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2015 IEEE International Conference on Plasma Sciences (ICOPS)
Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.
Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.
Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.
Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.
A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...
Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.
Koike, H.; Unno, Y.; Ishimaru, K.; Matsuoka, F.; Kakumu, M. Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International, 1994
An enlarged grain dual polycide gate and a dual buried contact technology using regrown amorphous-Si have been developed for high density full-CMOS SRAM cell. Lateral dopant diffusion has been suppressed to be less than 0.2 /spl mu/m, as a result, 0.4 /spl mu/m nMOS/pMOS spacing was realized using an 850/spl deg/C process. This technology can also achieve dual buried contact ...
Aziz, A.A.; Missous, M. High Performance Electron Devices for Microwave and Optoelectronic Applications Workshop, 1996. EDMO, 1996
We report in here about the first pseudomorphic InGaP/InGaAs/GaAs HEMT demonstrator using an all solid source MBE technique. The quality of thick InGaP is found comparable to state of the art InGaP material grown by other methods. When inserted as part of a pHEMT structure, we found a very large etch selectivity of GaAs over InGaP using H3 PO4:H2O2:H2O solution. ...
Ly, N.; Mayer, M.; Ramadhan, A.; Sanderson, J. Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on, 2014
An alternative wire joining method is explored that utilizes femtosecond laser pulses directed towards the contact point of two pieces of 25-μm diameter Au bonding wires typically used in microelectronic wire bonding. The two pieces are in the form of wire loops bonded onto four terminals in a crossing pattern. In-situ four-wire measurement is used to measure the contact resistance ...
Datta, S.; Pandey, R.; Agrawal, A.; Gupta, S.K.; Arghavani, R. VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014 Symposium on, 2014
We perform a comparative analysis of metal-Si and metal-insulator-Si (MIS) contacts and quantify the impact of the contact/via resistances on logic performance. Our results show that silicide contacts account for 32% degradation in the ON current of an nFinFET (ION) compared to ideal contact. MIS contacts which lead to lowering of Schottky barrier height provide 12% performance gain at iso-energy. ...
Verlangieri, P.A.; Kuznetsov, M.; Schneider, M.V. Microwave and Guided Wave Letters, IEEE, 1991
The fabrication of low-resistance ohmic contacts to n- and p-type compound semiconductor layers is reported. Each contact consists of a five-layer structure of evaporated metal that is alloyed at a critical temperature. Measurements of the alloyed contacts showed resistances in the 10/sup -7/- Omega -cm/sup 2/ range, which is lower than previously obtained results from conventional three-layer metallization systems produced ...
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