Contact resistance

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The term contact resistance refers to the contribution to the total resistance of a material which comes from the electrical leads and connections as opposed to the intrinsic resistance, which is an inherent property, independent of the measurement method. (Wikipedia.org)






Conferences related to Contact resistance

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2015 IEEE International Conference on Plasma Sciences (ICOPS)

Basic Processes in Fully and Partially Ionized Plasmas; Microwave Generation and Plasma Interactions; Charged Particle Beams and Sources; High Energy Density Plasmas and Applications; Industrial, Commercial, and Medical Plasma Applications; Plasma Diagnostics; Pulsed Power and other Plasma Applications.

  • 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS)

    Fully and partially ionized plasmas, microwave-plasma interaction, charged particle beams and sources; high energy density plasmas and applications, industrial and medical applications of plasmas; plasma diagnostics; pulsed power and other plasma applictions

  • 2011 IEEE 38th International Conference on Plasma Sciences (ICOPS)

    The ICOPS is the state of the art plasma science conference that covers all aspects of the general plasma science and its applications in various research fields.

  • 2010 IEEE 37th International Conference on Plasma Sciences (ICOPS)

  • 2009 IEEE 36th International Conference on Plasma Sciences (ICOPS)

    The conference features an exciting technical program with reports from around the globe about new and innovative developments in the field of pulsed power, plasma science and engineering. Leading researchers gather to explore pulsed power plasmas, basic plasma physics, high-energy-density-plasmas, inertial confinement fusion, magnetic fusion, plasma diagnostics, microwave generation, lighting, micro and nano applications of plasmas, medical applications and plasma processing.

  • 2008 IEEE 35th International Conference on Plasma Sciences (ICOPS)

    The 35th IEEE International Conference on Plasma Science will feature an exciting technical program with reports from around the globe about new and innovative developments in the field of plasma science and engineering: 1. Basic processes in fully and partially ionized plasmas 2. Microwave generation and plasma interactions 3. Charged particle beams and sources 4. High energy density plasmas applications 5. Industrial, commercial and medical plasma applications 6. Plasma diagnostics 7. Pulsed power


2012 IEEE 58th Holm Conference on Electrical Contacts (Holm 2012)

Practicing designers, engineers, physicists and research scientists - those new to the field and those experienced. The 2011 Conference will include excellent papers authored by some of the outstanding technical people in this field. The international contributors come from universities and industries in USA, Austria, Canada, Japan, China, France, Switzerland, Russia, Germany, United Kingdom and other countries. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer. Additionally, the joint conference will make it possible for any attendee to discuss with other international authors, on work presented by the author at the conference or any subject related to the authors field of expertise.


TRANSDUCERS 2011 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference

Latest progress in physical, chemical and biological microsensors; Latest development in optical, RF, fluidic, biomedical and power MEMS; Most advanced technologies in micro/nano fabrication, packaging and design.



Periodicals related to Contact resistance

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Components and Packaging Technologies, IEEE Transactions on

Component parts, hybrid microelectronics, materials, packaging techniques, and manufacturing technology.


Microelectromechanical Systems, Journal of

A journal covering Microsensing, Microactuation, Micromechanics, Microdynamics, and Microelectromechanical Systems (MEMS). Contains articles on devices with dimensions that typically range from macrometers to millimeters, microfabrication techniques, microphenomena; microbearings, and microsystems; theoretical, computational, modeling and control results; new materials and designs; tribology; microtelemanipulation; and applications to biomedical engineering, optics, fluidics, etc. The Journal is jointly sponsored by the IEEE Electron Devices ...


Semiconductor Manufacturing, IEEE Transactions on

Addresses innovations of interest to the integrated circuit manufacturing researcher and professional. Includes advanced process control, equipment modeling and control, yield analysis and optimization, defect control, and manufacturability improvement. It also addresses factory modelling and simulation, production planning and scheduling, as well as environmental issues in semiconductor manufacturing.




Xplore Articles related to Contact resistance

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The calculation of generator heat losses

Electrical Engineering, 1931

Predetermination of the temperature in electrical machinery involves three distinct problems: (1) magnitude and distribution of the losses, (2) flow and cooling effect of the cooling medium in the machine, and (3) heat flow from source to cooling medium.


Aluminum-Based Rear-Side PVD Metallization for nPERT Silicon Solar Cells

Katkhouda, K.; Martinez-Limia, A.; Bornschein, L.; Koseva, R.; Geppert, T.; Grohe, A.; Krokoszinski, H.-J.; Schaaf, P. Photovoltaics, IEEE Journal of, 2014

This paper presents the results of a detailed study on Al-based physical vapor deposition metallization for the rear side of nPERT silicon solar cells. Pure Al is compared with a barrier metallization (Al-Si/Al or Ti/Al) in terms of spiking, contact formation and back-side reflection. A degradation of cell performance with pure Al rear-side metallization due to Al spiking after thermal ...


Novel Si surface cleaning technology with plasma hydrogenation and its application to selective CVD-W clad layer formation

Kosugi, T.; Ishii, H.; Arita, Y. VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on, 1995

We propose a new method to clean heavily-doped p/sup +/-Si surfaces by plasma hydrogenation prior to selective W CVD by using SiH/sub 4/ reduction. This cleaning technology reveals excellent characteristics: the improvement of W adhesion to p/sup +/-Si, low contact resistance, suppression of selectivity loss, and good controllability of Si consumption for p/sup +/- and n/sup +/-Si. Owing to this ...


Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation

Hyung-Seok Lee; Domeij, Martin; Zetterling, C.-M.; Ostling, M. Electron Devices, IEEE Transactions on, 2008

Bipolar junction transistors (BJTs) of 4H-SiC, with a low collector-emitter forward voltage drop VCE have been fabricated without base contact implantation. A comparison of BJTs on the same wafer with and without base contact implantation shows less than 10% higher VCE for the BJTs without base contact implantation. Omitting the base contact implantation eliminates high concentrations of implantation-induced defects that ...


High-performance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies

Chen, K.J.; Enoki, T.; Maezawa, K.; Arai, Kunihiro; Yamamoto, M. Electron Devices, IEEE Transactions on, 1996

High performance InP-based InAlAs/InGaAs enhancement-mode HEMT's are demonstrated using two improved approaches to device structure design and fabrication, i.e., nonalloyed ohmic contacts and Pt-based buried-gate technologies, to reduce the source resistance (RS). With specially designed cap layer structures, nonalloyed ohmic contacts to the device channel were obtained providing contact resistance as low as 0.067 Ω*mm. Furthermore, in device fabrication, a ...


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