Congress 2014: Luc Van den Hove, Wearable Medical Technology
Mapping Human to Robot Motion with Functional Anthropomorphism for Teleoperation and Telemanipulation with Robot Arm Hand Systems
Virtual Reality Support for Teleoperation Using Online Grasp Planning
The Josephson Effect: The Original SQUIDs
The Josephson Effect: The Josephson Volt
APEC 2011- Methode Electronics at APEC 2011
Care Innovations: WEEE and RoHs(e-waste recycling and disposal)
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